CN104412366A - Method for producing annealing processed body, laser annealed base, and laser annealing processing device - Google Patents
Method for producing annealing processed body, laser annealed base, and laser annealing processing device Download PDFInfo
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- CN104412366A CN104412366A CN201480001793.7A CN201480001793A CN104412366A CN 104412366 A CN104412366 A CN 104412366A CN 201480001793 A CN201480001793 A CN 201480001793A CN 104412366 A CN104412366 A CN 104412366A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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Abstract
The present invention is provided with a plurality of support sections (4) that, at a plurality of locations at the bottom surface side of a body that is to be processed, support the body that is to be processed, which is irradiated from the top side by laser light while the laser light is scanned in a relative manner; the plurality of support sections (4) are configured in a manner so as to be capable of an operation switching between each individually supporting or cancelling the supporting when the line beam laser light (150) is radiating while scanning in a relative manner; the support of the partial region (111) of the body that is to be processed containing the region (110) of laser light irradiation is successively cancelled alongside the relative scanning of the line beam laser light (150); the irradiation by the line beam laser light (150) is completed alongside the motion of the region (110) of irradiation; and the partial region (112) at which the support has been cancelled is successively re-supported, thereby enabling uniform annealing processing without an effect from pushpins, suction grooves, or the like provided to the reverse surface side of the body that is to be processed during laser annealing processing.
Description
Technical field
The present invention relates to and utilize laser to carry out irradiating and implement the manufacture method of the annealing handled object of annealing in process, support the laser annealing base station of described handled object and handled object carried out to the laser anneal device of laser annealing process.
Background technology
When the polycrystalline of the thin-film transistor used in the pixel switch manufacturing liquid crystal display or organic EL (Electro-Luminescence: electroluminescence) display or drive circuit or single crystal semiconductor films etc., utilize the laser anneal device of laser practical (such as with reference to patent documentation 1).
In this laser anneal device, the untreated semiconductor substrate placing such as will carrying out annealing in process on mounting table and mobile mounting table, divides the irradiation starting point being positioned at semiconductor substrate to make laser irradiating part.Afterwards, to the surface irradiation laser of semiconductor substrate and mobile mounting table, thus laser is scanned.Thus, semiconductor substrate crystallization.
In addition, in known laser annealing device, there is following structure: namely, for the semiconductor substrate transported by mechanical arm etc., it is made to be received by level from the mode of the tops such as the outstanding pusher pin (pusherpin) of mobile mounting table upper surface to be supported on, afterwards, apply imbed action and carry out laser irradiation to pusher pin, outstanding the carrying out of pusher pin is made to take out of (with reference to patent documentation 2) after process terminates, or there is following mechanism: namely, at mounting table upper surface semiconductor substrate adsorbed and be fixed (with reference to patent documentation 3).
Prior art document
Patent documentation
Patent documentation 1: Japanese Patent Laid-Open 10-135149 publication
Patent documentation 2: Japanese Patent Laid-Open 2005-019914 publication
Patent documentation 3: Japanese Patent Laid-Open 2007-331031 publication
Summary of the invention
Invent technical problem to be solved
As described above in existing laser anneal device, when carrying out laser annealing process to semiconductor substrate irradiating laser, semiconductor substrate placing is processed non-irradiated thing on test portion platform.And on mounting table, be manufactured with for as described above by the hole of the pusher pin used during substrate carrying-in/carrying-out or the groove etc. being used for adsorbing semiconductor substrate.
If relatively to be positioned at this hole or groove top semiconductor substrate region irradiating laser situation and to the situation of semiconductor substrate region irradiating laser of top not being positioned at hole or groove, then irradiate result and change, produce and irradiate uneven such problem.Its reason is, in the situation to the semiconductor substrate irradiating laser be positioned at above hole or groove with to the semiconductor substrate irradiating laser be not positioned at above hole or groove, thermal effect is different with light reflecting effect.
The present invention completes for solving above-mentioned the problems of the prior art, its object is to provide a kind of method and apparatus, in the method and device, handled object is supported by multiple position, when carrying out laser and irradiating, remove supporting partly, thus can prevent the irradiation result of laser from changing partly.
The technical scheme that technical solution problem adopts
That is, in the manufacture method of the annealing handled object of a first aspect of the present invention, relative to handled object scanning and irradiating laser to carry out the annealing of described handled object,
It is characterized in that, described handled object is supported by multiple position, along with the relative scanning of described laser, remove the supporting of the regional area of the described handled object to the irradiation area comprising described laser successively, and along with the movement of described irradiation area, the irradiation of described laser terminates, successively again supporting relieve described supporting regional area.
A second aspect of the present invention is the manufacture method of the annealing handled object of a first aspect of the present invention, it is characterized in that, when removing described supporting, the service portion supported described in described regional area departs from described handled object.
A third aspect of the present invention is the manufacture method of the annealing handled object of a first aspect of the present invention or second aspect, it is characterized in that, described handled object is non-single crystal semiconductor substrate.
A fourth aspect of the present invention is the manufacture method of the annealing handled object of a third aspect of the present invention, it is characterized in that, described non-single crystal semiconductor substrate is non-monocrystalline silicon substrate.
A fifth aspect of the present invention is the manufacture method of a first aspect of the present invention to any one the annealing handled object in fourth aspect, and it is characterized in that, described laser is pulse laser, and the beam profile shape of described scanning direction has the par of even intensity.
A sixth aspect of the present invention is the manufacture method of a first aspect of the present invention to any one the annealing handled object in the 5th aspect, it is characterized in that, when irradiating described laser, described irradiation area scanning direction front side relieve in the described regional area of described supporting, detect the position of the described handled object on the direction of illumination of described laser, based on the result of this detection, adjust the irradiation position relative to the described laser on the direction of illumination of the described laser of detection position.
The feature of the laser annealing base station of a seventh aspect of the present invention is, comprise multiple support, the plurality of support supports described handled object at multiple positions of the lower face side of handled object, and described handled object carries out relative scanning by laser and irradiated by from upper surface side.
A eighth aspect of the present invention is the laser annealing base station of a seventh aspect of the present invention, it is characterized in that, described support has can at the movable part of above-below direction movement, and when supporting described handled object, described movable part rises, when removing the supporting of described handled object, described movable part declines.
A ninth aspect of the present invention is the laser annealing base station of a seventh aspect of the present invention or the 8th invention, it is characterized in that, described support has suction unit in upper end, described handled object is adsorbed by the attraction of described suction unit when supporting described handled object, when removing the supporting relative to described handled object, stop attracting the attraction of described suction unit.
A tenth aspect of the present invention is that a seventh aspect of the present invention is to any one the laser annealing base station in the 9th aspect, it is characterized in that, comprise control part, the switching action of this control part to described support controls, this control part, according to the irradiation position of the described laser on the direction, face of described handled object, controls carry out the described supporting of described support and remove the switching action of described supporting.
A tenth aspect of the present invention is the laser annealing base station of a ninth aspect of the present invention, it is characterized in that, described control part carries out following switching controls: namely, relative scanner uni according to described laser irradiates, remove the supporting to the described support that the regional area of the described semiconductor substrate comprising the irradiation area that described laser irradiates supports successively, and utilize described support to support regional area that the irradiation comprising the irradiation completing described laser completes region, that relieve described supporting successively.
The feature of the laser annealing processing unit of a twelveth aspect of the present invention is, comprising: described a seventh aspect of the present invention is to any one the laser annealing base station in the 9th aspect;
LASER Light Source, this LASER Light Source Output of laser;
Optical system, this optical system derives described laser, and described laser is irradiated to the handled object supported by described annealing base station; And
Scanning means, this scanning means scans described laser relative to described handled object.
A thirteenth aspect of the present invention is the laser annealing processing unit of a twelveth aspect of the present invention, it is characterized in that, comprises control part, and the switching action of this control part to the scanning motion of described scanning means and described support controls.
A fourteenth aspect of the present invention is the laser annealing processing unit of a thirteenth aspect of the present invention, it is characterized in that, comprise: position detection part, when irradiating described laser, this position detection part in the front, scanning direction of the irradiation area of handled object, the position of the handled object on detection laser direction of illumination; And irradiation position adjustment part, this irradiation position adjustment part adjusts the irradiation position of described laser on laser direction of illumination,
Described control part receives the testing result of described position detection part, according to this testing result, is adjusted by the described irradiation position of described irradiation position adjustment part to the described laser being irradiated to described detection position.
A fifteenth aspect of the present invention is the laser annealing processing unit of a fourteenth aspect of the present invention, it is characterized in that, described irradiation position adjustment part has in described optical system the mechanism that the focal position of described laser adjusts.
Invention effect
As described above, according to the present invention, when to handled object irradiating laser, irradiating laser under the state that the regional area of the described handled object comprising laser-irradiated domain is supported can relieved, therefore the impact by the caused different thermal effects such as the structure for supporting handled object or light reflecting effect can be got rid of, thus uniform annealing in process can be carried out to handled object.
Accompanying drawing explanation
Fig. 1 shows the annealing base station of an embodiment of the invention and comprises the concise and to the point figure of laser machining device of an execution mode of this annealing base station.
Fig. 2 shows the vertical view of the annealing base station of the annealing base station comprising support of same execution mode and the support after comprising change.
Fig. 3 is the figure of the beam profile shape of the scanning direction along laser that same execution mode is shown.
The figure of the action of support when Fig. 4 is the irradiating laser that same execution mode is described.
Fig. 5 (a) shows the vertical view of the annealing base station of another embodiment of the present invention, and Fig. 5 (b) is the figure that support is described.
Fig. 6 (a) is the plane graph of the annealing base station that other another execution modes of the present invention are shown, Fig. 6 (b), (c) are the figure that support is described.
Fig. 7 shows the concise and to the point figure of the laser anneal device of another embodiment of the present invention.
Fig. 8 shows the flow chart of the treatment step of same execution mode.
Embodiment
Below, based on Fig. 1, the annealing base station of an embodiment of the invention and the laser machining device comprising this annealing base station are described.
Laser machining device 1 comprises process chamber 2, is provided with scanning means 3 in process chamber 2.Scanning means 3 has the scanning direction moving part 30 that can carry out movement in X-direction (scanning direction), and this scanning direction moving part 30 is provided with the support 4 with scanning direction moving part 30 together movement.
Scanning direction moving part 30 can be extended in X direction on the basal disc at process chamber 2 guiding piece 31 move, driven by not shown motor etc., support 4 can be made to move in a scanning direction.
Comprise the scanning means 3 of above-mentioned scanning direction moving part 30 and guiding piece 31, support 4 forms annealing base station of the present invention.
In addition, in process chamber 2, be provided with the importing window 6 imported by Line beam from outside.
When laser treatment, be provided with the semiconductor substrate 100 forming amorphous silicon film 100b etc. on glass substrate 100a etc. in the central authorities of scanning direction moving part 30.Semiconductor substrate 100 is equivalent to handled object.
In addition, for the processing unit of present embodiment, the laser annealing process relating to amorphous film crystallization by laser treatment is illustrated, but laser treatment content of the present invention is not limited to this, such as, also can carry out single crystallization to the semiconductor film of on-monocrystalline, or upgrading is carried out to crystalline semiconductor film.In addition, the process relating to other also can, handled object is not restricted to individually defined thing.
LASER Light Source 10 is had in the outer setting of process chamber 2.As long as LASER Light Source 10 can export any one laser in pulsed oscillation laser, continuous oscillation laser, the present invention is not limited to a certain.But the present invention is more suitable for the pulsed oscillation laser adopting energy density higher.
For the laser 15 of the pulse type exported in this LASER Light Source 10, adjust energy density by attenuator 11 as required, carry out shaping or deflection etc. to obtain to Line beam shape etc. by the optical system 12 comprising speculum 12a, light collecting lens 12b, speculum 12c etc.In addition, the optics forming optical system 12 is not limited to foregoing, can comprise various lens, speculum, guided wave portion etc.
In addition, in present embodiment, with the beam in cross section shape of laser 15 for Line beam shape is illustrated, but the present invention is not limited thereto, and also can be set to point-like, circular, the shape that rectangle etc. are suitable.
In addition, laser machining device 1 comprises control part 7, this control part 7 gated sweep device 3, support 4 and LASER Light Source 10.Control part 7 by CPU, make it carry out the program of action, the formations such as memory portion.
Then, based on Fig. 2, the details of support 4 is described.
As shown in Fig. 2 (a), support 4 has following structure: namely, and spaced at intervals on scanning direction the moving part 30 and stationary magazine creel 41 arranged in length and breadth is provided with liftable fulcrum post 40, and each fulcrum post 40 can be elevated independently of each other.Fulcrum post 40 is equivalent to movable part.In addition, the top of fulcrum post 40 is equivalent to service portion.
The lifting of each fulcrum post 40 is performed by not shown drive unit, and this lifting is controlled by control part 7.In control part 7, can synchronously carry out the lifting of each fulcrum post 40 with the irradiation position of laser 15.In addition, described drive unit can be arranged at such as scanning direction moving part 30 etc.
Then, the action of laser machining device 1 is described.
In pulsed oscillation laser light source 10, carry out impulse hunting by the control of control part 7 with the repetition rate of regulation, to specify to export, laser 15 is exported.For laser 15, citing shows the laser of such as below wavelength 400nm, pulsewidth half amplitude 200n second below.But the present invention is not limited thereto.
The attenuator 11 that the pulse energy density of laser 15 is controlled by control part 7 adjusts.Attenuator 11 sets the attenuation rate of regulation, and adjusts attenuation rate, to obtain the optimal radiation pulses energy density of carrying out crystallization on the shadow surface of silicon fiml 100b.Such as make, in the situations such as amorphous silicon film 100b crystallization, the energy density on this shadow surface to be adjusted to 250 ~ 500mJ/cm
2.
Laser 15 through attenuator 11 can be shaped as Line beam shape by optical system 12 and make short axis width optically focused, is imported into the importing window 6 being arranged on process chamber 2 afterwards as Line beam laser 150.
The length that Line beam is such as shaped as major axis side is 370 ~ 1300mm, and the length of minor axis side is 100 μm ~ 500 μm.
As shown in Figure 3, Line beam laser 150 has: par 151, and this par 151 is more than 96% of ceiling capacity intensity; And rake 152, this rake 152 is positioned at the both ends of long axis direction, and have the energy intensity being less than described par 151, energy intensity declines gradually towards outside.Rake is the region in the scope of 10% ~ 90% of maximum intensity.
The scanning means 3 controlled by control part 7 makes silicon fiml 100b move with the sweep speed of regulation, also carries out illuminated line beam laser 150 to semiconductor substrate 100 relative to semiconductor substrate 100 scan line beam laser 150 simultaneously.At this moment sweep speed is such as in the scope of 1 ~ 100mm/ second.But described sweep speed of the present invention is not defined as particular value.
Sweep span is not defined as specific numerical value yet, but such as can list the scope of 5 ~ 15 μm.
Then, the action of the support 4 during the described Line beam laser 150 of irradiation is described.
As described above, when carrying out laser treatment, moved by scanning means 3 scanning direction moving part 30, thus semiconductor substrate 100 moves, consequently, Line beam laser 150 scans relative to semiconductor substrate 100.At this moment, according to the irradiation position of Line beam laser 150, control the lifting of fulcrum post 40 in support 4.Specifically, the supporting of the fulcrum post 40 corresponding to regional area 111 of the semiconductor substrate 100 comprising the irradiation area 110 irradiated by Line beam laser 150 is removed.In addition, in this execution mode, contrast ray beam laser is illustrated, and the beam shape as the laser being irradiated to handled object in the present invention is not defined as Line beam, such as, also can be the laser etc. on point.But the Line beam laser of the wider area of disposable irradiation makes effect of the present invention become more remarkable.
In state shown in Fig. 4, in the P1 ~ P12 as fulcrum post 40, the fulcrum post 40 of the P6 corresponding with regional area 111 declines and the supporting of semiconductor substrate 100 is removed, and departs from downwards from the lower surface of semiconductor substrate 100.Other fulcrum post carries semiconductor substrate 100.Thus, under the state of being irradiated by Line beam laser 150, the impact produced by the supporting of support 4 in regional area 111 is excluded.In addition, for the scope of regional area 111, can suitably set it to following scope, that is, support the scope that may have an impact when illuminated line beam laser 150.Regional area 111 can be defined as irradiation area.
In the relative scanning of Line beam laser 150, if scanning direction moving part 30 moves, then Line beam laser 150 is relative to the irradiation position relative movement of semiconductor substrate 100, and irradiation area 110 and regional area 111 also move relative to semiconductor substrate 100 thus.If regional area 111 moves to the P7 of adjacent fulcrum post 40, the fulcrum post 40 of P7 is then made to decline, complete on the region of irradiation away from regional area 111, making the front support that corresponds to be increased by the fulcrum post 40 of the P6 of regional area 112 removed, re-start the supporting of semiconductor substrate 100.Repeat the scanning of described Line beam laser 150 and the lifting successively of fulcrum post 40, thus can make when illuminated line beam laser 150, the supporting of support 4 can not have an impact to annealing.
In addition, as described above, because Line beam laser 150 is shaped as linear light pencil, thus synchronization lifting is along each fulcrum post 40 intersected on direction with scanning direction.In addition, except synchronization lifting is except each fulcrum post 40 on the direction intersected with scanning direction, connecting member etc. also can be utilized to carry out link and be elevated simultaneously.
In addition, in the above-described embodiment, as shown in Fig. 2 (a), be arranged as example with fulcrum post 40 transverse and longitudinal to be illustrated, but also can such as shown in Fig. 2 (b) like that, close with the beam profile matching form of the laser 15 of pulse type, the stationary magazine creel 43 being disposed with longer dimension on multiple direction intersecting along the scanning direction with Line beam spaced apart, arranges the supporting slice 42 of the longer dimension that can be elevated to stationary magazine creel 43 in a scanning direction.Stationary magazine creel 43 and supporting slice 42 form support, and supporting slice 42 forms movable part.The top of supporting slice 42 forms operating member.
Semiconductor substrate 100 is supported by supporting slice 42.This supporting slice 42 can be elevated along the direction intersected with scanning direction, can remove the supporting of support, re-start supporting afterwards without the need to the mechanism of complexity along with the scanning of the Line beam laser 150 of Line beam shape.
The above-mentioned support with movable part can move, and to make the mechanical arm for moving into and take out of handled object pass through, does not need the pusher pin in the past used, and in addition, reduces the rise and fall time of pusher pin, thus can improve productivity.
In the respective embodiments described above, utilize support press semiconductor substrate and support, but support also can be utilized to adsorb semiconductor substrate and support.
The annealing base station of present embodiment is shown in Fig. 5 (a), in Fig. 5 (b), has enlargedly show the supporting absorbing cylinder 50 that annealing base station is arranged.
In annealing base station, scanning direction moving part 30 has the supporting absorbing cylinder 50 that transverse and longitudinal is at predetermined intervals arranged.Supporting absorbing cylinder 50 forms support of the present invention.The adsorption hole 50a be made up of bore of supporting absorbing cylinder 50 is connected with and attracts line 51 and open file 53, attract line 51 to be connected with suction pump 52, open file 53 is connected with relief valve 54.In each supporting absorbing cylinder 50, bearing semiconductor substrate 100 is carried out at the back side of the semiconductor substrate 100 utilizing the action of suction pump 52 to be produced in the adsorption hole 50a of supporting absorbing cylinder 50 above subatmospheric negative pressure, absorption supporting absorbing cylinder 50 by attraction line 51.At this moment relief valve 54 is closed.The formation adsorption section, top of supporting absorbing cylinder 50.
On the other hand, when removing absorption, stop the action of sorption pump 52, and open relief valve 54, thus air flows into adsorption hole 50a by relief valve 54, open file 53, the absorption of supporting absorbing cylinder 50 pairs of semiconductor substrates 100 is removed.
The absorption carried out in supporting absorbing cylinder 50 and releasing absorption carry out switching according to the irradiation of Line beam laser 150, thus identical with the respective embodiments described above, the irradiation area of the online beam laser 150 of energy and its periphery are not subject to the annealing in process of the supporting impact of supporting absorbing cylinder 50.
Specifically, remove and comprise the absorption of irradiating the supporting absorbing cylinder 50 having the regional area of the semiconductor substrate 100 of the irradiation area of laser corresponding.In addition, for the scope of regional area, can suitably be set as supporting the scope that may have an impact when illuminated line beam laser 150.
If scanning direction moving part 30 is moved in the relative scanning of online beam laser 150, then Line beam laser 150 relatively moves relative to the irradiation position of semiconductor substrate 100, irradiation area and regional area also move relative to semiconductor substrate 100 thus, if therefore regional area moves to adjacent supporting absorbing cylinder 50, then remove the absorption of this supporting absorbing cylinder 50, away from regional area, just then restarted to adsorb by the supporting absorbing cylinder 50 relieving absorption, and carry out the supporting of semiconductor substrate 100.By repeating the scanning of described Line beam laser 150, the absorption successively of supporting absorbing cylinder 50 and removing absorption, thus when illuminated line beam laser 150, the supporting of support 50 can be made to anneal and to have an impact.
In addition, as described above, because Line beam laser 150 is shaped as linear light pencil, thus synchronously carry out adsorbing and removing adsorbing along each supporting absorbing cylinder 50 on the direction intersected with scanning direction.In addition, for along the supporting absorbing cylinder 50 on the direction intersected with scanning direction, except mutually synchronously carrying out adsorbing and removes except absorption, also can with attract line or open file be connected synchronously to carry out adsorbing or removing adsorbing.
In addition, in above-mentioned execution mode, be arranged as example be illustrated to support absorbing cylinder 50 transverse and longitudinal, but also can be as shown in Figure 6, according to the beam profile shape of Line beam laser 150, on scanning direction is arranged multiple direction intersecting along the scanning direction with Line beam with separating predetermined distance longer dimension supporting Attraction block 60.
The supporting length of Attraction block 60 and the scanning direction of scanning direction moving part 30 crisscross on width roughly the same, the upper surface of supporting Attraction block 60 has the adsorption tank 60a along the long side direction supporting Attraction block 60.The length of adsorption tank 60a arrives near the two ends on the long side direction of supporting Attraction block 60, but does not arrive the two ends on long side direction.
The adsorption tank 60a of supporting Attraction block 60 is connected with open file 63 with attraction line 61, and attract line 61 to be connected with suction pump 62, open file 63 is connected with relief valve 64.In each supporting Attraction block 60, utilizing the action of suction pump 62 in the adsorption tank 60a of supporting absorbing cylinder 60, to produce subatmospheric negative pressure by attracting line 61, carrying out bearing semiconductor substrate 100 with the back side of adsorbing the semiconductor substrate 100 above supporting Attraction block 60.Now, relief valve 64 is closed.The formation suction unit, top of supporting Attraction block 60.
On the other hand, when removing absorption, stopping the action of sorption pump 62, and opening relief valve 64, thus air is by relief valve 64, open file 63 and flow into adsorption hole 60a, makes the absorption removing supporting Attraction block 60 pairs of semiconductor substrates 100.
Correspondingly switch the absorption of supporting Attraction block 60 according to the irradiation position of Line beam laser 150 and remove absorption, thus identical with the respective embodiments described above, the irradiation area of the online beam laser 150 of energy and its periphery are not subject to the annealing in process of the supporting impact of supporting absorbing cylinder 50.
Specifically, remove and comprise the absorption of irradiating the supporting absorbing cylinder 50 having the regional area of the semiconductor substrate 100 of the irradiation area of laser corresponding.In addition, for the scope of regional area, can suitably be set as supporting the scope that may have an impact when illuminated line beam laser 150.
In described supporting absorbing cylinder 50, supporting Attraction block 60, describe and utilize absorption and remove the situation that absorption carries out supporting and removing supporting, in order to more a step reduces these member of formation to sharp light-struck impact, also can make be elevated supporting absorbing cylinder 50, supporting Attraction block 60 along with absorption and releasing absorption.That is, these components can be made when adsorbing to rise to contact with the rear side of semiconductor substrate, or making it have minimum gap, make when removing absorption the decline of these components and and the rear side of semiconductor substrate there is enough intervals.
In addition, carry out in lifting process at support relative to handled object, the apparent height of handled object when wishing that support is elevated, can not be caused to change.
In addition, for the interval of described fulcrum post, supporting slice, supporting absorbing cylinder, supporting Attraction block etc., preferably when the supporting of any one parts is removed, semiconductor substrate local buckling and the amount of bow that produces are in prescribed limit.The prescribed limit of amount of bow can suitably set, such as, set based on not producing the viewpoint of obstacle in annealing in process, or carries out based on the adjustment by optical system etc. the viewpoint tackled and set.Below, the structure adjusting the irradiation position on the direction of illumination of laser such as bending according to semiconductor substrate is described.
Laser machining device 1a as shown in Figure 7 comprises process chamber 2, scanning means 3, scanning direction moving part 30, support 4, imports window 6 in the same manner as described laser machining device 1, comprises LASER Light Source 10, optical system 12 and control part 7 in the outside of process chamber 2.These structures are identical with laser machining device 1, omit detailed description here.
The position of the scanning direction front side of the online beam laser 150 of laser machining device 1a has the height finder 8 of the distance between mensuration and semiconductor substrate 100 surface.Height finder 8 is fixed on fixed position, measures the apparent height of the semiconductor substrate 100 of the movement along with scanning continuously or discontinuously.Height finder 8 is equivalent to position detection part.In addition, carry out in the structure of movement at the laser being irradiated to handled object, preferably make height finder move similarly.
Be configured to the output of height finder 8 to be sent to control part 7, in control part 7, can measurement result be received and calculate the height of semiconductor substrate 100.In addition, in optical system 12, utilize not shown drive unit that light collecting lens 12b is moved along optical axis direction, this drive unit is controlled by control part 7.That is, can utilize based on measurement result the irradiation position irradiating with the corresponding laser that locates to adjust on direction of illumination.The adjustment of irradiation position is carried out to make focal position be positioned at assigned position relative to the surface of semiconductor substrate 100 by adjustment light collecting lens 12b position in the direction of the optical axis.The drive unit of above-mentioned light collecting lens 12b cooperates mutually with control part 7 and forms irradiation position adjustment part.
Below, the flow chart based on Fig. 8 illustrates the rate-determining steps comprising above-mentioned flow process.
Along with the beginning of process, remove the supporting (step s1) comprising the support corresponding to regional area of the irradiation area of Line beam laser 150.Then, irradiating laser (step s2), the front on the scanning direction of irradiation position is measured by the apparent height of height finder 8 pairs of semiconductor substrates 100, measurement result is sent to control part 7 (step s3).In the control part 7 receiving measurement result, calculate the adjustment amount of light collecting lens 12b, during to make illuminated line beam laser 150 on locating, its focus is in assigned position relative to the surface of semiconductor substrate 100, and the drive unit corresponding to light collecting lens 12b sends control signal, to obtain this adjustment amount, thus the irradiation position (step s4) on adjustment direction of illumination.In addition, locate and grasped by control part 7 in advance, control part 7 is to control in the mode of stipulated time laggard Row sum-equal matrix according to the relation between sweep speed.
Then, whether determination processing terminates (step s5), if process terminates (step s5, "Yes"), ends process, if process do not terminate (step s5, "No"), return step s1 continue process.In addition, when the irradiation of laser starts, in step s 1, away from comprise laser irradiation area regional area outside support in, re-start the process of bearing semiconductor substrate.
By carrying out above-mentioned steps successively, annealing in process can be carried out to the face (such as whole face) desired by semiconductor substrate.In addition, in the adjustment of the laser irradiating position based on described elevation measurement, the bending adjustment corresponding to semiconductor substrate can be carried out, and adjust when can produce inclination in the movement along with base station, and uniform annealing in process can be carried out to treated side entirety.When such as obtaining annealing in process result, homogeneous crystallization can be obtained.
The present invention is applicable in the manufacture field of the display being used in the contour performance of OLED or high accuracy LCD, can tackle for the postradiation uneven standard had higher requirements.
In addition, in the present invention, even if substrate size maximizes further, also without the need to changing the size of the entirety such as mounting table, but just easily can carry out correspondence by adding support, the weight of the mounting table produced because of maximization or the problem of flatness can be solved.
As described above, describe the present invention based on above-mentioned execution mode, but the present invention is not limited to the content of above-mentioned execution mode, suitable change can be done without departing from the scope of the invention.
Label declaration
1 laser machining device
1a laser machining device
2 process chambers
3 scanning means
4 supports
6 insert window
7 control parts
10 LASER Light Source
12 optical systems
12b light collecting lens
40 fulcrum posts
42 supporting slices
50 supporting absorbing cylinders
60 supporting Attraction blocks
100 semiconductor substrates
Claims (15)
1. to anneal the manufacture method of handled object,
Scan also irradiating laser relative to handled object, to carry out the annealing of described handled object, to it is characterized in that,
Described handled object is supported by multiple position, along with the relative scanning of described laser, remove the supporting of the regional area of the described handled object to the irradiation area comprising described laser successively, and along with the movement of described irradiation area, the irradiation of described laser terminates, successively again supporting relieve described supporting regional area.
2. the manufacture method of annealing handled object as claimed in claim 1, it is characterized in that, when removing described supporting, the service portion supported described in described regional area departs from described handled object.
3. the manufacture method of annealing handled object as claimed in claim 1 or 2, it is characterized in that, described handled object is non-single crystal semiconductor substrate.
4. the manufacture method of annealing handled object as claimed in claim 3, it is characterized in that, described non-single crystal semiconductor substrate is non-monocrystalline silicon substrate.
5. the manufacture method of the annealing handled object according to any one of Claims 1-4, is characterized in that, described laser is pulse laser, and the beam profile shape on described scanning direction has the par of even intensity.
6. the manufacture method of the annealing handled object according to any one of claim 1 to 5, it is characterized in that, when irradiating described laser, at the scanning direction front side of described irradiation area, in the described regional area relieving described supporting, detect the position of the described handled object on the direction of illumination of described laser, based on the result of this detection, adjust the irradiation position relative to the described laser on the direction of illumination of detection position, described laser.
7. a laser annealing base station, it is characterized in that, comprise multiple support, the plurality of support supports described handled object at multiple positions of the lower face side of handled object, and described handled object carries out relative scanning by laser and irradiated by from upper surface side.
8. laser annealing base station as claimed in claim 7, it is characterized in that, described support has can at the movable part of above-below direction movement, and when supporting described handled object, described movable part rises, when removing the supporting of described handled object, described movable part declines.
9. laser annealing base station as claimed in claim 7 or 8, it is characterized in that, described support has suction unit in upper end, described handled object is adsorbed by the attraction of described suction unit when supporting described handled object, when removing the supporting relative to described handled object, stop the attraction of described suction unit.
10. the laser annealing base station according to any one of claim 7 to 9, it is characterized in that, comprise control part, the switching action of this control part to described support controls, this control part, according to the irradiation position of the described laser on the direction, face of described handled object, controls carry out the described supporting of described support and remove the switching action of described supporting.
11. laser annealing base stations as claimed in claim 10, it is characterized in that, described control part carries out following switching controls: namely, according to relative scanning and the irradiation of described laser, remove the supporting to the described support that the regional area of the described semiconductor substrate comprising the irradiation area that described laser irradiates supports successively, and utilize described support to support regional area that the irradiation comprising the irradiation completing described laser completes region, that relieve described supporting successively.
12. 1 kinds of laser annealing processing unit, is characterized in that, comprising:
Laser annealing base station according to any one of claim 7 to 9;
LASER Light Source, this LASER Light Source Output of laser;
Optical system, this optical system derives described laser, and described laser is irradiated to the handled object supported by described annealing base station; And
Scanning means, this scanning means scans described laser relative to described handled object.
13. laser annealing processing unit as claimed in claim 12, is characterized in that, comprise control part, the switching action of this control part to the scanning motion of described scanning means and described support controls.
14. laser annealing processing unit as claimed in claim 13, it is characterized in that, comprising: position detection part, when irradiating described laser, this position detection part in the front, scanning direction of the irradiation area of handled object, the position of the handled object on detection laser direction of illumination; And irradiation position adjustment part, this irradiation position adjustment part adjusts the irradiation position of described laser on laser direction of illumination,
Described control part receives the testing result of described position detection part, according to this testing result, is adjusted by the described irradiation position of described irradiation position adjustment part to the described laser being irradiated to described detection position.
15. laser annealing processing unit as claimed in claim 14, it is characterized in that, described irradiation position adjustment part is included in described optical system the mechanism that the focal position of described laser adjusts.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013065173A JP5858438B2 (en) | 2013-03-26 | 2013-03-26 | Method of manufacturing annealed object, laser annealing base and laser annealing apparatus |
| JP2013-065173 | 2013-03-26 | ||
| PCT/JP2014/053936 WO2014156380A1 (en) | 2013-03-26 | 2014-02-19 | Method for producing annealing processed body, laser annealed base, and laser annealing processing device |
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| CN104412366A true CN104412366A (en) | 2015-03-11 |
| CN104412366B CN104412366B (en) | 2016-04-27 |
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| Country | Link |
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| JP (1) | JP5858438B2 (en) |
| KR (1) | KR101583535B1 (en) |
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| CN108226166A (en) * | 2017-12-29 | 2018-06-29 | 信利（惠州）智能显示有限公司 | A kind of automatic optics inspection scan method |
| CN108352347A (en) * | 2015-10-27 | 2018-07-31 | 株式会社日本制钢所 | Handled object carrying device, semiconductor manufacturing apparatus and handled object transport method |
| CN109863577A (en) * | 2016-10-20 | 2019-06-07 | 株式会社日本制钢所 | Manufacturing method, laser annealing base station and the laser annealing processing unit of annealing handled object |
| CN109887876A (en) * | 2017-12-06 | 2019-06-14 | 上海微电子装备（集团）股份有限公司 | Vacuum chuck, substrate adsorption method, laser anneal device and method |
| CN114393295A (en) * | 2017-03-16 | 2022-04-26 | 株式会社日本制钢所 | Laser irradiation device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP7336369B2 (en) * | 2019-11-25 | 2023-08-31 | 株式会社Ｓｃｒｅｅｎホールディングス | SUBSTRATE SUPPORTING DEVICE, HEAT TREATMENT APPARATUS, SUBSTRATE SUPPORTING METHOD, HEAT TREATMENT METHOD |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN104412366B (en) | 2016-04-27 |
| JP5858438B2 (en) | 2016-02-10 |
| JP2014192267A (en) | 2014-10-06 |
| WO2014156380A1 (en) | 2014-10-02 |
| KR20140143852A (en) | 2014-12-17 |
| KR101583535B1 (en) | 2016-01-08 |
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