CN104485275A - 一种用于定位量子点外延生长的倒三棱锥衬底制备方法 - Google Patents
一种用于定位量子点外延生长的倒三棱锥衬底制备方法 Download PDFInfo
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- 239000002096 quantum dot Substances 0.000 title claims abstract description 25
- 239000000758 substrate Substances 0.000 title claims abstract description 21
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 238000000034 method Methods 0.000 claims abstract description 12
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 8
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 8
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 6
- 238000001020 plasma etching Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims description 2
- 238000010894 electron beam technology Methods 0.000 claims description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 2
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 6
- 238000000609 electron-beam lithography Methods 0.000 abstract description 5
- 238000004891 communication Methods 0.000 abstract description 3
- 238000001312 dry etching Methods 0.000 abstract description 2
- 238000001039 wet etching Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
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- 238000002955 isolation Methods 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
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Abstract
本发明提出了一种用于定位量子点外延生长的“倒三棱锥”衬底制备方法，采用电子束光刻(EBL)并结合湿法/干法刻蚀技术在GaAs晶片上制备所需图形。在这种“倒三棱锥”图形衬底上可制备出高质量、高反射率的超晶格布拉格反射镜（DBR）层。同时，采用这种方法可以实现高质量超低密度、位置可控量子点的生长，并以此为基础为制作通信波段用的量子点单光子发射器件打下基础。
Description
技术领域
本发明涉及半导体光电子制备工艺技术，属于半导体光电子新型结构工艺领域。
背景技术
量子点单光子源发射的单光子在理想情况下是由单个量子点发光实现的，因此能够有效隔离单个量子点就变得相当重要。当前，用来制作实现量子点单光子发射器件的量子点主要是通过自组织生长方法获得，它们在生长表面上随机分布并且点密度很高，每平方微米上就有几个到几百个量子点，因此有效地隔离单个量子点相当困难。另外，由于这些量子点在生长表面分布的随机性，可靠地控制其在光学微腔中的位置也变得相当不易。为了解决这些问题，研究者提出采用控制量子点在生长表面成核位置的方法实现位置可控量子点，这其中最有效的途径是在图形衬底上生长量子点。此方法的最大优点在于获得的量子点不但密度可控，而且它在生长表面上的位置也可控，这就使得隔离单个量子点的工作完全脱离了现有光刻和腐蚀技术的限制而变得相当简单。
本发明提出了一种用于定位量子点外延生长的“倒三棱锥”衬底制备方法，采用电子束光刻(EBL)并结合湿法/干法刻蚀技术在GaAs晶片上制备所需图形。在这种“倒三棱锥”图形衬底上可制备出高质量、高反射率的超晶格布拉格反射镜（DBR）层。同时，采用这种方法可以实现高质量超低密度、位置可控量子点的生长，并以此为基础为制作通信波段用的量子点单光子发射器件打下基础。
发明内容
本发明是一种用于定位量子点外延生长的“倒三棱锥”衬底制备方法，是基于高质量超低密度、位置可控量子点的生长需求提出的，将为制作通信波段用的量子点单光子发射器件打下基础。
具体实施
一种用于定位量子点外延生长的“倒三棱锥”衬底制备方法过程如下：n型GaAs衬底(111) B偏2o 面(1) ，如图1所示。
在GaAs衬底(111) B偏2o 面沉积SiO2 (2) ，时间20sec；在SiO2 上均匀制备一层聚甲基丙烯酸甲酯PMMA(3)，退火20sec，温度150℃，如图2(a)所示。利用电子束（EBL）、丙酮和超生去除特定图形区域的PMMA(3)，如图2(b)所示。采用反应离子刻蚀（RIE）去除暴露的SiO2层，刻蚀气体采用O2 和ChF3/Ar，通O2时间7min，ChF3/Ar时间4min；采用RIE刻蚀SiO2后暴露出的GaAs衬底(111) B偏2o 面(1)，刻蚀气体为Ar气，时间30sec，再采用(Br/甲醇0.05%)溶液刻蚀12sec，刻蚀出完整的“倒三棱锥”衬底，如图2(c)所示。利用HF去除SiO2 ，HF腐蚀70sec，通O2 等离子 2min，功率100W，之后利用HF 腐蚀5min，效果如图2(d)所示。制备效果如图3所示。
附图说明：
图1“倒三棱锥”图形衬底示意图。
图2“倒三棱锥”图形衬底制备过程示意图。
图3“倒三棱锥”图形衬底扫描电子显微镜（SEM）图。
Claims (1)
1.一种用于定位量子点外延生长的“倒三棱锥”衬底制备方法过程如下：n型GaAs衬底(111) B偏2o 面(1)；在GaAs衬底(111) B偏2o 面沉积SiO2 (2) ，时间20sec，在SiO2 上均匀制备一层聚甲基丙烯酸甲酯PMMA(3)，退火20sec，温度150℃；利用电子束（EBL）、丙酮和超生去除特定图形区域的PMMA(3)；采用反应离子刻蚀（RIE）去除暴露的SiO2层，刻蚀气体采用O2 和ChF3/Ar，通O2时间7min，ChF3/Ar时间4min；采用RIE刻蚀去除SiO2后暴露出的GaAs衬底(111) B偏2o 面(1)，刻蚀气体为Ar气，时间30sec，再采用(Br/甲醇0.05%)溶液刻蚀12sec，刻蚀出完整的“倒三棱锥”衬底；利用HF去除SiO2 ，HF腐蚀70sec，通O2 等离子 2min，功率100W，之后利用HF 腐蚀5min。
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| CN201410835183.9A CN104485275A (zh) | 2014-12-30 | 2014-12-30 | 一种用于定位量子点外延生长的倒三棱锥衬底制备方法 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20000019472A (ko) * | 1998-09-11 | 2000-04-15 | 박호군 | 양자구조 형성방법 |
| CN101315882A (zh) * | 2007-05-31 | 2008-12-03 | 中国科学院半导体研究所 | 以二氧化硅为掩模定位生长量子点的方法 |
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- 2014-12-30 CN CN201410835183.9A patent/CN104485275A/zh active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20000019472A (ko) * | 1998-09-11 | 2000-04-15 | 박호군 | 양자구조 형성방법 |
| CN101315882A (zh) * | 2007-05-31 | 2008-12-03 | 中国科学院半导体研究所 | 以二氧化硅为掩模定位生长量子点的方法 |
Non-Patent Citations (1)
| Title |
|---|
| S. WATANABE,ET AL.: "Growth and optical characterization of dense arrays of site-controlled quantum dots grown in inverted pyramids", 《PHYSICA E: LOW-DIMENSIONAL SYSTEMS AND NANOSTRUCTURES》 * |
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