CN104483817A - Device for detecting system wave aberration of photoetchingprojection objective - Google Patents
Device for detecting system wave aberration of photoetchingprojection objective Download PDFInfo
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- CN104483817A CN104483817A CN201410819658.5A CN201410819658A CN104483817A CN 104483817 A CN104483817 A CN 104483817A CN 201410819658 A CN201410819658 A CN 201410819658A CN 104483817 A CN104483817 A CN 104483817A
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Abstract
A device for detecting system wave aberration of a photoetchingprojection objective comprises a light source, an illuminating system, a pinhole space filter, a beamsplitter, a to-be-detected projection objective, a spherical reflector, a two-dimensional grating, a space filter and an image sensor. According to the device, a level selection window is taken as the space filter, so that noise is reduced, the measuring accuracy is improved, and the defect of limitation of Talbot distance to the image sensor position is overcome. The spherical reflector is added to a light path, can be used for detection of system wave aberration of an immersedprojection objective and can also be used for detection of system wave aberration of a non-immersedprojection objective; full-field system wave aberration of the projection objective can be detected, and wave aberration represented by 36 Zernike coefficients is obtained; and with adoption of a light path structure of a shearing interferometer, the device has the advantages of high detecting accuracy, good repeatability and the like.
Description
Technical field
The invention belongs to technical field of optical detection, particularly relate to a kind of pick-up unit of liquid immersion lithography projection objective system wave aberration.
Background technology
Optical projection lithography is the principle utilizing optical projection imaging, the IC figure of high resolution on mask being transferred to the optical exposure process on gluing silicon chip in the mode of exposure, is the photoetching technique current most widely used in VLSI (very large scale integrated circuit) manufacture process, technical progress is the fastest.Photoetching process directly determines the characteristic dimension of large scale integrated circuit, and be the critical process that large scale integrated circuit manufactures, projection lens of lithography machine is then the core component of photoetching process, is also the maximum subsystem of difficulty.
Immersion lithography technology substitutes air (mostly being water at present) with the medium of high index of refraction between the projection objective camera lens lower surface and wafer of conventional lithography machine, to reach the object shortening exposure light source wavelength and increase camera lens numerical aperture, thus improve resolution.Employing immersion technology and the chip feature sizes coordinating other resolution enhance technology that photoetching process is realized extend to 45nm with lower node.The impact that system wave aberration controls lithographic feature size is fairly obvious, has a strong impact on image quality, is one of significant index evaluating projection lens of lithography machine performance.The numerical aperture of liquid immersion lithography projection objective reaches more than 1.3, and system wave aberration will control to below 1.2nm, and this proposes higher challenge and performance requirement to the detection realizing projection objective wave aberration.
US Patent No. 20060097205A1 have employed the structure that can detect immersion projection objective optical property, integrated interferometer unit in projection exposure optical system.The light that light source sends is divided into reference light and test light through beam splitter, test light incides reflector element after turning to optical system to enter tested projection objective, reflector element is made up of plano-convex catoptron, the immersion liquid of test light through being full of image space is reflected back projection objective again, test light through projection objective is interfered with not produced at interferometer unit by the reference light of projection objective, receive interference fringe by detector, realize the detection to Performance of Optical System.The method shortcoming is the impact being difficult to eliminate coma, and especially immersion projection exposure optical system is generally adopted to the projection objective of high NA, the spatial resolution of integrated interferometer unit can not meet the requirement of measurement, and measuring accuracy is reduced.
Summary of the invention
In order to solve problems of the prior art, the invention provides one and can be used for liquid immersion lithography projection objective High Definition Systems wave aberration pick-up unit, this device can improve the measuring accuracy of wave aberration,
The technical scheme that technical solution problem of the present invention adopts is as follows:
A kind of photoetching projection objective lens system wave aberration pick-up unit, this device comprises: light source, illuminator, aperture spatial filter, beam-splitter, projection objective to be measured, spherical reflector, two-dimensional grating, spatial filter and imageing sensor; Light source is launched illuminating bundle and is entered illuminator, and after regulating light distribution and lighting system by illuminator, outgoing beam produces spherical wave front light beam after beam-splitter by diffraction after aperture spatial filter, enters projection objective to be measured; Spherical reflector is impinged perpendicularly on after projection objective outgoing to be measured, projection objective to be measured is returned from the light of spherical reflector reflection, the light beam returned reflects on the light splitting surface of beam-splitter, turn to and incide two-dimensional grating surface, with the light of aberration information by two-dimensional grating institute diffraction, spatial filter retains in X and Y-direction ± 1 order diffraction light make it to pass through; By carry after spatial filter tested projection objective wave aberration information ± after 1 order diffraction light interferes, and gather interference fringe picture by imageing sensor.
The invention has the beneficial effects as follows: the present invention by using level time selection window to make noise reduce as spatial filter and measuring accuracy is improved, and overcomes the restriction of Talbot distance to position of image sensor.Add spherical reflector in the optical path, can be used for the detection of immersion projection objective system wave aberration, also can be used for the detection of non-immersion projection objective system wave aberration; The system wave aberration detection of full filed can be carried out projection objective, obtain the wave aberration that 36 zernike coefficients represent; Owing to have employed the light channel structure of shearing interferometer, there is accuracy of detection high, the advantage such as reproducible.
Accompanying drawing explanation
The structural drawing of a kind of photoetching projection objective lens system of Fig. 1 the present invention wave aberration pick-up unit.
Fig. 2 two-dimensional grating structure schematic diagram of the present invention.
Fig. 3 Image space filter schematic of the present invention.
Embodiment
Below in conjunction with drawings and Examples, the present invention is described in further details.
As shown in Figure 1, a kind of photoetching projection objective lens system wave aberration pick-up unit, this device comprises: produce the light source 1 that illuminating bundle is used; Adjust the illuminator 2 of the distribution of described light source intensity and lighting system; Aperture spatial filter 3; Scribble the beam-splitter 4 of semi-transparent semi-reflecting film; Can by the projection objective 5 of mask graph imaging; Spherical reflector 6; Spherical reflector can be carried and pinpoint three-dimensional working platform 7; Two-dimensional grating 8; Spatial filter 9; Can bearing space wave filter pinpoint spatial filter micropositioner 10; Collimating mirror 11; For gathering the imageing sensor 12 of interference fringe.The light that light source 1 sends incides aperture spatial filter 3 surface through illuminator 2, and produce spherical wave front by pinhole difiration, wherein hole diameter is less than incident beam resolution of diffraction.Through the filter action of spatial filter 3, eliminate the aberration that illuminator 2 causes.The spherical wave front produced by aperture spatial filter 3 diffraction enters projection objective 5 to be measured through beam-splitter 4, beam-splitter 4 light splitting surface is coated with part reflective semitransparent film, from the horizontal by 45 ° of placements, under the prerequisite not affecting measurement, beam-splitter 4 should as far as possible close to projection objective 5.Impinge perpendicularly on the center of the spherical reflector 6 scribbling high-reflecting film with the light of aberration information after projection objective 5 outgoing, medium between the lower surface of spherical reflector 6 and projection objective 5 can be high index of refraction immersion liquid, as water, also can be gas, as air, spherical reflector 6 is carried by three-dimensional working platform 7 and accurately locates.The light reflected from spherical reflector 6 reflects through the light splitting surface of projection objective 5 at beam-splitter 4, turns to and enters two-dimensional grating 8, with the light of aberration information by two-dimensional grating 8 diffraction.After level time selection spatial filter 9 is positioned at two-dimensional grating 8, as far as possible near two-dimensional grating 8.Spatial filter 9 is made up of four windows, and object to select in X and Y-direction ± 1 order diffraction light make it by the window in spatial filter 9, the diffraction light of other grades times all by spatial filter 9 by.Spatial filter 9 base material is silicon or melts quartz etc., the UV-resistant layer material such as deposition chromium, nickel, tantalum on base material, and by electron beam exposure or the required square window of reactive ion beam etching (RIBE) method preparation.Spatial filter 9 is carried by spatial filter worktable 10 and accurately locates, and makes (+1 ,+1), (+1 ,-1), (-1 ,-1) and (-1 ,+1) four restraint the center of diffraction light by spatial filter 9 window.As spatial filter 9, noise is reduced by using level time selection window and measuring accuracy is improved, and overcome the restriction of Talbot distance to imageing sensor 12 position.By carry after spatial filter 9 tested projection objective 5 wave aberration information ± 1 order diffraction light interferes and gathers interference fringe picture by imageing sensor 12, the corrugated information on two orthogonal directionss can be obtained due to employing two-dimensional grating 8 simultaneously, computing machine is utilized to process interferogram, adopt differential Zernike polynomial expression to carry out Wavefront Fitting, finally obtain the wave aberration that 36 Zernike coefficients represent.
Wherein, it is the KrF excimer laser that wavelength is about the ArF excimer laser of 193nm or wavelength and is about 248nm that light source 1 adopts, and also can be the laser instrument of visible light wave range.
Illuminator 2 comprises extender lens group, beam shaping etc., and lighting system comprises traditional lighting, ring illumination, secondary illumination etc.
Aperture spatial filter 3 is positioned at tested projection objective object space plane, by electron beam exposure or the preparation of reactive ion beam etching (RIBE) method.
Beam-splitter 4 material is for melting quartz, and placement at 45 ° with optical axis direction, under the prerequisite not affecting measurement, beam-splitter 4 should as far as possible close to projection objective 3.
Projection objective 5 can be total transmissivity formula projection objective, Zigzag type projection objective, total-reflection type projection objective etc.
Three-dimensional working platform 7, can carry spherical reflector 6 and accurately locate.
Two-dimensional grating 8 can be amplitude grating or phase grating, and two-dimensional grating 8 is between beam-splitter 4 and spatial filter 9.
Spatial filter 9, base material is silicon or melts quartz etc., the UV-resistant layer material such as deposition chromium, nickel, tantalum on base material, and by electron beam exposure or the required square window of reactive ion beam etching (RIBE) method preparation, spatial filter 9 is between two-dimensional grating 8 and spatial filter micropositioner 10.
Spatial filter micropositioner 10 can also accurately be located by bearing space wave filter 9.
Collimating mirror 11 is between two-dimensional grating 8 and imageing sensor 12.
Imageing sensor 12 for gathering interference fringe, as CCD.
Claims (8)
1. a photoetching projection objective lens system wave aberration pick-up unit, it is characterized in that, this device comprises: light source, illuminator, aperture spatial filter, beam-splitter, projection objective to be measured, spherical reflector, two-dimensional grating, spatial filter and imageing sensor; Described light source is launched illuminating bundle and is entered illuminator, and after regulating light distribution and lighting system by illuminator, outgoing beam produces spherical wave front light beam after beam-splitter by diffraction after aperture spatial filter, enters projection objective to be measured; Spherical reflector is impinged perpendicularly on after projection objective outgoing to be measured, projection objective to be measured is returned from the light of spherical reflector reflection, the light beam returned reflects on the light splitting surface of beam-splitter, turn to and incide two-dimensional grating surface, with the light of aberration information by two-dimensional grating institute diffraction, spatial filter retains in X and Y-direction ± 1 order diffraction light make it to pass through; By carry after spatial filter tested projection objective wave aberration information ± after 1 order diffraction light interferes, and gather interference fringe picture by imageing sensor.
2. a kind of photoetching projection objective lens system wave aberration pick-up unit as claimed in claim 1, it is characterized in that, the KrF excimer laser that described light source adopts wavelength to be about the ArF excimer laser of 193nm or wavelength to be about 248nm also can be the laser instrument of visible light wave range.
3. a kind of photoetching projection objective lens system wave aberration pick-up unit as claimed in claim 1, it is characterized in that, described aperture spatial filter is positioned at tested projection objective object space plane.
4. a kind of photoetching projection objective lens system wave aberration pick-up unit as claimed in claim 1, is characterized in that, described beam-splitter is for melting quartz, and surface is part reflective semitransparent film, placement at 45 ° with optical axis direction, infinite approach projection objective.
5. a kind of photoetching projection objective lens system wave aberration pick-up unit as claimed in claim 1, it is characterized in that, described spherical reflector scribbles high-reflecting film; Between spherical reflector and projection objective lower surface, medium is high index of refraction immersion liquid or gas.
6. a kind of photoetching projection objective lens system wave aberration pick-up unit as claimed in claim 1, it is characterized in that, this device also comprises: spatial filter micropositioner; Described spatial filter micropositioner carrying also accurate located space wave filter.
7. a kind of photoetching projection objective lens system wave aberration pick-up unit as claimed in claim 1, it is characterized in that, described spatial filter is made up of four windows, make (+1,-1), (+1, + 1), (-1 ,+1) and (-1 ,-1) four bundle diffraction light passes through.
8. a kind of photoetching projection objective lens system wave aberration pick-up unit as claimed in claim 1, is characterized in that, described spatial filter and two-dimensional grating infinite approach.
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106647176A (en) * | 2015-10-30 | 2017-05-10 | 上海微电子装备有限公司 | Wave aberration measurement device and method |
| CN107463070A (en) * | 2017-09-22 | 2017-12-12 | 深圳市华星光电技术有限公司 | Exposure light source system |
| WO2018064827A1 (en) * | 2016-10-09 | 2018-04-12 | 中国科学院长春光学精密机械与物理研究所 | System wave aberration measurement method capable of calibrating system error |
| CN109029935A (en) * | 2018-08-30 | 2018-12-18 | 中国科学院苏州生物医学工程技术研究所 | The spacing bias and wave front aberration integrated measurer of optical lens |
| CN109470236A (en) * | 2018-11-26 | 2019-03-15 | 中国科学院长春光学精密机械与物理研究所 | A kind of star sensor |
| CN109580183A (en) * | 2018-12-20 | 2019-04-05 | 中国科学院苏州生物医学工程技术研究所 | Large-numerical aperture micro objective wave aberration measuring system and measurement method |
| US10365565B2 (en) | 2016-02-19 | 2019-07-30 | Asml Netherlands B.V. | Method of measuring a structure, inspection apparatus, lithographic system, device manufacturing method and wavelength-selective filter for use therein |
| CN110261066A (en) * | 2019-03-21 | 2019-09-20 | 复旦大学 | The micro- detection light beam spotting device near field based on shear interference |
| CN114636545A (en) * | 2022-03-01 | 2022-06-17 | 上海精积微半导体技术有限公司 | Wide-spectrum objective lens vertical axis chromatic aberration detection system and method and semiconductor device |
| CN114739636A (en) * | 2022-03-01 | 2022-07-12 | 上海精积微半导体技术有限公司 | Optical objective axial chromatic aberration detection method and system and semiconductor equipment |
| WO2023120604A1 (en) * | 2021-12-23 | 2023-06-29 | 京セラ株式会社 | Measuring device, adjusting device, and measuring method |
| US11906907B2 (en) | 2017-12-12 | 2024-02-20 | Asml Netherlands B.V. | Apparatus and method for determining a condition associated with a pellicle |
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Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106647176A (en) * | 2015-10-30 | 2017-05-10 | 上海微电子装备有限公司 | Wave aberration measurement device and method |
| CN106647176B (en) * | 2015-10-30 | 2019-03-12 | 上海微电子装备（集团）股份有限公司 | Wave aberration measuring device and method |
| US10365565B2 (en) | 2016-02-19 | 2019-07-30 | Asml Netherlands B.V. | Method of measuring a structure, inspection apparatus, lithographic system, device manufacturing method and wavelength-selective filter for use therein |
| US10775704B2 (en) | 2016-02-19 | 2020-09-15 | Asml Netherlands B.V. | Method of measuring a structure, inspection apparatus, lithographic system, device manufacturing method and wavelength-selective filter for use therein |
| WO2018064827A1 (en) * | 2016-10-09 | 2018-04-12 | 中国科学院长春光学精密机械与物理研究所 | System wave aberration measurement method capable of calibrating system error |
| CN107463070B (en) * | 2017-09-22 | 2019-08-30 | 深圳市华星光电技术有限公司 | Exposure light source system |
| CN107463070A (en) * | 2017-09-22 | 2017-12-12 | 深圳市华星光电技术有限公司 | Exposure light source system |
| US11906907B2 (en) | 2017-12-12 | 2024-02-20 | Asml Netherlands B.V. | Apparatus and method for determining a condition associated with a pellicle |
| CN109029935A (en) * | 2018-08-30 | 2018-12-18 | 中国科学院苏州生物医学工程技术研究所 | The spacing bias and wave front aberration integrated measurer of optical lens |
| CN109029935B (en) * | 2018-08-30 | 2024-02-27 | 中国科学院苏州生物医学工程技术研究所 | Integrated measuring device for distance decentration and wave front aberration of optical lens |
| CN109470236A (en) * | 2018-11-26 | 2019-03-15 | 中国科学院长春光学精密机械与物理研究所 | A kind of star sensor |
| CN109580183A (en) * | 2018-12-20 | 2019-04-05 | 中国科学院苏州生物医学工程技术研究所 | Large-numerical aperture micro objective wave aberration measuring system and measurement method |
| CN110261066A (en) * | 2019-03-21 | 2019-09-20 | 复旦大学 | The micro- detection light beam spotting device near field based on shear interference |
| WO2023120604A1 (en) * | 2021-12-23 | 2023-06-29 | 京セラ株式会社 | Measuring device, adjusting device, and measuring method |
| CN114636545A (en) * | 2022-03-01 | 2022-06-17 | 上海精积微半导体技术有限公司 | Wide-spectrum objective lens vertical axis chromatic aberration detection system and method and semiconductor device |
| CN114739636A (en) * | 2022-03-01 | 2022-07-12 | 上海精积微半导体技术有限公司 | Optical objective axial chromatic aberration detection method and system and semiconductor equipment |
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