CN101464637B - Measurement apparatus and method for wave aberration of photo-etching machine projection objective - Google Patents
Measurement apparatus and method for wave aberration of photo-etching machine projection objective Download PDFInfo
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- CN101464637B CN101464637B CN2008102049750A CN200810204975A CN101464637B CN 101464637 B CN101464637 B CN 101464637B CN 2008102049750 A CN2008102049750 A CN 2008102049750A CN 200810204975 A CN200810204975 A CN 200810204975A CN 101464637 B CN101464637 B CN 101464637B
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Abstract
The invention provides a device and a device for measuring a wave aberration of a projection lens of a photo etching machine. The device comprises a light source, a lighting system, a first slit mark in a first direction, a second slit mark in a second direction, a silicon wafer, a worktable, an optical imaging system, a wave aberration sensor system and an interferometer. The device has the advantages of short measuring time and high accuracy, and can complete on-line detection of the wave aberration of the projection lens by utilizing the exposure light source of the photo etching machine.
Description
Technical field
The invention relates to a kind of wave aberration measurement mechanism and method, and particularly relevant for a kind of wave aberration of photo-etching machine projection objective measurement mechanism and method.
Background technology
Litho machine is one of key equipment in integrated circuit production and the manufacture process, and it is projected in the pattern on the mask on the silicon chip that scribbles photoresist through projection objective.Image quality is the key factor that influences litho machine photolithography resolution and alignment precision.Along with reducing of lithographic feature size, wave aberration of photo-etching machine projection objective is more and more outstanding to the influence of photoetching quality, the in situ detection of wave aberration has become indispensable function in the advanced projection mask aligner, and the measuring technique of wave aberration becomes the important means that guarantees lithography performance.
People such as Jun Ishikawa have invented a kind of pick-up unit and method (U.S. Patent number 6 of wave aberration of photo-etching machine projection objective in 2005,914,665 B2): utilize the pin hole mark that is positioned on the mask platform datum plate to produce the ideal ball ground roll, utilize the Hartmann's wave aberration sensor measurement wave aberration that is positioned on the work stage.This kind device is subjected to the restriction of pin hole label size, needs bigger input light intensity, and general photo-etching machine exposal light source is difficult to meet the demands, so need extra light source is installed, is specifically designed to the detection of wave aberration; Simultaneously since the light intensity that the wave aberration sensor receives a little less than, so that this kind device detects the time of wave aberration is generally longer, precision is relatively low.
Summary of the invention
The present invention provides a kind of wave aberration of photo-etching machine projection objective measurement mechanism and method, to improve the disappearance of prior art.
Wave aberration of photo-etching machine projection objective measurement mechanism of the present invention comprises the first slit mark, the second slit mark on the second direction, silicon chip, work stage, optical imaging system, interferometer, the Hartmann's wave aberration sensing system on light source, illuminator, the first direction.Above-mentioned first direction is vertical with above-mentioned second direction.Light source produces light beam; Illuminator shaping light beam produces first illuminating bundle on the above-mentioned first direction or second illuminating bundle on the above-mentioned second direction; First illuminating bundle sees through the first slit mark and obtains first light beam, and second illuminating bundle sees through the second slit mark and obtains second light beam; Work stage carrying and location silicon chip; Optical imaging system comprises projection objective, and first light beam forms first image of the first slit mark in silicon chip, and second light beam forms second image of the second slit mark in silicon chip; The wave aberration sensing system is positioned on the work stage, receives above-mentioned first image and above-mentioned second image, measures first wave aberration of the above-mentioned first direction of projection objective and second wave aberration of above-mentioned second direction; Interferometer location work stage is according to the final wave aberration of first wave aberration and second wave aberration calculating projection objective.
The present invention proposes a kind of wave aberration of photo-etching machine projection objective measuring method in addition, comprises the following steps: that it is first illuminating bundle on the first direction that illuminator is adjusted light beam that light source sends; The first slit mark that above-mentioned first illuminating bundle sees through on the above-mentioned first direction obtains first light beam; Above-mentioned first light beam forms first image in silicon chip through the optical imaging system with projection objective; The wave aberration sensing system is measured first wave aberration of above-mentioned first direction; The light beam that illuminator adjustment light source sends is second illuminating bundle on the second direction; The second slit mark that above-mentioned second illuminating bundle sees through on the above-mentioned second direction obtains second light beam; Above-mentioned second light beam forms second image in silicon chip through the optical imaging system with above-mentioned projection objective; The wave aberration sensing system is measured second wave aberration of above-mentioned second direction; Calculate the final wave aberration of above-mentioned projection objective according to above-mentioned first wave aberration and the above-mentioned second phase of wave difference.
The present invention utilizes a pair of orthogonal slit mark, on orthogonal both direction, produce the ideal spherical face wavefront respectively, utilization is positioned at Hartmann's wave aberration sensor on the work stage and surveys wavefront through the described both direction behind the projection objective respectively, goes out final projection objective wave aberration according to the wavefront combination calculation of described both direction.Test duration of the present invention is short, precision is high, and utilizes the photo-etching machine exposal light source can finish the online detection of projection objective wave aberration.
For above and other objects of the present invention, feature and advantage can be become apparent, preferred embodiment cited below particularly, and conjunction with figs. are described in detail below.
Description of drawings
Figure 1 shows that the structural representation of wave aberration of photo-etching machine projection objective measurement mechanism according to an embodiment of the invention.
Figure 2 shows that the datum plate of wave aberration of photo-etching machine projection objective measurement mechanism among Fig. 1 and the synoptic diagram of slit mark.
Fig. 3 a is depicted as the light distribution synoptic diagram of first illuminating bundle in pupil of the first slit mark on the first direction that is used to throw light on.
Fig. 3 b is depicted as the light distribution synoptic diagram of second illuminating bundle in pupil of the second slit mark on the second direction that is used to throw light on.
Figure 4 shows that the synoptic diagram of the wave aberration sensing system of wave aberration of photo-etching machine projection objective measurement mechanism among Fig. 1.
Synoptic diagram when the incident beam wavefront that Fig. 5 a is depicted as wave aberration sensing system among Fig. 2 is desirable wavefront.
Synoptic diagram when the incident beam wavefront that Fig. 5 b is depicted as wave aberration sensing system among Fig. 2 is actual wavefront.
Fig. 6 a is depicted as the synoptic diagram of the wave aberration of the projection objective vertical direction of simulation calculation according to an embodiment of the invention.
Fig. 6 b is depicted as the synoptic diagram of the wave aberration of the projection objective horizontal direction of simulation calculation according to an embodiment of the invention.
Fig. 6 c is depicted as the synoptic diagram of the final wave aberration of the projection objective that the wave aberration according to projection objective horizontal direction among the wave aberration of projection objective vertical direction among Fig. 6 a and Fig. 6 b calculates.
Figure 7 shows that the process flow diagram of wave aberration of photo-etching machine projection objective measuring method according to an embodiment of the invention.
Embodiment
Figure 1 shows that the structural representation of wave aberration of photo-etching machine projection objective measurement mechanism according to an embodiment of the invention.Figure 2 shows that the datum plate of wave aberration of photo-etching machine projection objective measurement mechanism among Fig. 1 and the synoptic diagram of slit mark.Fig. 3 a is depicted as the light distribution synoptic diagram of first illuminating bundle in pupil of the first slit mark on the first direction that is used to throw light on.Fig. 3 b is depicted as the light distribution synoptic diagram of second illuminating bundle in pupil of the second slit mark on the second direction that is used to throw light on.Figure 4 shows that the synoptic diagram of the wave aberration sensing system of wave aberration of photo-etching machine projection objective measurement mechanism among Fig. 1.Please also refer to Fig. 1 to Fig. 4.
As shown in Figure 1, wave aberration of photo-etching machine projection objective measurement mechanism 1 comprises light source 101, illuminator 102, mask platform 103, mask 104, datum plate 105, silicon chip 106, work stage 107, optical imaging system 108, wave aberration sensing system 109 and interferometer 110.
In the present embodiment, light source 101 is the deep ultraviolet laser light source.The first slit mark S1 on the first direction on mask 104 or the datum plate 105 is the vertical direction mark, and the second slit mark S2 on the second direction is horizontal direction mark (as shown in Figure 2).First slit mark S1 among Fig. 2 and the part of the second slit mark S2 are the Chrome-free photic zone, and other parts are for there being the light tight district of chromium.
Further, in the present embodiment, wave aberration sensing system 109 is Hartmann's wave aberration sensing system, comprises collimating mirror group 201, microlens array 202, light intensity sensor 203 (as shown in Figure 4).
Please refer to Fig. 1 to Fig. 6 c, when measuring wave aberration, the light beam that light source 101 sends is adjusted into first illuminating bundle of vertical direction after illuminator 102, first illuminating bundle project the first slit mark S1 that is carved with vertical direction and horizontal direction the second slit mark S2 datum plate 105 or be carved with the first slit mark S1 of vertical direction and the mask 104 of the second slit mark S2 of horizontal direction on, through the first slit mark S1 and through optical imaging system 108, exposure forms first image to silicon chip 106.Accurately locate under the situation of work stage 107 in laser interferometer 110, work stage 107 drives the wave aberration that Hartmann's wave aberration sensing systems 109 are measured the projection objective vertical direction.The first video imaging light beam is after the collimating mirror group 201 of wave aberration sensing system 109, divergent beams are converted to parallel beam and shine microlens array 202, microlens array 202 is cut apart parallel beam and is focused on light intensity sensor 203 respectively, and light intensity sensor 203 can obtain divided little parallel beam focal position.If incident beam S wavefront is desirable wavefront, then little parallel beam focal position should be just in time corresponding under each is lenticular, shown in Fig. 5 a; Before if incident beam S wavefront is non-ideal waves, under then little parallel beam focal position is should be with each lenticular certain departing from arranged, shown in Fig. 5 b, can calculate the wave aberration (shown in Fig. 6 a) of vertical direction incident beam according to the focal position of the little parallel beam that measures.
Then, the light beam that light source 101 sends is adjusted into second illuminating bundle of horizontal direction after illuminator 102, second illuminating bundle project the first slit mark S1 that is carved with vertical direction and horizontal direction the second slit mark S2 datum plate 105 or be carved with the first slit mark S1 of vertical direction and the mask 104 of the second slit mark S2 of horizontal direction on, through second direction slit mark S2 and through optical imaging system 108, exposure forms second image to silicon chip 106.Accurately locate under the situation of work stage 107 in laser interferometer 110, work stage 107 drives the wave aberration that Hartmann's wave aberration sensing systems 109 are measured the projection objective horizontal directions.The second video imaging light beam is after the collimating mirror group 201 of wave aberration sensing system 109, divergent beams are converted to parallel beam and shine microlens array 202, microlens array 202 is cut apart parallel beam and is focused on light intensity sensor 203 respectively, and light intensity sensor 203 can obtain divided little parallel beam focal position.If incident beam S wavefront is desirable wavefront, then little parallel beam focal position should be just in time corresponding under each is lenticular, shown in Fig. 5 a; Before if incident beam S wavefront is non-ideal waves, under then little parallel beam focal position is should be with each lenticular certain departing from arranged, shown in Fig. 5 b, can calculate the wave aberration (shown in Fig. 6 b) of horizontal direction incident beam according to the focal position of the little parallel beam that measures.
At last, according to the wave aberration of vertical direction and horizontal direction, utilize interference fringe disposal routes such as phase extraction, phase unwrapping and wavefront fitting to calculate the final wave aberration (shown in Fig. 6 c) of projection objective.
Figure 7 shows that the process flow diagram of wave aberration of photo-etching machine projection objective measuring method according to an embodiment of the invention.As shown in Figure 7, the wave aberration of photo-etching machine projection objective measuring method comprises the following steps:
S601: the light beam that the adjustment light source sends is first illuminating bundle.The light beam that light source 101 sends is adjusted into first illuminating bundle on the first direction after illuminator 102.
S603: the first slit mark that first illuminating bundle sees through on the above-mentioned first direction obtains first light beam, and in the present embodiment, first slit on the above-mentioned first direction is labeled as the slit mark of vertical direction.
S605: first light beam forms first image in silicon chip through the optical imaging system with projection objective.
S607: first wave aberration of measuring above-mentioned first direction.In this step, accurately locate under the situation of work stage 107 in laser interferometer 110, work stage 107 drives first wave aberration that Hartmann's wave aberration sensing systems 109 are measured the projection objective first directions.The first video imaging light beam is after the collimating mirror group 201 of wave aberration sensing system 109, divergent beams are converted to parallel beam and shine microlens array 202, microlens array 202 is cut apart parallel beam and is focused on light intensity sensor 203 respectively, and light intensity sensor 203 can obtain divided little parallel beam focal position.If incident beam S wavefront is desirable wavefront, then little parallel beam focal position should be just in time corresponding under each is lenticular, shown in Fig. 5 a; Before if incident beam S wavefront is non-ideal waves, under then little parallel beam focal position is should be with each lenticular certain departing from arranged, shown in Fig. 5 b, can calculate the wave aberration of first direction (vertical direction) incident beam according to the focal position of the little parallel beam that measures.
S609: the light beam that the adjustment light source sends is second illuminating bundle.The light beam that light source 101 sends is adjusted into second illuminating bundle on the second direction after illuminator 102, and above-mentioned first direction is vertical with above-mentioned second direction.
S611: the second slit mark S2 that second illuminating bundle sees through on the above-mentioned second direction obtains second light beam, and in the present embodiment, the slit on the above-mentioned second direction is labeled as the slit mark of horizontal direction.
S613: second light beam forms second image in silicon chip through the optical imaging system with projection objective.
S615: second wave aberration of measuring above-mentioned second direction.In this step, accurately locate under the situation of work stage 107 in laser interferometer 110, work stage 107 drives second wave aberration that Hartmann's wave aberration sensing systems 109 are measured the projection objective second directions.The second video imaging light beam is after the collimating mirror group 201 of wave aberration sensing system 109, divergent beams are converted to parallel beam and shine microlens array 202, microlens array 202 is cut apart parallel beam and is focused on light intensity sensor 203 respectively, and light intensity sensor 203 can obtain divided little parallel beam focal position.If incident beam S wavefront is desirable wavefront, then little parallel beam focal position should be just in time corresponding under each is lenticular, shown in Fig. 5 a; Before if incident beam S wavefront is non-ideal waves, under then little parallel beam focal position is should be with each lenticular certain departing from arranged, shown in Fig. 5 b, can calculate the wave aberration of second direction (horizontal direction) incident beam according to the focal position interferometer of the little parallel beam that measures.
S617: the final wave aberration of calculating projection objective.Adopt differential Zernike fitting of a polynomial algorithm can obtain the final wave aberration of the projection objective 1081 that 36 Zernike coefficients represent.
In step S605, distribution and vertical direction slit mark Fig. 2 shown in of first illuminating bundle shown in Fig. 3 a in pupil is combined, be full of the pupil of whole projection objective in the time of can making illumination light through the projection objective of optical imaging system, promptly realized sampling fully, with having good coherence between the light that distributes on the time delay horizontal direction to the projection objective pupil; Same in step S613, distribution and horizontal direction slit mark Fig. 2 shown in of illuminating bundle shown in Fig. 3 b in pupil is combined, be full of the pupil of whole projection objective in the time of can making illumination light through the projection objective of optical imaging system, promptly realized sampling fully, with having good coherence between the light that distributes on the time delay vertical direction to the projection objective pupil.
The a pair of orthogonal slit mark that wave aberration of photo-etching machine projection objective measurement mechanism of the present invention and method are utilized, on orthogonal both direction, produce the ideal spherical face wavefront respectively, utilization is positioned at Hartmann's wave aberration sensor on the work stage and surveys wavefront through the described both direction behind the projection objective respectively, goes out final projection objective wave aberration according to the wavefront combination calculation of described both direction.Test duration of the present invention is short, precision is high, and utilizes the photo-etching machine exposal light source can finish the online detection of projection objective wave aberration.
Concrete case study on implementation only is a preferable case study on implementation of the present invention described in the present invention, is not to be used for limiting practical range of the present invention.Be that all equivalences of doing according to the content of the present patent application claim change and modification, all should belong to technology category of the present invention.
Claims (13)
1. a wave aberration of photo-etching machine projection objective measurement mechanism is characterized in that, comprising:
Light source produces light beam;
Illuminator is adjusted above-mentioned light beam, first illuminating bundle on the generation first direction or second illuminating bundle on the second direction, and above-mentioned first direction is vertical with above-mentioned second direction;
The first slit mark on the above-mentioned first direction;
The second slit mark on the above-mentioned second direction;
Above-mentioned first illuminating bundle sees through the above-mentioned first slit mark and obtains first light beam, and above-mentioned second illuminating bundle sees through the above-mentioned second slit mark and obtains second light beam;
Silicon chip;
Above-mentioned silicon chip is carried and located to work stage;
Optical imaging system comprises projection objective, and above-mentioned first light beam forms first image by the optical imaging system exposure image to above-mentioned silicon chip, and above-mentioned second direction light beam forms second image by the optical imaging system exposure image to above-mentioned silicon chip;
The wave aberration sensing system is positioned on the above-mentioned work stage, receives above-mentioned first image and above-mentioned second image, measures first wave aberration of the above-mentioned first direction of projection objective and second wave aberration of above-mentioned second direction; And
Interferometer is located above-mentioned work stage, electrically connects above-mentioned wave aberration sensing system, calculates the final wave aberration of above-mentioned projection objective according to above-mentioned first wave aberration and above-mentioned second wave aberration.
2. wave aberration of photo-etching machine projection objective measurement mechanism according to claim 1 is characterized in that above-mentioned wave aberration of photo-etching machine projection objective measurement mechanism also comprises:
Mask platform;
Mask is positioned on the aforementioned mask platform, and the first slit mark on the above-mentioned first direction and the second slit mark on the above-mentioned second direction are arranged on the aforementioned mask.
3. wave aberration of photo-etching machine projection objective measurement mechanism according to claim 1 is characterized in that above-mentioned wave aberration of photo-etching machine projection objective measurement mechanism also comprises:
Mask platform;
Datum plate is positioned on the aforementioned mask platform, and the first slit mark on the above-mentioned first direction and the second slit mark on the above-mentioned second direction are arranged on the said reference plate.
4. wave aberration of photo-etching machine projection objective measurement mechanism according to claim 1 is characterized in that wherein above-mentioned light source is the deep ultraviolet laser light source.
5. wave aberration of photo-etching machine projection objective measurement mechanism according to claim 1, it is characterized in that the diffraction limit of the width of the first slit mark on the wherein above-mentioned first direction and the second slit mark on the above-mentioned second direction less than above-mentioned optical imaging system, the first slit mark on the above-mentioned first direction and the length of the second slit mark on the above-mentioned second direction are greater than the diffraction limit of above-mentioned optical imaging system.
6. wave aberration of photo-etching machine projection objective measurement mechanism according to claim 1 is characterized in that wherein above-mentioned wave aberration sensing system is Hartmann's wave aberration sensing system.
7. wave aberration of photo-etching machine projection objective measurement mechanism according to claim 6 is characterized in that wherein above-mentioned Hartmann's wave aberration sensing system comprises beam collimation mirror group, microlens array, light intensity sensor.
8. wave aberration of photo-etching machine projection objective measurement mechanism according to claim 1 is characterized in that the slit on the wherein above-mentioned first direction is labeled as vertical direction slit mark, and the slit on the above-mentioned second direction is labeled as horizontal direction slit mark.
9. a wave aberration of photo-etching machine projection objective measuring method of using any described device in the claim 1 to 3 is characterized in that, comprises the following steps:
The light beam that illuminator adjustment light source sends is first illuminating bundle on the first direction;
The first slit mark that above-mentioned first illuminating bundle sees through on the above-mentioned first direction obtains first light beam;
Above-mentioned first light beam forms first image in silicon chip through the optical imaging system with projection objective;
The wave aberration sensing system is measured first wave aberration of above-mentioned first direction;
The light beam that illuminator adjustment light source sends is second illuminating bundle on the second direction;
The second slit mark that above-mentioned second illuminating bundle sees through on the above-mentioned second direction obtains second light beam;
Above-mentioned second light beam forms second image in silicon chip through the optical imaging system with above-mentioned projection objective;
The wave aberration sensing system is measured second wave aberration of above-mentioned second direction; And
Calculate the final wave aberration of above-mentioned projection objective according to above-mentioned first wave aberration and the above-mentioned second phase of wave difference.
10. wave aberration of photo-etching machine projection objective measuring method according to claim 9 is characterized in that wherein above-mentioned light source is the deep ultraviolet laser light source.
11. wave aberration of photo-etching machine projection objective measuring method according to claim 9 is characterized in that wherein above-mentioned wave aberration sensing system is Hartmann's wave aberration sensing system.
12. wave aberration of photo-etching machine projection objective measuring method according to claim 11 is characterized in that wherein above-mentioned Hartmann's wave aberration sensing system comprises beam collimation mirror group, microlens array, light intensity sensor.
13. wave aberration of photo-etching machine projection objective measuring method according to claim 9 is characterized in that wherein above-mentioned first direction is a vertical direction, above-mentioned second direction is a horizontal direction.
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Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102236260B (en) * | 2010-04-27 | 2013-05-22 | 上海微电子装备有限公司 | Wave aberration correction system and method |
| CN102236268B (en) * | 2011-07-20 | 2012-10-10 | 中国科学院上海光学精密机械研究所 | Photoetching projection objective wave aberration detection method based on space image frequency spectrum |
| JP6661371B2 (en) * | 2015-12-25 | 2020-03-11 | キヤノン株式会社 | Evaluation method, exposure method, and article manufacturing method |
| CN106646867B (en) * | 2016-12-16 | 2018-12-14 | 中国科学院光电研究院 | A kind of confocal alignment device of deep ultraviolet optical system and method |
| CN110568729B (en) * | 2018-06-05 | 2021-07-09 | 上海微电子装备（集团）股份有限公司 | Aberration measuring device and method |
| CN109164591B (en) * | 2018-08-10 | 2021-01-05 | 宁波舜宇仪器有限公司 | Computer-aided microscope objective lens assembling and adjusting method |
| CN114636545B (en) * | 2022-03-01 | 2023-06-20 | 上海精积微半导体技术有限公司 | System and method for detecting vertical axis chromatic aberration of wide-spectrum objective lens and semiconductor device |
| CN114739636B (en) * | 2022-03-01 | 2023-04-28 | 上海精积微半导体技术有限公司 | Optical objective axial chromatic aberration detection method, system and semiconductor device |
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