CN101320219B - Field measurement method for optical aberration of imaging optical system - Google Patents
Field measurement method for optical aberration of imaging optical system Download PDFInfo
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- CN101320219B CN101320219B CN2008100408551A CN200810040855A CN101320219B CN 101320219 B CN101320219 B CN 101320219B CN 2008100408551 A CN2008100408551 A CN 2008100408551A CN 200810040855 A CN200810040855 A CN 200810040855A CN 101320219 B CN101320219 B CN 101320219B
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Abstract
The invention provides an imaging optical system aberration field measurement method and a device thereof; the projection objective aberration is obtained through analyzing the aerial image of a photo-etching machine projection objective, which is formed by measuring the aerial image of a photo-etching machine projection objective. Compared with the existing methods, the method can greatly improve the measuring speed and overcome the shortcoming of the prior art of the long measuring period of the aberration.
Description
Technical field
The present invention relates to the on-site measurement method of imaging optical system aberration, particularly relate to aberration field measuring method for imaging optical system of photoetching apparatus.
Background technology
The present invention relates to the on-site measurement method of imaging optical system aberration, particularly relate to aberration field measuring method for imaging optical system of photoetching apparatus.
In the prior art, with the pattern that is formed on the various masks, with exposure light illumination, the middle exposure device that aforementioned pattern is copied on the substrates such as the wafer that is coated with photoresist, glass substrate via imaging optical system is known.
In recent years, semiconductor element is more and more highly integrated, requires the further miniaturization of its circuit patterns.Along with diminishing of lithographic feature size, the especially use of off-axis illumination and phase shifting mask, aberration becomes more and more outstanding to the influence of photoetching quality.Therefore the in-site measurement technology of litho machine projection imaging optical system is indispensable.
The measurement of imaging optical system aberration is carried out usually as follows.Below be example with the projection objective system.That is, aberration measurement is placed on the object plane with mask, images on the last aforesaid base plate of the picture of projection objective system, imaging is developed forming regulation pattern on the mask.Utilize scanning electron microscope (SEM) that the picture that has developed is measured then, obtain the aberration of aforementioned projection objective lens optical system according to measurement result, referring to prior art 1, " Novel aberration monitor for optical lithography. " Proc.SPIE 1999,3679,77-86.
But in the method for aforementioned techniques, because the photoresist crawling is even, the inhomogeneous treatment process error that waits of developing makes the measuring accuracy of aforementioned aberration fully not guarantee.And before utilizing SEM to observe, need carry out pre-treatment to silicon chip, as developing process, therefore the mensuration for aberration needs long time.
For fear of these problems, people have proposed the method for utilizing transmission-type image-position sensor (TIS) that aforementioned projection objective wave aberration is measured, it is the TAMIS technology, referring to prior art 2, " Aerial imagemeasurement methods for fast aberration set-up and illumination pupil verification. " Proc.SPIE 2001,4346,394-407.TIS is made of two kinds of detectors: isolated line and a square hole of a cover submicron order, independently photodiode is all placed in isolated line and square hole below.Wherein isolated line comprises two kinds of the isolated lines of the isolated line of directions X and Y direction, and the isolated line of different directions is respectively applied for the image space of measuring the different directions lines.Square hole is used for the light-intensity variation of compensating illumination light source.TIS can measured X direction lines image space (Y, Zy), Y direction lines image space (Y, Zy).
Aberration mensuration is placed on the mask platform with binary mask, has shape to be similar to the mark of TIS on this mask.The intensive lines that the mark of measuring the coma employing is are isolated lines and measure the spherical aberration employing.Make on the TIS scanning mask mark through the projection objective imaging by the travelling workpiece platform, (zx zy), and obtains imaging offset (Δ X, Δ Y, Δ Zx, Δ Zy) with ideal position after relatively for x, y can to obtain the image space of mark.At the image space of measuring each mark on the mask under different NA and the σ, obtain the imaging offset at diverse location place in the visual field under the different lighting conditions, obtain wave aberration corresponding Z ernike coefficient after utilizing mathematical model to calculate then.But along with the development of photoetching technique, the requirement of aberration measurement speed is also improved constantly, this measuring technique can not satisfy requirement on the speed just gradually.
Summary of the invention
The object of the present invention is to provide a kind of imaging optical system aberration on-site measurement method and device,, overcome the long shortcoming of minute of the aberration of prior art existence to realize significantly improving measuring speed.
To achieve the above object, the invention provides a kind of imaging optical system aberration on-site measurement method, may further comprise the steps: the light beam that light source is sent shines in mask after adjusting through illuminator; This mask optionally sees through a part of light; The light process imaging optical system that sees through like this is with the pattern imaging on this mask; Utilize the aerial image sensor to obtain the projection objective aerial image; The aerial image that utilize to obtain with mate by the aerial image that is provided with under the specified conditions that Zernike coefficient simulation calculation draws, and calculate projection objective wave aberration according to matching result.
This mask can be a binary mask, also can be phase shifting mask.This phase shifting mask can be alternating phase-shift mask, attenuated phase-shifting mask, chromium-free phase-shift mask, can also be other phase shifting masks.
This pattern is made of one or several three-way lines, two-wire lines, multi-thread lines or contact hole.
This light source can be mercury lamp or excimer laser.
This light source can be ultraviolet source, deep ultraviolet light source or extreme ultraviolet light source.
This wave aberration comprises one or more in coma, spherical aberration, astigmatism, the three ripple differences.
Aerial image under the specified conditions that aerial image that this utilization obtains and simulation calculation draw mates, and calculate the method for projection objective wave aberration according to matching result, it can be the aerial image of measuring under the different emergent pupil face of imaging optical system place's light distribution condition, aerial image under the corresponding conditions that draws with simulation calculation mates respectively, and calculates projection objective wave aberration according to matching result.The light distribution at this imaging optical system emergent pupil face place can use the mask of the mark that comprises the different characteristic size and shape to realize as this mask, and this characteristic dimension comprises size, the spacing of each ingredient in the mark.The light distribution at this imaging optical system emergent pupil face place can use the change numerical aperture of objective to realize.The light distribution at this imaging optical system emergent pupil face place can also realize that this lighting system can be a traditional lighting by changing illumination section coherence factor or lighting system, can be ring illumination, secondary illumination or level Four illumination.
Imaging optical system aberration on-site measurement method of the present invention and device by measuring the projection lens of lithography machine aerial image that the particular mask mark is become, obtain the projection objective aberration by the projection lens of lithography machine aerial image is analyzed.This method can significantly improve measuring speed with respect to existing method, overcomes the long shortcoming of minute of the aberration of prior art existence.TAMIS measures the wave aberration method need be provided with measurement imaging offset down, about about 4 hours consuming time 10 different illuminations.Because the data that this measuring method adopts are raw data, therefore kept the big as far as possible quantity of information that TIS measures, therefore adopt this method only need measurement space picture down be set usually in the illumination of 1-3 kind, consuming time only is 10% to 30% of TAMIS technology.Experimental result shows, uses under the situation of same system, and the repeatable accuracy that this method is measured spherical aberration and coma is 2nm, and is identical with TAMIS measurement repeatable accuracy substantially.
Description of drawings
Fig. 1 is an exposure device structural representation of the present invention;
Fig. 2 is desirable projection objective aerial image;
Fig. 3 a and Fig. 3 b are the projection objective aerial image that image-position sensor records.
In the accompanying drawing: LS, light source; IL, illuminator; PL, imaging optical system; R, mask; RS, mask platform; W, silicon chip; WS, work stage; TIS, image-position sensor.
Embodiment
Further specify the present invention below in conjunction with accompanying drawing and embodiment.
As shown in Figure 1, system used in the present invention comprises: the light source LS that produces projected light beam; Be used to adjust the light distribution of the light beam that described light source sends and the illuminator IL of partial coherence factor; The imaging optical system PL that mask pattern imaging and its numerical aperture can be able to be regulated; Can carry described mask R and pinpoint mask platform RS; Can carry silicon chip W and pinpoint work stage WS; Be installed in the image-position sensor TIS of the measurement markers image space on the described work stage WS.
Aberration field measuring method for imaging optical system of photoetching apparatus of the present invention may further comprise the steps: after the light beam that described mercury lamp or excimer laser LS are sent is adjusted through illuminator IL, shine in mask R; Mask R optionally sees through a part of light; The light process imaging optical system PL that sees through is with the pattern imaging on the mask; By using TIS to measure the aerial image that special pattern became on the mask; Can measure the aerial image under one or more groups pupil light distribution situation, then use special algorithm to calculate various wave aberrations.
The wave aberration of projection objective is meant actual wavefront and the optical path difference of desirable wavefront on object lens emergent pupil face.Wave aberration can be decomposed into the polynomial form of Zernike,
w(ρ，θ)＝Z
1+Z
2·ρcosθ+Z
3·ρsinθ+Z
4·(2ρ
2-1)+Z
5·ρ
2cos2θ+Z
6·ρ
2sin2θ+Z
7(3ρ
3-2ρ)cosθ+Z
8(3ρ
3-2ρ)sinθ+Z
9·(6ρ
4-6ρ
4+1)+……
Wherein ρ and θ are the normalization polar coordinates on the emergent pupil face.Z
2With Z
3Item characterizes wavetilt.Z
4Item characterizes focal plane shift, Z
5With Z
6Item characterizes three rank astigmatisms, Z
7Characterize three rank comas of directions X, Z
8Characterize three rank comas of Y direction, Z
9Characterize three rank spherical aberrations.
According to the influence of aberration to image quality, can be with Z
5Above aberration is divided into two parts.ρ and 2n θ in the Zernike polynomial expression (n=0,1,2, the aberration of function correspondence 3...), it is poor to be called idol.The idol difference mainly comprises astigmatism (Z
5, Z
6, Z
12, Z
13) and spherical aberration (Z
9, Z
16) etc.The idol difference mainly influences the Z of aerial image to (axially) position.The corresponding aberration of function of ρ and (2n+1) θ is called strange aberration in the Zernike polynomial expression.Strange aberration mainly comprises coma (Z
7, Z
8, Z
14, Z
15) and the poor (Z of three ripples
10, Z
16) etc.Strange aberration mainly influences (vertical) position and the light distribution of aerial image in the XY plane.
For example, for isolated lines, desirable projection objective imaging light distribution as shown in Figure 2, transverse axis is the horizontal direction in the litho machine coordinate system among the figure, the longitudinal axis is the vertical direction in the litho machine coordinate system.The projection objective imaging light distribution that image-position sensor measures is shown in Fig. 3 a.By comparison to two width of cloth images, emulation is obtained the algorithm that image adopts the iteration optimizing, can obtain simulation result such as Fig. 3 b under the immediate specified conditions of aerial image.This moment, the wave aberration of Fig. 3 b was the wave aberration that need find the solution.
Concrete algorithm steps can be:
1, utilize certain lighting condition of aerial image sensor measurement and projection objective numerical aperture that the aerial image of a certain special pattern is set under the situation.
2, set the projection objective wave aberration initial value, this initial value can be the off-line calibration result of wave aberration of photo-etching machine projection objective, perhaps is 0.
3, utilize lithography simulation software (as Prolith, SOLID-C etc.) to calculate the aerial image of the special pattern that the aerial image sensor of certain Zernike coefficient under being provided with record
4, in lithography simulation software, change certain individual event Zernike coefficient wave aberration, calculate the aerial image under this condition.Obtain the derivative relation of aerial image and every Zernike index variation.
5, calculate the aerial image that present emulation obtains and record difference between the aerial image.Surpass tolerance limit as difference,, change the setting of Zernike coefficient, the action of repeating step 3-5 according to the aerial image and the derivative relation of every Zernike index variation that the 4th step calculated.Less than tolerance limit, then Ci Shi every Zernike coefficient is projection objective wave aberration as difference.
In the computation process, can adopt multiple optimized Algorithm such as method of conjugate gradient, annealing algorithm to carry out wave aberration and calculate, utilize said method to measure the projection objective wave aberration measuring accuracy at present and can reach 2nm.
Be another kind of concrete algorithm steps below:
1, utilize certain lighting condition of aerial image sensor measurement and projection objective numerical aperture that the aerial image of a plurality of different special patterns is set under the situation.
2, set the projection objective wave aberration initial value, this initial value can be the off-line calibration result of wave aberration of photo-etching machine projection objective, perhaps is 0.
3, utilize lithography simulation software (as Prolith, SOLID-C etc.) to calculate the aerial image of a plurality of different special patterns that the aerial image sensor of certain Zernike coefficient under being provided with record
4, in lithography simulation software, change certain individual event Zernike coefficient wave aberration, calculate the aerial image under this condition.Obtain the derivative relation of a plurality of different spaces pictures and every Zernike index variation.
5, calculate the aerial image that present emulation obtains and record difference between the aerial image.Surpass tolerance limit as difference,, change the setting of Zernike coefficient, the action of repeating step 3-5 according to the aerial image and the derivative relation of every Zernike index variation that the 4th step calculated.Less than tolerance limit, then Ci Shi every Zernike coefficient is projection objective wave aberration as difference.
A kind of attainable concrete algorithm steps also is provided below:
1, utilize multiple lighting condition of aerial image sensor measurement and projection objective numerical aperture that the aerial image of a plurality of different special patterns is set under the situation.
2, set the projection objective wave aberration initial value, this initial value can be the off-line calibration result of wave aberration of photo-etching machine projection objective, perhaps is 0.
3, utilize lithography simulation software (as Prolith, SOLID-C etc.) to calculate the aerial image of a plurality of different special patterns that the aerial image sensor of certain Zernike coefficient under being provided with record
4, in lithography simulation software, change certain individual event Zernike coefficient wave aberration, calculate the aerial image under this condition.Obtain the derivative relation of a plurality of different spaces pictures and every Zernike index variation.
5, calculate the aerial image that present emulation obtains and record difference between the aerial image.Surpass tolerance limit as difference,, change the setting of Zernike coefficient, the action of repeating step 3-5 according to the aerial image and the derivative relation of every Zernike index variation that the 4th step calculated.Less than tolerance limit, then Ci Shi every Zernike coefficient is projection objective wave aberration as difference.
Claims (13)
1. an imaging optical system aberration on-site measurement method is characterized in that, may further comprise the steps: the light beam that light source is sent shines in mask after adjusting through illuminator; Described mask optionally sees through a part of light; The light process imaging optical system that sees through like this is with the pattern imaging on the described mask; Utilize the aerial image sensor to obtain the projection objective aerial image; The aerial image that utilize to obtain with mate by the aerial image that is provided with under the specified conditions that Zernike coefficient simulation calculation draws, and calculate projection objective wave aberration according to matching result.
2. imaging optical system aberration on-site measurement method according to claim 1 is characterized in that described mask is binary mask or phase shifting mask.
3. imaging optical system aberration on-site measurement method according to claim 2 is characterized in that, described phase shifting mask is alternating phase-shift mask, attenuated phase-shifting mask or chromium-free phase-shift mask.
4. imaging optical system aberration on-site measurement method according to claim 1 is characterized in that, described pattern is made of one or several three-way lines, two-wire lines, multi-thread lines or contact hole.
5. imaging optical system aberration on-site measurement method according to claim 1 is characterized in that described light source is mercury lamp or excimer laser.
6. imaging optical system aberration on-site measurement method according to claim 1 is characterized in that, described light source is ultraviolet source or deep ultraviolet light source or extreme ultraviolet light source.
7. imaging optical system aberration on-site measurement method according to claim 1 is characterized in that, described wave aberration comprises one or more in coma, spherical aberration, astigmatism, the three ripple differences.
8. imaging optical system aberration on-site measurement method according to claim 1, it is characterized in that, aerial image under the specified conditions that aerial image that described utilization obtains and simulation calculation draw mates, and be: measure the aerial image under the light distribution at the different emergent pupil face of imaging optical system place according to the method that matching result calculates projection objective wave aberration, aerial image under the corresponding conditions that draws with simulation calculation mates respectively, and calculates projection objective wave aberration according to matching result.
9. imaging optical system aberration on-site measurement method according to claim 8 is characterized in that, the light distribution at described imaging optical system emergent pupil face place comprises that by use the mask of the mark of different characteristic size and shape realizes as described mask.
10. imaging optical system aberration on-site measurement method according to claim 9 is characterized in that described characteristic dimension comprises size, the spacing of each ingredient in the mark.
11. imaging optical system aberration on-site measurement method according to claim 8 is characterized in that, the light distribution at described imaging optical system emergent pupil face place realizes by changing numerical aperture of objective.
12. imaging optical system aberration on-site measurement method according to claim 8 is characterized in that, the light distribution at described imaging optical system emergent pupil face place realizes by changing illumination section coherence factor or lighting system.
13. the described imaging optical system aberration of claim 12 on-site measurement method is characterized in that, described lighting system is traditional lighting, ring illumination, secondary illumination or level Four illumination.
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| CN102298273A (en) * | 2011-08-25 | 2011-12-28 | 中国科学院上海光学精密机械研究所 | Aerial image sensor angle response measurement method based on two-pole illumination |
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| CN101655670B (en) * | 2009-09-22 | 2011-01-05 | 北京理工大学 | On-line detection device with function of calibrating systematic error for wave aberration of projection objective of photoetching machine |
| CN102129173B (en) * | 2010-01-12 | 2015-02-11 | 上海微电子装备有限公司 | Photoetching machine projection objective lens wave aberration field measurement method |
| CN102253607B (en) * | 2011-08-15 | 2012-10-10 | 北京理工大学 | Method for optimizing coherent factor of photoetching machine lighting system |
| CN102854757B (en) * | 2012-08-23 | 2015-08-12 | 中国科学院上海光学精密机械研究所 | Based on projection objective wave aberration detection system and the method for aerial image linear fit |
| CN103048894B (en) * | 2013-01-29 | 2014-10-15 | 中国科学院光电研究院 | Photoetching machine projection lens wave aberration on-line measuring device and method |
| CN103744269B (en) * | 2014-01-03 | 2015-07-29 | 中国科学院上海光学精密机械研究所 | The detection method of wave aberration of photoetching projection objective and imaging optimal focal plane |
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