CN104483537B - Low-voltage detection circuit with temperature-compensating - Google Patents
Low-voltage detection circuit with temperature-compensating Download PDFInfo
- Publication number
- CN104483537B CN104483537B CN201410637163.0A CN201410637163A CN104483537B CN 104483537 B CN104483537 B CN 104483537B CN 201410637163 A CN201410637163 A CN 201410637163A CN 104483537 B CN104483537 B CN 104483537B
- Authority
- CN
- China
- Prior art keywords
- voltage
- resistance
- temperature coefficient
- low
- detection circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Measurement Of Current Or Voltage (AREA)
Abstract
The invention discloses a kind of low-voltage detection circuit with temperature-compensating, the low-voltage detection circuit includes a voltage comparator, is formed by some PMOSs and NMOS tube concatenation, and constitute a turn threshold voltage；One voltage input end, accesses above-mentioned PMOS and the grid of NMOS tube, a comparator output terminal, according to voltage input end and turn threshold voltage output logical signal；One resitstance voltage divider, at least two series resistances, one of resistance one terminates supply voltage, and one end of another resistance is grounded, and the common point of two resistance is partial pressure output end, exports branch pressure voltage；The resitstance voltage divider includes two kinds of both positive and negative temperature coefficient of resistance, and the branch pressure voltage of resitstance voltage divider is had and voltage comparator turn threshold voltage temperature coefficient symbol identical temperature coefficient.
Description
Technical field
The invention belongs to technical field of integrated circuits, more particularly to a kind of low-voltage testing circuit of integrated circuit.
Background technology
Low-voltage detection circuit (LVD) is widely used in the detecting system supply voltage on piece, when supply voltage is less than safety
, can be with output control signal, for early warning or reset system to ensure safety that system works during voltage.In order to save area
And power consumption, the single input class constituted using multiple PMOS PM1~PM3 and NMOS tube NM1~NM2 cascaded structures more than current LVD
The voltage comparator VCMP1 of reverser structure, its turn threshold voltage VTH1 is determined by the ratio of PMOS and NMOS tube；Input
Voltage is the voltage that supply voltage passes through after partial pressure in proportion, for example with resistance string partial-pressure structure, divider resistance R1 and R2,
Voltage VDDH=VDD*R2/ (R1+R2) after partial pressure.When VDDH is more than VTH1, voltage comparator VCMP1 outputs LVDO is low electricity
It is flat, work as VDDH<During VTH1, LVDO is high level.Therefore, corresponding supply voltage detection threshold value is during LVDO logic inversions
VTH1* (1+R1/R2), R1, R2 are same upper resistance.But, because VTH1 is varied with temperature, for example VTH1 has one
Individual negative temperature coefficient so that corresponding supply voltage VDD detection threshold values also have a negative temperature coefficient when LVDO is overturn, and cause height
When warm, supply voltage detection threshold value is small, during low temperature, and supply voltage detection threshold value is big, and this is for ensureing that logic circuit is normal
It is unfavorable for running.
And VCMP1 is voltage comparator, input voltage is that the partial pressure for constituting resitstance voltage divider by R1, R2 resistance exports electricity
VDDH is pressed, logical signal LVDO is output as.Voltage comparator VCMP1 threshold voltage is VTH1, when VDDH is more than VTH1,
LVDO=0, when VDDH is less than VTH1, LVDO=1；Supply voltage detection threshold value VDDTH1 is VTH1* (1+R1/R2).Logical
VTH1 has a negative temperature coefficient in normal technique, and R1 and R2 are same type of resistance, such as NWELL resistance, therefore
VDDTH1 also has a negative temperature coefficient.On the one hand it is that VDDTH1 is varied with temperature greatly that this caused consequence is, is reduced low
The precision and stability of voltage detecting circuit；On the other hand, VDDTH1 negative temperature coefficient compromises low-voltage detection circuit pair
The forewarning function of other circuit operation intervals on piece.For example, Digital Logical Circuits is in high temperature, generally its delay becomes big so that
When about upper setup time fault risk increase, now Digital Logical Circuits minimum need improve just can guarantee that just
Often safely work；But if low-voltage detection circuit is in high temperature, its supply voltage detection threshold value is reduced on the contrary, then equivalent to
Reduce the early warning value of the minimum safe operating voltage of Digital Logical Circuits, thus do not have timely early warning power supply voltage whether
The interval effect of safe voltage.
The content of the invention
In order to improve the precision and stability of low-voltage detection circuit work, logic circuit normal work is better ensured that,
It is necessary to reduce low-voltage detection circuit supply voltage detection threshold value variation with temperature, temperature benefit is done to low-voltage detection circuit
Repay, therefore the primary and foremost purpose of the present invention is to provide a kind of low-voltage detection circuit with temperature-compensating.
It is another object of the present invention to provide a kind of low-voltage detection circuit with temperature-compensating, the low voltage test
Circuit can avoid detecting that voltage threshold level varies with temperature excessive adverse effect in common technical scheme, and realize letter
Just, it is with low cost.
To achieve the above object, the technical scheme is that：
A kind of low-voltage detection circuit with temperature-compensating, the low-voltage detection circuit includes a voltage comparator, by
Some PMOS and NMOS tube concatenations are formed, and constitute a turn threshold voltage；It is characterized in that have a voltage input end,
Pressure-dividing output voltage of the voltage input end through resitstance voltage divider is connected to above-mentioned PMOS and the grid of NMOS tube, in addition to an electricity
Comparator output terminal is pressed, according to pressure-dividing output voltage and turn threshold voltage output logical signal；Also include an electric resistance partial pressure
Device, at least two series resistances of the resitstance voltage divider, one of resistance one terminates supply voltage, the one of another resistance
End ground connection, the common point of two resistance is partial pressure output end, exports pressure-dividing output voltage；Resitstance voltage divider partial pressure output termination electricity
The voltage input end of comparator is pressed, at least two series resistances of the resitstance voltage divider include positive temperature coefficient resistor and subzero temperature
Coefficient resistance is spent, and the pressure-dividing output voltage of resitstance voltage divider is had and voltage comparator turn threshold voltage temperature coefficient
Symbol identical temperature coefficient.
The voltage comparator turn threshold voltage has negative temperature coefficient, and resitstance voltage divider is made up of two resistance, its
In the resistance of a termination supply voltage there is positive temperature coefficient, and the resistance of one end ground connection has negative temperature coefficient.
Further, the voltage comparator turn threshold voltage has a negative temperature coefficient, resitstance voltage divider by two kinds not
Same type resistance is constituted, and each type resistance has two, totally four resistance, and four resistance are sequentially connected in series, and two of which has just
Temperature coefficient, two have negative temperature coefficient, and four resistance separately constitute two groups of resistance combinations, wherein each combination includes one
Individual negative temperature coefficient resister and a positive temperature coefficient resistor.
Low-voltage detection circuit can have multiple voltage comparators, the voltage input end connecting resistance of each voltage comparator
The partial pressure output end of divider, and each voltage comparator has different turn threshold voltages, to carry out multiple voltage detectings.
Preferably, above-mentioned negative temperature coefficient resister uses HRPOLY resistance, and positive temperature coefficient resistor uses NWELL resistance.
The low-voltage detection circuit that the present invention is realized, can avoid detecting voltage threshold level in common technical scheme
Excessive adverse effect is varied with temperature, the precision and stability of low voltage test is improved, other electricity can be preferably protected
The normal work on road.And simplicity is realized, it is with low cost.
Brief description of the drawings
The circuit diagram of Fig. 1 embodiment of the present invention one.
The circuit diagram of Fig. 2 embodiment of the present invention two.
Embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, it is right below in conjunction with drawings and Examples
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.
The preferred embodiment 1 of the low-voltage detection circuit of the present invention with temperature-compensating is shown referring to accompanying drawing 1 ---
Low-voltage detection circuit 200 with temperature-compensating, including voltage comparator VCMP2, and by distinct symbols temperature coefficient
Resistance R21 and R22 composition resitstance voltage divider constitute；The pressure-dividing output voltage VDDH2 of resitstance voltage divider is connected to voltage ratio
Compared with device VCMP2 voltage input end, VCMP2 output signal is LVDO2.Voltage comparator VCMP2 is by being sequentially connected in series in power supply
PMOS PM21~PM23 between VDD and ground, and NMOS tube NM21~NM22 compositions, by setting certain PMOS and
The breadth length ratio of NMOS tube can obtain predetermined threshold V T H2；Resistance R21 uses NWELL resistance, tool in resitstance voltage divider
There is positive temperature coefficient, resistance R22 uses HRPOLY resistance, with negative temperature coefficient, therefore R21/R22 has a positive temperature system
Number.From electric circuit knowledge, supply voltage detection threshold value VDDTH2=VTH2* (1+R21/R22), therefore VDDTH2 have one
The negative temperature coefficient smaller than VDDTH1 absolute value, either zero-temperature coefficient or positive temperature coefficient, depending on two kinds in technique
The temperature coefficient of type resistance in itself.In a word, the low-voltage detection circuit 200 with temperature-compensating optimizes supply voltage detection threshold
It is worth variation with temperature, can works with preferably protecting other circuit safeties.
The preferred embodiment 2 of the low-voltage detection circuit of the present invention with temperature-compensating is shown referring to accompanying drawing 2 ---
Low-voltage detection circuit 300 with temperature-compensating, including two voltage comparators VCMP3, VCMP4, and by different symbols
The resitstance voltage divider that resistance R32a, R31b, R33a, R34b of number temperature coefficient are composed in series is constituted；The partial pressure of resitstance voltage divider
Output voltage VDDH3 is connected to voltage comparator VCMP3 voltage input end, and VCMP3 output signal is LVDO3；Resistance point
The pressure-dividing output voltage VDDH3 of depressor is also connected to voltage comparator VCMP4 voltage input end, VCMP4 output letter simultaneously
Number be LVDO4.Voltage comparator VCMP3 by PMOS PM31~PM33 for being sequentially connected in series between power vd D and ground, and
NMOS tube NM31~NM32 compositions, by setting, the breadth length ratio of certain PMOS and NMOS tube can obtain predetermined threshold value electricity
Press VTH3；Voltage comparator VCMP4 is by PMOS PM41~PM43 for being sequentially connected in series between power vd D and ground, and NMOS
Pipe NM41~NM42 compositions, by setting, the breadth length ratio of certain PMOS and NMOS tube can obtain predetermined threshold voltage
VTH4；VTH3 is different with VTH4, therefore the low-voltage detection circuit 300 can provide two supply voltage detection threshold values.Resistance
In divider, R32a, R31b, R33a, R34b are sequentially connected in series, the termination powers of R32a mono-, R34b one end ground connection；R31b's and R33a
Points of common connection is partial pressure output end, output branch pressure voltage VDDH3.R32a, R33a are HRPOLY resistance, with negative temperature system
Number, R31b, R34b are NWELL resistance, with positive temperature coefficient.R32a and R31b constitutes one group, and R33a and R34b constitute one group,
From electric circuit knowledge, LVDO3 exports corresponding supply voltage detection threshold value
VDDTH3=VTH3* (1+ (R32a+R31b)/(R33a+R34b)),
LVDO4 exports corresponding supply voltage detection threshold value
VDDTH4=VTH4* (1+ (R32a+R31b)/(R33a+R34b))；
Adjust R32a and R31b, and R33a and R34b relative scale, (R32a+R31b)/(R33a+ can be adjusted
R34b temperature coefficient) is positive temperature coefficient, and causes supply voltage detection threshold value VDDTH3 and VDDTH4 to have one appropriately
Positive temperature coefficient.In a word, the low-voltage detection circuit 300 with temperature-compensating optimizes supply voltage detection threshold value with temperature
Change, improves the stability of power supply low voltage test, can work with preferably protecting other circuit safeties.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
Any modifications, equivalent substitutions and improvements made within refreshing and principle etc., should be included in the scope of the protection.
Claims (5)
1. a kind of low-voltage detection circuit with temperature-compensating, the low-voltage detection circuit includes a voltage comparator, if by
Dry PMOS and NMOS tube concatenation is formed, and constitutes a turn threshold voltage；It is characterized in that have a voltage input end, electricity
Pressure pressure-dividing output voltage of the input through resitstance voltage divider is connected to above-mentioned PMOS and the grid of NMOS tube, in addition to a voltage
Comparator output terminal, according to pressure-dividing output voltage and turn threshold voltage output logical signal；Also include a resitstance voltage divider,
At least two series resistances of the resitstance voltage divider, one of resistance one terminates supply voltage, one end of another resistance
Ground connection, the common point of two resistance is partial pressure output end, exports pressure-dividing output voltage；Resitstance voltage divider partial pressure exports termination voltage
The voltage input end of comparator, at least two series resistances of the resitstance voltage divider include positive temperature coefficient resistor and negative temperature
Coefficient resistance, and the pressure-dividing output voltage of resitstance voltage divider is had and voltage comparator turn threshold voltage temperature coefficient symbol
Number identical temperature coefficient.
2. the low-voltage detection circuit as claimed in claim 1 with temperature-compensating, it is characterised in that the voltage comparator is turned over
Turning threshold voltage has negative temperature coefficient, and resitstance voltage divider is made up of two resistance, wherein the resistance tool of a termination supply voltage
There is positive temperature coefficient, and the resistance of one end ground connection has negative temperature coefficient.
3. the low-voltage detection circuit as claimed in claim 2 with temperature-compensating, it is characterised in that the voltage comparator is turned over
Turning threshold voltage has negative temperature coefficient, and resitstance voltage divider is made up of two kinds of different type resistance, and each type resistance has two,
Totally four resistance, four resistance are sequentially connected in series, and two of which has positive temperature coefficient, and two have negative temperature coefficient, four electricity
Resistance separately constitutes two groups of resistance combinations, wherein each combination includes a negative temperature coefficient resister and a positive temperature coefficient electricity
Resistance.
4. the low-voltage detection circuit as claimed in claim 1 with temperature-compensating, it is characterised in that low-voltage detection circuit can
With two or more voltage comparators, the partial pressure of the voltage input end connecting resistance divider of each voltage comparator
Output end, and each voltage comparator has different turn threshold voltages.
5. the low-voltage detection circuit as claimed in claim 1 with temperature-compensating, it is characterised in that above-mentioned negative temperature coefficient electricity
Resistance uses HRPOLY resistance, and positive temperature coefficient resistor uses NWELL resistance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410637163.0A CN104483537B (en) | 2014-11-12 | 2014-11-12 | Low-voltage detection circuit with temperature-compensating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410637163.0A CN104483537B (en) | 2014-11-12 | 2014-11-12 | Low-voltage detection circuit with temperature-compensating |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104483537A CN104483537A (en) | 2015-04-01 |
| CN104483537B true CN104483537B (en) | 2017-10-31 |
Family
ID=52758102
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410637163.0A Active CN104483537B (en) | 2014-11-12 | 2014-11-12 | Low-voltage detection circuit with temperature-compensating |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104483537B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105021865B (en) * | 2015-06-04 | 2017-12-01 | 深圳市芯海科技有限公司 | A kind of compensable voltage measurement method |
| CN106569133A (en) * | 2015-10-13 | 2017-04-19 | 海洋王（东莞）照明科技有限公司 | Low voltage alarm circuit |
| CN206432702U (en) * | 2016-11-30 | 2017-08-22 | 比亚迪股份有限公司 | Electrokinetic cell overcharge protection circuit, device, battery management system and electric automobile |
| CN108112135B (en) * | 2018-01-26 | 2023-10-27 | 广州汗马电子科技有限公司 | LED lamp and power supply circuit thereof |
| CN118366529A (en) * | 2023-01-12 | 2024-07-19 | 长鑫存储技术有限公司 | Power-on monitoring circuit and memory |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1534302A (en) * | 2003-04-02 | 2004-10-06 | ��ķ�ɷ�����˾ | Voltage detecting circuit |
| CN1635383A (en) * | 2003-12-30 | 2005-07-06 | 上海贝岭股份有限公司 | Low power consumption and low temperature drift voltage detection circuit independent from technique |
| CN101408564A (en) * | 2008-11-18 | 2009-04-15 | 上海贝岭矽创微电子有限公司 | Voltage detection circuit |
| CN101930020A (en) * | 2009-06-26 | 2010-12-29 | 上海英联电子科技有限公司 | Power supply voltage detection circuit with ultra-low power consumption |
| CN201774453U (en) * | 2010-08-26 | 2011-03-23 | Bcd半导体制造有限公司 | Power supply voltage detection circuit of switching power supply |
| CN102830271A (en) * | 2011-06-15 | 2012-12-19 | 联咏科技股份有限公司 | Voltage detecting method and voltage detecting circuit |
| CN103604975A (en) * | 2013-11-18 | 2014-02-26 | 同济大学 | An anti-interference low-voltage detection circuit |
| CN104062482A (en) * | 2013-03-22 | 2014-09-24 | 艾默生电气公司 | Power voltage measuring device, temperature detecting device comprising same, and temperature controller |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012117912A (en) * | 2010-11-30 | 2012-06-21 | Toshiba Corp | Power supply voltage detection circuit |
-
2014
- 2014-11-12 CN CN201410637163.0A patent/CN104483537B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1534302A (en) * | 2003-04-02 | 2004-10-06 | ��ķ�ɷ�����˾ | Voltage detecting circuit |
| CN1635383A (en) * | 2003-12-30 | 2005-07-06 | 上海贝岭股份有限公司 | Low power consumption and low temperature drift voltage detection circuit independent from technique |
| CN101408564A (en) * | 2008-11-18 | 2009-04-15 | 上海贝岭矽创微电子有限公司 | Voltage detection circuit |
| CN101930020A (en) * | 2009-06-26 | 2010-12-29 | 上海英联电子科技有限公司 | Power supply voltage detection circuit with ultra-low power consumption |
| CN201774453U (en) * | 2010-08-26 | 2011-03-23 | Bcd半导体制造有限公司 | Power supply voltage detection circuit of switching power supply |
| CN102830271A (en) * | 2011-06-15 | 2012-12-19 | 联咏科技股份有限公司 | Voltage detecting method and voltage detecting circuit |
| CN104062482A (en) * | 2013-03-22 | 2014-09-24 | 艾默生电气公司 | Power voltage measuring device, temperature detecting device comprising same, and temperature controller |
| CN103604975A (en) * | 2013-11-18 | 2014-02-26 | 同济大学 | An anti-interference low-voltage detection circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104483537A (en) | 2015-04-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104483537B (en) | Low-voltage detection circuit with temperature-compensating | |
| CN104967095B (en) | Thermal-shutdown circuit | |
| CN104579263A (en) | Reset circuit with high response speed and low temperature coefficient | |
| CN209803597U (en) | Control circuit for improving detection precision of NTC thermistor and electronic equipment | |
| CN102147295A (en) | Temperature sensor based on magnetic tunnel junction component | |
| CN110703010A (en) | Test circuit | |
| CN104967094A (en) | Over-temperature protection circuit | |
| CN104218533A (en) | Power input overvoltage turn-off protection circuit | |
| CN205544930U (en) | Take USB power supply switch circuit of protection circuit | |
| CN110132444B (en) | Temperature detection circuit | |
| CN106921371B (en) | Low-power-consumption power-on reset circuit | |
| CN203554401U (en) | Reset circuit with high responding speed and low temperature coefficients | |
| CN104300949A (en) | Low-voltage resetting circuit for radio frequency chip of internet of things | |
| US8767365B2 (en) | Protection circuit | |
| CN107342757B (en) | Power-on reset circuit based on improved band-gap reference structure | |
| CN108089627B (en) | Reference voltage buffer circuit | |
| CN105004900A (en) | Power supply voltage monitoring circuit, and electronic circuit including the power supply voltage monitoring circuit | |
| CN105490247B (en) | A kind of thermal-shutdown circuit | |
| CN205375228U (en) | Ageing quick -witted control by temperature change circuit | |
| WO2021135661A1 (en) | Power-down detection circuit | |
| CN103105885B (en) | Circuit producing reference voltage of high voltage | |
| CN215728408U (en) | Novel high-precision comparator circuit | |
| CN205231203U (en) | Current detecting circuit | |
| CN104897949A (en) | Voltage detection circuit | |
| CN208797555U (en) | Overcurrent protection circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: 518000, A building, block 9, garden city digital garden, 1079 Nanhai Road, Guangdong, Shenzhen, Nanshan District Patentee after: Chipsea Technology (Shenzhen) Co., Ltd. Address before: 518067 Nanshan District, Shenzhen, Nanhai Avenue, garden city, No. 1079, building A, block, floor 9 Patentee before: Xinhai Science and Technology Co., Ltd., Shenzhen City |
|
| CP03 | Change of name, title or address |