CN104465815A - 多晶硅太阳能电池片 - Google Patents
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Abstract
本发明公开了一种多晶硅太阳能电池片，包括多晶硅片和若干相互平行的细栅线；所述多晶硅片包括若干晶粒，各晶粒贯穿于多晶硅片上下表面，相邻晶粒间形成吸收位错的晶界。本发明对多晶硅片晶粒的形状和布局进行优化选择，使得晶界的布局得到优化，特别是多晶硅片表面的晶界与细栅线形成一定的配合，使电子在垂直硅片表面的纵向方向，和在沿硅片表面向细栅线横向传输的方向，都尽量少地跨越晶界，减少电子因晶界而导致的复合；同时，多晶硅片适度引入晶界，可以吸收硅片体内的位错和杂质，使得晶粒内部相对洁净，提高了硅片的少子寿命，减少因位错而导致的复合，最终显著提高电池的转化效率。
Description
技术领域
本发明涉及太阳能电池技术领域，具体涉及一种多晶硅太阳能电池片。
背景技术
目前在太阳电池市场中，晶体硅电池一直占据绝对多数的市场份额。而晶硅电池中的多晶电池，由于综合制造成本低，其份额已大大超越单晶电池。但是，由于硅片上晶粒取向杂乱，只能使用酸制绒技术，导致多晶硅片制绒后反射率较高；同时，由于硅片内部晶界对光生载流子有很高的复合率，这两方面原因显著降低了多晶电池的效率。特别是晶界高复合率的原因，导致现有的一些先进的电池技术很难应用于多晶电池上。因此，改善晶界对电池光生载流子的复合，成为提升多晶电池效率的核心课题之一。
改善晶界对电池光生载流子的复合，一方面可以减少晶界，例如采用的类单晶技术，但是减少了晶界后，硅片体内的位错等缺陷无法被吸收和消除，导致对载流子的复合仍然很大，对效率提升不利；另一方面，可以考虑改变晶界在硅片中分布的相对位置，以改变晶界在载流子复合中的影响程度。
一般结构的p型太阳电池在受到光照后，在电池表面和体内都会产生大量的光生电子和空穴，这两种载流子在p-n结作用下，会朝相反的方向进行传输，即电子向电池正面（重掺磷层）这一侧移动，空穴向电池背面（铝背场）一侧移动，最终分别传输到上下电极上，形成开路电压。为了能让更多的光照到电池上发电，正面银栅线只能以一定的间距（1.5-2 mm）分布于表面。因此电子传输过程中，先沿着硅片厚度方向从硅片体内向表面移动，然后沿着重掺磷层进行硅片表面横向移动，传输至收集电流作用的细栅线上。在传统的硅片中，晶界贯穿于硅片上下两个表面（从硅片两面看到的晶界形状相接近）。这种结构可以保证光生载流子在沿硅片厚度方向移动时，尽量少跨越晶界，晶界的复合较少。但是，电子在重掺磷层横向传输时，会碰到很多晶界，产生很严重的复合。
中国专利申请201310032658.6，公开了一种多晶硅太阳能电池切片方法，将硅片先横切再竖切，使得硅片晶粒延伸的方向与硅片表面方向平行，这样的多晶硅片做成电池后，只要细栅线方向与晶粒延伸方向垂直，电子在沿表面重掺层横向传输时，几乎不会跨越晶界，晶界复合很低；但是该方法在电子沿硅片厚度方向传输时必然会碰到很多晶界，产生显著的复合，电池效率不会有明显的提升。
发明内容
本发明的目的在于提供一种多晶硅太阳能电池片，其对多晶硅片晶粒的形状和布局进行优化选择，使得晶界的布局得到优化，特别是多晶硅片表面的晶界与细栅线形成一定的配合，使电子在垂直硅片表面的纵向方向，和在沿硅片表面向细栅线横向传输的方向，都尽量少地跨越晶界，减少电子因晶界而导致的复合；同时，多晶硅片适度引入晶界，可以吸收硅片体内的位错和杂质，使得晶粒内部相对洁净，提高了硅片的少子寿命，减少因位错而导致的复合，最终显著提高电池的转化效率。
为实现上述目的，本发明的技术方案是设计一种多晶硅太阳能电池片，包括多晶硅片和若干相互平行的细栅线；所述多晶硅片包括若干晶粒，各晶粒贯穿于多晶硅片上下表面，相邻晶粒间形成吸收位错的晶界；上述晶粒在多晶硅片表面的截面形成晶粒截面，所述晶粒截面在细栅线上的投影长度为栅线投影长度，所述晶粒截面在细栅线垂直方向上的投影长度为垂直栅线投影长度，上述栅线投影长度为2～20mm，垂直栅线投影长度为4～156mm，且栅线投影长度与垂直栅线投影长度的比值小于等于1/2。
优选的，所述晶粒截面的总面积占硅片表面面积的40%以上。
优选的，所述栅线投影长度为4～20mm，垂直栅线投影长度为12～100mm，且栅线投影长度与垂直栅线投影长度的比值小于等于1/3。
优选的，所述晶粒截面为狭长形，其栅线投影长度为5～20mm，垂直栅线投影长度为20～90mm，且栅线投影长度与垂直栅线投影长度的比值小于等于1/4；所述狭长形晶粒截面的总面积占硅片表面面积的40%以上。
优选的，所述晶粒截面为长方形，长边垂直于细栅线，长度为25～80mm，短边平行于细栅线，长度为5～15mm,且短边与长边的比值小于等于1/5；所述长方形晶粒截面的总面积占硅片表面面积的40%以上。
本发明多晶硅太阳能电池片，其多晶硅片晶粒和晶界贯穿于硅片上下表面，保证了光生载流子在沿硅片厚度方向移动时，尽可能少的跨越晶界，减少电子因晶界而导致的复合；为了使电子在沿表面重掺层横向传输方向也尽可能少的跨越晶界，本发明通过大量创造性实验，对多晶硅片上的晶粒形状和布局进行优化，使得晶界的布局得到优化，特别是多晶硅片表面的晶界与细栅线形成一定的配合；本发明晶粒截面的栅线投影长度为2～20mm，垂直栅线投影长度为4～156mm，栅线投影长度与垂直栅线投影长度的比值小于等于1/2，而细栅线间隔一般只有2mm左右，这使得在多晶硅片表面，电子在重掺磷层横向传输的方向（即垂直栅线方向）移动时，遇到晶界的可能被尽量减少，产生电子与空穴复合的机会大大降低；同时，晶粒截面的栅线投影长度为2～20mm，也使得在平行细栅线方向上，多晶硅片保留了一定数量的不阻碍电子走向的晶界，且晶界密度不至于过大，可以吸收硅片体内的位错和杂质，使得晶粒内部相对洁净，提高了硅片的少子寿；以上两个方面配合起来，能够提高电池的短路电流和填充因子，从而显著提高电池的转化效率。
附图说明
图1是本发明实施例1的示意图。
图2是本发明实施例4的示意图。
具体实施方式
下面结合附图和实施例，对本发明的具体实施方式作进一步描述。以下实施例仅用于更加清楚地说明本发明的技术方案，而不能以此来限制本发明的保护范围。
本发明具体实施的技术方案是：
实施例1
如图1所示，一种多晶硅太阳能电池片，包括多晶硅片1和若干相互平行的细栅线2；所述多晶硅片1包括若干晶粒，各晶粒贯穿于多晶硅片1上下表面，相邻晶粒间形成吸收位错的晶界；上述晶粒在多晶硅片1表面的截面形成晶粒截面3，所述晶粒截面3为狭长形，所述晶粒截面3在细栅线2上的投影长度为栅线投影长度，所述晶粒截面3在细栅线2垂直方向上的投影长度为垂直栅线投影长度，上述栅线投影长度为2～20mm，垂直栅线投影长度为4～156mm，且栅线投影长度与垂直栅线投影长度的比值小于等于1/2；所述狭长形晶粒截面3的总面积占硅片表面面积的40%以上。
实施例2
在实施例1的基础上，区别为：栅线投影长度为4～20mm，垂直栅线投影长度为12～100mm，且栅线投影长度与垂直栅线投影长度的比值小于等于1/3；所述狭长形晶粒截面3的总面积占硅片表面面积的50%以上。
实施例3
在实施例1的基础上，区别为：其栅线投影长度为5～20mm，垂直栅线投影长度为20～90mm，且栅线投影长度与垂直栅线投影长度的比值小于等于1/4；所述狭长形晶粒截面3的总面积占硅片表面面积的60%以上。
实施例4
如图2所示，一种多晶硅太阳能电池片，包括多晶硅片10和若干相互平行的细栅线20；所述多晶硅片10包括若干晶粒，各晶粒贯穿于多晶硅片10上下表面，相邻晶粒间形成吸收位错的晶界；上述晶粒在多晶硅片10表面的截面形成晶粒截面30，所述晶粒截面30为长方形，长边垂直于细栅线，长度为25～80mm，短边平行于细栅线，长度为5～15mm,且短边与长边的比值小于等于1/5；所述长方形晶粒截面30的总面积占硅片表面面积的40%以上。
以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明技术原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。
Claims (5)
1.多晶硅太阳能电池片，包括多晶硅片和若干相互平行的细栅线；所述多晶硅片包括若干晶粒，各晶粒贯穿于多晶硅片上下表面，相邻晶粒间形成吸收位错的晶界；上述晶粒在多晶硅片表面的截面形成晶粒截面，所述晶粒截面在细栅线上的投影长度为栅线投影长度，所述晶粒截面在细栅线垂直方向上的投影长度为垂直栅线投影长度，其特征在于，上述栅线投影长度为2～20mm，垂直栅线投影长度为4～156mm，且栅线投影长度与垂直栅线投影长度的比值小于等于1/2。
2.根据权利要求1所述的多晶硅太阳能电池片，其特征在于，所述晶粒截面的总面积占硅片表面面积的40%以上。
3.根据权利要求1或2所述的多晶硅太阳能电池片，其特征在于，所述栅线投影长度为4～20mm，垂直栅线投影长度为12～100mm，且栅线投影长度与垂直栅线投影长度的比值小于等于1/3。
4.根据权利要求3所述的多晶硅太阳能电池片，其特征在于，所述晶粒截面为狭长形，其栅线投影长度为5～20mm，垂直栅线投影长度为20～90mm，且栅线投影长度与垂直栅线投影长度的比值小于等于1/4；所述狭长形晶粒截面的总面积占硅片表面面积的40%以上。
5.根据权利要求3所述的多晶硅太阳能电池片，其特征在于，所述晶粒截面为长方形，长边垂直于细栅线，长度为25～80mm，短边平行于细栅线，长度为5～15mm,且短边与长边的比值小于等于1/5；所述长方形晶粒截面的总面积占硅片表面面积的40%以上。
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