CN104465757A - 半导体装置及其制造方法 - Google Patents
半导体装置及其制造方法 Download PDFInfo
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- CN104465757A CN104465757A CN201310739910.7A CN201310739910A CN104465757A CN 104465757 A CN104465757 A CN 104465757A CN 201310739910 A CN201310739910 A CN 201310739910A CN 104465757 A CN104465757 A CN 104465757A
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
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- 239000004332 silver Substances 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
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- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 4
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- 230000000007 visual effect Effects 0.000 description 1
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Abstract
本发明提供一种散热性高的半导体装置及其制造方法。实施方式的半导体装置具备:半导体芯片;树脂体,覆盖半导体芯片,具有第1底面、与第1底面相对的第2底面、与第1以及第2底面交叉并相互相对的第1以及第2侧面、和与第1以及第2底面和第1以及第2侧面相交并相互相对的第3以及第4侧面;第1导电部件,设置于半导体芯片的第1底面侧,具有连接半导体芯片而在第1底面侧从树脂体露出的底座部、和端部从第1或者第2侧面突出的第1电极端子;第2导电部件,具有端部从第1或者第2侧面突出的第2电极端子;以及散热部件,设置于半导体芯片的第2底面侧,在第2底面侧从树脂体露出,端部从第3以及第4侧面在与第3以及第4侧面相同的面内露出。
Description
关联申请
本申请享有以日本专利申请2013-191129号(申请日:2013年9月13日)为基础申请的优先权。本申请通过参照该基础申请而包括基础申请的所有内容。
技术领域
本发明的实施方式涉及半导体装置及其制造方法。
背景技术
伴随半导体装置的动作而发生的热对向半导体装置自身或者安装有半导体装置的电子设备的动作、可靠性造成影响。特别是在功率半导体装置中发热量大,所以从半导体装置的散热变得重要。
在功率半导体装置中,例如提出了从封装下表面和封装上表面这两面散热的构造。
发明内容
本发明想要解决的课题在于提供一种散热性高的半导体装置及其制造方法。
实施方式的半导体装置,具备:半导体芯片;树脂体,覆盖半导体芯片,具有第1底面、与第1底面相对的第2底面、与第1以及第2底面交叉并相互相对的第1侧面以及第2侧面、与第1底面以及第2底面和第1侧面以及第2侧面交叉并相互相对的第3侧面以及第4侧面;第1导电部件,设置于半导体芯片的第1底面侧,具有连接半导体芯片而在第1底面侧从树脂体露出的底座部、和端部从第1侧面或者第2侧面突出的第1电极端子;第2导电部件,具有端部从第1侧面或者第2侧面突出的第2电极端子;以及散热部件,被设置于半导体芯片的第2底面侧,在第2底面侧从树脂体露出,端部从第3侧面以及第4侧面在与第3侧面以及第4侧面相同的面内露出。
附图说明
图1是第1实施方式的半导体装置的示意俯视图。
图2是第1实施方式的半导体装置的示意剖面图。
图3是构成第1实施方式的半导体装置的部件的示意俯视图。
图4是第1实施方式的半导体装置的示意侧面图。
图5是示出第1实施方式的半导体装置的制造方法的图。
图6是示出第1实施方式的半导体装置的制造方法的图。
图7是示出第1实施方式的半导体装置的制造方法的图。
图8是示出第1实施方式的半导体装置的制造方法的图。
图9是示出第1实施方式的半导体装置的制造方法的图。
图10是示出第1实施方式的半导体装置的制造方法的图。
图11是示出第1实施方式的半导体装置的制造方法的图。
图12是示出第1实施方式的半导体装置的制造方法的图。
图13是第1实施方式的半导体装置的制造方法的作用以及效果的说明图。
图14是第1实施方式的半导体装置的制造方法的作用以及效果的说明图。
图15是第2实施方式的半导体装置的示意俯视图。
图16是第2实施方式的半导体装置的示意剖面图。
图17是第3实施方式的半导体装置的示意剖面图。
图18是第4实施方式的半导体装置的散热部件的示意俯视图。
具体实施方式
以下,参照附图,说明本发明的实施方式。另外,在以下的说明中,对同一部件等附加同一符号,关于说明了一次的部件等适当地省略其说明。
(第1实施方式)
图1是本实施方式的半导体装置的示意俯视图。图1(a)是从树脂体的第2底面侧观察到的图。图1(b)是从树脂体的第1底面侧观察到的图。
图2是本实施方式的半导体装置的示意剖面图。图2(a)是图1(a)的AA剖面、图2(b)是图1(a)的BB剖面。
图3是构成本实施方式的半导体装置的部件的示意俯视图。图3(a)示出第1导电部件以及第2导电部件。另外,图3(b)示出散热部件。
图4是本实施方式的半导体装置的示意侧面图。图4(a)是从树脂体的第3侧面侧观察到的图。另外,图4(b)是从树脂体的第1侧面侧观察到的图。
本实施方式的半导体装置100具备半导体芯片10、模压树脂(树脂体)12、第1导电部件14、第2导电部件16、散热部件18、第3导电部件20。
半导体芯片10是例如由硅形成的纵型的MOSFET(Metal OxideSemiconductor Field Effect Transistor:金属氧化物半导体场效应晶体管)。在纵型的MOSFET的情况下,在半导体芯片10的一个面、例如第1底面侧,设置了漏电极(未图示)作为下部电极。另外,在半导体芯片10的另一面、例如第2底面侧,设置了源电极(未图示)以及栅电极(未图示)作为上部电极。
模压树脂(树脂体)12覆盖半导体芯片10。模压树脂12是例如添加了填料等的环氧系的热固化性树脂。
模压树脂12如图1(a)、(b)所示,具备第1底面、与第1底面相对的第2底面、与第1以及第2底面交叉且相互相对的第1以及第2侧面、和与第1以及第2底面、第1以及第2侧面交叉且相互相对的第3以及第4侧面。在本实施方式中,以模压树脂的外形是长方体形状的情况为例子进行说明,但模压树脂12的外形不限于长方体,例如,也可以是第1以及第2侧面为以朝向第1底面扩展的方式倾斜的面。
第1导电部件14设置于半导体芯片10的第1底面侧。第1导电部件14由例如铜、铁-镍合金等形成。第1导电部件14具备底座部14a、和4根第1电极端子14b~14e。
利用接合材料将半导体芯片10连接于底座部14a。具体而言,在底座部14a上,通过银膏、焊锡等接合材料接合了半导体芯片10。
如图1(b)所示,在模压树脂12的第1底面侧,底座部14a的表面从模压树脂12露出。通过该结构,从底座部14a对半导体芯片10的热进行散热。
4根第1电极端子14b~14e的端部从模压树脂12的第1侧面突出。换言之,第1电极端子14b~14e的端部不处于与第1侧面相同的面内,而是从第1侧面向外侧凸出。
第1电极端子14b~14e的端部从模压树脂12突出,从而在将半导体装置100通过焊接安装到电路基板等中时,在端部3面形成角焊缝。因此,安装强度变强,安装有半导体装置100的电路基板等的可靠性提高。另外,在将半导体装置100安装到电路基板上之后的外观检查中,在半导体装置100的封装侧面形成焊锡角焊缝,所以能够通过从电路基板上表面侧的观察,容易地判定安装状态是否良好。
第1电极端子14b~14e的端部从模压树脂12突出的突出量只要是能够在3面形成角焊缝的量,则没有特别限定。根据该观点,突出量优选大于第1电极端子14b~14e的厚度。例如,优选为大于等于0.1mm,更优选为大于等于0.5mm。
在半导体芯片10是纵型MOSFET的情况下,第1电极端子14b~14e成为漏极端子。
第2导电部件16由例如铜、铁-镍合金等形成。第2导电部件16具备4根第2电极端子16a~16b。
4根第2电极端子16a~16d的端部从模压树脂12的第2侧面突出。换言之,第2电极端子16a~16d的端部不处于与第2侧面相同的面内,而是从第2侧面向外侧凸出。第2导电部件16被折弯成形,在模压树脂12内,从第1底面侧向第2底面侧弯曲。另外,第2导电部件16不是必须限于弯曲的形状。
通过第2电极端子16a~16d的端部从模压树脂12突出,在将半导体装置100通过焊接安装到电路基板等中时,在端部3面形成角焊缝。因此,安装强度变强,安装有半导体装置100的电路基板等的可靠性提高。
第2电极端子16a~16d的端部从模压树脂12突出的突出量只要是能够3面形成角焊缝的量,则没有特别限定。根据该观点,突出量优选大于第2电极端子16a~16d的厚度。另外,例如,优选为大于等于0.1mm,更优选为大于等于0.5mm。
在半导体芯片10是纵型MOSFET的情况下,例如,第2电极端子16a成为栅极端子,第2电极端子16b~16d成为源极端子。
第3导电部件20设置于半导体芯片10的第2底面侧。第3导电部件20是对半导体芯片10的上部电极、和第2导电部件16的第2电极端子16b~16d进行电连接的连接器。上部电极是例如源电极。第3导电部件20是例如铜。另外,第2电极端子16a例如与在半导体芯片10的上部设置的栅电极直接或者间接地另外连接。
第3导电部件20粘接到半导体芯片10的上表面。具体而言,通过银膏、焊锡等接合材料将第3导电部件20接合于半导体芯片10。
散热部件18设置于半导体芯片10的第2底面侧。散热部件18由例如铜、铁-镍合金等形成。在第3导电部件20上,通过银膏、焊锡等接合材料,接合散热部件18。
如图3(b)所示,散热部件18具备散热板18a、第1狭窄部18b、第2狭窄部18c。
散热板18a在模压树脂12的第2底面侧从模压树脂12露出其表面。通过该结构,从散热板18a对半导体芯片10的热进行散热。在半导体芯片10的下表面,底座部14a从模压树脂12露出,在半导体芯片10的上表面,散热板18a从模压树脂12露出,从而半导体装置100成为从封装下表面和封装上表面这两面进行散热的两面散热构造。
第1狭窄部18b设置于散热板18a的第3侧面侧。第2狭窄部18c设置于散热板18a的第4侧面侧。
第1狭窄部18b以及第2狭窄部18c在对多个半导体装置100同时进行模压时,作为将多个散热部件18相互固定的部件、所谓支撑销发挥功能。关于第1狭窄部18b以及第2狭窄部18c,从使加工时的切断变得容易的观点出发,优选相比于散热板18a,宽度更窄且厚度更薄。
如图2(b)、图4(a)所示,第1狭窄部18b的端部从模压树脂12的第3侧面在与第3侧面大致相同的面内露出。此处,大致相同的面内是指,按照在同一切断工序中形成了第3侧面和第1狭窄部18b的端部的程度,第1狭窄部18b的端部存在于与第3侧面相同的面内。
另外,如图2(b)所示,第2狭窄部18c的端部从模压树脂12的第4侧面在与第4侧面大致相同的面内露出。此处,大致相同的面内是指,按照在同一切断工序中形成了第4侧面和第2狭窄部18c的端部的程度,第2狭窄部18c的端部存在于与第4侧面相同的面内。
另外,在本实施方式中,在模压树脂12的第1以及第2侧面中,散热部件18不露出。
本实施方式的半导体装置100通过具备两面散热构造,实现高的散热性。另外,通过第1以及第2电极端子14b~14e、16a~16d的端部从模压树脂12突出,安装强度变强,安装有半导体装置100的电路基板等的可靠性提高。另外,散热部件18具备散热板18a、第1狭窄部18b、第2狭窄部18c,从而能够容易地制造两面散热构造以及第1以及第2电极端子14b~14e、16a~16d的端部从模压树脂12突出的构造。
接下来,说明本实施方式的半导体装置的制造方法。图5~图12是示出本实施方式的制造方法的图。
在本实施方式的半导体装置的制造方法中,在具有在第1方向和与第1方向正交的第2方向矩阵状地配置的多个底座部、以及在第1方向延长的电极端子的引线框的底座部的各个中载置半导体芯片,将在第2方向连结的散热部件载置到半导体芯片上,以将在第2方向配置的半导体芯片一并地覆盖、并且使电极端子沿着第2方向露出的方式,形成树脂体,将电极端子沿着第2方向切断,将树脂体以及散热部件沿着第1方向切断。
首先,如图5所示,准备具备在第1方向和与第1方向正交的第2方向矩阵状地配置的多个底座部14a、以及在第1方向延长的电极端子24a、24b的引线框30。引线框30由例如铜、铁-镍合金等形成。引线框30通过例如蚀刻加工、或者加压加工形成。
电极端子24a在加工之后,成为半导体装置100的第1电极端子14b~14e。另外,电极端子24b在加工之后,成为半导体装置100的第2电极端子16a~16d。
接下来,如图6所示,在引线框30的底座部14a的各个中,载置半导体芯片10。例如,使用芯片安装机,在底座部14a上载置半导体芯片10,通过银膏、焊锡等接合材料,接合到底座部14a上。
接下来,如图7所示,在半导体芯片10的各个半导体芯片中,载置第3导电部件20。第3导电部件20是例如对半导体芯片10的上部电极、和电极端子24b进行电连接的连接器。
接下来,如图8所示,准备具备在第2方向连结的多个散热部件18的框架40。各个散热部件18通过支撑销42连结。切断后的支撑销的一部分成为上述第1狭窄部18b、第2狭窄部18c。关于支撑销42,从使加工时的切断变得容易的观点出发,优选相比于散热板18a宽度更窄。另外,更优选为厚度更薄。
接下来,如图9所示,将在第2方向连结的散热部件18载置到半导体芯片10上。具体而言,例如,在载置有半导体芯片10以及第3导电部件20的引线框30上,重叠具备散热部件18的框架40。例如,在第3导电部件20上,通过银膏、焊锡等接合材料接合散热部件18。
接下来,如图10所示,以将在第2方向配置的半导体芯片10一并覆盖,并且使电极端子24a、24b沿着第2方向露出的方式,形成模压树脂(树脂体)12。此时,使散热部件18从模压树脂12的表面露出。另外,此时,连接散热部件18的支撑销42被模压树脂12包覆。
具体而言,例如,以在空腔内收容半导体芯片10的方式,配置具备在第2方向延伸的空腔的树脂模压用的中空模具。进而,配置将散热部件18的表面罩上的上部模具。然后,在空腔内,例如,填充热固化性树脂,以规定的温度加热之后,冷却而固化。
接下来,如图11所示,将电极端子24a、24b沿着第2方向切断。在电极端子24a、24b的切断中,例如,使用模具来切断。
通过电极端子24a、24b被切断,形成第1电极端子14b~14e、第2电极端子16a~16d。第1电极端子14b~14e、第2电极端子16a~16d的端部成为从模压树脂12向外侧突出的构造。
接下来,如图12所示,将模压树脂(树脂体)12以及散热部件18沿着第1方向切断。具体而言,将模压树脂(树脂体)12以及散热部件18的支撑销部分,沿着图12中的虚线所示的线,例如通过刀具切割来切断。
通过将模压树脂(树脂体)12以及散热部件18切断,散热部件18的第1方向的端部从模压树脂12在与模压树脂(树脂体)12的侧面大致相同的面内露出。
通过以上的制造方法,制造半导体装置100。
例如,在多个半导体芯片10上单独地载置散热部件18的情况下,难以将各散热部件18的表面收敛于同一平面内。如果无法将各散热部件18的表面收敛于同一平面内,则在将各半导体芯片10以及散热部件18一并通过树脂模压时,难以稳定地使散热部件18从模压树脂12表面露出。
根据本实施方式的制造方法,在将多个散热部件18用支撑销连结了的状态下,载置到多个半导体芯片10之上。因此,易于将各散热部件18的表面收敛于同一平面内。因此,在将各半导体芯片10以及散热部件18通过树脂模压时,能够稳定地使散热部件18从模压树脂12表面露出。
图13、图14是本实施方式的半导体装置的制造方法的作用以及效果的说明图。假设在如图13所示,用在第1方向延长的支撑销44以及在第2方向延长的支撑销42合计4根支撑销连结散热部件18的情况下,在第1方向延长的支撑销44、和在第1方向延长的电极端子24a、24b上下重叠。因此,在第1方向延长的支撑销44以及在第1方向延长的电极端子24a、24b未被模压树脂12覆盖的情况下,难以将在第1方向延长的支撑销44和电极端子24a、24b同时切断。
因此,假设如图14所示,包括在第1方向延长的支撑销44以及在第1方向延长的电极端子24a、24b,用模压树脂12包覆所有半导体芯片10。在该情况下,将模压树脂12通过例如刀具切割,在图中虚线所示的第1方向切断。由此,无法使电极端子24a、24b从模压树脂12突出地形成。因此,在安装到电路基板等中的情况下,难以实现具备高的可靠性的半导体装置。
根据本实施方式的制造方法,通过使用仅在第2方向连结散热部件18的框架40,将电极端子24a、24b在未被模压树脂12覆盖的状态下切断。因此,在切断之后,能够使电极端子24a、24b从模压树脂12突出地形成。因此,在安装到电路基板等中的情况下,能够实现具备高的可靠性的半导体装置。
以上,根据本实施方式,实现散热性高、且可靠性高的半导体装置及其制造方法。
另外,关于第3导电部件20,以独立地载置到半导体芯片10上的方法为例子进行了说明,但还能够设为使用具备在第2方向连结的多个第3导电部件20的框架,一并载置到多个半导体芯片10上的方法。
(第2实施方式)
在本实施方式的半导体装置中,在散热部件具有散热板和设置于散热板的第1或者第2侧面侧且厚度比散热板薄的第3狭窄部、并且第3狭窄部与第2导电部件连接这一点上,与第1实施方式不同。以下,关于与第1实施方式重复的内容,省略记述。
图15是本实施方式的半导体装置的示意俯视图。图15(a)是从树脂体的第2底面侧观察到的图。另外,图15(b)是从树脂体的第1底面侧观察到的图。
图16是本实施方式的半导体装置的示意剖面图。图16(a)是图15(a)的AA剖面、图16(b)是图15(a)的BB剖面。
本实施方式的半导体装置200具备半导体芯片10、模压树脂(树脂体)12、第1导电部件14、第2导电部件16、散热部件18。与第1实施方式不同,不具备第3导电部件。
另外,散热部件18具备散热板18a、第1狭窄部18b、第2狭窄部18c、第3狭窄部18d。在半导体芯片10上,例如,通过银膏、焊锡等接合材料,接合散热部件18。
第3狭窄部18d代替第1实施方式的第3导电部件20。即,第3狭窄部18d对半导体芯片10的上部电极以及第2导电部件16进行电连接。
第3狭窄部18d设置于散热板18a的第2侧面侧,厚度比散热板18a薄。另外,第3狭窄部18d在与散热板18a的边界部中,以向第2底面侧倾斜的方式弯曲。通过该结构,散热部件18的端部不会重叠于半导体芯片10的端部,例如,抑制对散热部件18和半导体芯片10进行接合的导电性的接合材料漏出所致的短路不良等。另外,通过该结构,例如防止散热部件18接触到第1导电部件14而短路的情况。
根据本实施方式,通过将散热部件18用作连接器,而不需要第3导电部件,能够减少零件个数。另外,零件的接合面减少,从而在半导体芯片中设置散热部件18时,能够容易地确保散热部件18的上表面的平坦性。因此,能够稳定地使散热部件18表面在模压树脂12表面露出。
另外,零件的接合面减少,从而半导体芯片10的散热性也提高。进而,不需要第3导电部件,从而变得不需要第3导电部件和散热部件18的制造时的对齐余量。因此,能够增大散热部件18的面积。根据该观点,散热性也提高。
另外,本实施方式的半导体装置200的制造方法通过在第1实施方式中说明的制造方法中,省略第3导电部件的载置而实现。
以上,根据本实施方式,除了第1实施方式的效果以外,实现减少零件数、制造工艺稳定、进而散热性提高的半导体装置。
(第3实施方式)
在本实施方式的半导体装置中,第2导电部件的第2底面侧的位置比散热板的半导体芯片侧的位置更接近第2底面侧。另外,在第3狭窄部是平板状这一点上,与第2实施方式不同。以下,关于与第2实施方式重复的内容省略记述。
图17是本实施方式的半导体装置的示意剖面图。本实施方式的半导体装置的上表面与第2实施方式相同,所以参照作为第2实施方式的示意俯视图的图15。图17(a)是图15(a)的AA剖面、图17(b)是图15(a)的BB剖面。
在本实施方式的半导体装置300中,第3狭窄部18d不具备弯曲部而是平板状。该构造通过第2导电部件16的第2底面侧的位置比散热板18a的半导体芯片10侧的位置更接近第2底面侧而实现。
根据本实施方式,通过使第3狭窄部18d成为平板状,例如从半导体芯片10到第2导电部件16的路径变短,电阻被降低。另外,无需通过弯曲成型来形成第3狭窄部18d。因此,散热板18a的加工变得容易而弯曲加工误差降低,能够实现特性稳定的半导体装置。
以上,根据本实施方式,除了第1以及第2实施方式的效果以外,还实现制造工艺稳定、特性稳定的半导体装置。
(第4实施方式)
本实施方式的半导体装置除了分别各具备2根散热部件18的第1狭窄部18b、第2狭窄部18c以外,与第1实施方式相同。因此,关于与第1实施方式重复的内容,省略记述。
图18是本实施方式的半导体装置的散热部件的示意俯视图。如图18所示,散热部件18具备散热板18a、2根第1狭窄部18b、2根第2狭窄部18c。
根据本实施方式,在多个半导体芯片上同时载置多个散热板18时,能够将多个散热板18在第2方向用单侧各2根支撑销连结。因此,在半导体芯片上载置散热板18时的、散热板18的半导体芯片10上的位置控制变得容易。因此,实现具有稳定的形状以及特性的半导体装置。
在实施方式中,作为半导体芯片,以纵型MOSFET为例子进行了说明,但还能够将本发明应用于纵型MOSFET以外的器件、例如纵型IGBT(Insulated Gate Bipolar Transistor:绝缘栅双极型晶体管)、纵型SBT(Schottky Barrier Diode:肖特基势垒二极管)等。另外,能够在仅在半导体芯片的上部或者下部中的某一面中具备电极的横型器件中,应用本发明。
在实施方式中,以作为半导体使用了硅的器件为例子进行了说明。但是,不限于硅,还能够应用SiC等炭化物半导体、GaN系半导体等氮化物半导体。
在实施方式中,以第1导电部件以及第2导电部件具备4根电极端子的情况为例子进行了说明,但电极端子的数量不限于4根,也可以构成为具备其他数量的电极端子。
虽然说明了本发明的几个实施方式,但这些实施方式是作为例子而提出的,并未意图限定发明的范围。这些新的实施方式能够通过其他各种方式来实施,能够在不脱离发明的要旨的范围内,进行各种省略、置换、变更。例如,也可以将一个实施方式的构成要素置换或者变更为其他实施方式的构成要素。这些实施方式、其变形包含于发明的范围、要旨中,并且包含于权利要求书记载的发明和其均等范围中。
Claims (5)
1.一种半导体装置,其特征在于,具备:
半导体芯片;
树脂体,覆盖所述半导体芯片,该树脂体具有第1底面、与所述第1底面相对的第2底面、与所述第1底面以及所述第2底面交叉并相互相对的第1侧面以及第2侧面、与所述第1底面以及所述第2底面和所述第1侧面以及所述第2侧面交叉并相互相对的第3侧面以及第4侧面;
第1导电部件,被设置于所述半导体芯片的所述第1底面侧,该第1导电部件具有连接有所述半导体芯片并在所述第1底面侧从所述树脂体露出的底座部、和端部从所述第1侧面或者所述第2侧面突出的第1电极端子;
第2导电部件,具有端部从所述第1侧面或者所述第2侧面突出的第2电极端子;以及
散热部件,被设置于所述半导体芯片的所述第2底面侧,所述散热部件在所述第2底面侧从所述树脂体露出,所述散热部件的端部在与所述第3侧面以及所述第4侧面相同的面内从所述第3侧面以及所述第4侧面露出。
2.根据权利要求1所述的半导体装置,其特征在于,
所述散热部件具有散热板、和被设置于所述散热板的所述第3侧面侧以及所述第4侧面侧并且相比于所述散热板宽度更窄且厚度更薄的第1狭窄部以及第2狭窄部,所述第1狭窄部以及所述第2狭窄部从所述第3侧面以及所述第4侧面露出。
3.根据权利要求2所述的半导体装置,其特征在于,
所述散热部件具有被设置于所述散热板的所述第1侧面侧或者所述第2侧面侧且厚度比所述散热板薄的第3狭窄部,所述第3狭窄部与所述第2导电部件连接。
4.根据权利要求3所述的半导体装置,其特征在于,
所述第2导电部件的所述第2底面侧的位置相比于所述散热板的所述半导体芯片侧的位置更接近所述第2底面侧,所述第3狭窄部是平板状。
5.一种半导体装置的制造方法,其特征在于,
在具有在第1方向和与所述第1方向正交的第2方向上矩阵状地配置的多个底座部、和在所述第1方向延长的电极端子的引线框的、各个所述底座部中载置半导体芯片,
将在所述第2方向上连结的散热部件载置到所述半导体芯片上,
以将在所述第2方向上配置的所述半导体芯片一并覆盖、并且使所述电极端子沿着所述第2方向露出的方式,形成树脂体,
将所述电极端子沿着所述第2方向切断,
将所述树脂体以及所述散热部件沿着所述第1方向切断。
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US11088046B2 (en) * | 2018-06-25 | 2021-08-10 | Semiconductor Components Industries, Llc | Semiconductor device package with clip interconnect and dual side cooling |
US11600547B2 (en) * | 2019-12-02 | 2023-03-07 | Infineon Technologies Austria Ag | Semiconductor package with expanded heat spreader |
US20220139811A1 (en) * | 2020-11-02 | 2022-05-05 | Infineon Technologies Ag | Three Level Interconnect Clip |
CN117116872A (zh) * | 2023-07-13 | 2023-11-24 | 深圳市金誉半导体股份有限公司 | 一种半导体器件的封装结构及制作方法 |
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