CN104465738A - One-way high voltage controllable silicon - Google Patents

One-way high voltage controllable silicon Download PDF

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Publication number
CN104465738A
CN104465738A CN201310435186.9A CN201310435186A CN104465738A CN 104465738 A CN104465738 A CN 104465738A CN 201310435186 A CN201310435186 A CN 201310435186A CN 104465738 A CN104465738 A CN 104465738A
Authority
CN
China
Prior art keywords
type
emitter regions
type emitter
controllable silicon
anode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201310435186.9A
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Chinese (zh)
Inventor
王国新
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
WUXI HONGXI ELECTRONIC Co Ltd
Original Assignee
WUXI HONGXI ELECTRONIC Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by WUXI HONGXI ELECTRONIC Co Ltd filed Critical WUXI HONGXI ELECTRONIC Co Ltd
Priority to CN201310435186.9A priority Critical patent/CN104465738A/en
Publication of CN104465738A publication Critical patent/CN104465738A/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7432—Asymmetrical thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H01L29/745—Gate-turn-off devices with turn-off by field effect

Abstract

The invention discloses one-way high voltage controllable silicon. The one-way high voltage controllable silicon comprises a P-type anode region, a long N-type base region is formed on the upper surface of the P-type anode region, and an anode is formed on the lower surface of the P-type anode region. A short P-type base region is formed on the upper surface of the long N-type base region. Two N+ type emitter regions and three N- type emitter regions are sequentially and locally formed on the upper surface of the short P-type base region, and a gate level electrode is further locally arranged. An anode level electrode is arranged on the upper surfaces of the N+ type emitter regions and the upper surfaces of the N- type emitter regions. The long N-type base region and the short P-type base region are provided with an inner trench, and the inner trench is formed in the periphery of the gate level electrode, the N+ type emitter regions, the N- type emitter regions and the anode level electrode. The one-way high voltage controllable silicon can work under the conditions of high voltages and large currents, has the advantages of being resistant to high voltages, large in capacity and small in size, and can be widely applied to the various fields of electric leakage protection, solid-state relays, household appliance controllers and the like.

Description

A kind of one-way high-pressure controllable silicon
Technical field
The present invention relates to a kind of one-way high-pressure controllable silicon.
Background technology
The reliability of natural static discharge (ESD) phenomenon to integrated circuit forms serious threat.In industrial quarters, the inefficacy 30% of integrated circuit (IC) products is all owing to suffering caused by static discharge phenomenon, and more and more less process, and the probability that thinner gate oxide thickness all makes integrated circuit be subject to electrostatic discharges increases greatly.Therefore, the reliability improving integrated circuit electrostatic discharge protection has very important effect to the rate of finished products improving product.
At present, produce the producer of controlled silicon chip due to technical bottleneck, technique can only accomplish 600-800V, and other performances do not reach world level yet.In prior art, silicon controlled controls pole trigger current can only accomplish 10-60mA, and repetitive peak reverse voltage is 600V, and forward mean current rating is 1.0A, and it is resistance to forces down, capacity is little, volume is excessive, high cost.
Summary of the invention
The defect that the present invention seeks to exist for prior art provides a kind of one-way high-pressure controllable silicon.
The present invention for achieving the above object, adopts following technical scheme: a kind of one-way high-pressure controllable silicon, comprises p type anode district, and described p type anode district upper surface is formed with N-type growing base area, and described p type anode district lower surface is formed with positive electrode; Described N-type growing base area upper surface is formed with the short base of P type; Upper surface local, described P type short base is formed with 2 N+ type emitter regions and 3 N-type emitter regions successively, and local is also provided with gate leve electrode; Described N+ type emitter region and N-type emitter region upper surface are provided with positive level electrode; Described N-type growing base area and the short base of P type are provided with internal channel, and described internal channel is arranged in described gate leve electrode, N+ type emitter region, N-type emitter region and positive the outer of level electrode and places.
Beneficial effect of the present invention: controllable silicon of the present invention can work under high voltage, big current condition, it has high pressure resistant, that capacity is large, volume is little feature.Earth leakage protective can be widely used in, solid-state relay, the various fields such as domestic electric appliances controller.
Accompanying drawing explanation
Fig. 1 structural representation of the present invention.
Embodiment
Shown in Fig. 1, be a kind of one-way high-pressure controllable silicon, comprise p type anode district 2, described p type anode district 2 upper surface is formed with N-type growing base area 3, and described p type anode district 2 lower surface is formed with positive electrode 1; Described N-type growing base area 3 upper surface is formed with the short base 6 of P type; Upper surface local, described P type short base 6 is formed with 2 N+ type emitter regions 8 and 3 N-type emitter regions 9 successively, and local is also provided with gate leve electrode 7; Described N+ type emitter region 8 and N-type emitter region 9 upper surface are provided with positive level electrode 10; Described N-type growing base area 3 and the short base 6 of P type are provided with internal channel 5, and described internal channel 5 is arranged in described gate leve electrode 7, N+ type emitter region 8, N-type emitter region 9 and positive the outer of level electrode 10 and places.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.

Claims (1)

1. an one-way high-pressure controllable silicon, is characterized in that, comprises p type anode district (2), and described p type anode district (2) upper surface is formed with N-type growing base area (3), and described p type anode district (2) lower surface is formed with positive electrode (1); Described N-type growing base area (3) upper surface is formed with the short base of P type (6); The described short base of P type (6) upper surface local is formed with 2 N+ type emitter regions (8) and 3 N-type emitter regions (9) successively, and local is also provided with gate leve electrode (7); Described N+ type emitter region (8) and N-type emitter region (9) upper surface are provided with positive level electrode (10); Described N-type growing base area (3) and the short base of P type (6) are provided with internal channel (5), and described internal channel (5) is arranged in outer the placing of described gate leve electrode (7), N+ type emitter region (8), N-type emitter region (9) and positive level electrode (10).
CN201310435186.9A 2013-09-23 2013-09-23 One-way high voltage controllable silicon Pending CN104465738A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201310435186.9A CN104465738A (en) 2013-09-23 2013-09-23 One-way high voltage controllable silicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201310435186.9A CN104465738A (en) 2013-09-23 2013-09-23 One-way high voltage controllable silicon

Publications (1)

Publication Number Publication Date
CN104465738A true CN104465738A (en) 2015-03-25

Family

ID=52911508

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310435186.9A Pending CN104465738A (en) 2013-09-23 2013-09-23 One-way high voltage controllable silicon

Country Status (1)

Country Link
CN (1) CN104465738A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109449204A (en) * 2018-10-30 2019-03-08 深圳市金鑫城纸品有限公司 Thyristor and preparation method thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5360990A (en) * 1993-03-29 1994-11-01 Sunpower Corporation P/N junction device having porous emitter
CN201584417U (en) * 2009-12-18 2010-09-15 浙江四方电子有限公司 Thyristor die structure
CN202167494U (en) * 2011-07-28 2012-03-14 江苏捷捷微电子股份有限公司 Mesa technology controlled silicon chip structure
CN203491262U (en) * 2013-09-23 2014-03-19 无锡市宏矽电子有限公司 Unidirectional high-voltage silicon controlled rectifier

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5360990A (en) * 1993-03-29 1994-11-01 Sunpower Corporation P/N junction device having porous emitter
CN201584417U (en) * 2009-12-18 2010-09-15 浙江四方电子有限公司 Thyristor die structure
CN202167494U (en) * 2011-07-28 2012-03-14 江苏捷捷微电子股份有限公司 Mesa technology controlled silicon chip structure
CN203491262U (en) * 2013-09-23 2014-03-19 无锡市宏矽电子有限公司 Unidirectional high-voltage silicon controlled rectifier

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109449204A (en) * 2018-10-30 2019-03-08 深圳市金鑫城纸品有限公司 Thyristor and preparation method thereof
CN109449204B (en) * 2018-10-30 2021-12-07 上海领矽半导体有限公司 Thyristor and preparation method thereof

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Application publication date: 20150325