CN104465475B - The preparation method and flexible display device of flexible display device - Google Patents

The preparation method and flexible display device of flexible display device Download PDF

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Publication number
CN104465475B
CN104465475B CN201310431407.5A CN201310431407A CN104465475B CN 104465475 B CN104465475 B CN 104465475B CN 201310431407 A CN201310431407 A CN 201310431407A CN 104465475 B CN104465475 B CN 104465475B
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inverse
display device
preparation
film
flexible display
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CN104465475A (en
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习王锋
蔡世星
施露
黄秀颀
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Chengdu Vistar Optoelectronics Co Ltd
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Kunshan New Flat Panel Display Technology Center Co Ltd
Kunshan Guoxian Photoelectric Co Ltd
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/80Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10Substrates, e.g. flexible substrates
    • H10K77/111Flexible substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/851Division of substrate
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Abstract

The flexible display device obtained the invention discloses a kind of preparation method of flexible display device and by the preparation method.This method includes:Conductive layer is formed on the surface of hard substrate;The conductive layer formation against electrostriction film layer;Flexible parent metal is attached at the inverse electrostriction thin-film surface;Display element layer is made on the flexible parent metal;After the completion of prepared by the display element layer, alternating current is applied to the conductive layer, is vibrated using the micromechanical of inverse electrostriction film so that hard substrate is separated with flexible parent metal.The present invention is used as release layer using the inverse electrostriction film layer on hard substrate, after alternating current is applied, inverse mechanical stress between electrostriction film and flexible parent metal is much smaller than and the adhesion between lower floor hard substrate, so that flexible parent metal and hard substrate are separated, and hard substrate can be reused, manufacturing cost is greatlyd save, production efficiency is improved, and improve product yield.

Description

The preparation method and flexible display device of flexible display device
Technical field
It is a kind of preparation method of flexible display device specifically the present invention relates to flexible display device technical field, And the display device obtained with this preparation method.
Background technology
There is flexible OLED self-luminous to show, fast response time, brightness is high, visual angle is wide, cost is low excellent Point, it can be curled, fold, it might even be possible to as a part for wearable computer, therefore in good portable of display effect The special dimension such as product and military affairs has application widely.
The preparation method of current Flexible Displays product is broadly divided into two classes.The first kind is the method (roll using volume to volume To roll), but be due to that printing technology is limited, the product of some low required precisions, and yield rate and trustworthiness can only be prepared It is poor;Equations of The Second Kind is the method removed using pasting:Flexible base board is covered in prepare on Hard backed boards and shows product, has been prepared Hard backed boards are removed again after into display device.This method precision is higher, and manufacturing equipment is manufactured with tradition TFT-LCD arrays Equipment is similar, therefore the target applied in a short time closer to volume production.
Paste in the method removed, after flexible glass substrate and hard substrate are attached and carry out follow-up high temperature process In, because mechanical stress between the two gradually strengthens, after prepared by device complete, the stripping of flexible display and hard substrate From as a technical barrier.At present, the existing solution of industry mainly includes using organic gel by organic plastics substrate, surpassed The flexible base boards such as thin glass are covered on hard glass substrate, are prepared and are completed after display device, superlaser is used at its back side The method of beam scanning so that aging occurs for bonding agent, and adhesive performance declines, so that organic plastics substrate can be from glass base Stripped down on plate.But this method is due to needing superlaser beam scanning, production efficiency is relatively low, the uniformity of stripping compared with Difference, and hard substrate can not reuse.Another method is heating sublimation method, mainly in hard substrate and flexible base board Between the addition auxiliary layer such as ITO, after the completion of device, heating makes ITO distillation decomposition so that flexible device and hard substrate point From.But there is uneven, the problems such as cost is high of separation in this method.Still an alternative is that heating fusion method, mainly passes through Increase auxiliary layer between hard substrate and flexible base board, and be allowed to using heating the effect of fusing so that flexible base board with it is hard Matter substrate is separated.But auxiliary material still needs decomposition in this method, and there is the incomplete risk of decomposition, while not Beneficial to reducing cost.
The content of the invention
, can easily will be soft the technical problem to be solved in the present invention is to provide a kind of preparation method of flexible display device Property device is separated with hard substrate, so as to improve production efficiency, reduce cost, and improves product qualification rate.
In order to solve the above-mentioned technical problem, the invention provides a kind of preparation method of flexible display device, including:
Conductive layer is formed on the surface of hard substrate;
Inverse electrostriction film layer is formed on the surface of the conductive layer;
Flexible parent metal is attached at the inverse electrostriction thin-film surface;
Display element layer is made on the flexible parent metal;
After the completion of prepared by the display element layer, apply alternating current to the conductive layer, utilize inverse electrostriction film Micromechanical is vibrated so that hard substrate is separated with flexible parent metal.
Further, the material of the inverse electrostriction film layer is polynary system thin-film material, semi-conducting material, dielectric Material or ceramic material.
Further, the material of the inverse electrostriction film layer is selected from PbO, SiO2、ZnO2、TiO2 、LiNbO3、 LiTaO3 、BaTiO3、 BaMO3 、K(Nb,Ta)O3、ZnO、ZrO3And SiO2 Al2O3In one kind or any combination.
Further, the inverse electrostriction film is porous membrane, nanometer columnar thin-film or nano-fiber film.
Further, inverse electrostriction film one patterning of formation.
Further, the inverse electrostriction film dimensions are less than conductive layer.
Further, the inverse electrostriction film uses radio-frequency magnetron sputter method, solution spin-coating method, pulsed laser deposition Method, chemical vapour deposition technique or compression method formation are on the surface of the conductive layer.
Further, the thickness of the inverse electrostriction film is 1 nanometer ~ 10 millimeters.
Further, formed on the surface of the conductive layer after inverse electrostriction film layer, in addition to:Preparation is loaded with The hard substrate surface of inverse electrostriction film layer carries out plasma treatment or acidification.
Further, the plasma treatment is O2Plasma treatment or H2Plasma treatment.
Further, the voltage of the alternating current applied to the conductive layer is 1 ~ 380V, and frequency is 50HZ ~ 100MHZ.
The present invention also provides a kind of display device obtained according to above-mentioned preparation method.
The preparation method of the flexible display device of the present invention, due to being made using the inverse electrostriction film layer on hard substrate For release layer, after alternating current is applied, because the mechanical stress between inverse electrostriction film and flexible parent metal is much smaller than inverse Adhesion between electrostriction film and lower floor's hard substrate, it is final to cause flexible parent metal and display device and hard thereon Substrate is separated, and hard substrate can be reused, and greatlys save manufacturing cost, improves production efficiency, and improve Product yield.
Brief description of the drawings
Figure 1A ~ Fig. 1 F are the schematic flow sheets of the preparation method of the flexible display device of the present invention.
Fig. 2 is the diagrammatic cross-section of the substrate of the making flexible display device of second embodiment of the invention.
Fig. 3 is the plan of the substrate of the making flexible display device of second embodiment of the invention.
Embodiment
The invention will be further described with specific embodiment below in conjunction with the accompanying drawings, so that those skilled in the art can be with It is better understood from the present invention and can be practiced, but illustrated embodiment is not as a limitation of the invention.
Figure 1A to Fig. 1 F is the schematic flow sheet of the preparation method of the flexible display of first embodiment of the invention.It is first First, Figure 1A to Fig. 1 E is referred to, it is the manufacturing process for the substrate 100 for making flexible display.In the present embodiment, be with FOLED(Flexible OLED, flexible Organic Light Emitting Diode)Exemplified by display, in the present embodiment, Flexible Displays are made The substrate 100 of device is a FOLED panel, that is to say, that one can be ultimately formed solely by making the substrate 100 of flexible display Vertical flexible display, e.g. FOLED displays.
Referring to Figure 1A, there is provided hard substrate 110.In the present embodiment, hard substrate 110 can be quartz base plate, glass Substrate or metal substrate, but it is not limited to this.The main making in follow-up circuit and display element of hard substrate 110 During the effect of support is provided, to avoid flexible parent metal from the phenomenons such as broken, gauffer and deformation occur.
Figure 1B is referred to, conductive layer 120 is formed on the surface 112 of hard substrate 110.The material of conductive layer 120 can To be metal, organic conductor etc., such as MOW(Molybdenum tungsten)Mo、 AL、Ti、CNT(CNT)、 Graphene (Graphene)Deng, But it is also not necessarily limited to this.Conductive layer 120 can use physical vaporous deposition(Physical vapor deposition, PVD), change Learn vapour deposition process(Chemical vapor deposition, CVD)Or sputtering method to be formed to make, the thickness of conductive layer 120 Spending scope can be between 0.05 ~ 2 micron.In the present embodiment, conductive layer 120 is that the thickness formed using sputtering method is about 0.1 The AL film layers of micron.
Fig. 1 C are referred to, inverse electrostriction film layer 130 is formed on conductive layer 120.Inverse electrostriction film layer 130 Material can be the polynary system film such as binary system, ternary system, such as PbO SiO2、ZnO2 TiO2 、LiNbO3、LiTaO3 、 BaTiO3、 BaMO3 、K(Nb,Ta)O3Deng can also include:Semiconductor, such as TiO2、ZnO、ZrO3;Dielectric, such as SiO2 Al2O3;Ceramics, such as LiNbO3、LiTaO3 、BaTiO3、 BaMO3 、K(Nb,Ta)O3Deng.This can be against electrostriction film Monocrystalline, polycrystalline or crystallite, can also be noncrystal etc..Such as by TiO2、ZnO、ZrO3、SiO2 Al2O3、PbO SiO2、ZnO2 TiO2 、 LiNbO3、LiTaO3 、BaTiO3、 BaMO3 、K(Nb,Ta)O3Single crystallization, polycrystallization, controlled micro crystallization or decrystallized etc..This is against electroluminescent Self-adhering film can be dense film, porous membrane, nanometer columnar thin-film, nano-fiber film etc., in order to more easily realize The separation of flexible display device and hard substrate, can preferentially choose porous membrane, nanometer columnar thin-film or nano-fiber film. In order to more easily realize the separation of flexible display device and hard substrate, this can have certain figure against electrostriction film Case structure.Inverse electrostriction film dimensions can be slightly less than conductive film 120.Inverse electrostriction film can utilize prior art In common radio-frequency magnetron sputter method, solution spin-coating method, pulsed laser deposition, chemical vapour deposition technique or compression method etc. formed On the electrically conductive.The thickness of inverse electrostriction film can be between 1 nanometer ~ 10 millimeters.Inverse electrostriction is thin in the present embodiment Film is to utilize the PbO dense films that radio-frequency magnetron sputter method deposit thickness is 50 nanometers.
Fig. 1 D are referred to, the hard substrate surface for being loaded with inverse electrostriction film of preparation is carried out at appropriate surface Reason, such as plasma(Plasma)Processing or acidification, to improve surface tension.Wherein plasma processing can be O2 Plasma processing or H2Plasma processing etc..It can not certainly be surface-treated, be not surface-treated in the present embodiment. Then flexible parent metal is attached directly to be attached with the hard substrate of inverse electrostriction film.The thickness model of flexible parent metal 140 Enclose general between 5 ~ 200 microns.When flexible parent metal 140 is plastic base, it can be formed at the back side of flexible parent metal 140 Water oxygen barrier layer, effectively to completely cut off extraneous water and oxygen.When flexible base board is flexible glass, can with without any processing, Edge isolation processing can certainly be done as needed.
Fig. 1 E are referred to, display element layer 150 is made on flexible parent metal 140.Because the support of hard substrate 110 is made With making display element layer 150 on flexible parent metal 140 being fit together with hard substrate 110, flexible base can be prevented effectively from There is broken, fold and deformation in the manufacturing process of display element layer 150 in plate 140.Display element layer 150 can be AMOLED (Active matrix organic light-emitting diode)、PMOLED(Passive matrix Organic Light Emitting Diode)、LED(Light emitting diode)、TFT- LCD(Thin Film Transistor-LCD)Deng.In the present embodiment, it is to manufacture FAMOLED(The organic hair of flexible active matrix Optical diode)Exemplified by display, therefore, making display element layer 150 comprises the following steps on flexible parent metal 140:First, Organic light-emitting diode display layer 152 is made on flexible parent metal 140;Then, encapsulating organic light emitting diode display layer 152 To form encapsulated layer 154.Organic light-emitting diode display layer 152 can include thin film transistor (TFT) control circuit, conductive electrode, Organic material functional layer and metal electrode etc..The method of encapsulating organic light emitting diode display layer 152 is sealed including flexible metal Dress method, flexible glass package method, Plastic Package method or film encapsulation etc., but it is not limited to this.By Organic Light Emitting Diode The element of display layer 152 is sensitive to the seriously corroded of steam, oxygen, therefore in manufacturing process, should try one's best and avoid steam and oxygen Gas, or made in vacuum environment.
It is the making for completing the substrate 100 for making flexible display by above-mentioned making step, refers to Fig. 1 E, makes Making the substrate 100 of flexible display includes hard substrate 110, conductive layer 120, inverse electrostriction film layer 130, flexible parent metal 140 and display element layer 150.The substrate 100 for making flexible display can be used to after flexible parent metal 140 is peeled off The making of next flexible display.
Refering to Fig. 1 F, after display device completion, the conductive membrane layer 120 of whole device is passed into alternating current, is allowed to Small vibrations are produced, because the mechanical stress between inverse electrostriction film and flexible base board is much smaller than inverse electrostriction film With the adhesion between lower floor hard substrate, it is final cause flexible base board and on display device and hard substrate separated. Specifically, whole device is positioned on the microscope carrier for being connected with alternating current, there is contact point or contact that can be conductive at the microscope carrier edge Face, the contact point or contact surface can be contacted with the surface of conductive layer 120 on hard substrate, and can be thin with inverse electrostriction The upper surface of film, then by adjusting the voltage and frequency of alternating current, makes inverse electrostriction film produce small vibrations, Alternating voltage is adjustable between 1 ~ 380V, and frequency is adjustable between 50HZ ~ 100MHZ.It is final cause flexible base board and on display Device and hard substrate are separated, so as to complete the making of flexible display device.
Fig. 2 is the sectional view of the flexible display panels unit of second embodiment of the invention.Fig. 3 is second embodiment of the invention Flexible display panels unit plan.Fig. 2 and the step method with reference to first embodiment are referred to, in the present embodiment In, make conductive layer 220, inverse electrostriction film during the substrate 200 for making flexible display successively on hard substrate 210 Layer 230, flexible substrate layer 240 and display element layer 250(Including organic LED layers 252 and encapsulated layer 254) Step method and that the making conductive layer 120 of substrate 100 of flexible display, inverse electrostriction are made in first embodiment is thin Film layer 130, flexible substrate layer 140 and display element layer 150(Including organic LED layers 152 and encapsulated layer 154) Step method it is roughly the same, will not be repeated here.The preparation method of the flexible display of the present embodiment and first embodiment The difference of the preparation method of flexible display is that the inverse electrostriction film on hard substrate has certain pattern, for example may be used Think circular, square, oval etc..Inverse electrostriction film is fabricated to certain pattern, is to more easily realize The separation of flexible display device and hard substrate.And production method can be in the technique for being processed inverse electrostriction film When, the pattern of needs is pre-formed on mask plate, so that the inverse electrostriction film formed has corresponding pattern. When flexible display device carries out device isolation after completing, it can regulate and control against the uniform of the microcosmic vibrations of electrostriction film Property, so as to regulate and control flexible display device each point position stressing conditions in the separation process with hard substrate.In the present embodiment Inverse electrostriction film has square configuration, and the square area of surrounding is big and compares comparatively dense.
In addition, polylith flexible base board can be incorporated into one piece of hard substrate by the present invention according to production line demand and limitation On the making of large area that carries out together, the inverse electrostrictive properties of utilization after flexible display element makes and finished, by flexibility Display device is separated with hard substrate, can so improve volume production effect.In addition, the present invention can also be applied to other What flexible electronic device.
In summary, the preparation method of flexible display of the invention is special using the mechanical oscillation of inverse electrostriction film Property so that hard substrate is separated with flexible base board, due to not adding other decomposed substances between flexible device and hard substrate, So not having any residuals.Hard substrate can also greatly save cost with Reusability after device isolation.
Embodiment described above is only the preferred embodiment to absolutely prove the present invention and being lifted, protection model of the invention Enclose not limited to this.Equivalent substitute or conversion that those skilled in the art are made on the basis of the present invention, in the present invention Protection domain within.Protection scope of the present invention is defined by claims.

Claims (12)

1. a kind of preparation method of flexible display device, it is characterised in that including:
Conductive layer is formed on the surface of hard substrate;
Inverse electrostriction film layer is formed on the surface of the conductive layer;
Flexible parent metal is attached at the inverse electrostriction thin-film surface;
Display element layer is made on the flexible parent metal;
After the completion of prepared by the display element layer, apply alternating current to the conductive layer, utilize the microcosmic of inverse electrostriction film Mechanical oscillation so that hard substrate is separated with flexible parent metal.
2. the preparation method of flexible display device according to claim 1, it is characterised in that the inverse electrostriction film The material of layer is polynary system thin-film material, semi-conducting material, dielectric substance or ceramic material.
3. the preparation method of flexible display device according to claim 1, it is characterised in that the inverse electrostriction film The material of layer is selected from PbO, SiO2、ZnO2、TiO2、LiNbO3、LiTaO3、BaTiO3、 BaMO3、K(Nb,Ta)O3、ZnO、ZrO3With SiO2 Al2O3In one kind or any combination.
4. the preparation method of flexible display device according to claim 1, it is characterised in that the inverse electrostriction film It is porous membrane, nanometer columnar thin-film or nano-fiber film.
5. the preparation method of flexible display device according to claim 1, it is characterised in that the inverse electrostriction film Form a patterning.
6. the preparation method of flexible display device according to claim 1, it is characterised in that the inverse electrostriction film Size is less than conductive layer.
7. the preparation method of flexible display device according to claim 1, it is characterised in that the inverse electrostriction film Using the formation of radio-frequency magnetron sputter method, solution spin-coating method, pulsed laser deposition, chemical vapour deposition technique or compression method described The surface of conductive layer.
8. the preparation method of flexible display device according to claim 1, it is characterised in that the inverse electrostriction film Thickness be 1 nanometer ~ 10 millimeters.
9. the preparation method of flexible display device according to claim 1, it is characterised in that on the surface of the conductive layer Formed after inverse electrostriction film layer, in addition to:The hard substrate surface for being loaded with inverse electrostriction film layer of preparation is carried out Plasma treatment or acidification.
10. the preparation method of flexible display device according to claim 9, it is characterised in that the plasma treatment is O2 Plasma treatment or H2Plasma treatment.
11. the preparation method of flexible display device according to claim 1, it is characterised in that apply to the conductive layer Alternating current voltage be 1 ~ 380V, frequency be 50HZ ~ 100MHZ.
12. the display device that a kind of preparation method according to any one in claim 1 ~ 10 is obtained.
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CN106711078B (en) * 2016-12-29 2019-08-13 昆山工研院新型平板显示技术中心有限公司 A kind of production method of flexible device
CN107068723B (en) * 2017-04-21 2020-02-18 京东方科技集团股份有限公司 Flexible display mother board, flexible display substrate and preparation method thereof
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