CN104465475A - Method for manufacturing flexible display device and flexible display device - Google Patents
Method for manufacturing flexible display device and flexible display device Download PDFInfo
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- CN104465475A CN104465475A CN201310431407.5A CN201310431407A CN104465475A CN 104465475 A CN104465475 A CN 104465475A CN 201310431407 A CN201310431407 A CN 201310431407A CN 104465475 A CN104465475 A CN 104465475A
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- electrostriction
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/851—Division of substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a method for manufacturing a flexible display device and the flexible display device obtained through the manufacturing method. The method comprises the steps that a conductive layer is formed on the surface of a hard substrate; an inverse electrostriction thin film layer is formed on the conductive layer; a flexible base material is attached to the surface of the inverse electrostriction thin film layer; a display element layer is manufactured on the flexible base material; after the display element layer is manufactured, alternating currents are applied to the conductive layer, and the hard substrate and the flexible base material are separated through the micromechanical vibration of an inverse electrostriction thin film. The inverse electrostriction thin film layer on the hard substrate is adopted as a release layer, after the alternating currents are applied, mechanical stress between the inverse electrostriction thin film and the flexible base material is far smaller than binding force between the inverse electrostriction thin film and the lower hard substrate, the flexible base material and the hard substrate can be separated, the hard substrate can be used repeatedly, manufacturing cost is greatly saved, production efficiency is improved, and the product yield is improved.
Description
Technical field
The present invention relates to flexible display device technical field, specifically, is a kind of preparation method of flexible display device, and with the display device that this preparation method obtains.
Background technology
It is flexible that organic light emitting display has self-luminous display, fast response time, brightness is high, visual angle is wide, low cost and other advantages, it can be curled, folding, even can as a part for wearable computer, therefore there is application widely in the good portable product of display effect and the military special dimension that waits.
The preparation method of current Flexible Displays product is mainly divided into two classes.The first kind adopts the method (roll to roll) of volume to volume, but limit due to printing technology, can only prepare the product of some low required precisions, and rate of finished products and trustworthiness poor; Equations of The Second Kind adopts to paste the method for taking off: flexible base, board is covered in preparation display product on Hard backed boards, takes off Hard backed boards again after having prepared display device.This method precision is higher, manufacturing equipment and traditional TFT-LCD array manufacturing equipment similar, therefore in a short time closer to volume production application target.
Paste in the method for taking off, attach rear at flexible glass substrate and hard substrate and carry out in follow-up high temperature process, because mechanical stress between the two strengthens gradually, after prepared by device, the stripping of flexible display and hard substrate has become a technical barrier.At present, the existing solution of industry mainly comprises employing organic gel and is covered on hard glass substrate by flexible base, boards such as organic plastics substrate, ultra-thin glass, after having prepared display device, the method of high energy laser beam scanning is adopted at its back side, bonding agent is occurred aging, adhesive performance declines, thus organic plastics substrate can be stripped down from glass substrate.But this method is due to the scanning of needs high energy laser beam, and production efficiency is lower, and the uniformity of stripping is poor, and hard substrate can not be reused.Another kind method is heating sublimation method, mainly between hard substrate and flexible base, board, adds the auxiliary layers such as ITO, and after device completes, heating makes ITO distillation decompose, and flexible device is separated with hard substrate.But it is uneven to there is separation in the method, high in cost of production problem.Also have a kind of method to be heat fused method, mainly by increasing auxiliary layer between hard substrate and flexible base, board, and utilize heating to make it the effect melted, flexible base, board is separated with hard substrate.But auxiliary material still need to decompose in this method, and there is the incomplete risk of decomposition, be unfavorable for reducing costs simultaneously.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of preparation method of flexible display device, can be separated with hard substrate by flexible device easily, thus enhances productivity, reduces costs, and improves conforming product rate.
In order to solve the problems of the technologies described above, the invention provides a kind of preparation method of flexible display device, comprising:
Conductive layer is formed on the surface of hard substrate;
Inverse electrostriction thin layer is formed on the surface of described conductive layer;
Flexible parent metal is attached at described inverse electrostriction thin-film surface;
Described flexible parent metal makes display element layer;
After prepared by described display element layer, apply alternating current to described conductive layer, utilize the micromechanical against electrostriction film to vibrate, hard substrate is separated with flexible parent metal.
Further, the material of described inverse electrostriction thin layer is polynary system thin-film material, semi-conducting material, dielectric substance or ceramic material.
Further, the material of described inverse electrostriction thin layer is selected from PbO, SiO
2, ZnO
2, TiO
2, LiNbO
3, LiTaO
3, BaTiO
3, BaMO
3, K (Nb, Ta) O
3, ZnO, ZrO
3and SiO
2al
2o
3in one or combination in any.
Further, described inverse electrostriction film is porous membrane, nanometer columnar thin-film or nano-fiber film.
Further, described inverse electrostriction film forms a patterning.
Further, described inverse electrostriction film dimensions is less than conductive layer.
Further, described inverse electrostriction film adopts radio-frequency magnetron sputter method, solution spin-coating method, pulsed laser deposition, chemical vapour deposition technique or compression method to be formed in the surface of described conductive layer.
Further, the thickness of described inverse electrostriction film is 1 nanometer ~ 10 millimeter.
Further, after the surface of described conductive layer forms inverse electrostriction thin layer, also comprise: plasma treatment or acidification are carried out to the hard substrate surface being loaded with inverse electrostriction thin layer of preparation.
Further, described plasma is treated to O2 plasma process or H2 plasma process.
Further, the voltage of the alternating current applied to described conductive layer is 1 ~ 380V, and frequency is 50HZ ~ 100MHZ.
The present invention also provides a kind of display device obtained according to above-mentioned preparation method.
The preparation method of flexible display device of the present invention, because the inverse electrostriction thin layer on employing hard substrate is as release layer, after applying alternating current, because inverse mechanical stress between electrostriction film and flexible parent metal is much smaller than inverse adhesion between electrostriction film and lower floor's hard substrate, finally make flexible parent metal and on display device be separated with hard substrate, and hard substrate can be reused, greatly save manufacturing cost, improve production efficiency, and improve product yield.
Accompanying drawing explanation
Figure 1A ~ Fig. 1 F is the schematic flow sheet of the preparation method of flexible display device of the present invention.
Fig. 2 is the generalized section of the substrate of the making flexible display device of second embodiment of the invention.
Fig. 3 is the plane graph of the substrate of the making flexible display device of second embodiment of the invention.
Embodiment
Below in conjunction with the drawings and specific embodiments, the invention will be further described, can better understand the present invention and can be implemented, but illustrated embodiment is not as a limitation of the invention to make those skilled in the art.
Figure 1A to Fig. 1 F is the schematic flow sheet of the manufacture method of the flexible display of first embodiment of the invention.First, refer to Figure 1A to Fig. 1 E, it is the manufacturing process of the substrate 100 making flexible display.In the present embodiment, with FOLED(Flexible OLED, flexible Organic Light Emitting Diode) display is example, in the present embodiment, the substrate 100 making flexible display is a FOLED panel, that is, the substrate 100 making flexible display finally can form an independently flexible display, such as, be FOLED display.
Refer to Figure 1A, hard substrate 110 is provided.In the present embodiment, hard substrate 110 can be quartz base plate, glass substrate or metal substrate, but is not limited thereto., there is the phenomenons such as broken, gauffer and distortion to avoid flexible parent metal in the effect that hard substrate 110 mainly provides support in the manufacturing process of follow-up circuit and display element.
Refer to Figure 1B, the surface 112 of hard substrate 110 forms conductive layer 120.The material of conductive layer 120 can be metal, organic conductor etc., as MOW(molybdenum tungsten) Mo, AL, Ti, CNT(carbon nano-tube), Graphene (Graphene) etc., but to be also not limited thereto.Conductive layer 120 can adopt physical vaporous deposition (physical vapor deposition, PVD), chemical vapour deposition technique (chemical vapor deposition, CVD) or sputtering method make formation, the thickness range of conductive layer 120 can between 0.05 ~ 2 micron.In the present embodiment, conductive layer 120 is AL thin layers that the thickness utilizing sputtering method to be formed is about 0.1 micron.
Refer to Fig. 1 C, conductive layer 120 is formed inverse electrostriction thin layer 130.The material of inverse electrostriction thin layer 130 can be the polynary system such as binary system, ternary system film, as PbO SiO
2, ZnO
2tiO
2, LiNbO
3, LiTaO
3, BaTiO
3, BaMO
3, K (Nb, Ta) O
3deng, also can comprise: semiconductor, as TiO
2, ZnO, ZrO
3; Dielectric, as SiO
2al2O
3; Pottery, as LiNbO
3, LiTaO
3, BaTiO
3, BaMO
3, K (Nb, Ta) O
3deng.This can be monocrystalline, polycrystalline or crystallite against electrostriction film, also can be noncrystal etc.As by TiO
2, ZnO, ZrO
3, SiO
2al
2o
3, PbO SiO
2, ZnO
2tiO
2, LiNbO
3, LiTaO
3, BaTiO
3, BaMO
3, K (Nb, Ta) O
3single crystallization, polycrystallization, controlled micro crystallization or decrystallized etc.This can be dense film, porous membrane, nanometer columnar thin-film, nano-fiber film etc. against electrostriction film, in order to more easily realize being separated of flexible display device and hard substrate, porous membrane, nanometer columnar thin-film or nano-fiber film preferentially can be chosen.In order to more easily realize being separated of flexible display device and hard substrate, this can be have certain patterning against electrostriction film.Inverse electrostriction film dimensions can be slightly less than conductive film 120.Inverse electrostriction film can utilize radio-frequency magnetron sputter method common in prior art, solution spin-coating method, pulsed laser deposition, chemical vapour deposition technique or compression method etc. to be formed on the electrically conductive.The thickness of inverse electrostriction film can between 1 nanometer ~ 10 millimeter.In the present embodiment, inverse electrostriction film utilizes radio-frequency magnetron sputter method deposit thickness to be the PbO dense film of 50 nanometers.
Refer to Fig. 1 D, suitable surface treatment carried out, as plasma(plasma in the hard substrate surface being loaded with inverse electrostriction film of preparation) process or acidification, to improve surface tension.Wherein plasma process can be O
2plasma process or H
2plasma process etc.Can not certainly surface treatment be done, in the present embodiment, not do surface treatment.Subsequently flexible parent metal is directly attached at and is attached with against on the hard substrate of electrostriction film.The thickness range of flexible parent metal 140 is generally between 5 ~ 200 microns.When flexible parent metal 140 is plastic bases, water oxygen barrier layers can be formed at the back side of flexible parent metal 140, with effectively isolated extraneous water and oxygen.When flexible base, board is flexible glass, can be left intact, edge isolation process can certainly be done as required.
Refer to Fig. 1 E, flexible parent metal 140 makes display element layer 150.Due to the supporting role of hard substrate 110, make display element layer 150 fitting together on flexible parent metal 140 with hard substrate 110, can effectively avoid flexible base, board 140 in display element layer 150 manufacturing process, occur broken, fold and distortion.Display element layer 150 can be AMOLED(active matrix organic light-emitting diode), PMOLED(passive matrix Organic Light Emitting Diode), LED(light-emitting diode), TFT-LCD(Thin Film Transistor-LCD) etc.In the present embodiment, that to manufacture FAMOLED (flexible active matrix Organic Light Emitting Diode) display be example, therefore, flexible parent metal 140 makes display element layer 150 and comprises the following steps: first, flexible parent metal 140 is manufactured with OLED display layer 152; Then, encapsulating organic light emitting diodes display layer 152 is to form encapsulated layer 154.Organic light-emitting diode display layer 152 can comprise thin-film transistor control circuit, conductive electrode, organic material functional layer and metal electrode etc.The method of encapsulating organic light emitting diodes display layer 152 comprises flexible metal package method, flexible glass package method, Plastic Package method or film encapsulation etc., but is not limited thereto.Responsive to the seriously corroded of steam, oxygen by the element of organic light-emitting diode display layer 152, therefore in manufacturing process, steam and oxygen should be avoided as far as possible, or make in vacuum environment.
Namely the making of the substrate 100 making flexible display is completed through above-mentioned making step, refer to Fig. 1 E, the substrate 100 making flexible display comprises hard substrate 110, conductive layer 120, inverse electrostriction thin layer 130, flexible parent metal 140 and display element layer 150.Namely the substrate 100 making flexible display can be used for the making of next flexible display after peeling off flexible parent metal 140.
Consult Fig. 1 F, after display device completes, the conductive membrane layer 120 of whole device is passed to alternating current, make it to produce small vibrations, because inverse mechanical stress between electrostriction film and flexible base, board is much smaller than inverse adhesion between electrostriction film and lower floor's hard substrate, finally make flexible base, board and on display device be separated with hard substrate.Particularly, being positioned over by whole device is connected with on the microscope carrier of alternating current, there are the contact point or contact-making surface that can conduct electricity in this microscope carrier edge, this contact point or contact-making surface can with conductive layer 120 surface contact on hard substrate, and can contact with the upper surface of inverse electrostriction film, subsequently by voltage and the frequency of adjustment alternating current, make inverse electrostriction film produce small vibrations, alternating voltage is adjustable between 1 ~ 380V, and frequency is adjustable between 50HZ ~ 100MHZ.Finally make flexible base, board and on display device be separated with hard substrate, thus complete the making of flexible display device.
Fig. 2 is the cutaway view of the flexible display panels unit of second embodiment of the invention.Fig. 3 is the plane graph of the flexible display panels unit of second embodiment of the invention.Refer to Fig. 2 and the step method with reference to the first embodiment, in the present embodiment, on hard substrate 210, conductive layer 220 is made successively when making the substrate 200 of flexible display, inverse electrostriction thin layer 230, flexible substrate layer 240 and display element layer 250(include OLED layer 252 and encapsulated layer 254) step method and the first embodiment in make the making conductive layer 120 of the substrate 100 of flexible display, inverse electrostriction thin layer 130, flexible substrate layer 140 and display element layer 150(include OLED layer 152 and encapsulated layer 154) step method roughly the same, do not repeat them here.The difference of the manufacture method of the manufacture method of the flexible display of the present embodiment and the flexible display of the first embodiment is, the inverse electrostriction film on hard substrate has certain pattern, such as, can be circular, square, oval etc.To be made into against electrostriction film and have certain pattern, be to more easily realize being separated of flexible display device and hard substrate.And production method can be when carrying out the technique of processing inverse electrostriction film, mask plate is pre-formed the pattern of needs, thus makes the inverse electrostriction film formed have corresponding pattern.When carrying out device isolation after flexible display device completes, the uniformity that the microcosmic against electrostriction film shakes can be regulated and controled, thus regulation and control flexible display device with each some position stressing conditions in the separation process of hard substrate.Inverse electrostriction film in the present embodiment has square configuration, and the square area of surrounding is large and compare comparatively dense.
In addition, the present invention can according to production line demand and restriction, polylith flexible base, board is incorporated into the large-area making that one piece of hard substrate carries out together, inverse electrostrictive properties is utilized after flexible display element making is complete, flexible display device is separated with hard substrate, volume production effect can be improved like this.In addition, the present invention also can be applied to other any flexible electronic devices.
In sum, the manufacture method of flexible display of the present invention utilizes the mechanical vibration performance of inverse electrostriction film, hard substrate is separated, owing to not adding other decomposed substances between flexible device and hard substrate, so do not have any residuals with flexible base, board.After device isolation, all right Reusability of hard substrate, also provides cost savings greatly.
The above embodiment is only that protection scope of the present invention is not limited thereto in order to absolutely prove the preferred embodiment that the present invention lifts.The equivalent alternative or conversion that those skilled in the art do on basis of the present invention, all within protection scope of the present invention.Protection scope of the present invention is as the criterion with claims.
Claims (12)
1. a preparation method for flexible display device, is characterized in that, comprising:
Conductive layer is formed on the surface of hard substrate;
Inverse electrostriction thin layer is formed on the surface of described conductive layer;
Flexible parent metal is attached at described inverse electrostriction thin-film surface;
Described flexible parent metal makes display element layer;
After prepared by described display element layer, apply alternating current to described conductive layer, utilize the micromechanical against electrostriction film to vibrate, hard substrate is separated with flexible parent metal.
2. the preparation method of flexible display device according to claim 1, is characterized in that, the material of described inverse electrostriction thin layer is polynary system thin-film material, semi-conducting material, dielectric substance or ceramic material.
3. the preparation method of flexible display device according to claim 1, is characterized in that, the material of described inverse electrostriction thin layer is selected from PbO, SiO
2, ZnO
2, TiO
2, LiNbO
3, LiTaO
3, BaTiO
3, BaMO
3, K (Nb, Ta) O
3, ZnO, ZrO
3and SiO
2al
2o
3in one or combination in any.
4. the preparation method of flexible display device according to claim 1, is characterized in that, described inverse electrostriction film is porous membrane, nanometer columnar thin-film or nano-fiber film.
5. the preparation method of flexible display device according to claim 1, is characterized in that, described inverse electrostriction film forms a patterning.
6. the preparation method of flexible display device according to claim 1, is characterized in that, described inverse electrostriction film dimensions is less than conductive layer.
7. the preparation method of flexible display device according to claim 1, it is characterized in that, described inverse electrostriction film adopts radio-frequency magnetron sputter method, solution spin-coating method, pulsed laser deposition, chemical vapour deposition technique or compression method to be formed in the surface of described conductive layer.
8. the preparation method of flexible display device according to claim 1, is characterized in that, the thickness of described inverse electrostriction film is 1 nanometer ~ 10 millimeter.
9. the preparation method of flexible display device according to claim 1, it is characterized in that, after the surface of described conductive layer forms inverse electrostriction thin layer, also comprise: plasma treatment or acidification are carried out to the hard substrate surface being loaded with inverse electrostriction thin layer of preparation.
10. the preparation method of flexible display device according to claim 9, is characterized in that, described plasma is treated to O
2plasma process or H
2plasma process.
The preparation method of 11. flexible display devices according to claim 1, is characterized in that, the voltage of the alternating current applied to described conductive layer is 1 ~ 380V, and frequency is 50HZ ~ 100MHZ.
12. 1 kinds of display devices obtained according to preparation method described in any one in claim 1 ~ 10.
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| CN104698631B (en) * | 2015-03-30 | 2018-07-20 | 京东方科技集团股份有限公司 | A kind of ultra-thin glass bonding structure and its stripping means, display device |
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| CN107564856B (en) * | 2016-07-01 | 2020-02-21 | 上海和辉光电有限公司 | Stripping method of flexible substrate |
| CN107564856A (en) * | 2016-07-01 | 2018-01-09 | 上海和辉光电有限公司 | A kind of stripping means of flexible base board |
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Effective date of registration: 20201214 Address after: No.146 Tianying Road, high tech Zone, Chengdu, Sichuan Province Patentee after: Chengdu CHENXIAN photoelectric Co.,Ltd. Address before: NO.320 Fuchunjiang Road, Optoelectronic Industrial Park, Kunshan Development Zone, Suzhou City, Jiangsu Province Patentee before: Kunshan New Flat Panel Display Technology Center Co.,Ltd. Patentee before: KunShan Go-Visionox Opto-Electronics Co.,Ltd. |