CN104465459A - 晶圆刷胶的工艺 - Google Patents

晶圆刷胶的工艺 Download PDF

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CN104465459A
CN104465459A CN201410638106.4A CN201410638106A CN104465459A CN 104465459 A CN104465459 A CN 104465459A CN 201410638106 A CN201410638106 A CN 201410638106A CN 104465459 A CN104465459 A CN 104465459A
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wafer
film
brush coating
present
glue
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姚兵
王洪辉
黄超
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Nantong Fujitsu Microelectronics Co Ltd
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Nantong Fujitsu Microelectronics Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

本发明涉及一种晶圆刷胶的工艺，包括：在晶圆的底面贴装表面平整的薄膜；吸附贴装于所述晶圆底面的薄膜，以固定所述晶圆；在所述晶圆的顶面刷胶。对晶圆底面先进行贴膜，贴装薄膜后再将其放置刷胶机真空平台上进行作业，可使真空吸附达到正常值，避免圆片的掉落问题。

Description

晶圆刷胶的工艺
技术领域
本发明涉及半导体封装技术领域，尤其涉及晶圆刷胶的工艺。
背景技术
半导体封装过程中，有些产品晶圆需用到刷胶工艺来替代芯片粘接膜(DAF膜)或装片点胶，传统的刷胶制程是直接将底面平整晶圆放置于刷胶机真空吸附平台上进行刷胶作业，如图1，晶圆1的底面平整，在吸附平台2的吸附下，牢固的固定，能够完成在上表面刷胶；当遇到表面为不规则形状芯片的圆片(表面芯片形状为T形，芯片之间间距较大)时，用传统的刷胶制程作业时机器真空吸附平台吸嘴容易吸附在芯片间隙上，造成圆片真空吸附不足，如图2所示，晶圆3的底面不平整，吸附平台对其吸附不够牢固，作业时会出现圆片掉落的问题。
发明内容
在下文中给出关于本发明的简要概述，以便提供关于本发明的某些方面的基本理解。应当理解，这个概述并不是关于本发明的穷举性概述。它并不是意图确定本发明的关键或重要部分，也不是意图限定本发明的范围。其目的仅仅是以简化的形式给出某些概念，以此作为稍后论述的更详细描述的前序。
本发明提供一种晶圆刷胶的工艺，包括：在晶圆的底面贴装表面平整的薄膜；吸附贴装于所述晶圆底面的薄膜，以固定所述晶圆；在所述晶圆的顶面刷胶。
相比于现有技术，对晶圆底面先进行贴膜，贴装薄膜后再将其放置刷胶机真空平台上进行作业，可使真空吸附达到正常值，避免圆片的掉落问题。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为现有技术中底面平整的晶圆进行刷胶时被吸附的状态图；
图2为底面不平整晶圆进行刷胶时被吸附的状态图；
图3为本发明晶圆刷胶工艺的流程图；
图4为经本发明方法处理后底面不平整晶圆进行刷胶时被吸附的状态图。
附图标记：
1-晶圆(底面平整)；2-吸附平台；3-晶圆(底面不平)；4-薄膜。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例是本发明一部分实施例，而不是全部的实施例。在本发明的一个附图或一种实施方式中描述的元素和特征可以与一个或更多个其它附图或实施方式中示出的元素和特征相结合。应当注意，为了清楚的目的，附图和说明中省略了与本发明无关的、本领域普通技术人员已知的部件和处理的表示和描述。基于本发明中的实施例，本领域普通技术人员在没有付出创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。
在本发明以下各实施例中，实施例的序号和/或先后顺序仅仅便于描述，不代表实施例的优劣。对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。
本发明涉及一种晶圆刷胶的工艺，参见图3，包括步骤1，在晶圆3的底面贴装表面平整的薄膜4，参见图4，示出底面贴装有薄膜的晶圆；步骤2，吸附贴装于晶圆3底部的薄膜4，以固定该晶圆(如图4 所示，图4中箭头表示吸附力的方向，一般以真空吸附方式为主，即吸附装置向里“吸气”，以吸附晶圆底面，图中箭头也可以理解为气流的流动方向，如1和图2中同理)；步骤3，在晶圆3的顶面刷胶。可以理解，在晶圆3底面不平整的情形下，采用吸附装置对该晶圆3吸附时，因为不平整的底面使晶圆3不能被牢固的吸附，此时，可以再晶圆3不平整的底面贴装薄膜4，如上述，薄膜4的表面是平整的，这样能使吸附牢靠。可以理解，薄膜4的两面中，一面与晶圆底部贴装，另一面用于吸附，上述“表面平整的薄膜4”就是指用于吸附的表面。
将上述与晶圆底部进行贴装的一面称之为贴装面，该贴装面具有粘性，即通过该具有粘性的贴装面，使薄膜4与晶圆底部粘接完成。既然是用于贴装，可以知晓该贴装面需要朝向晶圆的底部，以实现与晶圆底面的粘接。可以理解，上述粘接就是实现薄膜4与晶圆底面贴装的一种方式。
当然，上述的贴装面具有粘性是一种可选的实施方式，也可以是贴装面本身没有粘性，在贴装前在贴装面上进行刷胶等方式使其具有粘性。
可选的，薄膜4的厚度为150-200um。过薄的薄膜4可能会随晶圆底部呈现凹凸不平的状态，使吸附仍旧不能牢靠，过厚的薄膜4又导致不易于后续薄膜4与晶圆的分离，并且随着厚度的增加重量也有所增加，使吸附的牢靠性降低。
在一种可选的实施方式中，还包括步骤4，在晶圆的顶面刷胶完成后，停止对所述薄膜4的吸附，并将薄膜与所述晶圆的底面分离。即可以理解为，在刷胶的步骤结束后，停止对晶圆的吸附，并且将薄膜从晶圆的底部剥离。
上述薄膜具有一定的粘性，可以使用蓝膜作为薄膜的材料。
最后应说明的是：虽然以上已经详细说明了本发明及其优点，但是应当理解在不超出由所附的权利要求所限定的本发明的精神和范围的情况下可以进行各种改变、替代和变换。而且，本发明的范围不仅限于说明书所描述的过程、设备、手段、方法和步骤的具体实施例。本领域内的普通技术人员从本发明的公开内容将容易理解，根据本发明可以使用执行与在此所述的相应实施例基本相同的功能或者获得与其基本相同的结果的、现有和将来要被开发的过程、设备、手段、方法或者步骤。 因此，所附的权利要求旨在在它们的范围内包括这样的过程、设备、手段、方法或者步骤。

Claims (4)

1.一种晶圆刷胶的工艺，其特征在于，包括：
在晶圆的底面贴装表面平整的薄膜；
吸附贴装于所述晶圆底面的薄膜，以固定所述晶圆；
在所述晶圆的顶面刷胶。
2.根据权利要求1所述的工艺，其特征在于，还包括：
在晶圆的顶面刷胶完成后，停止对所述薄膜的吸附，并将所述薄膜与所述晶圆的底面分离。
3.根据权利要求1所述的工艺，其特征在于，
所述薄膜具有贴装面，所述贴装面具有粘性；
所述贴装面朝向所述晶圆的底面，并与所述底面粘接。
4.根据权利要求1所述的工艺，其特征在于，
所述薄膜的厚度为150-200um。
CN201410638106.4A 2014-11-12 2014-11-12 晶圆刷胶的工艺 Pending CN104465459A (zh)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110102437A (zh) * 2019-01-03 2019-08-09 天通控股股份有限公司 一种超薄晶圆自动刷胶装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1768422A (zh) * 2003-04-10 2006-05-03 松下电器产业株式会社 用于拾取半导体芯片的设备及方法
JP2008028170A (ja) * 2006-07-21 2008-02-07 Taiheiyo Cement Corp 真空吸着装置及びその製造方法
TW200923586A (en) * 2007-08-09 2009-06-01 Lintec Corp Coating method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1768422A (zh) * 2003-04-10 2006-05-03 松下电器产业株式会社 用于拾取半导体芯片的设备及方法
JP2008028170A (ja) * 2006-07-21 2008-02-07 Taiheiyo Cement Corp 真空吸着装置及びその製造方法
TW200923586A (en) * 2007-08-09 2009-06-01 Lintec Corp Coating method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110102437A (zh) * 2019-01-03 2019-08-09 天通控股股份有限公司 一种超薄晶圆自动刷胶装置

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