CN104425310A - Chemical cleaning system - Google Patents
Chemical cleaning system Download PDFInfo
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- CN104425310A CN104425310A CN201310401334.5A CN201310401334A CN104425310A CN 104425310 A CN104425310 A CN 104425310A CN 201310401334 A CN201310401334 A CN 201310401334A CN 104425310 A CN104425310 A CN 104425310A
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- reserve tank
- liquid reserve
- cleaning solution
- chemical cleaning
- pipeline
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention relates to a chemical cleaning system, which comprises a storage tank, a main supply pipeline, a plurality of distribution pipelines and a flow guide; the storage tank is used for containing chemical cleaner; the main supply pipeline is located at the top of the storage tank, and extends into the storage tank from outside the storage tank, and the length of the main supply pipeline extending into the storage tank is adjustable; one end of each distribution pipeline communicates with the main supply pipeline, the other ends of the distribution pipelines extend in a direction toward the sidewall of the storage tank and are higher than the level of the chemical cleaner, the distribution pipelines make an included angle with the main supply pipeline, and the included angle can be adjusted; the flow guide is located on the surface of the internal sidewall of the storage tank, the motion ranges of the ends of the distribution pipelines facing the sidewall of the storage tank are within the coverage of the flow guide, and the distance between the distribution pipelines and the flow guide is within a preset range. The cleaning effect of the chemical cleaning system is enhanced.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly relate to a kind of chemically-cleaning device.
Background technology
In existing semiconductor fabrication process, when after etching technics, the crystal column surface being formed with semiconductor structure easily produces impurity and polymer residue, and these residual impurity and polymer easily impact follow-up treatment process, such as depositing operation.Therefore, in order to get rid of these impurity or polymer, need to carry out cleaning between each processing step.Wet chemical cleaning is one of the method on cleaning wafer surface comparatively conventional at present.
Fig. 1 is the cross-sectional view of a kind of chemically-cleaning device of prior art, comprising:
For holding the liquid reserve tank 100 of chemical cleaning solution, in described liquid reserve tank 100, be contained with cleaning fluid 110;
For the treatment chamber 101 of cleaning wafer, have pending wafer in described treatment chamber 101, described crystal column surface is formed with semiconductor structure;
Be positioned at the liquid-transport pipe-line 102 at described liquid reserve tank 100 top, the other end of described liquid-transport pipe-line 102 is connected with the bottom for the treatment of chamber 101, and the cleaning fluid 110 for treatment chamber 101 being discharged inputs in liquid reserve tank 100;
Be positioned at the output channel 103 bottom described liquid reserve tank 100, the other end of described output channel 103 is connected with the top for the treatment of chamber 101, for the cleaning fluid 110 in liquid reserve tank 100 is delivered to treatment chamber 101, to carry out chemical cleaning technology to the wafer in treatment chamber 101;
The filter 104 be connected with described output channel 103, for removing the impurity in cleaning fluid 110, making the cleaning fluid 110 through filter can enter treatment chamber 101 and continuing on for cleaning wafer;
The heater 105 be connected with described output channel 103, for the temperature making the cleaning fluid 110 through filtering be heated to be suitable for wafer cleaning.
But, adopt after existing chemically-cleaning device cleans, easily make the pattern of the semiconductor structure being formed at crystal column surface bad.
Summary of the invention
The problem that the present invention solves is to provide a kind of chemically-cleaning device, improves the cleaning performance of chemically-cleaning device.
For solving the problem, the invention provides a kind of chemically-cleaning device, comprising: liquid reserve tank, described liquid reserve tank is used for holding chemical cleaning solution; The master being positioned at described liquid reserve tank top send pipeline, and for chemical cleaning solution is delivered to liquid reserve tank inside from liquid reserve tank outside, it is inner that described master send pipeline to pass into described liquid reserve tank from described liquid reserve tank outside, and described master send pipeline to stretch into adjustable length in liquid reserve tank; Be positioned at some separatory pipelines of described liquid reserve tank inside, one end and the described master of described separatory pipeline send pipeline communication, the other end of described separatory pipeline to extend and higher than the liquid level of chemical cleaning solution to the sidewall direction of liquid reserve tank, for sending the chemical cleaning solution in pipeline to branch in some separatory pipelines by main, and in liquid reserve tank, carry chemical cleaning solution by described separatory pipeline, described separatory pipeline and main sending between pipeline have angle, and described corner dimension is adjustable; Be positioned at the drainage system of described liquid reserve tank interior side-wall surface, for the chemical cleaning solution disperseing described separatory pipeline to send, and make described chemical cleaning solution flow in liquid reserve tank by the guiding of described drainage system, described separatory pipeline is towards the scope of activities of liquid reserve tank sidewall one end in the scope that described drainage system covers, and the distance between described separatory pipeline to drainage system is in preset range; Be positioned at the output channel bottom described liquid reserve tank, for the chemical cleaning solution in liquid reserve tank is transferred out described liquid reserve tank.
Optionally, described drainage system comprises: some drainage layers being vertically installed in liquid reserve tank sidewall surfaces, be parallel to each other between some drainage layers, described drainage layer tilts relative to the liquid level of the chemical cleaning solution in liquid reserve tank, forms drainage groove between adjacent drainage layer.
Optionally, described drainage system also comprises: at least one drainage channel being positioned at least one drainage trench groove, and the two ends of described drainage channel are mutually through with twice drainage groove respectively.
Optionally, when the drainage channel quantity being positioned at same drainage groove is greater than 1, the distance between the drainage channel in same drainage groove is 5 centimetres ~ 15 centimetres.
Optionally, the position being positioned at the drainage channel of adjacent twice drainage groove is interlaced.
Optionally, the sidewall of described drainage channel is connected with drainage layer, and the sidewalls orthogonal of described drainage channel is in the sidewall surfaces of liquid reserve tank.
Optionally, described drainage layer surface has some protuberances.
Optionally, the shape of described protuberance is one or more in circle, rectangle, taper.
Optionally, the distance between adjacent two layers drainage layer is 8 centimetres ~ 12 centimetres.
Optionally, described drainage system is around the interior side-wall surface one week of described liquid reserve tank; The bottom of described drainage system is equal to or higher than the liquid level of the chemical cleaning solution in liquid reserve tank.
Optionally, also comprise: the stairs device being positioned at the interior side-wall surface of described liquid reserve tank, the bottom of described stairs device is arranged at the bottom of described liquid reserve tank, the top of described stairs device is less than or equal to the bottom of described drainage system, described stairs device successively decreases step by step to top bottom liquid reserve tank, and the top of described stairs device is greater than or equal to the liquid level of the chemical cleaning solution in liquid reserve tank.
Optionally, described liquid reserve tank is cylindrical, and the quantity of described separatory pipeline is 1 ~ 2 π r/L, and wherein, r is the radius of described liquid reserve tank, and L is that adjacent separatory pipeline extends the distance between one end to drainage system, and angle between some separatory pipelines is equal.
Optionally, described adjacent separatory pipeline is 31.7 centimetres ~ 34.9 centimetres to the drainage system distance L extended between one end.
Optionally, described separatory pipeline is 4.8 centimetres ~ 7.3 centimetres to the predeterminable range of drainage system.
Optionally, the speed exporting chemical cleaning solution to drainage system when described separatory pipeline is faster, and described separatory pipeline is less to the spacing of the liquid level of chemical cleaning solution towards one end of drainage system.
Optionally, described liquid reserve tank comprises inner and outer wall, has closed cavity between described inner and outer wall, has nitrogen in described cavity.
Optionally, described output channel is connected with filter, and described filter is for filtering the impurity removed in chemical cleaning solution.
Optionally, also comprise: treatment chamber, described output channel is connected with described treatment chamber, makes the chemical cleaning solution in liquid reserve tank enter treatment chamber by output channel, to carry out chemical cleaning technology.
Compared with prior art, technical scheme of the present invention has the following advantages:
Described some separatory pipelines are communicated with main one end sending pipeline to stretch into liquid reserve tank, can will branch in some separatory pipelines from the chemical cleaning solution of liquid reserve tank outside conveying as inner by the main pipeline that send, and the other end of described separatory pipeline extends to the sidewall direction of liquid reserve tank, and described separatory pipeline towards the scope of activities of liquid reserve tank sidewall one end in the scope that described drainage system covers, therefore the chemical cleaning solution sent from separatory pipeline can fall in drainage system, make described chemical cleaning solution by the dispersion of described drainage system and guide bottom inflow liquid reserve tank, thus the flow velocity because flowing into the chemical cleaning solution in liquid reserve tank can be avoided excessive and form the problem of a large amount of foam, the impurity such as oxygen are made to be difficult to be mixed into described chemical cleaning solution inner, make chemical cleaning solution pure.And described separatory pipeline is to one end that the sidewall direction of liquid reserve tank extends and higher than the liquid level of chemical cleaning solution, can avoid because described separatory pipeline is immersed in the pollution caused in chemical cleaning solution.Therefore, the chemical cleaning solution being placed in described chemically-cleaning device is pure, cleaning performance good, and the semiconductor structure pattern through cleaning can keep good.
Further, described drainage system comprises: some drainage layers being vertically installed in liquid reserve tank sidewall surfaces, be parallel to each other between some drainage layers, described drainage layer tilts relative to the liquid level of the chemical cleaning solution in liquid reserve tank, forms drainage groove between adjacent drainage layer; Be positioned at least one drainage channel of at least one drainage trench groove, the two ends of described drainage channel are mutually through with twice drainage groove respectively.Described drainage groove and described drainage channel are all for making chemical cleaning solution pass through, therefore, even if speed when described chemical cleaning solution exports described separatory pipeline is larger, after the dispersion and guiding of drainage system, the flow velocity of the chemical cleaning solution in described inflow liquid reserve tank can be slowed down, thus make the flow speed stability of the chemical cleaning solution entered in liquid reserve tank, avoid described chemical cleaning solution to form foam, then ensure that in the chemical cleaning solution in described liquid reserve tank not there is the impurity such as oxygen.
Further, described drainage layer surface has some protuberances, and described protuberance while guiding and disperse chemical cleaning fluid, can filter the solid impurity removed in described chemical cleaning solution, make the chemical cleaning solution that flows into bottom described liquid reserve tank more pure, cleaning performance is better.
Further, described separatory pipeline and main sending between pipeline have angle, and described corner dimension is adjustable, and the length that described master send pipeline to stretch in liquid reserve tank is also adjustable, thus the different in flow rate of chemical cleaning solution is exported for separatory pipeline, length in liquid reserve tank can be stretched into by regulating described separatory pipeline and the main angle between pipeline and the main pipeline that send of sending, reducing described chemical cleaning solution and entering the foam produced in liquid reserve tank; Concrete, make described separatory pipeline to drainage system export the speed of chemical cleaning solution faster time, described separatory pipeline is less to the spacing of the liquid level of chemical cleaning solution towards one end of drainage system, and the chemical cleaning solution entered bottom liquid reserve tank can be suppressed to produce foam.Therefore, no matter how the output speed of described chemical cleaning solution changes, and the chemical cleaning solution entered in liquid reserve tank through drainage system all can not be made to produce foam or be mixed into impurity.
Further, be positioned at the stairs device of the interior side-wall surface of described liquid reserve tank, the bottom of described stairs device is arranged at the bottom of described liquid reserve tank, the top of described stairs device is less than or equal to the bottom of described drainage system, and described stairs device successively decreases step by step to top bottom liquid reserve tank, the chemical cleaning solution then flowed out bottom drainage system flows to the surface of described stairs device, described chemical cleaning solution is further cushioned, can avoid further producing foam in described chemical cleaning solution or being mixed into impurity.
Further, described liquid reserve tank comprises inner and outer wall, between described inner and outer wall, there is closed cavity, in described cavity, there is nitrogen, nitrogen in described cavity can improve the sealing property in liquid reserve tank, avoids liquid reserve tank described in the Air infitration of liquid reserve tank outside inner, further avoid in the chemical cleaning solution in liquid reserve tank and be mixed into oxygen, ensure that the pure of chemical cleaning solution, make the semiconductor structure pattern after cleaning good.
Accompanying drawing explanation
Fig. 1 is the cross-sectional view of a kind of chemically-cleaning device of prior art;
Fig. 2 is schematic diagram when adopting the cleaning fluid containing oxygen to clean the pending wafer in treatment chamber;
Fig. 3 is a kind of cross-sectional view of embodiment of chemically-cleaning device;
Fig. 4 is the cross-sectional view of the chemically-cleaning device of the embodiment of the present invention;
Fig. 5 is the partial structurtes schematic diagram of the drainage system in Fig. 4 along AA ' directional profile.
Embodiment
As stated in the Background Art, adopt after existing chemically-cleaning device cleans, easily make the pattern of the semiconductor structure being formed at crystal column surface bad.
Find through research, due in existing chemically-cleaning device, the sealing of liquid reserve tank is poor, easily make to be mixed into impurity in the cleaning fluid in liquid reserve tank, such as oxygen, causes the cleansing power of cleaning fluid to decline, and make the wafer after cleaning and semicon-ductor structure surface pattern bad.
Concrete, please continue to refer to Fig. 1, residue after the chemically-cleaning device described in Fig. 1 is used for etching metal (such as copper), then adopted chemical cleaning technology is NANO(high speed nitrogen and water) manufacturing process for cleaning, cleaning fluid is at least mixed by the nitrogen passed at a high speed and water, and the nitrogen passed at a high speed can form NH in water
4 +ion, described NH
4 +the impurity that ion produces after can removing etching metal.Owing at least being formed by nitrogen and water in cleaning fluid, therefore, except liquid-transport pipe-line 102 is connected with the top of described liquid reserve tank 100, at least also need from described liquid reserve tank outside by the cleaning fluid 110 in gas pipeline 106 supplying nitrogen to described liquid reserve tank 100, to supply the NH that cleaning fluid 110 internal cause runs off through cleaning
4 +ion.
But these connection with described liquid reserve tank 100 easily reduce the sealing property of described liquid reserve tank 100 for the pipeline (gas pipeline 106 and liquid-transport pipe-line 102) inputting gas or liquid, thus make the oxygen in air be mixed into described liquid reserve tank 100 inside.And, in order to improve the cycle rate of the cleaning fluid 110 between liquid reserve tank 100 and treatment chamber 101, the flow velocity discharging cleaning fluid 110 from liquid-transport pipe-line 102 in liquid reserve tank 100 is larger, the cleaning fluid 110 be discharged in liquid reserve tank 100 from liquid-transport pipe-line 102 is easily caused to produce a large amount of foams, it is inner that the described foam oxygen that can carry in liquid reserve tank 100 enters cleaning fluid 110, and oxygen is dissolved in cleaning fluid 110.When the described cleaning fluid 110 containing oxygen enters treatment chamber 101 and cleans pending wafer, easily cause the pattern Quality Down of pending crystal column surface.
Specifically please refer to Fig. 2, Fig. 2 is schematic diagram when cleaning with the pending wafer 120 in the 110 pairs for the treatment of chamber 101 of the cleaning fluid containing oxygen.Described pending wafer 120 surface has the metal interconnect structure 121 through photoetching process and etching technics, and the material of described metal interconnect structure 121 is copper; Due in a lithographic process, the diverse location on same pending wafer 120 surface is easily caused to have electrical potential difference, therefore, have first area I and second area II on described pending wafer 120 surface, the electromotive force of described first area I is higher than the electromotive force of second area II.When in described cleaning fluid 110 with oxygen time, oxygen can make the copper on metal interconnect structure 121 surface be oxidized to copper ion; Because the electromotive force of first area I is higher than the electromotive force of second area II, described copper ion is easily subject to the effect of electric field force and moves to second area II, and be reduced to copper at second area II and be deposited on metal interconnect structure 121 surface, thus cause metal interconnect structure 121 surface of second area II higher than metal interconnect structure 121 surface of first area I.Therefore, through the cleaning of the described cleaning fluid 110 containing oxygen, be formed at the Quality Down of metal interconnect structure 121 surface topography on pending wafer 120 surface, be unfavorable for formed chip or the stable performance of semiconductor device.
When liquid-transport pipe-line discharges cleaning fluid in liquid reserve tank, a large amount of bubble-related issues are produced in order to solve, a kind of chemically-cleaning device is as shown in Figure 3 suggested, pass into liquid reserve tank 100 by liquid-transport pipe-line 102a inner, and described liquid-transport pipe-line 102a stretches into bottom cleaning fluid 110; Wherein, described in stretch into liquid reserve tank 100 inside liquid-transport pipe-line 102a sidewall surfaces there is some through holes 130, described through hole 130 can make the cleaning fluid 110 in liquid-transport pipe-line 102 export.Described liquid-transport pipe-line 102a can reduce and form a large amount of gas foam in cleaning fluid 110; But, because described liquid-transport pipe-line 102a stretches into bottom cleaning fluid 110, easily cause the chemical concentrations of the surface of the cleaning fluid 110 in liquid reserve tank 100 and bottom inconsistent, be unfavorable for the control to cleaning fluid 110 concentration exporting liquid reserve tank 100; And the concentration bottom cleaning fluid 110 is higher, easily make chemical substance in cleaning fluid at liquid reserve tank 100 bottom deposit; In addition, because described liquid-transport pipe-line 102a impregnated in cleaning fluid 110 for a long time, easily cause the corrosion in described woven hose 102a road, thus add the impurity of the cleaning fluid 110 be in liquid reserve tank 100, be unfavorable for the cleaning to pending wafer.
In order to solve the problem, the present invention proposes a kind of chemically-cleaning device, comprising: for holding the liquid reserve tank of chemical cleaning solution; The master being positioned at described liquid reserve tank top send pipeline, and it is inner that described master send pipeline to pass into described liquid reserve tank from described liquid reserve tank outside, and described master send pipeline to stretch into adjustable length in liquid reserve tank; Be positioned at some separatory pipelines of described liquid reserve tank inside, one end and the described master of described separatory pipeline send pipeline communication, the other end of described separatory pipeline extends to the sidewall direction of liquid reserve tank, for sending the chemical cleaning solution in pipeline to branch in some separatory pipelines by main, described separatory pipeline and main sending between pipeline have angle, and described corner dimension is adjustable; Be positioned at the drainage system of described liquid reserve tank interior side-wall surface, for the chemical cleaning solution disperseing described separatory pipeline to send, and described chemical cleaning solution flowed in liquid reserve tank by the guiding of described drainage system.
Wherein, described some separatory pipelines are communicated with main one end sending pipeline to stretch into liquid reserve tank, can will branch in some separatory pipelines from the chemical cleaning solution of liquid reserve tank outside conveying as inner by the main pipeline that send, and the other end of described separatory pipeline extends to the sidewall direction of liquid reserve tank, and described separatory pipeline towards the scope of activities of liquid reserve tank sidewall one end in the scope that described drainage system covers, therefore the chemical cleaning solution sent from separatory pipeline can fall in drainage system, make described chemical cleaning solution by the dispersion of described drainage system and guide bottom inflow liquid reserve tank, thus the flow velocity because flowing into the chemical cleaning solution in liquid reserve tank can be avoided excessive and form the problem of a large amount of foam, the impurity such as oxygen are made to be difficult to be mixed into described chemical cleaning solution inner, make chemical cleaning solution pure.And described separatory pipeline is to one end that the sidewall direction of liquid reserve tank extends and higher than the liquid level of chemical cleaning solution, can avoid because described separatory pipeline is immersed in the pollution caused in chemical cleaning solution.Therefore, the chemical cleaning solution being placed in described chemically-cleaning device is pure, cleaning performance good, and the semiconductor structure pattern through cleaning can keep good.
For enabling above-mentioned purpose of the present invention, feature and advantage more become apparent, and are described in detail specific embodiments of the invention below in conjunction with accompanying drawing.
Fig. 4 to Fig. 5 is the structural representation of the chemically-cleaning device of the embodiment of the present invention.
Please refer to Fig. 4, described chemically-cleaning device comprises:
Liquid reserve tank 200, described liquid reserve tank 200 is for holding chemical cleaning solution 201;
The master being positioned at described liquid reserve tank 200 top send pipeline 202, inner for chemical cleaning solution to be delivered to liquid reserve tank 200 from liquid reserve tank 200 outside, it is inner that described master send pipeline 202 to pass into described liquid reserve tank 200 from described liquid reserve tank 200 outside, and described master send pipeline 202 to stretch into adjustable length in liquid reserve tank 200;
Be positioned at some separatory pipelines 203 of described liquid reserve tank 200 inside, one end and the described master of described separatory pipeline 203 send pipeline 202 to be communicated with, the other end of described separatory pipeline 203 to extend and higher than the liquid level of chemical cleaning solution 201 to the sidewall direction of liquid reserve tank 200, for sending the chemical cleaning solution in pipeline 200 to branch in some separatory pipelines 203 by main, and in liquid reserve tank 200, carry chemical cleaning solution 201 by described separatory pipeline 203, described separatory pipeline 203 and main sending between pipeline 202 have angle, and described corner dimension is adjustable;
Be positioned at the drainage system 204 of described liquid reserve tank 200 interior side-wall surface, for the chemical cleaning solution disperseing described separatory pipeline 203 to send, and make described chemical cleaning solution flow in liquid reserve tank 200 by the guiding of described drainage system 204, described separatory pipeline 203 is towards the scope of activities of liquid reserve tank 200 sidewall one end in the scope that described drainage system 204 covers, and described separatory pipeline 203 has predeterminable range between drainage system 204;
Be positioned at the output channel 205 bottom described liquid reserve tank 200, for the chemical cleaning solution 201 in liquid reserve tank 200 is transferred out described liquid reserve tank 200.
It should be noted that, in the present embodiment, also comprise treatment chamber (not shown) in described chemically-cleaning device, described treatment chamber is for placing pending wafer, and described pending wafer needs to carry out chemical cleaning technology.In the present embodiment, described pending crystal column surface is formed with metal interconnect structure, and described metal interconnect structure is formed by etching technics; Because the existing etching technics for metal easily produces accessory substance or polymer at pending wafer and metal interconnect structure surface, therefore need after the etching process, chemical cleaning technology is carried out to described metal interconnect structure.Metal interconnect structure material in the present embodiment is copper, and the chemical cleaning solution 201 for chemical cleaning technology comprises water and is mixed into the nitrogen in water, and described nitrogen can form NH in water
4 +ion, described NH
4 +ion can remove etching copper after the accessory substance that remains or polymer.
Described master send pipeline 202 to be connected with described treatment chamber, for being delivered in treatment chamber in described liquid reserve tank 200 through the chemical cleaning solution 201 of cleaning.Secondly, described output channel 205 is also connected with described treatment chamber, make the chemical cleaning solution 201 in liquid reserve tank 200 enter treatment chamber by output channel 205, the chemical cleaning solution 201 exported by described output channel 205 carries out chemical cleaning technology for the pending wafer be opposite in treatment chamber.
At least one filter 207 is connected with in described output channel 205, described filter 207 is for removing impurity, pollutant, the oxygen in the chemical cleaning solution 201 that exports in liquid reserve tank 200, and the chemical cleaning solution 201 filtered through described filter 207 is imported in processing unit and carries out chemical cleaning technology.In addition, in described output channel 205, heater (not shown) is also connected with, the temperature of described heater for making the temperature of the chemical cleaning solution 201 be delivered in processing unit reach suitable cleaning.
Described liquid reserve tank 200 is for holding chemical cleaning solution 201.In the present embodiment, described liquid reserve tank 200 is cylindrical.Chemical cleaning solution 201 in liquid reserve tank 200 is transported in treatment chamber to carry out cleaning after filtering, and be transferred back in described liquid reserve tank 200 through the chemical cleaning solution 201 of cleaning in described treatment chamber, make the chemical cleaning solution 201 between liquid reserve tank 200 and treatment chamber form circulation.
In the present embodiment, described chemically-cleaning device also comprises gas pipeline (not shown), it is inner that described gas pipeline enters described liquid reserve tank 200 from described liquid reserve tank 200 outside by the top of described liquid reserve tank 200, and below the liquid level passing into the chemical cleaning solution 201 in liquid reserve tank; Described gas pipeline is used for passing into nitrogen in the chemical cleaning solution 201 in liquid reserve tank 200, and described nitrogen can produce NH with aquatic in chemical cleaning solution
4 +ion, thus the NH replenishing that treatment chamber is consumed
4 +ion.
Although described liquid reserve tank 200 is enclosed construction, but send pipeline 202 and gas pipeline all to need to pass into inside from described liquid reserve tank 200 outside due to described master, therefore described liquid reserve tank 200 is difficult to seal completely, easily make liquid reserve tank 200 described in Air infitration inner, make, in liquid reserve tank 200, there is oxygen; And once described oxygen is mixed into after in described chemical cleaning solution 201, described chemical cleaning solution 201 easily causes damage to the pattern of the metal interconnect structure of pending crystal column surface.Therefore, in the chemical cleaning solution 201 that the chemically-cleaning device in the present embodiment can avoid oxygen to be mixed in liquid reserve tank 200, ensure that the pending crystal column surface pattern through cleaning is good, and the cleansing power of chemical cleaning solution 201 is good.
In the present embodiment, described liquid reserve tank 200 comprises inwall 200a and outer wall 200b, has closed cavity 200c between described inwall 200a and outer wall 200b, has nitrogen in described cavity 200c; Make nitrogen pressure in described cavity 200c higher than atmospheric pressure, then described nitrogen can suppress the air of liquid reserve tank 200 outside to enter in liquid reserve tank 200, thus decrease the oxygen content on chemical cleaning solution 201 surface in liquid reserve tank 200, ensure that the pure of chemical cleaning solution 201.
Described master send pipeline 202 to stretch into described inner one end of liquid reserve tank 200 to be communicated with some separatory pipelines 203, make to be entered respectively in some separatory pipelines 203 by the main chemical cleaning solution 201 sending pipeline 202 to enter liquid reserve tank 200 inside, and to export in drainage system 204 to one end that liquid reserve tank 200 sidewall extends from described separatory pipeline 203.In the present embodiment, described separatory pipeline 203 is 4.8 centimetres ~ 7.3 centimetres to the predeterminable range that has of drainage system 204.Because the distance between described separatory pipeline 203 to drainage system 204 is less, therefore described chemical cleaning solution 201 is delivered in the process of drainage system from separatory pipeline, be difficult to evoke foam, therefore, it is possible to it is inner to avoid foam oxygen to be brought into chemical cleaning solution 201, make described chemical cleaning solution 201 can keep pure.In addition, the port plane of one end that described separatory pipeline 203 extends to drainage system 204 direction matches with described drainage system surface, and the chemical cleaning solution 201 that separatory pipeline 203 is exported can enter in drainage system 204.
The quantity of described separatory pipeline 203 is 1 ~ 2 π r/L, and wherein, r is the radius of described liquid reserve tank 200, and L is that adjacent separatory pipeline 203 extends the distance between one end to drainage system 204; Preferably, described adjacent separatory pipeline 203 is 31.7 centimetres ~ 34.9 centimetres to the drainage system 204 distance L extended between one end, the chemical cleaning solution 201 that then adjacent separatory pipeline 203 exports can not influence each other and foam generated, can ensure again that the speed exporting chemical cleaning solution 201 is larger as far as possible simultaneously; Therefore, when the radius of described liquid reserve tank 200 is larger, the quantity of described separatory pipeline 203 is more.In addition, the angle between some separatory pipelines 203 is equal, and one end height that some separatory pipelines 203 extend to liquid reserve tank 200 sidewall is identical, and namely some separating tube roads 203 are uniformly distributed, and chemical cleaning solution 201 can be evenly delivered in drainage system 204.It should be noted that, one end that described master send pipeline 202 to stretch into liquid reserve tank 200 is airtight, is only communicated with some separatory pipelines 203, and chemical cleaning solution 201 is exported by separatory pipeline 203 completely.
Described separatory pipeline 203 and main sending between pipeline 202 have angle, and described separatory pipeline 203 and master send between pipeline 202 and can be dynamically connected, and make described corner dimension adjustable.In addition, the described master length of sending pipeline 201 to stretch in liquid reserve tank 200 is also adjustable.Therefore, one end height that described separatory pipeline 203 extends to drainage system 204 can adjust.It should be noted that; no matter described separatory pipeline 203 and mainly send the angle between pipeline 202 how to adjust; the scope of activities of the one end all needing described separatory pipeline 203 to extend to drainage system 204 in the scope of described drainage system 204, to guarantee that chemical cleaning solution 201 is fully delivered in drainage system 204.And no matter described separatory pipeline 203 send pipeline 202 how to adjust with main, described no matter described separatory pipeline 203 send pipeline 202 all higher than the liquid level of chemical cleaning solution 201 with main.
Length in liquid reserve tank 200 is stretched into by regulating separatory pipeline 203 and the main angle between pipeline 202 and the main pipeline 202 that send of sending, separatory pipeline 203 can be adjusted to the distance between one end that drainage system 204 extends and the liquid level of chemical cleaning solution 201, and, described distance changes according to the flow velocity of chemical cleaning solution 201, produces foam after entering liquid reserve tank 200 to suppress chemical cleaning solution 201.Concrete, the speed exporting chemical cleaning solution to drainage system 204 when described separatory pipeline 203 is faster, then make separatory pipeline 203 less to the spacing of the liquid level of chemical cleaning solution 201 towards one end of drainage system 204, therefore, no matter how the output speed of described chemical cleaning solution 201 changes, and the chemical cleaning solution 201 entered in liquid reserve tank 200 all can not be made to produce foam.
In the present embodiment, stairs device 206 is also provided with in described liquid reserve tank 200, described stairs device 206 is positioned at the interior side-wall surface of liquid reserve tank 200, the bottom of described stairs device 206 is positioned at the bottom of described liquid reserve tank 200, the top of described stairs device 206 is less than or equal to the bottom of described drainage system 204, and, described stairs device 206 successively decreases step by step to top bottom liquid reserve tank 200, and the top of described stairs device 206 is greater than or equal to the liquid level of the chemical cleaning solution 201 in liquid reserve tank 200.
Chemical cleaning solution 201 enters in described drainage system 204 after separatory pipeline 203 exports, and the surface of described stairs device 206 is flow to from the bottom of drainage system 204, the chemical cleaning solution 201 entered bottom liquid reserve tank 200 can further be cushioned, thus avoid further producing foam in chemical cleaning solution 201, and then ensure that the pure of chemical cleaning solution 201.
It should be noted that, the material of described drainage system 204 and stairs device 206 is the material do not reacted with chemical cleaning solution 201, and described drainage system 204 can be consistent with the material of liquid reserve tank 200 with the material of stairs device 206; Or, described drainage system 204 or stairs device 206 adopt polymeric material, described polymeric material comprises one or more combinations in polyvinyl chloride, polypropylene, acidproof phenolic aldehyde, poly-four ethene, described polymeric material is corrosion-resistant, and drainage system 204 or stairs device 206 can be made in chemical cleaning solution 201 to keep stable chemical nature.
Described drainage system 204 is around the interior side-wall surface one week of described liquid reserve tank 200, and the bottom of described drainage system 204 is equal to or higher than the liquid level of the chemical cleaning solution 201 in liquid reserve tank 200.Described drainage system 204 can disperse and cushion the chemical cleaning solution 201 exported from separatory pipeline 203, foam is produced to prevent the chemical cleaning solution 201 entered in liquid reserve tank 200, and then avoiding described foam, the gas of ullage to be brought into chemical cleaning solution 201 inner, thus ensure the cleansing power of chemical cleaning solution 201.Describe in detail below with reference to accompanying drawing.
Please refer to Fig. 5, Fig. 5 is the partial structurtes schematic diagram of the drainage system in Fig. 4 along AA ' directional profile.
Described drainage system 204 comprises: some drainage layer 204a being vertically installed in liquid reserve tank 200 sidewall surfaces, be parallel to each other between some drainage layer 204a, described drainage layer 204a tilts relative to the liquid level of the chemical cleaning solution 201 in liquid reserve tank 200, forms drainage groove 204b between adjacent drainage layer 204a.Wherein, the distance between adjacent two layers drainage layer 204a is 8 centimetres ~ 12 centimetres, and namely the width of described drainage groove 204b is 8 centimetres ~ 12 centimetres.In other embodiments, described drainage layer 204a can also have angle relative to liquid reserve tank 200 sidewall surfaces.
Secondly, also comprise in described drainage system 204: the two ends of at least one drainage channel 204c being positioned at least one drainage trench groove 204b, described drainage channel 204c are mutually through with twice drainage groove 204b respectively.In the present embodiment, in some drainage groove 204b, all there is some drainage channel 204c.It should be noted that, the position of the drainage channel 204c in adjacent twice drainage groove 204b interlocks, thus it is longer to make to enter the path that the chemical cleaning solution 201 in drainage system 204 passes through, then more be conducive to dispersion and cushion described chemical cleaning solution 201, avoiding producing foam in described chemical cleaning solution 201.
Wherein, when the drainage channel 204c quantity being positioned at same drainage groove 204b is greater than 1, the spacing being positioned at the adjacent drainage channel 204c of same drainage groove 204b is 5 centimetres ~ 15 centimetres.It should be noted that, when the perimeter side wall length that is longer or described drainage groove 204b of described liquid reserve tank 200 is longer, then the quantity being positioned at this drainage groove 204b is more.
In the present embodiment, the sidewall of described drainage channel 204c is connected with drainage layer 204a, and the sidewalls orthogonal of described drainage channel 204c is in the sidewall surfaces of liquid reserve tank 200, namely the opening of described drainage groove 204b and drainage channel 204c is towards separatory pipeline 203, and the chemical cleaning solution 201 that separatory pipeline 203 is exported can enter in drainage groove 204b and drainage channel 204c.In the present embodiment, described drainage channel 204c is vertical with the liquid level direction of chemical cleaning solution 201.In other embodiments, described drainage channel 204c can also tilt relative to the liquid level of chemical cleaning solution 201.
Described drainage groove 204b and described drainage channel 204c is all for making chemical cleaning solution 201 pass through, the chemical cleaning solution 201 exported from separatory pipeline 203 is disperseed by described drainage groove 204b and described drainage channel 204c and after guiding, flow velocity can be slowed down, make to flow into the flow speed stability bottom liquid reserve tank 200, thus efficiently avoid formation foam in chemical cleaning solution 201, then ensure that the chemical cleaning solution 201 in described liquid reserve tank 200 is pure, the cleansing power of described chemical cleaning solution 201 is good, after cleaning pending wafer with described chemical cleaning solution 201, the pattern of described pending crystal column surface is good.
In the present embodiment, described drainage layer 204a surface also has some protuberance (not shown), and described protuberance is uniformly distributed in each drainage layer 204 surface, and the shape of described protuberance is one or more in circle, rectangle, taper.When described protuberance can make chemical cleaning solution 201 flow through drainage layer 204 surface, the solid impurity in described chemical cleaning solution 201 is stoped to pass through, namely described protuberance plays a role in filtering, thus makes the chemical cleaning solution 201 that flows into bottom described liquid reserve tank 200 more pure, and cleaning performance is better.
In the chemically-cleaning device of the present embodiment, described some separatory pipelines are communicated with main one end sending pipeline to stretch into liquid reserve tank, can will branch in some separatory pipelines from the chemical cleaning solution of liquid reserve tank outside conveying as inner by the main pipeline that send, and the other end of described separatory pipeline extends to the sidewall direction of liquid reserve tank, and described separatory pipeline towards the scope of activities of liquid reserve tank sidewall one end in the scope that described drainage system covers, therefore the chemical cleaning solution sent from separatory pipeline can fall in drainage system, make described chemical cleaning solution by the dispersion of described drainage system and guide bottom inflow liquid reserve tank, thus the flow velocity because flowing into the chemical cleaning solution in liquid reserve tank can be avoided excessive and form the problem of a large amount of foam, the impurity such as oxygen are made to be difficult to be mixed into described chemical cleaning solution inner, make chemical cleaning solution pure.And described separatory pipeline is to one end that the sidewall direction of liquid reserve tank extends and higher than the liquid level of chemical cleaning solution, can avoid because described separatory pipeline is immersed in the pollution caused in chemical cleaning solution.Therefore, the chemical cleaning solution being placed in described chemically-cleaning device is pure, cleaning performance good, and the semiconductor structure pattern through cleaning can keep good.
Although the present invention discloses as above, the present invention is not defined in this.Any those skilled in the art, without departing from the spirit and scope of the present invention, all can make various changes or modifications, and therefore protection scope of the present invention should be as the criterion with claim limited range.
Claims (18)
1. a chemically-cleaning device, is characterized in that, comprising:
Liquid reserve tank, described liquid reserve tank is used for holding chemical cleaning solution;
The master being positioned at described liquid reserve tank top send pipeline, and for chemical cleaning solution is delivered to liquid reserve tank inside from liquid reserve tank outside, it is inner that described master send pipeline to pass into described liquid reserve tank from described liquid reserve tank outside, and described master send pipeline to stretch into adjustable length in liquid reserve tank;
Be positioned at some separatory pipelines of described liquid reserve tank inside, one end and the described master of described separatory pipeline send pipeline communication, the other end of described separatory pipeline to extend and higher than the liquid level of chemical cleaning solution to the sidewall direction of liquid reserve tank, for sending the chemical cleaning solution in pipeline to branch in some separatory pipelines by main, and in liquid reserve tank, carry chemical cleaning solution by described separatory pipeline, described separatory pipeline and main sending between pipeline have angle, and described corner dimension is adjustable;
Be positioned at the drainage system of described liquid reserve tank interior side-wall surface, for the chemical cleaning solution disperseing described separatory pipeline to send, and make described chemical cleaning solution flow in liquid reserve tank by the guiding of described drainage system, described separatory pipeline is towards the scope of activities of liquid reserve tank sidewall one end in the scope that described drainage system covers, and described separatory pipeline has predeterminable range to drainage system;
Be positioned at the output channel bottom described liquid reserve tank, for the chemical cleaning solution in liquid reserve tank is transferred out described liquid reserve tank.
2. chemically-cleaning device as claimed in claim 1, it is characterized in that, described drainage system comprises: some drainage layers being vertically installed in liquid reserve tank sidewall surfaces, be parallel to each other between some drainage layers, described drainage layer tilts relative to the liquid level of the chemical cleaning solution in liquid reserve tank, forms drainage groove between adjacent drainage layer.
3. chemically-cleaning device as claimed in claim 2, it is characterized in that, described drainage system also comprises: at least one drainage channel being positioned at least one drainage trench groove, and the two ends of described drainage channel are mutually through with twice drainage groove respectively.
4. chemically-cleaning device as claimed in claim 3, it is characterized in that, when the drainage channel quantity being positioned at same drainage groove is greater than 1, the distance between the drainage channel in same drainage groove is 5 centimetres ~ 15 centimetres.
5. chemically-cleaning device as claimed in claim 3, it is characterized in that, the position being positioned at the drainage channel of adjacent twice drainage groove is interlaced.
6. chemically-cleaning device as claimed in claim 3, it is characterized in that, the sidewall of described drainage channel is connected with drainage layer, and the sidewalls orthogonal of described drainage channel is in the sidewall surfaces of liquid reserve tank.
7. chemically-cleaning device as claimed in claim 2, it is characterized in that, described drainage layer surface has some protuberances.
8. chemically-cleaning device as claimed in claim 7, is characterized in that, the shape of described protuberance is one or more in circle, rectangle, taper.
9. chemically-cleaning device as claimed in claim 2, it is characterized in that, the distance between adjacent two layers drainage layer is 8 centimetres ~ 12 centimetres.
10. chemically-cleaning device as claimed in claim 1, is characterized in that, described drainage system is around the interior side-wall surface one week of described liquid reserve tank; The bottom of described drainage system is equal to or higher than the liquid level of the chemical cleaning solution in liquid reserve tank.
11. chemically-cleaning devices as claimed in claim 1, it is characterized in that, also comprise: the stairs device being positioned at the interior side-wall surface of described liquid reserve tank, the bottom of described stairs device is arranged at the bottom of described liquid reserve tank, the top of described stairs device is less than or equal to the bottom of described drainage system, described stairs device successively decreases step by step to top bottom liquid reserve tank, and the top of described stairs device is greater than or equal to the liquid level of the chemical cleaning solution in liquid reserve tank.
12. chemically-cleaning devices as claimed in claim 1, it is characterized in that, described liquid reserve tank is cylindrical, the quantity of described separatory pipeline is 1 ~ 2 π r/L, wherein, r is the radius of described liquid reserve tank, and L is that adjacent separatory pipeline extends the distance between one end to drainage system, and angle between some separatory pipelines is equal.
13. chemically-cleaning devices as claimed in claim 12, it is characterized in that, described adjacent separatory pipeline is 31.7 centimetres ~ 34.9 centimetres to the drainage system distance L extended between one end.
14. chemically-cleaning devices as claimed in claim 1, it is characterized in that, described separatory pipeline is 4.8 centimetres ~ 7.3 centimetres to the predeterminable range of drainage system.
15. chemically-cleaning devices as claimed in claim 1, is characterized in that, the speed exporting chemical cleaning solution to drainage system when described separatory pipeline is faster, and described separatory pipeline is less to the spacing of the liquid level of chemical cleaning solution towards one end of drainage system.
16. chemically-cleaning devices as claimed in claim 1, it is characterized in that, described liquid reserve tank comprises inner and outer wall, has closed cavity between described inner and outer wall, has nitrogen in described cavity.
17. chemically-cleaning devices as claimed in claim 1, it is characterized in that, described output channel is connected with filter, and described filter is for filtering the impurity removed in chemical cleaning solution.
18. chemically-cleaning devices as claimed in claim 1, it is characterized in that, also comprise: treatment chamber, described output channel is connected with described treatment chamber, makes the chemical cleaning solution in liquid reserve tank enter treatment chamber by output channel, to carry out chemical cleaning technology.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1379447A (en) * | 2001-04-10 | 2002-11-13 | 华邦电子股份有限公司 | Chip washing equipment preventing blocking of pipe wall |
| CN201353576Y (en) * | 2009-02-20 | 2009-12-02 | 无锡威孚奥特凯姆精密机械有限公司 | Liquid collecting device for repeatedly using cleaning fluid |
| CN201782331U (en) * | 2010-08-06 | 2011-04-06 | 马如夫 | Cutter frame condiment basket and rice bin combined cabinet |
| CN202576251U (en) * | 2012-04-20 | 2012-12-05 | 成都中住光纤有限公司 | Optical fiber coating device for reducing bubbles of optical fiber coating |
-
2013
- 2013-09-05 CN CN201310401334.5A patent/CN104425310B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1379447A (en) * | 2001-04-10 | 2002-11-13 | 华邦电子股份有限公司 | Chip washing equipment preventing blocking of pipe wall |
| CN201353576Y (en) * | 2009-02-20 | 2009-12-02 | 无锡威孚奥特凯姆精密机械有限公司 | Liquid collecting device for repeatedly using cleaning fluid |
| CN201782331U (en) * | 2010-08-06 | 2011-04-06 | 马如夫 | Cutter frame condiment basket and rice bin combined cabinet |
| CN202576251U (en) * | 2012-04-20 | 2012-12-05 | 成都中住光纤有限公司 | Optical fiber coating device for reducing bubbles of optical fiber coating |
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