CN104412316B - 包含非离子性表面活性剂及含有至少一个酸基团的芳族化合物的化学机械抛光(cmp)组合物 - Google Patents

包含非离子性表面活性剂及含有至少一个酸基团的芳族化合物的化学机械抛光(cmp)组合物 Download PDF

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Publication number
CN104412316B
CN104412316B CN201380036022.7A CN201380036022A CN104412316B CN 104412316 B CN104412316 B CN 104412316B CN 201380036022 A CN201380036022 A CN 201380036022A CN 104412316 B CN104412316 B CN 104412316B
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weight
cmp composition
cmp
composition
acid
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CN104412316A (zh
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R·赖夏特
Y·李
M·劳特尔
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BASF SE
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BASF SE
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN201380036022.7A 2012-07-06 2013-06-27 包含非离子性表面活性剂及含有至少一个酸基团的芳族化合物的化学机械抛光(cmp)组合物 Active CN104412316B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP12175333.9 2012-07-06
EP12175333.9A EP2682441A1 (en) 2012-07-06 2012-07-06 A chemical mechanical polishing (CMP) composition comprising a non-ionic surfactant and an aromatic compound comprising at least one acid group
PCT/IB2013/055273 WO2014006546A2 (en) 2012-07-06 2013-06-27 A chemical mechanical polishing (cmp) composition comprising a non-ionic surfactant and an aromatic compound comprising at least one acid group

Publications (2)

Publication Number Publication Date
CN104412316A CN104412316A (zh) 2015-03-11
CN104412316B true CN104412316B (zh) 2018-04-20

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CN201380036022.7A Active CN104412316B (zh) 2012-07-06 2013-06-27 包含非离子性表面活性剂及含有至少一个酸基团的芳族化合物的化学机械抛光(cmp)组合物

Country Status (10)

Country Link
EP (2) EP2682441A1 (https=)
JP (1) JP6185578B2 (https=)
KR (1) KR102147073B1 (https=)
CN (1) CN104412316B (https=)
IL (1) IL236194B (https=)
MY (1) MY170292A (https=)
RU (1) RU2636511C2 (https=)
SG (1) SG11201408785VA (https=)
TW (1) TWI601794B (https=)
WO (1) WO2014006546A2 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI775722B (zh) * 2014-12-22 2022-09-01 德商巴斯夫歐洲公司 化學機械拋光（ｃｍｐ）組成物用於拋光含鈷及/或鈷合金之基材的用途
CN109415597B (zh) * 2016-06-22 2021-08-17 嘉柏微电子材料股份公司 包含含胺的表面活性剂的抛光组合物
CN109251672B (zh) * 2017-07-13 2022-02-18 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
US10170335B1 (en) 2017-09-21 2019-01-01 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method for cobalt
CN113122143B (zh) * 2019-12-31 2024-03-08 安集微电子（上海）有限公司 一种化学机械抛光液及其在铜抛光中的应用
CN113122144A (zh) * 2019-12-31 2021-07-16 安集微电子（上海）有限公司 一种化学机械抛光液
CN112801973B (zh) * 2021-01-27 2022-06-14 山东大学 一种金刚石线锯表面磨粒分布均匀性评价方法
JP2022131199A (ja) * 2021-02-26 2022-09-07 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法
KR20250066153A (ko) 2023-11-06 2025-05-13 에스케이엔펄스 주식회사 반도체 공정용 연마 조성물 및 이를 이용한 기판의 제조방법
KR20250066152A (ko) 2023-11-06 2025-05-13 에스케이엔펄스 주식회사 반도체 공정용 연마 조성물 및 이를 이용한 기판의 제조방법

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5738800A (en) * 1996-09-27 1998-04-14 Rodel, Inc. Composition and method for polishing a composite of silica and silicon nitride
US6646348B1 (en) * 2000-07-05 2003-11-11 Cabot Microelectronics Corporation Silane containing polishing composition for CMP
JP3563017B2 (ja) * 2000-07-19 2004-09-08 ロデール・ニッタ株式会社 研磨組成物、研磨組成物の製造方法及びポリシング方法
US6936543B2 (en) * 2002-06-07 2005-08-30 Cabot Microelectronics Corporation CMP method utilizing amphiphilic nonionic surfactants
US20040175942A1 (en) 2003-01-03 2004-09-09 Chang Song Y. Composition and method used for chemical mechanical planarization of metals
US7514363B2 (en) * 2003-10-23 2009-04-07 Dupont Air Products Nanomaterials Llc Chemical-mechanical planarization composition having benzenesulfonic acid and per-compound oxidizing agents, and associated method for use
US20050126588A1 (en) * 2003-11-04 2005-06-16 Carter Melvin K. Chemical mechanical polishing slurries and cleaners containing salicylic acid as a corrosion inhibitor
JP2006100538A (ja) * 2004-09-29 2006-04-13 Fuji Photo Film Co Ltd 研磨用組成物及びそれを用いた研磨方法
JP2006179845A (ja) * 2004-11-26 2006-07-06 Fuji Photo Film Co Ltd 金属用研磨液及び研磨方法
US7678702B2 (en) * 2005-08-31 2010-03-16 Air Products And Chemicals, Inc. CMP composition of boron surface-modified abrasive and nitro-substituted sulfonic acid and method of use
JP2007103463A (ja) * 2005-09-30 2007-04-19 Sumitomo Electric Ind Ltd ポリシングスラリー、ＧａｘＩｎ１−ｘＡｓｙＰ１−ｙ結晶の表面処理方法およびＧａｘＩｎ１−ｘＡｓｙＰ１−ｙ結晶基板
JP2007194593A (ja) * 2005-12-20 2007-08-02 Fujifilm Corp 金属用研磨液及びそれを用いた研磨方法
WO2007102138A2 (en) * 2007-01-02 2007-09-13 Freescale Semiconductor, Inc. Barrier slurry compositions and barrier cmp methods
JP2007227670A (ja) * 2006-02-23 2007-09-06 Fujifilm Corp 化学的機械的研磨方法
US20080148649A1 (en) * 2006-12-21 2008-06-26 Zhendong Liu Ruthenium-barrier polishing slurry
CN101016438A (zh) * 2007-02-09 2007-08-15 孙韬 碱性计算机硬盘抛光液及其生产方法
JP2008288398A (ja) * 2007-05-18 2008-11-27 Nippon Chem Ind Co Ltd 半導体ウェハーの研磨用組成物、その製造方法、及び研磨加工方法
US20090032765A1 (en) 2007-08-03 2009-02-05 Jinru Bian Selective barrier polishing slurry
WO2009056491A1 (en) * 2007-10-29 2009-05-07 Basf Se Cmp slurry composition and process for planarizing copper containing surfaces provided with a diffusion barrier layer
JP5314329B2 (ja) 2008-06-12 2013-10-16 富士フイルム株式会社 研磨液
SG10201401549SA (en) * 2009-06-22 2014-06-27 Cabot Microelectronics Corp CMP Compositions And Methods For Suppressing Polysilicon Removal Rates
JP2011171689A (ja) * 2009-07-07 2011-09-01 Kao Corp シリコンウエハ用研磨液組成物
CN102597142B (zh) * 2009-11-13 2014-09-17 巴斯夫欧洲公司 包含无机粒子与聚合物粒子的化学机械抛光(cmp)组合物
US8273142B2 (en) * 2010-09-02 2012-09-25 Cabot Microelectronics Corporation Silicon polishing compositions with high rate and low defectivity

Also Published As

Publication number Publication date
KR102147073B1 (ko) 2020-08-25
TWI601794B (zh) 2017-10-11
KR20150036422A (ko) 2015-04-07
RU2015103812A (ru) 2016-08-27
EP2682441A1 (en) 2014-01-08
EP2870599B1 (en) 2018-10-17
JP6185578B2 (ja) 2017-08-23
WO2014006546A3 (en) 2014-02-27
RU2636511C2 (ru) 2017-11-23
CN104412316A (zh) 2015-03-11
IL236194A0 (en) 2015-01-29
TW201406889A (zh) 2014-02-16
WO2014006546A2 (en) 2014-01-09
SG11201408785VA (en) 2015-01-29
MY170292A (en) 2019-07-17
EP2870599A2 (en) 2015-05-13
JP2015530420A (ja) 2015-10-15
EP2870599A4 (en) 2016-03-30
IL236194B (en) 2020-07-30

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