KR102147073B1 - 비-이온성 계면활성제 및 하나 이상의 산 기를 포함하는 방향족 화합물을 포함하는 화학 기계 연마 조성물 - Google Patents

비-이온성 계면활성제 및 하나 이상의 산 기를 포함하는 방향족 화합물을 포함하는 화학 기계 연마 조성물 Download PDF

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KR102147073B1
KR102147073B1 KR1020157003200A KR20157003200A KR102147073B1 KR 102147073 B1 KR102147073 B1 KR 102147073B1 KR 1020157003200 A KR1020157003200 A KR 1020157003200A KR 20157003200 A KR20157003200 A KR 20157003200A KR 102147073 B1 KR102147073 B1 KR 102147073B1
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weight
acid
group
cmp composition
cmp
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KR20150036422A (ko
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로베르트 라이하르트
유주오 리
미하엘 라우터
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바스프 에스이
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H01L21/30625—
    • H01L21/3212—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020157003200A 2012-07-06 2013-06-27 비-이온성 계면활성제 및 하나 이상의 산 기를 포함하는 방향족 화합물을 포함하는 화학 기계 연마 조성물 Active KR102147073B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP12175333.9 2012-07-06
EP12175333.9A EP2682441A1 (en) 2012-07-06 2012-07-06 A chemical mechanical polishing (CMP) composition comprising a non-ionic surfactant and an aromatic compound comprising at least one acid group
PCT/IB2013/055273 WO2014006546A2 (en) 2012-07-06 2013-06-27 A chemical mechanical polishing (cmp) composition comprising a non-ionic surfactant and an aromatic compound comprising at least one acid group

Publications (2)

Publication Number Publication Date
KR20150036422A KR20150036422A (ko) 2015-04-07
KR102147073B1 true KR102147073B1 (ko) 2020-08-25

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KR1020157003200A Active KR102147073B1 (ko) 2012-07-06 2013-06-27 비-이온성 계면활성제 및 하나 이상의 산 기를 포함하는 방향족 화합물을 포함하는 화학 기계 연마 조성물

Country Status (10)

Country Link
EP (2) EP2682441A1 (https=)
JP (1) JP6185578B2 (https=)
KR (1) KR102147073B1 (https=)
CN (1) CN104412316B (https=)
IL (1) IL236194B (https=)
MY (1) MY170292A (https=)
RU (1) RU2636511C2 (https=)
SG (1) SG11201408785VA (https=)
TW (1) TWI601794B (https=)
WO (1) WO2014006546A2 (https=)

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TWI775722B (zh) * 2014-12-22 2022-09-01 德商巴斯夫歐洲公司 化學機械拋光（ｃｍｐ）組成物用於拋光含鈷及/或鈷合金之基材的用途
CN109415597B (zh) * 2016-06-22 2021-08-17 嘉柏微电子材料股份公司 包含含胺的表面活性剂的抛光组合物
CN109251672B (zh) * 2017-07-13 2022-02-18 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
US10170335B1 (en) 2017-09-21 2019-01-01 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method for cobalt
CN113122143B (zh) * 2019-12-31 2024-03-08 安集微电子（上海）有限公司 一种化学机械抛光液及其在铜抛光中的应用
CN113122144A (zh) * 2019-12-31 2021-07-16 安集微电子（上海）有限公司 一种化学机械抛光液
CN112801973B (zh) * 2021-01-27 2022-06-14 山东大学 一种金刚石线锯表面磨粒分布均匀性评价方法
JP2022131199A (ja) * 2021-02-26 2022-09-07 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法
KR20250066153A (ko) 2023-11-06 2025-05-13 에스케이엔펄스 주식회사 반도체 공정용 연마 조성물 및 이를 이용한 기판의 제조방법
KR20250066152A (ko) 2023-11-06 2025-05-13 에스케이엔펄스 주식회사 반도체 공정용 연마 조성물 및 이를 이용한 기판의 제조방법

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US5738800A (en) * 1996-09-27 1998-04-14 Rodel, Inc. Composition and method for polishing a composite of silica and silicon nitride
US6646348B1 (en) * 2000-07-05 2003-11-11 Cabot Microelectronics Corporation Silane containing polishing composition for CMP
JP3563017B2 (ja) * 2000-07-19 2004-09-08 ロデール・ニッタ株式会社 研磨組成物、研磨組成物の製造方法及びポリシング方法
US6936543B2 (en) * 2002-06-07 2005-08-30 Cabot Microelectronics Corporation CMP method utilizing amphiphilic nonionic surfactants
US20040175942A1 (en) 2003-01-03 2004-09-09 Chang Song Y. Composition and method used for chemical mechanical planarization of metals
US7514363B2 (en) * 2003-10-23 2009-04-07 Dupont Air Products Nanomaterials Llc Chemical-mechanical planarization composition having benzenesulfonic acid and per-compound oxidizing agents, and associated method for use
US20050126588A1 (en) * 2003-11-04 2005-06-16 Carter Melvin K. Chemical mechanical polishing slurries and cleaners containing salicylic acid as a corrosion inhibitor
JP2006100538A (ja) * 2004-09-29 2006-04-13 Fuji Photo Film Co Ltd 研磨用組成物及びそれを用いた研磨方法
JP2006179845A (ja) * 2004-11-26 2006-07-06 Fuji Photo Film Co Ltd 金属用研磨液及び研磨方法
US7678702B2 (en) * 2005-08-31 2010-03-16 Air Products And Chemicals, Inc. CMP composition of boron surface-modified abrasive and nitro-substituted sulfonic acid and method of use
JP2007103463A (ja) * 2005-09-30 2007-04-19 Sumitomo Electric Ind Ltd ポリシングスラリー、ＧａｘＩｎ１−ｘＡｓｙＰ１−ｙ結晶の表面処理方法およびＧａｘＩｎ１−ｘＡｓｙＰ１−ｙ結晶基板
JP2007194593A (ja) * 2005-12-20 2007-08-02 Fujifilm Corp 金属用研磨液及びそれを用いた研磨方法
WO2007102138A2 (en) * 2007-01-02 2007-09-13 Freescale Semiconductor, Inc. Barrier slurry compositions and barrier cmp methods
JP2007227670A (ja) * 2006-02-23 2007-09-06 Fujifilm Corp 化学的機械的研磨方法
US20080148649A1 (en) * 2006-12-21 2008-06-26 Zhendong Liu Ruthenium-barrier polishing slurry
CN101016438A (zh) * 2007-02-09 2007-08-15 孙韬 碱性计算机硬盘抛光液及其生产方法
JP2008288398A (ja) * 2007-05-18 2008-11-27 Nippon Chem Ind Co Ltd 半導体ウェハーの研磨用組成物、その製造方法、及び研磨加工方法
US20090032765A1 (en) 2007-08-03 2009-02-05 Jinru Bian Selective barrier polishing slurry
WO2009056491A1 (en) * 2007-10-29 2009-05-07 Basf Se Cmp slurry composition and process for planarizing copper containing surfaces provided with a diffusion barrier layer
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JP2011171689A (ja) * 2009-07-07 2011-09-01 Kao Corp シリコンウエハ用研磨液組成物
CN102597142B (zh) * 2009-11-13 2014-09-17 巴斯夫欧洲公司 包含无机粒子与聚合物粒子的化学机械抛光(cmp)组合物
US8273142B2 (en) * 2010-09-02 2012-09-25 Cabot Microelectronics Corporation Silicon polishing compositions with high rate and low defectivity

Also Published As

Publication number Publication date
TWI601794B (zh) 2017-10-11
CN104412316B (zh) 2018-04-20
KR20150036422A (ko) 2015-04-07
RU2015103812A (ru) 2016-08-27
EP2682441A1 (en) 2014-01-08
EP2870599B1 (en) 2018-10-17
JP6185578B2 (ja) 2017-08-23
WO2014006546A3 (en) 2014-02-27
RU2636511C2 (ru) 2017-11-23
CN104412316A (zh) 2015-03-11
IL236194A0 (en) 2015-01-29
TW201406889A (zh) 2014-02-16
WO2014006546A2 (en) 2014-01-09
SG11201408785VA (en) 2015-01-29
MY170292A (en) 2019-07-17
EP2870599A2 (en) 2015-05-13
JP2015530420A (ja) 2015-10-15
EP2870599A4 (en) 2016-03-30
IL236194B (en) 2020-07-30

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