CN104409595B - Vertical light emitting diode (LED) with current blocking structures and manufacturing method thereof - Google Patents
Vertical light emitting diode (LED) with current blocking structures and manufacturing method thereof Download PDFInfo
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- CN104409595B CN104409595B CN201410728364.1A CN201410728364A CN104409595B CN 104409595 B CN104409595 B CN 104409595B CN 201410728364 A CN201410728364 A CN 201410728364A CN 104409595 B CN104409595 B CN 104409595B
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The embodiment of the invention discloses a vertical light emitting diode (LED) with current blocking structures. The vertical LED comprises a metal substrate positioned on the bottom layer, a seed layer positioned on the surface of the metal substrate, a reflection layer positioned on the surface of the seed layer, a plurality of first current blocking structures positioned on the surface of the reflection layer, an epitaxial layer, electrode welding rods, a second current blocking structure positioned on the surface of the epitaxial layer as well as an electrode welding plate, wherein the epitaxial layer is positioned on one side away from the reflection layer, of each first current blocking structure; the epitaxial layer completely covers the first current blocking structures and the reflection layer; the electrode welding rods are positioned on the surface of the epitaxial layer and are positioned right above the first current blocking structures along the direction from the metal substrate to the first current blocking structures; the projection of the second current blocking structure and the projections of the first current blocking structures on the metal substrate are not overlapped; the electrode welding plate is positioned on the surface of the second current blocking structure. The structural strength of the epitaxial layer part corresponding to the welding plate area is enhanced; during subsequent packaging and bonding, the epitaxial layer corresponding to the electrode welding plate is not easy to break, and the packaging yield is improved.
Description
Technical field
The present invention relates to technical field of semiconductor device, more particularly to a kind of vertical light-emitting with current blocking structures
Diode and its manufacture method.
Background technology
In recent years, developing rapidly with semiconductor technology, light emitting diode is used as a kind of important semiconductor devices
Achieve significant progress.Wherein, GaN base light emitting has optoelectronic transformation efficiency height, life-span length, pollution-free, response speed
Fast and low in energy consumption the advantages of, apply in the numerous areas such as display and illumination.The nineties in 20th century, the epitaxy technology of GaN material is obtained
Breakthrough was obtained, even to this day, the light emitting diode of vertical stratification becomes the focus of LED researchs.Vertical structure light-emitting
Diode manufacture process needs to carry out substrate transfer, and, in being distributed up and down, electric current flows vertically through epitaxial layer, with biography for N electrode and P electrode
The positive assembling structure LED of system is compared, with preferable current injection efficiency and heat conductivility.
The N electrode of light emitting diode with vertical structure is normally at exiting surface top, can block and absorb the light of luminescent layer, from
And reduce the light extraction efficiency of light emitting diode with vertical structure.Prior art is sent out to solve this problem in vertical stratification
Current blocking structures are increased in optical diode, as shown in figure 1, prior art has the pole of vertical light-emitting two of current blocking structures
Pipe includes：Metal substrate 11, Seed Layer 12, reflecting layer 13, current blocking structures 14, p-type GaN layer 15, active layer 16, N-type GaN
Layer 17, N-type electrode welding rod 18 and N-type electrode pad 19, wherein p-type GaN layer 15, active layer 16 and N-type GaN layer 17 is constituted vertically
The epitaxial layer of light emitting diode.Insert between the p-type GaN layer 15 and this p-type contact metal layer of reflecting layer 13 of epitaxial layer exhausted
Edge material (such as silica, silicon nitride) is welded as current blocking structures 14, current blocking structures 14 with the N-type electrode of N electrode
Bar 18 and N-type electrode pad 19 are roughly the same in downward vertical location of projection and size.Such a configuration reduce P layer electric currents
Vertical extension so that the P layer electric currents in the region be able to it is extending transversely, so as to substantially improve the impact of N electrode shading and extinction.
But, the N-type GaN layer structural strength of the above-mentioned vertical LED with current blocking structures is relatively low, unfavorable
In packaging and routing, yield of devices is reduced.
The content of the invention
It is an object of the invention to provide a kind of vertical LED with current blocking structures and its manufacture method, can
Have in the vertical LED of current blocking structures that N-type GaN layer structural strength is low with effectively solving, be unfavorable for packaging and routing
Problem so that yield of devices is significantly improved.
To solve above-mentioned technical problem, the invention provides following technical scheme：
A kind of vertical LED with current blocking structures, including：Positioned at the metal substrate of bottom；Positioned at described
The Seed Layer of metal substrate surface；Positioned at the reflecting layer of the seed layer surface；Positioned at multiple the first of the reflection layer surface
Current blocking structures；Deviate from the epitaxial layer of the reflecting layer side positioned at first current blocking structures, the epitaxial layer is complete
First current blocking structures described in all standing and the reflecting layer；Positioned at the electrode welding rod of the epi-layer surface, the electrode
Welding rod is located at first current blocking structures along the surface of the metal substrate to the first current blocking structures direction；
Positioned at the second current blocking structures of the epi-layer surface, second current blocking structures and first current countercheck
Projection of the structure in the metal substrate is not overlapped；Positioned at the electrode pad on the second current blocking structures surface.
Preferably, projection of first current blocking structures with the electrode welding rod in the metal substrate is weighed completely
Close.
Preferably, projection of second current blocking structures with the electrode pad in the metal substrate is weighed completely
Close.
Preferably, the epitaxial layer includes：Positioned at first current blocking structures away from the of the reflecting layer side
One gallium nitride layer, first gallium nitride layer is completely covered first current blocking structures and the reflecting layer；Positioned at described
The active layer on the first gallium nitride layer surface；Positioned at the second gallium nitride layer of the active layer surface；Wherein, first gallium nitride
Layer is different from the doping type of second gallium nitride layer.
Preferably, first gallium nitride layer is p-type gallium nitride layer, and second gallium nitride layer is n type gallium nitride layer；
Or, first gallium nitride layer is n type gallium nitride layer, second gallium nitride layer is p-type gallium nitride layer.
Preferably, also include：Diffusion impervious layer between the reflecting layer and the Seed Layer.
A kind of preparation method of the vertical LED with current blocking structures, is applied to described in any of the above-described
Vertical LED with current blocking structures, the preparation method includes：Epitaxial layer is formed on growth base substrate；Institute
State epitaxial layer and form multiple first current blocking structures away from the growth base substrate side；In first current blocking structures
Reflecting layer is formed away from the side surface of the epitaxial layer one, the reflecting layer is completely covered first current blocking structures and described
Epitaxial layer；Seed Layer is formed in the reflection layer surface；The growth base substrate is removed, in the Seed Layer reflection is deviated from
The side of layer forms metal substrate；The resistance of the second electric current is formed in the epitaxial layer away from the surface of first current blocking structures
Gear structure, projection of second current blocking structures with first current blocking structures in the metal substrate is not handed over
It is folded；Deviate from the table surface forming electrode welding rod of first current blocking structures in the epitaxial layer, the electrode welding rod is located at institute
The first current blocking structures are stated along the surface of the metal substrate to the first current blocking structures direction；Described second
Current blocking structures surface forms electrode pad.
Preferably, the formation epitaxial layer on growth base substrate includes：The second gallium nitride is formed on growth base substrate
Layer；Active layer is formed on the second gallium nitride layer surface；The first gallium nitride layer is formed in the active layer surface；Wherein, institute
State the first gallium nitride layer different from the doping type of second gallium nitride layer.
Preferably, the second current blocking structures are formed away from the surface of first current blocking structures in the epitaxial layer
Also include before：Roughening treatment is carried out away from the surface of first current blocking structures to the epitaxial layer.
Preferably, also included before the seed layer surface is formed and reflected：Formed in the seed layer surface and spread
Barrier layer.
Preferably, the formation process of the diffusion impervious layer is magnetron sputtering technique.
Preferably, the growth base substrate is Sapphire Substrate.
Compared with prior art, above-mentioned technical proposal has advantages below：
The vertical LED with current blocking structures that the embodiment of the present invention is provided, including the first current blocking
Structure and the second current blocking structures, wherein, electrode welding rod is located at the first current blocking structures along metal substrate to the first electric current
The surface in barrier structure direction, i.e. the first current blocking structures are corresponding with electrode welding rod；Electrode pad is located at the second electric current
Barrier structure surface, i.e. the second current blocking structures are corresponding with electrode pad.As can be seen here, in embodiments of the present invention, electricity
Pad corresponding second current blocking structures in pole are located at epitaxial layer and deviate from the side surface of the reflecting layer one, and the second current countercheck
Projection of the structure with the first current blocking structures on the metallic substrate is not overlapped, i.e., electrode pad along electrode pad to reflecting layer direction
The corresponding epitaxial layer region of projection and reflecting layer between do not have as current blocking structures insulating materials, thus making electricity
During the pad of pole, it is not necessary to etch the corresponding epitaxial layer in electrode pad region, so that the corresponding epitaxial layer of electrode pad portion
Segment thickness is constant, strengthens the structural strength of the corresponding epitaxial layer portion of welding disking area, in follow-up packaging and routing, electrode weldering
The corresponding epitaxial layer of disk not easy fracture, improves encapsulation yield.
Description of the drawings
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
The accompanying drawing to be used needed for having technology description is briefly described, it should be apparent that, drawings in the following description are the present invention
Some embodiments, for those of ordinary skill in the art, on the premise of not paying creative work, can be with basis
These accompanying drawings obtain other accompanying drawings.
Fig. 1 has the vertical LED structural representation of current blocking structures for prior art；
The knot of the vertical LED with current blocking structures that Fig. 2 is provided by a kind of specific embodiment of the invention
Structure schematic diagram；
The vertical LED with current blocking structures that Fig. 3 is provided by a kind of specific embodiment of the invention
Electrode top view；
Fig. 4 is electric by corresponding with Fig. 3 vertical LED first that a kind of specific embodiment of the invention is provided
Flow resistance keeps off structure top view；
Fig. 5 is electric by corresponding with Fig. 3 vertical LED second that a kind of specific embodiment of the invention is provided
Flow resistance keeps off structure top view；
The vertical LED and its epitaxial layer structure that Fig. 6 is provided by a kind of specific embodiment of the invention is illustrated
Figure；
A kind of preparation method flow process of vertical LED with current blocking structures that Fig. 7 is provided for the present invention
Figure.
Specific embodiment
Just as described in the background section, the N of the vertical LED with current blocking structures of the prior art
Type GaN layer structural strength is relatively low, is unfavorable for packaging and routing, reduces yield of devices.
Inventor's research finds, this is because making the pole of vertical light-emitting two with current blocking structures in prior art
Guan Shi, in particular by Sapphire Substrate as the vertical LED for growing base substrate, can between sapphire and GaN material
Lattice mismatch phenomenon can occurs, in order to eliminate this lattice mismatch phenomenon, needs first grow on sapphire a layer defects compared with
Many cushions, are then further continued for growing the relatively low low doped layer of doping content, last regrowth heavily doped layer.Making N-type
During electrode, what surface directly spilt after laser lift-off is the more cushion of defect and resistance is higher, doping content is relatively low
Low doped layer, and good Ohmic contact needs metal to realize with heavily doped layer, so that etching N-type GaN layer is straight
To heavily doped layer, the thickness of N-type GaN layer is this reduced, reduce the structural strength of N-type GaN layer, and in follow-up encapsulation process,
Needs carry out routing on N electrode pad, and this is easy for making N-type GaN layer rupture, so as to reduce yield of devices.
On the basis of based on the studies above, a kind of vertical light-emitting with current blocking structures is embodiments provided
Diode, including：
Positioned at the metal substrate of bottom；
Positioned at the Seed Layer of metal substrate surface；
Positioned at the reflecting layer of seed layer surface；
Positioned at multiple first current blocking structures of reflection layer surface；
Deviate from the epitaxial layer of reflecting layer side positioned at the first current blocking structures, epitaxial layer is completely covered the first current blocking
Structure and reflecting layer；
Positioned at the electrode welding rod of epi-layer surface, electrode welding rod is located at the first current blocking structures along metal substrate to first
The surface in current blocking structures direction；
Positioned at the second current blocking structures of epi-layer surface, the second current blocking structures and the first current blocking structures exist
Projection in metal substrate is not overlapped；
Positioned at the electrode pad on the second current blocking structures surface.
The scheme that the embodiment of the present invention is provided, when electrode pad is made, it is not necessary to etch the corresponding epitaxial layer of pad
Part, so that the corresponding epitaxial layer portion thickness of electrode pad portion is constant, strengthens the corresponding epitaxial layer of welding disking area
Partial structural strength, is conducive to follow-up packaging and routing, improves encapsulation yield.
In order that the above objects, features and advantages of the present invention can become apparent from it is understandable, below in conjunction with the accompanying drawings to this
Bright specific embodiment is described in detail.
Elaborate detail in order to fully understand the present invention in the following description.But the present invention can with it is various not
It is same as alternate manner described here to implement, those skilled in the art can do class in the case of without prejudice to intension of the present invention
Like popularization.Therefore the present invention is not limited by following public specific embodiment.
Refer to Fig. 2, vertically the sending out with current blocking structures that Fig. 2 is provided by a kind of specific embodiment of the invention
Optical diode structural representation.
In a kind of specific embodiment of the present invention, the vertical light-emitting with current blocking structures provided by the present invention
Diode includes：Metal substrate 21, positioned at the Seed Layer 22 on the surface of metal substrate 21, positioned at the reflecting layer on the surface of Seed Layer 22
23, positioned at first current blocking structures 24 on the surface of reflecting layer 23, the first current blocking structures 24 cover the surface of reflecting layer 23
A part, positioned at the epitaxial layer 25 of the first current blocking structures 24 and the top of reflecting layer 23, it is electric that epitaxial layer 25 is completely covered first
Stream barrier structure 24 and reflecting layer 23, positioned at second current blocking structures 26 on the surface of epitaxial layer 25, the second current blocking structures
26 and first projection of the current blocking structures 24 in metal substrate 21 do not overlap, positioned at the electrode welding rod on the surface of epitaxial layer 25
27, electrode welding rod 27 is located at the first just going up along the direction of the current blocking structures of metal substrate 21 to the first 24 of current blocking structures 24
Side, i.e. electrode welding rod 27 are located at the first current blocking structures 24 in the upright projection position on the surface of epitaxial layer 25, electric positioned at second
The electrode pad 28 on stream barrier structure 26 surface.
Because first current blocking structures 24 corresponding with electrode welding rod 27 are located between epitaxial layer 25 and reflecting layer 23,
When making electrode welding rod 27, need to etch away the corresponding part of epitaxial layer 25 of electrode welding rod 27, and electrode pad 28 corresponding the
Two current blocking structures 26 are located at the surface of epitaxial layer 25, it is not necessary to etch the corresponding part of epitaxial layer 25 of electrode pad 28, i.e.,
Good Ohmic contact can be realized, so that the thickness of the part is constant, the structure of the welding disking area of epitaxial layer 25 is strengthened
Intensity, in follow-up packaging and routing, reduces the fracture probability of epitaxial layer, improves encapsulation yield.
On the basis of above-described embodiment, in order that the more preferable work of vertical LED with current blocking structures
Make, one embodiment of the invention has done a series of improvement to the first current blocking structures and the second current blocking structures, other portions
Divide and refer to above-described embodiment, will not be described here.
Refer to Fig. 3, Fig. 4 and Fig. 5, Fig. 3 by a kind of specific embodiment of the invention provide with current countercheck
The electrode top view of the vertical LED of structure；Fig. 4 by a kind of specific embodiment of the invention provide it is corresponding with Fig. 3
Vertical LED the first current blocking structures top view；Fig. 5 provided by a kind of specific embodiment of the invention with
Fig. 3 corresponding vertical LED the second current blocking structures top view.
In a kind of specific embodiment of the present invention, the first current blocking structures and electrode welding rod are on the metallic substrate
Projection is completely superposed, and projection of second current blocking structures with electrode pad on the metallic substrate is completely superposed.
As shown in figure 3, electrode includes electrode welding rod 311 and electrode pad 312, on the basis of any of the above-described embodiment,
In a preferred embodiment of the invention, as shown in figure 4, electrode welding rod 311 is in gold in the first current blocking structures 33 and Fig. 3
Projection on category substrate is completely superposed.On the basis of any of the above-described embodiment, in another preferred embodiment of the invention,
As shown in figure 5, projection of second current blocking structures 32 with electrode pad in Fig. 3 312 on the metallic substrate is completely superposed, but this
Invention is not limited this, is specifically depended on the circumstances.
After first current blocking structures are completely superposed with the projection on the metallic substrate of electrode welding rod, the shape in overall structure
Into complete current spread barrier layer, so as to play a part of to optimize current expansion.
In the present embodiment, above-mentioned vertical LED is vertically placed, metal substrate is located at lowermost layer, the resistance of the first electric current
The area of gear structure and the second current blocking structures in the vertical direction vertical plane is complementary, the combination of its projected area with it is complete
Whole electrode is identical, and this complementary structure current blocking structures serve the current blocking structures effect of unilateral gross area, i.e., originally
The combination for inventing the first current blocking structures and the second current blocking structures serves prior art vertical LED electric current
The effect of barrier structure, i.e. electric current just can transversely spread under the electrodes or be distributed rather than directly along electrode to reflection after injecting
Layer direction is down spread or is distributed, and electric current is weakened whereby from poly- effect.Again because the second current blocking structures are located at epitaxial layer table
Face, it is not necessary to etch the corresponding epitaxial layer region of the second current blocking structures so that epitaxial layer structure intensity is increased, favorably
In follow-up packaging and routing, encapsulation yield is improved.
It should be noted that Fig. 3, Fig. 4 and Fig. 5 are not the top view of correspondence Fig. 2, in embodiments of the present invention, not
The particular number and position of electrode welding rod and electrode pad are limited, it is only necessary to ensure electrode welding rod and the first current countercheck
Structure is corresponding, and electrode pad and the second current blocking structures are corresponding, specifically depend on the circumstances.
Fig. 6 is refer to, vertical LED and its epitaxial layer that Fig. 6 is provided by a kind of specific embodiment of the invention
Structural representation.
On the basis of any of the above-described embodiment, in a kind of specific embodiment of the present invention, epitaxial layer includes：It is located at
First current blocking structures deviate from the first gallium nitride layer of reflecting layer side, and the first gallium nitride layer is completely covered the first current blocking
Structure and reflecting layer；Positioned at the active layer on the first gallium nitride layer surface；Positioned at the second gallium nitride layer of active layer surface；Wherein,
First gallium nitride layer is different from the doping type of the second gallium nitride layer.
In one embodiment of the invention, the first gallium nitride layer is p-type gallium nitride layer, then the second gallium nitride layer is N-type
Gallium nitride layer；In another embodiment of the present invention, the first gallium nitride layer is n type gallium nitride layer, then the second gallium nitride layer is P
Type gallium nitride layer, the present invention is not limited this, is specifically depended on the circumstances.
As shown in fig. 6, the bottom of epitaxial layer 25 is the first gallium nitride layer 251, the first gallium nitride layer 251 is completely covered the
One current blocking structures 24 and reflecting layer 23, active layer 252 is located at the upper surface of the first gallium nitride layer 251, the second gallium nitride layer 253
Positioned at the upper surface of active layer 252.
Active layer both sides are respectively the first gallium nitride layer and the second gallium nitride layer, the first gallium nitride layer and the second gallium nitride layer
Doping type it is different.Active layer is typically the narrow band gap P-type semiconductor that thickness is 0.1～0.3 μm, its wider band with both sides
The N-type semiconductor of gap and P-type semiconductor form N-P-P double-heterostructures, and external power to P-N junction injects electronics, the electronics in N areas and
The hole in P areas enters active layer, due to potential barrier of heterogenous junction effect, into active layer electronics and hole be closed in active area
It is interior, population inversion distribution is formed, produce spontaneous radiation when the electronics Jing transition of these population inversion distributions is with hole-recombination
Light so that active layer produces radiant light.
It is described with current blocking structures in one embodiment of the present of invention on the basis of above-mentioned all embodiments
Light emitting diode increased one layer of diffusion impervious layer also between reflecting layer and Seed Layer.
In one embodiment of the invention, the material of the Seed Layer is metal, and metal typically all has good leading
Electrically, but some metal materials are easy to be diffused in epitaxial layer semiconductor, have a strong impact on the performance of device, thus in seed
The diffusion of metal during one layer of diffusion impervious layer is covered between layer and reflecting layer to prevent Seed Layer.
Accordingly, in an embodiment of the invention, a kind of vertical light-emitting two with current blocking structures is additionally provided
The preparation method of pole pipe, is applied to the vertical LED with current blocking structures that above-mentioned all embodiments are provided.
Refer to Fig. 7, a kind of preparation method flow process of vertical LED with current blocking structures that Fig. 7 is provided for the present invention
Figure, the preparation method includes：
Step 10：Epitaxial layer is formed on growth base substrate.
Because Sapphire Substrate production technology is ripe, device quality is preferable；Sapphire good stability, can be used in high temperature life
In long environment；Sapphire high mechanical strength, it is easy to process and clean, therefore in a specific embodiment of the invention, the life
Long base substrate is preferably Sapphire Substrate, but the present invention is not limited this, in other embodiments of the invention, the indigo plant
Jewel substrate can also adopt the material such as silicon and carborundum, and this is not limited, and specifically depend on the circumstances.
In one embodiment of the invention, forming epitaxial layer on growth base substrate includes：The shape on growth base substrate
Into the second gallium nitride layer；Active layer is formed on the second gallium nitride layer surface；Active layer surface formed the first gallium nitride layer, first
Gallium nitride layer is completely covered the first current blocking structures and reflecting layer；Wherein, the first gallium nitride layer and the second gallium nitride layer are mixed
Miscellany type is different.
In one embodiment of the invention, the first gallium nitride layer of growth is p-type gallium nitride layer, and the second of growth nitrogenizes
Gallium layer is n type gallium nitride layer；In another embodiment of the present invention, the first gallium nitride layer of growth is n type gallium nitride layer, then
Second gallium nitride layer of growth is p-type gallium nitride layer, and the present invention is not limited this, specifically depended on the circumstances.
Step 11：Multiple first current blocking structures are formed away from growth base substrate side in epitaxial layer, the present invention's
In one embodiment, the formation process of the first current blocking structures is preferably plasma reinforced chemical vapour deposition technique, but this
Invention is not limited this, is specifically depended on the circumstances.
Step 12：Reflecting layer is formed away from the side surface of epitaxial layer one in the first current blocking structures, reflecting layer is completely covered
First current blocking structures and the epitaxial layer.It should be noted that the reflecting layer in the present invention is also ohmic contact layer, i.e. institute
State reflecting layer not only to have there is reflection light function but also there is Ohmic contact function, it is preferred that in one embodiment of the invention, instead
The formation process for penetrating layer is preferably electron beam evaporation process or magnetron sputtering technique, it is furthermore preferred that reflector material is preferably
Between a kind of material or different materials in nickel, aluminium, cadmium, gold, silver, copper, titanium, platinum, palladium combine alloy, but the present invention to this simultaneously
Do not limit, specifically depend on the circumstances.
Step 13：Seed Layer is formed in reflection layer surface.Preferably, in one embodiment of the invention, Seed Layer
Formation process is preferably electron beam evaporation process or magnetron sputtering technique, it is furthermore preferred that seed layer materials be nickel, aluminium, cadmium,
The alloy combined between a kind of material or different materials in gold, silver, copper, titanium, tantalum, tin, but the present invention do not limited this,
Specifically depend on the circumstances.
It should be noted that on the basis of any of the above-described embodiment, in one embodiment of the invention, described with electricity
One layer of diffusion impervious layer is yet forms both between the reflecting layer of the light emitting diode of stream barrier structure and Seed Layer, diffusion impervious layer
Formation process is preferably magnetron sputtering technique.In the present embodiment, one layer of diffusion barrier is formed between Seed Layer and reflecting layer
Layer can effectively prevent the diffusion of Seed Layer metal.And the advantage for forming diffusion impervious layer using magnetron sputtering technique is deposition
Speed is fast, damage little to film layer, and film purity height, the compactness for sputtering acquisition is good, good into film uniformity, it is easy to accomplish industry
Change.
Also, it should be noted that when diffusion impervious layer is formed, can also be using electron beam evaporation process, the present invention
It is preferred that magnetron sputtering technique, does not limit this, specifically depend on the circumstances.
Step 14：Above-mentioned growth base substrate is removed, metal substrate is formed away from the side in reflecting layer in Seed Layer.Need
It is bright, remove growth base substrate and formed after metal substrate, need to be cleaned reaction surface removal surface product, it is excellent
Choosing, the technique for removing growth base substrate is preferably laser, wet etching or mechanical milling tech, but the present invention does not do to this
Limit, specifically depend on the circumstances.
Also, it should be noted that can be with Seed Layer before Seed Layer forms metal substrate away from the side in reflecting layer
Side away from reflecting layer forms metal supporting layer, then forms metal substrate away from the side of Seed Layer in metal supporting layer.
The formation process of metal supporting layer is preferably electroplating technology or bonding technology, metal substrate material be preferably copper, nickel, iron, gold,
The alloy combined between a kind of material or different materials in molybdenum, tungsten, cobalt, but the present invention do not limited this, specifically optionally
Depending on.The purpose for forming metal supporting layer is that metal supporting layer has excellent electrical conductivity and thermal conductivity, in subsequent process
In, can be easily by GaN epitaxial layer from growth base substrate (such as Sapphire Substrate) of poor thermal conductivity using laser lift-off
On be transferred in metal supporting layer.
Step 15：The second current blocking structures are formed away from the surface of the first current blocking structures in epitaxial layer, second is electric
Projection of the stream barrier structure with the first current blocking structures on the metallic substrate is not overlapped.
After growth base substrate is removed, the second gallium nitride layer can expose one layer of gallium nitride mistake away from the surface of active layer side
Cross layer, thus before the second current blocking structures are formed preferably method for etching plasma by the second gallium nitride layer away from active
The gallium nitride transition zone on the surface of layer side is got rid of.
On the basis of above-mentioned preparation method embodiment, in one embodiment of the invention, in epitaxial layer the first electric current is deviated from
The surface of barrier structure is formed also to be included before the second current blocking structures：The table of the first current blocking structures is deviated to epitaxial layer
Face carries out roughening treatment, in order to improve light extraction efficiency of the epitaxial layer away from the surface of the first current blocking structures, it is preferred that right
The technique that epi-layer surface is roughened is preferably wet-etching technology, but the present invention is not limited this, specifically optionally
Depending on.
Step 16：Epitaxial layer away from the first current blocking structures table surface forming electrode welding rod, electrode welding rod is located at the
One current blocking structures along the surface of metal substrate to the first current blocking structures direction, wherein, the technique of electrode welding rod is excellent
Elect electron beam evaporation process as, but the present invention is not limited this.
Step 17：Electrode pad is formed on the second current blocking structures surface.
In sum, the embodiment of the present invention is provided the vertical LED with current blocking structures and its making
In method, electrode welding rod is located at the upper surface of epitaxial layer, and the first current blocking structures are located at the lower surface of epitaxial layer, and electrode is welded
Bar is located at the first current blocking structures along the surface of metal substrate to the first current blocking structures direction, i.e. the first current blocking
Structure is corresponding with electrode welding rod；Second current blocking structures and electrode pad are respectively positioned on extension upper surface layer by layer, i.e. electrode
Pad is corresponding with electrode pad positioned at the second current blocking structures surface, i.e. the second current blocking structures, and the second electric current hinders
Projection of the gear structure with the first current blocking structures on the metallic substrate is not overlapped.As can be seen here, in embodiments of the present invention, electricity
Pole pad does not have as electric current resistance between the corresponding epitaxial layer region of projection and reflecting layer of electrode pad to reflecting layer direction
The insulating materials of gear structure, thus when electrode pad is made, it is not necessary to the corresponding epitaxial layer portion of electrode pad is carved
Erosion, so that the corresponding epitaxial layer portion thickness of electrode pad is constant, strengthens the structural strength of welding disking area so that follow-up
Packaging and routing during, epitaxial layer be not susceptible to fracture, improve encapsulation yield.
A kind of vertical LED with current blocking structures provided by the present invention and its manufacture method are entered above
Go and be discussed in detail.Specific case used herein is set forth to the principle and embodiment of the present invention, and the above is implemented
The explanation of example is only intended to help and understands the method for the present invention and its core concept.It should be pointed out that general for the art
For logical technical staff, under the premise without departing from the principles of the invention, some improvement and modification can also be carried out to the present invention, this
A little improvement and modification are also fallen in the protection domain of the claims in the present invention.
Claims (12)
1. a kind of vertical LED with current blocking structures, it is characterised in that include：
Positioned at the metal substrate of bottom；
Positioned at the Seed Layer of the metal substrate surface；
Positioned at the reflecting layer of the seed layer surface；
Positioned at multiple first current blocking structures of the reflection layer surface；
Deviate from the epitaxial layer of the reflecting layer side positioned at first current blocking structures, the epitaxial layer is completely covered described
First current blocking structures and the reflecting layer；
Positioned at the electrode welding rod of the epi-layer surface, the electrode welding rod is located at first current blocking structures along the gold
The surface of category substrate to the first current blocking structures direction；
Positioned at the second current blocking structures of the epi-layer surface, second current blocking structures hinder with first electric current
Projection of the gear structure in the metal substrate is not overlapped；
Positioned at the electrode pad on the second current blocking structures surface.
2. light emitting diode according to claim 1, it is characterised in that first current blocking structures and the electrode
Projection of the welding rod in the metal substrate is completely superposed.
3. light emitting diode according to claim 1 and 2, it is characterised in that second current blocking structures with it is described
Projection of the electrode pad in the metal substrate is completely superposed.
4. light emitting diode according to claim 3, it is characterised in that the epitaxial layer includes：
Deviate from the first gallium nitride layer of the reflecting layer side, first gallium nitride layer positioned at first current blocking structures
First current blocking structures and the reflecting layer is completely covered；
Positioned at the active layer on the first gallium nitride layer surface；
Positioned at the second gallium nitride layer of the active layer surface；
Wherein, first gallium nitride layer is different from the doping type of second gallium nitride layer.
5. light emitting diode according to claim 4, it is characterised in that first gallium nitride layer is p-type gallium nitride layer,
Second gallium nitride layer is n type gallium nitride layer；Or, first gallium nitride layer is n type gallium nitride layer, second gallium nitride
Layer is p-type gallium nitride layer.
6. light emitting diode according to claim 5, it is characterised in that also include：
Diffusion impervious layer between the reflecting layer and the Seed Layer.
7. a kind of preparation method of the vertical LED with current blocking structures, is applied to any one of claim 1-6
The described vertical LED with current blocking structures, it is characterised in that the preparation method includes：
Epitaxial layer is formed on growth base substrate；
Multiple first current blocking structures are formed in the epitaxial layer away from the growth base substrate side；
Reflecting layer is formed away from the side surface of the epitaxial layer one in first current blocking structures, the reflecting layer is completely covered
First current blocking structures and the epitaxial layer；
Seed Layer is formed in the reflection layer surface；
The growth base substrate is removed, metal substrate is formed away from the side in the reflecting layer in the Seed Layer；
The second current blocking structures are formed away from the surface of first current blocking structures in the epitaxial layer, described second is electric
Projection of the stream barrier structure with first current blocking structures in the metal substrate is not overlapped；
Deviate from the table surface forming electrode welding rod of first current blocking structures in the epitaxial layer, the electrode welding rod is located at institute
The first current blocking structures are stated along the surface of the metal substrate to the first current blocking structures direction；
Electrode pad is formed on the second current blocking structures surface.
8. preparation method according to claim 7, it is characterised in that described to form epitaxial layer bag on growth base substrate
Include：
The second gallium nitride layer is formed on growth base substrate；
Active layer is formed on the second gallium nitride layer surface；
The first gallium nitride layer is formed in the active layer surface；
Wherein, first gallium nitride layer is different from the doping type of second gallium nitride layer.
9. the preparation method according to claim 7 or 8, it is characterised in that deviate from first electric current in the epitaxial layer
The surface of barrier structure is formed also to be included before the second current blocking structures：
Roughening treatment is carried out away from the surface of first current blocking structures to the epitaxial layer.
10. preparation method according to claim 9, it is characterised in that before the seed layer surface is formed and reflected
Also include：
Diffusion impervious layer is formed in the seed layer surface.
11. preparation methods according to claim 10, it is characterised in that the formation process of the diffusion impervious layer is magnetic control
Sputtering technology.
12. preparation methods according to claim 11, it is characterised in that the growth base substrate is Sapphire Substrate.
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| CN112310255A (en) * | 2020-11-04 | 2021-02-02 | 山西中科潞安紫外光电科技有限公司 | Deep ultraviolet light-emitting diode with vertical structure and preparation method thereof |
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| US6486500B1 (en) * | 2001-12-04 | 2002-11-26 | Epitech Corporation, Ltd. | Led structure having a schottky contact and manufacturing method |
| CN101681961A (en) * | 2007-03-08 | 2010-03-24 | 克里公司 | Light emitting devices having current reducing structures and methods of forming light emitting devices having current reducing structures |
| CN101958378A (en) * | 2010-08-23 | 2011-01-26 | 厦门市三安光电科技有限公司 | Quaternary vertical light-emitting diode (LED) with current blocking structure and preparation method thereof |
| CN204216067U (en) * | 2014-12-03 | 2015-03-18 | 佛山市国星半导体技术有限公司 | There is the vertical LED of current blocking structures |
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| US6486500B1 (en) * | 2001-12-04 | 2002-11-26 | Epitech Corporation, Ltd. | Led structure having a schottky contact and manufacturing method |
| CN101681961A (en) * | 2007-03-08 | 2010-03-24 | 克里公司 | Light emitting devices having current reducing structures and methods of forming light emitting devices having current reducing structures |
| CN101958378A (en) * | 2010-08-23 | 2011-01-26 | 厦门市三安光电科技有限公司 | Quaternary vertical light-emitting diode (LED) with current blocking structure and preparation method thereof |
| CN204216067U (en) * | 2014-12-03 | 2015-03-18 | 佛山市国星半导体技术有限公司 | There is the vertical LED of current blocking structures |
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