CN103715339A - GaN-based light emitting diode and preparation method thereof - Google Patents
GaN-based light emitting diode and preparation method thereof Download PDFInfo
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- CN103715339A CN103715339A CN201310665463.5A CN201310665463A CN103715339A CN 103715339 A CN103715339 A CN 103715339A CN 201310665463 A CN201310665463 A CN 201310665463A CN 103715339 A CN103715339 A CN 103715339A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 238000001312 dry etching Methods 0.000 claims abstract description 8
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 97
- 229910002601 GaN Inorganic materials 0.000 claims description 96
- 239000000463 material Substances 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 15
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- 150000002500 ions Chemical class 0.000 claims description 2
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- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
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- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
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- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
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Abstract
The invention discloses a GaN-based light emitting diode and a preparation method thereof. The GaN-based light emitting diode includes an X type GaN layer and an X type electrode arranged on the X type GaN layer; a current obstruction area is formed on the X type GaN layer under the X type electrode; the area of the current obstruction area is smaller than that of the X type electrode; and the X type GaN layer is an N type GaN layer or a P type GaN layer, and the X type electrode corresponding to the X type GaN layer is an N type electrode or a P type electrode. The preparation method uses photoetching and plasma dry etching technology, enables a processed surface to from a high-resistance area, finally achieves the purpose of branching guidance of current, and enables invalid light emission of an LED electrode area is greatly reduced.
Description
Technical field:
The invention belongs to gallium nitride based light emitting diode manufacturing process technology field, be specifically related to a kind of gallium nitride based light emitting diode and preparation method thereof.
Background technology:
The development experience of light-emitting diode (Light Emitting Diode, be called for short LED) many decades historical, in signal demonstration, backlight and solid-state illumination field, obtained application extremely widely, brought various facilities to the mankind's life.III-V compounds of group gallium nitride (GaN) material of take can cover the most of wave band from deep ultraviolet to visible ray as basic LED device (comprising the various alloy material systems that its In of the same clan, Al element doping obtain).The manufacture of LED device is to be grown and formed P-type and N-type layer film material by extensional mode mostly, and at P-type and N-type interlayer, grows that to form charge carrier recombination region be luminous zone for the periodicity multilayer material of different band structures.Its epitaxial growth substrate adopts sapphire (Al more
2o
3) or the material such as carborundum (SiC), and then utilize semiconducter process to complete the steps such as the making of chip operation zone definitions, electrode and surface-texturing to form luminescent device, finally after encapsulation, add forward voltage make itself and luminous.In device design work, according to being with design theory and actual process regulation and control, can realizing the light output of different range wavelength, and obtain practical application widely.
Horizontal structure LED device is that N-type and P type electrode are placed in to the same side of LED film, and is the sapphire material substrate of insulation at the bottom of this film.P-type and N-type electrode fabrication are to adopt the processes such as photoetching, local dry cavity etching, physical vapour deposition (PVD) to obtain, and are distributed in the diverse location on the same surface of chip, and it injects operating current and by horizontal direction, is flow through the luminous zone of LED.This device injects because inhomogeneous electronics is horizontal and side diffusion causes the inhomogeneous electric current from P-type electrode district to N-type electrode district to inject, and has limited the luminous efficiency of single LEDs maximum core chip size and integral device.Because the refractive index difference of gallium nitride material and air or encapsulating material is larger, its angle of total reflection causes more greatly light extraction efficiency low simultaneously.Another kind of device is to adopt the inverted mode of chip, chip is pressed together as silicon substrate by thick metal layer and electric conducting material, when prepared by chip, use high reflection mirror structure simultaneously, make chip from the bright dipping of sapphire face, can obtain higher luminous efficiency, but P and the N utmost point are still in same layer.The third method is the structure that thoroughly changes LED device, adopt Ultra-Violet Laser to peel off to wait substrate to remove and the mode of transfer, utilize the strong light absorption of Ultra-Violet Laser at the interface of sapphire material and GaN material to produce GaN localized heat and decompose, realize the separated of LED film and Sapphire Substrate.Make N-type and P-type electrode become vertical stratification from horizontal structure, be that Injection Current is mainly crossed LED device architecture with the mode uniform-flow perpendicular to film surface, realize vertical structure LED device, not only increase substantially operating current, and because radiating effect is improved simultaneously, the reliability of its device also significantly promotes.
But in above various structure LED chip structures, because electrode pad below is that electric current injects the most concentrated region, this region illumination effect is the most obvious, yet because making it, blocking of electrode form invalid luminous (after being reflected by electrode, at device inside, through multiple reflections, by material, absorbed and form thermal effect again), therefore in LED chip technique, generally adopted insulating material to prepare current blocked layer (CBL – current blocking layer), make Injection Current reduce or avoid this region, reduced invalid luminous.This technique need to the gallium nitride surface under electrode on, utilize chemical vapour deposition (CVD), photoetching, wet etching preparation to there is certain thickness dielectric material layer, as silicon nitride or silica; Because its surface appearance of many interfacial characteristicses of this position is comparatively complicated, if PROCESS FOR TREATMENT is improper, is easy to bring a series of volume production unusual conditions such as the follow-up large area power down utmost point, and causes the loss that cannot retrieve.
Summary of the invention:
The object of the invention is to, a kind of gallium nitride based light emitting diode and preparation method thereof is provided, to improve gallium nitride based light emitting diode luminous efficiency.
To achieve these goals, the technical solution used in the present invention is:
A gallium nitride based light emitting diode, comprises X-type gallium nitride layer and is arranged at the X-type electrode on X-type gallium nitride layer; On the X-type gallium nitride layer of described X-type electrode bottom, be formed with current blocked region; The area in current blocked region is less than the area of X-type electrode; Described X-type gallium nitride layer is n type gallium nitride layer or P type gallium nitride layer, and it is N-type electrode or P type electrode that described X-type electrode pair is answered X-type gallium nitride layer.
The present invention further improves and is: described current blocked region, for using plasma on X-type gallium nitride layer carries out dry etching, makes the conductive capability of this region P type gallium nitride material decline and form.
The present invention further improves and is: the bottom of X-type electrode is provided with mirror layer.
The present invention further improves and is: during described gallium nitride based light emitting diode work, current blocked region has current blocking effect electric current is divided to guiding, electric current flows through from other low-resistance regions beyond the current blocked region of X-type gallium nitride layer, reduce X-type electrode because of the luminous loss that occlusion effect causes, indirectly improved the luminous of other regions beyond current blocked region.
The present invention further improves and is: using plasma carries out dry etching while preparing current blocked region, adopts O
2plasma, F base plasma or both mix plasma.
The present invention further improves and is: described gallium nitride based light emitting diode is horizontal structure, and described X-type gallium nitride layer is P type gallium nitride layer, and described X-type electrode is P type electrode; P type gallium nitride layer below is provided with multiple quantum well layer, n type gallium nitride layer and substrate successively; P type gallium nitride layer is provided with TCL transparency conducting layer TCL electrically conducting transparent layer segment and is etched away the current blocked region of exposing on P type gallium nitride layer; P type electrode is arranged at the top that TCL transparency conducting layer is etched away part; N type gallium nitride layer is formed with N electrode zone on (11), and N electrode zone is provided with N-type electrode.
The present invention further improves and is: described gallium nitride based light emitting diode is vertical stratification, and described X-type gallium nitride layer is n type gallium nitride layer, and described X-type electrode is N-type electrode; N type gallium nitride layer below is provided with multiple quantum well layer, P type gallium nitride layer, metal bonding layer, conductive substrates and weld layer successively.
The present invention further improves and is: the specific contact resistivity rate >10 in current blocked region
-5Ω cm
2.
A kind of preparation method of gallium nitride based light emitting diode, on described X-type gallium nitride layer, utilize the gas ions of O base plasma, F base plasma or the two mixing to carry out dry plasma etch to subregion on this X-type gallium nitride layer, the conductive capability of this region X-type gallium nitride material is declined, obtain current blocked region; And then above current blocked region, prepare X-type electrode.
The present invention utilizes photoetching and dry plasma etch technology, LED chip P type electrode lower area is carried out to surface treatment, become high resistant region to obtain current blocking effect, electric current is flow through from other low-resistance regions of P type gallium nitride layer, reduced the luminous loss that this electrode zone causes because of occlusion effect, indirectly improve the luminous of other regions, and use aluminium mirror or silver mirror as the part of P electrode metal structure, thereby realize the object of High Efficiency Luminescence.
In the present invention, epitaxial growth technology includes but not limited to metal organic chemical vapor deposition, molecular beam epitaxy, atomic layer epitaxy, pulsed laser deposition; Choosing of epitaxial growth substrate includes but not limited to that sapphire, aluminium nitride, gallium nitride, silicon, carborundum, zinc oxide, its crystal orientation include but not limited to 0001 polarization such as grade, semipolar and non-polarized direction; The patterned surface structure that selected substrate comprises various characteristic sizes.
In the present invention, LED chip (gallium nitride based light emitting diode) includes but not limited to horizontal structure LED chip, inverted structure LED chip, light emitting diode (LED) chip with vertical structure, or the LED chip of other peculiar structures.
In the present invention, dry plasma etch technique, includes but not limited to O
2plasma, F base plasma or both mix plasma.
In the present invention, chip preparing process flow process, includes but not limited to photoetching, wet method and dry etching, electron beam or sputter, chemical vapour deposition (CVD), method for annealing.
In the present invention, P type gallium nitride layer is provided with the mirror layer under P type electrode, is single or multiple layer metal or compound structure, includes but not limited to silver, aluminium, gold, DBR or ODR layer.
In the present invention, P type gallium nitride layer is provided with on P type electrode metal layer, n type gallium nitride layer and is provided with N-type electrode metal layer, forms good ohmic respectively contact with P/N type layer semi-conducting material, for single or multi-layer metal structure, include but not limited to nickel, titanium, aluminium, gold, platinum and alloy thereof.
The present invention utilizes photoetching and dry plasma etch technology, makes processed surface form high resistant region, finally realizes electric current and divides to the object of guiding, makes invalid luminous being greatly diminished of LED electrode zone.It has following beneficial effect with respect to prior art:
(1) technique is made and has simply been reduced original processing step, has saved deielectric-coating deposition and wet chemical etch process, at the same industrialization production cost that also reduced that reduces processing step; (2) adopt live width fineness to reach other dry method carving technology of tens nanometer level, the wet etching process that alternative live width fineness is micron level, promotes technology controlling and process ability greatly; (3) the present invention no longer introduces other materials and interface between gallium nitride and electrode layer, has reduced interface complexity, can avoid, because state of interface is complicated and the improper follow-up power down utmost point situation causing of wet chemical etch processes, improving technique yields; (4) the present invention not only can be used for horizontal structure LED chip, is also applicable to make the LED chip of other various structures simultaneously.
Accompanying drawing explanation
Fig. 1 is the structural representation of horizontal structure LED chip;
Fig. 2 is the structural representation of light emitting diode (LED) chip with vertical structure.
Embodiment
Below in conjunction with accompanying drawing, the present invention is further described.
The preparation method of a kind of gallium nitride based light emitting diode of the present invention, utilize photoetching and dry plasma etch technology, LED chip P type electrode lower area is carried out to surface treatment, become high resistant region to obtain current blocking effect, electric current is flow through from other low-resistance regions of P type gallium nitride layer, reduced the luminous loss that this electrode zone causes because of occlusion effect, indirectly improve the luminous of other regions, and use aluminium mirror or silver mirror as the part of P electrode metal structure, thereby realize the object of High Efficiency Luminescence, this preparation method at least comprises the following steps:
1) utilize MOCVD(Metal-organic Chemical Vapor Deposition, metallo-organic compound chemical gaseous phase deposition) method growth acquisition LED epitaxial structure, LED epitaxial structure comprises substrate 10 and is deposited in successively and P type gallium nitride layer 13; By photolithographicallpatterned, at crystal column surface, form N electrode zone, recycling dry etch process is carried out etching to this region epitaxial loayer and is exposed n type gallium nitride, forms homonymy PN junction, the graphics chip completing and dimension definitions;
2) on LED epitaxial wafer P type gallium nitride layer 13, utilize PVD physical deposition techniques as electron beam evaporation or sputtering method, preparation TCL transparency conducting layer 15, the material of TCL transparency conducting layer 15 is as nickel gold or ITO tin indium oxide electric conducting material; According to LED chip design, utilize photoetching and wet etching process to complete the preparation of required TCL transparency conducting layer again;
3) prepare the current blocked layer 17 under P electrode zone; the method is different from the conventional nonconducting insulating barrier of dielectric substance (as silica or silicon nitride) formation one deck that utilizes under electrode; it is to utilize photoetching technique that the part TCL transparency conducting layer 15 of P type electrode 162 bottoms is etched away; so that a part for P type gallium nitride layer 13 comes out, other regions are protected with photoresist.Then take dry plasma etch technology, utilize O, F base plasma to carry out dry etching to this region, the conductive capability of this region P type gallium nitride material is sharply declined, to obtain the current blocked layer 17 in high resistant region, the specific contact resistivity rate >10 of current blocked layer
-5Ω cm
2;
4) by making P type electrode (high reflection mirror, Ohmic electrode) 162, N-type electrode 161, passivation protection layer 14, finally complete LED chip Qian road manufacture craft.P type electrode 162 is arranged on the top that TCL transparency conducting layer 15 is etched away part.
In the present invention, epitaxial growth technology includes but not limited to metal organic chemical vapor deposition, molecular beam epitaxy, atomic layer epitaxy, pulsed laser deposition; Choosing of described epitaxial growth substrate includes but not limited to that sapphire, aluminium nitride, gallium nitride, silicon, carborundum, zinc oxide, its crystal orientation include but not limited to 0001 polarization such as grade, semipolar and non-polarized direction; The patterned surface structure that selected substrate comprises various characteristic sizes.
In the present invention, LED chip includes but not limited to horizontal structure LED chip, inverted structure LED chip, light emitting diode (LED) chip with vertical structure, or the LED chip of other peculiar structures.Fig. 2 is light emitting diode (LED) chip with vertical structure, and n type gallium nitride layer 11 is provided with N-type electrode 161; N type gallium nitride layer 11 below are provided with multiple quantum well layer 12, P type gallium nitride layer 13, metal bonding layer 20, conductive substrates 21 and weld layer 22 successively; The n type gallium nitride layer 11 of N-type electrode 161 belows is provided with current blocked layer 17.
In the present invention, dry plasma etch technique, includes but not limited to O
2plasma, F base plasma or both mix plasma.
In the present invention, chip preparing process flow process, includes but not limited to photoetching, wet method and dry etching, electron beam or sputter, chemical vapour deposition (CVD), method for annealing.
In the present invention, P type gallium nitride layer is provided with the mirror layer under P type electrode, is single or multiple layer metal or compound structure, includes but not limited to silver, aluminium, gold, DBR or ODR layer.
In the present invention, P type gallium nitride layer is provided with on P type electrode metal layer, n type gallium nitride layer and is provided with N-type electrode metal layer, forms good ohmic respectively contact with P/N type layer semi-conducting material, for single or multi-layer metal structure, include but not limited to nickel, titanium, aluminium, gold, platinum and alloy thereof.
Claims (9)
1. a gallium nitride based light emitting diode, is characterized in that, comprises X-type gallium nitride layer and is arranged at the X-type electrode on X-type gallium nitride layer; On the X-type gallium nitride layer of described X-type electrode bottom, be formed with current blocked region; The area in current blocked region is less than the area of X-type electrode; Described X-type gallium nitride layer is n type gallium nitride layer or P type gallium nitride layer, and it is N-type electrode or P type electrode that described X-type electrode pair is answered X-type gallium nitride layer.
2. a kind of gallium nitride based light emitting diode according to claim 1, is characterized in that, described current blocked region, for using plasma on X-type gallium nitride layer carries out dry etching, makes the conductive capability of this region P type gallium nitride material decline and form.
3. a kind of gallium nitride based light emitting diode according to claim 1, is characterized in that, the bottom of X-type electrode is provided with mirror layer.
4. a kind of gallium nitride based light emitting diode according to claim 1, it is characterized in that, during described gallium nitride based light emitting diode work, current blocked region has current blocking effect electric current is divided to guiding, electric current flows through from other low-resistance regions beyond the current blocked region of X-type gallium nitride layer, reduce X-type electrode because of the luminous loss that occlusion effect causes, indirectly improved the luminous of other regions beyond current blocked region.
5. a kind of gallium nitride based light emitting diode according to claim 2, is characterized in that, using plasma carries out dry etching while preparing current blocked region, adopts O
2plasma, F base plasma or both mix plasma.
6. a kind of gallium nitride based light emitting diode according to claim 1, is characterized in that, described gallium nitride based light emitting diode is horizontal structure, and described X-type gallium nitride layer is P type gallium nitride layer, and described X-type electrode is P type electrode; P type gallium nitride layer below is provided with multiple quantum well layer (12), n type gallium nitride layer (11) and substrate (10) successively; P type gallium nitride layer is provided with TCL transparency conducting layer (15), and TCL transparency conducting layer (15) part is etched away the current blocked region of exposing on P type gallium nitride layer; P type electrode is arranged at the top that TCL transparency conducting layer (15) is etched away part; N type gallium nitride layer is formed with N electrode zone on (11), and N electrode zone is provided with N-type electrode.
7. a kind of gallium nitride based light emitting diode according to claim 1, is characterized in that, described gallium nitride based light emitting diode is vertical stratification, and described X-type gallium nitride layer is n type gallium nitride layer, and described X-type electrode is N-type electrode; N type gallium nitride layer below is provided with multiple quantum well layer (12), P type gallium nitride layer (13), metal bonding layer (20), conductive substrates (21) and weld layer (22) successively.
8. a kind of gallium nitride based light emitting diode according to claim 1, is characterized in that, the specific contact resistivity rate >10 in current blocked region
-5Ω cm
2.
9. the preparation method of a kind of gallium nitride based light emitting diode described in any one in claim 1 to 8, it is characterized in that, on described X-type gallium nitride layer, utilize the gas ions of O base plasma, F base plasma or the two mixing to carry out dry plasma etch to subregion on this X-type gallium nitride layer, the conductive capability of this region X-type gallium nitride material is declined, obtain current blocked region, wherein specific contact resistivity rate >10
-5Ω cm
2; And then above current blocked region, prepare X-type electrode.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106206894A (en) * | 2016-07-19 | 2016-12-07 | 厦门乾照光电股份有限公司 | A kind of light emitting diode with high value GaN current barrier layer and preparation method thereof |
| CN107527982A (en) * | 2017-08-28 | 2017-12-29 | 聚灿光电科技股份有限公司 | LED chip and preparation method thereof |
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| CN108808444A (en) * | 2018-06-19 | 2018-11-13 | 扬州乾照光电有限公司 | A kind of upside-down mounting VCSEL chips and production method |
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