CN104409593B - 一种制作氮化物外延层、衬底与器件晶圆的方法 - Google Patents
一种制作氮化物外延层、衬底与器件晶圆的方法 Download PDFInfo
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- CN104409593B CN104409593B CN201410654422.0A CN201410654422A CN104409593B CN 104409593 B CN104409593 B CN 104409593B CN 201410654422 A CN201410654422 A CN 201410654422A CN 104409593 B CN104409593 B CN 104409593B
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
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- H01L21/0254—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02378—Silicon carbide
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (6)
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CN201410654422.0A CN104409593B (zh) | 2014-11-17 | 2014-11-17 | 一种制作氮化物外延层、衬底与器件晶圆的方法 |
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CN201410654422.0A CN104409593B (zh) | 2014-11-17 | 2014-11-17 | 一种制作氮化物外延层、衬底与器件晶圆的方法 |
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CN104409593A CN104409593A (zh) | 2015-03-11 |
CN104409593B true CN104409593B (zh) | 2017-08-22 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2020044023A1 (en) * | 2018-08-31 | 2020-03-05 | The University Of Bristol | A semiconductor on diamond substrate, precursor for use in preparing a semiconductor on diamond substrate, and methods for making the same |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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CN106283144B (zh) * | 2016-09-14 | 2018-01-30 | 绍兴文理学院 | 一种有机纳米超晶格薄膜氧化金属材料的制备方法 |
CN110047977B (zh) * | 2019-04-23 | 2020-05-22 | 广东省半导体产业技术研究院 | 紫外led器件及其制备方法 |
CN113223928B (zh) * | 2021-04-16 | 2024-01-12 | 西安电子科技大学 | 一种基于转移键合的氧化镓外延生长方法 |
CN113270358B (zh) | 2021-07-15 | 2021-09-14 | 苏州浪潮智能科技有限公司 | 一种制作GaN芯片的方法及GaN芯片 |
CN114628432B (zh) * | 2022-02-28 | 2023-03-10 | 诺视科技(苏州)有限公司 | 一种半导体装置的制作方法及半导体装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1159251A (zh) * | 1995-06-08 | 1997-09-10 | 中佛罗里达大学 | 作为半导体外延薄膜生长用衬底的方铁矿结构氧化物 |
CN1716653A (zh) * | 2005-06-09 | 2006-01-04 | 大连理工大学 | ZnO-GaN复合衬底GaN发光器件及其制备方法 |
CN101651090A (zh) * | 2008-08-12 | 2010-02-17 | 昆山中辰硅晶有限公司 | 一种制造第一基板及在制造过程中回收第二基板的方法 |
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TW201003981A (en) * | 2008-07-14 | 2010-01-16 | Advanced Optoelectronic Tech | Substrate structure and method of removing the substrate structure |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1159251A (zh) * | 1995-06-08 | 1997-09-10 | 中佛罗里达大学 | 作为半导体外延薄膜生长用衬底的方铁矿结构氧化物 |
CN1716653A (zh) * | 2005-06-09 | 2006-01-04 | 大连理工大学 | ZnO-GaN复合衬底GaN发光器件及其制备方法 |
CN101651090A (zh) * | 2008-08-12 | 2010-02-17 | 昆山中辰硅晶有限公司 | 一种制造第一基板及在制造过程中回收第二基板的方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020044023A1 (en) * | 2018-08-31 | 2020-03-05 | The University Of Bristol | A semiconductor on diamond substrate, precursor for use in preparing a semiconductor on diamond substrate, and methods for making the same |
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