CN104409530A - 应变SiGeSn鳍型光电探测器 - Google Patents
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Abstract
本发明公开了一种应变SiGeSn鳍型光电探测器，主要解决现有光电探测器中材料毒性大、成本高的问题。其自下而上包括：下电极(102)、吸收区(103)、上电极(104)和应力薄膜(105)；吸收区(103)采用空隙与SiGeSn复合材料相交错构成的鳍型结构，该SiGeSn复合材料在衬底(101)上外延不同组分的Ge和Sn获得，其通式为Si1-x-yGeySnx，其中0≤x≤0.25，0≤y≤0.75；应力薄膜(105)包裹在吸收区(103)的侧面和上电极(104)表面。本发明通过应力薄膜(105)在SiGeSn复合材料中产生的应变改变吸收区(103)带隙，提高了探测器的光谱响应范围。
Description
技术领域
本发明属于微电子器件技术领域，特别涉及光电探测器，具体是一种应变SiGeSn鳍型光电探测器，可用于光电探测。
背景技术
红外波段包含众多特征谱线，工作在该波段的探测器在通信技术、军事、国防、消防、医疗、环境监测、自动影像等很多方面有着重要的应用。目前，用于的红外探测器的半导体材料，包括III-V族材料InGaAs，GaInAsSb，InGaSb等，II-VI材料HgCdTe和IV族材料Ge，GeSn等。InGaAs探测器在近红外波段性能优异，HgxCd1-xTe长波长红外探测器是目前性能最好的中红外探测器，通过调节材料中Hg的组分可以实现带隙0-0.8eV的连续可调。然而无论III-V族或者II-VI族材料，本身都会引起环境问题，成本非常高，而且与Si基技术不兼容。
Ge在1.3-1.55μm波段范围内有很高的吸收效率，且可以直接在Si基长出高质量Ge薄膜，使得高性能Ge被认为近红外探测器的最佳备选材料。室温下，Ge直接带隙为0.80eV，因此Ge探测器吸收边在1.55μm左右，不能覆盖中红外波段。可以通过引入Sn来改变Ge基探测器的吸收边。GeSn合金具有比Ge更小的带隙，因此吸收边可以进一步红移。从理论上说增加Sn的组分可以使GeSn材料的带隙减小到零，但由于Sn在Ge中的固溶度很低，即小于1％,因此很难制备高质量、无缺陷的高Sn组分的GeSn。现在用外延生长的方法也只能制备出Sn组分为20％的GeSn材料。并且随着Sn组分的增加，材料质量和热稳定型都会变差，因此单纯依靠提高Sn的组分实现较大范围带隙的调节比较困难。
发明内容
本发明的目的在于针对上述已有技术的不足，提供一种应变SiGeSn鳍型光电探测器，以减小光电探测器原材料毒性，增大探测器的吸收谱波长范围。
为实现上述目的，本发明的应变SiGeSn鳍型光电探测器，包括下电极102、吸收区103、上电极104和应力薄膜105，其特征在于：吸收区103采用由SiGeSn复合材料构成的鳍型结构，应力薄膜105位于吸收区103的表面。
上述光电探测器，其特征在于，所述SiGeSn复合材料，是在衬底101上外延GeSn材料获得，其通式为Si1-x-yGeySnx，其中0≤x≤0.25，0≤y≤0.75。
上述光电探测器，其特征在于，所述SiGeSn复合材料采用单层结构。
上述光电探测器，其特征在于，所述SiGeSn复合材料，采用多层结构，每层的Ge、Sn组分不同；
上述光电探测器，其特征在于，所述鳍型结构，是由空隙与SiGeSn复合材料相交错而构成。
上述光电探测器，其特征在于，应力薄膜105部分包覆在吸收区103和电极104的表面。
上述光电探测器，其特征在于，应力薄膜105全部包覆在吸收区103和电极104的表面。
上述光电探测器，其特征在于，包覆在吸收区103的表面的应力薄膜105采用单层结构
上述光电探测器，其特征在于，包覆在吸收区103的表面的应力薄膜105采用多层结构。
本发明具有如下优点：
1、提高了吸收区材料带隙调节效果
本发明由于采用SiGeSn有源区材料，并通过应力薄膜在吸收区中引入应变，从而改变吸收区材料带隙，在不改变吸收区材料组分的情况下，可以有效调节器件吸收波长范围，同时在应力薄膜中应力和厚度确定的情况下，还可以通过减小鳍型结构的厚度来增加鳍型吸收区的应变，从而增强吸收区材料带隙调节效果。
2、使用的材料更为低廉、环保
本发明中使用的材料全为IV族材料，同现有的III-V族材料和II-VI材料相比，IV族材料无毒、廉价。同时，目前半导体制造工业中的生产设备是针对Si材料设计的，如果使用III-V族材料和II-VI材料，则需要对现有的生产设备进行替换。而使用Si材料以及与Si材料同族的其他IV族材料，可以在不改变现有生产设备情况下，制备出SiGeSn鳍型光电探测器，因而该SiGeSn鳍型光电探测器具有更低的成本。
相比其他光电探测器，本发明使用SiGeSn材料作为有源区材料的鳍型结构的光电探测器具有更好的应用前景。
附图说明
图1为本发明应变SiGeSn探测器的第一实例结构图；
图2为本发明应变SiGeSn探测器的第二实例结构图；
图3为本发明应变SiGeSn探测器的截面结构图。
具体实施方式
为了使本发明的目的及优点更加清楚明白，以下结合附图和实施例对本发明进行进一步详细说明。应当理解，此处所描述的具体实施例仅用以解释本发明，并不用于限定本发明。
实施例1，双层结构吸收区，单层结构应力层的应变SiGeSn鳍型光电探测器
参照图1，本实例自下而上包括：下电极102、吸收区103和上电极104。其中下电极极102采用弛豫n型Ge材料，上电极104采用弛豫p型Ge材料，吸收区103采用双层弛豫本征SiGeSn复合材料，且与空隙交错排列，形成的鳍型结构；该上电极104位于吸收区103的上表面，其形状与吸收区103的鳍型形状相同。上电极104的表面和吸收区103的部分侧面包裹有单层Si3N4应力薄膜105，如图3所示。通过应力薄膜在吸收区103中产生应力，以调整吸收区103的带隙，提高吸收区103吸收谱波长范围。
所述双层弛豫本征SiGeSn复合材料，是在衬底101上外延不同组分的Ge和Sn构成获得，其通式为Si1-x-yGeySnx，其中第一层弛豫本征Si1-x-yGeySnx复合材料的组分为x＝0.05，y＝0，第二层弛豫本征Si1-x-yGeySnx复合材料的组分为x＝0.25，y＝0.75。
实施例2，单层结构吸收区，双层结构应力层的应变SiGeSn鳍型光电探测器。
参照图2，本实例自下而上包括：下电极102、吸收区103、上电极104和双层应力薄膜105。其中下电极极102采用弛豫n型Si材料；吸收区103位于下电极102之上，该吸收区103采用单层弛豫本征SiGeSn复合材料，且与空隙交错排列，形成的鳍型结构；上电极104采用弛豫p型Si材料，位于吸收区103的上表面，其形状与吸收区103的鳍型形状相同；双层应力薄膜105将上电极104和吸收区103的侧面完全包裹，以在吸收区103中产生应力，从而调整吸收区103的带隙，实现对吸收区103吸收谱波长范围的扩展。
所述单层弛豫本征SiGeSn复合材料，是在衬底101上外延不同组分的Ge和Sn构成获得，其通式为Si1-x-yGeySnx，其中第一层弛豫本征Si1-x-yGeySnx复合材料的组分为x＝0.05，y＝0.2。
所述双层应力薄膜105，是通过外延技术先在上电极104的所有表面和吸收区103的侧表面生长一层SiO2薄膜，并再在SiO2薄膜上外延生长一层SiC获得
实施例3，单层结构吸收区，单层结构应力层的应变SiGeSn鳍型光电探测器
参照图1，本实例自下而上包括：下电极102、吸收区103和上电极104。其中下电极极102采用弛豫n型多晶硅材料，上电极104采用弛豫p型多晶硅材料，吸收区103采用单层弛豫本征SiGeSn复合材料，且与空隙交错排列，形成的鳍型结构；该上电极104的形状与吸收区103的鳍型形状相同。上电极104的表面和吸收区103的部分侧面包裹有单层应力薄膜105，如图3所示。该应力薄膜在吸收区103中产生应力，实现对吸收区103的带隙调整，提高吸收区103吸收谱波长范围。
所述单层弛豫本征SiGeSn复合材料，是在衬底101上外延不同组分的Ge和Sn构成获得，其通式为Si1-x-yGeySnx，其中第一层弛豫本征Si1-x-yGeySnx复合材料的组分为为x＝0.05，y＝0.15。
上述实例的下电极102和上电极104不限于Ge、Si和多晶硅，其可采用任意的半导体材料。
以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明原理的前提下，还可以作出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。
Claims (8)
1.一种应变SiGeSn鳍型光电探测器，自下而上包括：下电极(102)、吸收区(103)和上电极(104)，其特征在于：吸收区(103)采用由SiGeSn复合材料构成的鳍型结构，吸收区(103)的侧表面和上电极(104)的上表面包裹有应力薄膜(105)。
2.如权利要求1所述的一种应变SiGeSn鳍型光电探测器，其特征在于，所述SiGeSn复合材料，是在衬底(101)上外延不同组分的Ge和Sn构成，其通式为Si1-x-yGeySnx，其中0≤x≤0.25，0≤y≤0.75。
3.如权利要求1所述的一种应变SiGeSn鳍型光电探测器，其特征在于，所述SiGeSn复合材料采用单层结构或采用多层结构。
4.如权利要求1所述的应变SiGeSn鳍型光电探测器，其特征在于，所述鳍型结构，是由空隙与SiGeSn复合材料相交错而构成。
5.如权利要求1所述的一种应变SiGeSn鳍型光电探测器，其特征在于上电极(104)的形状与吸收区(103)的形状相同。
6.如权利要求1所述的一种应变SiGeSn鳍型光电探测器，其特征在于表应力薄膜(105)包覆在上电极(104)的上表面和吸收区(103)侧面的部分区域。
7.如权利要求1所述的一种应变SiGeSn鳍型光电探测器，其特征在于应力薄膜(105)全部包覆在上电极(104)的上表面和吸收区(103)的整个侧面。
8.如权利要求6或7所述的一种应变SiGeSn鳍型光电探测器，其特征在于，包覆在吸收区(103)和上电极(104)表面的应力薄膜(105)采用单层结构或双层结构。
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106935674A (zh) * | 2017-04-21 | 2017-07-07 | 江苏天雄电气自动化有限公司 | 一种SiGeSn太阳能电池光伏组件 |
| CN108231920A (zh) * | 2018-01-23 | 2018-06-29 | 中国电子科技集团公司第四十四研究所 | 带氮化硅致应力结构的硅基探测器及制作方法 |
| WO2019000384A1 (zh) * | 2017-06-29 | 2019-01-03 | 上海集成电路研发中心有限公司 | 具有垂直侧壁敏感层的红外探测器及其制备方法 |
| CN109155340A (zh) * | 2015-12-21 | 2019-01-04 | 文和文森斯设备公司 | 微结构增强吸收光敏器件 |
| CN113540289A (zh) * | 2021-07-13 | 2021-10-22 | 广东工业大学 | 一种拓宽光响应波段的太阳能电池薄膜的制备方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6897471B1 (en) * | 2003-11-28 | 2005-05-24 | The United States Of America As Represented By The Secretary Of The Air Force | Strain-engineered direct-gap Ge/SnxGe1-x heterodiode and multi-quantum-well photodetectors, laser, emitters and modulators grown on SnySizGe1-y-z-buffered silicon |
-
2014
- 2014-12-05 CN CN201410737288.0A patent/CN104409530B/zh active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6897471B1 (en) * | 2003-11-28 | 2005-05-24 | The United States Of America As Represented By The Secretary Of The Air Force | Strain-engineered direct-gap Ge/SnxGe1-x heterodiode and multi-quantum-well photodetectors, laser, emitters and modulators grown on SnySizGe1-y-z-buffered silicon |
Non-Patent Citations (1)
| Title |
|---|
| CHI XU ET AL: "（Molecular synthesis of high-performance near-IR photodetectors with independently tunable structural and optical properties based on Si-Ge-Sn", 《JOURNAL OF THE AMERICAN CHEMICAL SOCIETY》 * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109155340A (zh) * | 2015-12-21 | 2019-01-04 | 文和文森斯设备公司 | 微结构增强吸收光敏器件 |
| CN106935674A (zh) * | 2017-04-21 | 2017-07-07 | 江苏天雄电气自动化有限公司 | 一种SiGeSn太阳能电池光伏组件 |
| WO2019000384A1 (zh) * | 2017-06-29 | 2019-01-03 | 上海集成电路研发中心有限公司 | 具有垂直侧壁敏感层的红外探测器及其制备方法 |
| CN108231920A (zh) * | 2018-01-23 | 2018-06-29 | 中国电子科技集团公司第四十四研究所 | 带氮化硅致应力结构的硅基探测器及制作方法 |
| CN113540289A (zh) * | 2021-07-13 | 2021-10-22 | 广东工业大学 | 一种拓宽光响应波段的太阳能电池薄膜的制备方法 |
| CN113540289B (zh) * | 2021-07-13 | 2023-01-13 | 广东工业大学 | 一种拓宽光响应波段的太阳能电池薄膜的制备方法 |
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| CN104409530B (zh) | 2017-06-16 |
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