CN108231920A - 带氮化硅致应力结构的硅基探测器及制作方法 - Google Patents
带氮化硅致应力结构的硅基探测器及制作方法 Download PDFInfo
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- 229910052581 Si3N4 Inorganic materials 0.000 title claims abstract description 42
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims abstract description 42
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 20
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 20
- 239000010703 silicon Substances 0.000 title claims abstract description 20
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- 238000002955 isolation Methods 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 9
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- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 abstract description 15
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
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- 229910003978 SiClx Inorganic materials 0.000 description 1
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Abstract
本发明公开了一种带氮化硅致应力结构的硅基探测器,该硅基探测器在光敏区表面设置有微结构阵列,微结构阵列表面覆盖有氮化硅应力层;本发明还公开了前述硅基探测器的制作方法;本发明的有益技术效果是:提出了一种带氮化硅致应力结构的硅基探测器及制作方法,采用本发明方案后,可通过氮化硅应力层向衬底施加应力,从而使衬底持续受到应力作用,改变衬底的吸收特性。
Description
技术领域
本发明涉及一种硅基探测器技术,尤其涉及一种带氮化硅致应力结构的硅基探测器及制作方法。
背景技术
现有硅基光电探测器的光敏区,一般通过不同注入条件、不同外延厚度和响应增强结构等方式来
达到对某特定波长的最大化吸收;但是,由于受硅材料截止波长小于1100μm的限制,只能在短波长
范围内应用;此外,现有的光敏区增强手段,无法对衬底层的吸收系数起到调整效果。
发明内容
针对背景技术中的问题,本发明提出了一种带氮化硅致应力结构的硅基探测器,包括硅材质的光敏区;其创新在于:所述光敏区表面设置有微结构阵列,微结构阵列表面覆盖有氮化硅应力层;所述微结构阵列由多个凸起结构组成;单个凸起结构为下大上小的圆台;所述氮化硅应力层的形貌与凸起结构匹配;相邻凸起结构之间设置有隔离槽,隔离槽的深度达到光敏区表面。
前述方案的原理是:通过引入张应力的方式提高硅衬底的光吸收波长,是一种现有理论,但由于缺乏相应的实现手段,前述理论在实际生产中的应用效果较差;针对前述理论的应用,发明人进行了大量研究,在研究过程中发现,将微结构阵列和氮化硅应力层按前述方案设置后,由于氮化硅应力层比较致密,氮化硅应力层中的原子排列较紧密,原子间表现为相互排斥,使氮化硅应力层具有膨胀的趋势;氮化硅应力层覆盖在凸起结构表面后,氮化硅应力层上的应力会作用在圆台的顶面和锥面上,由于圆台底部连接在下方的衬底上,作用在圆台上的应力又会进一步地向衬底深处传递,从而使应力作用到衬底内部,最终就能改变硅衬底的光吸收波长。
优选地,所述氮化硅应力层的厚度为100-300nm。
本发明还提出了一种硅基探测器的制作方法,其创新在于:所述方法包括:
光敏区制作好后,1)采用光刻工艺,在光敏区表面光刻出多个圆柱结构;
2)采用刻蚀工艺或腐蚀工艺对光敏区表面进行处理,将所述圆柱结构处理为下大上小的圆台;
3)采用PECVD工艺或LPCVD工艺,在光敏区表面淀积一定厚度的氮化硅膜;
4)采用光刻工艺对氮化硅膜进行处理,使氮化硅膜的形貌与多个圆台匹配;
5)采用刻蚀工艺,在氮化硅膜上刻蚀出隔离槽,隔离槽的深度达到光敏区表面,相邻圆台之间通过隔离槽隔离。
本领域技术人员应该清楚,硅基探测器上存在多种功能结构,本发明的主要创新点是在硅基探测器中设置氮化硅致应力结构,其他功能结构与本发明的创新点关联性不大,故前述方案中未对其他功能结构及相关制作工艺作详细介绍;具体实施时,可先按现有工艺制作出衬底、光敏区等结构,光敏区制作好后,先在光敏区上制作出氮化硅致应力结构,然后再按现有工艺制作出相应的引线层等结构。
本发明的有益技术效果是:提出了一种带氮化硅致应力结构的硅基探测器及制作方法,采用本发明方案后,可通过氮化硅应力层向衬底施加应力,从而使衬底持续受到应力作用,改变衬底的吸收特性。
附图说明
图1、本发明的硅基探测器的结构示意图;
图2、凸起结构放大图;
图3、微结构阵列俯视图;
图中各个标记所对应的名称分别为:光敏区1、凸起结构1-1、氮化硅应力层2、隔离槽3、本征层4、N型层5、下电极6、金属接触层7。
具体实施方式
一种带氮化硅致应力结构的硅基探测器,包括硅材质的光敏区1;其创新在于:所述光敏区1表面设置有微结构阵列,微结构阵列表面覆盖有氮化硅应力层2;所述微结构阵列由多个凸起结构1-1组成;单个凸起结构1-1为下大上小的圆台;所述氮化硅应力层2的形貌与凸起结构1-1匹配;相邻凸起结构1-1之间设置有隔离槽3,隔离槽3的深度达到光敏区1表面。
进一步地,所述氮化硅应力层2的厚度为100-300nm。
一种硅基探测器的制作方法,其创新在于:所述方法包括:
光敏区1制作好后,1)采用光刻工艺,在光敏区1表面光刻出多个圆柱结构;
2)采用刻蚀工艺或腐蚀工艺对光敏区1表面进行处理,将所述圆柱结构处理为下大上小的圆台;
3)采用PECVD工艺或LPCVD工艺,在光敏区1表面淀积一定厚度的氮化硅膜;
4)采用光刻工艺对氮化硅膜进行处理,使氮化硅膜的形貌与多个圆台匹配;
5)采用刻蚀工艺,在氮化硅膜上刻蚀出隔离槽3,隔离槽3的深度达到光敏区1表面,相邻圆台之间通过隔离槽3隔离。
Claims (3)
1.一种带氮化硅致应力结构的硅基探测器,包括硅材质的光敏区(1);其特征在于:所述光敏区(1)表面设置有微结构阵列,微结构阵列表面覆盖有氮化硅应力层(2);所述微结构阵列由多个凸起结构(1-1)组成;单个凸起结构(1-1)为下大上小的圆台;所述氮化硅应力层(2)的形貌与凸起结构(1-1)匹配;相邻凸起结构(1-1)之间设置有隔离槽(3),隔离槽(3)的深度达到光敏区(1)表面。
2.根据权利要求1所述的带氮化硅致应力结构的硅基探测器,其特征在于:所述氮化硅应力层(2)的厚度为100-300nm。
3.一种硅基探测器的制作方法,其特征在于:所述方法包括:
光敏区(1)制作好后,1)采用光刻工艺,在光敏区(1)表面光刻出多个圆柱结构;
2)采用刻蚀工艺或腐蚀工艺对光敏区(1)表面进行处理,将所述圆柱结构处理为下大上小的圆台;
3)采用PECVD工艺或LPCVD工艺,在光敏区(1)表面淀积一定厚度的氮化硅膜;
4)采用光刻工艺对氮化硅膜进行处理,使氮化硅膜的形貌与多个圆台匹配;
5)采用刻蚀工艺,在氮化硅膜上刻蚀出隔离槽(3),隔离槽(3)的深度达到光敏区(1)表面,相邻圆台之间通过隔离槽(3)隔离。
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Citations (5)
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WO2013040751A1 (en) * | 2011-09-20 | 2013-03-28 | Acm Research (Shanghai) Inc. | Method for forming air gap interconnect structure |
CN104241119A (zh) * | 2014-09-24 | 2014-12-24 | 上海华力微电子有限公司 | 双接触孔刻蚀停止层的制备方法 |
CN104409530A (zh) * | 2014-12-05 | 2015-03-11 | 西安电子科技大学 | 应变SiGeSn鳍型光电探测器 |
CN105977197A (zh) * | 2016-06-20 | 2016-09-28 | 西安电子科技大学 | 基于非晶化与尺度效应的SiN埋绝缘层上晶圆级单轴应变SiGe的制作方法 |
CN106129145A (zh) * | 2016-07-11 | 2016-11-16 | 中国电子科技集团公司第四十四研究所 | 1064nm增强型Si‑PIN光电探测器及其制作方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
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WO2013040751A1 (en) * | 2011-09-20 | 2013-03-28 | Acm Research (Shanghai) Inc. | Method for forming air gap interconnect structure |
CN104241119A (zh) * | 2014-09-24 | 2014-12-24 | 上海华力微电子有限公司 | 双接触孔刻蚀停止层的制备方法 |
CN104409530A (zh) * | 2014-12-05 | 2015-03-11 | 西安电子科技大学 | 应变SiGeSn鳍型光电探测器 |
CN105977197A (zh) * | 2016-06-20 | 2016-09-28 | 西安电子科技大学 | 基于非晶化与尺度效应的SiN埋绝缘层上晶圆级单轴应变SiGe的制作方法 |
CN106129145A (zh) * | 2016-07-11 | 2016-11-16 | 中国电子科技集团公司第四十四研究所 | 1064nm增强型Si‑PIN光电探测器及其制作方法 |
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