ATE295961T1 - Bilden einer zusammengesetzten druckmembran mit implantationen, epitaxie und einer siliziumnitrid schicht - Google Patents

Bilden einer zusammengesetzten druckmembran mit implantationen, epitaxie und einer siliziumnitrid schicht

Info

Publication number
ATE295961T1
ATE295961T1 AT01988501T AT01988501T ATE295961T1 AT E295961 T1 ATE295961 T1 AT E295961T1 AT 01988501 T AT01988501 T AT 01988501T AT 01988501 T AT01988501 T AT 01988501T AT E295961 T1 ATE295961 T1 AT E295961T1
Authority
AT
Austria
Prior art keywords
positive
epitaxial layer
layer
forming
substrate layer
Prior art date
Application number
AT01988501T
Other languages
English (en)
Inventor
Michael J Haji-Sheikh
Gilberto Morales
Original Assignee
Honeywell Int Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Int Inc filed Critical Honeywell Int Inc
Application granted granted Critical
Publication of ATE295961T1 publication Critical patent/ATE295961T1/de

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0055—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements bonded on a diaphragm
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
    • G01P2015/084—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass the mass being suspended at more than one of its sides, e.g. membrane-type suspension, so as to permit multi-axis movement of the mass

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)
  • Silicon Polymers (AREA)
  • Separation Using Semi-Permeable Membranes (AREA)
AT01988501T 2001-01-03 2001-12-20 Bilden einer zusammengesetzten druckmembran mit implantationen, epitaxie und einer siliziumnitrid schicht ATE295961T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/753,834 US6528340B2 (en) 2001-01-03 2001-01-03 Pressure transducer with composite diaphragm
PCT/US2001/051357 WO2002054032A1 (en) 2001-01-03 2001-12-20 Forming a composite pressure diaphragm with implantations, epitaxy, and a silicon nitride layer

Publications (1)

Publication Number Publication Date
ATE295961T1 true ATE295961T1 (de) 2005-06-15

Family

ID=25032352

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01988501T ATE295961T1 (de) 2001-01-03 2001-12-20 Bilden einer zusammengesetzten druckmembran mit implantationen, epitaxie und einer siliziumnitrid schicht

Country Status (6)

Country Link
US (2) US6528340B2 (de)
EP (1) EP1348110B1 (de)
JP (1) JP2004529319A (de)
AT (1) ATE295961T1 (de)
DE (1) DE60110928T2 (de)
WO (1) WO2002054032A1 (de)

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KR100647279B1 (ko) * 2003-11-14 2006-11-17 삼성전자주식회사 질화물계 발광소자 및 그 제조방법
US6945118B2 (en) * 2004-01-13 2005-09-20 Honeywell International Inc. Ceramic on metal pressure transducer
US7290453B2 (en) * 2004-12-28 2007-11-06 Amnon Brosh Composite MEMS pressure sensor configuration
US7210346B1 (en) 2005-12-21 2007-05-01 Honeywell International Inc. Modular sensing apparatus
US7266999B2 (en) * 2006-01-30 2007-09-11 Honeywell International Inc. Thick film technology based ultra high pressure sensor utilizing integral port and diaphragm construction
US7661318B2 (en) * 2006-02-27 2010-02-16 Auxitrol S.A. Stress isolated pressure sensing die, sensor assembly inluding said die and methods for manufacturing said die and said assembly
ATE503988T1 (de) * 2006-02-27 2011-04-15 Auxitrol Sa Spannungsisolierter drucksensorchip
US20070238215A1 (en) * 2006-04-07 2007-10-11 Honeywell International Inc. Pressure transducer with increased sensitivity
US8656772B2 (en) 2010-03-22 2014-02-25 Honeywell International Inc. Flow sensor with pressure output signal
US8616065B2 (en) 2010-11-24 2013-12-31 Honeywell International Inc. Pressure sensor
US8695417B2 (en) 2011-01-31 2014-04-15 Honeywell International Inc. Flow sensor with enhanced flow range capability
US9003899B2 (en) 2012-03-23 2015-04-14 Honeywell International Inc. Force sensor
US8806964B2 (en) 2012-03-23 2014-08-19 Honeywell International Inc. Force sensor
US9003897B2 (en) 2012-05-10 2015-04-14 Honeywell International Inc. Temperature compensated force sensor
US9052217B2 (en) 2012-11-09 2015-06-09 Honeywell International Inc. Variable scale sensor
US9267857B2 (en) 2014-01-07 2016-02-23 Honeywell International Inc. Pressure sensor having a bossed diaphragm
JP2015175833A (ja) * 2014-03-18 2015-10-05 セイコーエプソン株式会社 物理量センサー、高度計、電子機器および移動体
JP6212000B2 (ja) * 2014-07-02 2017-10-11 株式会社東芝 圧力センサ、並びに圧力センサを用いたマイクロフォン、血圧センサ、及びタッチパネル
EP3256831B1 (de) * 2015-02-12 2019-10-16 Honeywell International Inc. Mikromechanische vorrichtungen mit verbesserter aussparungs- oder vertiefungsstruktur
US9829406B2 (en) 2015-09-15 2017-11-28 Nxp Usa, Inc. Differential capacitive output pressure sensor and method
US9964458B2 (en) 2016-05-12 2018-05-08 Continental Automotive Systems, Inc. Pressure sensor device with anchors for die shrinkage and high sensitivity
US11029227B2 (en) * 2018-06-04 2021-06-08 Vitesco Technologies USA, LLC CSOI MEMS pressure sensing element with stress equalizers
DE102019207963B4 (de) * 2018-06-04 2023-11-09 Vitesco Technologies USA, LLC (n.d.Ges.d.Staates Delaware) Csoi - mems-druckerfassungselement mit spannungsausgleichern
CN112444338B (zh) * 2019-09-05 2024-07-05 三美电机株式会社 压力感测元件以及压力传感器

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US4867842A (en) 1982-09-30 1989-09-19 Honeywell Inc. Method of making slotted diaphragm semiconductor devices
US4904978A (en) * 1988-04-29 1990-02-27 Solartron Electronics, Inc. Mechanical sensor for high temperature environments
US5049460A (en) * 1988-05-31 1991-09-17 Siemens Aktiengesellschaft Method for producing beam-shaping diaphragms for lithographic devices
US5245504A (en) 1989-02-28 1993-09-14 United Technologies Corporation Methodology for manufacturing hinged diaphragms for semiconductor sensors
US5107309A (en) 1989-12-18 1992-04-21 Honeywell Inc. Double diffused leadout for a semiconductor device
US5174156A (en) 1990-07-27 1992-12-29 Honeywell Inc. Pressure transducer with reduced offset signal
US5156052A (en) * 1990-12-20 1992-10-20 Honeywell Inc. Ribbed and bossed pressure transducer
US5225377A (en) * 1991-05-03 1993-07-06 Honeywell Inc. Method for micromachining semiconductor material
US6140143A (en) 1992-02-10 2000-10-31 Lucas Novasensor Inc. Method of producing a buried boss diaphragm structure in silicon
US5323656A (en) * 1992-05-12 1994-06-28 The Foxboro Company Overpressure-protected, polysilicon, capacitive differential pressure sensor and method of making the same
JP2652589B2 (ja) 1993-01-19 1997-09-10 フラウンホーファー・ゲゼルシャフト ツア フェルデルンク デル アンゲワンテン フォルシュンク アインゲトラーゲナー フェライン 圧力センサ
US5360521A (en) 1993-11-12 1994-11-01 Honeywell Inc. Method for etching silicon
US5949118A (en) * 1994-03-14 1999-09-07 Nippondenso Co., Ltd. Etching method for silicon substrates and semiconductor sensor
EP0672899B1 (de) * 1994-03-18 1999-10-06 The Foxboro Company Halbleiter-Druckwandler mit Einkristall-Silizium-Membran und Einkristall-Dehnungsmessstreifen und Herstellungsverfahren dazu
US5412994A (en) 1994-06-14 1995-05-09 Cook; James D. Offset pressure sensor
JPH098326A (ja) 1995-06-15 1997-01-10 Matsushita Electric Works Ltd 半導体圧力センサ
JPH10132682A (ja) 1996-11-05 1998-05-22 Hitachi Ltd 半導体圧力センサとその製造方法及びこれを用いた複合伝送器
US5792958A (en) 1997-01-21 1998-08-11 Honeywell Inc. Pressure sensor with a compressible insert to prevent damage from freezing
CA2251957C (en) * 1997-02-21 2003-07-01 Matsushita Electric Works, Ltd. Acceleration sensor element and method of its manufacture
JP3873454B2 (ja) * 1998-05-29 2007-01-24 株式会社デンソー 半導体圧力センサ
US6093579A (en) 1998-06-01 2000-07-25 Exar Corporation Low pressure sensor with a thin boss and method of manufacture
US6006607A (en) * 1998-08-31 1999-12-28 Maxim Integrated Products, Inc. Piezoresistive pressure sensor with sculpted diaphragm
JP3517876B2 (ja) * 1998-10-14 2004-04-12 セイコーエプソン株式会社 強誘電体薄膜素子の製造方法、インクジェット式記録ヘッド及びインクジェットプリンタ

Also Published As

Publication number Publication date
US20020083775A1 (en) 2002-07-04
JP2004529319A (ja) 2004-09-24
US6528340B2 (en) 2003-03-04
DE60110928D1 (de) 2005-06-23
WO2002054032A1 (en) 2002-07-11
EP1348110A1 (de) 2003-10-01
US20030190765A1 (en) 2003-10-09
EP1348110B1 (de) 2005-05-18
DE60110928T2 (de) 2006-04-27
US6796193B2 (en) 2004-09-28

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