CN104393095B - N-type silicon solar cell, its preparation method and aluminum evaporation disperser - Google Patents
N-type silicon solar cell, its preparation method and aluminum evaporation disperser Download PDFInfo
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- CN104393095B CN104393095B CN201410499976.8A CN201410499976A CN104393095B CN 104393095 B CN104393095 B CN 104393095B CN 201410499976 A CN201410499976 A CN 201410499976A CN 104393095 B CN104393095 B CN 104393095B
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 159
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 157
- 239000010703 silicon Substances 0.000 title claims abstract description 157
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 110
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 105
- 238000002360 preparation method Methods 0.000 title claims abstract description 27
- 238000001704 evaporation Methods 0.000 title abstract description 30
- 230000008020 evaporation Effects 0.000 title abstract description 30
- 238000009792 diffusion process Methods 0.000 claims abstract description 77
- 238000000034 method Methods 0.000 claims abstract description 46
- 238000000151 deposition Methods 0.000 claims abstract description 30
- 230000008021 deposition Effects 0.000 claims abstract description 28
- 238000002207 thermal evaporation Methods 0.000 claims abstract description 21
- 239000010409 thin film Substances 0.000 claims abstract description 18
- 238000010438 heat treatment Methods 0.000 claims abstract description 14
- 238000002161 passivation Methods 0.000 claims description 31
- 235000008216 herbs Nutrition 0.000 claims description 22
- 210000002268 wool Anatomy 0.000 claims description 22
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 19
- 229910052698 phosphorus Inorganic materials 0.000 claims description 18
- 239000011574 phosphorus Substances 0.000 claims description 18
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 12
- 239000011521 glass Substances 0.000 claims description 8
- 238000003854 Surface Print Methods 0.000 claims description 7
- 238000010306 acid treatment Methods 0.000 claims description 5
- 230000004807 localization Effects 0.000 claims description 5
- 230000008859 change Effects 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 239000004411 aluminium Substances 0.000 abstract description 27
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract description 10
- 229910052796 boron Inorganic materials 0.000 abstract description 10
- 239000012535 impurity Substances 0.000 abstract description 7
- 239000007788 liquid Substances 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000003491 array Methods 0.000 abstract description 3
- 238000007639 printing Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 29
- 238000000231 atomic layer deposition Methods 0.000 description 14
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 12
- 230000008569 process Effects 0.000 description 11
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 9
- 239000007789 gas Substances 0.000 description 7
- 238000007650 screen-printing Methods 0.000 description 5
- 238000005245 sintering Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 4
- 229910004205 SiNX Inorganic materials 0.000 description 4
- 238000003475 lamination Methods 0.000 description 4
- 230000009466 transformation Effects 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
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- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
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- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 206010054949 Metaplasia Diseases 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 208000025174 PANDAS Diseases 0.000 description 1
- 208000021155 Paediatric autoimmune neuropsychiatric disorders associated with streptococcal infection Diseases 0.000 description 1
- 240000000220 Panda oleosa Species 0.000 description 1
- 235000016496 Panda oleosa Nutrition 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- RSWGJHLUYNHPMX-ONCXSQPRSA-N abietic acid Chemical compound C([C@@H]12)CC(C(C)C)=CC1=CC[C@@H]1[C@]2(C)CCC[C@@]1(C)C(O)=O RSWGJHLUYNHPMX-ONCXSQPRSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- JEGUKCSWCFPDGT-UHFFFAOYSA-N h2o hydrate Chemical compound O.O JEGUKCSWCFPDGT-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 230000015689 metaplastic ossification Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000005201 scrubbing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- -1 silver aluminum Chemical compound 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 239000001117 sulphuric acid Substances 0.000 description 1
- 235000011149 sulphuric acid Nutrition 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Development (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention provides a kind of n-type silicon solar cell, its preparation method and aluminum evaporation disperser, the preparation method of n-type silicon solar cell comprises the following steps, by the method for thermal evaporation deposition of aluminum thin film on silicon chip, or by diffusion mask, it is selectively deposited at silicon chip surface, then heating silicon chip realizes aluminum and diffuses to form pn-junction, prepares n-type silicon solar cell.The invention also discloses a kind of aluminum evaporation disperser for preparing n-type silicon solar cell, this apparatus structure is simple, reasonable, compact, this device is designed with diffusion broad-mouthed receptacle for holding liquid and silicon chip arrays carrier, uses this device can once deposition of aluminum thin film on one or more silicon chips.The present invention utilizes the diffusion technique of aluminothermy evaporation tank can carry out aluminum diffusion at a lower temperature, avoid the damage that in conventional n-type silicon solar cell technique, high temperature boron diffusion couple silicon chip causes, and the impurity utilizing aluminium paste method for printing screen to bring pollutes, it is suitable for solar cell industrial mass manufacture.
Description
Technical field
The present invention relates to semiconductor fabrication, particularly relate to a kind of n-type silicon solar cell, its preparation method
And aluminum evaporation disperser.
Background technology
In recent years, n-type silicon solar cell is because of its superior electric property, minority carrier lifetime length, easily
Increasingly favored by people in passivation, conversion efficiency advantages of higher high to the tolerance of impurity.Pass
The pn-junction of the n-type silicon battery of system is realized by the diffusion of boron, such as: the IBC of SunPower company of the U.S.
Structure silicon solar cell, and the panda silion cell of China's English profit.But, boron diffusion in silicon needs
Carry out 900 DEG C of high temperature above, therefore often lead to silicon chip damage.And high-temperature sintering process produces
Harmful B-O complex centre, minority carrier life time can be caused to decline, reduce cell conversion efficiency.For overcoming this
One defective workmanship, some scientific research institutions attempt the replacement utilizing the relatively large aluminum of diffusion coefficient as boron recently
Product prepare n-type silicon battery.At present, industrial aluminum diffusion all uses the side of silk screen printing aluminium paste, guipure sintering
Formula.But this process characteristic has the biggest restriction to the lifting of battery efficiency, its performance essentially consists in:
(1), (punctuate) aluminium paste complicated, impure more.Aluminium paste composition is gone back in addition to containing aluminium powder
Comprise frit, organic carrier etc..Many impurity, through sintering process, is unfavorable for forming preferable pn
Knot space-charge region.
(2), the measure using later stage lifting battery efficiency of aluminium paste is difficult to carry out.For reducing battery surface
Carrier recombination, it is often necessary to take passivation emitter, and be prepared by the contact area reducing metal and silicon
Electrodes selective.By silk screen printing aluminium paste and sinter after, can cell backside residual aluminium paste adhesive layer and
Sial congruent melting layer.Being necessary for removing aluminium paste layer and congruent melting layer if carried out processes such as passivation, this process needs
The chemical reagent of flood tide to be expended, is therefore difficult to realize on producing.
(3), the uniformity of aluminium paste printing is difficult to control.Owing to the technique of silk screen printing is that aluminium paste is prior
Being deposited in half tone one end, then aluminium paste is disposably pushed through by scrubbing brush the whole region of half tone, aluminium paste is often
The most uniform.Therefore the p formed after sintering+Layer easily occurs that variable thickness, pn-junction are uneven, thus
The situations such as battery drain are caused to produce.
So, by above cause influence, it is currently in bottle with the research and development of the standby n-type silicon battery of aluminum diffusion
Neck, conversion efficiency is difficult to increase substantially always.
Summary of the invention
It is an object of the invention to, for above-mentioned existing employing silk screen printing aluminium paste, the mode of guipure sintering
Prepare n-type silicon solar cell and have that impurity is many, P+Layer thickness differs the problem causing battery efficiency low, carries
Going out the preparation method of a kind of n-type silicon solar cell, the n-type silicon solar cell using the method to prepare is pure
Degree is high, P+Layer thickness is homogeneous so that battery efficiency is high, and the method step is easy, easy, it is simple to work
Industry metaplasia is produced.
For achieving the above object, the technical solution used in the present invention is: the system of a kind of n-type silicon solar cell
Preparation Method, comprises the following steps, and by the method for thermal evaporation deposition of aluminum thin film on silicon chip, and heats silicon
Sheet realizes aluminum and diffuses to form pn-junction, prepares n-type silicon solar cell.
Further, the preparation method of front knot n-type silicon solar cell comprises the following steps:
(1), clean n-type silicon chip, damage is gone on surface；
(2), making herbs into wool is etched at n-type silicon chip front surface；
(3), carry out phosphorus diffusion at back surface, form n+District, and clean remove phosphorosilicate glass；
(4), by the method for thermal evaporation n-type silicon chip front surface deposition of aluminum after making herbs into wool, silicon chip is heated
Realize aluminum diffusion, form pn-junction, and with acid treatment attachment removal thing；
(5), PECVD or ALD is utilized to have the passivation layer of antireflection characteristic in front surface deposition,
Wherein PECVD is: Plasma Enhanced Chemical Vapor Deposition, and plasma increases
Extensive chemical vapour deposition process；ALD is: Atomic Layer Deposition, atomic layer deposition system；
(6), if carried out back surface passivation, then PECVD or ALD is utilized to be passivated in back surface system
Layer；If be not passivated, this step can be omitted；
(7), before n-type silicon chip, back surface print electrode respectively, and sinter, prepare n-type silicon
Solar cell.
Further, the preparation method of back of the body knot n-type silicon solar cell comprises the following steps:
(1), clean n-type silicon chip, damage is gone on surface；
(2), making herbs into wool is etched at n-type silicon chip front surface；
(3) front surface, after making herbs into wool carries out front court phosphorus diffusion, forms n+District, and clean dephosphorization silicon
Glass；
(4) technology such as PECVD or ALD, are utilized to have the blunt of antireflection characteristic in front surface deposition
Change layer；
(5), Current surface be phosphorus diffusion time, by the method for thermal evaporation n-type silicon chip back surface deposit
Aluminum, heating silicon chip realizes aluminum diffusion, forms pn-junction；
(6), if carried out back surface passivation, then remove the aluminum of back surface attachment, then utilize PECVD
Or ALD is at back surface passivation layer；If be not passivated, this step can be omitted；
(7) before n-type silicon chip, back surface print electrode respectively, and sinter, prepare the back of the body knot n
Type silicon solar cell.
Further, by the method for thermal evaporation on silicon chip during deposition of aluminum thin film, gross area on silicon chip
Deposition of aluminum thin film；Or use diffusion mask version, make selectivity localization deposition of aluminum thin film on silicon chip.
Further, the diffusion source that described thermal evaporation uses is fine aluminium.
Further, the temperature of described heating silicon chip is 300-800 DEG C.
Further, described making herbs into wool many employings chemical method；Described making herbs into wool structure is pyramid, tower height
2～3 microns.
Another object of the present invention also discloses a kind of n-type silicon solar cell, uses above-mentioned n-type silicon too
The preparation method in positive electricity pond is prepared from, and this n-type silicon solar cell has the photoelectric transformation efficiency of excellence.
Another object of the present invention also discloses a kind of aluminum evaporation for preparing n-type silicon solar cell and expands
In bulk put, use this device can once deposition of aluminum thin film on one or more silicon chips, it is achieved n-type silicon
The industrialized production of solar cell.
For achieving the above object, the technical solution used in the present invention is: one is used for preparing the n-type silicon sun
The aluminum evaporation disperser of battery, including: body of heater, it is respectively arranged with down from bottom to top in described body of heater and adds
Hot stove silk, aluminum evaporation source mounting table, slide holder and upper heating furnace silk, described slide holder is put with aluminum evaporation source
Put on the sidewall of the furnace body between platform relative to be provided with air inlet and gas outlet.
Further, described slide holder is divided into multiple carrier, is used for carrying multiple n-type silicon chip.
Further, on described slide holder, diffusion mask version below n-type silicon chip, it is provided with.
The operation principle of the described aluminum evaporation disperser for preparing n-type silicon solar cell: first will diffusion
Mask is placed in slide holder carrier groove, is placed on diffusion mask version by silicon chip to be spread, waits to spread
Face down (i.e. treating that diffusingsurface is towards diffusion mask version)；Extract the air in body of heater out, be filled with protective gas
(such as one or more in nitrogen, hydrogen, argon)；Heating aluminum diffusion source carries out aluminum diffusion.
Inventive n-type silicon solar cell is simple and reasonable for structure, its preparation method science, easy, with existing
Have technology to compare to have the advantage that
(1) method that the present invention utilizes thermal evaporation, can be for spreading relative to boron, lower temperature
Aluminum diffusion is carried out under (< 600 DEG C).Or when relatively high diffusivity temperature (> 600 DEG C), relative to boron spread
For, it is achieved the short time spreads.Avoid boron high temperature long-time diffusion couple silicon in conventional n-type battery process
The damage that sheet causes.Thermal evaporation the most of the present invention uses rafifinal as diffusion source, abandons aluminium paste and silk screen
With aluminium paste for diffusion source in typography, the most significantly avoid or reduce impurity in diffusion process aluminium paste and mix
The trapping centre formed after entering silicon chip.
(2) pn-junction that this method diffuses to form only has a small amount of very thin aluminum to adhere to silicon face, and thin and thick is homogeneous, carries
High p+District's uniformity, is effectively improved the photoelectric transformation efficiency of solar cell；The present invention passes through thermal evaporation side
Aluminium lamination prepared by method is very thin only needs simple acid treatment, can carry out emitter stage passivation, it is simple to promote n-type silicon
The transformation efficiency of solar cell.
(3) the aluminum evaporation disperser for preparing n-type silicon solar cell disclosed by the invention is designed with expansion
Dissipate broad-mouthed receptacle for holding liquid and silicon chip arrays carrier, use this device can once on one or more silicon chips deposition of aluminum thin
Film, it is achieved the industrialized production of n-type silicon solar cell.
To sum up, inventive n-type silicon solar cell preparation method cleaning is convenient, and device economy is simple, is suitable to
Being combined with existing silicon solar cell industrial production line, many diffusion broad-mouthed receptacle for holding liquid designs can realize batch and spread.Additionally,
This aluminothermy evaporation tank can assist use diffusion mask version, and silicon chip carries out selectivity localization diffusion, permissible
For producing interdigital structure (IBC) battery of back junction back contact, it is also possible to for passivated emitter and
The production of the multiple battery such as back surface battery (PERC).
Accompanying drawing explanation
Fig. 1 is embodiment 1, the preparation method flow chart of connection solar cell before n-type silicon；
Fig. 2 is embodiment 2, the preparation method flow chart of n-type silicon back of the body connection solar cell；
Fig. 3 is the structural representation of connection solar cell before the n-type silicon that embodiment 1 prepares；
Fig. 4 is the structural representation of the n-type silicon back of the body connection solar cell that embodiment 2 prepares；
Fig. 5 is the structural representation of the n-type silicon back of the body connection solar cell that embodiment 3 prepares；
Fig. 6 is that the present invention is for preparing the structural representation of the aluminum evaporation disperser of n-type silicon solar cell；
Fig. 7 is the array carrier configuration schematic diagram of silicon chip and mask；
Fig. 8 is the structural representation of diffusion mask version one；
Fig. 9 is the structural representation of diffusion mask version two.
Wherein 1-anti-reflection, passivation layer；Electrode before 2-；3-phosphorus diffusion field；4-back electrode；5-aluminum diffusion p+Layer；
6-back surface passivation layer；7-phosphorus heavily doped region；101-upper heating furnace silk；102-sealed gas chamber；103-slide glass
Platform；104-evaporates broad-mouthed receptacle for holding liquid；105-gas outlet；106-aluminum evaporation source mounting table；Heating furnace silk under 107-；108-enters
QI KOU；109-n type alsifilm to be expanded；110-silicon chip arrays carrier；111-diffusion mask version；112-mask
Version array carrier.
Detailed description of the invention
The preparation method of the present invention a kind of n-type silicon solar cell, including clean n-type silicon chip, surface go damage,
The etching making herbs into wool of n-type silicon chip front surface, phosphorus diffusion, aluminum evaporation and diffusion, chemical attack and cleaning treatment, utilize
PECVD or ALD deposition passivation layer, the step such as print electrode.
Below in conjunction with specific embodiment, the present invention is further described:
Embodiment 1
Fig. 1 is the preparation method flow chart of connection solar cell before embodiment 1n type silicon；Fig. 6 be the present invention for
Prepare the structural representation of the aluminum evaporation disperser of n-type silicon solar cell；Fig. 3 is that embodiment 1 is prepared into
The structural representation of connection solar cell before the n-type silicon arrived；Fig. 7 is the array carrier knot of silicon chip and mask
Structure schematic diagram.
The present embodiment relates to the preparation method of connection solar cell before a kind of n-type silicon, and the method passes through thermal evaporation
Method deposition of aluminum thin film on silicon chip, and heat silicon chip and realize aluminum and diffuse to form pn-junction, obtain n-type silicon
Front connection solar cell.
For by thermal evaporation deposition of aluminum thin film on silicon chip, the present embodiment employs prepares n-type silicon sun electricity
The aluminum evaporation disperser in pond, as shown in Figure 6, this device includes: body of heater, from lower in described body of heater
On be respectively arranged with lower heating furnace silk 107, aluminum evaporation source mounting table 106, slide holder 103 and upper heating furnace
Silk 101.Described aluminum evaporation source mounting table 106 is controllable temperature structure, can realize temperature control during aluminum evaporation
System.Body of heater between described slide holder 103 and aluminum evaporation source mounting table 106 is evaporation broad-mouthed receptacle for holding liquid 104, described
On sidewall of the furnace body between slide holder 103 with aluminum evaporation source mounting table 106 relative to be provided with air inlet
108 and gas outlet 105.Body of heater between described slide holder 103 and upper heating furnace silk 101 is sealed gas chamber
102。
As it is shown in fig. 7, described slide holder 103 is divided into multiple carrier, it is used for carrying multiple N-shaped
Silicon chip 9.On described slide holder 103, below n-type silicon chip 109, it is provided with diffusion mask version 111.
Specifically, before described n-type silicon, the preparation method of connection solar cell comprises the following steps:
(1) clean n-type silicon chip, damage is gone on surface；
1.1 add acetone, ethanol solution ultrasonic cleaning degreasing successively in the container be filled with silicon chip, take out
Silicon chip；
1.2 cleanout fluid adding I solution in the container be filled with silicon chip boil to hydrogen peroxide and decompose completely,
Remove metallic pollution and organic contamination；I solution is mixed (dense by concentrated sulphuric acid and hydrogen peroxide
H2SO4:H2O2=5:1, V:V).
1.3 in the container be filled with silicon chip add No. II, III solution respectively boil 10 minutes, remove silicon chip table
The organic impurities such as cured, the Colophonium alive of the photoresist on face, and active metal (aluminum, zinc), burning
Thing (calcium oxide, ferrum oxide), hydroxide, sulfide, carbonate etc..II solution formula be by hydrochloric acid,
The acid wash liquid that hydrogen peroxide, deionized water are mixed by 1:1:8 volume ratio；III solution is by ammonia
The alkaline rinse that water, hydrogen peroxide and deionized water are mixed by 1:1:5 volume ratio.
The volume ratio that corrosive liquid is acid concentrated nitric acid and Fluohydric acid. going damage for surface is that 5:1 mixes
Solution, or for the aqueous slkalis such as sodium hydroxide that mass percentage concentration is 20%, potassium hydroxide, solution temperature
It it is 85 DEG C.
Polishing process of the present invention, the polishing solution of employing includes but not limited to sodium hydroxide solution or potassium hydroxide
Solution, described sodium hydroxide solution mass concentration is more than 1.8%.
(2) chemical method is used to etch making herbs into wool at n-type silicon chip front surface；Use making herbs into wool solution include but
Being not limited to dilute solution of sodium hydroxide (mass concentration is 1%), corrosion temperature is about 80 DEG C, and making herbs into wool is tied
Structure is pyramid, tower height 2～3 microns.
(3) operation principle using above-mentioned aluminum evaporation disperser to prepare n-type silicon solar cell is as follows: first
Diffusion mask version is placed in slide holder carrier groove, silicon chip to be spread is placed on diffusion mask version,
Treat that diffusingsurface is downwards (i.e. treating that diffusingsurface is towards diffusion mask version)；Extract the air in body of heater out, be filled with nitrogen
Gas；Heating aluminum diffusion source carries out aluminum diffusion, by the method for thermal evaporation, with fine aluminium for diffusion source in making herbs into wool
After n-type silicon chip front surface deposition of aluminum.
Heating silicon chip 300～800 DEG C realize aluminum diffusion, form pn-junction, and with acid treatment attachment removal thing；
By the method for thermal evaporation on silicon chip during deposition of aluminum thin film, gross area deposition of aluminum thin film on silicon chip；Or
Use diffusion mask version, make selectivity localization deposition of aluminum thin film on silicon chip.The present embodiment i.e. uses diffusion to cover
Masterplate is selectivity localization deposition of aluminum thin film on silicon chip.
For boron spreads, this technique achieves low temperature (< 600 DEG C) diffusion.Or in relatively high diffusivity
(> 600 DEG C during temperature), spread relative to boron, diffusion can be completed the short time.Following aluminum technique describes
In, run into Similar Problems, no longer repeat.
(4) PECVD or ALD is utilized to deposit anti-reflection, passivation layer at front surface；
(5) carry out front court phosphorus diffusion at n-type silicon chip back surface, form n+District, and clean dephosphorization silicon glass
Glass；
(6) utilize PECVD or ALD at back surface passivation layer；
(7) before n-type silicon chip, back surface print electrode respectively, and at 800 DEG C sinter, be prepared into
Connection solar cell before n-type silicon.
The structure of the n-type silicon back of the body connection solar cell prepared is as it is shown on figure 3, include 1-anti-reflection, passivation layer；
Electrode before 2-；3-phosphorus diffusion field；4-back electrode；5-aluminum diffusion p+Layer and 6-back surface passivation layer.
The present embodiment utilizes the method for thermal evaporation can carry out aluminum diffusion at a lower temperature, it is to avoid traditional n
The damage that in type battery process, high temperature boron diffusion couple silicon chip causes；In addition thermal evaporation uses rafifinal as expansion
Dissipate source, abandon in aluminium paste and silk-screen printing technique with aluminium paste for diffusion source, significantly avoid or reduce diffusion
The trapping centre formed after impurity is mixed into silicon chip in process aluminium paste；The pn-junction that this method diffuses to form is the most a small amount of
Very thin aluminum attachment silicon face, thin and thick is homogeneous；The present embodiment prepares very thin aluminium lamination by thermal evaporation method only to be needed
Simple acid treatment, can carry out emitter stage passivation, it is simple to promote the transformation efficiency of n-type silicon solar cell.
Embodiment 2
Fig. 2 is the preparation method flow chart of embodiment 2n type silicon back of the body connection solar cell；Fig. 4 is that embodiment 2 is made
The structural representation of the standby n-type silicon back of the body connection solar cell obtained；Fig. 8 is the structural representation of diffusion mask version one
Figure；
The present embodiment uses the aluminum evaporation diffusion dress for preparing n-type silicon solar cell same as in Example 1
Put.
The preparation method of the present embodiment n-type silicon back of the body connection solar cell is as in figure 2 it is shown, comprise the following steps:
(1) clean and to polish the step of n-type silicon chip same as in Example 1；
(2) chemical method is utilized to etch making herbs into wool at the front surface of silicon.Making herbs into wool structure is pyramid, tower height 2-3
Micron；
(3) surface after making herbs into wool carries out front court phosphorus diffusion, forms n+District, and clean remove phosphorosilicate glass；
(4) PECVD or ALD is utilized to deposit SiNx anti-reflection, passivation layer at front surface；Use Fig. 8 institute
Show diffusion mask version, by aluminothermy evaporation tank in back surface aluminum diffusing, form pn-junction；
(5) use aluminum evaporation disperser, with fine aluminium for diffusion source, carried on the back in n-type silicon chip by thermal evaporation
Surface deposition of aluminum, heating silicon chip realizes aluminum diffusion to 300～800 DEG C, forms pn-junction, with concentration for 37%
HCl boiling solution clean by the aluminium lamination of surface attachment；
(6) utilize PECVD or ALD in back surface depositing Al2O3/ SiNx passivation layer；
(7) front, back surface prints silver, silver aluminum electrode respectively, and sinters at 800 DEG C.
The n-type silicon prepared carries on the back the structure of connection solar cell as shown in Figure 4, including 1-anti-reflection, passivation layer；
Electrode before 2-；3-phosphorus diffusion front court；4-back electrode；5-aluminum diffusion p+Layer and 6-back surface passivation layer.
Embodiment 3
Fig. 5 is the structural representation of the n-type silicon back of the body connection solar cell that embodiment 3 prepares；Fig. 9 is for expanding
Dissipate the structural representation of mask two.
The present embodiment uses the aluminum evaporation diffusion dress for preparing n-type silicon solar cell same as in Example 1
Put.
The preparation method of the interdigital N-shaped single crystal silicon solar cell of the present embodiment N-shaped back junction back contact is as follows:
(1) clean and to polish the method for n-type silicon chip same as in Example 1；
(2) utilizing chemical method to etch making herbs into wool at the front surface of silicon, making herbs into wool structure is pyramid, tower height 2-3
Micron；
(3) front surface after making herbs into wool carries out front court phosphorus diffusion, forms n+District；
(4) PECVD or ALD is utilized to deposit SiNx anti-reflection, passivation layer at front surface；
(5) utilize mask, expand phosphorus by printing phosphorus slurry at back surface, form n+District, and clean dephosphorization silicon
Glass；Use diffusion mask version shown in Fig. 9, by aluminothermy evaporation tank in back surface aluminum diffusing, form p+District,
And clean by the aluminium lamination of surface attachment with HCl boiling solution；
(6) PECVD or ALD back surface depositing Al is utilized2O3/ SiNx passivation layer；
(7) front, back surface prints silver, aluminum electrode respectively, and sinters at 800 DEG C.
The interdigital N-shaped single crystal silicon solar cell of the N-shaped back junction back contact prepared is as it is shown in figure 5, include
1-anti-reflection, passivation layer；3-phosphorus diffusion front court；4-back electrode；5-aluminum diffusion p+Layer；6-back surface passivation layer and
7-phosphorus heavily doped region.
It should be noted that n-type silicon solar cell preparation process includes making herbs into wool, diffusion, electricity in the present invention
The process such as is prepared in pole, it is possible to understand that can also include other techniques prepared by n-type silicon solar cell, such as one side
Polishing, pn-junction are thinning, burn into annealing process etc. again in specific gas atmosphere.
Last it is noted that various embodiments above is only in order to illustrate technical scheme, rather than to it
Limit；Although the present invention being described in detail with reference to foregoing embodiments, the ordinary skill of this area
Personnel it is understood that the technical scheme described in foregoing embodiments still can be modified by it, or
The most some or all of technical characteristic is carried out equivalent；And these amendments or replacement, do not make phase
The essence answering technical scheme departs from the scope of various embodiments of the present invention technical scheme.
Claims (2)
1. the preparation method of a n-type silicon solar cell, it is characterised in that comprise the following steps, pass through
The method of thermal evaporation deposition of aluminum thin film on silicon chip, and heat silicon chip and realize aluminum and diffuse to form pn-junction, preparation
N-type silicon solar cell；
Described n-type silicon solar cell is front knot n-type silicon solar cell or back of the body knot n-type silicon solar cell；
The preparation method of front knot n-type silicon solar cell comprises the following steps:
(1-1), clean n-type silicon chip, damage is gone on surface；
(1-2), making herbs into wool is etched at n-type silicon chip front surface；
(1-3), carry out phosphorus diffusion at back surface, form n+District, and clean remove phosphorosilicate glass；
(1-4), by the method for thermal evaporation n-type silicon chip front surface deposition of aluminum after making herbs into wool, silicon is heated
Sheet realizes aluminum diffusion, forms pn-junction, and with acid treatment attachment removal thing；
(1-5) PECVD or ALD, is utilized to have the passivation layer of antireflection characteristic in front surface deposition；
(1-6), back surface can be passivated or be not passivated, carry out back surface passivation, utilize PECVD
Or ALD is at back surface passivation layer；It is not passivated, utilizes PECVD or ALD in back surface system
The step of passivation layer is omitted；
(1-7), before n-type silicon chip, back surface print electrode respectively, and sinter, prepare N-shaped
Silicon solar cell；
The preparation method of back of the body knot n-type silicon solar cell comprises the following steps:
(2-1), clean n-type silicon chip, damage is gone on surface；
(2-2), making herbs into wool is etched at n-type silicon chip front surface；
(2-3) front surface, after making herbs into wool carries out front court phosphorus diffusion, forms n+District, and clean dephosphorization
Silica glass；
(2-4) PECVD or ALD technique, is utilized to have the blunt of antireflection characteristic in front surface deposition
Change layer；
(2-5), front surface be phosphorus diffusion, by the method for thermal evaporation in n-type silicon chip back surface deposition of aluminum,
Heating silicon chip realizes aluminum diffusion, forms pn-junction；
(2-6), back surface can be passivated or be not passivated, carry out back surface passivation, remove back of the body table
The aluminum of face attachment, then utilizes PECVD or ALD at back surface passivation layer；It is not passivated, removes
The aluminum of back surface attachment, then utilizes PECVD or ALD to omit in the step of back surface passivation layer；
(2-7), before n-type silicon chip, back surface print electrode respectively, and sinter, prepare the back of the body knot
N-type silicon solar cell.
The preparation method of n-type silicon solar cell the most according to claim 1, it is characterised in that pass through
The method of thermal evaporation on silicon chip during deposition of aluminum thin film, gross area deposition of aluminum thin film on silicon chip；Or use
Diffusion mask version, makes selectivity localization deposition of aluminum thin film on silicon chip.
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