CN104393095A - N-type silicon solar cell, preparation method thereof, and aluminum evaporation diffusion apparatus - Google Patents
N-type silicon solar cell, preparation method thereof, and aluminum evaporation diffusion apparatus Download PDFInfo
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- CN104393095A CN104393095A CN201410499976.8A CN201410499976A CN104393095A CN 104393095 A CN104393095 A CN 104393095A CN 201410499976 A CN201410499976 A CN 201410499976A CN 104393095 A CN104393095 A CN 104393095A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 161
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 161
- 239000010703 silicon Substances 0.000 title claims abstract description 161
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 119
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 114
- 238000009792 diffusion process Methods 0.000 title claims abstract description 81
- 238000002360 preparation method Methods 0.000 title claims abstract description 42
- 238000001704 evaporation Methods 0.000 title claims abstract description 38
- 230000008020 evaporation Effects 0.000 title claims abstract description 37
- 238000000034 method Methods 0.000 claims abstract description 44
- 238000000151 deposition Methods 0.000 claims abstract description 32
- 230000008021 deposition Effects 0.000 claims abstract description 29
- 238000010438 heat treatment Methods 0.000 claims abstract description 20
- 238000005516 engineering process Methods 0.000 claims abstract description 4
- 239000004411 aluminium Substances 0.000 claims description 59
- 238000002161 passivation Methods 0.000 claims description 36
- 235000008216 herbs Nutrition 0.000 claims description 22
- 210000002268 wool Anatomy 0.000 claims description 22
- 238000002207 thermal evaporation Methods 0.000 claims description 20
- 229910052698 phosphorus Inorganic materials 0.000 claims description 18
- 239000011574 phosphorus Substances 0.000 claims description 18
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 18
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 12
- 238000004140 cleaning Methods 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 8
- 238000003854 Surface Print Methods 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 7
- 238000010306 acid treatment Methods 0.000 claims description 5
- 238000010276 construction Methods 0.000 claims 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract description 10
- 229910052796 boron Inorganic materials 0.000 abstract description 10
- 239000012535 impurity Substances 0.000 abstract description 7
- 238000007650 screen-printing Methods 0.000 abstract description 7
- 239000002002 slurry Substances 0.000 abstract description 2
- 238000010923 batch production Methods 0.000 abstract 1
- 238000000231 atomic layer deposition Methods 0.000 description 14
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 12
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- 239000007788 liquid Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000005245 sintering Methods 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 4
- 229910004205 SiNX Inorganic materials 0.000 description 4
- 238000003475 lamination Methods 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- 208000025174 PANDAS Diseases 0.000 description 1
- 208000021155 Paediatric autoimmune neuropsychiatric disorders associated with streptococcal infection Diseases 0.000 description 1
- 240000000220 Panda oleosa Species 0.000 description 1
- 235000016496 Panda oleosa Nutrition 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000005201 scrubbing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides an n-type silicon solar cell, a preparation method thereof, and an aluminum evaporation diffusion apparatus. The preparation method of the n n-type silicon solar cell comprises the following steps: depositing an aluminum film on a silicon chip through a heat evaporation method, or by means of a diffusion mask, performing selective deposition on the surface of the silicon chip, then heating the silicon chip to realize aluminum diffusion to form a pn junction, and preparing the n-type silicon solar cell. The invention also discloses an aluminum evaporation diffusion apparatus for preparing the n-type silicon solar cell. The apparatus is simple, reasonable and compact in structure. The apparatus is provided with diffusion containers and a silicon chip array bearing frame. By use of the apparatus, the aluminum film can be deposited on one or more silicon chips at a time. According to the invention, by use of a diffusion technology of an aluminum heat evaporation pool, aluminum can be diffused at a quite low temperature, damage caused by high-temperature boron diffusion in a conventional n-type silicon solar cell process to the silicon chip and impurity pollution brought by use of an aluminum slurry screen printing method can be avoided. Therefore, the n-type solar cell, the method and the apparatus are suitable for batch production in a solar cell industry.
Description
Technical field
The present invention relates to semiconductor fabrication, particularly relate to a kind of N-shaped silicon solar cell, its preparation method and aluminum evaporation disperser.
Background technology
In recent years, N-shaped silicon solar cell because its superior electric property, minority carrier lifetime are long, be easy to passivation, the favor that high to the tolerance of impurity, conversion efficiency advantages of higher is more and more subject to people.The pn knot of traditional N-shaped silion cell is realized by the diffusion of boron, such as: the IBC structure silicon solar cell of SunPower company of the U.S., and the panda silion cell of Chinese English profit.But the diffusion of boron in silicon needs high temperature more than 900 DEG C to carry out, and therefore often causes silicon chip to damage.And harmful B-O complex centre that high-temperature sintering process produces, minority carrier life time can be caused to decline, reduce cell conversion efficiency.For overcoming this defective workmanship, some scientific research institutions attempt utilizing the relatively large aluminium of diffusion coefficient to prepare N-shaped silion cell as the substitute of boron recently.At present, industrial aluminum diffusion all adopts the mode of silk screen printing aluminium paste, guipure sintering.But the lifting of this process characteristic to battery efficiency has very large restriction, its performance is mainly:
(1), (punctuate) aluminium paste complicated, impure more.Aluminium paste composition is except also comprising frit, organic carrier etc. containing except aluminium powder.Many impurity, through sintering process, is unfavorable for that forming desirable pn ties space charge region.
(2), the measure of the use later stage lifting battery efficiency of aluminium paste is difficult to carry out.For reducing the Carrier recombination of battery surface, usually need to take passivation emitter, and the contact area reducing metal and silicon prepares electrodes selective.After silk screen printing aluminium paste also sintering, aluminium paste adhesion layer and sial congruent melting layer can be remained at cell backside.If carry out the processes such as passivation just must remove aluminium paste layer and congruent melting layer, this process need expends the chemical reagent of flood tide, is therefore difficult to realize in production.
(3), the uniformity of aluminium paste printing is restive.Technique due to silk screen printing is that aluminium paste is deposited in half tone one end in advance, and then by scrubbing brush is disposable, aluminium paste is pushed through the whole region of half tone, aluminium paste is often even not.Therefore the p formed after sintering
+layer easily occurs that variable thickness, pn knot is uneven, thus causes the situations such as battery drain to produce.
So by above cause influence, be in bottleneck at present with the research and development of the standby N-shaped silion cell of aluminium diffusion, conversion efficiency is difficult to increase substantially always.
Summary of the invention
The object of the invention is to, the mode for above-mentioned existing employing silk screen printing aluminium paste, guipure sintering is prepared N-shaped silicon solar cell and is had that impurity is many, P
+layer thickness differs the problem causing battery efficiency low, proposes a kind of preparation method of N-shaped silicon solar cell, adopts N-shaped silicon solar cell high purity, P prepared by the method
+layer thickness is homogeneous, makes battery efficiency high, and the method step is easy, easy, is convenient to suitability for industrialized production.
For achieving the above object, the technical solution used in the present invention is: a kind of preparation method of N-shaped silicon solar cell, comprises the following steps, by method deposition of aluminum film on silicon chip of thermal evaporation, and heat silicon chip realize aluminium diffuse to form pn knot, prepare N-shaped silicon solar cell.
Further, the preparation method of front knot N-shaped silicon solar cell comprises the following steps:
(1), damage is gone on cleaning n-type silicon chip, surface;
(2), in the making herbs into wool of n-type silicon chip front surface etching;
(3), at back surface carry out phosphorus diffusion, form n
+district, and clean dephosphorization silex glass;
(4), by the n-type silicon chip front surface deposition of aluminum of method after making herbs into wool of thermal evaporation, heating silicon chip realizes aluminium diffusion, forms pn knot, and with acid treatment attachment removal thing;
(5), utilize PECVD or ALD to have the passivation layer of antireflection characteristic in front surface deposition, wherein PECVD is: Plasma Enhanced Chemical Vapor Deposition, plasma enhanced chemical vapor deposition method; ALD is: Atomic Layer Deposition, atomic layer deposition system;
(6) if carry out back surface passivation, then utilize PECVD or ALD at back surface passivation layer; If do not carry out passivation, this step can be omitted;
(7), before n-type silicon chip, back surface prints electrode respectively, and sinters, and prepares N-shaped silicon solar cell.
Further, the preparation method of back of the body knot N-shaped silicon solar cell comprises the following steps:
(1), damage is gone on cleaning n-type silicon chip, surface;
(2), in the making herbs into wool of n-type silicon chip front surface etching;
(3) front surface, after making herbs into wool carries out front court phosphorus diffusion, forms n
+district, and clean dephosphorization silex glass;
(4) technology such as PECVD or ALD, are utilized to have the passivation layer of antireflection characteristic in front surface deposition;
(5), Current surface is when being phosphorus diffusion, and by the method for thermal evaporation in n-type silicon chip back surface deposition of aluminum, heating silicon chip realizes aluminium diffusion, forms pn knot;
(6) if carry out back surface passivation, then remove the aluminium of back surface attachment, then utilize PECVD or ALD at back surface passivation layer; If do not carry out passivation, this step can be omitted;
(7) before n-type silicon chip, back surface prints electrode respectively, and sinters, and prepares back of the body knot N-shaped silicon solar cell.
Further, by the method for thermal evaporation on silicon chip during deposition of aluminum film, gross area deposition of aluminum film on silicon chip; Or adopt diffusion mask version, make selective fixed area deposition aluminium film on silicon chip.
Further, the diffuse source that described thermal evaporation adopts is fine aluminium.
Further, the temperature of described heating silicon chip is 300-800 DEG C.
Further, described making herbs into wool many employings chemical method; Described making herbs into wool structure is pyramid, tower height 2 ~ 3 microns.
Another object of the present invention also discloses a kind of N-shaped silicon solar cell, and adopt the preparation method of said n type silicon solar cell to be prepared from, this N-shaped silicon solar cell has excellent photoelectric conversion efficiency.
Another object of the present invention also discloses a kind of aluminum evaporation disperser for the preparation of N-shaped silicon solar cell, adopts this device can once deposition of aluminum film on one or more silicon chip, realizes the suitability for industrialized production of N-shaped silicon solar cell.
For achieving the above object, the technical solution used in the present invention is: a kind of aluminum evaporation disperser for the preparation of N-shaped silicon solar cell, comprise: body of heater, be respectively arranged with lower heating furnace silk, aluminum evaporation source mounting table, slide holder and upper heating furnace silk in described body of heater from bottom to top, relatively on the sidewall of the furnace body between described slide holder with aluminum evaporation source mounting table be provided with air inlet and gas outlet.
Further, described slide holder is divided into multiple carrier, for carrying multiple n-type silicon chip.
Further, on described slide holder, diffusion mask version is provided with below n-type silicon chip.
The operation principle of the described aluminum evaporation disperser for the preparation of N-shaped silicon solar cell: first diffusion mask version is placed in slide holder carrier groove, to treat that diffusion silicon chip is placed on diffusion mask version, treat that diffusingsurface (namely treating that diffusingsurface is towards diffusion mask version) downwards; Extract the air in body of heater out, be filled with protective gas (as one or more in nitrogen, hydrogen, argon gas); Heating aluminium diffuse source carries out aluminium diffusion.
Inventive n-type silicon solar cell is simple and reasonable for structure, its preparation method science, easy, has the following advantages compared with prior art:
(1) the present invention utilizes the method for thermal evaporation, for boron diffusion, can carry out aluminium diffusion under lower temperature (<600 DEG C).Or when comparatively high diffusivity temperature (>600 DEG C), for boron diffusion, realize short time diffusion.Avoid the damage that the long-time diffusion couple silicon chip of boron high temperature in conventional n-type battery process causes.In addition thermal evaporation of the present invention adopts rafifinal as diffuse source, and abandoning in aluminium paste and silk-screen printing technique take aluminium paste as diffuse source, therefore greatly avoid or reduces the trapping centre that in diffusion process aluminium paste, impurity is formed after being mixed into silicon chip.
(2) the pn knot that this method diffuses to form only has a small amount of very thin aluminium attachment silicon face, and thin and thick is homogeneous, improves p
+district's uniformity, effectively improves the photoelectric conversion efficiency of solar cell; The aluminium lamination that the present invention is prepared by thermal evaporation method is very thin only needs simple acid treatment, can carry out emitter passivation, is convenient to the transformation efficiency promoting N-shaped silicon solar cell.
(3) the aluminum evaporation disperser for the preparation of N-shaped silicon solar cell disclosed by the invention is designed with diffusion broad-mouthed receptacle for holding liquid and silicon chip arrays carrier, adopt this device can once deposition of aluminum film on one or more silicon chip, realize the suitability for industrialized production of N-shaped silicon solar cell.
To sum up, inventive n-type silicon solar cell preparation method is clean convenient, and device economy is simple and easy, is suitable for being combined with existing silicon solar cell industrial production line, and the design of many diffusion broad-mouthed receptacles for holding liquid can realize batch diffusion.In addition, this aluminothermy evaporation tank can be assisted and be used diffusion mask version, the diffusion of selectivity localization is carried out to silicon chip, may be used for interdigital structure (IBC) battery producing back of the body knot back contacts, also may be used for the production of the multiple battery such as passivated emitter and back surface battery (PERC).
Accompanying drawing explanation
Fig. 1 is embodiment 1, preparation method's flow chart of connection solar cell before N-shaped silicon;
Fig. 2 is embodiment 2, preparation method's flow chart of N-shaped silicon back of the body connection solar cell;
Fig. 3 is the structural representation of connection solar cell before the N-shaped silicon for preparing of embodiment 1;
Fig. 4 is the structural representation of the N-shaped silicon back of the body connection solar cell that embodiment 2 prepares;
Fig. 5 is the structural representation of the N-shaped silicon back of the body connection solar cell that embodiment 3 prepares;
Fig. 6 is the structural representation of the present invention for the preparation of the aluminum evaporation disperser of N-shaped silicon solar cell;
Fig. 7 is the array carrier configuration schematic diagram of silicon chip and mask;
Fig. 8 is the structural representation of diffusion mask version one;
Fig. 9 is the structural representation of diffusion mask version two.
Wherein 1-anti-reflection, passivation layer; Electrode before 2-; 3-phosphorus diffusion field; 4-back electrode; 5-aluminium diffusion p
+layer; 6-back surface passivation layer; 7-phosphorus heavily doped region; The upper heating furnace silk of 101-; 102-sealed gas chamber; 103-slide holder; 104-evaporates broad-mouthed receptacle for holding liquid; 105-gas outlet; 106-aluminum evaporation source mounting table; Heating furnace silk under 107-; 108-air inlet; 109-n type is waited to expand alsifilm; 110-silicon chip arrays carrier; 111-diffusion mask version; 112-mask array carrier.
Embodiment
The preparation method of a kind of N-shaped silicon solar cell of the present invention, comprise cleaning n-type silicon chip, surface and go damage, the making herbs into wool of n-type silicon chip front surface etching, phosphorus diffusion, aluminum evaporation and diffusion, chemical corrosion and clean, the step such as utilize PECVD or ALD deposit passivation layer, print electrode.
Below in conjunction with specific embodiment, the present invention is further described:
Embodiment 1
Fig. 1 is preparation method's flow chart of connection solar cell before embodiment 1n type silicon; Fig. 6 is the structural representation of the present invention for the preparation of the aluminum evaporation disperser of N-shaped silicon solar cell; Fig. 3 is the structural representation of connection solar cell before the N-shaped silicon for preparing of embodiment 1; Fig. 7 is the array carrier configuration schematic diagram of silicon chip and mask.
The present embodiment relates to the preparation method of connection solar cell before a kind of N-shaped silicon, and the method by method deposition of aluminum film on silicon chip of thermal evaporation, and heats silicon chip and realizes aluminium and diffuse to form pn knot, obtains connection solar cell before N-shaped silicon.
For by thermal evaporation deposition of aluminum film on silicon chip, the present embodiment employs the aluminum evaporation disperser preparing N-shaped silicon solar cell, as shown in Figure 6, this device comprises: body of heater, is respectively arranged with lower heating furnace silk 107, aluminum evaporation source mounting table 106, slide holder 103 and upper heating furnace silk 101 in described body of heater from bottom to top.Described aluminum evaporation source mounting table 106 is controllable temperature structure, and temperature when can realize aluminum evaporation controls.Body of heater between described slide holder 103 and aluminum evaporation source mounting table 106, for evaporate broad-mouthed receptacle for holding liquid 104, is provided with air inlet 108 and gas outlet 105 relatively on the sidewall of the furnace body between described slide holder 103 with aluminum evaporation source mounting table 106.Body of heater between described slide holder 103 and upper heating furnace silk 101 is sealed gas chamber 102.
As shown in Figure 7, described slide holder 103 is divided into multiple carrier, for carrying multiple n-type silicon chip 9.On described slide holder 103, below n-type silicon chip 109, be provided with diffusion mask version 111.
Particularly, before described N-shaped silicon, the preparation method of connection solar cell comprises the following steps:
(1) damage is gone on cleaning n-type silicon chip, surface;
1.1 add acetone, ethanolic solution ultrasonic cleaning degreasing successively in the container taking up silicon chip, take out silicon chip;
1.2 cleaning fluids adding I solution in the container taking up silicon chip boil and decompose completely to hydrogen peroxide, remove metallic pollution and organic contamination; I solution mixes (dense H by the concentrated sulfuric acid and hydrogen peroxide
2sO
4: H
2o
2=5:1, V:V).
1.3 add No. II in the container taking up silicon chip, III solution respectively boils 10 minutes, the photoresist removed on silicon chip surface is lived the organic impurities such as cured, rosin, and active metal (aluminium, zinc), metal oxide (calcium oxide, iron oxide), hydroxide, sulfide, carbonate etc.II solution formula is the acid wash liquid mixed by 1:1:8 volume ratio by hydrochloric acid, hydrogen peroxide, deionized water; III solution is the alkaline rinse mixed by 1:1:5 volume ratio by ammoniacal liquor, hydrogen peroxide and deionized water.
Going the corrosive liquid damaged to be the volume ratio of acid red fuming nitric acid (RFNA) and hydrofluoric acid for surface is the solution that 5:1 mixes, or for mass percentage concentration be the aqueous slkali such as NaOH, potassium hydroxide of 20%, solution temperature is 85 DEG C.
Polishing process of the present invention, the polishing solution of employing includes but not limited to sodium hydroxide solution or potassium hydroxide solution, and described sodium hydroxide solution mass concentration is greater than 1.8%.
(2) adopt chemical method in the making herbs into wool of n-type silicon chip front surface etching; The making herbs into wool solution adopted includes but not limited to dilute solution of sodium hydroxide (mass concentration is 1%), and corrosion temperature is about 80 DEG C, and making herbs into wool structure is pyramid, tower height 2 ~ 3 microns.
(3) operation principle adopting above-mentioned aluminum evaporation disperser to prepare N-shaped silicon solar cell is as follows: first diffusion mask version be placed in slide holder carrier groove, to treat that diffusion silicon chip is placed on diffusion mask version, treat that diffusingsurface (namely treating that diffusingsurface is towards diffusion mask version) downwards; Extract the air in body of heater out, be filled with nitrogen; Heating aluminium diffuse source carries out aluminium diffusion, by the method for thermal evaporation, take fine aluminium as the n-type silicon chip front surface deposition of aluminum of diffuse source after making herbs into wool.
Heating silicon chip 300 ~ 800 DEG C realizes aluminium diffusion, forms pn knot, and with acid treatment attachment removal thing; By the method for thermal evaporation on silicon chip during deposition of aluminum film, gross area deposition of aluminum film on silicon chip; Or adopt diffusion mask version, make selective fixed area deposition aluminium film on silicon chip.Namely the present embodiment adopts diffusion mask version selective fixed area deposition aluminium film on silicon chip.
For boron diffusion, this technique achieves low temperature (<600 DEG C) diffusion.Or when comparatively high diffusivity temperature (>600 DEG C), relative to boron diffusion, the short time can complete diffusion.Following aluminium technique runs into Similar Problems, no longer repeats in describing.
(4) PECVD or ALD is utilized to deposit anti-reflection, passivation layer at front surface;
(5) carry out front court phosphorus diffusion at n-type silicon chip back surface, form n
+district, and clean dephosphorization silex glass;
(6) utilize PECVD or ALD at back surface passivation layer;
(7) before n-type silicon chip, back surface prints electrode respectively, and sinters at 800 DEG C, prepares connection solar cell before N-shaped silicon.
The structure of the N-shaped silicon back of the body connection solar cell prepared as shown in Figure 3, comprises 1-anti-reflection, passivation layer; Electrode before 2-; 3-phosphorus diffusion field; 4-back electrode; 5-aluminium diffusion p
+layer and 6-back surface passivation layer.
The present embodiment utilizes the method for thermal evaporation can carry out aluminium diffusion at a lower temperature, avoids the damage that in conventional n-type battery process, high temperature boron diffusion couple silicon chip causes; In addition thermal evaporation adopts rafifinal as diffuse source, and abandoning in aluminium paste and silk-screen printing technique take aluminium paste as diffuse source, greatly avoid or reduces the trapping centre that in diffusion process aluminium paste, impurity is formed after being mixed into silicon chip; The pn knot that this method diffuses to form only has a small amount of very thin aluminium attachment silicon face, and thin and thick is homogeneous; The present embodiment prepares very thin aluminium lamination by thermal evaporation method only needs simple acid treatment, can carry out emitter passivation, is convenient to the transformation efficiency promoting N-shaped silicon solar cell.
Embodiment 2
Fig. 2 is preparation method's flow chart of embodiment 2n type silicon back of the body connection solar cell; Fig. 4 is the structural representation of the N-shaped silicon back of the body connection solar cell that embodiment 2 prepares; Fig. 8 is the structural representation of diffusion mask version one;
The present embodiment adopts the aluminum evaporation disperser for the preparation of N-shaped silicon solar cell identical with embodiment 1.
The preparation method of the present embodiment N-shaped silicon back of the body connection solar cell as shown in Figure 2, comprises the following steps:
(1) cleaning and the step of polishing n-type silicon chip is identical with embodiment 1;
(2) utilize chemical method in the front surface etching making herbs into wool of silicon.Making herbs into wool structure is pyramid, tower height 2-3 micron;
(3) front court phosphorus diffusion is carried out on the surface after making herbs into wool, forms n
+district, and clean dephosphorization silex glass;
(4) utilize PECVD or ALD at front surface deposition SiNx anti-reflection, passivation layer; Use diffusion mask version shown in Fig. 8, by aluminothermy evaporation tank in back surface aluminum diffusing, form pn knot;
(5) aluminum evaporation disperser is adopted, take fine aluminium as diffuse source, by thermal evaporation in n-type silicon chip back surface deposition of aluminum, heating silicon chip to 300 ~ 800 DEG C realize aluminium diffusion, forming pn knot, is that the HCl boiling solution cleaning of 37% is by the aluminium lamination of surface attachment with concentration;
(6) utilize PECVD or ALD in back surface depositing Al
2o
3/ SiNx passivation layer;
(7) front, back surface prints silver, silver-colored aluminium electrode respectively, and sinters at 800 DEG C.
The structure of the N-shaped silicon back of the body connection solar cell prepared as shown in Figure 4, comprises 1-anti-reflection, passivation layer; Electrode before 2-; 3-phosphorus diffusion front court; 4-back electrode; 5-aluminium diffusion p
+layer and 6-back surface passivation layer.
Embodiment 3
Fig. 5 is the structural representation of the N-shaped silicon back of the body connection solar cell that embodiment 3 prepares; Fig. 9 is the structural representation of diffusion mask version two.
The present embodiment adopts the aluminum evaporation disperser for the preparation of N-shaped silicon solar cell identical with embodiment 1.
The preparation method of the interdigital N-shaped single crystal silicon solar cell of the present embodiment N-shaped back of the body knot back contacts is as follows:
(1) cleaning and the method for polishing n-type silicon chip is identical with embodiment 1;
(2) utilize chemical method in the front surface etching making herbs into wool of silicon, making herbs into wool structure is pyramid, tower height 2-3 micron;
(3) front surface after making herbs into wool carries out front court phosphorus diffusion, forms n
+district;
(4) utilize PECVD or ALD at front surface deposition SiNx anti-reflection, passivation layer;
(5) utilize mask, expand phosphorus by printing phosphorus slurry at back surface, form n
+district, and clean dephosphorization silex glass; Use diffusion mask version shown in Fig. 9, by aluminothermy evaporation tank in back surface aluminum diffusing, form p
+district, and with the cleaning of HCl boiling solution by the aluminium lamination of surface attachment;
(6) PECVD or ALD back surface depositing Al is utilized
2o
3/ SiNx passivation layer;
(7) front, back surface prints silver, aluminium electrode respectively, and sinters at 800 DEG C.
The interdigital N-shaped single crystal silicon solar cell of the N-shaped back of the body knot back contacts prepared as shown in Figure 5, comprises 1-anti-reflection, passivation layer; 3-phosphorus diffusion front court; 4-back electrode; 5-aluminium diffusion p
+layer; 6-back surface passivation layer and 7-phosphorus heavily doped region.
It should be noted that, the process such as N-shaped silicon solar cell preparation process comprises making herbs into wool in the present invention, prepared by diffusion, electrode, be appreciated that other techniques that can also comprise N-shaped silicon solar cell and prepare, as thinning in single-sided polishing, pn knot, burn into annealing process etc. again in specific gas atmosphere.
Last it is noted that above each embodiment is only in order to illustrate technical scheme of the present invention, be not intended to limit; Although with reference to foregoing embodiments to invention has been detailed description, those of ordinary skill in the art is to be understood that: it still can be modified to the technical scheme described in foregoing embodiments, or carries out equivalent replacement to wherein some or all of technical characteristic; And these amendments or replacement, do not make the essence of appropriate technical solution depart from the scope of various embodiments of the present invention technical scheme.
Claims (10)
1. a preparation method for N-shaped silicon solar cell, is characterized in that, comprises the following steps, by method deposition of aluminum film on silicon chip of thermal evaporation, and heat silicon chip realize aluminium diffuse to form pn knot, prepare N-shaped silicon solar cell.
2. the preparation method of N-shaped silicon solar cell according to claim 1, it is characterized in that, the preparation method of front knot N-shaped silicon solar cell comprises the following steps:
(1), damage is gone on cleaning n-type silicon chip, surface;
(2), in the making herbs into wool of n-type silicon chip front surface etching;
(3), at back surface carry out phosphorus diffusion, form n
+district, and clean dephosphorization silex glass;
(4), by the n-type silicon chip front surface deposition of aluminum of method after making herbs into wool of thermal evaporation, heating silicon chip realizes aluminium diffusion, forms pn knot, and with acid treatment attachment removal thing;
(5) PECVD or ALD, is utilized to have the passivation layer of antireflection characteristic in front surface deposition;
(6) if carry out back surface passivation, then utilize PECVD or ALD at back surface passivation layer; If do not carry out passivation, this step can be omitted;
(7), before n-type silicon chip, back surface prints electrode respectively, and sinters, and prepares N-shaped silicon solar cell.
3. the preparation method of N-shaped silicon solar cell according to claim 1, is characterized in that, the preparation method of back of the body knot N-shaped silicon solar cell comprises the following steps:
(1), damage is gone on cleaning n-type silicon chip, surface;
(2), in the making herbs into wool of n-type silicon chip front surface etching;
(3) front surface, after making herbs into wool carries out front court phosphorus diffusion, forms n
+district, and clean dephosphorization silex glass;
(4) technology such as PECVD or ALD, are utilized to have the passivation layer of antireflection characteristic in front surface deposition;
(5), Current surface is when being phosphorus diffusion, and by the method for thermal evaporation in n-type silicon chip back surface deposition of aluminum, heating silicon chip realizes aluminium diffusion, forms pn knot;
(6) if carry out back surface passivation, then remove the aluminium of back surface attachment, then utilize PECVD or ALD at back surface passivation layer; If do not carry out passivation, this step can be omitted;
(7), before n-type silicon chip, back surface prints electrode respectively, and sinters, and prepares back of the body knot N-shaped silicon solar cell.
4. the preparation method of N-shaped silicon solar cell according to claim 1, is characterized in that, by the method for thermal evaporation on silicon chip during deposition of aluminum film, and gross area deposition of aluminum film on silicon chip; Or adopt diffusion mask version, make selective fixed area deposition aluminium film on silicon chip.
5. a N-shaped silicon solar cell, is characterized in that, adopts the preparation method of N-shaped silicon solar cell described in claim 1-4 any one to be prepared from.
6. the aluminum evaporation disperser for the preparation of N-shaped silicon solar cell, it is characterized in that, comprise: body of heater, be respectively arranged with lower heating furnace silk, aluminum evaporation source mounting table, slide holder and upper heating furnace silk in described body of heater from bottom to top, relatively on the sidewall of the furnace body between described slide holder with aluminum evaporation source mounting table be provided with air inlet and gas outlet.
7. according to claim 6 for the preparation of the aluminum evaporation disperser of N-shaped silicon solar cell, it is characterized in that, the body of heater between described slide holder and upper heating furnace silk is hermetically-sealed construction.
8. according to claim 6 for the preparation of the aluminum evaporation disperser of N-shaped silicon solar cell, it is characterized in that, described aluminum evaporation source mounting table is the controllable temperature structure having lower heater circuit.
9. according to claim 6 for the preparation of the aluminum evaporation disperser of N-shaped silicon solar cell, it is characterized in that, described slide holder is divided into multiple carrier, for carrying multiple n-type silicon chip.
10., according to claim 6 for the preparation of the aluminum evaporation disperser of N-shaped silicon solar cell, it is characterized in that, on described slide holder, below n-type silicon chip, be provided with diffusion mask version.
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