CN107579133B - A kind of black silion cell of back-contact and preparation method thereof - Google Patents
A kind of black silion cell of back-contact and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 36
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 36
- 239000010703 silicon Substances 0.000 claims abstract description 36
- 229910021418 black silicon Inorganic materials 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims abstract description 26
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052709 silver Inorganic materials 0.000 claims abstract description 8
- 239000004332 silver Substances 0.000 claims abstract description 8
- 238000005260 corrosion Methods 0.000 claims abstract description 6
- 230000007797 corrosion Effects 0.000 claims abstract description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 26
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 17
- 230000008569 process Effects 0.000 claims description 15
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 14
- 238000009792 diffusion process Methods 0.000 claims description 14
- 238000002161 passivation Methods 0.000 claims description 14
- 239000011259 mixed solution Substances 0.000 claims description 13
- 229910052757 nitrogen Inorganic materials 0.000 claims description 13
- 229910001868 water Inorganic materials 0.000 claims description 13
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 12
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 9
- 239000011261 inert gas Substances 0.000 claims description 8
- 238000005566 electron beam evaporation Methods 0.000 claims description 7
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 7
- 238000005245 sintering Methods 0.000 claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 6
- 230000000873 masking effect Effects 0.000 claims description 6
- 239000000243 solution Substances 0.000 claims description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052796 boron Inorganic materials 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 5
- 239000008367 deionised water Substances 0.000 claims description 5
- 229910021641 deionized water Inorganic materials 0.000 claims description 5
- 239000007789 gas Substances 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 5
- 229910052698 phosphorus Inorganic materials 0.000 claims description 5
- 239000011574 phosphorus Substances 0.000 claims description 5
- 238000002310 reflectometry Methods 0.000 claims description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- 235000008216 herbs Nutrition 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 4
- 210000002268 wool Anatomy 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 239000004033 plastic Substances 0.000 claims description 3
- 229920003023 plastic Polymers 0.000 claims description 3
- 238000005406 washing Methods 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 238000001704 evaporation Methods 0.000 claims description 2
- 230000008020 evaporation Effects 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims description 2
- 239000004408 titanium dioxide Substances 0.000 claims description 2
- 241000790917 Dioxys <bee> Species 0.000 claims 1
- 229910003978 SiClx Inorganic materials 0.000 claims 1
- 238000001035 drying Methods 0.000 claims 1
- 238000010521 absorption reaction Methods 0.000 abstract description 11
- 239000013078 crystal Substances 0.000 abstract description 10
- 238000001228 spectrum Methods 0.000 abstract description 6
- 230000004044 response Effects 0.000 abstract description 4
- 230000008901 benefit Effects 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract description 3
- 238000013082 photovoltaic technology Methods 0.000 abstract description 3
- 238000010276 construction Methods 0.000 abstract description 2
- 230000003595 spectral effect Effects 0.000 abstract description 2
- 239000000126 substance Substances 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 238000005530 etching Methods 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000002023 wood Substances 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- 240000008042 Zea mays Species 0.000 description 2
- 235000005824 Zea mays ssp. parviglumis Nutrition 0.000 description 2
- 235000002017 Zea mays subsp mays Nutrition 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 235000005822 corn Nutrition 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 235000013339 cereals Nutrition 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 230000003447 ipsilateral effect Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Photovoltaic Devices (AREA)
Abstract
The invention belongs to photovoltaic technology field, the preparation method of specially a kind of black silion cell of back-contact.The present invention prepares the black silicon of high-absorbility using silver nano-grain induced chemical corrosion, and the black silicon of back surface will effectively promote silicon wafer in the absorption of 700nm to 1500nm, and light-receiving surface will use surface texturing techniques.The 300-1500nm wide spectrum photo-generate electron-hole pairs of generation can all be efficiently used by the PN junction area of IBC structure, and photoelectric current is much higher than common crystal silicon solar batteries.The broad absorption effect of black silicon and the advantage of back contacts photovoltaic interface construction is utilized in this novel IBC structure simultaneously, the spectral response of crystal silicon solar batteries is fundamentally widened, break through the narrowband crystal silicon battery efficiency theory limit 29%, it makes full use of and occupies nearly half infrared light of sunlight power spectrum, realize the breakthrough of crystal silicon battery technique bottleneck in the past 20 years.
Description
Technical field
The invention belongs to photovoltaic technology field, and in particular to black silion cell of a kind of back-contact (IBC) and preparation method thereof.
Background technique
Silicon solar cell is just long-term and will persistently occupy the leading position of photovoltaic industry in future, however silion cell at present
Research work meets with unprecedented significant challenge, this silicon photovoltaic technology for being primarily due to current mainstream still focuses on narrow light
Spectrum response, and various techniques and its synergistic effect, the potential by the corresponding narrowband photoelectric respone of silicon band gap is dug to the limit.It is narrow
The theoretical limit efficiency of charged pool is about 29%, however such as the passivation emitter back side of University of New South Wales part
Spread the work of the amorphous silicon N monocrystalline silicon heterojunction battery (HIT) (25.6%) of (PERL) battery (24.9%) and Matsushita Corporation of Japan
Skill is extremely complicated, the suitable height of cost.It is limited to process conditions and various other factors during volume production, actually obtains
Finished battery efficiency is far below these Laboratory efficiencies again.It is contemplated that if do not sought breach in the principle of crystal silicon battery
And point of penetration, perfect preparation process is pursued simply, and the future development of crystal silicon battery will inevitably fall into stagnation.
Since band gap limits, effective photoelectric respone range of silion cell is less than 1100nm, close partly to sunlight power spectrum is occupied
Infrared light absolutely not respond, if it is possible to by this part sunlight effective use get up, the efficiency of silion cell will be short
It is greatly broken through in time.IBC battery comes across 1970s, is the back junction battery that people study earliest.Back knot
The big advantage of the one of battery be exactly PN junction and electrode to be located at cell backside ipsilateral.Black silion cell is then born in the nineties in last century,
One big disadvantage is exactly the relatively close PN junction in impurity source for generating infrared high-selenium corn, cause the open-circuit voltage of black silion cell always compared with
It is low.If the black silicon of broad absorption can be accomplished the silicon substrate back side, black silicon is efficiently used by a wide range of interface of IBC battery
Visible-to-Near InfaRed photoproduction electron hole pair.It is this to design the open-circuit voltage for not interfering with battery not only, while surface recombination is opposite
It is lower, it might even be possible to which that the infrared response for realizing silion cell realizes the breakthrough of silion cell efficiency from mechanism.
Summary of the invention
It is an object of the invention to propose black silion cell of a kind of easy back-contact (IBC) and preparation method thereof.
The black silion cell of back-contact provided by the invention is that a kind of black silicon of back surface and aluminium oxide passivation cooperate with enhanced list
Crystal silicon battery；Specifically used silver nano-grain induced chemical corrosion prepares the black silicon of high-absorbility, prepares oxygen using atomic layer deposition
Change aluminium and carry on the back passivation layer, the black silicon of back surface will effectively promote silicon wafer in the absorption of 700nm to 1500nm, while have both gradient band gap
Self-passivation effect, and light-receiving surface will use surface texturing techniques.It is received in the black silicon face deposited by electron beam evaporation growth about hundred of N silicon substrate
The intrinsic silicon masking layer of rice prevents the impurity in black silicon the purpose is to separate PN junction highly doped regions and black silicon part as far as possible
Energy level influences PN junction, guarantees that the open-circuit voltage of battery and fill factor are unaffected.The part IBC then utilizes solid-state source diffusion template
It makes, this method is not only simple and feasible compared with complicated traditional IBC technique, and process is greatly reduced, and cost drops significantly
It is low, it is suitable for industrial production.
The preparation method of the black silion cell of back-contact provided by the invention, the specific steps are as follows:
(1) polishing both surfaces are chosen, resistivity is the monocrystalline silicon of 1-10 Ω cm as substrate；The monocrystalline substrate volume
It can be 10 × 10 × 0.2mm3-25×25×0.2mm3。
(2) substrate is immersed in hydrofluoric acid solution, removes the oxide layer on surface；Hydrofluoric acid solution mass concentration can be
5%-10%。
(3) substrate for taking out oxide layer, is dried up sample surfaces with nitrogen gun, carries out surface-texturing；Detailed process
It can are as follows: place it in 85 DEG C -90 DEG C of NaOH/Alcohol/H210- in O (such as 0.5g/200ml/200ml) mixed solution
20 minutes；
In the step, the surface-texturing should uniformly, and making herbs into wool silicon face should have 30% reflectivity below, for example, 20-
30%；
In the step, nitrogen gun head does not select metal material generally, and metal ion or metallic atom is prevented to be stranded in silicon
Substrate surface influences less sub- device performance.
(4) with deionized water that its surface washing is clean, carry out APM (SC-1) RCA standard cleaning；
In the step, substrate is placed in 30 DEG C -80 DEG C of 1:1:1 proportion by APM (SC-1) RCA standard cleaning
NH4OH/ H2O2 /H2It 10-20 minutes in O mixed solution, takes out, is washed with deionized water, dried up with plastics nitrogen gun stand-by.
(5) black silicon face is made by metallic silver induced corrosion at the N silicon back side that making herbs into wool finishes；
The detailed process of the step can are as follows: thermal evaporation grows the silver nano-grain of 3nm-5nm, is subsequently placed in hydrofluoric acid, double
Oxygen water, water mixed solution in corrode 2-5 minutes, obtain 300nm-900nm reflectivity 10% hereinafter, 900nm-1500nm is anti-
Rate is penetrated in 40% black silicon below.
In the step, water, hydrogen peroxide, hydrofluoric acid mixed solution in the volume ratio of three can be 10:5:1 to 7:5:1.
In the step, the thickness of silverskin can be used for modulating the infrared absorption of black silicon, and silverskin is thicker, and infrared absorption is stronger.
In the step, for the content of water for controlling reaction rate, the ratio of water is bigger in mixed solution, reacts slower.
In the step, etching time is used to modulate all band absorptivity of black silicon, and etching time is longer, it is seen that light absorption is got over
By force, etching time is longer, and infrared Absorption is weaker.Etching time was no more than 5 minutes.
(6) on black silicon face, deposited by electron beam evaporation grows the intrinsic silicon layer of 80-100nm thickness as masking layer.In N-type silicon
Front, deposited by electron beam evaporation grow the upper passivation layer of 10-20nm thickness；
In the step, masking layer is deposited and passivation layer should be 5 × 10-4It is completed in Pa or more vacuum environment, in the step, two
It is preferably 0.05-0.08 nm/s that the evaporation rate of person, which should not exceed 0.1nm/s().
In the step, upper passivation material can be silica, silicon nitride or titanium dioxide.It is preferred that silica.
(7) interdigitated solid-state diffusion source template is sticked in intrinsic silicon layer side, in 860 DEG C of -900 DEG C of inert gas shielding atmosphere
Under, carried out in tube type resistance furnace 20-30 minutes phosphorus, boron hand over heat fork local diffusion, after at once pull out cooling.It has cooled down
Bi Hou completes silver-colored gate electrode marking on Semi-automatic screen process press；
In the step, inert gas can be nitrogen, can also service performance is more preferable according to actual needs but price is more expensive
Inert gas is as diffusing protection gas, such as argon gas.
In the step, interdigitated solid-state diffusion source template must preheat 15-30 under 100 DEG C of -150 DEG C of environment before
Minute, adsorptivity impurity is removed, prevents it from diffusing in substrate, influences battery performance.
In the step, it can also be liquid source that phosphorus, boron source, which can be Solid Source,.
(8) sintering processes under inert gas shielding atmosphere are carried out to the monocrystalline silicon battery of completion.
In the step, inert gas can be nitrogen, can also service performance is more preferable according to actual needs but price is more expensive
Inert gas is as sintering protection gas, such as argon gas.
In the step, the sintering processes are sintered to 425 DEG C -480 DEG C, and the time is 3-5 minutes.
Equipment used in this method includes superclean bench, tubular diffusion furnace, tube type resistance furnace, desk-top sol evenning machine, permanent
Warm water liquid furnace, high vacuum coating unit, screen printing apparatus, electronic balance, plastics nitrogen gun etc..
The black silicon for the noble metal induced corrosion method preparation that the present invention uses has good broad absorption performance, it is seen that light portion
Point absorption 99% or more, infrared absorption caused by energy level is also 50% or more between silicon ribbon for metal catalytic object, while according to opening
The test result of your literary probe its with gradient band gap structure, the performance with good self-passivation.The IBC knot that the present invention uses
Be configured Preparation Method it is simple, avoid cumbersome lithography and etching technique, it is only necessary to a step thermal process can be completed, be suitable for at
This controls more demanding photovoltaic industry direction.There is the conversion of high-selenium corn height near infrared band visible simultaneously, is a kind of complete
The new black silion cell of wide spectrum back-contact.
This novel IBC structure prepared by the present invention, while the broad absorption effect and back contacts light of black silicon is utilized
The advantage for lying prostrate interface construction has fundamentally widened the spectral response of crystal silicon solar batteries, breaks through narrowband crystal silicon battery efficiency
Theoretical limit 29% makes full use of and occupies nearly half infrared light of sunlight power spectrum, realizes crystal silicon battery technique bottleneck in the past 20 years
It breaks through.
Detailed description of the invention
Fig. 1 is battery structure figure.
Fig. 2 is absorption spectra.It respectively corresponds silicon wafer (rectangular), down (triangle), black silicon is up (circle) for black silicon.
Fig. 3 is black silicon gradient band gap (self-passivation) energy level schematic diagram.
Specific embodiment
Following embodiment is not used in the limitation present invention to illustrate the present invention.
1, raw material and formula
Substrate: polishing both surfaces, resistivity is 10 Ω cm, and volume is 10 × 10 × 0.2mm3CZ monocrystalline silicon piece, N-shaped,
Suzhou Rui Cai Semiconductor Co., Ltd；
Upper passivation layer: silica dioxide granule, specification 1-5mm, purity 99.999%, Zhong Nuo green wood Science and Technology Ltd.；
Black silicon corrodes induced material: high-purity Argent grain, specification 1mm, purity 99.999%, Zhong Nuo green wood Science and Technology Ltd.；
Back electrode: silver paste, purity 99.999%, Zhong Nuo green wood Science and Technology Ltd.；
PN junction spreads template: 10 × 10cm interdigitated solid-state diffusion source, Chinese Academy of Sciences Microelectronics Institute
APM (SC-1) cleaning solution: NH4OH/ H2O2 /H2O(50ml/50ml/50ml) mixed solution；
Woolen-making liquid: NaOH/Alcohol/H2O (0.5g/200ml/200ml) mixed solution；
Noble metal induces black silicon etch solution: H2O/ H2O2/ HF(100ml/50ml/10ml) mixed solution.
2, processing parameter setting
Preparation condition: room temperature, hundred grades of Clean rooms；
Diffusion temperature: 860 DEG C；
Diffusion duration: 30 minutes
Sintering temperature: 480 DEG C
Sintering duration: 5 minutes.
3, process units
VD650 superclean bench, Suzhou purifying equipment Co., Ltd, Soviet Union
SK2-4-100.00 tubular diffusion furnace, Suzhou Rui Cai Semiconductor Co., Ltd
The program-controlled tube type resistance furnace of SK2-4-12, Shanghai Shi Yan electric furnace Co., Ltd
The desk-top sol evenning machine of KW4A, Microelectronic Institute, the Chinese Academy of Sciences
HH-1 thermostatted water liquid furnace, Shanghai Mei Xiang Instrument Ltd.
BMDE500 high vacuum coating unit, tech Co., Ltd, BeiJing ZhongKe
Semi-automatic screen printing equipment, hundred million Bao Lai printing equipment Co., Ltd of Shenzhen.
4, preparation process
(1) polishing both surfaces are chosen, resistivity is 10 Ω cm, and volume is the monocrystalline substrate of 10 × 10 × 0.2mm3；
(2) substrate is immersed in 10% hydrofluoric acid solution, removes the oxide layer on surface；
(3) substrate for taking out oxide layer, sample surfaces are dried up, place it in 85 DEG C of NaOH/ with nitrogen gun
20 minutes progress surface-texturings in Alcohol/H2O (0.5g/200ml/200ml) mixed solution；
(4) with deionized water that its surface washing is clean, carry out APM (SC-1) RCA standard cleaning；
(5) silverskin for growing 3nm-5nm thickness with thermal evaporation at the N-type silicon back side that preparation is completed, is subsequently placed in 10:5:1 and matches
H2O/ H2O2/HF(100ml/50ml/10ml of ratio) corroded within 2-5 minutes in mixed solution, black silicon face is made；
(6) on black silicon face, 5 × 10-4The intrinsic silicon layer of deposited by electron beam evaporation growth 100nm thickness is made under Pa vacuum environment
For masking layer.In N-type silicon front, 5 × 10-4Deposited by electron beam evaporation grows 20nm silicon dioxide layer as upper under Pa vacuum environment
Passivation layer；
(7) interdigitated solid-state diffusion source template is sticked in intrinsic silicon layer side, under 860 DEG C of nitrogen protection atmospheres, in tubular type
30 minutes phosphorus is carried out in resistance furnace, boron hands over heat fork local diffusion, pull-out cooling at once after 30 minutes.After cooling,
Silver-colored gate electrode marking is completed on Semi-automatic screen process press；
(8) 5 minutes sintering processes under 480 DEG C of nitrogen protection atmospheres are carried out to the monocrystalline silicon battery of completion.
Claims (10)
1. a kind of preparation method of the black silion cell of back-contact, which is characterized in that specific step is as follows:
(1) polishing both surfaces are chosen, resistivity is the monocrystalline silicon of 1-10 Ω cm as substrate；
(2) substrate is immersed in hydrofluoric acid solution, removes the oxide layer on surface；
(3) substrate for taking out oxide layer, is dried up sample surfaces with nitrogen gun, carries out surface-texturing；
(4) with deionized water that its surface washing is clean, carry out APM (SC-1) RCA standard cleaning；
(5) black silicon face is made by metallic silver induced corrosion at the N silicon back side that making herbs into wool finishes；
(6) on black silicon face, deposited by electron beam evaporation grows the intrinsic silicon layer of 80-100nm thickness as masking layer；It is positive in N-type silicon,
The upper passivation layer of deposited by electron beam evaporation growth 10-20nm thickness；
(7) interdigitated solid-state diffusion source template is sticked in intrinsic silicon layer side, under 860 DEG C of -900 DEG C of inert gas shielding atmosphere,
Carried out in tube type resistance furnace 20-30 minutes phosphorus, boron hand over heat fork local diffusion, after at once pull out cooling；Cooling finishes
Afterwards, silver-colored gate electrode marking is completed on Semi-automatic screen process press；
(8) sintering processes under nitrogen protection atmosphere are carried out to the monocrystalline silicon battery of completion.
2. preparation method according to claim 1, which is characterized in that progress surface-texturing described in step (3)
Detailed process are as follows: place it in 85 DEG C -95 DEG C NaOH, Alcohol and H210-20 minutes in O mixed solution；Surface-texturing
Uniformly, making herbs into wool silicon face is made to have 30% reflectivity below.
3. preparation method according to claim 1 or 2, which is characterized in that APM (SC-1) RCA described in step (4)
Standard cleaning is the 1:1:1 proportion NH that substrate is placed in 30 DEG C -80 DEG C4OH、H2O2 、H210-20 minutes in O mixed solution,
Taking-up is washed with deionized water, and the drying of plastics nitrogen gun is stand-by.
4. preparation method according to claim 3, which is characterized in that metallic silver induced corrosion described in step (5) is black
The operating process of silicon are as follows: the silver of 3nm-5nm is deposited, places it in 10:5:1 to the water of 7:5:1 concentration, hydrogen peroxide, hydrofluoric acid
2-5 minutes in mixed solution, 300nm-900nm reflectivity is obtained 10% hereinafter, 900nm-1500nm reflectivity is below 40%
Black silicon.
5. preparation method according to claim 1,2 or 4, which is characterized in that in step (6), masking layer and passivation is deposited
Layer should be 5 × 10-4It is completed in Pa or more vacuum environment, the evaporation rate of the two is no more than 0.1nm/s.
6. preparation method according to claim 5, which is characterized in that in step (6), the upper passivation material is dioxy
SiClx, silicon nitride or titanium dioxide.
7. according to claim 1, preparation method described in 2,4 or 6, which is characterized in that in step (7), interdigitated solid-state diffusion
Source template must preheat 15-30 minutes before under 100 DEG C of -150 DEG C of environment, remove adsorptivity impurity.
8. preparation method according to claim 7, which is characterized in that in step (7), phosphorus, boron source be Solid Source or liquid
State source.
9. preparation method according to claim 7, which is characterized in that in step (7), the inert gas is nitrogen or argon
Gas.
10. the black silion cell of the back-contact that the preparation method as described in claim 1 is prepared.
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| CN204130563U (en) * | 2014-08-26 | 2015-01-28 | 中国电子科技集团公司第四十八研究所 | A kind of all back-contact electrodes P type silicon/crystalline silicon heterojunction solar battery structure |
| CN204332980U (en) * | 2014-11-25 | 2015-05-13 | 泉州市博泰半导体科技有限公司 | A kind of HIT solar cell |
| CN205985009U (en) * | 2016-09-06 | 2017-02-22 | 浙江晶科能源有限公司 | IBC structure solar cell |
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| CN204130563U (en) * | 2014-08-26 | 2015-01-28 | 中国电子科技集团公司第四十八研究所 | A kind of all back-contact electrodes P type silicon/crystalline silicon heterojunction solar battery structure |
| CN204332980U (en) * | 2014-11-25 | 2015-05-13 | 泉州市博泰半导体科技有限公司 | A kind of HIT solar cell |
| CN205985009U (en) * | 2016-09-06 | 2017-02-22 | 浙江晶科能源有限公司 | IBC structure solar cell |
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