CN101794833A - Solar cell with passivated dielectric medium on back surface and preparation method thereof - Google Patents

Solar cell with passivated dielectric medium on back surface and preparation method thereof Download PDF

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CN101794833A
CN101794833A CN201010117555A CN201010117555A CN101794833A CN 101794833 A CN101794833 A CN 101794833A CN 201010117555 A CN201010117555 A CN 201010117555A CN 201010117555 A CN201010117555 A CN 201010117555A CN 101794833 A CN101794833 A CN 101794833A
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solar cell
silicon substrate
silicon
back surface
dielectric medium
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周春兰
王文静
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Institute of Electrical Engineering of CAS
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Institute of Electrical Engineering of CAS
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    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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Abstract

The invention relates to a solar cell with a passivated dielectric medium on a back surface. A back surface field P+(4) on the back surface is locally distributed, and a metal Al electrode (5) on the back surface is in local contact with silicon through the back surface field P+(4). The solar cell with the passivated dielectric medium on the back surface is prepared by performing texturing, diffusing unilaterally and plasma etching for trimming on a P-type silicon substrate, cleaning, depositing an anti-reflection layer on a front surface, performing screen printing and sintering. The solar cell with the passivated dielectric medium on the back surface is characterized in that: after the anti-reflection layer is deposited on the front surface, an Al203 passivation film is deposited on the back surface of the P-type silicon substrate, the Al203 passivation film is ablated by laser to form a metal contact pattern, and then screen printing is performed on front and back electrodes.

Description

Solar cell of a kind of passivated dielectric medium on back surface and preparation method thereof
Technical field
The present invention relates to solar cell of a kind of passivated dielectric medium on back surface, local Metal Contact and preparation method thereof.
Background technology
An important driving force of crystalline silicon photovoltaic solar cell research is exactly to reduce the cost of every peak value watt.Therefore, the thickness and alternative silicon materials and the preparation technology of research that reduce crystalline silicon reduce a main direction of studying of its cost.Now, most silicon solar cell mainly all is to adopt P type crystalline silicon material.
The structure of present conventional P type crystal-silicon solar cell is: front surface electrode and antireflection layer, n +Emitter, at the back of the body surface of silicon substrate silk-screen Al slurry, through behind the high temperature sintering, form Al doped P-type silicon, Al-Si alloy-layer, Al metal level successively at the back side of silicon substrate, this layer Al doped P-type silicon is different from the substrate silicon part and is that doping level increases, be called Al back of the body electric field, Al-Si alloy-layer and outermost one deck Al metal level become metal electrode.Be that the whole silicon substrate back side has all stamped the Al slurry during silk screen printing, what therefore form is full Al back of the body electric field and Al electrode.Al back of the body electric field requires the thicker Al slurry of silk-screen preferably, and when the silicon attenuation, thicker Al slurry will increase fragment rate owing to the stress official post silicon generation warpage between Al and the silicon after oversintering.In addition on the one hand, metal A l is layered on whole back of the body surface, with silicon (back of the body electric field P +) directly contact, the few sub-recombination velocity that causes carrying on the back the surface is very high, is unfavorable for the collection of photogenerated current.
Be directed to the problem of full Al back of the body electric field, Chinese patent CN101431113A has proposed a kind of battery structure of passivated dielectric medium on back surface, and the structure of employing is silicon dioxide or silicon nitride.SiO 2Silicon had inactivating performance preferably.Its physical mechanism is SiO 2Film stops the dangling bonds of silicon face, is not to come from SiO 2Film can be assembled positive charge, but thinner SiO 2Passive behavior can decay, and obtain stable passive behavior needs thicker SiO 2Layer, its preparation needs long pyroprocess.SiN xLocal back of the body electric field is commonly used for the passivating film of silicon face, and is applied in the solar cell field.It is by realizing the field effect passivation at the positive charge of silicon interface accumulation high concentration.These positive charges form an inversion layer on the interface on P type silicon substrate, have caused floating junction, become a factor that reduces solar cell properties.
Summary of the invention
The objective of the invention is to improve the efficient of existing crystal-silicon solar cell, propose solar cell of a kind of passivated dielectric medium on back surface, local Metal Contact and preparation method thereof.
The technical solution used in the present invention is:
Solar cell of the present invention is a kind of dielectric Al that has 2O 3The crystal-silicon solar cell of surperficial local metal electrode contact is carried on the back on the back of the body surface of thin film passivation silicon substrate, and described solar cell is from front surface, and namely the sunshine plane of incidence rises to put in order downwards and is followed successively by: antireflection layer, front electrode, n +Emitter stage, P type silicon area, the back of the body surface of solar cell is the non-sunshine plane of incidence, is followed successively by local back of the body electric field P below the P type silicon area +, metal A l electrode, passivated dielectric medium film Al 2O 3Crystal-silicon solar cell of the present invention is at the dielectric Al of the back of the body surface of the non-sunshine plane of incidence one side 2O 3Film is as passivation layer, and the metal A l electrode on battery back of the body surface is by local back of the body electric field P +Contact with silicon substrate.
Dielectric Al is adopted on the back of the body surface of solar cell of the present invention 2O 3Passivation, Laser Ablation Al 2O 3Passivating film exposes the silicon with Metal Contact.By dielectric Al 2O 3The a large amount of fixed negative charges that comprise in the passivating film are to n +Emitter surface plays preferably passivation effect.Preparation method of the present invention is by laser ablation part A l 2O 3Passivating film exposes P type silicon, and through silk-screen aluminum slurry subsequently, the P type silicon of exposure directly contacts with aluminum slurry, forms the heavily doped back of the body electric field of aluminium after high temperature sintering, and does not have the part dielectric Al of ablation 2O 3Passivating film has stopped that then aluminium spreads in P type silicon, thereby forms the local Metal Contact with P type silicon.
The present invention is at silicon substrate back of the body surface deposition dielectric Al 2O 3Passivating film adopts laser ablation dielectric Al 2O 3Passivating film forms metal contact pattern, then at the back of the body surface deposition Al of silicon substrate film, can adopt serigraphy, evaporation, sputter or other physics, chemical method, deposition a layer thickness is less than 50 microns Al layers greater than 1 micron, with serigraphy the Ag slurry is printed on the front surface of silicon substrate thereupon, be on the antireflection layer, be sintered at last solar cell.
The back of the body surface passivation layer of silicon substrate is Al in the solar cell of the present invention's preparation 2O 3Film plays the dielectric Al of better passivation effect 2O 3Passivating film is the film that comprises fixed negative charge.
The dielectric Al that utilizes of the present invention 2O 3The manufacturing process of back of the body surface passivation layer is:
1) 100g isopropyl alcohol Al (mass concentration 98%) is dissolved in the salpeter solution of dilution of boiling, and stirs always; The volume ratio of water and nitric acid is 450ml H in the salpeter solution of described dilution 2O: lml HNO 3
2) in the process that stirs, in the solution of step 1) preparation, add HNO 3, make the pH value of solution remain on 4.5;
3) with step 2) after the solution cool to room temperature that makes, just obtain transparent Al 2O 3Gel;
4) with described Al 2O 3Gel is according to gel: H 2O=1: 1 (volume ratio) mixed, and becomes spin coating liquid;
5) spin coating sol liquid: at first under 2000 rev/mins the slow-speed of revolution spin coating liquid of step 4) gained is being coated on the back of the body surface of silicon substrate, the time is kept 10s, rotates 20s then under 3500 rev/mins speed;
6) the preparation product with step 5) toasts under 100-150 ℃ of temperature, and stoving time is no more than 1 minute;
7) under 350-650 ℃ of temperature range, anneal under oxygen atmosphere, annealing time is in one hour, and oxygen flow is 1L/min.
The dielectric Al that utilizes of the present invention 2O 3The manufacturing process of back of the body surface passivation layer is: adopt business-like laser technology equipment laser ablation dielectric Al 2O 3Passivating film forms metal contact pattern, for example by the figure of array of orifices, rectilinear(-al).
Advantage of the present invention is: by dielectric medium on back surface Al 2O 3The surface passivation effect of the fixed negative charge of passivating film, and the local contact window that forms of laser ablation can significantly improve the efficient of P type crystal-silicon solar cell and reduce production costs.
Description of drawings
The invention will be further described below in conjunction with drawings and Examples.
Fig. 1 is a solar battery structure schematic diagram of the present invention;
Among the figure: 1. antireflection layer, 2. front electrode, 3.n +Emitter stage, 4.P type silicon area, 5. local back of the body electric field P +, 6. metal A l electrode, 7. passivated dielectric medium film Al 2O 3
Embodiment
As shown in drawings, solar cell of the present invention is take the solar light irradiation face as front surface, and described solar cell puts in order downwards from front surface and is followed successively by: antireflection layer 1, front electrode 2, n +Emitter stage 3, P type silicon area 4, the back of the body surface of solar cell is the non-sunshine plane of incidence, is followed successively by local back of the body electric field P below P type silicon area 4 +5, metal A l electrode 6, passivated dielectric medium film Al 2O 37.In the crystal-silicon solar cell of the present invention at the Al of the non-sunshine plane of incidence one side 2O 3Film is as the back of the body surface passivation layer of silicon, and metal A l electrode is by back of the body electric field P +Contact with the silicon local.
The processing step for preparing described solar cell of the present invention is as follows:
1, does silicon substrate: remove the silicon chip surface affected layer, making herbs into wool;
2, in the diffusion furnace of routine, adopt POCl 3Phosphorous diffusion is carried out in the liquid state diffusion source, at the front surface formation n of silicon substrate +Emitter;
3, utilize reactive ion etching, remove the n of silicon substrate periphery +
4, using plasma strengthens the cvd silicon nitride antireflection layer on the n+ emitter;
5, adopt sol-gel process to prepare described dielectric Al 2O 3Passivation layer adopts spin coating method with the back of the body surface of sol-gel deposition at the silicon substrate that needs passivation then.Detailed process is as follows:
1) 100g aluminium isopropoxide (mass concentration 98%) is dissolved in the salpeter solution of dilution of boiling, and stirs always; The volume ratio of water and nitric acid is 450ml H in the salpeter solution of described dilution 2O: 1ml HNO 3
2) in the process that stirs, in the solution of step 1) preparation, add HNO 3, make the pH value of solution remain on 4.5;
3) with step 2) after the solution cool to room temperature that makes, just obtain transparent Al 2O 3Gel;
4) with described Al 2O 3Gel is according to gel: H 2O=1: 1 (volume ratio) mixed, and becomes spin coating liquid, and this spin coating fluid viscosity is 11Pas (viscosimeter measurement);
5) spin coating liquid can multiple spin coating obtains the thickness that needs.Adopt two-stage process carrying out the spin coating sol liquid on the spin coating instrument: at first under 2000 rev/mins the slow-speed of revolution spin coating liquid of step 4) gained is being coated on the back of the body surface of silicon substrate, the time is kept 10s, rotates 20s then under 3500 rev/mins speed.The method that adopts this spin coating is in order to obtain the equally distributed gel film of thickness;
6) will deposit certain thickness Al 2O 3Gel film toasts processing at 100-150 ℃, and the time is no more than 1 minute, with step 5) moisture that makes in the film removes;
7) under 350-650 ℃ of temperature range, anneal under oxygen atmosphere, annealing time is in one hour, and oxygen flow is 1L/min.The purpose of annealing is to promote dielectric Al 2O 3The formation of film, passing into oxygen is the defective that reduces in the film, improves passive behavior and the stability thereof of film; The equipment of annealing is tube furnace or chain-conveyer furnace.
6, adopt business-like laser technology equipment laser ablation dielectric Al 2O 3Passivating film forms metal contact pattern;
7, at Al 2O 3Depositing Al film on the passivating film can adopt serigraphy, evaporation, sputter or other physics, chemical method, and the depositing Al layer prints the Ag slurry on the antireflection layer with serigraphy thereupon;
8, step 7 preparation product is sent in the sintering furnace carried out sintering according to the commercial Ag that uses and the temperature curve of Al slurry, the purpose of sintering is that the Ag slurry that makes silk-screen, the Al layer and the silicon at the back side form ohmic contact preferably.
So far make as the crystal-silicon solar cell of substrate with P type silicon and finish.
Embodiment 1
1, removes silicon chip surface affected layer, making herbs into wool;
2, in the diffusion furnace of routine, adopt POCl 3Phosphorous diffusion is carried out in the liquid state diffusion source, at front surface (being the sunlight plane of incidence) the formation n of silicon substrate +Emitter;
3, utilize reactive ion etching, remove the n of silicon substrate periphery +
4, on n+, use plasma enhanced chemical vapor deposition antireflection layer silicon nitride;
5, adopt sol-gel process to prepare described dielectric medium on back surface Al 2O 3Passivation layer adopts spin coating method with the back of the body surface of sol-gel deposition at the silicon substrate that needs passivation then.Detailed process is as follows:
1) 100g aluminium isopropoxide (mass concentration 98%) is dissolved in the salpeter solution of dilution of boiling, and stirs always; The volume ratio of water and nitric acid is 450ml H in the salpeter solution of described dilution 2O: 1ml HNO 3
2) in the process that stirs, in the solution of step 1) preparation, add HNO 3, make the pH value of solution remain on 4.5;
3) with step 2) after the solution cool to room temperature that makes, just obtain transparent Al 2O 3Gel;
4) with described Al 2O 3Gel is according to gel: H 2O=1: 1 (volume ratio) mixed, and becomes spin coating liquid, and measuring this spin coating fluid viscosity with viscosimeter is 11Pas;
5) adopt two-stage process in spin coating sol liquid on the spin coating instrument: at first under 2000 rev/mins the slow-speed of revolution spin coating liquid of step 4) gained is being coated on the back of the body surface of silicon substrate, the time is kept 10s, rotates 20s then under 3500 rev/mins speed;
6) product with step 5) toasted 1 minute down at 100 ℃, removed the moisture in the film;
7) under 350 ℃ of temperature, anneal under oxygen atmosphere, annealing time is 50 minutes, and the flow of oxygen is 1L/min.The equipment of annealing is tube furnace or chain-conveyer furnace.
6, adopt business-like laser technology equipment laser ablation dielectric Al 2O 3Passivating film forms metal contact pattern;
7, at Al 2O 3Adopt method for printing screen silk-screen Al layer on the passivating film, the Ag slurry is printed on the antireflection layer of front surface with serigraphy thereupon;
8, technology 7 preparation products are sent in the sintering furnace carried out sintering according to the commercial Ag that uses and the temperature curve of Al slurry, the purpose of sintering is the Ag slurry that makes silk-screen, and the Al layer and the silicon at the back side form ohmic contact preferably.
So far make as the crystal-silicon solar cell of substrate with P type silicon and finish.
Embodiment 2:
1, removes silicon chip surface affected layer, making herbs into wool;
2, in the diffusion furnace of routine, adopt POCl 3Phosphorous diffusion is carried out in the liquid state diffusion source, at front surface (being the sunlight plane of incidence) the formation n of silicon substrate +Emitter;
3, utilize reactive ion etching, remove the n of silicon substrate periphery +
4, at n +The silicon nitride of deposition plasma enhancing chemical gaseous phase depositing process preparation subtracts emission layer on the surface
5, adopt sol-gel process to prepare described dielectric medium on back surface Al 2O 3Passivation layer adopts spin coating method with the back of the body surface of sol-gel deposition at the silicon substrate that needs passivation then.Detailed process is as follows:
1) 100g aluminium isopropoxide (mass concentration 98%) is dissolved in the salpeter solution of dilution of boiling, and stirs always; The volume ratio of water and nitric acid is 450ml H in the salpeter solution of described dilution 2O: 1ml HNO 3
2) in the process that stirs, in the solution of step 1) preparation, add HNO 3, make the pH value of solution remain on 4.5;
3) with step 2) after the solution cool to room temperature that makes, just obtain transparent Al 2O 3Gel;
4) with described Al 2O 3Gel is according to gel: H 2O=1: 1 (volume ratio) mixed, and becomes spin coating liquid, and measuring this spin coating fluid viscosity with viscosimeter is 11Pas;
5) adopt two-stage process carrying out the spin coating sol liquid on the spin coating instrument: at first under 2000 rev/mins the slow-speed of revolution spin coating liquid of step 4) gained is being coated on the back of the body surface of silicon substrate, the time is kept 10s, rotates 20s then under 3500 rev/mins speed;
6) with step 5) product 150 ℃ of lower bakings 30 seconds, remove the moisture in the film;
7) under 550 ℃, under oxygen atmosphere, to anneal, annealing time is 45 minutes, the flow of oxygen is 1L/min.
6, adopt business-like laser technology equipment Laser Ablation Al 2O 3Passivating film forms metal contact pattern;
7, at Al 2O 3With method for printing screen silk-screen Al layer, the Ag slurry is printed on the antireflection layer of solar cell with serigraphy on the passivating film thereupon;
8, technology 7 preparation products are sent in the sintering furnace carried out sintering according to the commercial Ag that uses and the temperature curve of Al slurry, the purpose of sintering is the Ag slurry of silk-screen, and the Al layer at the back side and silicon form preferably Ohmic contact and P +Back of the body electric field.
So far, finish with of the crystal-silicon solar cell making of P type silicon as substrate.
Embodiment 3: prepare described solar cell of the present invention, step of preparation process is as follows:
1, removes silicon chip surface affected layer, making herbs into wool;
2, in the diffusion furnace of routine, adopt POCl 3Phosphorous diffusion is carried out in the liquid state diffusion source, at front surface (being the sunlight plane of incidence) the formation n of silicon substrate +Emitter;
3, utilize reactive ion etching, remove the n of silicon substrate periphery +
4, at n +The silicon nitride of deposition plasma enhancing chemical gaseous phase depositing process preparation subtracts emission layer on the surface;
5, adopt sol-gel process to prepare described back of the body surface A l 2O 3Passivation layer adopts spin coating method with the back of the body surface of sol-gel deposition at the silicon substrate that needs passivation then.Detailed process is as follows:
1) 100g aluminium isopropoxide (mass concentration 98%) is dissolved in the salpeter solution of dilution of boiling, and stirs always; The volume ratio of water and nitric acid is 450ml H in the salpeter solution of described dilution 2O: 1ml HNO 3
2) in the process that stirs, in the solution of step 1) preparation, add HNO 3, make the pH value of solution remain on 4.5;
3) with step 2) after the solution cool to room temperature that makes, just obtain transparent Al 2O 3Gel;
4) with described Al 2O 3Gel is according to gel: H 2O=1: 1 (volume ratio) mixed, and becomes spin coating liquid, measures with viscosimeter, and this spin coating fluid viscosity is 11Pas;
5) adopt two-stage process carrying out the spin coating sol liquid on the spin coating instrument: at first under 2000 rev/mins the slow-speed of revolution spin coating liquid of step 4) gained is being coated on the back of the body surface of silicon substrate, the time is kept 10s, rotates 20s then under 3500 rev/mins speed;
6) with step 5) product 120 ℃ of lower bakings 30 seconds, remove the moisture in the film;
7) under 650 ℃ of temperature, anneal under oxygen atmosphere, annealing time is 30 minutes, and the flow of oxygen is 1L/min;
6, adopt business-like laser technology equipment laser ablation dielectric Al 2O 3Passivating film forms metal contact pattern;
7, at Al 2O 3Adopt the Al layer of method for printing screen silk-screen on the passivating film, the Ag slurry is printed on the antireflection layer of solar cell with serigraphy thereupon;
8, technology 7 preparation products are sent in the sintering furnace carried out sintering according to the commercial Ag that uses and the temperature curve of Al slurry, the purpose of sintering is the Ag slurry of silk-screen, and the Al layer at the back side and silicon form preferably Ohmic contact and P +Back of the body electric field.
So far make as the crystal-silicon solar cell of substrate with P type silicon and finish.

Claims (3)

1. the solar cell of a passivated dielectric medium on back surface, it is characterized in that: described solar cell is from the solar light irradiation face, and namely front surface rises to put in order downwards and is followed successively by: antireflection layer (1), front electrode (2), n +Emitter stage (3), P type silicon area (4); The non-sunshine plane of incidence of solar cell, namely back of the body surface is followed successively by local back of the body electric field P below P type silicon area 4 +(5), metal A l electrode (6), passivated dielectric medium film Al 2O 3(7); Described back of the body electric field P +(5) for local distributes (therefore being called local back of the body electric field), the metal A l electrode (6) on described back of the body surface is by local back of the body electric field P +(5) contact with silicon.
2. the method for preparing the solar cell of the described passivated dielectric medium on back surface of claim 1, will be for the P type silicon substrate of making solar cell through making herbs into wool, the single face diffusion, the plasma etching trimming cleans, front surface deposition antireflection layer, serigraphy, sintering is characterized in that: after silicon substrate front surface deposition antireflection layer, at the back of the body surface deposition dielectric Al of silicon substrate then 2O 3Passivating film (7), again the dielectric medium on back surface Al of laser ablation silicon substrate 2O 3Passivating film (7) forms the surperficial metal A l electrode (6) of the back of the body, and electrode before and after the silk-screen is sintered into solar cell at last then.
3. according to the described preparation method of claim 2, it is characterized in that described back of the body surface deposition dielectric Al at silicon substrate 2O 3The concrete technology step of passivating film (7) is as follows:
1) 100g aluminium isopropoxide (mass concentration 98%) is dissolved in the salpeter solution of dilution of boiling, and stirs always; In the salpeter solution of described dilution, the volume ratio of water and nitric acid is 450: 1;
2) in the process that stirs, in the solution of step 1) preparation, add HNO 3, make the pH value of solution remain on 4.5;
3) with step 2) after the solution cool to room temperature that makes, just obtain transparent Al 2O 3Gel;
4) with described Al 2O 3Gel is according to gel: H 2O=1: the ratio of 1 (volume ratio) is mixed, and becomes spin coating liquid;
5) with described spin coating sol liquid: at first under 2000 rev/mins the slow-speed of revolution spin coating liquid of step 4) gained is being coated on the back of the body surface of silicon substrate, the time is kept 10s, rotates 20s then under 3500 rev/mins speed;
6) the preparation product with step 5) toasts under 100-150 ℃ of temperature, and stoving time is no more than 1 minute;
7) under 350-650 ℃ of temperature range, anneal under oxygen atmosphere, annealing time is in one hour, and oxygen flow is 1L/min.
CN201010117555A 2010-03-03 2010-03-03 Solar cell with passivated dielectric medium on back surface and preparation method thereof Pending CN101794833A (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102005500A (en) * 2010-09-09 2011-04-06 中国科学院电工研究所 Method for preparing SiO2-containing metal oxide composite film
CN102064237A (en) * 2010-11-29 2011-05-18 奥特斯维能源（太仓）有限公司 Double-layer passivating method for crystalline silicon solar battery
CN102080244A (en) * 2010-11-23 2011-06-01 中国科学院电工研究所 Preparation method of silicon-based dielectric film
CN102130213A (en) * 2010-12-31 2011-07-20 常州天合光能有限公司 Preparation method of selective emitter junction silicon solar cell with rear surface passivation
CN102136518A (en) * 2011-02-21 2011-07-27 芜湖明远新能源科技有限公司 Double-side passivated effective silicon solar cell and technical flows
CN102157570A (en) * 2011-01-11 2011-08-17 上海太阳能电池研究与发展中心 Composite passivated anti-reflection film used for crystalline silicon solar battery and preparation method thereof
CN102231393A (en) * 2011-07-07 2011-11-02 西安交通大学苏州研究院 Silicon solar cell back surface field electrode structure and preparation method
CN102254990A (en) * 2011-06-24 2011-11-23 苏州阿特斯阳光电力科技有限公司 Preparation method of passivation layer on P-type surface of solar cell
CN103618033A (en) * 2013-12-05 2014-03-05 欧贝黎新能源科技股份有限公司 Silk-screen printing production manufacturing method of passivated-back solar cell
CN103928568A (en) * 2014-04-02 2014-07-16 泰州德通电气有限公司 Heat treatment method capable of improving efficiency of P-type back passivation battery
CN109314151A (en) * 2016-04-27 2019-02-05 巴登-符腾堡Enbw能源有限公司 The method that back surface contact solar cell is prepared by crystalline silicon

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1862840A (en) * 2005-05-12 2006-11-15 通用电气公司 Surface passivated photovoltaic devices
CN101150148A (en) * 2007-11-02 2008-03-26 宁波杉杉尤利卡太阳能科技发展有限公司 Novel aluminum emitter junction N type single crystal silicon solar battery
CA2684967A1 (en) * 2007-05-07 2008-11-13 Georgia Tech Research Corporation Formation of high quality back contact with screen-printed local back surface field
CN101359702A (en) * 2008-09-19 2009-02-04 中国科学院电工研究所 Method for preparing crystal silicon solar cell local back contact
CN101447532A (en) * 2008-12-22 2009-06-03 上海晶澳太阳能光伏科技有限公司 Method for preparing crystalline silicon solar cell with passivation on double surfaces

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1862840A (en) * 2005-05-12 2006-11-15 通用电气公司 Surface passivated photovoltaic devices
CA2684967A1 (en) * 2007-05-07 2008-11-13 Georgia Tech Research Corporation Formation of high quality back contact with screen-printed local back surface field
CN101150148A (en) * 2007-11-02 2008-03-26 宁波杉杉尤利卡太阳能科技发展有限公司 Novel aluminum emitter junction N type single crystal silicon solar battery
CN101359702A (en) * 2008-09-19 2009-02-04 中国科学院电工研究所 Method for preparing crystal silicon solar cell local back contact
CN101447532A (en) * 2008-12-22 2009-06-03 上海晶澳太阳能光伏科技有限公司 Method for preparing crystalline silicon solar cell with passivation on double surfaces

Cited By (12)

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CN102005500A (en) * 2010-09-09 2011-04-06 中国科学院电工研究所 Method for preparing SiO2-containing metal oxide composite film
CN102080244A (en) * 2010-11-23 2011-06-01 中国科学院电工研究所 Preparation method of silicon-based dielectric film
CN102080244B (en) * 2010-11-23 2013-02-06 中国科学院电工研究所 Preparation method of silicon-based dielectric film
CN102064237A (en) * 2010-11-29 2011-05-18 奥特斯维能源（太仓）有限公司 Double-layer passivating method for crystalline silicon solar battery
CN102130213A (en) * 2010-12-31 2011-07-20 常州天合光能有限公司 Preparation method of selective emitter junction silicon solar cell with rear surface passivation
CN102157570A (en) * 2011-01-11 2011-08-17 上海太阳能电池研究与发展中心 Composite passivated anti-reflection film used for crystalline silicon solar battery and preparation method thereof
CN102136518A (en) * 2011-02-21 2011-07-27 芜湖明远新能源科技有限公司 Double-side passivated effective silicon solar cell and technical flows
CN102254990A (en) * 2011-06-24 2011-11-23 苏州阿特斯阳光电力科技有限公司 Preparation method of passivation layer on P-type surface of solar cell
CN102231393A (en) * 2011-07-07 2011-11-02 西安交通大学苏州研究院 Silicon solar cell back surface field electrode structure and preparation method
CN103618033A (en) * 2013-12-05 2014-03-05 欧贝黎新能源科技股份有限公司 Silk-screen printing production manufacturing method of passivated-back solar cell
CN103928568A (en) * 2014-04-02 2014-07-16 泰州德通电气有限公司 Heat treatment method capable of improving efficiency of P-type back passivation battery
CN109314151A (en) * 2016-04-27 2019-02-05 巴登-符腾堡Enbw能源有限公司 The method that back surface contact solar cell is prepared by crystalline silicon

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