CN104377291A - Led芯片及其制备方法 - Google Patents
Led芯片及其制备方法 Download PDFInfo
- Publication number
- CN104377291A CN104377291A CN201310359148.XA CN201310359148A CN104377291A CN 104377291 A CN104377291 A CN 104377291A CN 201310359148 A CN201310359148 A CN 201310359148A CN 104377291 A CN104377291 A CN 104377291A
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- Prior art keywords
- electrode
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- type layer
- led chip
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- 238000004519 manufacturing process Methods 0.000 title abstract description 5
- 239000000758 substrate Substances 0.000 claims abstract description 117
- 230000004888 barrier function Effects 0.000 claims abstract description 20
- 238000002161 passivation Methods 0.000 claims abstract description 18
- 230000008021 deposition Effects 0.000 claims description 65
- 239000011248 coating agent Substances 0.000 claims description 23
- 238000000576 coating method Methods 0.000 claims description 23
- 238000009792 diffusion process Methods 0.000 claims description 21
- 238000002360 preparation method Methods 0.000 claims description 20
- 229910052594 sapphire Inorganic materials 0.000 claims description 18
- 239000010980 sapphire Substances 0.000 claims description 18
- 230000009467 reduction Effects 0.000 claims description 8
- 230000008901 benefit Effects 0.000 abstract description 7
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 230000017525 heat dissipation Effects 0.000 abstract 1
- 238000000151 deposition Methods 0.000 description 47
- 239000000463 material Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 9
- 239000007772 electrode material Substances 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 230000005855 radiation Effects 0.000 description 6
- 238000009825 accumulation Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000000605 extraction Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000011031 large-scale manufacturing process Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (20)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310359148.XA CN104377291B (zh) | 2013-08-16 | 2013-08-16 | Led芯片及其制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310359148.XA CN104377291B (zh) | 2013-08-16 | 2013-08-16 | Led芯片及其制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104377291A true CN104377291A (zh) | 2015-02-25 |
CN104377291B CN104377291B (zh) | 2017-09-01 |
Family
ID=52556066
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310359148.XA Active CN104377291B (zh) | 2013-08-16 | 2013-08-16 | Led芯片及其制备方法 |
Country Status (1)
Country | Link |
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CN (1) | CN104377291B (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105098034A (zh) * | 2015-09-15 | 2015-11-25 | 华南师范大学 | 芯片级封装发光二极管 |
CN108574032A (zh) * | 2017-03-10 | 2018-09-25 | 英属开曼群岛商錼创科技股份有限公司 | 发光元件与显示设备 |
WO2019056630A1 (zh) * | 2017-09-25 | 2019-03-28 | 广东工业大学 | 一种紫外led光源倒装结构 |
CN112968096A (zh) * | 2020-11-25 | 2021-06-15 | 重庆康佳光电技术研究院有限公司 | 发光二极管芯片及其制作方法、显示装置 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101604716A (zh) * | 2008-06-10 | 2009-12-16 | 北京大学 | 一种深紫外发光二极管及其制备方法 |
CN102376864A (zh) * | 2010-08-10 | 2012-03-14 | 晶元光电股份有限公司 | 发光元件 |
CN102428581A (zh) * | 2009-07-09 | 2012-04-25 | 欧司朗光电半导体有限公司 | 光电子器件 |
KR20120065609A (ko) * | 2010-12-13 | 2012-06-21 | 삼성엘이디 주식회사 | 반도체 발광소자, 반도체 발광소자 제조방법 및 발광장치 |
CN102969418A (zh) * | 2012-11-30 | 2013-03-13 | 中国科学院半导体研究所 | 氮化镓基3d垂直结构发光二极管的结构 |
CN203434185U (zh) * | 2013-08-16 | 2014-02-12 | 惠州比亚迪实业有限公司 | 一种led芯片 |
-
2013
- 2013-08-16 CN CN201310359148.XA patent/CN104377291B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101604716A (zh) * | 2008-06-10 | 2009-12-16 | 北京大学 | 一种深紫外发光二极管及其制备方法 |
CN102428581A (zh) * | 2009-07-09 | 2012-04-25 | 欧司朗光电半导体有限公司 | 光电子器件 |
CN102376864A (zh) * | 2010-08-10 | 2012-03-14 | 晶元光电股份有限公司 | 发光元件 |
KR20120065609A (ko) * | 2010-12-13 | 2012-06-21 | 삼성엘이디 주식회사 | 반도체 발광소자, 반도체 발광소자 제조방법 및 발광장치 |
CN102969418A (zh) * | 2012-11-30 | 2013-03-13 | 中国科学院半导体研究所 | 氮化镓基3d垂直结构发光二极管的结构 |
CN203434185U (zh) * | 2013-08-16 | 2014-02-12 | 惠州比亚迪实业有限公司 | 一种led芯片 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105098034A (zh) * | 2015-09-15 | 2015-11-25 | 华南师范大学 | 芯片级封装发光二极管 |
CN105098034B (zh) * | 2015-09-15 | 2018-09-18 | 华南师范大学 | 芯片级封装发光二极管 |
CN108574032A (zh) * | 2017-03-10 | 2018-09-25 | 英属开曼群岛商錼创科技股份有限公司 | 发光元件与显示设备 |
WO2019056630A1 (zh) * | 2017-09-25 | 2019-03-28 | 广东工业大学 | 一种紫外led光源倒装结构 |
CN112968096A (zh) * | 2020-11-25 | 2021-06-15 | 重庆康佳光电技术研究院有限公司 | 发光二极管芯片及其制作方法、显示装置 |
CN112968096B (zh) * | 2020-11-25 | 2022-02-25 | 重庆康佳光电技术研究院有限公司 | 发光二极管芯片及其制作方法、显示装置 |
Also Published As
Publication number | Publication date |
---|---|
CN104377291B (zh) | 2017-09-01 |
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C06 | Publication | ||
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TR01 | Transfer of patent right |
Effective date of registration: 20191230 Address after: 518119 1 Yanan Road, Kwai Chung street, Dapeng New District, Shenzhen, Guangdong Patentee after: SHENZHEN BYD MICROELECTRONICS Co.,Ltd. Address before: BYD 518118 Shenzhen Road, Guangdong province Pingshan New District No. 3009 Patentee before: BYD Co.,Ltd. |
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CP01 | Change in the name or title of a patent holder |
Address after: 518119 1 Yanan Road, Kwai Chung street, Dapeng New District, Shenzhen, Guangdong Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518119 1 Yanan Road, Kwai Chung street, Dapeng New District, Shenzhen, Guangdong Patentee before: SHENZHEN BYD MICROELECTRONICS Co.,Ltd. |
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CP01 | Change in the name or title of a patent holder | ||
TR01 | Transfer of patent right |
Effective date of registration: 20200818 Address after: 516083 Longshan 7th Road, Dayawan West District, Huizhou City, Guangdong Province (BYD Co., Ltd. complex building) Patentee after: Guangdong BYD Energy Saving Technology Co.,Ltd. Address before: 518119 1 Yanan Road, Kwai Chung street, Dapeng New District, Shenzhen, Guangdong Patentee before: BYD Semiconductor Co.,Ltd. |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20231024 Address after: No. 21 Jili Road, High tech Development Zone, Yangzhou City, Jiangsu Province, 225128 Patentee after: Yangzhou BYD Semiconductor Co.,Ltd. Address before: 516083 Longshan 7th Road, Dayawan West District, Huizhou City, Guangdong Province (complex building of BYD Co., Ltd.) Patentee before: Guangdong BYD Energy Saving Technology Co.,Ltd. |
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TR01 | Transfer of patent right |