CN104362213A - Aluminum gallium nitrogen-based solar blind ultraviolet detector and production method thereof - Google Patents
Aluminum gallium nitrogen-based solar blind ultraviolet detector and production method thereof Download PDFInfo
- Publication number
- CN104362213A CN104362213A CN201410462571.7A CN201410462571A CN104362213A CN 104362213 A CN104362213 A CN 104362213A CN 201410462571 A CN201410462571 A CN 201410462571A CN 104362213 A CN104362213 A CN 104362213A
- Authority
- CN
- China
- Prior art keywords
- layer
- type
- shaped
- undoped
- superlattice
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 title claims abstract description 21
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 title abstract 6
- 229910052757 nitrogen Inorganic materials 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 32
- 239000010980 sapphire Substances 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 229910002601 GaN Inorganic materials 0.000 claims description 46
- 239000011248 coating agent Substances 0.000 claims description 13
- 238000000576 coating method Methods 0.000 claims description 13
- 238000001704 evaporation Methods 0.000 claims description 11
- 238000002360 preparation method Methods 0.000 claims description 10
- 239000002253 acid Substances 0.000 claims description 8
- 230000008020 evaporation Effects 0.000 claims description 8
- 238000000137 annealing Methods 0.000 claims description 7
- 239000013078 crystal Substances 0.000 claims description 6
- 239000013528 metallic particle Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 5
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- 230000008859 change Effects 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 3
- 239000002923 metal particle Substances 0.000 claims description 3
- 230000000737 periodic effect Effects 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 2
- 238000000605 extraction Methods 0.000 claims 1
- 230000005684 electric field Effects 0.000 abstract description 6
- 229910002704 AlGaN Inorganic materials 0.000 description 11
- 239000000463 material Substances 0.000 description 7
- CHPZKNULDCNCBW-UHFFFAOYSA-N gallium nitrate Chemical compound [Ga+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O CHPZKNULDCNCBW-UHFFFAOYSA-N 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 238000001514 detection method Methods 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 229940044658 gallium nitrate Drugs 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 229910001020 Au alloy Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000004043 responsiveness Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- -1 InN Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000035418 detection of UV Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000001657 homoepitaxy Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 208000017520 skin disease Diseases 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
- H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Light Receiving Elements (AREA)
Abstract
The invention discloses an aluminum gallium nitrogen-based solar blind ultraviolet detector and a production method thereof. The aluminum gallium nitrogen-based solar blind ultraviolet detector comprises a sapphire substrate, an A1N nucleating layer, an A1<x1>Ga<1-x1>N buffer layer, an n-type A1<x2>Ga<1-x2>N layer, an undoped i-type A1<x3>Ga<1-x3>N absorbing layer, an n-type A1<X4>In<y1>Ga<1-x4-y1>N/A1<x5>In<y2>Ga<1-x5-y2>N superlattice separating layer, an undoped i-type A1<x6>Ga<1-x6>N multiplication layer, a p-type A1<x7>Ga<1-x7>N layer and a p-type GaN layer which are sequentially arranged from the bottom up. An n-type ohmic electrode leads from the n type A1<x2>Ga<1-x2>N layer, and a p type ohmic electrode leads from the p type GaN layer. According to the arrangement, the absorbing layer and the multiplication layer are separated by the multi-cycle n type A1<X4>In<y1>Ga<1-x4-y1>N/A1<x5>In<y2>Ga<1-x5-y2>N superlattice separating layer, the electric field of the multiplication layer is increased, thus allowing uniform avalanche multiplication to occur under the high electric field, and avalanche multiplication factors of the solar blind ultraviolet detector are increased.
Description
Technical field
The present invention relates to semiconductor photoelectronic device field, be specifically related to a kind of aluminum gallium nitride base solar blind ultraviolet detector and preparation method thereof.
Background technology
Gallium nitride-based semiconductor material mainly comprises binary compound GaN, InN, AlN of III and V group element, ternary compound InGaN, AlGaN, AlInN and quaternary compound AlInGaN, have that energy gap is large, thermal conductivity is high, high temperature resistant, the characteristic such as radioresistance, acid and alkali-resistance, high strength and high rigidity, at high brightness blue, green, purple, ultraviolet and white light emitting diode (LED), the field such as blue, violet lasers and radioresistance, high temperature resistant, HIGH-POWERED MICROWAVES device has a wide range of applications potentiality and good market prospects.Ternary compound Al
xga
1-xthe band gap of N can regulate by changing Al component x, makes the absorption optical wavelength of its correspondence between 200 ~ 365nm, just covers the solar spectrum blind area (220 ~ 290nm) produced because ozone layer absorbs ultraviolet light.Quaternary compound Al
xin
yga
1-x-yn (0≤x≤1,0≤y≤1) band gap scope be 0.7 ~ 6.2eV, carrying out continuous print adjustment by changing Al and In component, making the wave-length coverage of its absorption spectrum can from 200nm (deep ultraviolet) until 1770nm (near-infrared).
UV photodetector all has important using value and development prospect in dual-use, as the detection of UV warming and guidance, the detection of hydrocarbon combustion flame, biochemical gene, the research of ultraviolet astronomy, short-range communication and treating for skin disease etc.Gallium nitrate based ultraviolet avalanche photodetector has that volume is little, lightweight, the life-span is long, shock resistance is good, operating voltage is low, high temperature resistant, corrosion-resistant, Flouride-resistani acid phesphatase, quantum efficiency are high and without the need to advantages such as filters, become the study hotspot in photodetection field recently already.AlGaN has significant advantage preparing in ultraviolet avalanche photodetector, and as AlGaN ultraviolet avalanche photodetector can save expensive filter plate, and AlGaN has higher efficiency of light absorption than SiC.Homoepitaxy GaN ultraviolet avalanche photodetector prepared by GaN substrate, its dark current density is 10
-6a/cm
2magnitude, linear model internal gain >10
4, single photon detection efficiency ~ 24%; And the GaN ultraviolet avalanche photodetector prepared of extension on a sapphire substrate, its dark current density is 10
-4a/cm
2magnitude, linear model internal gain close to 1000, single photon detection efficiency ~ 30% [list of references K.Minder, J.L.Pau, R.McClintock, P.Kung, C.Bayram, and M.Razeghi, Appl.Phys.Lett., 91,073513 (2007) .].Utilize the technology that uptake zone is separated with multiplication region, the avalanche gain factor of GaN ultraviolet avalanche photodetector can up to 4.12 × 10
4[list of references J.L.Pau, C.Bayram, R.McClintock, M.Razeghi, and D.Silversmith, Appl.Phys.Lett., 92,101120 (2008) .].
In recent years, GaN base ultraviolet detector has been got some and has been in progress significantly, works in linear model multiplication factor higher than 10
3gaN APD and work in Geiger mode angular position digitizer multiplication factor higher than 10
7gaN base ultraviolet detector all trial-produce [list of references J.B.Limb, D.Yoo, J.H.Ryou successfully, W.Lee, S.C.Shen, R.D.Dupuis, M.L.Reed, C.J.Collins, M.Wraback, D.Hanser, E.Preble, N.M.Williams, and K.Evans, Appl.Phys.Lett., 89,011112 (2006). with document K.A.McIntosh, R.J.Molnar, L.J.Mahoney, K.M.Molvar, N.Efremow Jr., S.Verghese, Appl.Phys.Lett., 76,3938 (2000) .].AlGaN and GaN has similar material behavior, although the development of GaN base solar blind ultraviolet detector makes encouraging progress, but, the ultraviolet detector but slower development of AlGaN material, 2007, the people such as Turgut report the ultraviolet detector that the Al component grown on a sapphire substrate is the AlGaN Schottky junction structure of 0.4 again, its photomultiplier transit factor is 1560 times of [list of references T.Tut, M.Gokkavas, A.Inal, and E.Ozbay, Appl.Phys.Lett., 90,163506 (2007) .].2012, the patent [application number: CN201210314750.7] that Jiang Hao etc. disclose a kind of PIN structural ultraviolet photoelectric detector for avalanche and preparation method thereof with a kind of based on the patent [application number: CN201210333832.6] that heterostructure absorbs, dynode layer is separated GaN base avalanche photodetector, the feature that its multiplication region is separated with uptake zone makes charge carrier avalanche multiplication distance improve, thus sensitivity can be made greatly to increase.2013, Chen Dunjun etc. disclose the patent [application number: CN201310367175.1] of a kind of AlGaN ultraviolet avalanche photodetector of high-gain and preparation method thereof, equally also be that the method adopting multiplication region to be separated with uptake zone makes charge carrier avalanche multiplication distance improve, applied voltage when obviously can reduce ultraviolet avalanche photodetector avalanche breakdown and dark current, contribute to improving the ultraviolet avalanche photodetector avalanche multiplication factor.
But, the AlGaN material film quality prepared due to prior art is not high, a large amount of defects is there is in interface in AlGaN material when the metal with surface deposition forms schottky junction, make active area thinning, then the mechanism of wearing obviously, cause dark current very large, thus the raising [list of references: AlGaNSchottky Diodes for Detector Applications in the UV Wavelength Range.IEEE Trans.Electron Devices 56,2833 (2009) .] of the detection performance of this type of feature detector is seriously constrained.Therefore, the AlGaN base avalanche photodetector how obtaining high-gain is still a great problem at present.
Summary of the invention
Goal of the invention: in order to overcome the deficiencies in the prior art, the invention provides and a kind ofly adopt the separating layer of multicycle superlattice structure, the aluminum gallium nitride base solar blind ultraviolet detector that the uptake zone of solar blind ultraviolet detector can be separated with multiplication region and preparation method thereof.Due to the high absorption coefficient of multicycle superlattice structure, high horizontal carrier transport factor and strong polarity effect, effectively can increase the electric field of dynode layer, make can produce uniform avalanche multiplication under high electric field action, contribute to the avalanche multiplication factor improving solar blind ultraviolet detector; Meanwhile, adopt and there is the patterned C surface sapphire of sub-micrometer scale as backing material, greatly can improve the device quality of solar blind ultraviolet detector, thus the sensitivity of solar blind ultraviolet detector and responsiveness can be made greatly to increase.
Technical scheme: for achieving the above object, the technical solution used in the present invention is:
A kind of aluminum gallium nitride base solar blind ultraviolet detector, comprises the Sapphire Substrate, AlN nucleating layer, the Al that set gradually from the bottom to top
x1ga
1-x1n resilient coating, N-shaped Al
x2ga
1-x2n layer, undoped i type Al
x3ga
1-x3n absorbed layer, N-shaped Al
x4in
y1ga
1-x4-y1n/Al
x5in
y2ga
1-x5-y2n superlattice separating layer, undoped i type Al
x6ga
1-x6n dynode layer, p-type Al
x7ga
1-x7n layer and p-type GaN layer, at N-shaped Al
x2ga
1-x2n layer is drawn N-shaped Ohmic electrode, p-type GaN layer is drawn p-type Ohmic electrode.
Preferably, described Sapphire Substrate is the C faceted crystal of twin polishing and has the patterned C faceted crystal of sub-micrometer scale; The specification of Sapphire Substrate is: bottom width 100 ~ 1000nm, spacing 100 ~ 1000nm, the high 200 ~ 800nm of figure.
Preferably, the thickness of described AlN nucleating layer is 20 ~ 100nm, Al
x1ga
1-x1the thickness of N resilient coating is, N-shaped Al
x2ga
1-x2the thickness of N layer is 500 ~ 1000nm, undoped i type Al
x3ga
1-x3the thickness of N absorbed layer is 100 ~ 300nm, N-shaped Al
x4in
y1ga
1-x4-y1n/Al
x5in
y2ga
1-x5-y2the thickness of N superlattice separating layer is 10 ~ 200nm, undoped i type Al
x6ga
1-x6the thickness of N dynode layer is 100 ~ 250nm, p-type Al
x7ga
1-x7the thickness of N layer is 50 ~ 200nm, and the thickness of p-type GaN layer is 100 ~ 200nm.
Preferably, described undoped i type Al
x3ga
1-x3n absorbed layer and undoped i type Al
x6ga
1-x6n dynode layer is had multiply periodic N-shaped Al
x4in
y1ga
1-x4-y1n/Al
x5in
y2ga
1-x5-y2n superlattice separating layer is separated.
Preferably, described N-shaped Al
x4in
y1ga
1-x4-y1n/Al
x5in
y2ga
1-x5-y2n superlattice separating layer utilizes Si to adulterate, and wherein the doping content of Si is between 1 × 10
17to 1 × 10
20cm
-3between.
Preferably, described N-shaped Al
x4in
y1ga
1-x4-y1n/Al
x5in
y2ga
1-x5-y2in N superlattice separating layer, the Al component in each subgrade presents continuously or uniform gradient linear change from low to high, and subscript x4, x5, y1 and y2 meet following requirement: 0≤x4≤1,0≤x5≤1,0≤y1≤1,0≤y2≤1.
Preferably, described N-shaped Al
x4in
y1ga
1-x4-y1n/Al
x5in
y2ga
1-x5-y2in N superlattice separating layer, the repetition period number of superlattice is 1 ~ 20.
Preferably, described undoped i type Al
x6ga
1-x6the energy gap of N dynode layer is greater than undoped i type Al
x3ga
1-x3the energy gap of N absorbed layer, namely subscript x3 and x6 meets following requirement: 0<x3<x6<1.
A preparation method for aluminum gallium nitride base solar blind ultraviolet detector, comprises the steps:
(1) one deck SiO is deposited on a sapphire substrate
2layer or Si
3n
3layer, then at the metal level that evaporation one deck is above very thin, forms the metallic particles of a large amount of nano-grade size, utilizes these metallic particles as mask etching SiO on surface after annealing
2layer or Si
3n
3layer; The SiO being covered with sub-micrometer scale figure is obtained with after acid removing metal particle layer
2layer or Si
3n
3layer mask, utilizes this layer of mask to etch Sapphire Substrate again, is finally transferred in Sapphire Substrate by figure, finally with acid removing SiO
2layer or Si
3n
3layer mask also just obtains sub-micrometer scale graphical sapphire substrate after cleaning; The specification of graphical sapphire substrate is: bottom width 100 ~ 1000nm, spacing 100 ~ 1000nm, the high 200 ~ 800nm of figure;
(2) growing AIN nucleating layer on graphical sapphire substrate;
(3) on AlN nucleating layer, one deck Al is grown
x1ga
1-x1n resilient coating;
(4) at Al
x1ga
1-x1n resilient coating grows one deck N-shaped Al
x2ga
1-x2n layer;
(5) at N-shaped Al
x2ga
1-x2n layer grows one deck undoped i type Al
x3ga
1-x3n absorbed layer;
(6) at undoped i type Al
x3ga
1-x3n absorbed layer grows multicycle N-shaped Al
x4in
y1ga
1-x4-y1n/Al
x5in
y2ga
1-x5-y2n superlattice separating layer;
(7) at multicycle N-shaped Al
x4in
y1ga
1-x4-y1n/Al
x5in
y2ga
1-x5-y2n superlattice separating layer grows one deck undoped i type Al
x6ga
1-x6n dynode layer;
(8) at undoped i type Al
x6ga
1-x6n dynode layer grows one deck p-type Al
x7ga
1-x7n layer;
(9) at p-type Al
x7ga
1-x7n layer grows one deck p-type GaN layer;
(10) in p-type GaN layer, carry out mesa etch, expose N-shaped Al
x2ga
1-x2n layer;
(11) at N-shaped Al
x2ga
1-x2evaporating n type Ti/Al/Ti/Au Ohmic electrode on N layer table top, and annealing in process is carried out to electrode;
(12) evaporation p-type Ni/Au Ohmic electrode in p-type GaN layer, and annealing in process is carried out to electrode.
Beneficial effect: aluminum gallium nitride base solar blind ultraviolet detector that uptake zone is separated with multiplication region by employing multicycle superlattice structure provided by the invention and preparation method thereof, due to the high absorption coefficient of multicycle superlattice structure, high horizontal carrier transport factor and strong polarity effect, effectively can increase the electric field of dynode layer, therefore, it is possible to improve quantum efficiency and the responsiveness of aluminum gallium nitride base solar blind ultraviolet detector, reduce its avalanche breakdown voltage threshold value; In addition, uniform avalanche multiplication can be produced under high electric field action, contribute to the avalanche multiplication factor improving solar blind ultraviolet detector; Simultaneously, employing has the patterned C surface sapphire of sub-micrometer scale as backing material, greatly can improve the device quality of solar blind ultraviolet detector, thus the sensitivity of solar blind ultraviolet detector is increased greatly, the high performance solar blind UV electric explorer of preparation is had great importance.
Accompanying drawing explanation
Fig. 1 is solar blind UV electric explorer structural representation prepared by prior art;
Fig. 2 of the present inventionly has N-shaped Al
x4in
y1ga
1-x4-y1n/Al
x5in
y2ga
1-x5-y2the solar blind UV electric explorer structural representation of N superlattice separating layer.
Embodiment
Below in conjunction with accompanying drawing, the present invention is further described.
Be illustrated in figure 2 a kind of aluminum gallium nitride base solar blind ultraviolet detector, comprise the Sapphire Substrate 101, AlN nucleating layer 102, the Al that set gradually from the bottom to top
x1ga
1-x1n resilient coating 103, N-shaped Al
x2ga
1-x2n layer 104, undoped i type Al
x3ga
1-x3n absorbed layer 105, N-shaped Al
x4in
y1ga
1-x4-y1n/Al
x5in
y2ga
1-x5-y2n superlattice separating layer 106, undoped i type Al
x6ga
1-x6n dynode layer 107, p-type Al
x7ga
1-x7n layer 108 and p-type GaN layer 109, at N-shaped Al
x2ga
1-x2n layer 104 is drawn N-shaped Ohmic electrode (110), p-type GaN layer 109 is drawn p-type Ohmic electrode (111).
Described Sapphire Substrate 101 is the C faceted crystal of twin polishing and has the patterned C faceted crystal of sub-micrometer scale; The specification of Sapphire Substrate 101 is: bottom width 100 ~ 1000nm, spacing 100 ~ 1000nm, the high 200 ~ 800nm of figure.
The thickness of described AlN nucleating layer 102 is 20 ~ 100nm, Al
x1ga
1-x1the thickness of N resilient coating 103 is, N-shaped Al
x2ga
1-x2the thickness of N layer 104 is 500 ~ 1000nm, undoped i type Al
x3ga
1-x3the thickness of N absorbed layer 105 is 100 ~ 300nm, N-shaped Al
x4in
y1ga
1-x4-y1n/Al
x5in
y2ga
1-x5-y2the thickness of N superlattice separating layer 106 is 10 ~ 200nm, undoped i type Al
x6ga
1-x6the thickness of N dynode layer 107 is 100 ~ 250nm, p-type Al
x7ga
1-x7the thickness of N layer 108 is 50 ~ 200nm, and the thickness of p-type GaN layer 109 is 100 ~ 200nm.
Described undoped i type Al
x3ga
1-x3n absorbed layer 105 and undoped i type Al
x6ga
1-x6n dynode layer 107 is had multiply periodic N-shaped Al
x4in
y1ga
1-x4-y1n/Al
x5in
y2ga
1-x5-y2n superlattice separating layer 106 is separated.
Described N-shaped Al
x4in
y1ga
1-x4-y1n/Al
x5in
y2ga
1-x5-y2n superlattice separating layer 106 utilizes Si to adulterate, and wherein the doping content of Si is between 1 × 10
17to 1 × 10
20cm
-3between.
Described N-shaped Al
x4in
y1ga
1-x4-y1n/Al
x5in
y2ga
1-x5-y2in N superlattice separating layer 106, the Al component in each subgrade presents continuously or uniform gradient linear change from low to high, and subscript x4, x5, y1 and y2 meet following requirement: 0≤x4≤1,0≤x5≤1,0≤y1≤1,0≤y2≤1.
Described N-shaped Al
x4in
y1ga
1-x4-y1n/Al
x5in
y2ga
1-x5-y2in N superlattice separating layer 106, the repetition period number of superlattice is 1 ~ 20.
Described undoped i type Al
x6ga
1-x6the energy gap of N dynode layer 107 is greater than undoped i type Al
x3ga
1-x3the energy gap of N absorbed layer 105, namely subscript x3 and x6 meets following requirement: 0<x3<x6<1.
A preparation method for aluminum gallium nitride base solar blind ultraviolet detector, comprises the steps:
(1) in Sapphire Substrate 101, one deck SiO is deposited
2layer or Si
3n
3layer, then at the metal level that evaporation one deck is above very thin, forms the metallic particles of a large amount of nano-grade size, utilizes these metallic particles as mask etching SiO on surface after annealing
2layer or Si
3n
3layer; The SiO being covered with sub-micrometer scale figure is obtained with after acid removing metal particle layer
2layer or Si
3n
3layer mask, utilizes this layer of mask to etch Sapphire Substrate again, is finally transferred in Sapphire Substrate by figure, finally with acid removing SiO
2layer or Si
3n
3layer mask also just obtains sub-micrometer scale graphical sapphire substrate 101 after cleaning; The specification of graphical sapphire substrate 101 is: bottom width 100 ~ 1000nm, spacing 100 ~ 1000nm, the high 200 ~ 800nm of figure;
(2) growing AIN nucleating layer 102 on graphical sapphire substrate 101; The thickness of AlN nucleating layer 102 is 30nm, and concrete nucleating layer one-tenth-value thickness 1/10 can adjust according to actual needs;
(3) on AlN nucleating layer 102, one deck Al is grown
x1ga
1-x1n resilient coating 103; Al
x1ga
1-x1the thickness of N resilient coating 103 is 500nm, and x1=0.35 wherein;
(4) at Al
x1ga
1-x1n resilient coating 103 grows one deck N-shaped Al
x2ga
1-x2n layer 104; N-shaped Al
x2ga
1-x2the thickness of N layer 104 is 800nm, and x2=0.45 wherein, utilize Si to adulterate, wherein the doping content of Si is greater than 5 × 10
18cm
-3;
(5) at N-shaped Al
x2ga
1-x2n layer 104 grows one deck undoped i type Al
x3ga
1-x3n absorbed layer 105; Undoped i type Al
x3ga
1-x3the thickness of N absorbed layer 105 is 300nm, and x3=0.45 wherein;
(6) at undoped i type Al
x3ga
1-x3n absorbed layer 105 grows multicycle N-shaped Al
x4in
y1ga
1-x4-y1n/Al
x5in
y2ga
1-x5-y2n superlattice separating layer 106; N-shaped Al
x4in
y1ga
1-x4-y1n/Al
x5in
y2ga
1-x5-y2n superlattice separating layer 106 utilizes Si to adulterate, and wherein the doping content of Si is 5 × 10
17cm
-3; N-shaped Al
x4in
y1ga
1-x4-y1n/Al
x5in
y2ga
1-x5-y2the thickness of N superlattice separating layer 106 is 150nm; N-shaped Al
x4in
y1ga
1-x4-y1n/Al
x5in
y2ga
1-x5-y2in N superlattice separating layer 106, the Al component of each subgrade presents continuously or uniform gradient linear change from low to high, and subscript x4, x5, y1, y2 meet following requirement: 0≤x4≤1,0≤x5≤1,0≤y1≤1,0≤y2≤1; Wherein, the value of x4, x5, y1, y2 can adjust according to actual needs; N-shaped Al
x4in
y1ga
1-x4-y1n/Al
x5in
y2ga
1-x5-y2the repetition period number of N superlattice separating layer 106 is 20;
(7) at multicycle N-shaped Al
x4in
y1ga
1-x4-y1n/Al
x5in
y2ga
1-x5-y2n superlattice separating layer 106 grows one deck undoped i type Al
x6ga
1-x6n dynode layer 107; Undoped i type Al
x6ga
1-x6the thickness of N dynode layer 107 is 150nm, and x6=0.7 wherein;
(8) at undoped i type Al
x6ga
1-x6n dynode layer 107 grows one deck p-type Al
x7ga
1-x7n layer 108; P-type Al
x7ga
1-x7the thickness of N layer 108 is 100nm, and x7=0.7 wherein; Two luxuriant magnesium are used to make p-type Al
x7ga
1-x7the dopant of N layer 108, doping content is 8 × 10
17cm
-3;
(9) at p-type Al
x7ga
1-x7n layer 108 grows one deck p-type GaN layer 109; The thickness of p-type GaN layer 109 is 200nm, and doping content is wherein 5 × 10
18cm
-3;
(10) in p-type GaN layer 109, carry out photoetching, etch electrode table top, expose N-shaped Al
x2ga
1-x2n layer 104, processes the table top after etching;
(11) at N-shaped Al
x2ga
1-x2evaporating n type Ti/Al/Ti/Au Ohmic electrode (110) on N layer 104 table top, electrode is Ni/Au alloy electrode, and electrode size is 0.3 × 0.3mm
2, at the N of 850 DEG C after evaporation
2anneal 2 minutes under environment;
(12) evaporation p-type Ni/Au Ohmic electrode 111 in p-type GaN layer 109, electrode is Ti/Al/Ti/Au alloy electrode, at the N of 600 DEG C after evaporation
2anneal 2 minutes under environment.
It must be noted that: the present invention is not only applicable to the gallium nitrate based ultraviolet avalanche photodetector of metal-semiconductor-metal type, the gallium nitrate based ultraviolet avalanche photodetector of Schottky barrier type is suitable for too.
The above is only the preferred embodiment of the present invention; be noted that for those skilled in the art; under the premise without departing from the principles of the invention, can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (9)
1. an aluminum gallium nitride base solar blind ultraviolet detector, is characterized in that: comprise the Sapphire Substrate (101), AlN nucleating layer (102), the Al that set gradually from the bottom to top
x1ga
1-x1n resilient coating (103), N-shaped Al
x2ga
1-x2n layer (104), undoped i type Al
x3ga
1-x3n absorbed layer (105), N-shaped Al
x4in
y1ga
1-x4-y1n/Al
x5in
y2ga
1-x5-y2n superlattice separating layer (106), undoped i type Al
x6ga
1-x6n dynode layer (107), p-type Al
x7ga
1-x7n layer (108) and p-type GaN layer (109), at N-shaped Al
x2ga
1-x2n layer (104) is upper draws N-shaped Ohmic electrode (110), in p-type GaN layer (109) upper extraction p-type Ohmic electrode (111).
2. aluminum gallium nitride base solar blind ultraviolet detector according to claim 1, is characterized in that: the C faceted crystal that described Sapphire Substrate (101) is twin polishing and have the patterned C faceted crystal of sub-micrometer scale; The specification of Sapphire Substrate (101) is: bottom width 100 ~ 1000nm, spacing 100 ~ 1000nm, the high 200 ~ 800nm of figure.
3. aluminum gallium nitride base solar blind ultraviolet detector according to claim 1, is characterized in that: the thickness of described AlN nucleating layer (102) is 20 ~ 100nm, Al
x1ga
1-x1the thickness of N resilient coating (103) is, N-shaped Al
x2ga
1-x2the thickness of N layer (104) is 500 ~ 1000nm, undoped i type Al
x3ga
1-x3the thickness of N absorbed layer (105) is 100 ~ 300nm, N-shaped Al
x4in
y1ga
1-x4-y1n/Al
x5in
y2ga
1-x5-y2the thickness of N superlattice separating layer (106) is 10 ~ 200nm, undoped i type Al
x6ga
1-x6the thickness of N dynode layer (107) is 100 ~ 250nm, p-type Al
x7ga
1-x7the thickness of N layer (108) is 50 ~ 200nm, and the thickness of p-type GaN layer (109) is 100 ~ 200nm.
4. aluminum gallium nitride base solar blind ultraviolet detector according to claim 1, is characterized in that: described undoped i type Al
x3ga
1-x3n absorbed layer (105) and undoped i type Al
x6ga
1-x6n dynode layer (107) is had multiply periodic N-shaped Al
x4in
y1ga
1-x4-y1n/Al
x5in
y2ga
1-x5-y2n superlattice separating layer (106) is separated.
5. aluminum gallium nitride base solar blind ultraviolet detector according to claim 1, is characterized in that: described N-shaped Al
x4in
y1ga
1-x4-y1n/Al
x5in
y2ga
1-x5-y2n superlattice separating layer (106) utilizes Si to adulterate, and wherein the doping content of Si is between 1 × 10
17to 1 × 10
20cm
-3between.
6. aluminum gallium nitride base solar blind ultraviolet detector according to claim 1, is characterized in that: described N-shaped Al
x4in
y1ga
1-x4-y1n/Al
x5in
y2ga
1-x5-y2in N superlattice separating layer (106), the Al component in each subgrade presents continuously or uniform gradient linear change from low to high, and subscript x4, x5, y1 and y2 meet following requirement: 0≤x4≤1,0≤x5≤1,0≤y1≤1,0≤y2≤1.
7. aluminum gallium nitride base solar blind ultraviolet detector according to claim 1, is characterized in that: described N-shaped Al
x4in
y1ga
1-x4-y1n/Al
x5in
y2ga
1-x5-y2in N superlattice separating layer (106), the repetition period number of superlattice is 1 ~ 20.
8. aluminum gallium nitride base solar blind ultraviolet detector according to claim 1, is characterized in that: described undoped i type Al
x6ga
1-x6the energy gap of N dynode layer (107) is greater than undoped i type Al
x3ga
1-x3the energy gap of N absorbed layer (105), namely subscript x3 and x6 meets following requirement: 0<x3<x6<1.
9. a preparation method for aluminum gallium nitride base solar blind ultraviolet detector, is characterized in that: comprise the steps:
(1) at Sapphire Substrate (101) upper deposition one deck SiO
2layer or Si
3n
3layer, then at evaporation layer of metal layer above, forms the metallic particles of a large amount of nano-grade size, utilizes these metallic particles as mask etching SiO on surface after annealing
2layer or Si
3n
3layer; The SiO being covered with sub-micrometer scale figure is obtained with after acid removing metal particle layer
2layer or Si
3n
3layer mask, utilizes this layer of mask to etch Sapphire Substrate again, is finally transferred in Sapphire Substrate by figure, finally with acid removing SiO
2layer or Si
3n
3layer mask also just obtains sub-micrometer scale graphical sapphire substrate (101) after cleaning; The specification of graphical sapphire substrate (101) is: bottom width 100 ~ 1000nm, spacing 100 ~ 1000nm, the high 200 ~ 800nm of figure;
(2) at the upper growing AIN nucleating layer (102) of graphical sapphire substrate (101);
(3) at AlN nucleating layer (102) upper growth one deck Al
x1ga
1-x1n resilient coating (103);
(4) at Al
x1ga
1-x1n resilient coating (103) upper growth one deck N-shaped Al
x2ga
1-x2n layer (104);
(5) at N-shaped Al
x2ga
1-x2n layer (104) upper growth one deck undoped i type Al
x3ga
1-x3n absorbed layer (105);
(6) at undoped i type Al
x3ga
1-x3n absorbed layer (105) upper growth multicycle N-shaped Al
x4in
y1ga
1-x4-y1N/Al
x5in
y2ga
1-x5-y2n superlattice separating layer (106);
(7) at multicycle N-shaped Al
x4in
y1ga
1-x4-y1n/Al
x5in
y2ga
1-x5-y2n superlattice separating layer (106) upper growth one deck undoped i type Al
x6ga
1-x6n dynode layer (107);
(8) at undoped i type Al
x6ga
1-x6n dynode layer (107) upper growth one deck p-type Al
x7ga
1-x7n layer (108);
(9) at p-type Al
x7ga
1-x7n layer (108) upper growth one deck p-type GaN layer (109);
(10) in p-type GaN layer (109), carry out mesa etch, expose N-shaped Al
x2ga
1-x2n layer (104);
(11) at N-shaped Al
x2ga
1-x2evaporating n type Ti/Al/Ti/Au Ohmic electrode (110) on N layer (104) table top, and annealing in process is carried out to electrode;
(12) at the upper evaporation p-type Ni/Au Ohmic electrode (111) of p-type GaN layer (109), and annealing in process is carried out to electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410462571.7A CN104362213B (en) | 2014-09-11 | 2014-09-11 | A kind of gallium aluminium nitrilo solar blind ultraviolet detector and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410462571.7A CN104362213B (en) | 2014-09-11 | 2014-09-11 | A kind of gallium aluminium nitrilo solar blind ultraviolet detector and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104362213A true CN104362213A (en) | 2015-02-18 |
| CN104362213B CN104362213B (en) | 2016-06-15 |
Family
ID=52529457
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410462571.7A Expired - Fee Related CN104362213B (en) | 2014-09-11 | 2014-09-11 | A kind of gallium aluminium nitrilo solar blind ultraviolet detector and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104362213B (en) |
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104916713A (en) * | 2015-05-28 | 2015-09-16 | 东南大学 | Gallium-nitride-based ultraviolet detector with photonic crystals acting as incident window |
| CN106098818A (en) * | 2016-08-26 | 2016-11-09 | 扬州乾照光电有限公司 | A kind of germanio GaAs many knots flexible thin-film solar cell and preparation method thereof |
| CN106960887A (en) * | 2017-05-02 | 2017-07-18 | 常熟理工学院 | A kind of aluminum gallium nitride base solar blind ultraviolet detector and preparation method thereof |
| CN106960885A (en) * | 2017-05-02 | 2017-07-18 | 常熟理工学院 | A kind of PIN structural UV photodetector and preparation method thereof |
| CN107195724A (en) * | 2017-05-16 | 2017-09-22 | 江南大学 | A kind of method that application Graphene electrodes prepare AlGaN Schottky solar blind ultraviolet detectors on GaN self-supported substrates |
| CN107275435A (en) * | 2017-06-15 | 2017-10-20 | 西安中为光电科技有限公司 | The ultraviolet avalanche probe of high-gain |
| CN107863428A (en) * | 2017-10-26 | 2018-03-30 | 北京中科优唯科技有限公司 | A kind of nano patterned substrate and preparation method thereof |
| CN107863403A (en) * | 2017-11-28 | 2018-03-30 | 中国工程物理研究院电子工程研究所 | A kind of infrared avalanche photodide of High Linear gain and preparation method thereof |
| CN108305911A (en) * | 2018-03-16 | 2018-07-20 | 中山大学 | It absorbs, III group-III nitride semiconductor avalanche photodetector of dynode layer separated structure |
| CN109103268A (en) * | 2018-08-09 | 2018-12-28 | 镇江镓芯光电科技有限公司 | A kind of GaN base p-i-n UV detector structure and preparation method |
| CN109285914A (en) * | 2018-10-15 | 2019-01-29 | 中山大学 | A kind of ultraviolet heterojunction phototransistor detector of AlGaN base and preparation method thereof |
| CN110148648A (en) * | 2019-05-17 | 2019-08-20 | 东南大学 | A kind of ultraviolet detector with codope Al content gradually variational separating layer |
| CN110459627A (en) * | 2019-07-15 | 2019-11-15 | 东南大学 | A kind of ultraviolet-visible Two-color Photodetectors |
| CN110501773A (en) * | 2019-08-29 | 2019-11-26 | 南京大学 | AlN/AlGaN multicycle 1-D photon crystal filter and solar blind light electric explorer applied to solar blind light electric explorer |
| CN110763344A (en) * | 2019-10-30 | 2020-02-07 | 广东先导稀材股份有限公司 | GaN-based photo-thermal detection thin film element |
| CN113948604A (en) * | 2021-10-18 | 2022-01-18 | 中国科学院长春光学精密机械与物理研究所 | Three-dimensional structure high-gain AlGaN solar blind ultraviolet detector and preparation method thereof |
| CN114361303A (en) * | 2021-03-08 | 2022-04-15 | 常熟理工学院 | Epitaxial layer structure of aluminum gallium nitrogen-based ultraviolet light-emitting diode and preparation method thereof |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107240615B (en) * | 2017-05-15 | 2019-03-12 | 东南大学 | A kind of ultraviolet detector with nonpolar absorbed layer |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5834331A (en) * | 1996-10-17 | 1998-11-10 | Northwestern University | Method for making III-Nitride laser and detection device |
| JP2010021576A (en) * | 2009-10-19 | 2010-01-28 | Ricoh Co Ltd | Method of manufacturing semiconductor device |
| CN103400888A (en) * | 2013-08-22 | 2013-11-20 | 南京大学 | High-gain AlGaN ultraviolet avalanche photodetector and preparation method thereof |
| CN103400912A (en) * | 2013-08-22 | 2013-11-20 | 南京大学 | Solar-blind ultraviolet DBR (distributed bragg reflector) and preparation method thereof |
-
2014
- 2014-09-11 CN CN201410462571.7A patent/CN104362213B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5834331A (en) * | 1996-10-17 | 1998-11-10 | Northwestern University | Method for making III-Nitride laser and detection device |
| JP2010021576A (en) * | 2009-10-19 | 2010-01-28 | Ricoh Co Ltd | Method of manufacturing semiconductor device |
| CN103400888A (en) * | 2013-08-22 | 2013-11-20 | 南京大学 | High-gain AlGaN ultraviolet avalanche photodetector and preparation method thereof |
| CN103400912A (en) * | 2013-08-22 | 2013-11-20 | 南京大学 | Solar-blind ultraviolet DBR (distributed bragg reflector) and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| Y.HUANG ET AL: "Back-illuminated separate absorption and muitiplication AlGaN solar-blind avalanche photodiodes", 《APPLIED PHYSICS LETTERS》, vol. 101, 21 December 2012 (2012-12-21), XP012168447, DOI: doi:10.1063/1.4772984 * |
Cited By (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104916713A (en) * | 2015-05-28 | 2015-09-16 | 东南大学 | Gallium-nitride-based ultraviolet detector with photonic crystals acting as incident window |
| CN106098818A (en) * | 2016-08-26 | 2016-11-09 | 扬州乾照光电有限公司 | A kind of germanio GaAs many knots flexible thin-film solar cell and preparation method thereof |
| CN106960885B (en) * | 2017-05-02 | 2018-07-06 | 常熟理工学院 | A kind of PIN structural UV photodetector and preparation method thereof |
| CN106960887A (en) * | 2017-05-02 | 2017-07-18 | 常熟理工学院 | A kind of aluminum gallium nitride base solar blind ultraviolet detector and preparation method thereof |
| CN106960885A (en) * | 2017-05-02 | 2017-07-18 | 常熟理工学院 | A kind of PIN structural UV photodetector and preparation method thereof |
| CN107195724A (en) * | 2017-05-16 | 2017-09-22 | 江南大学 | A kind of method that application Graphene electrodes prepare AlGaN Schottky solar blind ultraviolet detectors on GaN self-supported substrates |
| CN107275435A (en) * | 2017-06-15 | 2017-10-20 | 西安中为光电科技有限公司 | The ultraviolet avalanche probe of high-gain |
| CN107863428A (en) * | 2017-10-26 | 2018-03-30 | 北京中科优唯科技有限公司 | A kind of nano patterned substrate and preparation method thereof |
| CN107863428B (en) * | 2017-10-26 | 2023-09-26 | 山西中科潞安紫外光电科技有限公司 | Nanoscale patterned substrate and manufacturing method thereof |
| CN107863403A (en) * | 2017-11-28 | 2018-03-30 | 中国工程物理研究院电子工程研究所 | A kind of infrared avalanche photodide of High Linear gain and preparation method thereof |
| CN107863403B (en) * | 2017-11-28 | 2023-10-20 | 中国工程物理研究院电子工程研究所 | High-linear gain infrared avalanche photodiode and preparation method thereof |
| CN108305911A (en) * | 2018-03-16 | 2018-07-20 | 中山大学 | It absorbs, III group-III nitride semiconductor avalanche photodetector of dynode layer separated structure |
| CN108305911B (en) * | 2018-03-16 | 2019-10-25 | 中山大学 | It absorbs, III group-III nitride semiconductor avalanche photodetector of dynode layer separated structure |
| CN109103268A (en) * | 2018-08-09 | 2018-12-28 | 镇江镓芯光电科技有限公司 | A kind of GaN base p-i-n UV detector structure and preparation method |
| CN109285914B (en) * | 2018-10-15 | 2020-10-16 | 中山大学 | AlGaN-based ultraviolet heterojunction phototransistor detector and preparation method thereof |
| CN109285914A (en) * | 2018-10-15 | 2019-01-29 | 中山大学 | A kind of ultraviolet heterojunction phototransistor detector of AlGaN base and preparation method thereof |
| CN110148648A (en) * | 2019-05-17 | 2019-08-20 | 东南大学 | A kind of ultraviolet detector with codope Al content gradually variational separating layer |
| CN110459627A (en) * | 2019-07-15 | 2019-11-15 | 东南大学 | A kind of ultraviolet-visible Two-color Photodetectors |
| CN110459627B (en) * | 2019-07-15 | 2021-05-14 | 东南大学 | Ultraviolet-visible dual-waveband photoelectric detector |
| CN110501773A (en) * | 2019-08-29 | 2019-11-26 | 南京大学 | AlN/AlGaN multicycle 1-D photon crystal filter and solar blind light electric explorer applied to solar blind light electric explorer |
| CN110501773B (en) * | 2019-08-29 | 2020-06-02 | 南京大学 | AlN/AlGaN multicycle one-dimensional photonic crystal filter applied to solar blind photoelectric detector and solar blind photoelectric detector |
| CN110763344A (en) * | 2019-10-30 | 2020-02-07 | 广东先导稀材股份有限公司 | GaN-based photo-thermal detection thin film element |
| CN114361303A (en) * | 2021-03-08 | 2022-04-15 | 常熟理工学院 | Epitaxial layer structure of aluminum gallium nitrogen-based ultraviolet light-emitting diode and preparation method thereof |
| CN114361303B (en) * | 2021-03-08 | 2022-07-12 | 常熟理工学院 | Epitaxial layer structure of aluminum gallium nitrogen-based ultraviolet light-emitting diode and preparation method thereof |
| CN113948604A (en) * | 2021-10-18 | 2022-01-18 | 中国科学院长春光学精密机械与物理研究所 | Three-dimensional structure high-gain AlGaN solar blind ultraviolet detector and preparation method thereof |
| CN113948604B (en) * | 2021-10-18 | 2024-05-17 | 中国科学院长春光学精密机械与物理研究所 | Three-dimensional structure high-gain AlGaN solar blind ultraviolet detector and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104362213B (en) | 2016-06-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104362213B (en) | A kind of gallium aluminium nitrilo solar blind ultraviolet detector and preparation method thereof | |
| CN106960887B (en) | A kind of aluminum gallium nitride base solar blind ultraviolet detector and preparation method thereof | |
| CN107240627B (en) | A kind of UV LED with codope multi-quantum pit structure | |
| CN104051561B (en) | A kind of nitridation gallio ultraviolet avalanche photodetector | |
| CN106960885B (en) | A kind of PIN structural UV photodetector and preparation method thereof | |
| CN104282793A (en) | Three-mesa p-Pi-n structured III-nitride semiconductor avalanche photodetector and preparation method thereof | |
| CN105590971B (en) | AlGaN solar-blind ultraviolet enhanced avalanche photo-detector and preparation method therefor | |
| CN108305911A (en) | It absorbs, III group-III nitride semiconductor avalanche photodetector of dynode layer separated structure | |
| CN114220878B (en) | Ga with carrier transport layer2O3GaN solar blind ultraviolet detector and preparation method thereof | |
| CN110364600A (en) | A kind of UV LED epitaxial structure and preparation method thereof | |
| CN108878547A (en) | A kind of deep ultraviolet MSM photoelectric detector of high external quantum efficiency | |
| CN102945902A (en) | Light-emitting diode of photonic crystal structure and application thereof | |
| CN102290478A (en) | p-i-n-type unijunction InGaN solar cell | |
| CN109326689A (en) | A kind of UVLED structure and preparation method thereof improving light extraction efficiency | |
| KR101199187B1 (en) | Light emitting diode and fabricating method thereof | |
| CN102820367A (en) | Gallium nitride (GaN) base avalanche photodetector based on heterostructure absorption and multiplication layer separation | |
| CN106410001B (en) | A kind of AlGaN bases UV LED | |
| Liu et al. | Progress on photovoltaic AlGaN photodiodes for solar-blind ultraviolet photodetection | |
| JP4806112B1 (en) | Light emitting diode | |
| CN103474503A (en) | Ultraviolet single-wavelength MSM photoelectric detector based on two-dimensional crystal lattices | |
| CN210092110U (en) | Deep ultraviolet enhanced SiC Schottky barrier type ultraviolet detector | |
| CN102738311B (en) | Preparation method of InGaN/Si double-node solar cell | |
| CN113964224B (en) | Semiconductor ultraviolet detector chip and epitaxial structure thereof | |
| CN113964218B (en) | Semiconductor ultraviolet detector chip and epitaxial structure thereof | |
| CN207021269U (en) | A kind of PIN structural UV photodetector |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160615 Termination date: 20210911 |