CN110501773B - AlN/AlGaN multicycle one-dimensional photonic crystal filter applied to solar blind photoelectric detector and solar blind photoelectric detector - Google Patents
AlN/AlGaN multicycle one-dimensional photonic crystal filter applied to solar blind photoelectric detector and solar blind photoelectric detector Download PDFInfo
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- 239000004038 photonic crystal Substances 0.000 title claims abstract description 44
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- 239000000463 material Substances 0.000 claims description 27
- 230000008033 biological extinction Effects 0.000 claims description 9
- 229910052594 sapphire Inorganic materials 0.000 claims description 7
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Abstract
The invention discloses an AlN/Al applied to a solar blind photoelectric detector0.5Ga0.5The N multicycle one-dimensional photonic crystal filter comprises a substrate and two to three periodical AlN/Al layers grown on the substrate0.5Ga0.5N/AlN Structure, each periodic AlN/Al0.5Ga0.5In the N/AlN structure, AlN/Al0.5Ga0.5The growth period of N/AlN is 33 groups. And a solar blind photodetector using the photonic crystal filter is disclosed. Compared with the traditional single-period AlN/AlGaN single-period photonic crystal filter, the multi-period superposed photonic crystal filter realizes a wide stop band with peak reflectivities of 280-320nm and 280-340nm reaching 99 percent, is 2-3 times of the highest stop band of a single period, and can improve the performances such as the photocurrent response rejection ratio of a solar blind area and a visible blind area when being integrated on a solar blind detector.
Description
Technical Field
The invention relates to an AlN/AlGaN multicycle one-dimensional photonic crystal filter applied to a solar blind photoelectric detector, belonging to the field of solar blind photoelectric detection.
Background
In recent years, the potential application value of solar blind photodetectors in civil or military fields, such as missile early warning, space communication safety, engine control of engines and the like, has led to social extensive attention and research. However, the response of the device to light beyond the solar dead zone is still a key problem which needs to be solved urgently and influences the sensitivity of the device to the detection of deep ultraviolet signals. Although some materials such as Ga have been of widespread interest in recent years2O3AlGaN, etcTheoretically, because the intrinsic solar blind characteristic of the wide-bandgap semiconductor device can realize solar blind detection without the assistance of an additional filter, but the photocurrent response of the solar blind area caused by defects and impurities in the wide-bandgap semiconductor device is inevitable, a filter with the high reflectivity of the visible blind area and the high transmissivity of the solar blind area is still the key point for further developing the solar blind photoelectric detector.
Iii-nitride photonic crystal filters are often widely used in deep ultraviolet vertical cavity surface emitting lasers, resonant cavity light emitting diodes and in particular in solar blind photodetectors. So far, the literature reports that the center wavelength is 240-280nm, the peak reflectivity reaches about 90%, and the stop band broadband does not exceed 17nm, and the single-period photonic crystal filter can be realized. However, the narrow stop band width of most iii-nitride photonic crystal filters in the reflection spectrum still cannot break through 20nm, and such narrow stop bands cannot effectively limit the response spectrum to the solar dead band. Even though some researchers tried to simulate bi-periodic Al0.98In0.02N/Al0.77Ga0.23N Bragg reflector to improve stop band width, but Al with high Al component in actual preparation process0.98In0.02N is difficult to prepare and expensive to manufacture, and is not a widely applicable solution.
Disclosure of Invention
The invention provides an AlN/AlGaN multi-period one-dimensional photonic crystal filter applied to a solar blind photodetector, which can be applied to the solar blind photodetector to improve the stop band width and the peak reflectivity of a visible blind area and optimize the photocurrent response inhibition ratio of the solar blind area and the visible blind area.
The purpose of the invention is realized by the following technical scheme:
an AlN/AlGaN multicycle one-dimensional photonic crystal filter applied to a solar blind photodetector comprises a substrate and two to three periodical AlN/Al crystals growing on the substrate0.5Ga0.5N/AlN Structure, each periodic AlN/Al0.5Ga0.5In the N/AlN structure, AlN/Al0.5Ga0.5The growth period of N/AlN is 33 groups.
Preferably, the multicycle one-dimensional photonic crystal filter has a structure that: substrate/[ A ]1/B1/A1]33/ [A2/B2/A2]33Wherein A is1The material is AlN, and the thickness is 16.88 nm; b is1Is made of Al0.5Ga0.5N, the thickness is 29.81 nm; a. the2The material is AlN, and the thickness is 18.07 nm; b is2Is made of Al0.5Ga0.5N, thickness 31.90 nm.
Preferably, the multicycle one-dimensional photonic crystal filter has a structure that: substrate/[ A ]1/B1/A1]33/ [A3/B3/A3]33/[A4/B4/A4]33Wherein A is1The material is AlN, and the thickness is 16.88 nm; b is1Is made of Al0.5Ga0.5N, the thickness is 29.81 nm; a. the3The material is AlN, and the thickness is 17.77 nm; b is3Is made of Al0.5Ga0.5N, the thickness is 31.38 nm; a. the4The material is AlN, and the thickness is 18.96 nm; b is4Is made of Al0.5Ga0.5N, thickness 33.47 nm.
Preferably, the substrate is a sapphire substrate.
Preferably, the AlN has a refractive index of 2.11 and an extinction coefficient of 0; al (Al)0.5Ga0.5The refractive index of N is 2.39 and the extinction coefficient is 0.00247.
The invention also discloses a solar blind photoelectric detector which comprises the AlN/Al0.5Ga0.5N multicycle one-dimensional photonic crystal filters.
The invention has the following beneficial effects:
(1) in the present invention, each cycle is defined by
Wherein L, H represents AlN and Al, respectively0.5Ga0.5Two materials having different N refractive indices, the photonic crystal
The structure is a minimum composition unit of the photonic crystal, and L is formed by L/2 of two adjacent groups in the actual growth process and represents the thickness of a layer of low-refractive-index material under a certain specific central wavelength;
(2) compared with the traditional single-period AlN/AlGaN single-period photonic crystal filter, the multi-period superposed photonic crystal filter greatly widens the broadband of the stop band in the visible blind area, realizes the wide stop bands with peak reflectivities of 280-plus 320nm and 280-plus 340nm reaching 99 percent, is 2-3 times of the highest stop band in a single period, and can improve the performances such as the photocurrent response inhibition ratio of the solar blind area and the visible blind area when being integrated on a solar blind detector.
Drawings
FIG. 1 AlN/Al in example 10.5Ga0.5A schematic diagram of an N bi-periodic one-dimensional photonic crystal filter;
FIG. 2 AlN/Al in example 20.5Ga0.5A schematic diagram of an N three-cycle one-dimensional photonic crystal filter;
FIG. 3 AlN/Al0.5Ga0.5N single-period one-dimensional photonic crystal filters are used for comparing reflection spectra of different groups under the same central wavelength;
FIG. 4 AlN/Al in example 10.5Ga0.5N double-period one-dimensional photonic crystal filtering reflection spectrums;
FIG. 5 AlN/Al in example 20.5Ga0.5N three-period one-dimensional photonic crystal filtering reflection spectrums;
Detailed Description
Example 1
Example 1: AlN/Al0.5Ga0.5N double-period one-dimensional photonic crystal filter
The structure of the membrane system is as follows: 1.76/[ A ]1/B1/A1]33[A2/B2/A2]33/1.0. Where n-1.76 represents a sapphire substrate, n-1.0 represents top air, a represents AlN, and B represents Al0.5Ga0.5N, subscripts 1 and 2 represent center wavelengths of 285nm and 305nm, respectively. Each thickness is
Referring to the design of the attached figure 1, sapphire is used as a substrate, and 33 groups of AlN/Al are sequentially grown upwards0.5Ga0.5The N/AlN thickness is respectively 16.88/29.87/16.88, and then 33 groups of AlN/Al are continuously grown0.5Ga0.5The N/AlN thicknesses were 18.07/31.90/18.07, respectively. The material name and the thickness of the 133-layer thin film structure are sequentially input into the simulation software TFCalc, and then the calculated reflection spectrum can be analyzed and obtained, as shown in FIG. 4. The embodiment realizes a wide stop band from 280nm to 320nm and about 40nm, the peak reflectivity reaches 99% in the band interval, and the photoresponse suppression of the solar blind photodetector on the visible blind zone 280nm to 320nm band can be realized.
Example 2: AlN/Al0.5Ga0.5N three-period one-dimensional photonic crystal filter
The structure of the membrane system is as follows: 1.76/[ A ]1/B1/A1]33[A3/B3/A3]33[A4/B4/A4]33/1.0. Where n-1.76 represents a sapphire substrate, n-1.0 represents top air, a represents AlN, and B represents Al0.5Ga0.5N, subscripts 1, 3, and 4 represent center wavelengths of 285nm,300nm, and 320nm, respectively. Each thickness is
Referring to the design of the attached figure 2, sapphire is used as a substrate, and the sapphire is sequentially grown upwards for 3 periods, wherein each period comprises 33 groups of AlN/Al0.5Ga0.5N/AlN, the thickness of each period is respectively 16.88/29.87/16.88, 17.77/31.38/17.77, 18.96/33.47/18.96. The material name and thickness of the 199-layer thin film structure are sequentially input into the simulation software TFCalc, and then the calculated reflection spectrum can be analyzed and obtained, as shown in fig. 5. The wide stop band of about 60nm from 280nm to 340nm is realized, the peak reflectivity reaches 99% in the band interval, and the photoresponse suppression of the solar blind photoelectric detector on the 280nm to 340nm band of the visible blind zone can be realized.
According to the multicycle photonic crystal filter structure, two groups and three groups of monocycle structures are respectively selected for superposition according to stop band ranges (shown in table 1) in simulation reflection spectrums of monocycle structures with different central wavelengths, wherein the structure with the shorter central wavelength grows at the bottom, and the longer structure grows upwards in sequence.
Table 1 shows AlN/Al0.5Ga0.5The N single-period one-dimensional photonic crystal filters can realize the range and the width of a stop band under different central wavelengths. The maximum width does not exceed 20nm, and the requirement of a solar blind photoelectric detector cannot be met. The value of which can be designed AlN/Al0.5Ga0.5The N multicycle one-dimensional photonic crystal filter provides a reference.
Table 1: AlN/Al0.5Ga0.5Stopband range and width data of N single-period one-dimensional photonic crystal filter under different central wavelengths
In the photonic crystal filter of the present invention, each period is defined by
Wherein L, H represents AlN and Al, respectively0.5Ga0.5Two materials having different N refractive indices, each layer thickness being determined by both the central wavelength and the refractive index of the material, i.e.
Respectively selecting central wavelengths lambda0285nm,300nm,305 nm and 320nm, and calculating the thickness of each layer of the monocycle structure under different central wavelengths by substituting the formula (1). Substituting refractive index n value and extinction coefficient k value of two materials and the thickness calculated by each layer of film by using TFCalc optical film simulation software to perform reflection spectrum simulation, thus obtaining single-period AlN/Al0.5Ga0.5Calculated reflectance spectra of N photonic crystal filters. And calculating to obtain the calculated reflection spectrum of the bi-periodic and tri-periodic photonic crystal filters with wider stop bands by continuously superposing the number of the layers of the films.
The photonic crystal
Structures, which are the smallest constituent units of photonic crystals, of two adjacent groups during actual growth
I.e., composition L, represents the thickness of a layer of low refractive index material at a particular center wavelength.
And 33 groups in each period are the optimal group number of the single period obtained by calculation and simulation verification according to a transmission matrix method. 23 groups and 43 groups are used as comparison groups, and the reflection spectrums of the three different groups of single-period photonic crystals are respectively simulated as shown in fig. 3 when the central wavelength is 285nm, and as can be seen from fig. 3, 33 groups of AlN/Al0.5Ga0.5N/AlN structures in each period are optimal, and the reduction of the groups causes the reduction of the peak reflectivity and the narrowing of the stop band; the group number is increased, the peak reflectivity and the stop band width are not increased any more, the reflection spectrum oscillation of the area outside the stop band is obvious, and the structure of the 33 groups can simultaneously have a wider stop band range and a higher peak reflectivity in the stop band.
The materials with different refractive indexes are respectively selected to be Al0.5Ga0.5N and AlN are the principle that the larger the difference value of the refractive index is, the better the refractive index is and the smaller the absorption of the material is, the better the refractive index difference value is. The refractive index and extinction coefficient of the materials of different Al compositions can be obtained by looking up literature data. The larger the Al component is, the lower the refractive index is, and in order to ensure the refractive index difference as large as possible, the refractive index of AlN is selected to be2.11, the extinction coefficient is 0, and the material is transparent; the lower the Al component is, the higher the extinction coefficient of the AlGaN in the solar blind area is in an exponential type, and because the absorption range of the material to the spectrum is determined by the intrinsic forbidden bandwidth of the material,
and Al having Al component of xxGa1-xThe forbidden bandwidth N is as follows: eg ═ xeg (aln) + (1-x) Eg (gan) -bx (1-x) (3) where the coefficient b is material dependent, Eg ═ 6.13eV and Eg ═ 3.42eV were substituted for AlGaN material b ═ 0.5, and Eg ═ 3.4+2.8x was obtained in simplified formula (3). Selecting λ about 250nm, and selecting Al according to the above analysis result, wherein x is 0.5-0.550.5Ga0.5N and AlN are most preferred. Wherein Al is0.5Ga0.5The refractive index of N is 2.39 and the extinction coefficient is 0.00247.
The above embodiments are preferred embodiments of the present invention, but the present invention is not limited to the above embodiments, and any other changes, modifications, substitutions, combinations, and simplifications which do not depart from the spirit and principle of the present invention should be construed as equivalents thereof, and all such changes, modifications, substitutions, combinations, and simplifications are intended to be included in the scope of the present invention.
Claims (6)
1. The AlN/AlGaN multicycle one-dimensional photonic crystal filter applied to the solar blind photodetector comprises a substrate and is characterized in that: comprising two or three periodic AlN/Al layers grown on a substrate0.5Ga0.5N/AlN Structure, each periodic AlN/Al0.5Ga0.5In the N/AlN structure, AlN/Al0.5Ga0.5The growth period of N/AlN is 33 groups.
2. The AlN/AlGaN multicycle one-dimensional photonic crystal filter according to claim 1, wherein: the structure of the multicycle one-dimensional photonic crystal filter is as follows: substrate/[ A ]1/B1/A1]33/[A2/B2/A2]33Wherein A is1The material is AlN, and the thickness is 16.88 nm; b is1Is made of Al0.5Ga0.5N, the thickness is 29.81 nm; a. the2The material is AlN, and the thickness is 18.07 nm; b is2Is made of Al0.5Ga0.5N, thickness 31.90 nm.
3. The AlN/AlGaN multicycle one-dimensional photonic crystal filter according to claim 1, wherein: the structure of the multicycle one-dimensional photonic crystal filter is as follows: substrate/[ A ]1/B1/A1]33/[A3/B3/A3]33/[A4/B4/A4]33Wherein A is1The material is AlN, and the thickness is 16.88 nm; b is1Is made of Al0.5Ga0.5N, the thickness is 29.81 nm; a. the3The material is AlN, and the thickness is 17.77 nm; b is3Is made of Al0.5Ga0.5N, the thickness is 31.38 nm; a. the4The material is AlN, and the thickness is 18.96 nm; b is4Is made of Al0.5Ga0.5N, thickness 33.47 nm.
4. The AlN/AlGaN multicycle one-dimensional photonic crystal filter according to any one of claims 1 to 3, wherein: the substrate is a sapphire substrate.
5. The AlN/AlGaN multicycle one-dimensional photonic crystal filter according to claim 4, wherein: the AlN has a refractive index of 2.11 and an extinction coefficient of 0; al (Al)0.5Ga0.5The refractive index of N is 2.39 and the extinction coefficient is 0.00247.
6. A solar-blind photodetector, characterized in that: a multicycle one-dimensional photonic crystal filter comprising the AlN/AlGaN crystal according to any one of claims 1 to 5.
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| CN113671688B (en) * | 2021-07-27 | 2022-10-18 | 南京大学 | Broad-spectrum adjustable ultra-narrow bandpass filtering system |
| CN113644164B (en) * | 2021-08-11 | 2023-12-15 | 吉林建筑大学 | Preparation method of phototransistor for deep ultraviolet low-light detection |
| CN114171634B (en) * | 2021-12-03 | 2024-03-15 | 中国科学院长春光学精密机械与物理研究所 | Solar blind ultraviolet photoelectric detector and preparation method thereof |
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| WO2000057485A2 (en) * | 1999-03-24 | 2000-09-28 | Honeywell Inc. | Back-illuminated heterojunction photodiode |
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