CN109326689A - A kind of UVLED structure and preparation method thereof improving light extraction efficiency - Google Patents
A kind of UVLED structure and preparation method thereof improving light extraction efficiency Download PDFInfo
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- CN109326689A CN109326689A CN201710644311.5A CN201710644311A CN109326689A CN 109326689 A CN109326689 A CN 109326689A CN 201710644311 A CN201710644311 A CN 201710644311A CN 109326689 A CN109326689 A CN 109326689A
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- 238000000605 extraction Methods 0.000 title claims abstract description 18
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 24
- 239000010432 diamond Substances 0.000 claims abstract description 18
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 18
- 230000004888 barrier function Effects 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 229910016920 AlzGa1−z Inorganic materials 0.000 claims abstract description 11
- 229910002601 GaN Inorganic materials 0.000 claims description 9
- 229910017083 AlN Inorganic materials 0.000 claims description 8
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 8
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- -1 rare earth compound Chemical class 0.000 claims description 3
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims 1
- 239000010437 gem Substances 0.000 claims 1
- 229910001751 gemstone Inorganic materials 0.000 claims 1
- 238000010521 absorption reaction Methods 0.000 abstract description 6
- 238000000034 method Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 239000002096 quantum dot Substances 0.000 description 3
- 230000004913 activation Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000004943 liquid phase epitaxy Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 239000011435 rock Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000003139 buffering effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
A kind of UV LED structure and preparation method thereof improving light extraction efficiency, structure includes substrate, AlN buffer layer, undoped AlGaN buffer layer, N-shaped AlGaN layer, AlxGa1‑xN/AlyGa1‑yN multi-quantum well active region, the p-type Al for mixing MgzGa1‑zN electronic barrier layer and p-type ohmic contact layer, p-type ohmic contact layer are diamond thin；Preparation method, comprising the following steps: (1) successively growing AIN buffer layer, undoped AlGaN buffer layer, N-shaped AlGaN layer, Al on substratexGa1‑xN/AlyGa1‑yN multi-quantum well active region and AlzGa1‑zN electronic barrier layer obtains AlGaN base epitaxial wafer；(2) in AlzGa1‑zThe diamond thin with a thickness of 3-200nm of growth doping B element on N electronic barrier layer.The present invention eliminates contact layer to the absorption problem of UV light, can significantly promote the light extraction efficiency of UV LED using diamond thin as the structure of ohmic contact layer.Meanwhile carrier concentration is effectively promoted, to more effectively form ohmic contact layer, reduces device operating voltages.
Description
Technical field
The present invention relates to a kind of for improving the structure and its system of the UV LED (UV LED) of light extraction efficiency
Preparation Method belongs to photoelectron technical field.
Background technique
In recent years, LED is increasingly becoming one of most valued light source technology, and one side LED has feature small in size；Separately
One side LED has the electricity-saving characteristic of low current, low voltage drive；It also has sound construction, shock resistance and antidetonation energy simultaneously
Power is strong, many merits such as extra long life.Especially in ultraviolet region, the ultraviolet LED of AlGaN based multiple quantum well has shown that huge
Advantage, become one of the hot spot of current ultraviolet light photo device development.AlGaN based multiple quantum well UV-LED device has wide
Application prospect.Ultraviolet light silk-screen printing, polymer solidification, environmental protection, air and Water warfare, medical treatment with biomedicine, it is white
There is major application value in the fields such as optical illumination and military detection, space secret communication.
Since p-type AlGaN layer cannot provide good hole injection efficiency, cause to be hardly formed good Ohmic contact,
Therefore p-GaN layer is mostly used to make p-type Ohmic contact in p-type layer side, to improve the hole injection efficiency of p-type layer.But due to
P-GaN layer radiates Quantum Well to p-type layer side the strong absorption of ultraviolet light (200nm-365nm) and lower reflectivity
Light is absorbed by p-GaN layer, to cannot be extracted, causes lower light extraction efficiency.Non-extracted wide part quilt
Absorption is converted into heat, increase device temperature, seriously affects the reliability of device.
In order to solve this problem, the prior art generallys use upside-down mounting and changes the method for P-type layer.Chinese patent literature
A kind of UV LED (UV-LED) with quantum dot p plot structure disclosed in CN105355736A.Due to using GaN or
Low Al component AlGaN quantum dot easily realizes Mg doping and activation as the area p material；Again because quantum dot is compared to higher-dimension material
, can be to avoid its absorption to ultraviolet emergent light with bigger forbidden bandwidth, therefore the outer of UV-LED can be improved in the structure
Quantum efficiency and luminous power.But the structure still can not solve the problems, such as P-type layer to the serious absorption of long wavelength UV light.
Summary of the invention
In order to solve deficiency existing for p-type ohmic contact layer in existing UV LED chip, the present invention provides one kind can be complete
It totally disappeared except UV Absorption, improve the UV LED structure of light extraction efficiency, while the preparation method of the structure being provided.
The UV LED structure of raising light extraction efficiency of the invention, using following technical scheme:
The structure includes substrate, AlN buffer layer, undoped AlGaN buffer layer, N-shaped AlGaN layer, AlxGa1-xN/AlyGa1- yN multi-quantum well active region, the p-type Al for mixing MgzGa1-zN electronic barrier layer and p-type ohmic contact layer, p-type ohmic contact layer are gold
Hard rock film.
The substrate is sapphire, silicon carbide, silicon, gallium nitride, aluminium nitride or rare earth compound.
The diamond thin with a thickness of 3-200nm.
The diamond thin doped chemical B, doping concentration are 1 × 1015/cm-3-8×1020/cm-3。
The AlxGa1-xN/AlyGa1-yN multi-quantum well active region and AlzGa1-zZ > y > x in N electronic barrier layer.
It is above-mentioned using diamond thin as the structure of p-type ohmic contact layer because the broad-band gap feature of diamond thin, does not inhale
The UV light that Quantum well active district issues is received, the light extraction efficiency of UV LED can be significantly promoted.
The preparation method of above-mentioned UV LED structure, comprising the following steps:
(1) successively growing AIN buffer layer, undoped AlGaN buffer layer, N-shaped AlGaN layer, Al on substratexGa1-xN/
AlyGa1-yN multi-quantum well active region and AlzGa1-zN electronic barrier layer obtains AlGaN base epitaxial wafer；
(2) in the Al of AlGaN base epitaxial waferzGa1-zOn N electronic barrier layer growth doping B element with a thickness of 3-200nm
Diamond thin, as p-type ohmic contact layer.
Growth conditions in the step (1) is 500 DEG C -1600 DEG C of temperature, pressure 30-800mbar.
Growth temperature in the step (2) is 20-1300 DEG C, and B element doping concentration is 1 × 1015/cm-3-8×1020/
cm-3。
Compared with prior art, the invention has the characteristics that:
1., using diamond p-type contact layer, energy band can be improved compared with traditional P-GaN is as ohmic contact material, it is real
The 0 of the UV light now issued to active area absorbs.
The activation energy of the p-type acceptor Mg of 2.GaN material is high, causes P-type carrier concentration low, ohm of P-type is caused to connect
Electric shock resistance is big, and device operating voltages are high.And diamond p-type contact layer is used, carrier concentration is effectively promoted, to more have
Effect forms ohmic contact layer, reduces device operating voltages.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of UV LED of the present invention.
In figure: 1. substrates, 2.AlN buffer layer, 3.n type AlGaN layer, 4. quantum well layers, 5.AlzGa1-zN electronic barrier layer,
6. ohmic contact layer.
Specific embodiment
UV LED structure of the invention, as shown in Figure 1, including substrate 1, the AlN buffer layer 2, n from bottom to top set gradually
Type AlGaN layer 3, quantum well layer 4, AlzGa1-zN electronic barrier layer 5 and p-type ohmic contact layer 6.P-type ohmic contact layer 6 is using gold
Hard rock film layer.Structure of the diamond film layer as ohmic contact layer, because the broad-band gap feature of diamond thin, does not absorb
The UV light that Quantum well active district issues, can significantly promote the light extraction efficiency of UV LED.
1 substrate of substrate is sapphire, silicon carbide, silicon, gallium nitride, aluminium nitride or rare earth compound.AlxGa1-xN/
AlyGa1-yN multi-quantum well active region 4 and AlzGa1-zZ > y > x in N electronic barrier layer 5.
The preparation method of above-mentioned UV LED structure, comprising the following steps:
(1) using the growing methods such as MOCVD (vapour phase epitaxy), MBE (molecular beam epitaxy) or LPE (liquid phase epitaxy), anti-
Answering room temperature is 500 DEG C -1600 DEG C and under conditions of pressure is 30-800mbar, and AlN buffering is successively carried out on substrate layer 1
Layer, N-shaped AlGaN layer, AlxGa1-xN/AlyGa1-yN quantum well layer and AlzGa1-zThe deposition of N electronic barrier layer.
(2) using the side such as LPCVD (low-pressure chemical vapour deposition technique), IBD, HF CVD (pyrolytic chemical vapor deposition)
Method, in AlzGa1-zThe diamond thin that a layer thickness is 3nm-500nm is grown on N electronic barrier layer 5, forms p-type Ohmic contact
Layer 6, growth temperature are 20-1300 DEG C, doped chemical B, and doping concentration is 1 × 1015/cm-3-8×1020/cm-3。
UV LED chip is made on the epitaxial wafer that step (2) obtains, in N-type ALGaN and diamond thin layer surface system
Standby P electrode and N electrode, obtain wafer.Above-mentioned wafer is thinned and is drawn after splitting and obtains UV LED chip.
Claims (8)
1. a kind of UV LED structure for improving light extraction efficiency, including the substrate, AlN buffer layer, non-set gradually from bottom to top
Adulterate AlGaN buffer layer, N-shaped AlGaN layer, AlxGa1-xN/AlyGa1-yN multi-quantum well active region, the p-type Al for mixing MgzGa1-zN electricity
Sub- barrier layer and p-type ohmic contact layer, it is characterized in that: ohmic contact layer is diamond thin.
2. the UV LED structure according to claim 1 for improving light extraction efficiency, it is characterized in that: the substrate is blue precious
Stone, silicon carbide, silicon, gallium nitride, aluminium nitride or rare earth compound.
3. the UV LED structure according to claim 1 for improving light extraction efficiency, it is characterized in that: the diamond thin
With a thickness of 3-200nm.
4. the UV LED structure according to claim 1 for improving light extraction efficiency, it is characterized in that: the diamond thin is mixed
Miscellaneous element B, doping concentration are 1 × 1015/cm-3-8×1020/cm-3。
5. the UV LED structure according to claim 1 for improving light extraction efficiency, it is characterized in that: the AlxGa1-xN/
AlyGa1-yN multi-quantum well active region and AlzGa1-zZ > y > x in N electronic barrier layer.
6. the preparation method of the UV LED structure of light extraction efficiency is improved described in a kind of claim 1, it is characterized in that: including following
Step:
(1) successively growing AIN buffer layer, undoped AlGaN buffer layer, N-shaped AlGaN layer, Al on substratexGa1-xN/AlyGa1- yN multi-quantum well active region and AlzGa1-zN electronic barrier layer obtains AlGaN base epitaxial wafer；
(2) in the Al of AlGaN base epitaxial waferzGa1-zThe p-type with a thickness of 3-200nm of growth doping B element on N electronic barrier layer
Diamond thin.
7. the preparation method of the UV LED structure according to claim 6 for improving light extraction efficiency, it is characterized in that: the step
Suddenly the growth conditions in (1) is 500 DEG C -1600 DEG C of temperature, pressure 30-800mbar.
8. the preparation method of the UV LED structure according to claim 6 for improving light extraction efficiency, it is characterized in that: the step
Suddenly the growth temperature in (2) is 20-1300 DEG C, and B element doping concentration is 1 × 1015/cm-3-8×1020/cm-3。
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| CN201710644311.5A CN109326689A (en) | 2017-07-31 | 2017-07-31 | A kind of UVLED structure and preparation method thereof improving light extraction efficiency |
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| CN201710644311.5A CN109326689A (en) | 2017-07-31 | 2017-07-31 | A kind of UVLED structure and preparation method thereof improving light extraction efficiency |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111640828A (en) * | 2020-06-18 | 2020-09-08 | 佛山紫熙慧众科技有限公司 | AlGaN-based ultraviolet LED epitaxial structure |
| CN111769186A (en) * | 2020-07-31 | 2020-10-13 | 佛山紫熙慧众科技有限公司 | Novel AlGaN-based ultraviolet LED epitaxial structure |
| CN112420887A (en) * | 2020-11-20 | 2021-02-26 | 广东省科学院半导体研究所 | Deep ultraviolet LED device and manufacturing method thereof |
| CN112687768A (en) * | 2020-12-01 | 2021-04-20 | 木昇半导体科技(苏州)有限公司 | Epitaxial material growth method capable of modulating grating array structure |
| CN114361283A (en) * | 2021-03-08 | 2022-04-15 | 常熟理工学院 | Deep ultraviolet detector and preparation method thereof |
| WO2022109853A1 (en) * | 2020-11-25 | 2022-06-02 | 苏州晶湛半导体有限公司 | Optoelectronic device and manufacturing method therefor |
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|---|---|---|---|---|
| CN102810609A (en) * | 2012-08-16 | 2012-12-05 | 厦门市三安光电科技有限公司 | Ultraviolet semiconductor light emitting device and manufacturing method thereof |
| CN104022203A (en) * | 2013-02-28 | 2014-09-03 | 山东华光光电子有限公司 | GaN-based light-emitting diode structure and preparation method thereof |
-
2017
- 2017-07-31 CN CN201710644311.5A patent/CN109326689A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102810609A (en) * | 2012-08-16 | 2012-12-05 | 厦门市三安光电科技有限公司 | Ultraviolet semiconductor light emitting device and manufacturing method thereof |
| CN104022203A (en) * | 2013-02-28 | 2014-09-03 | 山东华光光电子有限公司 | GaN-based light-emitting diode structure and preparation method thereof |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111640828A (en) * | 2020-06-18 | 2020-09-08 | 佛山紫熙慧众科技有限公司 | AlGaN-based ultraviolet LED epitaxial structure |
| CN111640828B (en) * | 2020-06-18 | 2021-08-31 | 佛山紫熙慧众科技有限公司 | AlGaN-based ultraviolet LED epitaxial structure |
| CN111769186A (en) * | 2020-07-31 | 2020-10-13 | 佛山紫熙慧众科技有限公司 | Novel AlGaN-based ultraviolet LED epitaxial structure |
| CN111769186B (en) * | 2020-07-31 | 2023-03-10 | 佛山紫熙慧众科技有限公司 | Novel AlGaN-based ultraviolet LED epitaxial structure |
| CN112420887A (en) * | 2020-11-20 | 2021-02-26 | 广东省科学院半导体研究所 | Deep ultraviolet LED device and manufacturing method thereof |
| WO2022109853A1 (en) * | 2020-11-25 | 2022-06-02 | 苏州晶湛半导体有限公司 | Optoelectronic device and manufacturing method therefor |
| CN112687768A (en) * | 2020-12-01 | 2021-04-20 | 木昇半导体科技(苏州)有限公司 | Epitaxial material growth method capable of modulating grating array structure |
| CN114361283A (en) * | 2021-03-08 | 2022-04-15 | 常熟理工学院 | Deep ultraviolet detector and preparation method thereof |
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