CN104362076A - Temperature control device, temperature control system and temperature control method of semiconductor device - Google Patents
Temperature control device, temperature control system and temperature control method of semiconductor device Download PDFInfo
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- CN104362076A CN104362076A CN201410488132.3A CN201410488132A CN104362076A CN 104362076 A CN104362076 A CN 104362076A CN 201410488132 A CN201410488132 A CN 201410488132A CN 104362076 A CN104362076 A CN 104362076A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
Abstract
The invention discloses a temperature control device. The temperature control device comprises a silicon wafer carrying portion, a plurality of light heating portion, a temperature measuring portion and a temperature control portion. The silicon wafer carrying portion comprises a technical cavity, a base and a rotating mechanism, wherein the base keeps a silicon wafer horizontal, and the rotating mechanism rotates the base. The light heating portions emit light to the silicon wafer so as to form a plurality of heating areas on the surface of the silicon wafer and comprise a plurality of first linear heaters and second linear heaters, wherein the first linear heaters and the second linear heaters are parallelly distributed on the upper side and the lower side of the outside of the technical cavity and perpendicular to one another in the horizontal direction. The temperature measuring portion comprises a plurality of temperature sensors used for measuring the temperature of the heating areas and is arranged in the technical cavity at the positions corresponding to the heating areas. The temperature control portion is used for controlling the output power of the light heating portions according to the outputted temperature of the temperature sensors and the target temperature of the heating areas. The temperature control device is capable of accurately controlling quick heating and cooling of the silicon wafer and can guarantee temperature uniformity of the points inside the silicon wafer.
Description
Technical field
The present invention relates to a kind of temperature control system for semiconductor equipment and control method thereof, refer more particularly to a kind of can rapid temperature rise and drop the semiconductor equipment temperature control equipment of precise control of temperature, system and control method.
Background technology
The thermal response adopted in semiconductor machining, Technology for Heating Processing are a kind of conventional methods obtaining better material.Many thermal responses and heat treatment process have similar feature: as the physics in technique and chemical reaction need very high temperature just can reach predetermined effect; In order to shorten process time, cost-saving, require temperature rate faster; Meanwhile, in order to obtain the uniformity of better sheet intrinsic parameter, reduce the repeatability etc. of Defect, guarantee technique, require the temperature field good stability of equipment, on silicon chip, Temperature Distribution is wanted evenly.
Existing semiconductor thermal technology equipment, the silicon epitaxy equipment of such as single silicon-chip process, require that technological temperature reaches more than 1100 DEG C, warming and cooling rate reaches 10 ~ 15 DEG C/s, and temperature homogeneity reaches ± and 1 DEG C.These indexs will directly affect the efficiency of device fabrication, and the quality of product is as thickness evenness, resistivity evenness, dislocation, sliding line etc.Along with die size is increasing, product quality requires more and more higher, requires that the temperature field size that will control in semiconductor equipment is also increasing.Existing single piece of silicon epitaxial device, its mode of heating is comparatively single, usually only adopts a kind of thermal source of form to heat, and the distribution of heater or irradiating angle do not have to combine with the layout of apparatus cavity completely yet.The impact of the many factors such as cavity body structure, air-flow, design of Cooling System is subject to due to thermo parameters method, existing single piece of silicon epitaxial device, easier occurrence temperature field wave phenomenon, make equipment reach the requirement of above-mentioned technic index simultaneously, and stable state is in technical process, be often difficult to accomplish.In practice, need engineers and technicians frequently to intervene, make output and product quality be subject to severely restricts.
Therefore, existing single piece of silicon epitaxial device is in the design of temperature control system, more and more be difficult to the needs meeting product and technological development, one is provided to respond fast, flexible, the temperature control system that control precision is high and corresponding control method are the technical tasks that the present invention needs to solve.
Summary of the invention
Main purpose of the present invention aims to provide that one can realize can rapid temperature rise and drop, accurately controls silicon temperature, and ensures a kind of temperature control system and the control method thereof of temperature homogeneity in sheet.
For reaching above-mentioned purpose, the invention provides following technical scheme:
A kind of temperature control equipment, comprises silicon chip supporting part, multiple smooth heating part, thermometric portion and temperature control part.Silicon chip supporting part comprise inner form a Seal treatment space processing chamber, be positioned at described processing chamber for the pedestal of level maintenance silicon chip and the rotating mechanism rotating described pedestal; Multiple heating part is used for adding thermo-optical to form multiple heating region at described silicon chip surface to described silicon chip injection, it comprises multiple first wire line heater and multiple second wire heater, this first wire heater is parallel with the second wire heater be distributed in described processing chamber outside the upper side and lower side, mutually vertically arrange in horizontal plane direction.Thermometric portion comprises multiple temperature sensor, is positioned at the position that described processing chamber corresponds to described multiple heating region, for measuring the temperature of each described heating region.Temperature control part controls the power output of described multiple smooth heating part according to described multiple temperature value of temperature sensor output and the target temperature of each described heating region.
Preferably, described pedestal comprises base body and supporter, and the upper surface of described base body forms the recess for holding described silicon chip, and described supporter is driven by described rotating mechanism and drives described base body to rotate.
Preferably, described multiple first wire heater is for be equidistantly uniformly distributed, and described multiple second wire heater is equidistantly distributed in the both sides of described supporter symmetrically in the mode of not interfering with described supporter and described rotating mechanism.
Preferably, described multiple heating part also comprises multiple point-like heating lamp, and described multiple point-like heating lamp is installed on that described processing chamber is outside, immediately below described base body and the inner side being positioned at described multiple second wire heater is around described supporter.
Preferably, described point-like heating lamp is even number and symmetrical with the pivot of described pedestal.
Preferably, described heating part also comprises reflecting plate and reflector, described reflecting plate surrounds described multiple first wire heater and the second wire heater, makes silicon chip described in its directive for the light that reflects from each described first wire heater and the injection of the second wire heater; Described reflector surrounds described multiple point-like heating lamp, makes silicon chip described in its directive for the light that reflects from each described point-like heating lamp injection.
Preferably, described heating region comprises the thermal treatment zone, center and edge heating district, described multiple temperature sensor comprises for measuring the first temperature sensor of described edge heating district temperature and the second temperature sensor for measuring described center Heating Zone Temperature, and described second temperature sensor to insert in described supporter and by described rotating mechanism driven rotary.
Preferably, described second temperature sensor is connected to corresponding described temperature controller by rotary connector.
Preferably, described silicon chip supporting part also comprises substantially parallel with described base body upper surface and around the static base ring of this base body periphery.
Preferably, described temperature control part comprises multiple temperature controller, proportional divider and multiple power regulator, described multiple temperature controller and described multiple temperature sensor one_to_one corresponding, for receiving the temperature value that exports from each described temperature sensor and generating the heating power output valve of each described heating region; Described multiple power regulator is corresponding with described multiple heating region, the heating power output valve of heating region described in each is dispensed to described power regulator corresponding to this heating region with preset ratio by described proportional divider, makes it control each described heating part heating in this region according to the power stage value of this distribution.
Preferably, described power controller is power of controlled silicon controller or solid-state relay; Described proportional divider is programmable logic controller (PLC) or scaling circuit.
Preferably, described second temperature sensor is dual channel sensor, and its output signal exports corresponding described temperature controller to by first passage, and exports host computer to for overtemperature alarm by second channel.
The invention allows for a kind of temperature control system, comprise said temperature control device and host computer, described host computer is connected with described temperature control part, and for sending controling parameters, described controling parameters comprises target temperature and the temperature rate of each described heating region.
Preferably, described temperature control part comprises multiple temperature controller, proportional divider and multiple power regulator, described multiple temperature controller and described multiple temperature sensor one_to_one corresponding, for receive export from each described temperature sensor temperature value, generate the heating power output valve of each described heating region from the target temperature of each described heating region of described host computer and temperature rate; Described multiple power regulator is corresponding with described multiple heating region, the heating power output valve of heating region described in each is dispensed to described power regulator corresponding to this heating region with preset ratio by described proportional divider, makes it control each described heating part heating in this region according to the power stage value of this distribution; Described controling parameters also comprises the algorithm of heating power output valve and the preset ratio of described proportional divider employing, described host computer is connected with described multiple temperature controller and described proportional divider, for exporting the target temperature of each described heating region and the algorithm of described heating power output valve to described multiple temperature controller, and export described preset ratio to described proportional divider.
The invention allows for a kind of temperature-controlled process based on said temperature control system, comprise the following steps: step 1, by the temperature of each described heating region of silicon chip described in described multiple temperature sensor measurement, and export described temperature control part to; And step 2, the target temperature of the temperature recorded according to each described temperature sensor and each described heating region controls the power output of each described smooth heating part corresponding to heating region described in each.
Preferably, described temperature control part comprises multiple temperature controller, proportional divider and multiple power regulator, described multiple temperature controller and described multiple temperature sensor one_to_one corresponding, described multiple power regulator is corresponding with described multiple heating region, and the temperature that in step 1, each described temperature sensor records exports described multiple temperature controller to; Step 2 comprises further: the temperature value exported according to each described temperature sensor and the target temperature of each described heating region generate the heating power output valve of each described heating region; The heating power output valve of heating region described in each is dispensed to described power regulator corresponding to this heating region with preset ratio; Control the power output of each described smooth heating part of this heating region with the heating power output valve that it distributes corresponding to the described power regulator of this heating region.
The temperature control system of semiconductor diffusion equipment proposed by the invention and control method, heat by being positioned at processing chamber outside and the first wire heater of square crossing and the second wire heater, and rotated by pedestal heat conduction and pedestal, can reach and silicon chip is rapidly heated, and ensure that silicon chip each several part is heated evenly.
Accompanying drawing explanation
Fig. 1 is the calcspar of one embodiment of the invention semiconductor equipment temperature control system;
Fig. 2 is the structural representation of one embodiment of the invention semiconductor equipment temperature control equipment;
Fig. 3 is the silicon chip supporting part of one embodiment of the invention semiconductor equipment temperature control equipment and the vertical view of light heating part;
Fig. 4 is the stereogram of the temperature sensor of one embodiment of the invention semiconductor equipment temperature control equipment;
Fig. 5 is the distribution schematic diagram of the temperature sensor of one embodiment of the invention semiconductor equipment temperature control equipment.
[primary clustering symbol description]
1 first wire heater; 2 processing chambers; 3 pedestals; 4 second wire heaters; 5 point-like heating lamps;
6 reflecting plates; 7 rotating mechanisms; 8 base rings; 9,11,12,13-1,13-2 temperature-measuring heat couple;
10 rotary connectors.
Embodiment
For making content of the present invention clearly understandable, below in conjunction with Figure of description, content of the present invention is described further.Certain the present invention is not limited to this specific embodiment, and the general replacement known by those skilled in the art is also encompassed in protection scope of the present invention.
In describing the invention, it should be noted that, unless otherwise prescribed and limit, term " installation ", " being connected ", " connection " should be interpreted broadly, such as, can be mechanical connection or electrical connection, also can be the connection of two element internals, can be directly be connected, also indirectly can be connected by intermediary, for the ordinary skill in the art, the concrete meaning of above-mentioned term can be understood as the case may be.
In describing the invention, it should be noted that, term " " center ", " edge ", " on ", D score, "front", "rear", "left", "right", " vertically ", " level ", " interior ", the orientation of the instruction such as " outward " or position relationship be based on orientation shown in the drawings or position relationship; be only the present invention for convenience of description and simplified characterization; instead of instruction or imply the device of indication or element must have specific orientation, with specific azimuth configuration and operation, therefore can not be interpreted as limitation of the present invention.In addition, term " first ", " second " only for describing object, and can not be interpreted as instruction or hint relative importance.
As shown in Figure 1, whole control system comprises temperature control equipment and host computer to the theory diagram of single piece of silicon treatment facility temperature control system.Temperature control equipment comprises the processing chamber (epitaxy technique chamber) for processing silicon chip, the temperature measurement fraction be arranged in processing chamber, the light heating part being arranged on processing chamber exterior circumferential and temprature control unit.In the present embodiment, processing chamber is epitaxy technique chamber, but should be appreciated that single piece of silicon treatment facility of the present invention is not limited to this, and such as processing chamber also may be used for other chemical vapour deposition (CVD).Light heating part is used for adding thermo-optical to heat silicon chip surface to processing chamber injection, and thermometric portion is for measuring the temperature of silicon chip surface.Temperature control part goes out temperature control signals according to the temperature value of target temperature, the measurement of thermometric portion and the calculation of parameter of user's setting, be sent to each light heating part thus change the power of each smooth heating part, and then making silicon chip surface uniformity of temperature profile and consistent with target temperature.Temperature control part comprises temperature controller, for regulating the proportional controller of each heating part power proportions, as programmable logic controller (PLC) (be called for short PLC) or ratio circuit and the power regulator controlling heating part power, power regulator is such as power of controlled silicon adjuster or solid-state relay.
Host computer provides an interactive interface, with user-friendly, setup parameter and data monitoring.The controling parameters such as the preset ratio that user adopts by the algorithm of host computer target setting temperature, temperature rate, temperature control signals, proportional divider, also can obtain the information such as warning message that temperature controller exports or measuring tempeature value from host computer.To describe in detail hereinafter alternately of host computer and temperature control equipment.
Next will elaborate to the present invention in conjunction with specific embodiments.
Please refer to Fig. 2 to Fig. 4, in the present embodiment, processing chamber 2 is approximate rectangular shape.For adapting to the hot environment of epitaxy technique, require that processing chamber has good airproof performance, feature that light transmission is good, the material of processing chamber is preferably high-purity transparent quartz.Other quartz pieces in quartz chamber or chamber preferably carry out flame polish adding man-hour, and annealing in process is to eliminate stress.Processing chamber inside forms Seal treatment space, is wherein provided with the pedestal 3 keeping silicon chip for level.Processing chamber is create a confined space be isolated from the outside around silicon chip, and this space can ensure conduction and the absorption of heat on the one hand better, can prevent process gas from leaking on the other hand, by its reacting gas and caloric restriction in certain scope.Pedestal has spinfunction, drives rotate by rotating mechanism 7.Specifically, hollow rotating mechanism is equipped with as rotating support shaft 7 in centre, pedestal 3 lower surface, and rotating support shaft 7, through chamber, the below wall of processing chamber 2, is connected to drive motors (not shown) by synchronous pulley.Synchronous machine driven rotary back shaft 7 can at the uniform velocity rotate, and rotating support shaft 7 is with moving base 3 steadily to rotate in base ring 8, to obtain better temperature and airflow homogeneity.Processing chamber 2, pedestal 3 and rotating mechanism 7 are for forming the silicon chip supporting part providing heat transfer and spinfunction.
Pedestal 3 comprises base body and is supported in the supporter (not shown) below base body.Supporter drives rotation by rotating mechanism 7, and base body also at the uniform velocity rotates thereupon being driven and obtaining better temperature homogeneity and airflow homogeneity.As shown in Figure 4, the mid portion of the upper surface of base body forms a recess to hold silicon chip, and the diameter of this recess, slightly larger than silicon chip, can play positioning action to silicon chip, and during to prevent technique, silicon chip slides or dislocation.Pedestal is preferably graphite material, and surface can scribble SiC coating or other are high temperature resistant, pyroconductivity good and the coating of stable chemical nature.Preferably, a base ring 8 is looped around the periphery of base body, and it is ring-type and basic parallel with the upper surface of base body, and base ring 8 does not rotate with the rotation of pedestal for inactive state.So, base ring 8 provides the environment of a relative closure around silicon chip, and constraint heat leaks to improve the homogeneity of temperature on silicon chip.Base ring 8 can be all graphite material with pedestal, and surface is covered with SiC coating.
Please continue to refer to Fig. 2, multiple smooth heating part comprises multiple first wire heater 1 and multiple second wire heater 4, lays respectively at above and below outside processing chamber 2.First wire heater 1 be arranged in parallel with the second wire heater 4 and is all parallel to silicon chip surface, mutually vertical in horizontal plane direction, i.e. the first wire heater 1 of top and the second wire heater 4 of below and arrange in opposite directions by being parallel to each other in orthogonal direction level under upright projection.Preferably, the first wire heater 1 on upper strata is for being equidistantly uniformly distributed and being in same level, cover directly over pedestal 3 and base ring 8, the second wire heater 4 of lower floor is symmetrically distributed in the both sides of base supports body and is in same level, avoids interfering with supporter and rotating mechanism 7.The the second wire heater 4 being positioned at every side is also preferably equidistantly uniformly distributed.On the other hand, being positioned at inside wire heater 4 immediately below pedestal 3, multiple point-like heater 5 being also installed, for heating the lower surface middle body of base body.Because the position occupied at rotating mechanism 7 cannot arrange wire heater 4, the uneven of heating can be caused.Therefore, point-like heater 5 can make up because below wire heater 4 arranges the uneven impact caused.In the present embodiment, point-like heater is point-like heating lamp, and point-like heating lamp 5, around supporter, is preferably even number (in the present embodiment being 4) and symmetrical with the pivot of pedestal.The position of point-like heating lamp 5 and angle can adjust neatly among a small circle.In the present embodiment, the first wire heater 1 and the second wire heater 2 are infrared light heater, and the Infrared of these light heating parts injection heats silicon chip by pedestal 3 heat conduction after processing chamber 2 transmission.The heated light sources adopted in the present embodiment is infrared ray, and what also can adopt other specific wavelengths that can be absorbed by silicon chip in practical application adds thermo-optical.
In addition, reflecting element also can be installed outside light heating part to reflect luminous energy, thus suppress luminous energy to the direction diffusion except silicon chip.Particularly, outside the first wire heater 1 and the second wire heater 4, surrounding is all installed reflecting plate 6 and is surrounded, then coated reflector around point-like heating lamp 5.Reflecting plate 6 installs formation one cavity around the outside of wire heater 1 and 4, and with point-like heating lamp 5 intersection opening; A then coated reflector separately around each point-like heating lamp 5.Reflecting plate 6 and reflector are heatproof, the coating of above-mentioned material is made or scribbled to the material of not oxidizable, easy reverberation.Such as reflecting plate 6 and reflector can be metal material or surface gold-plating process.According to the position of wire heater and pedestal, it is that curved surface is to ensure that reverberation concentrates on silicon chip that reflecting plate 6 can be designed as inwall reflecting surface.The shape of reflector then can be determined according to point-like heating lamp shape.By increasing reflecting element, make to add thermo-optical to reflect towards the mode of silicon chip from each light heating part, thus uniform high-efficiency ground irradiates luminous energy to silicon chip.
Incorporated by reference to reference to Fig. 2 and Fig. 5, the correspondence position relation of each heater and processing chamber 2 more clearly can be reflected.As shown in the figure, the multiple smooth heating part in the present embodiment comprises 8 the first wire heaters, 1,6 the second wire heaters 4 and 4 point-like heating lamps 5.8 the first wire heaters 1 are arranged on the top outside processing chamber 2, be uniformly distributed, and be in same level between these 8 wire heaters by parallel horizontal direction.6 the second wire heaters 4 are arranged on the below outside processing chamber 2, be respectively symmetrical arranged 3 respectively, be also be uniformly distributed by parallel horizontal direction, and be in same level between these 6 wire heaters in the both sides of rotating mechanism 7.Meanwhile, because 4 point-like heating lamps 5 are installed around rotating mechanism 7 symmetry.Arrange in opposite directions by crisscross level rectangular under upright projection between 8 the first wire heaters and 6 the second wire heaters 4, to guarantee to form stable heating-up temperature field.Pedestal 3 is in the territory, vertical footprint that 8 the first wire heaters 1 and 6 the second wire heaters 4 formed, to ensure to be subject to sufficient Infrared irradiation.
As shown in Figure 5, 8 the first wire heaters 1, 6 the second wire heaters 4 and 4 these light heating parts of point-like heating lamp 5 define multiple heating region at silicon chip surface, be respectively the anterior thermal treatment zone (being formed by 2 first wire heater 1 correspondences in left side), the thermal treatment zone, rear portion (being formed by 2 first wire heater 1 correspondences on right side), the first sidepiece thermal treatment zone (being formed by 2 the second wire heater 2 correspondences of upside), the second sidepiece thermal treatment zone (being formed by 2 the second wire heater 2 correspondences of downside), with the thermal treatment zone, center (by 4 the first wire heaters 1 of centre, two middle the second wire heaters 2 and 4 point-like heating lamp 5 correspondences are formed).Wherein, the anterior thermal treatment zone, the thermal treatment zone, rear portion, the first sidepiece thermal treatment zone and the second sidepiece thermal treatment zone can synthesize edge heating region.By to the adjustment of these light heating part heating powers to adjust corresponding Heating Zone Temperature, the temperature that can realize silicon chip surface controls.
Continue referring to Fig. 5, corresponding to each thermal treatment zone, be provided with a temperature sensor.Temperature sensor can be temperature-measuring heat couple or optical temperature measuring component, and its temperature measured reflects the temperature of heating region substantially.The quantity of temperature sensor can be determined according to die size and chamber shape etc.In the present embodiment, the temperature sensor adopted for edge heating region is R type temperature-measuring heat couple, and R type temperature-measuring heat couple is installed on the parallel beneath of base ring in silicon chip surface; Adopt temperature-measuring heat couple 9 to insert in base supports body (as through rotating mechanism 7) for center heating region to be positioned at immediately below silicon chip center and to locate, perpendicular to silicon chip surface and upper end close to the back side of silicon chip.In the present embodiment, the equipment of considering is given with the installing space of temperature-measuring heat couple compacter, so, wherein 2 R type temperature-measuring heat couples in region, corresponding edge are substituted with a R type binary channels temperature-measuring heat couple and two of this binary channels temperature-measuring heat couple gauge heads are arranged on the adjacent both sides of base ring 8 lower surface, namely temperature-measuring heat couple 13 is binary channels thermocouple 13-1 and 13-2, the temperature of front area and the heating of the first sidepiece can be detected, temperature-measuring heat couple 12 can detect the temperature of the thermal treatment zone, rear portion, and thermocouple 11 is for detecting the temperature of the second sidepiece thermal treatment zone relative with the first sidepiece thermal treatment zone.Temperature-measuring heat couple 9 is for the temperature of the inspection center thermal treatment zone.Because pedestal drives rotation by rotating mechanism, temperature-measuring heat couple 9 also rotates thereupon, therefore connects a rotary connector 10 in temperature-measuring heat couple 9 lower end, because twisted wire causes temperature measurement signal Transmission when rotating to prevent temperature-measuring heat couple 9.In addition, the signal exported due to temperature-measuring heat couple in rotary course 9 is easily interfered, also current transducer is provided with between rotary connector 10 and temperature-measuring heat couple 9, temperature-measuring heat couple 9 outputs signal and is converted to current signal by current transducer, again this current signal is exported by rotary connector 10, to reduce to rotate the interference brought.On the other hand, temperature-measuring heat couple 9 is preferably binary channels temperature-measuring heat couple, one of them passage is used for the thermal treatment zone, center temperature for the temperature of the thermal treatment zone, center of measurement being exported to temperature control part controls, and another passage is then used for overtemperature alarm use for independently measuring tempeature being exported to host computer.
Next be illustrated to the temprature control unit of the present embodiment.Please refer to Fig. 1, temperature control part comprises temperature controller, proportional divider and power regulator.Temperature controller and temperature sensor one_to_one corresponding, in the present embodiment 5 temperature controllers (middle part, the first sidepiece, the second sidepiece, front portion, rear portion) correspond respectively to temperature-measuring heat couple 9,11,13-2,13-1 and 12.Each temperature controller receives the temperature value that exports from corresponding temperature-measuring heat couple and the target temperature of the heating region detected according to this temperature-measuring heat couple calculates the heating power output valve of this heating region.Such as, the calculation of parameter such as the temperature rate that temperature controller can adopt pid algorithm to set in conjunction with user based on the detected temperatures of heating region and the deviate of target temperature go out the heating power output valve in this region, in addition also can adopt the temperature control algorithm (MBTC) based on model, or other similar pid algorithms or the algorithm more complicated than pid algorithm calculate heating power output valve.
The heating power output valve passing ratio adjuster that each temperature controller exports, as PLC or ratio circuit, distributes to the power governor corresponding to this region with preset ratio.The allocation proportion wherein preset need be carried out calculating according to heater locations, heater power, processing chamber and base size and verify acquisition by experiment.Power regulator, as power of controlled silicon controller, solid-state relay etc., then the light heating part controlling this region with the power stage value of distributing is heated.For the thermal treatment zone, center, temperature-measuring heat couple 9 output temperature detection signal is to middle portion temperature controller, middle portion temperature controller calculates the heating power output valve of the thermal treatment zone, center according to the target temperature of temperature detection signal and the thermal treatment zone, center, this heating power output valve is distributed to one or more power regulators of the thermal treatment zone, center by proportional divider with preset ratio, power regulator regulates the power output of these six wire heaters and four point-like heating lamps accordingly.Corresponding to a thermal treatment zone, the quantity of power regulator can with the light heating part one_to_one corresponding of this thermal treatment zone, namely power regulator adjusts the power output of a light heating part; Or a power regulator also can control the power output of the multiple smooth heating part (as symmetrically arranged 4 point-like heating lamps) of this thermal treatment zone.Have above known, the output power value in different heating district is obtained by corresponding temperature controller operation independent, the power output passing ratio distributor of each light heating part of the same thermal treatment zone and power governor realize independent control, thus silicon chip zones of different can be realized all to be heated to consistent with its target temperature and the whole regional temperature of silicon chip is even.Further, in order to obtain the uniformity of silicon temperature distribution, the target temperature of each heating region can be set to different temperature as required.
Therefore, when the thermal treatment zone, center and the edge heating district temperature inequality of silicon chip, as the temperature of the thermal treatment zone, center higher than edge heating district time, the power output of each wire heater in region, corresponding edge can be increased, thus make the temperature of silicon chip central area and fringe region be tending towards even.Thus, temperature control part of the present invention can realize single loop closed-loop control, adds temperature controlled flexibility.
On the other hand, as previously mentioned, host computer is responsible for carrying out alternately with user, therefore, after the controling parameters such as target temperature, temperature rate, the control algolithm of each temperature controller, the preset ratio of proportional divider output of each heating region all can be set by the user, temperature control part is sent to by host computer.In addition, one of them passage of temperature-measuring heat couple 9 exports measuring tempeature to host computer independently, by host computer when center measuring tempeature exceeds the alarm temperature of setting, sends warning message.Certainly, reflection such as the measuring tempeature that host computer also can directly receive from temperature controller exceeds alarm temperature, or the warning message that temperature-measuring heat couple damages.
Be described further to the temperature-controlled process based on said temperature control device below.This temperature-controlled process comprises the following steps:
Step 1, temperature by each heating region of multiple temperature sensor measurement silicon chip, and export temperature control part to.
In this step, by be arranged on temperature-measuring heat couple below pedestal 9,11,12,13-1,13-2, measure the temperature of silicon chip 5 heating regions (center, the first sidepiece, rear portion, front portion, the second sidepiece), these temperature feed back to 5 temperature controllers of temperature control part respectively.
The target temperature of step 2, the temperature recorded according to each temperature sensor and each heating region controls the power output of each light heating part corresponding to each heating region.
In this step, first, the target temperature of the temperature that each temperature controller records according to each temperature-measuring heat couple of correspondence and each heating region that host computer sets calculates, and draws the heating power output valve needed for each heating region; Then, the heating power output valve of the heating region each temperature controller exported by PLC or ratio circuit according to the pro rate preset to and power regulator corresponding to this heating region; Afterwards, control the power output of the light heating part of this heating region with the heating power output valve that it is assigned to corresponding to the power regulator of this heating region.
In sum, temperature control equipment of the present invention is heated by the wire heater of square crossing, and is rotated by pedestal heat conduction and pedestal, can reach and be rapidly heated, and ensure that in silicon chip, each several part is heated evenly.The temperature of diverse location in silicon chip can be corrected easily by the setting of the target temperature in different heating region and the adjustment of each smooth heating part power proportions.
Although the present invention discloses as above with preferred embodiment; right described many embodiments are citing for convenience of explanation only; and be not used to limit the present invention; those skilled in the art can do some changes and retouching without departing from the spirit and scope of the present invention, and the protection range that the present invention advocates should be as the criterion with described in claims.
Claims (16)
1. a temperature control equipment, is characterized in that, comprising:
Silicon chip supporting part, it comprise inner form a Seal treatment space processing chamber, be positioned at described processing chamber for the pedestal of level maintenance silicon chip and the rotating mechanism rotating described pedestal;
Multiple smooth heating part, for adding thermo-optical to form multiple heating region at described silicon chip surface to described silicon chip injection, it comprises multiple first wire line heater and multiple second wire heater, this first wire heater is parallel with the second wire heater be distributed in described processing chamber outside the upper side and lower side, mutually vertically arrange in horizontal plane direction;
Thermometric portion, comprises multiple temperature sensor, is positioned at the position that described processing chamber corresponds to described multiple heating region, for measuring the temperature of each described heating region;
Temperature control part, the temperature value exported according to described multiple temperature sensor and the target temperature of each described heating region control the power output of described multiple smooth heating part.
2. temperature control equipment according to claim 1, it is characterized in that, described pedestal comprises base body and supporter, and the upper surface of described base body forms the recess for holding described silicon chip, and described supporter is driven by described rotating mechanism and drives described base body to rotate.
3. temperature control equipment according to claim 2, it is characterized in that, described multiple first wire heater is for be equidistantly uniformly distributed, and described multiple second wire heater is equidistantly distributed in the both sides of described supporter symmetrically in the mode of not interfering with described supporter and described rotating mechanism.
4. temperature control equipment according to claim 2, it is characterized in that, described multiple heating part also comprises multiple point-like heating lamp, and described multiple point-like heating lamp is installed on that described processing chamber is outside, immediately below described base body and the inner side being positioned at described multiple second wire heater is around described supporter.
5. temperature control equipment according to claim 4, is characterized in that, described point-like heating lamp is even number and symmetrical with the pivot of described pedestal.
6. temperature control equipment according to claim 4, it is characterized in that, described heating part also comprises reflecting plate and reflector, described reflecting plate surrounds described multiple first wire heater and the second wire heater, makes silicon chip described in its directive for the light that reflects from each described first wire heater and the injection of the second wire heater; Described reflector surrounds described multiple point-like heating lamp, makes silicon chip described in its directive for the light that reflects from each described point-like heating lamp injection.
7. temperature control equipment according to claim 2, it is characterized in that, described heating region comprises the thermal treatment zone, center and edge heating district, described multiple temperature sensor comprises for measuring the first temperature sensor of described edge heating district temperature and the second temperature sensor for measuring described center Heating Zone Temperature, and described second temperature sensor to insert in described supporter and by described rotating mechanism driven rotary.
8. temperature control equipment according to claim 7, is characterized in that, described second temperature sensor is connected to corresponding described temperature controller by rotary connector.
9. temperature control equipment according to claim 2, is characterized in that, described silicon chip supporting part also comprises substantially parallel with described base body upper surface and around the static base ring of this base body periphery.
10. temperature control equipment according to claim 1, it is characterized in that, described temperature control part comprises multiple temperature controller, proportional divider and multiple power regulator, described multiple temperature controller and described multiple temperature sensor one_to_one corresponding, for receiving the temperature value that exports from each described temperature sensor and generating the heating power output valve of each described heating region; Described multiple power regulator is corresponding with described multiple heating region, the heating power output valve of heating region described in each is dispensed to described power regulator corresponding to this heating region with preset ratio by described proportional divider, makes it control each described heating part heating in this region according to the power stage value of this distribution.
11. temperature control equipments according to claim 10, is characterized in that, described power controller is power of controlled silicon controller or solid-state relay; Described proportional divider is programmable logic controller (PLC) or scaling circuit.
12. temperature control equipments according to claim 7, it is characterized in that, described second temperature sensor is dual channel sensor, and its output signal exports corresponding described temperature controller to by first passage, and exports host computer to for overtemperature alarm by second channel.
13. 1 kinds of temperature control systems, it is characterized in that, comprise the temperature control equipment as described in any one of claim 1 ~ 9 and a host computer, described host computer is connected with described temperature control part, for sending controling parameters, described controling parameters comprises target temperature and the temperature rate of each described heating region.
14. temperature control systems according to claim 13, is characterized in that,
Described temperature control part comprises multiple temperature controller, proportional divider and multiple power regulator, described multiple temperature controller and described multiple temperature sensor one_to_one corresponding, for receive export from each described temperature sensor temperature value, generate the heating power output valve of each described heating region from the target temperature of each described heating region of described host computer and temperature rate; Described multiple power regulator is corresponding with described multiple heating region, the heating power output valve of heating region described in each is dispensed to described power regulator corresponding to this heating region with preset ratio by described proportional divider, makes it control each described heating part heating in this region according to the power stage value of this distribution;
Described controling parameters also comprises the algorithm of heating power output valve and the preset ratio of described proportional divider employing, described host computer is connected with described multiple temperature controller and described proportional divider, for exporting the algorithm of the target temperature of each described heating region, temperature rate and described heating power output valve to described multiple temperature controller, and export described preset ratio to described proportional divider.
15. 1 kinds based on the temperature-controlled process of temperature control equipment according to claim 1, is characterized in that, comprise the following steps:
Step 1, temperature by each described heating region of silicon chip described in described multiple temperature sensor measurement, and export described temperature control part to;
The target temperature of step 2, the temperature recorded according to each described temperature sensor and each described heating region controls the power output of each described smooth heating part corresponding to heating region described in each.
The temperature-controlled process of 16. temperature control systems according to claim 15, it is characterized in that, described temperature control part comprises multiple temperature controller, proportional divider and multiple power regulator, described multiple temperature controller and described multiple temperature sensor one_to_one corresponding, described multiple power regulator is corresponding with described multiple heating region, and the temperature that in step 1, each described temperature sensor records exports described multiple temperature controller to; Step S2 comprises further:
The target temperature of step S21, the temperature value exported according to each described temperature sensor and each described heating region generates the heating power output valve of each described heating region;
Step S22, the heating power output valve of heating region described in each is dispensed to described power regulator corresponding to this heating region with preset ratio;
Step S23, control the power output of each described smooth heating part of this heating region with the heating power output valve that it distributes corresponding to the described power regulator of this heating region.
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