CN104347790A - Manufacturing method and manufacturing device of planar thin-film thermoelectric device - Google Patents
Manufacturing method and manufacturing device of planar thin-film thermoelectric device Download PDFInfo
- Publication number
- CN104347790A CN104347790A CN201310337434.6A CN201310337434A CN104347790A CN 104347790 A CN104347790 A CN 104347790A CN 201310337434 A CN201310337434 A CN 201310337434A CN 104347790 A CN104347790 A CN 104347790A
- Authority
- CN
- China
- Prior art keywords
- hollowed
- mask plate
- out mask
- location hole
- thermoelectric arm
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 56
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 169
- 238000000034 method Methods 0.000 claims abstract description 56
- 238000000151 deposition Methods 0.000 claims abstract description 43
- 230000008021 deposition Effects 0.000 claims abstract description 41
- 238000005516 engineering process Methods 0.000 claims abstract description 20
- 238000009434 installation Methods 0.000 claims description 11
- 230000007246 mechanism Effects 0.000 claims description 10
- 230000008569 process Effects 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 238000000137 annealing Methods 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 230000008859 change Effects 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- 238000002207 thermal evaporation Methods 0.000 claims description 3
- 238000005566 electron beam evaporation Methods 0.000 claims description 2
- 239000012212 insulator Substances 0.000 claims description 2
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 2
- 238000004549 pulsed laser deposition Methods 0.000 claims description 2
- 238000005240 physical vapour deposition Methods 0.000 abstract description 8
- 229910000831 Steel Inorganic materials 0.000 description 38
- 239000010959 steel Substances 0.000 description 38
- 239000007789 gas Substances 0.000 description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000006073 displacement reaction Methods 0.000 description 6
- 238000013461 design Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 230000000873 masking effect Effects 0.000 description 4
- 238000013519 translation Methods 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000005057 refrigeration Methods 0.000 description 3
- 206010037660 Pyrexia Diseases 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000004062 sedimentation Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 238000009736 wetting Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000005678 Seebeck effect Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a manufacturing method and a manufacturing device of a planar thin-film thermoelectric device. The method comprises the following steps: 1 manufacturing hollowed-out mask plates (7,8,9), hollowed-out patterns of the hollowed-out mask plates being used for limiting at least part of patterns of the thin-film thermoelectric device, and fixing a substrate (1) on a substrate holder (6); 2 respectively forming at least one set of positioning holes (10) opposite in positions on the substrate holder and the hollowed-out mask plates, each set of positioning holes comprising at least three positioning holes, and placing positioning ball bearings (11) in the positioning holes so that the hollowed-out mask plates are positioned on the substrate holder at intervals; 3 clamping and fixing the substrate holder and the hollowed-out mask plates, and completing the deposition manufacturing of the hollowed-out patterns of the hollowed-out mask plates on the substrate through the hollowed-out mask plates by utilizing a physical vapor deposition technology. The patterns of the thermoelectric device are realized by a plurality of hollowed-out mask plates efficiently and conveniently, a ball bearing positioning mode is utilized to complete the accurate positioning, the operation is convenient and the efficiency is enhanced.
Description
Technical field
The present invention relates to the manufacture field of thermoelectric device, particularly, relate to a kind of manufacture method and producing device of plane thin film thermoelectric device.
Background technology
Thermoelectric device can realize the direct conversion of heat energy and electric energy, has two basic functions such as generating and refrigeration, can be widely used in many key areas such as electronics, photoelectron, space flight, national defence and biomedicine.Thermoelectric device is total solids structure, and have compact conformation, without movable part, without dry sound, the outstanding advantages such as uncontaminated gases discharge, more and more cause the extensive concern of people.Thin film thermoelectric device generally can be divided into plane (in-plane) and vertical-type (cross-plane) two kinds of structures.Fig. 1 shows a kind of schematic diagram of plane thin film thermoelectric device, in figure, often pair of N-type and P type thermoelectric arm form a thermocouple unit by connecting electrode, several thermocouple units in series form thermoelectric device together, whole device can be seen as and lie low at substrate surface, when when prolonging substrate surface and be parallel to an existence temperature gradient on thermoelectric arm direction, due to Seebeck effect, an output voltage can be obtained, general principle that thermoelectric device is used for generate electricity that Here it is from the terminals of device.
Except generating, plane thin film thermoelectric device can also be used for refrigeration, and in this case, thermoelectric arm generally needs to be arranged in an endocentric construction and surrounded by cold junction.Fig. 2 shows such example, and wherein all thermoelectric arms of device radially arrange around a center of circle, and often the angle organized in thermocouple unit between N-type and P type thermoelectric arm is all θ.In order to improve refrigeration, concatenation structure can also be adopted in the devices, as Fig. 3 shows a plane thin film thermoelectric device containing polarity structure, in following paper, description was had with the design of similar shown in this Fig. 3 and Fig. 2, comprise: people's papers such as A.J. Ge Luosi, draw from < < MEMS (micro electro mechanical system) magazine > >, 20 volumes (5 phase), 1201 pages of (2011) (A.J.Gross et al, Journal of Microelectromechanical Systems, 20(5), 1201(2011)), J.Y. gold waits people's paper, draw and generate electricity and energy conversion application micro & nano technology international symposium collected works > > from < <, Lu Wen, Belgium, 19-22 page (2010) (J.Y.Kim, Proceedings of the International Workshops on Micro and Nanotechnology for Power Generation and Energy Conversion Applications, Leuven, Belgium, 19-22(2010)).
The core of above-mentioned plane thin film thermoelectric device manufacture method is the mutual aligning between thermoelectric arm and the graphical and figure of electrode.Wherein, graphical mainly based on following two kinds of methods: one utilizes ultraviolet photolithographic and dry (wetting) method lithographic technique, another is based on hollowed-out mask plate (stencil mask) technology, relative to the former, rear a kind of method relative ease, required figure directly can be formed in processes of physical vapor deposition, avoids the step such as ultraviolet photolithographic and dry (wetting) method etching.But for second method, owing to needing to use polylith hollowed-out mask plate in device fabrication processes, have one between mask plate and the pattern of substrate to aim at and fixation problem, this aligning and fixing general needs just can complete by special equipment, operating procedure is more loaded down with trivial details simultaneously, and alignment precision and repeatability also all have problems.
Summary of the invention
The object of this invention is to provide a kind of manufacture method and producing device of plane thin film thermoelectric device, to improve the make efficiency of plane thin film thermoelectric device.
For achieving the above object, according to an aspect of the present invention, provide a kind of manufacture method of plane thin film thermoelectric device, this manufacture method comprises: step one: make hollowed-out mask plate, substrate for limiting at least part of pattern of described plane thin film thermoelectric device, and is fixed on substrate bracket by the pierced pattern of this hollowed-out mask plate; Step 2: at least a set of location hole that forming position is relative respectively on described substrate bracket with hollowed-out mask plate, often overlap described location hole and comprise at least three location holes, by placement positioning ball on described location hole with by described hollowed-out mask plate compartment of terrain location and installation on described substrate bracket; Step 3: described substrate bracket and hollowed-out mask plate clamping are fixed, utilize physical gas phase deposition technology and through described hollowed-out mask plate complete over the substrate the pierced pattern of this hollowed-out mask plate deposition make.
Preferably, described hollowed-out mask plate for the formation of the pattern of described plane thin film thermoelectric device is polylith, and described manufacture method also comprises: step 4: change described hollowed-out mask plate and locate, and/or will the described hollowed-out mask plate dismounting clamping of deposition making be completed and reorientate behind shift position, repeat step 3, until the deposition completing the whole pattern of described thin film thermoelectric device makes.
Preferably, in step 2, described substrate bracket or hollowed-out mask plate are formed with the described location hole of many covers, often cover comprises at least three measure-alike described location holes, and the size of the described location hole of each cover is different, thus by the detent ball of corresponding size by described hollowed-out mask plate location and installation on described substrate bracket to adapt to the described substrate of different-thickness.Location hole can be all kinds and shape, such as square hole, circular hole, through hole or blind hole etc.
Preferably, described plane thin film thermoelectric device comprises the identical multiple P type thermoelectric arm of shape and N-type thermoelectric arm, the plurality of P type thermoelectric arm and N-type thermoelectric arm are parallel to each other and equally spaced alternately arrangement, described manufacture method comprises: in step one, makes one block of thermoelectric arm hollowed-out mask plate to limit the pattern of described P type thermoelectric arm or N-type thermoelectric arm; Also can make one block of hollowed-out mask plate in addition to limit the pattern of connecting electrode (containing terminals).In step 2, described substrate bracket or described one block of thermoelectric arm hollowed-out mask plate are formed two cover location holes, this two covers location hole is arranged along the arragement direction interval of described P type thermoelectric arm and N-type thermoelectric arm, and this interval is identical with the interval of adjacent described P type thermoelectric arm and N-type thermoelectric arm; Or, described substrate bracket and described one block of thermoelectric arm hollowed-out mask plate form two cover location holes respectively, the described location hole of two covers in the wherein one of described substrate bracket and described one block of thermoelectric arm hollowed-out mask plate is arranged along the arragement direction interval of described P type thermoelectric arm and N-type thermoelectric arm, and when the interval of this interval and adjacent described P type thermoelectric arm and N-type thermoelectric arm is identical, the described location hole of two covers in the wherein another one of described substrate bracket and described one block of thermoelectric arm hollowed-out mask plate along described P type thermoelectric arm and N-type thermoelectric arm arragement direction be spaced apart zero; In step 3, by described thermoelectric arm hollowed-out mask plate with a set of location hole location and installation in described two cover location holes, and in step 4, described thermoelectric arm hollowed-out mask plate is dismantled clamping and behind shift position, reorientates with another set of location hole.After the making completing P type thermoelectric arm and N-type thermoelectric arm, the hollowed-out mask plate of replaceable restriction connecting electrode (containing terminals) pattern is also located.
Preferably, described plane thin film thermoelectric device comprises the identical multiple P type thermoelectric arm of shape and N-type thermoelectric arm, the plurality of P type thermoelectric arm and N-type thermoelectric arm along the circumferential direction alternately angularly interval arrange and radially disperse, described manufacture method comprises: in step one, makes one block of thermoelectric arm hollowed-out mask plate to limit the pattern of described P type thermoelectric arm or N-type thermoelectric arm; In step 2, described substrate bracket or described one block of thermoelectric arm hollowed-out mask plate form two cover location holes, this two covers location hole is arranged along described circumferencial direction interval, and this interval angles is identical with the interval angles of N-type thermoelectric arm with adjacent described P type thermoelectric arm; Or, described substrate bracket and described one block of thermoelectric arm hollowed-out mask plate form two cover location holes respectively, the described location hole of two covers in the wherein one of described substrate bracket and described one block of thermoelectric arm hollowed-out mask plate is arranged along described circumferencial direction interval, when this interval angles is identical with the interval angles of N-type thermoelectric arm with adjacent described P type thermoelectric arm, the described location hole of two covers in the wherein another one of described substrate bracket and described one block of thermoelectric arm hollowed-out mask plate is zero along the interval angles of described circumferencial direction; In step 3, by described hollowed-out mask plate with a set of location hole location and installation in described two cover location holes, and in step 4, described hollowed-out mask plate is dismantled clamping and behind shift position, reorientates with another set of location hole.After the making completing P type thermoelectric arm and N-type thermoelectric arm, change the hollowed-out mask plate of restriction connecting electrode (containing terminals) pattern and locate.
Preferably, fixed head is installed additional in the surrounding of described hollowed-out mask plate.
Preferably, in step 3, described substrate bracket and hollowed-out mask plate are fixed between upper clamping plate and lower clamping plate by securing member clamping, the substrate bracket being fixed with described substrate is placed on lower clamping plate, and described upper clamping plate is provided with opening to expose described substrate.
Preferably, on described upper clamping plate and lower clamping plate, correspondence is provided with multiple installing hole, and the plurality of installing hole is arranged around the described substrate be placed on described lower clamping plate, described securing member through described installing hole with fastening described upper clamping plate and lower clamping plate.
Preferably, the material of described substrate and hollowed-out mask plate is metal, insulator or semiconductor.
Preferably, described physical gas phase deposition technology is molecular beam epitaxy deposition technology, sputter-deposition technology, pulsed laser deposition technique, electron-beam evaporation technology or thermal evaporation deposition technology.
Preferably, this manufacture method also comprises step 5: the described plane thin film thermoelectric device completing deposition making is being carried out annealing in process in vacuum or inert atmosphere.
According to a further aspect in the invention, provide a kind of producing device of plane thin film thermoelectric device, this producing device comprises substrate, substrate bracket, polylith hollowed-out mask plate and clamping mechanism, described substrate is fixed on described substrate bracket, and the pierced pattern of described hollowed-out mask plate is for limiting at least part of pattern of described plane thin film thermoelectric device; Wherein, described substrate bracket and at least a set of location hole that on hollowed-out mask plate, forming position is relative respectively, often overlap described location hole and comprise at least three location holes, to pass through on described location hole, placement positioning ball is by described hollowed-out mask plate compartment of terrain location and installation on described substrate bracket, and described clamping mechanism is used for clamping and fixes described substrate bracket and hollowed-out mask plate.
Preferably, described substrate bracket and/or described hollowed-out mask plate are formed spaced overlap location hole more.
Preferably, described many cover location holes are two covers, and the size of each cover location hole in this two covers location hole is different.
Preferably, described many cover location holes are two covers, this two covers location hole along the circumferential direction angularly interval setting.
Preferably, the surrounding of described hollowed-out mask plate adds fixed head.
Preferably, described clamping mechanism comprises clamping plate and lower clamping plate, and the substrate bracket being fixed with described substrate is placed on lower clamping plate, and described upper clamping plate is provided with opening to expose described substrate.
Preferably, on described upper clamping plate and lower clamping plate, correspondence is provided with multiple installing hole, and the plurality of installing hole is arranged around the described substrate be placed on described lower clamping plate, described securing member through described installing hole with fastening described upper clamping plate and lower clamping plate.
Pass through technique scheme, in the manufacture method of membrane according to the invention thermoelectric device and producing device, the graphical of thermoelectric device is realized by hollowed-out mask plate, by with various physical vapour deposition (PVD) masking technique with the use of the pattern to form thermoelectric device, and the pattern for given shape can also adopt several blocks of hollowed-out mask plates of simplification to realize, efficient and convenient.Especially make use of ball and located hollowed-out mask plate and aiming at and location between substrate, make to make location and aim at accurately, convenient operation, thus the make efficiency greatly improving thermoelectric device.
Other features and advantages of the present invention are described in detail in embodiment part subsequently.
Accompanying drawing explanation
Accompanying drawing is used to provide a further understanding of the present invention, and forms a part for specification, is used from explanation the present invention, but is not construed as limiting the invention with embodiment one below.In the accompanying drawings:
Fig. 1 is a kind of plane thin film thermoelectric device schematic diagram, and wherein all thermoelectric arms are all arranged in parallel, and the position often organizing P type and N-type thermoelectric arm in thermocouple unit all differs a translational movement dx, and width and the length of thermoelectric arm are represented by W and L respectively;
Fig. 2 is the schematic diagram of another kind of plane thin film thermoelectric device, and wherein thermoelectric arm is around a center of circle, radially arrange, and wherein often the angle organized in thermocouple unit between N-type and P type thermoelectric arm is θ;
Fig. 3 be another kind of thermoelectric arm around a center of circle, radially arrange, the schematic diagram of the plane thin film thermoelectric device of two electrode structures;
Fig. 4 is between polylith hollowed-out mask plate and hollowed-out mask plate and the schematic diagram aimed between substrate;
Fig. 5 illustrates placement positioning steel ball in the location hole of substrate bracket, substrate bracket has secured the situation of substrate;
Fig. 6 illustrates and is placed on steel ball by the hollowed-out mask plate of definition P type thermoelectric arm, moves mask plate 7 a little, makes steel ball to snap on mask plate in corresponding location hole, completes and aim at and locate;
Fig. 7 is the end view completing substrate bracket and the hollowed-out mask plate assembly aimed at and locate;
Fig. 8 illustrates and is clamped by the assembly fixture of substrate bracket and hollowed-out mask plate, and uses securing member stationary fixture;
Fig. 9 illustrates and is placed on steel ball by the hollowed-out mask plate of definition N-type thermoelectric arm, moves mask plate a little, makes steel ball to snap on mask plate in corresponding location hole, completes and aim at and locate;
Figure 10 illustrates and is placed on positioning ball by the hollowed-out mask plate of definition connecting electrode (containing terminals), moves mask plate a little, steel ball is snapped in location hole corresponding to mask plate, completes aligning;
Figure 11 illustrates the location hole making many cover different sizes on hollowed-out mask plate and substrate bracket, and the positioning ball of different-diameter with the use of, the gap between hollowed-out mask plate and substrate bracket can be changed, to hold the substrate of different-thickness; Three cover location holes on hollowed-out mask plate and substrate bracket are respectively illustrated in figure, wherein location hole A, B, C is positioned on substrate bracket, location hole A ', B ', C ' are positioned on hollowed-out mask plate, location hole A, B, C respectively with location hole A ', B ', C ' with the use of; The size of the location hole in figure does not represent full-size(d), and for clarity sake, this figure does not show the gusset plate 12 of mask plate;
Figure 12 a and Figure 12 b respectively illustrates and make the second cover location hole relative to first set location hole on substrate bracket and hollowed-out mask plate, two cover location holes on substrate bracket are respectively first set location hole (X=A, B, C) and the second cover location hole (XX=AA, BB, CC), the second cover location hole has a displacement relative to first set location hole, and the component of this displacement on thermoelectric arm translation direction (as shown in FIG. X-direction) is dx; Two cover location holes on thermoelectric arm hollowed-out mask plate are first set location hole (X '=A ', B ', C ') and second cover location hole (XX '=AA ', BB ', CC '), the second cover location hole is zero relative to the component of displacement on thermoelectric arm translation direction (as shown in FIG. X-direction) of first set location hole;
Figure 13 illustrates first set location hole (as B group) place steel ball being positioned over substrate bracket, matches, complete aligning with the B ' group of the first set location hole on hollowed-out mask plate, to deposit P type (N-type) thermoelectric arm;
Figure 14 illustrates the second cover location hole (as BB group) place steel ball being positioned over substrate bracket, and the BB ' group of overlap location hole with second on hollowed-out mask plate matches, complete aim at, with deposited n-type (P type) thermoelectric arm; For clarity sake, the fixed head of mask plate is not shown in figure;
Figure 15 a and Figure 15 b respectively illustrates on substrate bracket and hollowed-out mask plate makes the second cover location hole relative to first set location hole, two cover location holes on substrate bracket are respectively first set location hole A and second cover location hole AA, between the second cover location hole AA and the center of circle O line and between first set location hole and O the angle of line be θ; Two cover location holes on thermoelectric arm hollowed-out mask plate are respectively first set location hole A ' and second cover location hole AA ', between the second cover location hole AA ' and center of circle O ' line and between first set location hole and O ' angle of line be zero; And
Figure 16 be in a preferred embodiment of the invention for thermal evaporation with the use of the structural representation of clamping mechanism (fixture).
description of reference numerals
1 substrate 2 P type thermoelectric arm
3 N-type thermoelectric arm 4 connecting electrodes
5 terminals 6 substrate brackets
The mask plate of the mask plate 8 N-type thermoelectric arm of 7 P type thermoelectric arms
Mask plate 10 location hole of 9 connecting electrodes (containing terminals)
11 detent ball 12 fixed heads
Clamping plate 14 times clamping plates on 13
Installing hole on 15 securing members 16
17 times installing hole dx, dy translational movements
The 18 substrate θ angles having deposited P type thermoelectric arm
19 have deposited P type and N-type thermoelectric arm substrate O, O ' center of circle
W thermoelectric arm width L thermoelectric arm length
Location hole--------A, B, C; A ', B ', C ';
-------- AA、BB、CC； AA′、BB′、CC′
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.Should be understood that, embodiment described herein, only for instruction and explanation of the present invention, is not limited to the present invention.
In the present invention, when not doing contrary explanation, the noun of locality of use as " upper and lower, top, the end " normally for direction shown in the drawings or for each parts mutual alignment relationship description word vertically, on vertical or gravity direction.
As shown in Fig. 4 to Fig. 8, the invention provides a kind of producing device of plane thin film thermoelectric device, this producing device comprises substrate 1, substrate bracket 6, polylith hollowed-out mask plate 7,8,9 and clamping mechanism, substrate 1 is fixed on substrate bracket 6, and the pierced pattern of hollowed-out mask plate 7,8,9 is for limiting at least part of pattern of thin film thermoelectric device.Wherein, substrate bracket 6 and at least a set of location hole 10 that on hollowed-out mask plate 7,8,9, forming position is relative respectively, often overlap location hole and comprise at least three location holes 10, to pass through on location hole 10, placement positioning ball 11 is by hollowed-out mask plate 7,8,9 compartment of terrain location and installation on substrate bracket 6, and clamping mechanism is used for clamping stationary substrate holder 6 and hollowed-out mask plate 7,8,9.The present invention be intended to by hollowed-out mask plate and bond physical vapor deposition masking technique to coordinate the pattern forming plane thin film thermoelectric device, thus improve make efficiency.Therefore, respective design polylith hollowed-out mask plate and substrate bracket in producing device, and for the two clamping being fixed so that bond physical vapor deposition masking technique carries out element manufacturing.Hollowed-out mask plate 7,8,9 wherein can limit the pattern of whole thermoelectric device whole or in part, such as one block of thermoelectric arm hollowed-out mask plate only limits N-type thermoelectric arm wherein, and another block thermoelectric arm hollowed-out mask plate limits P type thermoelectric arm etc. wherein, combinationally use to form whole pattern.
Ball locate mode is preferably adopted in producing device of the present invention.Namely as shown in Figure 4 and Figure 5, substrate bracket 6 and hollowed-out mask plate 7,8,9 are formed spaced many cover location holes 10 respectively, after placing the ball of corresponding size in location hole, substrate bracket and hollowed-out mask plate compartment of terrain location and installation can be made, as shown in Figure 7.Wherein, many cover location holes 10 can be two covers, and the size of each cover location hole 10 in this two covers location hole is different, thus when substrate thickness is different, adopts the ball of different size to locate, to adapt to this substrate thickness.For the thermoelectric device of pattern shown in Fig. 1, arrange after two cover location holes are also used in and have made N-type thermoelectric arm with same thermoelectric arm hollowed-out mask plate, utilize another set of location hole to locate and make P type thermoelectric arm.For the thermoelectric device of pattern shown in Fig. 2, two cover location holes can along the circumferential direction angularly interval arrange, the location equally conveniently by two cover location holes to complete the thermoelectric arm of whole thermoelectric device to realize utilizing one block of thermoelectric arm hollowed-out mask plate.Below will be described in detail pointedly.
In addition, as shown in Figure 6, the surrounding of hollowed-out mask plate 7,8,9 can add fixed head 12.Fixed head 12 is for reinforcing hollowed-out mask plate and location convenient for assembly.In addition, Fig. 8 exemplarily lists a kind of above-mentioned clamping mechanism, and it comprises clamping plate 13 and lower clamping plate 14, and the substrate bracket 6 being fixed with substrate 1 is placed on lower clamping plate 14, and upper clamping plate 13 is provided with opening to expose substrate 1.Wherein, on upper clamping plate 13 and lower clamping plate 14, correspondence is provided with multiple installing hole 16,17, the plurality of installing hole 16,17 is arranged around the substrate 1 be placed on lower clamping plate 14, and securing member 15 passes installing hole 16,17 with fastening upper clamping plate 13 and lower clamping plate 14.Until hollowed-out mask plate and substrate alignment and clamping fixing after, then physical vapour deposition (PVD) masking technique can be utilized to carry out element manufacturing.
In the design basis of the producing device of above-mentioned thin film thermoelectric device, below in conjunction with accompanying drawing to introduce the manufacture method of membrane according to the invention thermoelectric device in detail.
1) first design substrate holder 6 and polylith hollowed-out mask plate, as shown in Figure 4, i.e. substrate bracket 6, P type thermoelectric arm mask plate 7, N-type thermoelectric arm mask plate 8 and connecting electrode (containing terminals) mask plate 9, substrate bracket 6 is used for fixing substrate 1, every block hollowed-out mask plate designs one group of hollow out figure, be used for respectively defining P type thermoelectric arm, the shape of N-type thermoelectric arm and connecting electrode (containing terminals), on substrate bracket 6 and each block of hollowed-out mask plate, be manufactured with location hole 10 simultaneously.After the position alignment of location hole 10, the figure on each hollowed-out mask plate also just targeted by mutually, and meanwhile, the figure of each block of hollowed-out mask plate also just determines relative to the position of substrate simultaneously.
2) in the location hole 10 of a set of same size of substrate bracket, the ball (such as steel ball) of a set of same diameter is put into, as shown in Figure 5.Again the hollowed-out mask plate 7 of definition P type thermoelectric arm is placed on steel ball, the periphery of hollowed-out mask plate fixes gusset plate 12 as shown in Figure 6, move mask plate 7 a little, steel ball is made to snap on mask plate in corresponding location hole 10, complete and aim at and location, what Fig. 7 showed is that hollowed-out mask plate completes the end view after aiming at location.
3) substrate bracket-hollowed-out mask plate assembly clamping plate 13 and lower clamping plate 14 that complete aligning location are fixed, upper clamping plate 13 and lower clamping plate 14 arrange installing hole 16 and lower installing hole 17 respectively, the two is made to align and use securing member 15 to tighten, as shown in Figure 8.
4) utilize physical gas phase deposition technology on substrate, first deposit P type thermoelectric arm.
5) after completing the deposition of P type thermoelectric arm, remove clamping plate 13 and lower clamping plate 14, and the hollowed-out mask plate 7 of definition P type thermoelectric arm, when not changing the position of substrate (namely having deposited the substrate 18 of P type thermoelectric arm), as shown in Figure 9, the hollowed-out mask plate 8 of definition N-type thermoelectric arm is placed on steel ball, moves mask plate 8 a little, make steel ball to snap on this mask plate in corresponding location hole, complete aligning.
6) substrate bracket-hollowed-out mask plate assembly completing aligning is fixed with fixture again, and the securing members such as tighten the screws.
7) utilize physical gas phase deposition technology at deposited on substrates N-type thermoelectric arm.
8) after completing the deposition of N-type thermoelectric arm, remove fixture, and the hollowed-out mask plate 8 of definition N-type thermoelectric arm, when not changing the position of substrate (namely having deposited the substrate 19 of P type and N-type thermoelectric arm), the hollowed-out mask plate 9 defining connecting electrode (containing terminals) is placed in and aims on steel ball (Figure 10), move mask plate a little, steel ball is snapped in location hole corresponding to mask plate, completes aligning.
9) substrate bracket-hollowed-out mask plate assembly fixture completing aligning is fixed, and the securing members such as tighten the screws.
10) physical gas phase deposition technology deposited barrier layer and metal connecting electrode (containing terminals) is utilized.Barrier layer is used for stoping the metallic atom forming electrode to diffuse into thermoelectric arm, thus causes the reduction of thin film thermoelectric performance.
11) annealing in process is carried out to device.
Wherein, the number of above-mentioned used positioning ball is preferably more than three or three, to complete location and to fix, is more preferably four.
Preferably, see Fig. 7, substrate bracket and hollowed-out mask plate make the location hole 10 of a set of above different size, to combinationally use with the steel ball of aiming at of different-diameter, change the gap between hollowed-out mask plate 7 and substrate bracket 6, to hold the substrate 1 of different-thickness.Three cover location holes on hollowed-out mask plate and substrate bracket are respectively illustrated in Figure 11, often overlap the location hole that location hole comprises four formed objects, wherein location hole A, B, C is positioned on substrate bracket, location hole A ', B ', C ' are positioned on hollowed-out mask plate, location hole A, B, C respectively with location hole A ', B ', C ' with the use of.Wherein, hollowed-out mask plate and substrate bracket can adopt metal (as stainless steel), insulating material or semi-conducting material (as monocrystalline silicon piece) to make.The surrounding of hollowed-out mask plate can be reinforced with gusset plate, to increase the intensity of hollowed-out mask plate.
After substrate bracket and hollowed-out mask plate complete aligning and location, the assembly of substrate bracket-hollowed-out mask plate is fixed by available mechanical fixture.
Preferably, the manufacturing process of device comprises the deposition of P type thermoelectric arm successively, and N-type thermoelectric arm deposits, the deposition of the deposition on barrier layer and connecting electrode (containing terminals).Also can comprise following process successively: the deposition of connecting electrode (containing terminals), the deposition on barrier layer, the deposition of P type thermoelectric arm, N-type thermoelectric arm deposits.After deposition makes, device needs annealing in process in vacuum or inert atmosphere.
As shown in Figure 1, when all thermoelectric arms of device are all parallel and the position often organizing P type and N-type thermoelectric arm in thermocouple unit all differs a translational movement dx, two blocks of hollowed-out mask plates of definition P type and N-type thermoelectric arm can be merged into one block of thermoelectric arm hollowed-out mask plate, now need on substrate bracket and hollowed-out mask plate, make two cover location holes.Figure 12 a and Figure 12 b shows two such cover location holes, exemplarily, often overlap location hole to be all made up of the location hole of three cover different sizes again, wherein, two cover location holes on substrate bracket are respectively first set location hole (X=A, B, C) and the second cover location hole (XX=AA, BB, CC), second cover location hole has a displacement relative to first set location hole, and the component of this displacement on thermoelectric arm translation direction (in as Figure 12 a and Figure 12 b X-direction) is dx, is being dy perpendicular to the component in this direction (in as Figure 12 a and Figure 12 b Y-direction); On thermoelectric arm hollowed-out mask plate, also location hole is overlapped in corresponding making two, comprise first set location hole (X '=A ', B ', C ') and second cover location hole (XX '=AA ', BB ', CC '), the second cover location hole is zero relative to the component of displacement on thermoelectric arm translation direction (in as Figure 12 a and Figure 12 b X-direction) of first set location hole, is being dy perpendicular to the component in this direction (in as Figure 12 a and Figure 12 b Y-direction).
When for depositing P type and N-type thermoelectric arm, need with the use of location hole X, X ', XX and XX ', such as in order to deposit P type thermoelectric arm, the B first steel ball being positioned over substrate bracket overlaps location hole place, thermoelectric arm hollowed-out mask plate is placed on steel ball, in the B ' cover location hole that steel ball is snapped on mask plate, completes aligning.After (see Figure 13) completes the deposition of P type thermoelectric arm by the time, aligning steel ball is positioned over the BB ' cover location hole place of substrate bracket, thermoelectric arm hollowed-out mask plate is placed on steel ball, in the BB ' cover location hole that steel ball is snapped on mask plate, complete aligning, then carry out the deposition of N-type thermoelectric arm.(see Figure 14)
When all thermoelectric arms of device as shown in Figure 2 all radially distribute round a center of circle O, and time often the angle organized in thermocouple unit between P type and N-type thermoelectric arm is all θ, the hollowed-out mask plate of definition P type and N-type thermoelectric arm can be merged into a mask plates, now need centered by O and O ' of the center of circle, to make two cover location holes respectively on substrate bracket and hollowed-out mask plate, as shown in Figure 15 a and Figure 15 b, two cover location holes on substrate bracket are respectively first set location hole A and second cover location hole AA, between second cover location hole AA and O, between line and first set location hole A and O, the angle of line is θ, the difference of the spacing of Distance geometry first set location hole A and the O between the second cover location hole AA and O is dR, thermoelectric arm hollowed-out mask plate also makes two cover location holes, comprise first set location hole A ' and second cover location hole AA ', between second cover location hole AA ' and O ', between line and first set location hole A ' and O ', the angle of line is the zero, second Distance geometry first set location hole A ' overlapped between location hole AA ' and O ' is dR with the difference of the spacing of O.
When depositing P type thermoelectric arm, supposing that A steel ball being positioned over substrate bracket overlaps location hole place, thermoelectric arm hollowed-out mask plate being placed on steel ball, in the A ' cover location hole that steel ball is snapped on mask plate, completing aligning.By the time after completing the deposition of P type thermoelectric arm, the AA that aligning steel ball is positioned over substrate bracket is overlapped location hole place, thermoelectric arm hollowed-out mask plate is placed on steel ball, in the AA ' cover location hole that steel ball is snapped on mask plate, complete aligning, then carry out the deposition of N-type thermoelectric arm.
Introduce the preferred implementation according to the manufacture method of a kind of thin film thermoelectric device of the present invention below in detail, to adopt above-mentioned autoregistration hollowed-out mask plate technique, magnetic control spatters establishes technology and metal fever evaporation technique, makes a plane thin film thermoelectric device on a glass substrate.
The structure of this thermoelectric device as shown in Figure 1, it is made up of 20 pairs of P types and N-type thermoelectric arm, N-type arm and P arm are deposited by magnetically controlled sputter method respectively, and the equipment used is the ACS-4000-C4 magnetic control sputtering device of Japanese ULVAC company, and wherein the proportioning of P type semiconductor target is Bi
0.5sb
1.5te
3the Te of additional about 4wt%, the proportioning of N type semiconductor target is Bi
2te
2.7se
0.3.
1) first make substrate bracket and two blocks of hollowed-out mask plates, they adopt stainless steel material processing and fabricating, and the periphery of hollowed-out mask plate is fixed with fixed head 12 by spot welding.Wherein, substrate bracket and thermoelectric arm mask plate are manufactured with first set and the second cover location hole respectively, (diameter is respectively 0.97mm often to overlap in location hole the location hole containing again three cover different-diameters, 0.99mm and 0.95mm), like this can by a mask plates deposition P type and N-type thermoelectric arm, it is 100 μm that this template is used for the width of the perforate defining thermoelectric arm; Separately there is one piece of mask plate as shown in Figure 10, be used for deposition connecting electrode (containing terminals), compared with thermoelectric arm mask plate, above it, be only manufactured with first set location hole (X=A ', B ', C ').
2) stickup of the blank glass sheet substrate of 22mm × 35mm × 0.16mm size is fixed on substrate bracket, the diameter of steel ball and location hole is selected according to the thickness of substrate, reduce the distance of hollowed-out mask plate and substrate surface as far as possible, to reduce the broadening of figure in deposition process, but be limited together with not encountering with substrate with mask plate, to avoid damaging the figure that substrate will deposit.Choose four steel balls are placed on certain cover determined (as B cover) first set location hole place (Figure 13) on substrate bracket, again the hollowed-out mask plate of definition thermoelectric arm is placed on steel ball, move mask plate a little, make steel ball to snap on mask plate in corresponding first set location hole (as B ' cover), complete and aim at and location (Figure 13).
3) fixture shown in the substrate bracket-hollowed-out mask plate assembly Fig. 8 completing aligning is fixed, and the securing members such as tighten the screws.
4) magnetically controlled sputter method first deposited n-type thermoelectric arm on substrate is utilized.Before deposition, cavity background pressure is 1.0 × 10
-4pa, during deposition, substrate does not heat, and high-purity argon gas flow is 25sccm, adopt the power of radio frequency (RF) power supply to be 40W, sedimentation time is 3600s, and during sputtering, cavity background pressure is 1.8 × 10
-1pa.
5) after completing the deposition of N-type thermoelectric arm, remove fixture, and thermoelectric arm hollowed-out mask plate, steel ball is placed on substrate bracket corresponding second cover location hole on (as used B overlap in step 2, now then use BB cover location hole, other is analogized), again thermoelectric arm hollowed-out mask plate is placed on steel ball, move mask plate a little, make steel ball snap in corresponding second cover location hole (as BB ' cover) on mask plate, complete and aim at and location (Figure 14).。
6) substrate bracket-hollowed-out mask plate assembly fixture completing aligning is fixed, and the securing members such as tighten the screws.
7) utilize magnetically controlled sputter method at deposited on substrates P type thermoelectric arm.Before deposition, cavity background pressure is 1.9 × 10
-4pa, during deposition, substrate does not heat, and high-purity argon gas flow is 25sccm, adopt the power of radio frequency (RF) power supply to be 50W, sedimentation time is 4800s, and during sputtering, cavity background pressure is 1.8 × 10
-1pa.
8) after completing the deposition of P type thermoelectric arm, remove fixture, and thermoelectric arm hollowed-out mask plate, aligning steel ball is reapposed on the first set location hole (as B cover) on substrate bracket, again the hollowed-out mask plate defining connecting electrode (containing terminals) is placed on steel ball, move mask plate a little, make steel ball to snap on mask plate on corresponding location hole (as B ' cover), complete aligning.
9) fixture shown in the substrate bracket-hollowed-out mask plate assembly Figure 16 completing aligning is fixed, and the securing members such as tighten the screws.
10) utilize metal fever evaporating device de-posited chromium layer and layer gold, to make connecting electrode and terminals, use equipment to be BeiJing ZhongKe's tech SBC-2 type metal coating machine.
11) under 200 DEG C of conditions, the annealing in process that reducibility gas (containing the hydrogen of 10% and the argon gas of 90%) carries out device 1 hour is used.
Below the preferred embodiment of the present invention is described in detail by reference to the accompanying drawings; but; the present invention is not limited to the detail in above-mentioned execution mode; within the scope of technical conceive of the present invention; can carry out multiple simple variant to technical scheme of the present invention, these simple variant all belong to protection scope of the present invention.
It should be noted that in addition, each concrete technical characteristic described in above-mentioned embodiment, in reconcilable situation, can be combined by any suitable mode, in order to avoid unnecessary repetition, the present invention illustrates no longer separately to various possible compound mode.
In addition, also can carry out combination in any between various different execution mode of the present invention, as long as it is without prejudice to thought of the present invention, it should be considered as content disclosed in this invention equally.
Claims (18)
1. a manufacture method for plane thin film thermoelectric device, is characterized in that, this manufacture method comprises:
Step one: make hollowed-out mask plate (7,8,9), substrate (1) for limiting at least part of pattern of described plane thin film thermoelectric device, and is fixed on substrate bracket (6) by the pierced pattern of this hollowed-out mask plate;
Step 2: the upper at least a set of location hole (10) that forming position is relative respectively of described substrate bracket (1) and hollowed-out mask plate (7,8,9), often overlap described location hole and comprise at least three location holes (10), by the upper placement positioning ball (11) of described location hole (10) with by described hollowed-out mask plate (7,8,9) compartment of terrain location and installation on described substrate bracket (6);
Step 3: described substrate bracket (6) and hollowed-out mask plate (7,8,9) clamping are fixed, utilize physical gas phase deposition technology and complete on described substrate (1) through described hollowed-out mask plate (7,8,9) pierced pattern of this hollowed-out mask plate (7,8,9) deposition make.
2. the manufacture method of plane thin film thermoelectric device according to claim 1, is characterized in that, the described hollowed-out mask plate (7,8,9) for the formation of the pattern of described plane thin film thermoelectric device is polylith, and described manufacture method also comprises:
Step 4: change described hollowed-out mask plate (7,8,9) and locate, and/or will described hollowed-out mask plate (7,8,9) the dismounting clamping of deposition making be completed and reorientate behind shift position, repeat step 3, until the deposition completing the whole pattern of described thin film thermoelectric device makes.
3. the manufacture method of plane thin film thermoelectric device according to claim 2, it is characterized in that, in step 2, described substrate bracket (6) or hollowed-out mask plate (7,8,9) are formed with the described location hole of many covers (10), often cover comprises at least three measure-alike described location holes (10), and the size of the described location hole of each cover (10) is different, thus by the detent ball (11) of corresponding size by described hollowed-out mask plate (7,8,9) location and installation on described substrate bracket (6) to adapt to the described substrate (1) of different-thickness.
4. the manufacture method of plane thin film thermoelectric device according to claim 2, it is characterized in that, described plane thin film thermoelectric device comprises the identical multiple P type thermoelectric arm of shape and N-type thermoelectric arm, the plurality of P type thermoelectric arm and N-type thermoelectric arm are parallel to each other and equally spaced alternately arrangement, and described manufacture method comprises:
In step one, make one piece of thermoelectric arm hollowed-out mask plate (7) to limit the pattern of described P type thermoelectric arm or N-type thermoelectric arm;
In step 2, location hole (10) is overlapped at described substrate bracket (6) or the upper formation two of described one piece of thermoelectric arm hollowed-out mask plate (7), this two covers location hole is arranged along the arragement direction interval of described P type thermoelectric arm and N-type thermoelectric arm, and this interval is identical with the interval of adjacent described P type thermoelectric arm and N-type thermoelectric arm, or, described substrate bracket (6) and described one piece of thermoelectric arm hollowed-out mask plate (7) form two cover location holes (10) respectively, the two described location hole of covers (10) in the wherein one of described substrate bracket (6) and described one piece of thermoelectric arm hollowed-out mask plate (7) are arranged along the arragement direction interval of described P type thermoelectric arm and N-type thermoelectric arm, and when the interval of this interval and adjacent described P type thermoelectric arm and N-type thermoelectric arm is identical, the two described location hole of covers (10) in the wherein another one of described substrate bracket (6) and described one piece of thermoelectric arm hollowed-out mask plate (7) along described P type thermoelectric arm and N-type thermoelectric arm arragement direction be spaced apart zero,
In step 3, by described thermoelectric arm hollowed-out mask plate (7) with a set of location hole (10) location and installation in described two cover location holes, and in step 4, described hollowed-out mask plate (7) is dismantled clamping and behind shift position, reorientates with another set of location hole (10).
5. the manufacture method of plane thin film thermoelectric device according to claim 2, it is characterized in that, described plane thin film thermoelectric device comprises the identical multiple P type thermoelectric arm of shape and N-type thermoelectric arm, the plurality of P type thermoelectric arm and N-type thermoelectric arm along the circumferential direction alternately angularly interval arrange and radially disperse, described manufacture method comprises:
In step one, make one piece of thermoelectric arm hollowed-out mask plate (7) to limit the pattern of described P type thermoelectric arm or N-type thermoelectric arm;
In step 2, location hole (10) is overlapped at described substrate bracket (6) or the upper formation two of described one piece of thermoelectric arm hollowed-out mask plate (7), this two covers location hole is arranged along described circumferencial direction interval, and this interval angles is identical with the interval angles of N-type thermoelectric arm with adjacent described P type thermoelectric arm, or, described substrate bracket (6) and described one piece of thermoelectric arm hollowed-out mask plate (7) form two cover location holes (10) respectively, the two described location hole of covers (10) in the wherein one of described substrate bracket (6) and described one piece of thermoelectric arm hollowed-out mask plate (7) are arranged along described circumferencial direction interval, when this interval angles is identical with the interval angles of N-type thermoelectric arm with adjacent described P type thermoelectric arm, the two described location hole of covers (10) in the wherein another one of described substrate bracket (6) and described one piece of thermoelectric arm hollowed-out mask plate (7) are zero along the interval angles of described circumferencial direction,
In step 3, described hollowed-out mask plate (7) is installed with a set of location hole location (10) in described two cover location holes, and in step 4, described hollowed-out mask plate (7) is dismantled clamping and behind shift position, reorientates with another set of location hole (10).
6. the manufacture method of plane thin film thermoelectric device according to claim 2, is characterized in that, installs fixed head (12) additional in the surrounding of described hollowed-out mask plate (7,8,9).
7. the manufacture method of plane thin film thermoelectric device according to claim 2, it is characterized in that, in step 3, described substrate bracket (6) and hollowed-out mask plate (7,8,9) are fixed between upper clamping plate (13) and lower clamping plate (14) by securing member (15) clamping, the substrate bracket (6) being fixed with described substrate (1) is placed on lower clamping plate (14), and described upper clamping plate (13) is provided with opening to expose described substrate (1).
8. the manufacture method of plane thin film thermoelectric device according to claim 7, it is characterized in that, described upper clamping plate (13) and the upper correspondence of lower clamping plate (14) are provided with multiple installing hole (16,17), the plurality of installing hole (16,17) is arranged around the described substrate (1) that is placed on described lower clamping plate (14), described securing member (15) through described installing hole (16,17) with fastening described upper clamping plate (13) and lower clamping plate (14).
9. the manufacture method of plane thin film thermoelectric device according to claim 2, is characterized in that, the material of described substrate (1) and hollowed-out mask plate (7,8,9) is metal, insulator or semiconductor.
10. the manufacture method of plane thin film thermoelectric device according to claim 2, it is characterized in that, described physical gas phase deposition technology is molecular beam epitaxy deposition technology, sputter-deposition technology, pulsed laser deposition technique, electron-beam evaporation technology or thermal evaporation deposition technology.
11. according to the manufacture method of the plane thin film thermoelectric device in claim 2-10 described in any one, it is characterized in that, this manufacture method also comprises step 5: the described plane thin film thermoelectric device completing deposition making is being carried out annealing in process in vacuum or inert atmosphere.
The producing device of 12. 1 kinds of plane thin film thermoelectric device, it is characterized in that, this producing device comprises substrate (1), substrate bracket (6), polylith hollowed-out mask plate (7,8,9) and clamping mechanism, described substrate (1) is fixed on described substrate bracket (6), and the pierced pattern of described hollowed-out mask plate (7,8,9) is for limiting at least part of pattern of described plane thin film thermoelectric device;
Wherein, described substrate bracket (6) at least a set of location hole (10) that respectively forming position relative upper with hollowed-out mask plate (7,8,9), often overlap described location hole and comprise at least three location holes (10), to pass through at described location hole (10), above placement positioning ball (11) is by described hollowed-out mask plate (7,8,9) compartment of terrain location and installation on described substrate bracket (6), and described clamping mechanism is used for clamping and fixes described substrate bracket (6) and hollowed-out mask plate (7,8).
The producing device of 13. plane thin film thermoelectric device according to claim 12, is characterized in that, described substrate bracket (6) and/or described hollowed-out mask plate (7,8,9) is formed spacedly overlap location hole (10) more.
The producing device of 14. plane thin film thermoelectric device according to claim 13, is characterized in that, overlap location hole (10) described is two covers more, and the size of each cover location hole (10) in this two covers location hole is different.
The producing device of 15. plane thin film thermoelectric device according to claim 13, is characterized in that, overlap location hole (10) described is two covers more, this two covers location hole along the circumferential direction angularly interval setting.
The producing device of 16. plane thin film thermoelectric device according to claim 12, is characterized in that, the surrounding of described hollowed-out mask plate (7,8,9) adds fixed head (12).
The producing device of 17. plane thin film thermoelectric device according to claim 12, it is characterized in that, described clamping mechanism comprises clamping plate (13) and lower clamping plate (14), the substrate bracket (6) being fixed with described substrate (1) is placed on lower clamping plate (14), and described upper clamping plate (13) is provided with opening to expose described substrate (1).
The producing device of 18. plane thin film thermoelectric device according to claim 17, it is characterized in that, described upper clamping plate (13) and the upper correspondence of lower clamping plate (14) are provided with multiple installing hole (16,17), the plurality of installing hole (16,17) is arranged around the described substrate (1) that is placed on described lower clamping plate (14), described securing member (15) through described installing hole (16,17) with fastening described upper clamping plate (13) and lower clamping plate (14).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310337434.6A CN104347790B (en) | 2013-08-05 | 2013-08-05 | Manufacturing method and manufacturing device of planar thin-film thermoelectric device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310337434.6A CN104347790B (en) | 2013-08-05 | 2013-08-05 | Manufacturing method and manufacturing device of planar thin-film thermoelectric device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104347790A true CN104347790A (en) | 2015-02-11 |
| CN104347790B CN104347790B (en) | 2017-01-25 |
Family
ID=52502962
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310337434.6A Expired - Fee Related CN104347790B (en) | 2013-08-05 | 2013-08-05 | Manufacturing method and manufacturing device of planar thin-film thermoelectric device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104347790B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108878283A (en) * | 2018-06-05 | 2018-11-23 | 广东工业大学 | A kind of position and the controllable lithographic method of accurate size |
| TWI718731B (en) * | 2019-10-29 | 2021-02-11 | 國立中興大學 | Thermoelectric unit and power generation device with the thermoelectric unit and piezoelectric unit |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001234327A (en) * | 2000-02-18 | 2001-08-31 | Murata Mfg Co Ltd | Jig for sputtering |
| CN2915882Y (en) * | 2006-05-30 | 2007-06-27 | 南昌大学 | Rotary mask device for vacuum coating |
| CN101533887A (en) * | 2009-04-13 | 2009-09-16 | 瀚宇博德科技（江阴）有限公司 | Method for manufacturing thermoelectric cell of bottom board of printed circuit board and structure thereof |
| WO2013012842A1 (en) * | 2011-07-18 | 2013-01-24 | The Regents Of The University Of Michigan | Thermoelectric devices, systems and methods |
| CN103151452A (en) * | 2013-03-26 | 2013-06-12 | 中国航天科工集团第二研究院二〇三所 | Method for producing planar thermopile for thermometers |
-
2013
- 2013-08-05 CN CN201310337434.6A patent/CN104347790B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001234327A (en) * | 2000-02-18 | 2001-08-31 | Murata Mfg Co Ltd | Jig for sputtering |
| CN2915882Y (en) * | 2006-05-30 | 2007-06-27 | 南昌大学 | Rotary mask device for vacuum coating |
| CN101533887A (en) * | 2009-04-13 | 2009-09-16 | 瀚宇博德科技（江阴）有限公司 | Method for manufacturing thermoelectric cell of bottom board of printed circuit board and structure thereof |
| WO2013012842A1 (en) * | 2011-07-18 | 2013-01-24 | The Regents Of The University Of Michigan | Thermoelectric devices, systems and methods |
| CN103151452A (en) * | 2013-03-26 | 2013-06-12 | 中国航天科工集团第二研究院二〇三所 | Method for producing planar thermopile for thermometers |
Non-Patent Citations (1)
| Title |
|---|
| ANDREW J. GROSS ET AL.: ""Multistage Planar Thermoelectric Microcoolers"", 《JOURNAL OF MICROELECTROMECHANICAL SYSTEMS》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108878283A (en) * | 2018-06-05 | 2018-11-23 | 广东工业大学 | A kind of position and the controllable lithographic method of accurate size |
| TWI718731B (en) * | 2019-10-29 | 2021-02-11 | 國立中興大學 | Thermoelectric unit and power generation device with the thermoelectric unit and piezoelectric unit |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104347790B (en) | 2017-01-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR102660958B1 (en) | Ion injector electrode assembly for ion beam etching | |
| CN104347789A (en) | Method and device for manufacturing thermoelectric arm array of vertical-type thin-film thermoelectric device | |
| KR102418817B1 (en) | Vapor deposition mask, vapor deposition mask precursor, vapor deposition mask manufacturing method, and organic semiconductor element manufacturing method | |
| US10837111B2 (en) | Holding arrangement for supporting a substrate carrier and a mask carrier during layer deposition in a processing chamber, apparatus for depositing a layer on a substrate, and method for aligning a substrate carrier supporting a substrate and a mask carrier | |
| CN105779934B (en) | Method for manufacturing vapor deposition mask and method for manufacturing organic semiconductor element | |
| TWI494969B (en) | Method for coating a substrate and coater | |
| KR20130100325A (en) | Systems and methods for forming a layer of sputtered material | |
| TWI595106B (en) | Method for coating a substrate and coater | |
| CN105358732A (en) | Film-forming mask and method for producing film-forming mask | |
| KR20080044239A (en) | Holding apparatus, assembly system, sputtering apparatus, machining method and machining apparatus | |
| JP2018525529A (en) | Masking plate for small aperture deposition | |
| CN107829065B (en) | Opening mask plate, mother plate, preparation method of mother plate, substrate and display device | |
| US20110005924A1 (en) | Target backing tube, cylindrical target, and cylindrical target assembly | |
| US20160343994A1 (en) | Knockdown mask and manufacturing method thereof | |
| CN104347790A (en) | Manufacturing method and manufacturing device of planar thin-film thermoelectric device | |
| JP2019512042A (en) | Material deposition apparatus, vacuum deposition system and method therefor | |
| US20160115585A1 (en) | Apparatus for direct-write sputter deposition and method therefor | |
| JP5577758B2 (en) | Pattern forming method, pattern forming substrate, and solar cell element | |
| JP5892003B2 (en) | Semiconductor manufacturing apparatus and semiconductor device manufacturing method | |
| CN203878204U (en) | Device for enhancing film uniformity on sputtering system | |
| US9728382B2 (en) | Evaporation source | |
| CN107740042B (en) | Mask plate | |
| JP2011117028A (en) | Mask for vapor deposition | |
| TWI385265B (en) | Physical vapor deposition apparatus and method thereof | |
| JP2019533761A (en) | Mask apparatus for masking a substrate, apparatus for processing a substrate, and method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170125 Termination date: 20170805 |