CN108878283A - A kind of position and the controllable lithographic method of accurate size - Google Patents
A kind of position and the controllable lithographic method of accurate size Download PDFInfo
- Publication number
- CN108878283A CN108878283A CN201810569867.7A CN201810569867A CN108878283A CN 108878283 A CN108878283 A CN 108878283A CN 201810569867 A CN201810569867 A CN 201810569867A CN 108878283 A CN108878283 A CN 108878283A
- Authority
- CN
- China
- Prior art keywords
- etching
- template
- chip
- liquid pool
- controllable
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 31
- 238000005530 etching Methods 0.000 claims abstract description 102
- 239000007788 liquid Substances 0.000 claims abstract description 86
- 239000000463 material Substances 0.000 claims abstract description 24
- 150000001875 compounds Chemical class 0.000 claims abstract description 10
- 239000002356 single layer Substances 0.000 claims abstract description 10
- 238000004519 manufacturing process Methods 0.000 claims abstract description 9
- 238000002347 injection Methods 0.000 claims abstract description 4
- 239000007924 injection Substances 0.000 claims abstract description 4
- 239000000243 solution Substances 0.000 claims description 15
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- 230000007797 corrosion Effects 0.000 claims description 9
- 238000005260 corrosion Methods 0.000 claims description 9
- 239000004809 Teflon Substances 0.000 claims description 8
- 229920006362 Teflon® Polymers 0.000 claims description 8
- 238000003754 machining Methods 0.000 claims description 8
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 238000010884 ion-beam technique Methods 0.000 claims description 5
- 238000003672 processing method Methods 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- 229910003460 diamond Inorganic materials 0.000 claims description 3
- 239000010432 diamond Substances 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- 230000003628 erosive effect Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 abstract description 7
- 238000005516 engineering process Methods 0.000 abstract description 4
- 238000001035 drying Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 8
- 238000003801 milling Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/3086—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/3088—Process specially adapted to improve the resolution of the mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68309—Auxiliary support including alignment aids
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Micromachines (AREA)
- ing And Chemical Polishing (AREA)
Abstract
The present invention relates to the technical fields of micro-nano technology, more specifically, it is related to a kind of position and the controllable lithographic method of accurate size, two pieces of templates is provided first, then according to chip form and thickness, required etching position and etched shape, corresponding template is manufactured, template and chip are then packed into liquid pool, then performs etching etching liquid injection liquid pool, finally clean chip and drying, the required chip after obtaining accurate etching.The present invention solves difficult positioning in etching process, can not etch specific position specific dimensions and shape, etch low efficiency, etch problem at high cost.The present invention can be in different shape and size, different-thickness, performs etching on the single-layer or multi-layer compound chip of different materials；When using different chips in etching instead, only need to carry out simple processing to template and liquid pool can assemble use.The accurate positioning of chip had not only may be implemented in the present invention, but also the accurate etching of size and shape needed for can realizing required position, and manufacturing method is simple and efficient, applied widely.
Description
Technical field
The present invention relates to the technical fields of micro-nano technology, more particularly, to a kind of position and accurate size controllable quarter
Etching method.
Background technique
In the past more than ten years, the important means of always material processing is processed to chip with the method for etching
One of.Silicon wafer photoetching generally all needs to handle by counterdie, gluing, front baking, and alignment and exposure, development check, post bake after development,
Etching, the series of steps such as remove photoresist, process is cumbersome and needs to take considerable time.With the continuous hair of micro-nano technology technology
Exhibition, the required precision of etching is continuously improved in people, and proposes requirements at the higher level to etching position and etched shape and size.
Existing lithographic method and device are unable to reach desired position precision and required etching size and shape need.
Summary of the invention
It is an object of the invention to overcome the deficiencies of the prior art and provide the controllable etching sides in a kind of position and accurate size
Method not only may be implemented to carry out single or double etching on the single-layer or multi-layer compound chip of variety classes different-thickness, but also can
Realize the two-sided accurate etching of the shape needed for required position, manufacturing method is simple and efficient, has a wide range of application.
In order to solve the above technical problems, the technical solution adopted by the present invention is that：
A kind of position and the controllable lithographic method of accurate size are provided, included the following steps：
S1. provide two pieces of templates, the template with a thickness of 1 μm~200 μm；
S2. according to chip form, thickness, required etching position and required etched shape, processing and manufacturing the first etching template
With the second etching template, the accommodating space with chip cooperation is formed between the first etching template and the second etching template；
S3. chip is placed in the accommodating space between the first etching template, the second etching template, and by chip, first
Etching template, the second etching template are packed in liquid pool；
S4. it will be performed etching in liquid pool described in etching liquid injection step S3；
S5. the chip etched through step S4 is taken out, and is cleaned and is dried.
The controllable lithographic method in position and accurate size of the invention solves difficult positioning in etching process, can not etch
Specific position specific dimensions and shape etch low efficiency, etch problem at high cost.The present invention can be in different shape and ruler
Very little, different-thickness performs etching on the single-layer or multi-layer compound chip of different materials；When using different chips in etching instead, need pair
Template and liquid pool, which carry out simple processing, can assemble use.The accurate positioning of chip had not only may be implemented in the present invention, but also can realize institute
The accurate etching of size and shape needed for position is needed, manufacturing method is simple and efficient, applied widely.
Preferably, in step S1, the template of teflon material, pmma material, polyetheretherketonematerials materials by being made
Corrosion-resistant structure, the shape of the template is one kind of cuboid, square, cylindrical body.Template is setting for corrosion-resistant structure
Set can prevent etching liquid to chip except it is required etching position in addition to position formed etching, can be improved etching accuracy and
High efficiency.
Preferably, chip described in step S2 is selected from one of silicon wafer, single layer of chips, compound chip, the chip
Shape be cuboid, square, cylindrical body one kind, the chip with a thickness of 100 μm~2mm.The present invention can be in difference
Shape and size, different-thickness perform etching on the single-layer or multi-layer compound chip of different materials；Use different chips in etching instead
When, only need to carry out simple processing to template and liquid pool can assemble use, applied widely.
Preferably, required etched shape described in step S2 be square, rectangle, circle, triangle, diamond shape, star
One of or a variety of combinations, it is described needed for etched shape through template-setup.Required etching position can be any single
Position, multiple positions or array.
Preferably, fabricated described in step S2 the processing method taken be selected from be machined, laser machine, focus from
One of beamlet processing or a variety of combinations.It can first be processed and chip surface using a kind of processing method on the surface of template
Size and the identical region of shape form the accommodating space with chip cooperation between two pieces of templates；Again using another processing
Method etches position needed for machining area and etches required etched shape.
Preferably, liquid pool described in step S3 is made of teflon material, pmma material, polyetheretherketonematerials materials
Corrosion-resistant structure.Setting prevents etching liquid from extending the service life of liquid pool to the corrosion of liquid pool in this way.
Preferably, the etching liquid is selected from sulfuric acid solution, nitric acid solution, hydrochloric acid solution, sodium hydroxide solution, potassium hydroxide
One of solution.Etching liquid be with highly acid, strong basicity, strong oxidizing solution and other chemistry can to occur with chip anti-
Other solution answered.
Preferably, the liquid pool includes the first liquid pool and the second liquid pool, and first liquid pool and the second liquid pool pass through screw thread
Structure connection, the of the first etching template and the second etching template can be accommodated by being formed between first liquid pool, the second liquid pool
One cavity is formed with appearance between the first etching template and the first liquid pool, between the second etching template and the second liquid pool
Receive the second cavity of etching liquid.Template is set in this way and chip is fixed in liquid pool, convenient for etching the determination of position；Using
The connection of helicitic texture, the first liquid pool and the handling of the second liquid pool are convenient, and connection is firm.
Preferably, first liquid pool, the second liquid pool one end be respectively connected with for etching liquid flow into the second cavity pipe
Road.Etching liquid is poured into or is poured out liquid pool, it is convenient to operate, and the safety operated is also ensured by pipeline.
Compared with prior art, the beneficial effects of the invention are as follows：
(1) position of the invention and the controllable lithographic method of accurate size, can be in silicon wafer and other single layer of chips or more
Single or double etching is carried out on layer compound chip, it is applied widely.
(2) machining, laser processing, focused ion beam processing and above-mentioned processing can be used in template of the invention processing
The Combined machining of mode can process specific shape and size, accurate positioning, machining accuracy in the specific position of required etching
It is high.
(3) present invention only need to carry out simply processing to assemble making when using different chips in etching instead to template and liquid pool
With, the etching device scope of application, and production cost is greatly reduced, improve production efficiency.
Detailed description of the invention
Fig. 1 is the flow chart of position of the invention and the controllable lithographic method of accurate size.
Fig. 2 is the structural schematic diagram of template in step S1.
Fig. 3 is the structural schematic diagram I that step S2 processes template surface.
Fig. 4 is the structural schematic diagram II that step S2 processes template surface.
The structural schematic diagram of the first etching template and the second etching template that Fig. 5 is step S2.
Fig. 6 is the structural schematic diagram of liquid pool in step S3.
Fig. 7 is the structural schematic diagram for completing the chip of etching.
In attached drawing：1- template；11- first etches template；12- second etches template；Etched shape needed for 13-；2- chip；
3- milling cutter；4- focused ion beam；5- liquid pool；The first liquid pool of 51-；The second liquid pool of 52-；53- pipeline.
Specific embodiment
The present invention is further illustrated With reference to embodiment.Wherein, attached drawing only for illustration,
What is indicated is only schematic diagram, rather than pictorial diagram, should not be understood as the limitation to this patent；Reality in order to better illustrate the present invention
Example is applied, the certain components of attached drawing have omission, zoom in or out, and do not represent the size of actual product；To those skilled in the art
For, the omitting of some known structures and their instructions in the attached drawings are understandable.
The same or similar label correspond to the same or similar components in the attached drawing of the embodiment of the present invention；It is retouched in of the invention
In stating, it is to be understood that if the orientation or positional relationship for having the instructions such as term " on ", "lower", "left", "right" is based on attached drawing
Shown in orientation or positional relationship, be merely for convenience of description of the present invention and simplification of the description, rather than indication or suggestion is signified
Device or element must have a particular orientation, be constructed and operated in a specific orientation, therefore positional relationship is described in attached drawing
Term only for illustration, should not be understood as the limitation to this patent, for the ordinary skill in the art, can
To understand the concrete meaning of above-mentioned term as the case may be.
Embodiment 1
It is as shown in Figure 1 position of the invention and the flow chart of the controllable lithographic method of accurate size, includes the following steps：
S1. provide two pieces of templates 1, as shown in Fig. 2, template 1 with a thickness of 1 μm~200 μm；Wherein, template 1 is by Teflon
Imperial material, pmma material, corrosion-resistant structure made of polyetheretherketonematerials materials prevent etching liquid to chip 2 except required etching
Position except position forms etching, improves the accuracy and high efficiency of etching；The shape of template 1 is cuboid, square, circle
One kind of cylinder.
S2. according to 2 shape of chip, thickness, required etching position and required etched shape 13, processing and manufacturing the first etching mould
Plate 11 and the second etching template 12, are formed with the appearance cooperated with chip 2 between the first etching template 11 and the second etching template 12
Between emptying；Wherein, chip 2 is selected from one of silicon wafer, single layer of chips 2, compound chip 2, and the shape of chip 2 is cuboid, just
Cube, one kind of cylindrical body, chip 2 with a thickness of 100 μm~2mm；The present invention can be different thick in different shape and size
It spends, is performed etching on the single-layer or multi-layer compound chip 2 of different materials；When using different chips 2 etching instead, only need to template 1 and
Liquid pool, which carries out simple processing, can assemble use, applied widely；Required etched shape 13 is square, is rectangular in step S2
One of shape, circle, triangle, diamond shape, star or a variety of combinations, required etched shape 13 are arranged through template 1；Step
The processing method taken is fabricated in rapid S2 is selected from one of machining, laser processing, the processing of focused ion beam 4 or more
The combination of kind；The present embodiment first uses machining mode, as shown in figure 3, being processed and chip 2 with milling cutter 3 on 1 surface of template
Surface size and the identical region of shape reuse focused ion beam 4 in four, machining area center symmetric position, process and pass through
The required etched shape 13 of template 1 is worn, as shown in Figure 4, Figure 5.
S3. chip 2 is placed in the accommodating space between the first etching template 11, second etching template 12, and by chip
2, the first etching template 11, second etches template 12 and is packed in liquid pool；Wherein, liquid pool is by teflon material, organic glass
Corrosion-resistant structure made of material, polyetheretherketonematerials materials prevents etching liquid from extending the service life of liquid pool to the corrosion of liquid pool.
S4. it will be performed etching in etching liquid injection step S3 liquid pool 5；Wherein, it is molten to be selected from sulfuric acid solution, nitric acid for etching liquid
One of liquid, hydrochloric acid solution, sodium hydroxide solution, potassium hydroxide solution.As shown in fig. 6, liquid pool includes 51 He of the first liquid pool
Second liquid pool 52, first liquid pool 51 are connect with the second liquid pool 52 by helicitic texture, first liquid pool 51, the second liquid pool
The first cavity that can accommodate the first etching template 11 and the second etching template 12, the first etching template 11 are formed between 52
The second sky for accommodating etching liquid is formed between the first liquid pool 51, between the second etching template 12 and the second liquid pool 52
Chamber, template 1 and chip 2 are fixed in liquid pool, convenient for etching the determination of position；First liquid pool 51, the second liquid pool 52
One end be respectively connected with the pipeline 53 that the second cavity is flowed into for etching liquid, etching liquid is poured into or is poured out liquid by pipeline 53
Pond, it is convenient to operate, and the safety operated is also ensured.
S5. the chip 2 etched through step S4 is taken out, and is cleaned and is dried.The present embodiment uses cleaning when implementing
Teflon round end tweezers chip 2 is carefully taken out from liquid pool, be put into clean beaker；Use deionized water repeated flushing
Chip 2；Chip 2 is carefully taken out from beaker using clean Teflon round end tweezers；Using the dry chip 2 of air blow gun, obtain
To chip 2, as shown in Figure 7.
By above step：The present invention provides a kind of position and accurate size controllable lithographic methods and device, solve
Difficult positioning, can not etch specific position specific dimensions and shape in etching process, etch low efficiency, etch difficulty at high cost
Topic.The present invention can be in different shape and size, different-thickness, is carved on the single-layer or multi-layer compound chip of different materials
Erosion；When using different chips in etching instead, only need to carry out simple processing to template and liquid pool can assemble use.The present invention both can be real
The accurate positioning of existing chip, but the accurate etching of size and shape needed for can realizing required position, manufacturing method are simple and efficient, fit
It is wide with range.
Obviously, the above embodiment of the present invention be only to clearly illustrate example of the present invention, and not be pair
The restriction of embodiments of the present invention.For those of ordinary skill in the art, may be used also on the basis of the above description
To make other variations or changes in different ways.There is no necessity and possibility to exhaust all the enbodiments.It is all this
Made any modifications, equivalent replacements, and improvements etc., should be included in the claims in the present invention within the spirit and principle of invention
Protection scope within.
Claims (9)
1. a kind of position and the controllable lithographic method of accurate size, which is characterized in that include the following steps：
S1. provide two pieces of templates, the template with a thickness of 1 μm~200 μm；
S2. according to chip form, thickness, required etching position and required etched shape, the first etching template of processing and manufacturing and the
Two etching templates are formed with the accommodating space with chip cooperation between the first etching template and the second etching template；
S3. chip is placed in the accommodating space between the first etching template, the second etching template, and chip, first is etched
Template, the second etching template are packed in liquid pool；
S4. it will be performed etching in liquid pool described in etching liquid injection step S3；
S5. the chip etched through step S4 is taken out, and is cleaned and is dried.
2. position according to claim 1 and the controllable lithographic method of accurate size, which is characterized in that in step S1, institute
Stating template is the corrosion-resistant structure made of teflon material, pmma material, polyetheretherketonematerials materials, the shape of the template
For one kind of cuboid, square, cylindrical body.
3. position according to claim 1 and the controllable lithographic method of accurate size, which is characterized in that described in step S2
Chip is selected from one of silicon wafer, single layer of chips, compound chip, and the shape of the chip is cuboid, square, cylindrical body
One kind, the chip with a thickness of 100 μm~2mm.
4. position according to claim 3 and the controllable lithographic method of accurate size, which is characterized in that described in step S2
Required etched shape is square, rectangle, circle, triangle, diamond shape, one of star or a variety of combinations, the institute
Need etched shape through template-setup.
5. position according to claim 3 and the controllable lithographic method of accurate size, which is characterized in that described in step S2
It fabricates the processing method taken and is selected from one of machining, laser processing, focused ion beam processing or a variety of groups
It closes.
6. position according to claim 1 and the controllable lithographic method of accurate size, which is characterized in that described in step S3
Liquid pool is the corrosion-resistant structure made of teflon material, pmma material, polyetheretherketonematerials materials.
7. position according to claim 4 and the controllable lithographic method of accurate size, which is characterized in that the etching liquid choosing
From one of sulfuric acid solution, nitric acid solution, hydrochloric acid solution, sodium hydroxide solution, potassium hydroxide solution.
8. position according to any one of claims 1 to 7 and the controllable lithographic method of accurate size, which is characterized in that institute
Stating liquid pool includes the first liquid pool and the second liquid pool, and first liquid pool is connect with the second liquid pool by helicitic texture, and described first
The first cavity that can accommodate the first etching template and the second etching template, first quarter are formed between liquid pool, the second liquid pool
The second sky for accommodating etching liquid is formed between erosion template and the first liquid pool, between the second etching template and the second liquid pool
Chamber.
9. position according to claim 8 and the controllable lithographic method of accurate size, which is characterized in that first liquid
Pond, the second liquid pool one end be respectively connected with for etching liquid flow into the second cavity pipeline.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810569867.7A CN108878283B (en) | 2018-06-05 | 2018-06-05 | Etching method with accurately controllable position and size |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810569867.7A CN108878283B (en) | 2018-06-05 | 2018-06-05 | Etching method with accurately controllable position and size |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108878283A true CN108878283A (en) | 2018-11-23 |
| CN108878283B CN108878283B (en) | 2020-10-09 |
Family
ID=64336935
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810569867.7A Active CN108878283B (en) | 2018-06-05 | 2018-06-05 | Etching method with accurately controllable position and size |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108878283B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109795983A (en) * | 2019-02-01 | 2019-05-24 | 中国科学院微电子研究所 | Nano-pore structure and its process equipment and method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102290361A (en) * | 2011-07-05 | 2011-12-21 | 清华大学 | Template alignment method applied to three-dimensional integration technology |
| CN102491258A (en) * | 2011-12-30 | 2012-06-13 | 东南大学 | Preparation method of wafer-grade spherical micro-lens array |
| CN104347790A (en) * | 2013-08-05 | 2015-02-11 | 国家纳米科学中心 | Manufacturing method and manufacturing device of planar thin-film thermoelectric device |
-
2018
- 2018-06-05 CN CN201810569867.7A patent/CN108878283B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102290361A (en) * | 2011-07-05 | 2011-12-21 | 清华大学 | Template alignment method applied to three-dimensional integration technology |
| CN102491258A (en) * | 2011-12-30 | 2012-06-13 | 东南大学 | Preparation method of wafer-grade spherical micro-lens array |
| CN104347790A (en) * | 2013-08-05 | 2015-02-11 | 国家纳米科学中心 | Manufacturing method and manufacturing device of planar thin-film thermoelectric device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109795983A (en) * | 2019-02-01 | 2019-05-24 | 中国科学院微电子研究所 | Nano-pore structure and its process equipment and method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108878283B (en) | 2020-10-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN112170994B (en) | Electrochemical deposition-electrolysis combined processing method based on mask electric field constraint | |
| CN103818873B (en) | A kind of big thickness, the processing method of all-metal channel-type micro structure of high-aspect-ratio | |
| CN104625415A (en) | Method and device for preparing bionic super-hydrophobic micro-nano surface through femtosecond laser | |
| CN103353627A (en) | Manufacturing method of micro lens array mold | |
| CN103706551B (en) | Self-focusing type ultrasonic transducer based on Fresnel formula piezo-electricity composite material | |
| CN109534684A (en) | A kind of etching glass and its etching technics based on nanoscale without flash-point anti-dazzle technology | |
| CN105337168A (en) | Optical pumping nitride echo wall laser performing emission in single direction and preparation method thereof | |
| CN106707381B (en) | A kind of process that microlens array makes | |
| CN108878283A (en) | A kind of position and the controllable lithographic method of accurate size | |
| CN104326440A (en) | Method for manufacturing micro-nano structure with depth accurately controlled | |
| CN102978567A (en) | Method for preparing photoetching-free high-precision mask for evaporated electrodes | |
| CN104330840B (en) | A kind of many steps lenticule preparation method and optical element step preparation method | |
| CN104332398B (en) | Method for preparing large-area umbrella-shaped silicon cone composite structure array | |
| CN100476460C (en) | Variable focal length X-ray compound lens and manufacturing method thereof | |
| JP2007145656A (en) | Glass substrate with longitudinal pore and its producing method | |
| CN105858591A (en) | Metal micro-structure and manufacturing method thereof | |
| CN104900292A (en) | Preparation method of planar lobster-eye focusing lens based on semiconductor technology | |
| CN105127526A (en) | Disc type scanning electrode mask film microelectrolysis electrical discharge machining system and machining method | |
| CN116520464A (en) | Method for preparing fly-eye lens | |
| CN110286435A (en) | A kind of ultraviolet polarization splitting prism and preparation method thereof | |
| US20060249863A1 (en) | Prism manufacturing method | |
| CN105738980B (en) | Continuous-surface shape quartz micro optical element Mechanical lithography combined machining method | |
| KR101840030B1 (en) | Fabrication method of ultra low density three-dimensional metal or ceramic thin-film structure based on photo-lithography | |
| CN1811491A (en) | A X-lay assembling lens and producing technology thereof | |
| JP2006334987A (en) | Method for manufacturing molding die and molded article obtained by this die |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |