CN109795983A - Nano-pore structure and its process equipment and method - Google Patents
Nano-pore structure and its process equipment and method Download PDFInfo
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- CN109795983A CN109795983A CN201910106419.8A CN201910106419A CN109795983A CN 109795983 A CN109795983 A CN 109795983A CN 201910106419 A CN201910106419 A CN 201910106419A CN 109795983 A CN109795983 A CN 109795983A
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- nano
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- pore structure
- silicon wafer
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- 239000011148 porous material Substances 0.000 title claims abstract description 54
- 238000000034 method Methods 0.000 title claims abstract description 44
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 40
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 40
- 239000010703 silicon Substances 0.000 claims abstract description 40
- 238000005530 etching Methods 0.000 claims abstract description 19
- 238000003672 processing method Methods 0.000 claims abstract description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000008367 deionised water Substances 0.000 claims abstract description 8
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 8
- 239000007850 fluorescent dye Substances 0.000 claims abstract description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000004140 cleaning Methods 0.000 claims abstract description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 4
- 238000012545 processing Methods 0.000 claims description 4
- 238000010276 construction Methods 0.000 claims description 3
- 238000011161 development Methods 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims 1
- 239000000460 chlorine Substances 0.000 claims 1
- 229910052801 chlorine Inorganic materials 0.000 claims 1
- 238000001514 detection method Methods 0.000 abstract description 5
- 239000003550 marker Substances 0.000 abstract description 2
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- 108090000623 proteins and genes Proteins 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 201000010099 disease Diseases 0.000 description 1
- 208000037265 diseases, disorders, signs and symptoms Diseases 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000002068 genetic effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000007671 third-generation sequencing Methods 0.000 description 1
Landscapes
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
Abstract
The disclosure provides a kind of nano-pore structure and its process equipment and method, the processing method of the nano-pore structure include: step A: forming graphics field and trench structure with window depth in the front surface of silicon wafer；Step B: using the process equipment of nano-pore structure by silicon wafer clamping, the trench structure on its front surface is made to be directed at the first opening of the second fixture；Step C: injecting etching solution into the first fixture, and deionized water and the fluorescent dye sensitive to the etching solution are injected into the second fixture；Step D: observing the front surface of silicon wafer by observation window in real time, when discovery fluorescence excites, injects deionized water into the cavity of the first fixture to remove etching solution therein；Step E: by silicon chip extracting, cleaning, with being dried with nitrogen.The method that the nano-pore structure and its process equipment and method that the disclosure provides utilize fluorescent marker detection, realizes the quick accurate control to nano-pore.
Description
Technical field
This disclosure relates to nano-pore and nanohole array processing technique field more particularly to a kind of nano-pore structure and its add
Construction equipment and method.
Background technique
Genetic test and the detection of other nanometer particles have a large amount of need in fields such as disease detection, life sciences
It asks.Equipment used by existing gene tester is very expensive, and volume is larger, and requires PCR cooperation greatly and realize.Nanometer
Hole is as third generation sequencing technologies, due to not needing PCR, the advantages such as longer gene strand can be tested with low in cost, by
Research extensively.
Existing nano-pore technology includes several technologies such as biological nano hole and solid nano hole.Due to solid nano hole phase
Have size controllable than biological nano hole, steady performance is the hot spot of research.Solid nano hole machined generally uses
The preparation of the physics modes such as electron microscope is penetrated, but this method Production Time is long, cost of manufacture is high.
How the method for a kind of quick cheap processing nano-pore and nanohole array is provided, while can guarantee preparation
It is this field researcher's technical issues that need to address that nano-pore, which has given size,.
Disclosure
(1) technical problems to be solved
Based on above-mentioned technical problem, the disclosure provides a kind of nano-pore structure and its process equipment and method, existing to alleviate
There is the processing method Production Time of the nano-pore and nanohole array in technology long, the high technical problem of cost of manufacture.
(2) technical solution
According to one aspect of the disclosure, a kind of process equipment of nano-pore structure is provided, comprising: for being matched for clamping tightly device
The first fixture and the second fixture of part, first fixture and the second fixture include: cavity, are set to inside it；First opening,
On the clamping face of being correspondingly arranged in, and it is connected to its internal cavity；And second opening, be respectively arranged at first fixture and
On the non-clamping face of second fixture, and it is connected to the cavity；Wherein, second fixture further include: observation window is set
It is placed in the back side of second fixture relative to the clamping face, for observing the feelings of first opening through the cavity
Condition.
In some embodiments of the present disclosure, described second is open including N number of, wherein N >=2.
According to another aspect of the disclosure, a kind of processing method of nano-pore structure is also provided, comprising: step A: in silicon
The front surface of piece forms graphics field and the trench structure with window depth；Step B: using as in the claims 1 to 2
Step A is obtained silicon wafer clamping by the process equipment of described in any item nano-pore structures, makes the trench structure pair on its front surface
First opening of quasi- second fixture；Etching solution is injected in the cavity of C: Xiang Suoshu first fixture of step, to
Deionized water and the fluorescent dye sensitive to the etching solution are injected in the cavity of second fixture；Step D: pass through
Observation window observes the front surface of the silicon wafer in real time, when discovery fluorescence excites, injects in the cavity of the first fixture of Xiang Suoshu
Deionized water is to remove etching solution therein；Step E: by silicon chip extracting, cleaning, with being dried with nitrogen.
In some embodiments of the present disclosure, the step A includes: step A1: being cleaned to silicon wafer, in front and back
Face coats photoresist；Step A2: photoetching is carried out to front side of silicon wafer, development forms graphics field；Step A3: to formation graphics field
Silicon wafer perform etching, formed have window depth trench structure.
In some embodiments of the present disclosure, in the step A3, had using dry etching or wet etching formation
The trench structure of window depth.
In some embodiments of the present disclosure, in the step B, the process equipment of the nano-pore structure is by silicon wafer clamping
Afterwards, the cavity in first fixture and second fixture is separated by silicon wafer.
In some embodiments of the present disclosure, in the step C, the etching solution is chloride ion-containing or can be contaminated by fluorescence
Expect the potassium hydroxide solution of other ionic materials of excitation.
In some embodiments of the present disclosure, the silicon wafer is the silicon wafer of twin polishing.
In some embodiments of the present disclosure, this method is used to form single nano-pore or nanohole array.
According to another aspect of the disclosure, a kind of nano-pore structure is also provided, the nano-pore knot provided by the disclosure
The processing method of structure is made.
(3) beneficial effect
It can be seen from the above technical proposal that nano-pore structure and its process equipment and method that the disclosure provides have with
One of lower beneficial effect or in which a part:
(1) method etched by using potassium hydroxide solution, realizes the quick preparation of nano-pore structure；
(2) method detected by using fluorescent marker realizes the quick accurate control to nano-pore.
Detailed description of the invention
Fig. 1 is the structural schematic diagram for the nano-pore structure process equipment that the embodiment of the present disclosure provides.
Fig. 2 is the step flow chart of the processing method for the nano-pore structure that the embodiment of the present disclosure provides.
[embodiment of the present disclosure main element symbol description in attached drawing]
The first fixture of 10-；
11- first is open；
12- second is open；
The second fixture of 20-；
21- first is open；
22- second is open；
23- observation window；
30- trench structure.
Specific embodiment
The nano-pore structure and its process equipment and method that the disclosure provides are by forming the window not penetrated in front side of silicon wafer
Mouthful, then overleaf etching forms nano-pore, and the formation of nano-pore is judged using the method for fluorescent dye, reaches quick high accuracy
The purpose of the formation of detection hole realizes the high-precision preparation of nano-pore and nanohole array.
For the purposes, technical schemes and advantages of the disclosure are more clearly understood, below in conjunction with specific embodiment, and reference
The disclosure is further described in attached drawing.
According to one aspect of the disclosure, a kind of process equipment of nano-pore structure is provided, as shown in Figure 1, comprising: be used for
It is matched for clamping tightly the first fixture 10 and the second fixture 20 of device, first fixture 10 and the second fixture 20 include: cavity, first
Opening 11/21 and the second opening 12/22；Cavity is set to the inside of first fixture 10 and the second fixture 20；First opening
11/21 is correspondingly arranged on clamping face, and is connected to its internal cavity；Second opening 12/22 is respectively arranged at the first fixture
10 and second fixture 20 non-clamping face on, and be connected to cavity；Wherein, the second fixture 20 further include: observation window 23, setting
In the back side of second fixture 20 relative to the face of clamping, for penetrating the case where cavity is observed at the first opening 21.
In some embodiments of the present disclosure, as shown in Figure 1, the second opening 12/22 includes N number of, wherein N >=2.
According to another aspect of the disclosure, a kind of processing method of nano-pore structure is also provided, as shown in Figure 2, comprising:
Step A: graphics field and trench structure with window depth are formed in the front surface of silicon wafer；Step B: implemented using the disclosure
Step A is obtained silicon wafer clamping by the process equipment of nano-pore structure that example provides, and the trench structure on its front surface is made to be directed at the
First opening 21 of two fixtures 20；Step C: etching solution is injected into the cavity of the first fixture 10 by the second opening 12, is led to
It crosses the second opening 22 and injects deionized water and the fluorescent dye sensitive to the etching solution into the cavity of the second fixture 20；Step
Rapid D: it observes the front surface of silicon wafer in real time by observation window 23 and is injected when discovery fluorescence excites into the cavity of the first fixture 10
Deionized water is to remove etching solution therein；Step E: by silicon chip extracting, cleaning, with being dried with nitrogen.
In some embodiments of the present disclosure, step A includes: step A1: cleaning to silicon wafer, applies in front and back
Cover photoresist；Step A2: photoetching is carried out to front side of silicon wafer, development forms graphics field；Step A3: to the silicon for forming graphics field
Piece performs etching, and forms the trench structure with window depth.
In some embodiments of the present disclosure, in step A3, being formed using dry etching or wet etching has window
The trench structure of depth.
In some embodiments of the present disclosure, in step B, the process equipment of nano-pore structure is by after silicon wafer clamping, and first
Cavity in fixture 10 and the second fixture 20 is separated by silicon wafer.
In some embodiments of the present disclosure, in step C, etching solution is chloride ion-containing or can be excited by fluorescent dye
The potassium hydroxide solution of other ionic materials.
In some embodiments of the present disclosure, silicon wafer is the silicon wafer of twin polishing.
In some embodiments of the present disclosure, this method is used to form single nano-pore or nanohole array.
According to another aspect of the disclosure, a kind of nano-pore structure is also provided, is received by what the embodiment of the present disclosure provided
The processing method of metre hole structure is made.
According to above description, those skilled in the art should be to the nano-pore structure and its processing that the embodiment of the present disclosure provides
Device and method have clear understanding.
In conclusion nano-pore structure and its process equipment and method that the disclosure provides in front side of silicon wafer by forming not
The window penetrated, then etches to form nano-pore in silicon chip back side, and the formation of nano-pore is judged using the method for fluorescent dye, is reached
To the purpose of the formation of quick high accuracy detection hole, the high-precision preparation of nano-pore and nanohole array is realized.
It should also be noted that, the direction term mentioned in embodiment, for example, "upper", "lower", "front", "rear", " left side ",
" right side " etc. is only the direction with reference to attached drawing, not is used to limit the protection scope of the disclosure.Through attached drawing, identical element by
Same or similar appended drawing reference indicates.When may cause understanding of this disclosure and cause to obscure, conventional structure will be omitted
Or construction.
And the shape and size of each component do not reflect actual size and ratio in figure, and only illustrate the embodiment of the present disclosure
Content.In addition, in the claims, any reference symbol between parentheses should not be configured to the limit to claim
System.
Similarly, it should be understood that in order to simplify the disclosure and help to understand one or more of each open aspect,
Above in the description of the exemplary embodiment of the disclosure, each feature of the disclosure is grouped together into single implementation sometimes
In example, figure or descriptions thereof.However, the disclosed method should not be interpreted as reflecting the following intention: i.e. required to protect
The disclosure of shield requires features more more than feature expressly recited in each claim.More precisely, such as front
Claims reflect as, open aspect is all features less than single embodiment disclosed above.Therefore,
Thus the claims for following specific embodiment are expressly incorporated in the specific embodiment, wherein each claim itself
All as the separate embodiments of the disclosure.
Particular embodiments described above has carried out further in detail the purpose of the disclosure, technical scheme and beneficial effects
Describe in detail it is bright, it is all it should be understood that be not limited to the disclosure the foregoing is merely the specific embodiment of the disclosure
Within the spirit and principle of the disclosure, any modification, equivalent substitution, improvement and etc. done should be included in the guarantor of the disclosure
Within the scope of shield.
Claims (10)
1. a kind of process equipment of nano-pore structure, comprising: for being matched for clamping tightly the first fixture and the second fixture of device, this
One fixture and the second fixture include:
Cavity is set to inside it；
First opening, is correspondingly arranged on clamping face, and is connected to its internal cavity；And
Second opening, is respectively arranged on the non-clamping face of first fixture and second fixture, and connects with the cavity
It is logical；
Wherein, second fixture further include: observation window is set to back of second fixture relative to the clamping face
Face, for penetrating the case where cavity observes first opening.
2. the process equipment of nano-pore structure according to claim 1, described second is open including N number of, wherein N >=2.
3. a kind of processing method of nano-pore structure, comprising:
Step A: graphics field and trench structure with window depth are formed in the front surface of silicon wafer；
Step B: step A is obtained using the process equipment of the nano-pore structure as described in above-mentioned any one of claims 1 to 2
Silicon wafer clamping makes the trench structure on its front surface be directed at first opening of second fixture；
Etching solution is injected in the cavity of C: Xiang Suoshu first fixture of step, is infused in the cavity of the second fixture of Xiang Suoshu
Enter deionized water and the fluorescent dye sensitive to the etching solution；
Step D: observing the front surface of the silicon wafer by observation window in real time, when discovery fluorescence excites, the first fixture of Xiang Suoshu
Deionized water is injected in the cavity to remove etching solution therein；
Step E: by silicon chip extracting, cleaning, with being dried with nitrogen.
4. the processing method of nano-pore structure according to claim 3, the step A include:
Step A1: cleaning silicon wafer, coats photoresist in front and back；
Step A2: photoetching is carried out to front side of silicon wafer, development forms graphics field；
Step A3: performing etching the silicon wafer for forming graphics field, forms the trench structure with window depth.
5. the processing method of nano-pore structure according to claim 4, in the step A3, using dry etching or wet
Method etches to form the trench structure with window depth.
6. the processing method of nano-pore structure according to claim 3, in the step B, the nano-pore structure plus
By after silicon wafer clamping, the cavity in first fixture and second fixture is separated construction equipment by silicon wafer.
7. the processing method of nano-pore structure according to claim 3, in the step C, the etching solution is containing chlorine
The potassium hydroxide solution of ion or other ionic materials that can be excited by fluorescent dye.
8. the processing method of nano-pore structure according to claim 3, the silicon wafer is the silicon wafer of twin polishing.
9. the processing method of the nano-pore structure according to any one of claim 3 to 8, this method is used to form single receive
Metre hole or nanohole array.
10. a kind of nano-pore structure passes through the processing side of the nano-pore structure as described in any one of the claims 3 to 9
Method is made.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910106419.8A CN109795983A (en) | 2019-02-01 | 2019-02-01 | Nano-pore structure and its process equipment and method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910106419.8A CN109795983A (en) | 2019-02-01 | 2019-02-01 | Nano-pore structure and its process equipment and method |
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| Publication Number | Publication Date |
|---|---|
| CN109795983A true CN109795983A (en) | 2019-05-24 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2205522A2 (en) * | 2007-10-02 | 2010-07-14 | Presidents and Fellows of Harvard College | Carbon nanotube synthesis for nanopore devices |
| CN102901763A (en) * | 2012-09-25 | 2013-01-30 | 清华大学 | Deoxyribonucleic acid (DNA) sequencing device based on graphene nanopore-microcavity-solid-state nanopore and manufacturing method |
| CN107207246A (en) * | 2014-12-01 | 2017-09-26 | 康奈尔大学 | The substrate containing nano-pore and its preparation and application of nanoscale electronic components with alignment |
| CN108706543A (en) * | 2018-06-05 | 2018-10-26 | 广东工业大学 | A kind of nano-pore manufacturing method accurately controlled |
| CN108878283A (en) * | 2018-06-05 | 2018-11-23 | 广东工业大学 | A kind of position and the controllable lithographic method of accurate size |
-
2019
- 2019-02-01 CN CN201910106419.8A patent/CN109795983A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2205522A2 (en) * | 2007-10-02 | 2010-07-14 | Presidents and Fellows of Harvard College | Carbon nanotube synthesis for nanopore devices |
| CN102901763A (en) * | 2012-09-25 | 2013-01-30 | 清华大学 | Deoxyribonucleic acid (DNA) sequencing device based on graphene nanopore-microcavity-solid-state nanopore and manufacturing method |
| CN107207246A (en) * | 2014-12-01 | 2017-09-26 | 康奈尔大学 | The substrate containing nano-pore and its preparation and application of nanoscale electronic components with alignment |
| CN108706543A (en) * | 2018-06-05 | 2018-10-26 | 广东工业大学 | A kind of nano-pore manufacturing method accurately controlled |
| CN108878283A (en) * | 2018-06-05 | 2018-11-23 | 广东工业大学 | A kind of position and the controllable lithographic method of accurate size |
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Application publication date: 20190524 |