CN203878204U - Device for enhancing film uniformity on sputtering system - Google Patents
Device for enhancing film uniformity on sputtering system Download PDFInfo
- Publication number
- CN203878204U CN203878204U CN201420268937.2U CN201420268937U CN203878204U CN 203878204 U CN203878204 U CN 203878204U CN 201420268937 U CN201420268937 U CN 201420268937U CN 203878204 U CN203878204 U CN 203878204U
- Authority
- CN
- China
- Prior art keywords
- vacuum chamber
- gas pipeline
- model
- utility
- air inlet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004544 sputter deposition Methods 0.000 title claims abstract description 18
- 230000002708 enhancing effect Effects 0.000 title abstract 4
- 239000000376 reactant Substances 0.000 claims abstract description 25
- 239000007789 gas Substances 0.000 claims description 33
- 239000012495 reaction gas Substances 0.000 claims description 13
- 239000012159 carrier gas Substances 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 238000000034 method Methods 0.000 abstract description 22
- 239000004065 semiconductor Substances 0.000 abstract description 11
- 239000010408 film Substances 0.000 description 27
- 238000005516 engineering process Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000036760 body temperature Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000001931 thermography Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The utility model provides a device for enhancing film uniformity on a sputtering system, which comprises a vacuum chamber, a target, a wafer table, a gas inlet circular ring and a reactant gas pipeline, wherein the target is positioned at the center of the upper part in the vacuum chamber; the wafer table is positioned at the center of the bottom in the vacuum chamber; the gas inlet circular ring is positioned at the center of the middle part in the vacuum chamber and connected with the reactant gas pipeline; and the reactant gas pipeline is connected with the gas inlet circular ring and used for inputting reactant gas into the vacuum chamber through the gas inlet circular ring. Correspondingly, the utility model also provides a method for enhancing film uniformity on a sputtering system. By using the device provided by the utility model, the reactant gas uniformly flows out of the inner wall of the gas inlet circular ring, so that the density of the reactant gas of the vacuum chamber is uniformly distributed, thereby effectively enhancing the uniformity of the semiconductor film.
Description
Technical field
The utility model relates to MEMS technical field, relates in particular to the device for improving uniformity of film in sputtering system.
Background technology
MEMS (MEMS (micro electro mechanical system)) is a kind of advanced person's manufacturing technology platform.It gets up taking semiconductor fabrication as base growth.MEMS technology has adopted a series of prior art and the material such as the photoetching in semiconductor technology, burn into film.Use advanced MEMS micro-processing technology can produce the infrared sensor of superior performance.Now, the application of infrared sensor is more and more extensive, for example medically carrying out aspect contactless Quick Measurement body temperature, this at needs to important in inhibiting aspect crowd's thermometric on a large scale; In addition it is also applied to scientific research and military upper, such as purposes such as infrared spectrometer, guided missile guiding, thermal imaging, laser detectings.Aspect civilian business, infrared sensor is also widely used in the common civil equipment such as telepilot, alarm.
In MEMS infrared sensor, the preparation technology of VOx film is the critical process of non-refrigerating infrared sensor, sputter is one of major technique of preparing thin-film material, the ion that it utilizes ion source to produce, process is accelerated to assemble in a vacuum, and forms the ion beam current of energy at a high speed, bombardment solid surface, ion and solid surface atom generation exchange of kinetic energy, make the atom of solid surface leave solid and be deposited on substrate surface.
The resistance homogeneity of VOx film is to affect a series of problem important indicators such as non-refrigerating infrared sensor imaging effect, the preparation technology of traditional VOx film is the magnetic control sputtering system growth VOx film that uses the M2000/8 model of Varian company, and this construction system comprises: vacuum chamber, sputtering system and the air-bleed system being connected with vacuum chamber respectively, wafer transfer system, gas control system.Wherein the critical process in gas control system is strictly to control the content of reactant gases at vacuum chamber, but can not make the density of the space reaction gases of process requirements reach effect relatively uniformly, thereby the semiconductor compound thin film lack of homogeneity of growth.
Therefore, wish to propose a kind of film-forming method that can effectively distribute reactant gases in vacuum chamber, make the resistance of VOx film can there is better homogeneity.
Utility model content
It is a kind of for improving the inhomogeneity device of semiconductor film and corresponding method in sputtering system that the utility model provides.
According to an aspect of the present utility model, provide a kind of for improving the inhomogeneity device of semiconductor film in sputtering system, this device comprises following part:
Vacuum chamber;
Target, is positioned at the middle position of described vacuum chamber internal upper part;
Wafer carrier, is positioned at the middle position of described vacuum chamber inner bottom part;
Air inlet annulus, is positioned at the middle position at described vacuum chamber middle part, and is connected in reaction gas pipeline;
Reaction gas pipeline, is connected with air inlet annulus, for inputting reactant gases by air inlet annulus in vacuum chamber.
Compared with prior art, the technical scheme tool that adopts the utility model to provide has the following advantages: by adopting device provided by the utility model, reactant gases is evenly flowed out from air inlet circle ring inner wall, the reactant gases density of vacuum chamber is reached and be uniformly distributed effect, thereby effectively improve the homogeneity of semiconductor film.
Brief description of the drawings
By reading the detailed description that non-limiting example is done of doing with reference to the following drawings, it is more obvious that other features, objects and advantages of the present utility model will become.
Fig. 1 is for improving the inhomogeneity device of semiconductor film in sputtering system according to the one of embodiment of the present utility model.
Embodiment
Describe embodiment of the present utility model below in detail.
The example of described embodiment is shown in the drawings, and wherein same or similar label represents same or similar element or has the element of identical or similar functions from start to finish.Be exemplary below by the embodiment being described with reference to the drawings, only for explaining the utility model, and can not be interpreted as restriction of the present utility model.Disclosing below provides many different embodiment or example to be used for realizing different structure of the present utility model.Of the present utility model open in order to simplify, hereinafter the parts to specific examples and setting are described.Certainly, they are only example, and object does not lie in restriction the utility model.In addition, the utility model can be in different examples repeat reference numerals and/or letter.This repetition is in order to simplify and object clearly, itself do not indicate the relation between discussed various embodiment and/or setting.In addition, the various specific technique that the utility model provides and the example of material, but those of ordinary skill in the art can recognize the property of can be applicable to of other techniques and/or the use of other materials.
According to an aspect of the present utility model, provide a kind of for improving the inhomogeneity device of semiconductor film in sputtering system.Below, described device is specifically described by an embodiment of the present utility model in connection with Fig. 1.As shown in Figure 1, the utility model is provided for improving the inhomogeneity device of semiconductor film in sputtering system and comprises following part:
Vacuum chamber 1, described vacuum chamber will ensure certain resistance to air loss and certain volume, concrete resistance to air loss index and volume size can need to adjust according to different equipment.
Described vacuum chamber 1 is connected with gas of carrier gas pipeline, is used to vacuum chamber that carrier gas is provided.On described gas of carrier gas pipeline, be provided with under meter, for monitoring the flow that is input to the gas of carrier gas in vacuum chamber.
Target 2, is positioned at the middle position of described vacuum chamber 1 internal upper part.Those skilled in the art can be according to different needs, the shape of designed, designed target, for example long target, square target, circle target, special-shaped target.Also can select the target of differing materials, as metal targets, alloy target material, ceramic compound target etc.In embodiment of the present utility model, selected vanadium metal target, is the VOx film in order to prepare non-refrigerating infrared sensor.
Described target is connected with shielding power supply, for provide corresponding voltage by shielding power supply in the time carrying out film construction technique.
Wafer carrier 3, is positioned at the middle position of described vacuum chamber 1 inner bottom part.Angle those skilled in the art of described wafer carrier can adjust voluntarily according to different sputter needs and experimental result.But ensure wafer position fixing on microscope carrier, can not relative displacement occur with microscope carrier, especially when wafer carrier is in the time doing specific motion.Described wafer carrier 3 ground connection.
In addition, the distance those skilled in the art between described target 2 and wafer carrier 3 also can adjust voluntarily according to different sputter needs and experimental result.Concrete implementation method can be by the vacuum chamber of fixed size, movable target or wafer carrier being set, or directly adjust by the size of adjusting vacuum chamber.
Air inlet annulus 4, is positioned at the middle position at described vacuum chamber 1 middle part, and is connected in reaction gas pipeline 5.Described reactant gases is connected with air inlet annulus by gas piping 5, for coming to the interior input reactant gases of vacuum chamber 1 by air inlet annulus.Preferably, the valve 6 of electrical signal trip switch is installed in described reaction gas pipeline 5, for the automatic break-make of control inputs reactant gases and the flow of control inputs reactant gases.Simultaneously, in described reaction gas pipeline, be provided with under meter, be used for detecting and be input to the flow of the reactant gases in vacuum chamber 1, and by result feedback to Controlling System or indicating meter, artificial or automatic control system is controlled the break-make of reaction gas pipeline by valve 6 again.Automatic control that can realization response gas flow by this design, thus the size that ensures reaction gas flow remains in the value of the most applicable sputter.
Described air inlet annulus 4 is two inlet mouth annulus, and the circle ring inner wall of air inlet simultaneously is evenly provided with the consistent production well of some amount internal diameter, can make the reactant gases even density flowing out be distributed in the process requirements space in vacuum chamber 1 by this design.According to the difference of vacuum chamber volume, and the difference of wafer carrier 3 positions, those skilled in the art can be according to self designing the internal diameter of pore and the production well particular location at air inlet circle ring inner wall.
Operate as follows according to device of the present utility model:
A) in vacuum chamber 1, pass into a certain amount of carrier gas.
Concrete, before sputtering technology starts, first vacuum chamber 1 is vacuumized, then in vacuum chamber 1, pass into a certain amount of carrier gas by gas of carrier gas pipeline, as Ar gas or He gas.
B) in vacuum chamber, pass into a certain amount of reactant gases through air inlet annulus 4.
Concrete, gas control system or manually open reaction gas pipeline valve 6, makes reactant gases through inlet mouth annulus, and the production well being arranged by air inlet circle ring inner wall enters vacuum chamber 1.In the utility model, in order to generate needed VO film, the reactant gases that therefore adopted is oxygen, and in other embodiments, those skilled in the art can select other reactant gasess as nitrogen etc. as required.
C) making alive between target 2 and wafer carrier 3.
Concrete, making alive between target 2 and wafer carrier 3, this voltage can produce gas glow discharge, and this charged ion bombards target 2 under electric field acceleration, makes the metal ion of target accelerate to be deposited on the wafer of wafer carrier 3.Between target 2 and wafer carrier 3 alive big or small those skilled in the art can select suitable magnitude of voltage according to practical situation.Know from experience uniform under plasma bombardment and metal ion reaction at this pressure dwell reaction gas, on wafer, form required metallization and thing film.The resistance homogeneity of the metallization forming by this kind of method and thing film and the density of reactant gases are at the direct relation that is evenly distributed with of vacuum chamber.
Optionally, before making alive between target 2 and wafer carrier 3, need to make mask to the surface that is placed on the wafer in wafer carrier, then carry out sputtered film technique, can form patterned film.
While adopting traditional technology to use the vacuum sputter system sputtered film of M2000/8 model of Varian company, setting processing parameter is: sputtering power DC=900W, carrier gas Ar=70sccm, sputter 1000A, 100K Ω VOx, the VOx film resistance homogeneity now sputtering is 10%.
And adopt device described in the utility model, set equally processing parameter and be: sputtering power DC=900W, carrier gas Ar=70sccm, sputter 1000A, 100K Ω VOx, the VOx film resistance homogeneity now sputtering is 3%.Contrast experiment can find out thus, the VOx film that uses method of the present utility model to form, and the lifting of the resistance homogeneity of VOx film more than approximately 2 times, thus the imaging effect of non-refrigerating infrared sensor is also effectively improved.
Compared with prior art, the utlity model has following advantage: by adopting device provided by the utility model, reactant gases is evenly flowed out from air inlet circle ring inner wall, the reactant gases density of vacuum chamber is reached and be uniformly distributed effect, thereby effectively improve the homogeneity of semiconductor film.
Although describe in detail about example embodiment and advantage thereof, be to be understood that the protection domain in the case of not departing from spirit of the present utility model and claims restriction, can carry out various variations, substitutions and modifications to these embodiment.For other examples, those of ordinary skill in the art should easily understand in keeping in the utility model protection domain, and the order of processing step can change.
In addition, range of application of the present utility model is not limited to technique, mechanism, manufacture, material composition, means, method and the step of the specific embodiment of describing in specification sheets.From disclosure of the present utility model, to easily understand as those of ordinary skill in the art, for had or be about at present technique, mechanism, manufacture, material composition, means, method or the step developed later, wherein they carry out identical function or the identical result of acquisition cardinal principle of corresponding embodiment cardinal principle of describing with the utility model, can apply them according to the utility model.Therefore, the utility model claims are intended to these technique, mechanism, manufacture, material composition, means, method or step to be included in its protection domain.
Claims (7)
1. for improving a device for uniformity of film in sputtering system, this device comprises following part:
Vacuum chamber (1);
Target (2), is positioned at the middle position of described vacuum chamber (1) internal upper part;
Wafer carrier (3), is positioned at the middle position of described vacuum chamber (1) inner bottom part;
Air inlet annulus (4), is positioned at the middle position at described vacuum chamber (1) middle part, and is connected with reaction gas pipeline (5);
Reaction gas pipeline (5), is connected with air inlet annulus, inputs reactant gases for coming by air inlet annulus in vacuum chamber (1).
2. device according to claim 1, wherein, described air inlet annulus (4) is two inlet mouth annulus.
3. device according to claim 1, wherein, described air inlet circle ring inner wall is evenly provided with the consistent production well of some amount internal diameter.
4. device according to claim 1, wherein, is provided with the valve (6) of electrical signal trip switch in described reaction gas pipeline (5).
5. device according to claim 1, wherein, described vacuum chamber (1) is connected with gas of carrier gas pipeline.
6. device according to claim 1, wherein, described target (2) is connected with shielding power supply, described wafer carrier (3) ground connection.
7. device according to claim 1, wherein, is provided with under meter on described reaction gas pipeline (5) and gas of carrier gas pipeline.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420268937.2U CN203878204U (en) | 2014-05-23 | 2014-05-23 | Device for enhancing film uniformity on sputtering system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420268937.2U CN203878204U (en) | 2014-05-23 | 2014-05-23 | Device for enhancing film uniformity on sputtering system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203878204U true CN203878204U (en) | 2014-10-15 |
Family
ID=51678726
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420268937.2U Expired - Lifetime CN203878204U (en) | 2014-05-23 | 2014-05-23 | Device for enhancing film uniformity on sputtering system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203878204U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104409342A (en) * | 2014-11-20 | 2015-03-11 | 上海华虹宏力半导体制造有限公司 | Front metal evaporation method for wafer |
| CN115354308A (en) * | 2022-08-10 | 2022-11-18 | 安徽光智科技有限公司 | Deposition equipment and thin film resistor uniformity debugging method |
-
2014
- 2014-05-23 CN CN201420268937.2U patent/CN203878204U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104409342A (en) * | 2014-11-20 | 2015-03-11 | 上海华虹宏力半导体制造有限公司 | Front metal evaporation method for wafer |
| CN115354308A (en) * | 2022-08-10 | 2022-11-18 | 安徽光智科技有限公司 | Deposition equipment and thin film resistor uniformity debugging method |
| CN115354308B (en) * | 2022-08-10 | 2024-02-13 | 安徽光智科技有限公司 | Deposition equipment and film resistor uniformity debugging method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Kashkarov et al. | Oxidation kinetics of Cr-coated zirconium alloy: Effect of coating thickness and microstructure | |
| CN106197718B (en) | A kind of film temperature sensor and preparation method | |
| CN106591787B (en) | A kind of preparation method of gradient thickness patterned film | |
| Bornholdt et al. | Characterization of the energy flux toward the substrate during magnetron sputter deposition of ZnO thin films | |
| CN105241569B (en) | A kind of metal-doped amorphous carbon film temperature-sensing element and preparation method thereof | |
| CN105950941B (en) | A kind of magnetic Skyrmion material | |
| CN203878204U (en) | Device for enhancing film uniformity on sputtering system | |
| Takahashi et al. | Enhancement of axial momentum lost to the radial wall by the upstream magnetic field in a helicon source | |
| CN104404468A (en) | Preparation device and preparation method of high-flux combined material | |
| Lee et al. | Exact solution for the generalized Bohm criterion in a two-ion-species plasma | |
| Crovetto et al. | On performance limitations and property correlations of Al-doped ZnO deposited by radio-frequency sputtering | |
| Liu et al. | A review and progress of multiphase flows in atmospheric and low pressure plasma spray advanced coating | |
| Sekerak et al. | Mode transitions in hall effect thrusters | |
| CN103305801B (en) | TiNi-based SMA (shape memory alloy) multilayer thin film and preparation method thereof | |
| Yukimura et al. | Metal ionization in a high-power pulsed sputtering penning discharge | |
| Lin et al. | Microstructure and hardness of nanocrystalline ferritic ODS alloy foil with high oxide content fabricated by EBPVD | |
| CN103590013B (en) | Method for predicting components by analytical process to prepare Fe-Ga alloy film | |
| Klusoň et al. | Measurement of the plasma and neutral gas flow velocities in a low-pressure hollow-cathode plasma jet sputtering system | |
| CN104347790B (en) | Manufacturing method and manufacturing device of planar thin-film thermoelectric device | |
| Ishida | Effects of grain size and Co addition on the transformation temperatures of Ti–Ni–Zr thin films | |
| Kozák | Effect of the target power density on high-power impulse magnetron sputtering of copper | |
| Zhang et al. | Development of preparation systems with K2CsSb photocathodes and study on the preparation process | |
| US20190271235A1 (en) | Systems, Devices, and/or Methods for Managing Ceramic Coatings | |
| Harder | PS-PVD processing varies coating architecture with processing parameters | |
| Maetani et al. | Combinatorial new facing targets sputtering |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |