CN115354308B - Deposition equipment and film resistor uniformity debugging method - Google Patents
Deposition equipment and film resistor uniformity debugging method Download PDFInfo
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- CN115354308B CN115354308B CN202210957510.2A CN202210957510A CN115354308B CN 115354308 B CN115354308 B CN 115354308B CN 202210957510 A CN202210957510 A CN 202210957510A CN 115354308 B CN115354308 B CN 115354308B
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- 230000008021 deposition Effects 0.000 title claims abstract description 25
- 238000000034 method Methods 0.000 title claims abstract description 19
- 238000000151 deposition Methods 0.000 claims abstract description 26
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910001935 vanadium oxide Inorganic materials 0.000 claims abstract description 20
- 238000004544 sputter deposition Methods 0.000 claims abstract description 11
- 239000007789 gas Substances 0.000 claims description 38
- 239000010408 film Substances 0.000 claims description 18
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 13
- 239000001301 oxygen Substances 0.000 claims description 13
- 229910052760 oxygen Inorganic materials 0.000 claims description 13
- 238000009826 distribution Methods 0.000 claims description 11
- 238000010586 diagram Methods 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 7
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 6
- 238000012360 testing method Methods 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 claims description 2
- 238000007789 sealing Methods 0.000 claims description 2
- 239000011797 cavity material Substances 0.000 abstract description 9
- 239000002699 waste material Substances 0.000 abstract description 6
- 239000013077 target material Substances 0.000 abstract description 5
- 238000012423 maintenance Methods 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000007740 vapor deposition Methods 0.000 abstract description 2
- 210000003437 trachea Anatomy 0.000 description 4
- 230000001105 regulatory effect Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/083—Oxides of refractory metals or yttrium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/544—Controlling the film thickness or evaporation rate using measurement in the gas phase
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5846—Reactive treatment
- C23C14/5853—Oxidation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
- C23C28/042—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material including a refractory ceramic layer, e.g. refractory metal oxides, ZrO2, rare earth oxides
Abstract
The invention belongs to the technical field of vapor deposition, and discloses deposition equipment which comprises a vacuum chamber, a sputtering power supply, a magnetic field device, a target and a base, wherein the magnetic field device is arranged at the top of the vacuum chamber, the target is arranged at the bottom of the magnetic field device, the base is arranged at the bottom of the vacuum chamber, and the target and the base are oppositely arranged and are respectively connected with the sputtering power supply; an air pipe supporting rod and a plurality of air pipes fixedly arranged on the air pipe supporting rod are arranged in a vacuum chamber between the target and the base, an air outlet of the air pipe is opposite to the base, an air inlet of the air pipe is communicated with an air source, and an air flow controller is arranged on each air pipe. The deposition equipment can adjust the resistance uniformity of the film without opening a cavity, and avoids time waste caused by opening the cavity and target material waste caused by target burning. The vanadium oxide film prepared by the deposition method can regulate and control the resistance uniformity in real time, reduce the process maintenance cost in the production process and improve the yield of products.
Description
Technical Field
The invention belongs to the technical field of vapor deposition, relates to deposition equipment and a film resistor uniformity debugging method, and in particular relates to deposition equipment for improving vanadium oxide resistor uniformity and a film resistor uniformity debugging method.
Background
The infrared detector can generate temperature change after absorbing infrared energy, the temperature change causes resistance change of the thermistor, and the change of the electric signal is converted into image information, so that a temperature distribution diagram of a test object can be obtained. Vanadium oxide has a high temperature coefficient of resistance and is widely used in the thermistor layer of an infrared detector. However, since vanadium oxide is as many as 13 different phases, the properties of each phase are very different and the stability range of any one phase is very narrow. Thus, it is very difficult to prepare a single phase of vanadium oxide.
The current methods for preparing vanadium oxide films include vacuum evaporation, magnetron sputtering, sol-gel, chemical vapor deposition, pulsed laser deposition and the like. The vanadium oxide film prepared by the magnetron sputtering method has compact structure, good control on components, no special gas is needed to participate in the reaction, and the method is suitable for mass production operation.
In the process of preparing the vanadium oxide film by the magnetron sputtering method, the metal vanadium target material is utilized to react with oxygen to generate vanadium oxide, and the resistance of the vanadium oxide film is regulated and controlled by regulating the flow of the oxygen. However, in the magnetron sputtering process, as the target material is consumed, the uniformity of the resistance of the vanadium oxide film is gradually deteriorated, and the re-cavity opening adjustment is required before the maintenance period is not reached, otherwise, the yield of the product is affected. After cavity opening maintenance is carried out, the bottom pressure and the target burning are required to be pumped again, the mode wastes time and consumes the service life of the target, the uniformity of the maintained resistance is not necessarily in line with the requirement, and even cavity opening adjustment is required to be carried out again.
Disclosure of Invention
Aiming at the problems in the prior art, one of the purposes of the invention is to provide a deposition device which has a simple structure, can realize the adjustment of the uniformity of the vanadium oxide resistor without opening a cavity in a vacuum environment, reduces the waste of target materials and time caused by opening the cavity, and improves the yield of products.
The invention further aims to provide a method for debugging the uniformity of the thin film resistor.
In order to achieve the purpose of the invention, the specific technical scheme is as follows:
the deposition equipment comprises a vacuum chamber, a sputtering power supply, a magnetic field device, a target and a base, wherein the magnetic field device is arranged at the top of the vacuum chamber, the target is arranged at the bottom of the magnetic field device, the base is arranged at the bottom of the vacuum chamber, and the target and the base are oppositely arranged and are respectively connected with the sputtering power supply;
the vacuum chamber between the target and the base is internally provided with an air pipe supporting rod and a plurality of air pipes fixedly arranged on the air pipe supporting rod, an air outlet of each air pipe is opposite to the base, an air inlet of each air pipe is communicated with an air source, and each air pipe is provided with an air flow controller.
Preferably, the air pipe support rod is provided with a plurality of air outlet holes which penetrate through the air supply pipe and are sealed with the outer wall of the air outlet pipe; the air outlet holes are uniformly distributed on the air pipe supporting rod.
Further preferably, the air outlet of the air pipe passes through the air outlet hole, and the extension length of the air outlet hole is not more than 5mm.
Preferably, the air pipe support rod is horizontally arranged in the vacuum chamber.
Preferably, the tracheal support rod is of a cross-shaped structure.
Further preferably, the air pipe support rod is a cross-shaped strip piece, the end part of the strip piece is fixed on the inner wall of the vacuum chamber, a through hole for the air supply pipe to pass through is formed in the side wall of the vacuum chamber, and the air pipe extends in from the through hole and extends out from the air outlet hole.
Further preferably, the air pipe support rod is a cross hollow pipe, the end part of the hollow pipe penetrates through the side wall of the vacuum chamber, the end part of the hollow pipe and the inner wall of the vacuum chamber are arranged in a sealing mode, the air outlet hole is formed in the bottom of the hollow pipe, and the air pipe extends into the hollow pipe from the end part of the hollow pipe and extends out of the air outlet hole.
Further preferably, 9 air outlet holes are formed in the air supporting rod, one air outlet hole is formed in the center of the cross-shaped structure, and two air outlet holes are uniformly formed in the air supporting rod at four ends of the cross-shaped structure respectively.
Further preferably, the interval between adjacent ventholes on the gas supporting rod is 4cm, the aperture of venthole is 6~8mm, and tracheal external diameter is 6~8mm, and the internal diameter of gas pipe is 2~6mm.
The invention also discloses a film resistor uniformity debugging method, which uses the deposition equipment and comprises the following steps:
(1) Preparing a substrate to be coated;
(2) Plating a silicon nitride substrate layer on the surface of the substrate by adopting a PECVD mode;
(3) Preparing a vanadium oxide film by adopting a magnetron sputtering technology;
(4) Carrying out resistance test on the vanadium oxide film to confirm the resistance distribution diagram;
(5) Adjusting the distribution of oxygen on the surface of the wafer through the MFC according to the resistance distribution diagram, wherein the position with high surface resistance reduces the gas flow of the gas pipe at the corresponding position, and the position with low surface resistance increases the gas flow, so that the total flow of all the gas pipes before and after adjustment is kept unchanged when the gas flow is adjusted;
(6) Repeating the steps (1) - (3), and testing the resistance uniformity of the vanadium oxide film until the debugging is qualified.
Compared with the prior art, the invention has the beneficial effects that:
(1) The deposition equipment can adjust the resistance uniformity of the film without opening a cavity, and avoids time waste caused by opening the cavity and target material waste caused by target burning.
(2) The vanadium oxide film prepared by the deposition method can regulate and control the resistance uniformity in real time, reduce the process maintenance cost in the production process and improve the yield of products.
Drawings
The accompanying drawings are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate the invention and together with the embodiments of the invention, serve to explain the invention. In the drawings:
FIG. 1 is a schematic view of a deposition apparatus according to the present invention.
Fig. 2 is a schematic perspective view of the tracheal support rod in embodiment 1.
Fig. 3 is a schematic view showing the three-dimensional structure of the tracheal support rod and the trachea in example 1.
Fig. 4 is a schematic view showing a schematic top view of the trachea support bar and trachea in example 1.
FIG. 5 is a process flow diagram of a method for tuning uniformity of sheet resistance according to the present invention.
FIG. 6 is a schematic diagram (A) of the gas flow rate and the electrical resistance distribution diagram (B) of the step (4) in example 1.
FIG. 7 is a schematic diagram of the gas flow rate (A) and the electrical resistance distribution diagram (B) of step (6) in example 1.
Detailed Description
The present invention will be described more fully hereinafter with reference to the accompanying drawings, in which preferred embodiments are shown, for the purpose of illustrating the invention, but the scope of the invention is not limited to the specific embodiments shown.
Unless defined otherwise, all technical and scientific terms used hereinafter have the same meaning as commonly understood by one of ordinary skill in the art. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the scope of the present invention.
Unless otherwise specifically indicated, the various raw materials, reagents, instruments, equipment and the like used in the present invention are commercially available or may be prepared by existing methods.
Example 1
As shown in fig. 1 to 4, the embodiment discloses a deposition apparatus, which includes a vacuum chamber 1, a sputtering power supply (not shown), a magnetic field device 6, a target 5 and a base 3, wherein the magnetic field device 6 is disposed at the top of the vacuum chamber 1, the target 5 is disposed at the bottom of the magnetic field device 6, the base 3 is disposed at the bottom of the vacuum chamber 1, and the target 5 and the base 3 are disposed opposite to each other and are connected with the sputtering power supply respectively.
In this embodiment, the air pipe support rod 4 is transversely arranged in the vacuum chamber 1 between the target 5 and the base 3, the air pipe support rod 4 is horizontally arranged in the vacuum chamber 1, the air pipe support rod 4 is a cross-shaped strip piece, the end part of the strip piece is fixed on the inner wall of the vacuum chamber 1, the side wall of the vacuum chamber 1 is provided with a through hole through which an air supply pipe 7 passes, 9 air outlet holes 8 which are right opposite to the base 3 are arranged on the strip piece, one end of the air pipe 7 passes through the air outlet holes 8 and extends out by no more than 5mm, the other end of the air pipe 7 passes through the through holes 8 and is connected with an air source, and each air pipe 7 is provided with an independent air flow controller.
In this embodiment, the air outlet holes 8 are uniformly distributed on the strip sheet, one air outlet hole 8 is arranged at the center of the cross-shaped structure, and two air outlet holes 8 are respectively arranged on four ends of the cross-shaped structure. The interval between the adjacent air outlet holes 8 is 4cm, the aperture of the air outlet holes 8 is 6mm, the outer diameter of the air pipe 7 is 6mm, and the inner diameter of the air pipe 7 is 4mm.
As shown in fig. 5, this embodiment also discloses a method for adjusting uniformity of a thin film resistor by using the deposition apparatus in embodiment 1, which specifically includes the following steps:
(1) Preparing a clean empty silicon wafer 2 to be coated;
(2) Plating a silicon nitride substrate layer on the surface of the empty silicon wafer 2 by adopting a PECVD mode, wherein the thickness is 0.6um;
(3) The vanadium oxide film is prepared by adopting the equipment, and the technological parameters are as follows: the sputtering power is 500-1000W; sputtering time: 300-1000 s, sputtering temperature: 100-200 ℃; argon flow rate: 90sccm; oxygen flow rate: 9sccm, as shown in FIG. 6-A, each oxygen flow meter had a flow of 1sccm, deposition pressure: 6mTorr;
(4) The resistance distribution and uniformity at 49 points were measured using a four-probe resistance tester, as shown in fig. 6-B. The average value of the resistance is 221.2KΩ, the uniformity is 8.25% (1 sigma), and the surface resistance of the wafer is distributed to be high on the right and low on the left;
(5) And changing the flow rate of oxygen at the corresponding position according to the resistance distribution. And at the position with high resistance, reducing the flow of oxygen at the corresponding position, otherwise, increasing the flow of oxygen. The right oxygen flow was reduced to 0.5sccm and the left oxygen flow was added to 1.5sccm as shown in FIG. 7-A, keeping the total oxygen flow unchanged.
(6) And (3) repeating the steps (1) - (3), and testing the uniformity of the resistance after the oxygen flow is regulated, wherein the average value of the resistance is 223.4KΩ, and the uniformity is reduced to 2.44% (1 sigma) as shown in the figure 7-B. The surface resistance of the wafer is lower on the right side and higher on the left side than before adjustment, and meets the expectations.
Example 2
The present embodiment provides a deposition apparatus, which is substantially the same as the deposition apparatus of embodiment 1 in that:
the tracheal bracing piece is the cross structure of constituteing by the hollow tube, the lateral wall of vacuum chamber is run through to the tip of hollow tube, the tip of hollow tube sets up with vacuum chamber's inner wall is sealed, sets up a plurality of ventholes towards the base on the bottom of hollow tube, and the venthole is passed to tracheal one end, and tracheal other end passes the port of hollow tube and is connected with the air supply, all sets up solitary gas flow controller on every trachea.
The above is only a preferred embodiment of the present invention, and is not intended to limit the present invention, but various modifications and variations can be made to the present invention by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (9)
1. The deposition equipment is characterized by comprising a vacuum chamber, a sputtering power supply, a magnetic field device, a target and a base, wherein the magnetic field device is arranged at the top of the vacuum chamber, the target is arranged at the bottom of the magnetic field device, the base is arranged at the bottom of the vacuum chamber, and the target and the base are oppositely arranged and are respectively connected with the sputtering power supply;
an air pipe supporting rod and a plurality of air pipes fixedly arranged on the air pipe supporting rod are arranged in a vacuum chamber between the target and the base, an air outlet of each air pipe is opposite to the base, an air inlet of each air pipe is communicated with an air source, and each air pipe is provided with an air flow controller;
the air pipe support rod is provided with a plurality of air outlet holes which penetrate through the air supply pipe and are sealed with the outer wall of the air outlet pipe;
the air pipe support rod is of a cross-shaped structure; one air outlet hole is arranged in the center of the cross-shaped structure.
2. The deposition apparatus of claim 1 wherein the gas outlet holes are uniformly distributed on the gas tube support rod.
3. The deposition apparatus of claim 2, wherein the gas outlet of the gas tube extends through the gas outlet aperture by a length of no more than 5mm.
4. The deposition apparatus of claim 1, wherein the tracheal support rod is horizontally disposed in the vacuum chamber.
5. The deposition apparatus of claim 4, wherein the gas pipe support rod is a cross-shaped strip, an end of the strip is fixed to an inner wall of the vacuum chamber, a through hole through which the gas supply pipe passes is provided in a side wall of the vacuum chamber, and the gas pipe extends from the through hole into and out of the gas outlet hole.
6. The deposition apparatus of claim 4, wherein the gas pipe support rod is a cross-shaped hollow pipe, an end of the hollow pipe penetrates through a side wall of the vacuum chamber, the end of the hollow pipe is arranged in a sealing manner with an inner wall of the vacuum chamber, the gas outlet hole is arranged at the bottom of the hollow pipe, and the gas pipe extends into the hollow pipe from the end of the hollow pipe and extends out of the gas outlet hole.
7. The deposition apparatus of claim 4, wherein 9 gas outlets are provided on the gas support rod, and two gas outlets are uniformly provided on the gas support rod having four ends of the cross-shaped structure, respectively.
8. The deposition apparatus of claim 7, wherein the gas support rods are spaced 4cm apart between adjacent gas outlet holes, the gas outlet holes have a diameter of 6-8 mm, the gas pipe has an outer diameter of 6-8 mm, and the gas pipe has an inner diameter of 2-6 mm.
9. A method for debugging uniformity of a thin film resistor, which uses the deposition equipment according to any one of claims 1 to 8, and is characterized by comprising the following steps:
(1) Preparing a substrate to be coated;
(2) Plating a silicon nitride substrate layer on the surface of the substrate by adopting a PECVD mode;
(3) Preparing a vanadium oxide film by adopting a magnetron sputtering technology;
(4) Carrying out resistance test on the vanadium oxide film to confirm the resistance distribution diagram;
(5) Adjusting the distribution of oxygen on the surface of the wafer through the MFC according to the resistance distribution diagram, wherein the position with high surface resistance reduces the gas flow of the gas pipe at the corresponding position, and the position with low surface resistance increases the gas flow, so that the total flow of all the gas pipes before and after adjustment is kept unchanged when the gas flow is adjusted;
(6) Repeating the steps (1) - (3), and testing the resistance uniformity of the vanadium oxide film until the debugging is qualified.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210957510.2A CN115354308B (en) | 2022-08-10 | 2022-08-10 | Deposition equipment and film resistor uniformity debugging method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210957510.2A CN115354308B (en) | 2022-08-10 | 2022-08-10 | Deposition equipment and film resistor uniformity debugging method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115354308A CN115354308A (en) | 2022-11-18 |
| CN115354308B true CN115354308B (en) | 2024-02-13 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN202210957510.2A Active CN115354308B (en) | 2022-08-10 | 2022-08-10 | Deposition equipment and film resistor uniformity debugging method |
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