CN111341689B - Gas flow control device and control method, and semiconductor device using the same - Google Patents
Gas flow control device and control method, and semiconductor device using the same Download PDFInfo
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- CN111341689B CN111341689B CN201811550076.6A CN201811550076A CN111341689B CN 111341689 B CN111341689 B CN 111341689B CN 201811550076 A CN201811550076 A CN 201811550076A CN 111341689 B CN111341689 B CN 111341689B
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Abstract
A gas flow control device and a control method and a semiconductor device using the device are provided, one end of the gas flow control device is connected with a gas source through a pipeline, the other end of the gas flow control device is connected with a reaction cavity in the semiconductor device through a pipeline and is used for introducing deposition gas or etching gas in the gas source into the reaction cavity and controlling the change of the gas flow flowing into the reaction cavity according to the process requirements, the gas flow control device comprises at least two mass flow controllers MFC which are arranged in parallel, the gas flow controller controls the first MFC to output gas with a first flow, the second MFC outputs gas with a second flow, the first flow is larger than 10 times of the second flow, the second flow output by the second MFC is gradually adjusted in a plurality of adjusting steps, and the minimum adjusting quantity delta of the gas flow of each step of the second flow is smaller than or equal to 20% of the second maximum rated flow. The invention utilizes the existing hardware equipment to obtain better gas flow control precision, optimizes the process technology and improves the product yield.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to a gas flow control device, a gas flow control method and semiconductor equipment applying the device.
Background
Certain processes in semiconductor manufacturing involve the reaction of gases with semiconductor substrates, such as deposition processes and etching processes, and the flow of gases can have a significant effect on the process results. In order to obtain a high yield of the produced semiconductor, the flow rate of the gas flowing into the reaction chamber must be precisely controlled, and particularly, as the integration degree of the semiconductor process is continuously improved, the error requirement on the gas flow rate is further improved.
A Mass Flow Controller (MFC) is a device for accurately measuring and controlling a gas Flow, and has a function of a Mass Flow meter, and more importantly, can automatically control the gas Flow, that is, a user can set the Flow as required, and the MFC automatically keeps the Flow constant at a set value, and even if there is a fluctuation in system pressure or a change in ambient temperature, the Flow does not deviate from the set value. Briefly, the mass flow controller is a flow stabilizer, a gas flow stabilizer that can be manually set or automatically controlled by a computer. Gas mass flow units are generally expressed in sccm (Standard customer centre per Minute) and slm (Standard lipid per Minute). This means that the indicated flow of such a meter is the flow in the normal state under different conditions of use. The standard state is defined as air pressure-101325 Pa (760 mm Hg); the temperature is-0 ℃ (273.15K).
Semiconductor devices are basically equipped with MFCs to control the flow of process gases to meet process requirements.
Assuming that the maximum rated flow of the MFC is S and the minimum resolution is a, the minimum adjustment amount T = sxa of the gas flow of the MFC, whereas the flow control accuracy of the MFC in the current market can reach +/-0.5% of the current flow, and such accuracy is far from meeting the requirements for some process technologies with higher requirements on the resolution of the gas flow variation. For example: in a certain process, the initial value of the gas flow is 24sccm, the gas flow is required to be gradually changed according to the rule of 24.1sccm,24.2sccm,24.3sccm, … and 24.9sccm, and finally the gas flow value reaches 25sccm, and the gas flow is increased by 0.1sccm each time compared with the previous one, for this situation, even if the largest rated flow is only 25sccm MFC, if the smallest adjustment quantity of the gas flow of 0.1sccm is to be obtained, the resolution is at least required to reach 0.1/25=0.4%, and the precision of the MFC which is not at present can be less than 0.5% of the largest rated flow. The hardware condition of the conventional MFC cannot meet the process requirement of gradually increasing 0.1sccm on the basis of 24sccm flow, and the flow error (0.12) of the MFC caused by insufficient precision is already larger than the required minimum adjustment amount (0.1), so that the precision is inevitably reduced, the error is increased, and the process result is influenced.
Disclosure of Invention
The invention provides a gas flow control device, a control method and semiconductor equipment using the device, which utilize the existing hardware equipment to obtain better gas flow control precision, optimize the process technology and improve the product yield.
In order to achieve the above object, the present invention provides a gas flow control device, one end of which is connected to a gas source through a pipeline, and the other end of which is connected to a reaction chamber in a semiconductor device through a pipeline, for introducing a reaction gas in the gas source into the reaction chamber, and controlling the change of the flow of the gas flowing into the reaction chamber according to process requirements;
the gas flow control device comprises: the mass flow controllers MFC are arranged in parallel, the air inlet end of each MFC is connected with the air source through a pipeline, and the air outlet end of each MFC is connected with the reaction cavity through a pipeline;
wherein the first MFC has a first maximum rated flow and the second MFC has a second maximum rated flow, wherein the first rated flow is greater than 10 times the second maximum rated flow;
controlling the first MFC to output a first flow of gas and the second MFC to output a second flow of gas, wherein the first flow is greater than 10 times the second flow;
and gradually adjusting the second flow output by the second MFC in a plurality of adjustment steps, wherein the minimum adjustment Δ of the gas flow for each step of the second flow is less than or equal to 20% of the second maximum rated flow.
The gas flow control device comprises N mass flow controllers MFC which are arranged in parallel, and when the value of the minimum adjustment quantity delta of the gas flow is smaller than 1/10N of the first flow, the Nth MFC is adjusted to generate the minimum adjustment quantity delta of the gas flow to be obtained, wherein the minimum adjustment quantity delta of the gas flow is larger than the minimum resolution of the adjustable flow of the Nth MFC, and N is larger than 2.
And an air inlet valve is arranged on an air inlet pipeline of each MFC and used for controlling the on-off of the MFC, and an air outlet valve is arranged on a main air outlet pipeline of all the MFCs and used for controlling the on-off of air communicated to the reaction cavity by the air flow control device.
The invention also provides a method for controlling the gas flow by using the gas flow control device, which controls a first MFC to output gas with a first flow and a second MFC to output gas with a second flow, wherein the first flow is more than 10 times of the second flow, and gradually adjusts the second flow output by the second MFC in a plurality of adjusting steps, wherein the minimum adjusting quantity delta of the gas flow of each step of the second flow is less than or equal to 20% of the second maximum rated flow.
When the value of the minimum adjustment quantity delta of the gas flow is less than1/10 of the first flow rate N Adjusting the Nth MFC to generate a minimum adjustment delta of the gas flow to be obtained, wherein the minimum adjustment delta of the gas flow is greater than the minimum resolution of the adjustable flow of the Nth MFC, N>2。
The on-off of each MFC is controlled by an air inlet valve arranged on the air inlet pipeline of each MFC, the air inlet valve of the selected MFC is opened, and the air inlet valve of the unselected MFC is closed.
The present invention also provides a semiconductor device comprising:
the semiconductor device comprises a reaction cavity and a gas supply device connected with the reaction cavity through a pipeline, wherein the gas supply device is used for supplying reaction gas to the reaction cavity, and the reaction cavity is used for processing a semiconductor substrate;
the gas supply device comprises:
a gas source for storing a reactant gas required for the treatment process.
The invention utilizes the existing hardware equipment to obtain better gas flow control precision, optimizes the process technology and improves the product yield.
Drawings
Fig. 1 is a schematic view of a semiconductor apparatus to which a gas flow rate control device is applied according to the present invention.
FIG. 2 is a schematic diagram of one embodiment of the present invention.
Fig. 3 is a schematic diagram of another embodiment of the present invention.
Detailed Description
The preferred embodiment of the present invention will be described in detail below with reference to fig. 1 to 3.
The invention provides a semiconductor device for effecting a reaction of a gas with a semiconductor substrate, in particular for use in an etching process and/or a deposition process.
The etching process may be a plasma etching process, which is a commonly used wafer etching process, and a proper gas is used as an etching gas, the etching gas is excited by an energy source, such as a high-frequency capacitive coupling RF generator or a high-frequency inductive coupling RF generator, to form a plasma, and then the plasma is used to etch a region without a photolithographic mask, so as to form a required pattern in a wafer.
The etching process can also be dry etching process or Bosch etching method for TSV etching.
The deposition process may be Chemical Vapor Deposition (CVD), which is a process in which a reaction substance chemically reacts under a gaseous condition to generate a solid substance deposited on a surface of a heated solid substrate, thereby preparing a solid material.
The Deposition process can also be Metal Organic Chemical Vapor Deposition (MOCVD), which is mainly used for preparing thin layer single crystal functional structural materials of III-V group compounds, II-VI group compounds or alloys, such as gallium nitride, gallium arsenide, indium phosphide, zinc oxide, etc. In general, the metal organic chemical vapor deposition uses a group II or group III metal organic source and a group VI or group V hydride source as reaction gases, and uses hydrogen or nitrogen as a carrier gas to perform vapor phase epitaxy on a substrate by a thermal decomposition reaction, thereby growing a thin layer single crystal material of various group II-VI compound semiconductors, group III-V compound semiconductors, and multiple solid solutions thereof.
As shown in fig. 1, the present invention provides a semiconductor device comprising: the reaction chamber 3 and a gas supply device connected with the reaction chamber 3 through a pipeline, the gas supply device provides deposition gas required by a deposition process or etching gas required by an etching process for the reaction chamber 3, and the reaction chamber 3 is used for realizing the reaction of the deposition gas or the etching gas and the semiconductor substrate.
The gas supply device comprises:
a gas source 2 for storing a deposition gas required for a deposition process or for storing an etching gas required for an etching process;
the gas flow control device 1 is connected with the gas source 1 and the reaction cavity 3 through pipelines, and is used for introducing deposition gas or etching gas in the gas source 1 into the reaction cavity 3 and controlling the change of gas flow according to the process requirements.
The gas flow rate control device 1 further comprises: and a plurality of mass flow controllers MFC101 arranged in parallel, wherein the air inlet end of each MFC is connected with the gas source 2 through a pipeline, and the air outlet end of each MFC is connected with the reaction cavity 3 through a pipeline. By selecting and setting the maximum rated flow and the minimum resolution of different MFCs, the total gas flow change rate of all MFCs can meet the requirements of the process technology.
Preferably, an air inlet valve 102 may be disposed on an air inlet pipeline of each MFC for controlling the on/off of the MFC, and an air outlet valve 103 may be disposed on a main air outlet pipeline of all MFCs for controlling the on/off of the gas from the gas flow control device 1 to the reaction chamber 3.
The first MFC has a first maximum rated flow and the second MFC has a second maximum rated flow, wherein the first rated flow is greater than 10 times the second maximum rated flow, the first MFC is controlled to output a first flow of gas and the second MFC outputs a second flow of gas, wherein the first flow is greater than 10 times the second flow, the second flow output by the second MFC is adjusted in steps over a plurality of adjustment steps, wherein the minimum adjustment Δ for the gas flow per step for the second flow is less than or equal to 20% of the second maximum rated flow.
When the value of the minimum adjustment quantity delta of the gas flow is less than 1/10 of the first flow N Adjusting the Nth MFC to generate a minimum adjustment delta of the gas flow to be obtained, wherein the minimum adjustment delta of the gas flow is greater than the minimum resolution of the adjustable flow of the Nth MFC, N>2。
More specifically, assuming that the initial value of the gas flow is I, the minimum adjustment amount of the gas flow to be obtained is Δ, and the final value of the gas flow is F, the value of the minimum adjustment amount of the gas flow Δ may be the first position (i.e., tenth position) after the decimal point, the second position (percentage position) after the decimal point, or the third position (thousandth position) after the decimal point, and may even reach the nth position (N is a natural number) after the decimal point. Accordingly, the gas flow control device 1 may comprise N MFCs 101 arranged in parallel, wherein a first MFC is used for obtaining an initial value I of a required gas flow, and the gas flow value of the first MFC may be fixedly set to a value within a range of a measuring range, and the value is equal to the initial value I; while the remaining MFCs are used to generate the minimum adjustment Δ of the gas flow to be obtained, so that the overall gas flow of the gas flow control device 1 changes from the initial gas flow I to the final gas flow F at intervals of the minimum adjustment Δ of the gas flow.
Further, when the value of the minimum adjustment amount Δ of the gas flow is the first position after the decimal point, the second MFC is used to generate the minimum adjustment amount Δ of the gas flow to be obtained, and the minimum adjustment amount T of the gas flow of the second MFC at this time 2 = maximum rated flow value S of second MFC 2 Minimum resolution A of the second MFC 2 And the minimum adjustment amount Δ of the gas flow to be obtained is the minimum adjustment amount T of the gas flow of the second MFC 2 Integral multiple of, the maximum rated flow value S of the second MFC 2 The value D is more than or equal to the value D, wherein the value D is not less than the gas flow final value F-the gas flow initial value I, namely the value D is the absolute value of the difference between the gas flow final value F and the gas flow initial value I; when the value of the minimum adjustment quantity delta of the gas flow is the second position after the decimal point, the third MFC is adopted to generate the minimum adjustment quantity delta of the gas flow to be obtained, and the minimum adjustment quantity T of the gas flow of the third MFC at the moment 3 = maximum rated flow value S of third MFC 3 Minimum resolution A of the third MFC 3 And the minimum adjustment amount Δ of the gas flow to be obtained is the minimum adjustment amount T of the gas flow of the third MFC 3 Integral multiple of (d), maximum rated flow value S of the third MFC 3 The final value of the gas flow is more than or equal to F-the initial value of the gas flow I; and so on, when the value of the minimum adjustment quantity delta of the gas flow is the (N-1) th position after the decimal point, the Nth MFC is adopted to generate the minimum adjustment quantity delta of the gas flow required to be obtained, and the minimum adjustment quantity T of the gas flow of the Nth MFC at the moment N = maximum rated flow value S of nth MFC N Minimum resolution A of XNth MFC N And the minimum adjustment amount Δ of the gas flow to be obtained is the minimum adjustment amount T of the gas flow of the Nth MFC N Integral multiple of (1), maximum rated flow value S of Nth MFC N Not less than the final gas flow value F-the initial gas flow value I.
As shown in FIG. 2, in one embodiment of the present invention, the gas flow rate is gradually increased from 24sccm to 25sccm, and the gas flow rate is gradually increased by 0.1sccm each time according to the rule of 24.1sccm,24.2sccm,24.3sccm, …, and 24.9 sccm. Since the value of the gas flow change to be obtained only reaches a fraction of a point, the value of the gas flow change to be obtained in the gas flow control device 1 can be achieved simply by using two MFCs, and for a device with N MFCs, only the inlet valves 102 on the inlet lines of the first MFC and the second MFC are opened, and the inlet valves on the inlet lines of the other MFCs are kept closed, and in a simpler manner, the gas flow control device 1 can only include two MFCs connected in parallel. The maximum rated flow of the first MFC can be 30 sccm-100 sccm, the minimum resolution is +/-0.5% of the maximum rated flow, the air inlet valve 102 on the air inlet pipeline of the first MFC is opened, the gas flow of the first MFC is adjusted to 24sccm, and then the first MFC fixedly provides gas with 24sccm flow in the whole process, so that a very accurate calibration value can be obtained. The maximum rated flow of the second MFC can be 20sccm, the minimum resolution is +/-0.5% of the maximum rated flow, the minimum adjustment amount of the gas flow of the second MFC is 0.1sccm, the gas inlet valve 102 on the gas inlet pipeline of the second MFC is opened, the gas outlet valve 103 on the gas outlet pipeline is opened, the gas flow of the second MFC is sequentially and incrementally adjusted from 0sccm flow according to the specified time by taking the minimum variation amount of 0.1sccm as a numerical interval, the gas flow variation value of the second MFC is incrementally changed according to the rule of 0.1sccm,0.2sccm,0.3sccm, …,0.9sccm and 1sccm, and the gas flow variation values of the first MFC and the second MFC are combined to finally obtain the gas flow variation value required to be obtained.
In a more effective way, the maximum rated flow and the minimum resolution of the first MFC are kept unchanged, the maximum rated flow of the second MFC can be 1sccm, the minimum resolution is +/-0.5% of the maximum rated flow, and the minimum adjustment amount of the gas flow of the second MFC is 0.005sccm, so that the calibration is more accurate. And gradually adjusting the gas flow of the second MFC from 0sccm flow at numerical intervals of 0.1sccm as a variation according to a specified time, so that the gas flow variation value of the second MFC is gradually changed according to the rule of 0.1sccm,0.2sccm,0.3sccm, …,0.9sccm and 1sccm. Finally, the gas flow change value required to be obtained is also obtained.
As shown in FIG. 3, in another embodiment of the present invention, the gas flow rate is gradually increased from 38sccm to 40sccm, and the gas flow rate is gradually increased by 0.05sccm each time according to the rule of 38.05sccm,38.10sccm,38.15sccm, …,39.90sccm and 39.95sccm. Since the value of the change in the gas flow rate to be obtained reaches two decimal places, the gas flow rate control device 1 needs to control the flow rate of the second decimal place in the value of the change in the gas flow rate to be obtained by using the third MFC. In order to expand the applicable scope, the gas flow control apparatus 1 having N MFCs is still used to implement the gas flow control in the present embodiment, and the combination of the first MFC and the third MFC is used to implement the specific gas flow control process, thereby keeping the intake valves 102 on the intake lines of the other MFCs except for the first MFC and the third MFC in the closed state. The maximum rated flow of the first MFC can be 30 sccm-100 sccm, the minimum resolution is +/-0.5% of the maximum rated flow, the air inlet valve 102 on the air inlet pipeline of the first MFC is opened, the gas flow of the first MFC is adjusted to 38sccm, the first MFC fixedly provides gas with the flow of 38sccm in the whole process, and a very accurate calibration value can be obtained. The maximum rated flow of the third MFC can be 10sccm, the minimum resolution is +/-0.5% of the maximum rated flow, the minimum adjustment quantity of the gas flow of the third MFC is 0.05sccm, the gas inlet valve 102 on the gas inlet pipeline of the third MFC is opened, the gas outlet valve 103 on the gas outlet pipeline is opened, the gas flow of the third MFC is sequentially and incrementally adjusted at the interval of the minimum variation quantity of 0.05sccm according to the specified time, the gas flow variation value of the third MFC is incrementally changed according to the rules of 0.05sccm,0.1sccm,0.15sccm, …,1.90sccm,1.95sccm and 2sccm, and the gas flow variation values of the first MFC and the second MFC are combined to finally obtain the gas flow variation value required to be obtained.
In another embodiment of the present invention, it is only necessary to gradually decrease the gas flow rate from 35sccm to 20sccm, each time by 1sccm less than the previous time. Since the value of the gas flow variation to be obtained relates to only integer bits, the requirement can be met simply with one MFC. The maximum rated flow of the first MFC is selected to be 100sccm or 200sccm, and the minimum resolution is +/-0.5% of the maximum rated flow, so that the gas flow variation value required to be obtained can be obtained.
The invention utilizes the existing hardware equipment to obtain better gas flow control precision, optimizes the process technology and improves the product yield.
While the present invention has been described in detail with reference to the preferred embodiments, it should be understood that the above description should not be taken as limiting the invention. Various modifications and alterations to this invention will become apparent to those skilled in the art upon reading the foregoing description. Accordingly, the scope of the invention should be determined from the following claims.
Claims (7)
1. The gas flow control device is characterized in that one end of the gas flow control device is connected with a gas source through a pipeline, the other end of the gas flow control device is connected with a reaction cavity in semiconductor equipment through a pipeline, and the gas flow control device is used for introducing reaction gas in the gas source into the reaction cavity and controlling the change of the gas flow flowing into the reaction cavity according to process requirements;
the gas flow control device comprises: the mass flow controllers MFC are arranged in parallel, the air inlet end of each MFC is connected with the same air source through a pipeline, and the air outlet end of each MFC is connected with the reaction cavity through a pipeline;
wherein the first MFC has a first maximum rated flow and the second MFC has a second maximum rated flow, wherein the first rated flow is greater than 10 times the second maximum rated flow;
controlling the first MFC to output a first flow of gas and the second MFC to output a second flow of gas, wherein the first flow is greater than 10 times the second flow;
and gradually adjusting the second flow output by the second MFC in a plurality of adjustment steps, wherein the minimum adjustment Δ of the gas flow for each step of the second flow is less than or equal to 20% of the second maximum rated flow.
2. A gas flow control device according to claim 1, characterised in that the gas flow control device comprises N mass flow controllers MFC arranged in parallel when the minimum adjustment Δ of the gas flow is less than 1/10 of the first flow N Adjusting the Nth MFC to generate a minimum adjustment delta of the gas flow to be obtained, wherein the minimum adjustment delta of the gas flow is greater than the minimum resolution of the adjustable flow of the Nth MFC, N>2。
3. A gas flow control device according to claim 1, characterised in that an inlet valve is provided in the inlet line of each MFC for controlling the opening and closing of the MFC in that an outlet valve is provided in the common outlet line of all MFCs for controlling the opening and closing of the gas flow control device to the reaction chamber.
4. A method for gas flow control using a gas flow control device according to any of claims 1-3, characterized in that a first MFC is controlled to output a first flow of gas and a second MFC outputs a second flow of gas, wherein the first flow is greater than 10 times the second flow, and the second flow output by the second MFC is adjusted stepwise in a plurality of adjustment steps, wherein the minimum adjustment Δ of the gas flow per step of the second flow is less than or equal to 20% of the second maximum rated flow.
5. The gas flow control method according to claim 4, wherein when the value of the minimum adjustment amount Δ of the gas flow is less than 1/10 of the first flow rate N Then, the Nth MFC is adjusted to generate the minimum adjustment Δ of the gas flow to be obtained, where the minimum adjustment Δ of the gas flow is greater than the minimum adjustment Δ of the adjustable flow of the Nth MFCResolution, N>2。
6. The gas flow control method according to claim 4, wherein the opening and closing of each MFC is controlled by an intake valve provided in an intake line of the MFC, and the intake valve of a selected MFC is opened and the intake valve of an unselected MFC is closed.
7. A semiconductor device, comprising:
the semiconductor device comprises a reaction cavity and a gas supply device connected with the reaction cavity through a pipeline, wherein the gas supply device is used for supplying reaction gas to the reaction cavity, and the reaction cavity is used for processing a semiconductor substrate;
the gas supply device comprises:
a gas source for storing a reaction gas required for a process;
a gas flow control device according to any of claims 1 to 3.
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| CN201811550076.6A CN111341689B (en) | 2018-12-18 | 2018-12-18 | Gas flow control device and control method, and semiconductor device using the same |
| TW108144731A TWI732373B (en) | 2018-12-18 | 2019-12-06 | Gas flow control device and control method and semiconductor equipment using the device |
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| CN201811550076.6A CN111341689B (en) | 2018-12-18 | 2018-12-18 | Gas flow control device and control method, and semiconductor device using the same |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1468441A (en) * | 2000-10-06 | 2004-01-14 | 兰姆研究公司 | Gas distribution apparatus for semiconductor processing |
| TW591686B (en) * | 2001-08-16 | 2004-06-11 | Applied Materials Inc | Process chamber having multiple gas distributors and method |
| CN108886001A (en) * | 2016-03-15 | 2018-11-23 | 应用材料公司 | Method and component for gas flow ratio control |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3830670B2 (en) * | 1998-09-03 | 2006-10-04 | 三菱電機株式会社 | Semiconductor manufacturing equipment |
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2018
- 2018-12-18 CN CN201811550076.6A patent/CN111341689B/en active Active
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1468441A (en) * | 2000-10-06 | 2004-01-14 | 兰姆研究公司 | Gas distribution apparatus for semiconductor processing |
| TW591686B (en) * | 2001-08-16 | 2004-06-11 | Applied Materials Inc | Process chamber having multiple gas distributors and method |
| CN108886001A (en) * | 2016-03-15 | 2018-11-23 | 应用材料公司 | Method and component for gas flow ratio control |
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| TW202024391A (en) | 2020-07-01 |
| TWI732373B (en) | 2021-07-01 |
| CN111341689A (en) | 2020-06-26 |
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