CN115354308A - Deposition equipment and thin film resistor uniformity debugging method - Google Patents
Deposition equipment and thin film resistor uniformity debugging method Download PDFInfo
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- CN115354308A CN115354308A CN202210957510.2A CN202210957510A CN115354308A CN 115354308 A CN115354308 A CN 115354308A CN 202210957510 A CN202210957510 A CN 202210957510A CN 115354308 A CN115354308 A CN 115354308A
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- 230000008021 deposition Effects 0.000 title claims abstract description 26
- 238000000034 method Methods 0.000 title claims abstract description 19
- 239000010409 thin film Substances 0.000 title description 6
- 238000000151 deposition Methods 0.000 claims abstract description 27
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910001935 vanadium oxide Inorganic materials 0.000 claims abstract description 21
- 238000004544 sputter deposition Methods 0.000 claims abstract description 10
- 239000007789 gas Substances 0.000 claims description 66
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 13
- 239000001301 oxygen Substances 0.000 claims description 13
- 229910052760 oxygen Inorganic materials 0.000 claims description 13
- 238000009826 distribution Methods 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 8
- 238000010586 diagram Methods 0.000 claims description 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 6
- 238000012360 testing method Methods 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 claims description 2
- 239000011797 cavity material Substances 0.000 abstract description 8
- 239000013077 target material Substances 0.000 abstract description 7
- 239000002699 waste material Substances 0.000 abstract description 6
- 238000012423 maintenance Methods 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 238000007740 vapor deposition Methods 0.000 abstract description 2
- 210000003437 trachea Anatomy 0.000 description 14
- 239000010408 film Substances 0.000 description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/083—Oxides of refractory metals or yttrium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/544—Controlling the film thickness or evaporation rate using measurement in the gas phase
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5846—Reactive treatment
- C23C14/5853—Oxidation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
- C23C28/042—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material including a refractory ceramic layer, e.g. refractory metal oxides, ZrO2, rare earth oxides
Abstract
The invention belongs to the technical field of vapor deposition, and discloses deposition equipment which comprises a vacuum chamber, a sputtering power supply, a magnetic field device, a target material and a base, wherein the magnetic field device is arranged at the top of the vacuum chamber; the vacuum chamber between the target material and the base is internally provided with a gas pipe supporting rod and a plurality of gas pipes fixedly arranged on the gas pipe supporting rod, the gas outlet of each gas pipe is opposite to the base, the gas inlet of each gas pipe is communicated with a gas source, and each gas pipe is provided with a gas flow controller. The deposition equipment can adjust the resistance uniformity of the film without opening a cavity, thereby avoiding time waste caused by opening the cavity and target material waste caused by target burning. The vanadium oxide film prepared by the deposition method can regulate and control the resistance uniformity in real time, reduce the process maintenance cost in the production process and improve the yield of products.
Description
Technical Field
The invention belongs to the technical field of vapor deposition, relates to deposition equipment and a film resistor uniformity debugging method, and particularly relates to deposition equipment for improving vanadium oxide resistor uniformity and a debugging method thereof.
Background
The infrared detector can generate temperature change after absorbing infrared energy, the resistance value of the thermistor is changed due to the temperature change, the change of the electric signal is converted into image information, and the temperature distribution diagram of the test object can be obtained. Vanadium oxide has a high temperature coefficient of resistance, and is widely applied to a thermistor layer of an infrared detector. However, since the oxides of vanadium have as many as 13 different phases, the phases differ widely in their properties and the stability range of any one phase is very narrow. Thus, it is very difficult to prepare single-phase vanadium oxide.
The methods currently used for preparing vanadium oxide films include vacuum evaporation, magnetron sputtering, sol-gel, chemical vapor deposition, pulsed laser deposition, and the like. The vanadium oxide film prepared by the magnetron sputtering method has compact structure and good controllability on components, does not need special gas to participate in reaction, and is suitable for batch production operation.
In the process of preparing the vanadium oxide film by the magnetron sputtering method, vanadium oxide is generated by reacting a metal vanadium target with oxygen, and the resistance of the vanadium oxide film is regulated and controlled by regulating the flow of the oxygen. However, in the magnetron sputtering process, the resistance uniformity of the vanadium oxide film gradually deteriorates with the consumption of the target material, and the chamber needs to be opened again before the maintenance period is not reached, otherwise the yield of the product is affected. After the cavity opening maintenance is carried out, the bottom pressing and the target burning are required to be extracted again, the mode wastes time and consumes more service life of the target material, the resistance uniformity after the maintenance does not necessarily meet the requirement, and even the cavity opening adjustment is required again.
Disclosure of Invention
In view of the problems in the prior art, an object of the present invention is to provide a deposition apparatus, which has a simple structure, and can debug the uniformity of vanadium oxide resistance without opening a cavity in a vacuum environment, thereby reducing the waste of target material and time caused by opening the cavity, and improving the yield of products.
Another objective of the present invention is to provide a method for adjusting uniformity of thin film resistance.
In order to realize the purpose of the invention, the specific technical scheme is as follows:
a deposition device comprises a vacuum chamber, a sputtering power supply, a magnetic field device, a target and a base, wherein the magnetic field device is arranged at the top of the vacuum chamber, the target is arranged at the bottom of the magnetic field device, the base is arranged at the bottom of the vacuum chamber, and the target and the base are oppositely arranged and are respectively connected with the sputtering power supply;
the vacuum chamber between the target and the base is internally provided with a gas pipe supporting rod and a plurality of gas pipes fixedly arranged on the gas pipe supporting rod, the gas outlet of each gas pipe is opposite to the base, the gas inlet of each gas pipe is communicated with a gas source, and each gas pipe is provided with a gas flow controller.
Preferably, the air pipe support rod is provided with a plurality of air outlet holes which are penetrated by the air supply pipe and are sealed with the outer wall of the air outlet pipe; the air outlet holes are uniformly distributed on the air pipe supporting rod.
Further preferably, the air outlet of the air pipe passes through the air outlet hole, and the extending length of the air outlet of the air pipe is not more than 5mm.
Preferably, the trachea support rod is horizontally arranged in the vacuum chamber.
Preferably, the trachea support rod is of a cross-shaped structure.
Further preferably, the gas pipe support rod is a cross-shaped strip, the end of the strip is fixed on the inner wall of the vacuum chamber, the side wall of the vacuum chamber is provided with a through hole through which the gas supply pipe passes, and the gas pipe extends into the through hole and extends out of the gas outlet hole.
Further preferably, the trachea bracing piece is the cross-shaped hollow tube, the tip of hollow tube runs through the lateral wall of vacuum chamber, the tip of hollow tube sets up with the inner wall seal of vacuum chamber, the venthole sets up in the hollow tube bottom, the trachea stretches into, stretches out from the venthole from the tip of hollow tube.
Further preferably, 9 air outlet holes are formed in the gas supporting rod, one air outlet hole is formed in the center of the cross-shaped structure, and two air outlet holes are uniformly formed in the gas supporting rods at the four ends of the cross-shaped structure respectively.
More preferably, the interval between adjacent air outlets on the air support rod is 4cm, the aperture of each air outlet is 6-8 mm, the outer diameter of the air pipe is 6-8 mm, and the inner diameter of the air pipe is 2-6 mm.
The invention also discloses a method for debugging the uniformity of the thin film resistor, which uses the deposition equipment and comprises the following steps:
(1) Preparing a substrate to be coated;
(2) Plating a silicon nitride substrate layer on the surface of the substrate in a PECVD mode;
(3) Preparing a vanadium oxide film by adopting a magnetron sputtering technology;
(4) Carrying out resistance test on the vanadium oxide film, and confirming a resistance distribution diagram;
(5) Adjusting the distribution of oxygen on the surface of the wafer through an MFC (micro-fuel cell) according to the resistance distribution diagram, reducing the gas flow of a gas pipe at a corresponding position at a position with high surface resistance, increasing the gas flow at a position with low surface resistance, and keeping the total flow of all gas pipes before and after adjustment unchanged when adjusting the gas flow;
(6) And (4) repeating the steps (1) to (3), and testing the resistance uniformity of the vanadium oxide film until the vanadium oxide film is qualified in debugging.
Compared with the prior art, the invention has the beneficial effects that:
(1) The deposition equipment can adjust the resistance uniformity of the film without opening a cavity, thereby avoiding time waste caused by opening the cavity and target material waste caused by target burning.
(2) The vanadium oxide film prepared by the deposition method can regulate and control the resistance uniformity in real time, reduce the process maintenance cost in the production process and improve the yield of products.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
FIG. 1 is a schematic view of a deposition apparatus according to the present invention.
Fig. 2 is a schematic perspective view of a gas tube support rod in example 1.
Fig. 3 is a schematic perspective view of the gas tube support rod and the gas tube in example 1.
Fig. 4 is a schematic top view of the support rod and the air tube in embodiment 1.
FIG. 5 is a process flow diagram of the method for tuning uniformity of thin film resistance according to the present invention.
FIG. 6 is a schematic view (A) of the gas flow rate and a distribution diagram (B) of the resistance in step (4) in example 1.
FIG. 7 is a schematic view (A) of the gas flow rate and a distribution view (B) of the resistance in step (6) in example 1.
Detailed Description
In order to facilitate an understanding of the invention, reference will now be made in detail to the present preferred embodiments of the invention, examples of which are illustrated in the accompanying drawings, and the scope of the invention is not limited to the specific embodiments described below.
Unless otherwise defined, all terms of art used hereinafter have the same meaning as commonly understood by one of ordinary skill in the art. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the scope of the present invention.
Unless otherwise specifically stated, various raw materials, reagents, instruments, equipment and the like used in the present invention are commercially available or can be prepared by existing methods.
Example 1
As shown in fig. 1 to 4, the present embodiment discloses a deposition apparatus, which includes a vacuum chamber 1, a sputtering power supply (not shown), a magnetic field device 6, a target 5 and a base 3, wherein the magnetic field device 6 is disposed at the top of the vacuum chamber 1, the target 5 is disposed at the bottom of the magnetic field device 6, the base 3 is disposed at the bottom of the vacuum chamber 1, and the target 5 and the base 3 are disposed opposite to each other and are respectively connected to the sputtering power supply.
In this embodiment, horizontal trachea bracing piece 4 in vacuum chamber 1 between target 5 and the base 3, 4 levels of trachea bracing piece are horizontal in vacuum chamber 1, trachea bracing piece 4 is the long strip of cross, the end fixing of long strip is at the inner wall of vacuum chamber 1, the lateral wall of vacuum chamber 1 sets up the through-hole that just air supply pipe 7 passed, set up 9 ventholes 8 just to base 3 on the long strip, venthole 8 is passed and stretches out no more than 5mm to trachea 7's one end, trachea 7's the other end passes through-hole 8 and is connected with the air supply, all set up solitary gas flow controller on every trachea 7.
In this embodiment, venthole 8 evenly distributed is on rectangular piece, and a venthole 8 sets up the center at cross structure, and four ends of cross structure go up to set up two ventholes 8 respectively. The interval between adjacent ventholes 8 is 4cm, and the aperture of venthole 8 is 6mm, and the external diameter of trachea 7 is 6mm, and the internal diameter of trachea 7 is 4mm.
As shown in fig. 5, this embodiment further discloses a method for debugging the uniformity of the thin film resistor by using the deposition apparatus in embodiment 1, which specifically includes the following steps:
(1) Preparing a clean empty silicon wafer 2 to be coated;
(2) Plating a silicon nitride substrate layer on the surface of the hollow silicon wafer 2 in a PECVD mode, wherein the thickness of the silicon nitride substrate layer is 0.6um;
(3) The vanadium oxide film is prepared by adopting the equipment, and the process parameters are as follows: the sputtering power is 500 to 1000W; sputtering time: 300 to 1000s, sputtering temperature: 100-200 ℃; argon flow: 90sccm; oxygen flow rate: 9sccm, as shown in FIG. 6-A, the flow rate of each oxygen flow meter was 1sccm, the deposition pressure: 6mTorr;
(4) Using a four-probe resistance tester, the resistance distribution and uniformity at 49 points were measured, as shown in FIG. 6-B. The average value of the resistance is 221.2 Komega, the uniformity is 8.25 percent (1 sigma), and the surface resistance distribution of the wafer is high at the right side and low at the left side;
(5) And changing the flow of oxygen at the corresponding position according to the resistance distribution. And at the position with high resistance, reducing the flow of oxygen at the corresponding position, and otherwise, increasing the flow of oxygen. The right oxygen flow rate was reduced to 0.5sccm and the left oxygen flow rate was added to 1.5sccm as shown in FIG. 7-A, maintaining the total oxygen flow rate constant.
(6) And (4) repeating the steps (1) to (3), and testing the resistance uniformity after the oxygen flow is adjusted, wherein as shown in fig. 7-B, the average value of the resistance is 223.4 Komega, and the uniformity is reduced to 2.44 percent (1 sigma). The surface resistance of the wafer is lower on the right side and higher on the left side than before adjustment, which is in accordance with the expectation.
Example 2
The present embodiment provides a deposition apparatus, which has substantially the same structure as the deposition apparatus in embodiment 1, except that:
the trachea bracing piece is the cruciform structure of compriseing the hollow tube, the lateral wall of vacuum chamber is run through to the tip of hollow tube, the tip of hollow tube sets up with the inner wall seal of vacuum chamber, sets up a plurality of ventholes towards the base on the bottom of hollow tube, and the venthole is passed to tracheal one end, and the port that the hollow tube was passed to the tracheal other end is connected with the air supply, all sets up solitary gas flow controller on every trachea.
The above is only a preferred embodiment of the present invention, and is not intended to limit the present invention, and various modifications and changes will occur to those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (10)
1. The deposition equipment is characterized by comprising a vacuum chamber, a sputtering power supply, a magnetic field device, a target and a base, wherein the magnetic field device is arranged at the top of the vacuum chamber, the target is arranged at the bottom of the magnetic field device, the base is arranged at the bottom of the vacuum chamber, and the target and the base are oppositely arranged and are respectively connected with the sputtering power supply;
the vacuum chamber between the target and the base is internally provided with a gas pipe supporting rod and a plurality of gas pipes fixedly arranged on the gas pipe supporting rod, the gas outlet of each gas pipe is opposite to the base, the gas inlet of each gas pipe is communicated with a gas source, and each gas pipe is provided with a gas flow controller.
2. The deposition apparatus as claimed in claim 1, wherein the gas pipe support rod is provided with a plurality of gas outlet holes through which the gas supply pipe passes and which are hermetically sealed with an outer wall of the gas outlet pipe; the air outlet holes are uniformly distributed on the air pipe supporting rod.
3. The deposition apparatus of claim 2, wherein the gas outlet of the gas pipe passes through the gas outlet hole and protrudes by a length of not more than 5mm.
4. The deposition apparatus of claim 1, wherein the gas tube support bar is horizontally disposed across the vacuum chamber.
5. The deposition apparatus of claim 1, wherein the gas tube support rod is a cross-shaped structure.
6. The deposition apparatus of claim 5, wherein the gas tube support rods are cross-shaped strips, the ends of the strips being secured to the inner wall of the vacuum chamber, the side wall of the vacuum chamber being provided with through-holes through which the gas tube passes, the gas tube extending from the through-holes into the gas outlet.
7. The deposition apparatus of claim 5, wherein the gas tube support rod is a cross-shaped hollow tube, the end of the hollow tube extending through the side wall of the vacuum chamber, the end of the hollow tube being sealingly disposed against the inner wall of the vacuum chamber, the gas outlet being disposed at the bottom of the hollow tube, and the gas tube extending into and out of the end of the hollow tube.
8. The deposition apparatus according to claim 5, wherein 9 gas outlet holes are provided in the gas support rods, one gas outlet hole is provided in the center of the cross-shaped structure, and two gas outlet holes are uniformly provided in the gas support rods at the four ends of the cross-shaped structure, respectively.
9. The deposition apparatus as claimed in claim 8, wherein the gas support rod has 4cm spacing between adjacent air outlets, the air outlets have a diameter of 6 to 8mm, the air pipes have an outer diameter of 6 to 8mm, and the air pipes have an inner diameter of 2 to 6mm.
10. A method for debugging the uniformity of film resistance by using the deposition equipment as claimed in any one of claims 1 to 9, which is characterized by comprising the following steps:
(1) Preparing a substrate to be coated;
(2) Plating a silicon nitride substrate layer on the surface of the substrate in a PECVD mode;
(3) Preparing a vanadium oxide film by adopting a magnetron sputtering technology;
(4) Carrying out resistance test on the vanadium oxide film, and confirming a resistance distribution diagram;
(5) Adjusting the distribution of oxygen on the surface of the wafer through an MFC (micro-fluidic circuit) according to the resistance distribution map, reducing the gas flow of a gas pipe at a corresponding position at a position with high surface resistance, increasing the gas flow at a position with low surface resistance, and keeping the total flow of all gas pipes before and after adjustment unchanged when the gas flow is adjusted;
(6) And (4) repeating the steps (1) to (3), and testing the resistance uniformity of the vanadium oxide film until the vanadium oxide film is qualified in debugging.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210957510.2A CN115354308B (en) | 2022-08-10 | 2022-08-10 | Deposition equipment and film resistor uniformity debugging method |
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| CN202210957510.2A CN115354308B (en) | 2022-08-10 | 2022-08-10 | Deposition equipment and film resistor uniformity debugging method |
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| CN115354308A true CN115354308A (en) | 2022-11-18 |
| CN115354308B CN115354308B (en) | 2024-02-13 |
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Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20040099891A (en) * | 2003-05-20 | 2004-12-02 | 삼성전자주식회사 | Method of forming a thin film having a uniform thickness in a semiconductor device and Apparatus for performing the same |
| CN203878204U (en) * | 2014-05-23 | 2014-10-15 | 北方广微科技有限公司 | Device for enhancing film uniformity on sputtering system |
| CN209890725U (en) * | 2019-02-14 | 2020-01-03 | 上海陛通半导体能源科技股份有限公司 | Equipment for physical vapor deposition of metal oxide or nitride film |
| CN110923644A (en) * | 2020-02-12 | 2020-03-27 | 上海陛通半导体能源科技股份有限公司 | Physical vapor deposition apparatus for reactive sputtering |
| CN111254383A (en) * | 2020-03-25 | 2020-06-09 | 上海陛通半导体能源科技股份有限公司 | Physical vapor deposition equipment for improving uniformity of reactive sputtering film |
| CN112981350A (en) * | 2021-04-08 | 2021-06-18 | 浙江艾微普科技有限公司 | Method and apparatus for uniform thin film deposition |
| CN214458275U (en) * | 2020-10-16 | 2021-10-22 | 上海新微技术研发中心有限公司 | Physical vapor deposition apparatus |
| CN113930735A (en) * | 2021-10-15 | 2022-01-14 | 无锡尚积半导体科技有限公司 | Vapor deposition equipment for improving thickness uniformity of vanadium oxide film and vapor deposition method thereof |
| CN114250444A (en) * | 2021-12-01 | 2022-03-29 | 安徽光智科技有限公司 | Method for plasma-assisted chemical vapor deposition of high-purity tungsten sputtering target material |
| CN114381692A (en) * | 2020-10-16 | 2022-04-22 | 上海新微技术研发中心有限公司 | Physical vapor deposition apparatus |
-
2022
- 2022-08-10 CN CN202210957510.2A patent/CN115354308B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20040099891A (en) * | 2003-05-20 | 2004-12-02 | 삼성전자주식회사 | Method of forming a thin film having a uniform thickness in a semiconductor device and Apparatus for performing the same |
| CN203878204U (en) * | 2014-05-23 | 2014-10-15 | 北方广微科技有限公司 | Device for enhancing film uniformity on sputtering system |
| CN209890725U (en) * | 2019-02-14 | 2020-01-03 | 上海陛通半导体能源科技股份有限公司 | Equipment for physical vapor deposition of metal oxide or nitride film |
| CN110923644A (en) * | 2020-02-12 | 2020-03-27 | 上海陛通半导体能源科技股份有限公司 | Physical vapor deposition apparatus for reactive sputtering |
| CN111254383A (en) * | 2020-03-25 | 2020-06-09 | 上海陛通半导体能源科技股份有限公司 | Physical vapor deposition equipment for improving uniformity of reactive sputtering film |
| CN214458275U (en) * | 2020-10-16 | 2021-10-22 | 上海新微技术研发中心有限公司 | Physical vapor deposition apparatus |
| CN114381692A (en) * | 2020-10-16 | 2022-04-22 | 上海新微技术研发中心有限公司 | Physical vapor deposition apparatus |
| CN112981350A (en) * | 2021-04-08 | 2021-06-18 | 浙江艾微普科技有限公司 | Method and apparatus for uniform thin film deposition |
| CN113930735A (en) * | 2021-10-15 | 2022-01-14 | 无锡尚积半导体科技有限公司 | Vapor deposition equipment for improving thickness uniformity of vanadium oxide film and vapor deposition method thereof |
| CN114250444A (en) * | 2021-12-01 | 2022-03-29 | 安徽光智科技有限公司 | Method for plasma-assisted chemical vapor deposition of high-purity tungsten sputtering target material |
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