CN203238326U - Chemical vapor deposition device for hot filaments - Google Patents
Chemical vapor deposition device for hot filaments Download PDFInfo
- Publication number
- CN203238326U CN203238326U CN 201320140915 CN201320140915U CN203238326U CN 203238326 U CN203238326 U CN 203238326U CN 201320140915 CN201320140915 CN 201320140915 CN 201320140915 U CN201320140915 U CN 201320140915U CN 203238326 U CN203238326 U CN 203238326U
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- hot
- deposition device
- coating chamber
- heated filament
- cvd coating
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Abstract
The utility model discloses a chemical vapor deposition device for hot filaments. The chemical vapor deposition device comprises an electric control cabinet which is respectively connected with a CVD coating chamber, a water chiller and an air source through a control line; the CVD coating chamber is respectively connected with the water chiller and the air source and further connected with a vacuum forming system. The device disclosed by the utility model solves the problem that the coating quality is influenced by unevenness of the temperature above a substrate in the prior art; the hot filaments, as well as the hot filaments and the substrate are kept to be parallel to each other, so that a uniform temperature field is ensured above a substrate platform, the service life of the hot filaments is prolonged, the consistency and uniformity of the deposition speed and coating formation are improved, the evenness of the coating is lower than 3%, and the ultimate vacuum index of the vacuum formation system adopted by the device is as high as 2x10(-5)Pa, so that the coating purity is ensured, and the coating quality is improved.
Description
Technical field
The utility model has related to a kind of hot-wire chemical gas-phase deposition device, especially a kind of high vacuum low profile thermal wire chemical vapor deposition film preparation facilities.
Background technology
Hot-wire chemical gas-phase deposition is a kind of type material preparation method, and extensively Ying Yu is in the preparation of various novel materials.The product structure of the leading producer of domestic technique is generally and adopts vertical button fly front structure at present, its heated filament heating system is all without automatic fastening function, when heated filament is heated to 2000-2500oC, heated filament can bend because being heated, metamorphism, fragile and cause substrate top non-uniform temperature, affect coating quality; Underlayer temperature is 600-1000oC; When adopting double-deck refrigeration modes, sedimentation rate is 1-10 μ m/h; Chip bench liftable, rotation; Highest attainable vacuum is 2 * 10-
5Pa; The plated film uniformity coefficient is less than 5%.
The utility model content
Technical problem to be solved in the utility model provides a kind of hot-wire chemical gas-phase deposition device, can the Effective Raise sedimentation rate and consistence, the homogeneity of film forming, and guarantee the uniformity coefficient of plated film, and prolonged the work-ing life of heated filament.
In order to solve the problems of the technologies described above, the technical scheme that the utility model adopts is:
A kind of hot-wire chemical gas-phase deposition device, comprise electrical control cubicles, described electrical control cubicles is connected with respectively CVD coating chamber, cooling-water machine and source of the gas by control line, and described CVD coating chamber is connected with cooling-water machine, source of the gas respectively, also is connected with vacuum acquiring system on the described CVD coating chamber.
Aforesaid hot-wire chemical gas-phase deposition device is characterized in that: described CVD coating chamber is comprised of vacuum chamber, chip bench and heated filament heating system, and described electrical control cubicles is connected with the heated filament heating system.
Aforesaid hot-wire chemical gas-phase deposition device is characterized in that: described heated filament heating system comprises that air inlet pole plate and heated filament grid form, and described heated filament grid are installed between described air inlet pole plate and the chip bench.
Aforesaid hot-wire chemical gas-phase deposition device is characterized in that: described heated filament grid comprise framework, and the two ends of described framework are equipped with the belt tension electrode strip, are provided with some heated filaments between the described belt tension electrode strip.
Aforesaid hot-wire chemical gas-phase deposition device is characterized in that: described CVD coating chamber is connected with described water cooling unit by hard polvinyl choride pipe.
Aforesaid hot-wire chemical gas-phase deposition device is characterized in that: described CVD coating chamber is connected with described source of the gas by the polishing stainless steel pipe.
Aforesaid hot-wire chemical gas-phase deposition device is characterized in that: described CVD coating chamber is connected with described vacuum acquiring system by corrugated tube.
The beneficial effects of the utility model are: by making between heated filament, all keeping being parallel to each other between heated filament and the substrate, guaranteed that there is uniform temperature field the chip bench top, increased the work-ing life of heated filament, consistence, the homogeneity of sedimentation rate and film forming have been improved, make the plated film uniformity coefficient less than 3%, and the highest attainable vacuum index of the vacuum acquiring system that adopts of the utility model can reach 2 * 10-
5Pa, thus film forming purity guaranteed, improved coating quality.
Description of drawings
Fig. 1 is the structure principle chart of the utility model hot-wire chemical gas-phase deposition device;
Fig. 2 is the structural representation of the utility model heated filament grid.
Embodiment
Below in conjunction with Figure of description, the utility model is further described.
As depicted in figs. 1 and 2, a kind of hot-wire chemical gas-phase deposition device, comprise electrical control cubicles, described electrical control cubicles is connected with respectively the CVD coating chamber by control line, cooling-water machine and source of the gas, described CVD coating chamber respectively with cooling-water machine, source of the gas is connected, also be connected with vacuum acquiring system on the described CVD coating chamber, described CVD coating chamber is by vacuum chamber, chip bench and heated filament heating system form, described electrical control cubicles is connected with the heated filament heating system, described heated filament heating system comprises that air inlet pole plate and heated filament grid form, and described heated filament grid are installed in (not shown) between described air inlet pole plate and the chip bench.
The heated filament grid comprise framework 4, the two ends of described framework 4 are equipped with belt tension electrode strip 3, be fixed with some heated filaments 2 by the heated filament gripping unit between the described belt tension electrode strip 3, hang the weight (not shown) at every heated filament 2, prevent that the waist phenomenon of collapsing from high temperature appearring in heated filament 2.
When the hot-wire temperature is heated to 2000oC-2500oC, be installed at locking latches on the heated filament grid with automatic tension heated filament 2, guarantee between heated filament, parallel to each other between substrate and heated filament, guaranteed that there is uniform temperature field the chip bench top, 2 work-ing lifes of heated filament have been increased, improved the consistence of sedimentation rate and film forming, homogeneity, and the plated film uniformity coefficient is less than 3%.And this installs its vacuum acquiring system employing mechanical pump+molecular pump structure, and its highest attainable vacuum index can reach 2 * 10
-5Pa, thus film forming purity guaranteed, improved coating quality.
The CVD coating chamber is connected with described water cooling unit by hard polvinyl choride pipe, and the CVD coating chamber is connected with described source of the gas by the polishing stainless steel pipe, and the CVD coating chamber is connected with described vacuum acquiring system by corrugated tube.
The below further specifies the working process of this device as example to produce Graphene:
In sum, a kind of hot-wire chemical gas-phase deposition device that the utility model provides can the Effective Raise sedimentation rate and consistence, the homogeneity of film forming, guarantees the uniformity coefficient of plated film, and has prolonged the work-ing life of heated filament.
More than show and described ultimate principle of the present utility model, principal character and advantage.The technician of the industry should understand; the utility model is not restricted to the described embodiments; that describes in above-described embodiment and the specification sheets just illustrates principle of the present utility model; under the prerequisite that does not break away from the utility model spirit and scope; the utility model also has various changes and modifications, and these changes and improvements all fall in claimed the utility model scope.The claimed scope of the utility model is by appending claims and equivalent circle thereof.
Claims (7)
1. hot-wire chemical gas-phase deposition device, comprise electrical control cubicles, it is characterized in that: described electrical control cubicles is connected with respectively CVD coating chamber, cooling-water machine and source of the gas by control line, and described CVD coating chamber is connected with cooling-water machine, source of the gas respectively, also is connected with vacuum acquiring system on the described CVD coating chamber.
2. hot-wire chemical gas-phase deposition device according to claim 1, it is characterized in that: described CVD coating chamber is comprised of vacuum chamber, chip bench and heated filament heating system, and described electrical control cubicles is connected with the heated filament heating system.
3. hot-wire chemical gas-phase deposition device according to claim 2 is characterized in that: described heated filament heating system comprises that air inlet pole plate and heated filament grid form, and described heated filament grid are installed between described air inlet pole plate and the chip bench.
4. hot-wire chemical gas-phase deposition device according to claim 3, it is characterized in that: described heated filament grid comprise framework, and the two ends of described framework are equipped with the belt tension electrode strip, are provided with some heated filaments between the described belt tension electrode strip.
5. the described hot-wire chemical gas-phase deposition device of any one according to claim 1-4, it is characterized in that: described CVD coating chamber is connected with described water cooling unit by hard polvinyl choride pipe.
6. hot-wire chemical gas-phase deposition device according to claim 5, it is characterized in that: described CVD coating chamber is connected with described source of the gas by the polishing stainless steel pipe.
7. hot-wire chemical gas-phase deposition device according to claim 6, it is characterized in that: described CVD coating chamber is connected with described vacuum acquiring system by corrugated tube.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320140915 CN203238326U (en) | 2013-03-26 | 2013-03-26 | Chemical vapor deposition device for hot filaments |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320140915 CN203238326U (en) | 2013-03-26 | 2013-03-26 | Chemical vapor deposition device for hot filaments |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203238326U true CN203238326U (en) | 2013-10-16 |
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ID=49315643
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201320140915 Expired - Fee Related CN203238326U (en) | 2013-03-26 | 2013-03-26 | Chemical vapor deposition device for hot filaments |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203238326U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103952686A (en) * | 2014-05-23 | 2014-07-30 | 北京大学 | Break-resistant hot filament chemical vapor deposition system in preparation of large-size BDD electrode |
| CN106191816A (en) * | 2016-07-06 | 2016-12-07 | 廊坊西波尔钻石技术有限公司 | A kind of hot-wire chemical gas-phase deposition stove turnover gas gas path device and method |
| CN107400875A (en) * | 2017-07-12 | 2017-11-28 | 华中科技大学 | A kind of hot-filament chemical vapor deposition equipment |
-
2013
- 2013-03-26 CN CN 201320140915 patent/CN203238326U/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103952686A (en) * | 2014-05-23 | 2014-07-30 | 北京大学 | Break-resistant hot filament chemical vapor deposition system in preparation of large-size BDD electrode |
| CN103952686B (en) * | 2014-05-23 | 2016-02-17 | 北京大学 | A kind of anti-fracture hot-wire chemical gas-phase deposition system and the application in the preparation of large size BDD electrode |
| CN106191816A (en) * | 2016-07-06 | 2016-12-07 | 廊坊西波尔钻石技术有限公司 | A kind of hot-wire chemical gas-phase deposition stove turnover gas gas path device and method |
| CN107400875A (en) * | 2017-07-12 | 2017-11-28 | 华中科技大学 | A kind of hot-filament chemical vapor deposition equipment |
| CN107400875B (en) * | 2017-07-12 | 2019-10-08 | 华中科技大学 | A kind of hot-filament chemical vapor deposition equipment |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20131016 Termination date: 20180326 |
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| CF01 | Termination of patent right due to non-payment of annual fee |