CN106191816A - A kind of hot-wire chemical gas-phase deposition stove turnover gas gas path device and method - Google Patents
A kind of hot-wire chemical gas-phase deposition stove turnover gas gas path device and method Download PDFInfo
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- CN106191816A CN106191816A CN201610528450.7A CN201610528450A CN106191816A CN 106191816 A CN106191816 A CN 106191816A CN 201610528450 A CN201610528450 A CN 201610528450A CN 106191816 A CN106191816 A CN 106191816A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45591—Fixed means, e.g. wings, baffles
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- Chemical & Material Sciences (AREA)
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- Chemical Kinetics & Catalysis (AREA)
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- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
A kind of hot-wire chemical gas-phase deposition stove turnover gas gas path device and method, belong to hot-wire chemical gas-phase deposition technical field.The angle position, upside of circular cylindrical cavity is along 45 degree of welded corner joint air flap, air flap forms an airtight inlet plenum with chamber top corner part, gas baffle plate is distributed air inlet, inlet plenum connects air inlet, and the bottom in the vacuum chamber of circular cylindrical cavity connects electrode column, aspirating chamber, and aspirating chamber connects lifting spindle and bleeding point, lifting spindle connects chip bench, electrode column connects heated filament, and aspirating chamber is bled locular wall, has a gap between aspirating chamber and lifting spindle.The present invention can solve reacting gas problem pockety in hot-filament chemical vapor deposition equipment deposition chambers, is not easy to produce dust, granule drops to depositing base surface simultaneously.
Description
Technical field
The present invention relates to a kind of hot-wire chemical gas-phase deposition stove turnover gas gas path device and method, belong to Hot Filament Chemical Vapor
Deposition arts.
Background technology
At the beginning of the eighties in last century, the developed country such as American-European-Japanese has started chemical gaseous phase deposition diamond synthesis film new material
Research, to the nineties, has the most substantially found out the growth mechanism of chemistry for gas phase depositing diamond film, has entered 21 century,
No matter all achieve progress greatly from deposition technique, process technology or application aspect.During this, it is developed heated filament
CVD, direct current plasma CVD, radio frequency plasma CVD, microware bursts method, direct current-arc plasma CVD, fire
Flame burning CVD, even laser CVD method etc., through the development of more than 20 years, from the point of view of its industrialized scale and power of influence, microwave
CVD and HF CVD are main application technology, and compared with microwave, thermal filament chemical vapor deposition of diamond thin film technique cost is relatively low,
Equipment is simple, it is easy to large area deposition, and current diameter and thickness have reached 300mm and more than 2mm, and the method also takes in terms of coating
Obtained good achievement.
The factor affecting diamond film growth quality is a lot, which includes in deposition chambers the distribution of reacting gas and
Flowing.The tubular type turnover gas mode in the past taked, easily causes air flow method uneven, is arranged in the trachea above heated filament frame also
Deposit is easily had to produce and drop dust, particulate contamination.
Summary of the invention
In order to overcome the deficiencies in the prior art, the present invention provides a kind of hot-wire chemical gas-phase deposition stove turnover gas gas path device
And method.
A kind of hot-wire chemical gas-phase deposition stove turnover gas gas path device, the angle position, upside of circular cylindrical cavity is along 45 degree of angles
Welding air flap, air flap forms an airtight inlet plenum with chamber top corner part, and gas baffle plate is distributed air inlet, air inlet
Room connects air inlet, and the bottom in the vacuum chamber of circular cylindrical cavity connects electrode column, aspirating chamber, and aspirating chamber connects lifting spindle
And bleeding point, lifting spindle connects chip bench, and electrode column connects heated filament, and aspirating chamber is bled locular wall, aspirating chamber and lifting spindle
Between have a gap.
Along tens apertures of the uniform ground auger in by-level direction as air inlet on gas baffle plate；The quantity of air inlet is more than 2.
Inlet plenum is admission line, and admission line is arranged on the top of circular cylindrical cavity, and air inlet is distributed on admission line
Hole, the quantity of air inlet is more than 2, and air inlet connects admission line.
Air inlet includes the first air inlet and the second air inlet.
Bottom deposition chambers, between electrode column and lifting spindle, one metal cap of welding is as locular wall of bleeding, and is bleeding
Bottom deposition chambers below locular wall, upper shed is as bleeding point, and locular wall of bleeding forms aspirating chamber bottom deposition chambers, bleeds
Between room and lifting spindle, gap just becomes a bleed-off passage uniformly given vent to anger.
A kind of hot-wire chemical gas-phase deposition stove turnover gas gas circuit method, containing following steps；
Air chamber and aspirating chamber it is installed into as buffering in chemical vapor deposition stove chamber, equally distributed from inlet plenum
Air inlet air inlet, gives vent to anger from gap between aspirating chamber and lifting spindle；
In chamber angle position along one piece of metallic plate of 45 degree of welded corner joints as air flap, form a ring-type air inlet
Room；
Weld at the bottom of a draft hood, draft hood and deposition chambers bottom deposition chambers, between electrode column and lifting spindle
The space formed between portion, lifting spindle；
Along tens apertures of the uniform ground auger in by-level direction as air inlet on inlet plenum baffle plate；
Also comprise the steps；
In chamber outer wall upper shed as outer suction port, along the uniform ground auger in by-level direction tens on air flap
Individual aperture is as air inlet；
Bottom deposition chambers, between electrode column and lifting spindle, one metal cap of welding is as locular wall of bleeding, and is bleeding
Bottom deposition chambers below locular wall, upper shed is as bleeding point, and locular wall of bleeding forms aspirating chamber bottom deposition chambers, bleeds
Between room and lifting spindle, gap just becomes a bleed-off passage uniformly given vent to anger.
Extraneous gas first passes through air inlet and enters the inlet plenum on chamber top, is flowed by tens air inlets after buffering
Above heated filament, finally enter aspirating chamber from gap between aspirating chamber and lifting spindle, after buffering, be pumped to deposit cavity from bleeding point
Outdoor.
Inlet plenum and aspirating chamber volume are far longer than air inlet and bleed seam, so that air inlet and give vent to anger highly uniform.
It is an advantage of the invention that and can solve reacting gas skewness in hot-filament chemical vapor deposition equipment deposition chambers
Even problem, is not easy to produce dust, granule simultaneously and drops to depositing base surface.Air inlet is compared very with inlet plenum size
Little, air-flow is first full of at inlet plenum, then has pore to overflow, it is ensured that the flow of each air inlet is roughly the same.Equally, bottom
Aspirating chamber is more much bigger than suction slit, it is also possible to guarantee to bleed uniformly.The inlet plenum on top owing to welding together with water-cooling wall,
Cool down relative trachea the most a lot, be difficult at upper formation deposit, also would not drop to growing substrate surface.
Accompanying drawing explanation
When considered in conjunction with the accompanying drawings, by referring to detailed description below, it is possible to be more completely more fully understood that the present invention with
And easily learn the advantage that many of which is adjoint, but accompanying drawing described herein is used for providing a further understanding of the present invention,
Constituting the part of the present invention, the schematic description and description of the present invention is used for explaining the present invention, is not intended that this
Bright improper restriction, such as figure wherein:
Fig. 1 is the structural representation of the present invention.
The present invention is further described with embodiment below in conjunction with the accompanying drawings.
Detailed description of the invention
Obviously, those skilled in the art belong to the guarantor of the present invention based on the many modifications and variations that spirit of the invention is done
Protect scope.
Those skilled in the art of the present technique are appreciated that unless expressly stated, singulative used herein " ", "
Individual ", " described " and " being somebody's turn to do " may also comprise plural form.It is to be further understood that use in the description of the present invention arranges
Diction " including " refers to there is described feature, integer, step, operation, element and/or assembly, but it is not excluded that existence or adds
Other features one or more, integer, step, operation, element, assembly and/or their group.It should be understood that when claiming element quilt
" connecting " or during " coupled " to another element, it can be directly connected or coupled to other elements, or can also there is centre
Element.Additionally, " connection " used herein or " coupling " can include wireless connections or couple.Wording used herein " with/
Or " include one or more any cell listing item being associated and all combinations.
Those skilled in the art of the present technique are appreciated that unless otherwise defined, and all terms used herein (include technology art
Language and scientific terminology) have with the those of ordinary skill in art of the present invention be commonly understood by identical meaning.Also should
Being understood by, those terms defined in such as general dictionary should be understood that the meaning having with the context of prior art
The meaning that justice is consistent, and unless defined as here, will not explain by idealization or the most formal implication.
For ease of the understanding to the embodiment of the present invention, do as a example by several specific embodiments further below in conjunction with accompanying drawing
Explanation, and each embodiment is not intended that the restriction to the embodiment of the present invention.
Embodiment 1: as it is shown in figure 1, a kind of hot-wire chemical gas-phase deposition stove turnover gas gas path device, circular cylindrical cavity 16
Angle position, upside forms an airtight inlet plenum along 45 degree of welded corner joint air flap 2, air flap 2 with chamber top corner part
12, gas baffle plate 2 is distributed air inlet, and air inlet includes the first air inlet 3 and the second air inlet 15, and inlet plenum 12 connects air inlet
4, the bottom in the vacuum chamber 1 of circular cylindrical cavity 16 connects electrode column 6, aspirating chamber 13, and aspirating chamber 13 connects lifting spindle 9 He
Bleeding point 11, lifting spindle 9 connects chip bench 8, and electrode column 6 connects heated filament 5, and aspirating chamber 13 is bled locular wall 7, aspirating chamber 13 with
A gap 10 is had between lifting spindle 9.
Inlet plenum 12 is admission line, and admission line is arranged on the top of circular cylindrical cavity 16, is distributed on admission line
N number of air inlet (N is integer) more than 2, air inlet 4 connects admission line；
Along tens apertures of the uniform ground auger in by-level direction as air inlet on gas baffle plate 2；The quantity of air inlet is more than
2,
Bottom deposition chambers, between electrode column 6 and lifting spindle 9, one metal cap of welding is as locular wall 7 of bleeding, and is taking out
Bottom air chamber wall 7 deposition chambers below, upper shed is as bleeding point 11, and locular wall 7 of bleeding forms aspirating chamber bottom deposition chambers
13, between aspirating chamber 13 and lifting spindle 9, gap 10 just becomes a bleed-off passage uniformly given vent to anger.
The most whole turnover gas gas circuit just completes: extraneous gas first passes through air inlet 4 and enters the first of chamber top
Inlet plenum 12, flow to, above heated filament 5, finally enter aspirating chamber 13 from a gap 10 by tens air inlets after buffering, slow
It is pumped to deposition chambers from bleeding point 11 after punching.
Embodiment 2: as it is shown in figure 1, a kind of hot-wire chemical gas-phase deposition stove turnover gas gas circuit method, containing following steps；
Air chamber and aspirating chamber it is installed into as buffering in chemical vapor deposition stove chamber, equally distributed from inlet plenum
Air inlet air inlet, gives vent to anger from gap between aspirating chamber and lifting spindle；
In chamber angle position along one piece of metallic plate of 45 degree of welded corner joints as air flap 2, form a ring-type air inlet
Room；
A draft hood, draft hood and deposition chambers is welded bottom deposition chambers, between electrode column 6 and lifting spindle 9
The space formed between bottom, lifting spindle 9；
Along tens apertures of the uniform ground auger in by-level direction as air inlet on inlet plenum baffle plate；
Also comprise the steps；
Hot-filament chemical vapor deposition equipment deposition chambers is typically cylindrical Double water-cooled structure, on edge, chamber angle position
One piece of metallic plate of 45 degree of welded corner joints, as air flap 2, forms an airtight inlet plenum 12, in chamber outer wall upper shed conduct
Outer suction port 4, along tens apertures of the uniform ground auger in by-level direction as air inlet on air flap 2；
Bottom deposition chambers, between electrode column 6 and lifting spindle 9, one metal cap of welding is as locular wall 7 of bleeding, and is taking out
Bottom air chamber wall 7 deposition chambers below, upper shed is as bleeding point 11, and locular wall 7 of bleeding forms aspirating chamber bottom deposition chambers
13, between aspirating chamber and lifting spindle, gap 10 just becomes a bleed-off passage uniformly given vent to anger.
The most whole turnover gas gas circuit just completes: extraneous gas first passes through air inlet 4 and enters the air inlet on chamber top
Room 12, flow to, above heated filament 5, finally enter from gap between aspirating chamber and lifting spindle 10 by tens air inlets after buffering
Aspirating chamber 13, is pumped to deposition chambers from bleeding point 11 after buffering.
Being positioned at inlet plenum above heated filament side owing to being to be welded to connect with Double water-cooled chamber, the heat of heated filament radiation holds very much
Easily conduct, air inlet locular wall is not easy produce the deposits such as dust.And inlet plenum and aspirating chamber volume are far longer than air inlet
Hole and bleed seam, so that air inlet and give vent to anger highly uniform.
Embodiment 3: the invention discloses a kind of hot-wire chemical gas-phase deposition stove turnover gas gas circuit.Hot Filament Chemical Vapor in the past
The tubular type turnover gas mode taked in cvd furnace, easily causes air flow method uneven, is arranged in the gas circuit above heated filament frame also
Deposit is easily had to produce and drop dust, particulate contamination.
For solving these problems, the present invention uses and isolates an inlet plenum above chamber side, and makes below chamber
Make an aspirating chamber 13 as buffering.Implement the present invention, can solve hot-filament chemical vapor deposition equipment deposition chambers is reacted
Gas problem pockety, is not easy to produce dust, granule simultaneously and drops to depositing base surface.
As it has been described above, embodiments of the invention are explained, but as long as essentially without departing from this
Bright inventive point and effect can have a lot of deformation, and this will be readily apparent to persons skilled in the art.Therefore, this
Within the variation of sample is also integrally incorporated in protection scope of the present invention.
Claims (8)
1. a hot-wire chemical gas-phase deposition stove turnover gas gas path device, it is characterised in that the angle position, upside of circular cylindrical cavity
Along 45 degree of welded corner joint air flap, air flap forms an airtight inlet plenum with chamber top corner part, gas baffle plate be distributed into
Pore, inlet plenum connects air inlet, and the bottom in the vacuum chamber of circular cylindrical cavity connects electrode column, aspirating chamber, and aspirating chamber is even
Connecing lifting spindle and bleeding point, lifting spindle connects chip bench, and electrode column connects heated filament, and aspirating chamber is bled locular wall, aspirating chamber
And there is a gap between lifting spindle.
A kind of hot-wire chemical gas-phase deposition stove turnover gas gas path device the most according to claim 1, it is characterised in that gas keeps off
Along tens apertures of the uniform ground auger in by-level direction as air inlet on plate；The quantity of air inlet is more than 2.
A kind of hot-wire chemical gas-phase deposition stove turnover gas gas path device the most according to claim 1, it is characterised in that air inlet
Room is admission line, and admission line is arranged on the top of circular cylindrical cavity, and air inlet is distributed on admission line, the number of air inlet
Amount is more than 2, and air inlet connects admission line.
A kind of hot-wire chemical gas-phase deposition stove turnover gas gas path device the most according to claim 1, it is characterised in that air inlet
Hole includes the first air inlet and the second air inlet.
A kind of hot-wire chemical gas-phase deposition stove turnover gas gas path device the most according to claim 1, it is characterised in that heavy
Long-pending cavity bottom, welds a metal cap as locular wall of bleeding, sinking below locular wall of bleeding between electrode column and lifting spindle
Long-pending cavity bottom upper shed is as bleeding point, and locular wall of bleeding forms aspirating chamber, aspirating chamber and lifting spindle bottom deposition chambers
Between gap just become a bleed-off passage uniformly given vent to anger.
6. a hot-wire chemical gas-phase deposition stove turnover gas gas circuit method, it is characterised in that containing following steps；
Air chamber and aspirating chamber it is installed into as buffering, equally distributed air inlet from inlet plenum in chemical vapor deposition stove chamber
Gas inlet hole, gives vent to anger from gap between aspirating chamber and lifting spindle；
In chamber angle position along one piece of metallic plate of 45 degree of welded corner joints as air flap, form a ring-type inlet plenum；
Weld bottom a draft hood, draft hood and deposition chambers bottom deposition chambers, between electrode column and lifting spindle, rise
The space formed between fall main shaft；
Along tens apertures of the uniform ground auger in by-level direction as air inlet on inlet plenum baffle plate；
Also comprise the steps；
In chamber outer wall upper shed as outer suction port, little along the uniform ground auger in by-level direction tens on air flap
Hole is as air inlet；
Bottom deposition chambers, between electrode column and lifting spindle, one metal cap of welding is as locular wall of bleeding, at locular wall of bleeding
Bottom following deposition chambers, upper shed is as bleeding point, forms aspirating chamber bottom bleed locular wall and deposition chambers, aspirating chamber with
Between lifting spindle, gap just becomes a bleed-off passage uniformly given vent to anger.
A kind of hot-wire chemical gas-phase deposition stove turnover gas gas circuit method the most according to claim 6, it is characterised in that outside
Gas first passes through air inlet and enters the inlet plenum on chamber top, flow to above heated filament by tens air inlets after buffering,
Finally enter aspirating chamber from gap between aspirating chamber and lifting spindle, after buffering from bleeding point is pumped to deposition chambers.
A kind of hot-wire chemical gas-phase deposition stove turnover gas gas circuit method the most according to claim 6, it is characterised in that air inlet
Room and aspirating chamber volume are far longer than air inlet and bleed seam, so that air inlet and give vent to anger highly uniform.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610528450.7A CN106191816B (en) | 2016-07-06 | 2016-07-06 | A kind of hot-wire chemical gas-phase deposition furnace disengaging gas gas path device and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610528450.7A CN106191816B (en) | 2016-07-06 | 2016-07-06 | A kind of hot-wire chemical gas-phase deposition furnace disengaging gas gas path device and method |
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| CN106191816A true CN106191816A (en) | 2016-12-07 |
| CN106191816B CN106191816B (en) | 2019-04-05 |
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| CN201610528450.7A Active CN106191816B (en) | 2016-07-06 | 2016-07-06 | A kind of hot-wire chemical gas-phase deposition furnace disengaging gas gas path device and method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106702317A (en) * | 2016-12-14 | 2017-05-24 | 南昌欧菲显示科技有限公司 | Coating equipment |
| CN110423994A (en) * | 2019-08-10 | 2019-11-08 | 上海妙壳新材料科技有限公司 | A kind of diamond-like coating moves back membrane treatment appts and its application method |
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| JP2000073188A (en) * | 1998-08-28 | 2000-03-07 | Matsushita Electric Ind Co Ltd | Plasma treating apparatus |
| US6921437B1 (en) * | 2003-05-30 | 2005-07-26 | Aviza Technology, Inc. | Gas distribution system |
| CN202181350U (en) * | 2011-07-29 | 2012-04-04 | 广州市德百顺电气科技有限公司 | Hot-filament chemical vapor deposition equipment |
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| CN103774120A (en) * | 2013-12-31 | 2014-05-07 | 刘键 | Gas uniformizing device for PECVD (Plasma Enhanced Chemical Vapor Deposition) system |
| JP2016028425A (en) * | 2011-01-13 | 2016-02-25 | クックジェ エレクトリック コリア カンパニー リミテッド | Injection member used for manufacturing semiconductor, plasma processing apparatus using the same and method of manufacturing semiconductor device |
| CN205062179U (en) * | 2015-07-29 | 2016-03-02 | 河源市璐悦自动化设备有限公司 | Large tracts of land diamond -like chemical vapor deposition coating film production line |
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2016
- 2016-07-06 CN CN201610528450.7A patent/CN106191816B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000073188A (en) * | 1998-08-28 | 2000-03-07 | Matsushita Electric Ind Co Ltd | Plasma treating apparatus |
| US6921437B1 (en) * | 2003-05-30 | 2005-07-26 | Aviza Technology, Inc. | Gas distribution system |
| JP2016028425A (en) * | 2011-01-13 | 2016-02-25 | クックジェ エレクトリック コリア カンパニー リミテッド | Injection member used for manufacturing semiconductor, plasma processing apparatus using the same and method of manufacturing semiconductor device |
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| CN203238326U (en) * | 2013-03-26 | 2013-10-16 | 苏州圆芯光机电科技有限公司 | Chemical vapor deposition device for hot filaments |
| CN103774120A (en) * | 2013-12-31 | 2014-05-07 | 刘键 | Gas uniformizing device for PECVD (Plasma Enhanced Chemical Vapor Deposition) system |
| CN205062179U (en) * | 2015-07-29 | 2016-03-02 | 河源市璐悦自动化设备有限公司 | Large tracts of land diamond -like chemical vapor deposition coating film production line |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106702317A (en) * | 2016-12-14 | 2017-05-24 | 南昌欧菲显示科技有限公司 | Coating equipment |
| CN110423994A (en) * | 2019-08-10 | 2019-11-08 | 上海妙壳新材料科技有限公司 | A kind of diamond-like coating moves back membrane treatment appts and its application method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106191816B (en) | 2019-04-05 |
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