CN104347790B - Manufacturing method and manufacturing device of planar thin-film thermoelectric device - Google Patents
Manufacturing method and manufacturing device of planar thin-film thermoelectric device Download PDFInfo
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- CN104347790B CN104347790B CN201310337434.6A CN201310337434A CN104347790B CN 104347790 B CN104347790 B CN 104347790B CN 201310337434 A CN201310337434 A CN 201310337434A CN 104347790 B CN104347790 B CN 104347790B
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Abstract
The invention discloses a manufacturing method and a manufacturing device of a planar thin-film thermoelectric device. The method comprises the following steps: 1 manufacturing hollowed-out mask plates (7,8,9), hollowed-out patterns of the hollowed-out mask plates being used for limiting at least part of patterns of the thin-film thermoelectric device, and fixing a substrate (1) on a substrate holder (6); 2 respectively forming at least one set of positioning holes (10) opposite in positions on the substrate holder and the hollowed-out mask plates, each set of positioning holes comprising at least three positioning holes, and placing positioning ball bearings (11) in the positioning holes so that the hollowed-out mask plates are positioned on the substrate holder at intervals; 3 clamping and fixing the substrate holder and the hollowed-out mask plates, and completing the deposition manufacturing of the hollowed-out patterns of the hollowed-out mask plates on the substrate through the hollowed-out mask plates by utilizing a physical vapor deposition technology. The patterns of the thermoelectric device are realized by a plurality of hollowed-out mask plates efficiently and conveniently, a ball bearing positioning mode is utilized to complete the accurate positioning, the operation is convenient and the efficiency is enhanced.
Description
Technical field
A kind of the present invention relates to manufacture field of thermo-electric device, in particular it relates to making of plane thin film thermoelectric device
Method and producing device.
Background technology
Thermo-electric device is capable of the direct conversion of heat energy and electric energy, has two basic functions such as generating and refrigeration, can
It is widely used in many key areas such as electronics, photoelectron, space flight, national defence and biomedicine.Thermo-electric device constructs for total solids,
There is compact conformation, no movable part, no dry sound, the outstanding advantages such as uncontaminated gases discharge, increasingly cause that people's is wide
General concern.Thin film thermoelectric device generally can be divided into plane (in-plane) and two kinds of structures of vertical-type (cross-plane).Figure
1 shows that a kind of schematic diagram of plane thin film thermoelectric device, in figure each pair N-shaped and p-type thermoelectric arm are consisted of connection electrode
One thermocouple unit, several thermocouple units are cascaded composition thermo-electric device, and whole device can be seen as putting down
Lie in substrate surface, when prolong substrate surface and parallel to thermoelectric arm direction on exist a thermograde when, due to
Seebeck effect, can obtain an output voltage from the terminals of device, here it is thermo-electric device is substantially former for generate electricity
Reason.
Except generating electricity, plane thin film thermoelectric device can be also used for freezing, and in this case, thermoelectric arm generally requires
It is arranged in an endocentric construction to surround cold end.Fig. 2 shows such example, wherein all thermoelectricity upper-arm circumferences of device
It is arranged radially around a center of circle, in every group of thermocouple unit, the angle between N-shaped and p-type thermoelectric arm is all θ.In order to improve
Refrigeration, can also adopt concatenation structure in the devices, and such as Fig. 3 shows the plane thin film heat containing polarity structure
Electrical part, the design similar with structure shown in this Fig. 3 and Fig. 2 had had description in following papers, comprising: a.j. lattice Ross
Et al. paper, quoted from ＜ ＜ MEMS magazine ＞ ＞, volume 20 (5 phase), page 1201 (2011) (a.j.gross et al,
Journal of microelectromechanical systems, 20(5), 1201(2011))；J.y. gold et al. paper, draws
Generate electricity and energy conversion application micro ＆ nano technology international symposium collected works ＞ ＞, Lu Wen from ＜ ＜, Belgium, 19-22 page (2010)
(j.y.kim, proceedings of the international workshops on micro and
Nanotechnology for power generation and energy conversion applications,
Leuven, belgium, 19-22(2010)).
The core of above-mentioned plane thin film thermoelectric device manufacture method be the graphical of thermoelectric arm and electrode and figure it
Between be mutually aligned.Wherein, graphically it is based primarily upon following two methods: one kind is using ultraviolet photolithographic and dry (wet) method etching
Technology, another is that with respect to the former, later approach is relatively simple based on hollowed-out mask plate (stencil mask) technology
Just, required figure directly can be formed in processes of physical vapor deposition, it is to avoid ultraviolet photolithographic and dry (wet) method etching etc.
Step.But for second method, due to needing using polylith hollowed-out mask plate in device fabrication processes, mask plate and
There is a be aligned and fixation problem, this be aligned and fixation generally require by special equipment ability between the pattern of substrate
Complete, operating procedure is comparatively laborious simultaneously, alignment precision and repeatability are also problematic in that.
Content of the invention
It is an object of the invention to provide a kind of manufacture method of plane thin film thermoelectric device and producing device, flat to improve
The make efficiency of face type thin film thermoelectric device.
For achieving the above object, according to an aspect of the invention, it is provided a kind of system of plane thin film thermoelectric device
Make method, this manufacture method includes: step one: make hollowed-out mask plate, the pierced pattern of this hollowed-out mask plate is used for limiting institute
State at least part of pattern of plane thin film thermoelectric device, and substrate is fixed on substrate bracket；Step 2: in described substrate
The support at least a set of location hole relative with difference forming position on hollowed-out mask plate, often covers described location hole and includes at least three
Location hole, by placement positioning ball on described location hole by described hollowed-out mask plate compartment of terrain location and installation in described lining
On collet；Step 3: described substrate bracket and hollowed-out mask plate clamping are fixed, using physical gas phase deposition technology and through described
The deposition that hollowed-out mask plate completes the pierced pattern of this hollowed-out mask plate over the substrate makes.
Preferably, the described hollowed-out mask plate of the pattern for forming described plane thin film thermoelectric device is polylith, and
And described manufacture method also includes: step 4: change described hollowed-out mask plate and simultaneously position, and/or will complete to deposit the institute making
Reorientate after stating hollowed-out mask plate dismounting clamping and shift position, repeat step three, until completing described thin film thermoelectric device
Whole pattern deposition make.
Preferably, in step 2, described substrate bracket or hollowed-out mask plate are formed with the described location hole of many sets, in often covering
Including at least three equivalently-sized described location holes, and it is different, thus passing through accordingly big respectively to cover the size of described location hole
Little detent ball by described hollowed-out mask plate location and installation on described substrate bracket to adapt to the described substrate of different-thickness.Fixed
Position hole can be all kinds and shape, such as square hole, circular hole, through hole or blind hole etc..
Preferably, described plane thin film thermoelectric device includes shape identical multiple p-type thermoelectric arm and N-shaped thermoelectric arm,
The plurality of p-type thermoelectric arm and N-shaped thermoelectric arm are parallel to each other and are equally spaced arranged alternately, and described manufacture method includes: in step
In one, make one block of thermoelectric arm hollowed-out mask plate to limit the pattern of described p-type thermoelectric arm or N-shaped thermoelectric arm；In addition also can make
Make one block of hollowed-out mask plate to limit the pattern of connection electrode (containing terminals).In step 2, in described substrate bracket or described
Two sets of location holes are formed on one block of thermoelectric arm hollowed-out mask plate, this two sets of location holes are along described p-type thermoelectric arm and N-shaped thermoelectric arm
Arragement direction interval setting, and this interval is identical with the interval of adjacent described p-type thermoelectric arm and N-shaped thermoelectric arm；Or, institute
State and form two sets of location holes respectively on substrate bracket and described one block of thermoelectric arm hollowed-out mask plate, when described substrate bracket and described one piece
Two sets of described location holes in the one of which of thermoelectric arm hollowed-out mask plate are along the arrangement of described p-type thermoelectric arm and N-shaped thermoelectric arm
Direction interval setting, and when this interval is identical with the interval of adjacent described p-type thermoelectric arm and N-shaped thermoelectric arm, described substrate
Two sets of described location holes in the wherein another one of support and described one block of thermoelectric arm hollowed-out mask plate are along described p-type thermoelectric arm and n
The arragement direction of type thermoelectric arm be spaced apart zero；In step 3, described thermoelectric arm hollowed-out mask plate is positioned with described two sets
A set of location hole location and installation in hole, and in step 4, described thermoelectric arm hollowed-out mask plate is dismantled clamping and mobile position
Postpone, reorientated with another set of location hole.After the making completing p-type thermoelectric arm and N-shaped thermoelectric arm, replaceable restriction connects
The hollowed-out mask plate of electrode (containing terminals) pattern simultaneously positions.
Preferably, described plane thin film thermoelectric device includes shape identical multiple p-type thermoelectric arm and N-shaped thermoelectric arm,
The plurality of p-type thermoelectric arm and N-shaped thermoelectric arm is along the circumferential direction alternately equiangularly spaced arranges and radially diverge, described making
Method includes: in step one, makes one block of thermoelectric arm hollowed-out mask plate to limit described p-type thermoelectric arm or N-shaped thermoelectric arm
Pattern；In step 2, two sets of location holes of formation on described substrate bracket or described one block of thermoelectric arm hollowed-out mask plate, this two sets
Location hole along described circumferencial direction interval setting, the interval of this interval angles and adjacent described p-type thermoelectric arm and N-shaped thermoelectric arm
Angle is identical；Or, described substrate bracket and described one block of thermoelectric arm hollowed-out mask plate form two sets of location holes, respectively when described
Two sets of described location holes in the one of which of substrate bracket and described one block of thermoelectric arm hollowed-out mask plate are along between described circumferencial direction
Every setting, when this interval angles is identical with the interval angles of adjacent described p-type thermoelectric arm and N-shaped thermoelectric arm, described substrate bracket
With two sets of described location holes in the wherein another one of described one block of thermoelectric arm hollowed-out mask plate along described circumferencial direction interval
Angle is zero；In step 3, by described hollowed-out mask plate with a set of location hole location and installation in described two sets of location holes, and
In step 4, described hollowed-out mask plate is dismantled after clamping and shift position, is reorientated with another set of location hole.Complete
After the making of p-type thermoelectric arm and N-shaped thermoelectric arm, change the hollowed-out mask plate limiting connection electrode (containing terminals) pattern and determine
Position.
Preferably, the surrounding in described hollowed-out mask plate installs fixed plate additional.
Preferably, in step 3, described substrate bracket and hollowed-out mask plate are fixed on upper clamping by securing member clamping
Between plate and lower clamping plate, the substrate bracket being fixed with described substrate is placed on lower clamping plate, and described upper clamping plate is provided with out
Mouth is to expose described substrate.
Preferably, described upper clamping plate and lower clamping plate are correspondingly provided with multiple installing holes, the plurality of installing hole is around peace
Be placed on the described substrate setting on described lower clamping plate, described securing member pass through described installing hole with fasten described upper clamping plate and
Lower clamping plate.
Preferably, the material of described substrate and hollowed-out mask plate is metal, insulator or quasiconductor.
Preferably, described physical gas phase deposition technology is molecular beam epitaxy deposition technology, sputter-deposition technology, pulse laser
Deposition technique, electron-beam evaporation technology or thermal evaporation deposition technology.
Preferably, this manufacture method also includes step 5: will complete to deposit the described plane thin film thermoelectric device making
Part is made annealing treatment in vacuum or inert atmosphere.
According to a further aspect in the invention, there is provided a kind of producing device of plane thin film thermoelectric device, this making dress
Put including substrate, substrate bracket, polylith hollowed-out mask plate and clamping mechanism, described substrate is fixed on described substrate bracket, described engrave
The pierced pattern of empty mask plate is used for limiting at least part of pattern of described plane thin film thermoelectric device；Wherein, described substrate
The support at least a set of location hole relative with difference forming position on hollowed-out mask plate, often covers described location hole and includes at least three
Location hole, with by described location hole placement positioning ball by described hollowed-out mask plate compartment of terrain location and installation in described lining
On collet, described clamping mechanism is used for the fixing described substrate bracket of clamping and hollowed-out mask plate.
Preferably, described substrate bracket and/or described hollowed-out mask plate are formed with spaced many set location holes.
Preferably, described many set location holes are two sets, and the size of each set location hole in this two sets of location holes is different.
Preferably, described many set location holes are two sets, this two sets of location holes along the circumferential direction equiangularly spaced setting.
Preferably, the surrounding of described hollowed-out mask plate adds fixed plate.
Preferably, described clamping mechanism includes clamping plate and lower clamping plate, and the substrate bracket being fixed with described substrate is laid
On lower clamping plate, described upper clamping plate is provided with opening to expose described substrate.
Preferably, described upper clamping plate and lower clamping plate are correspondingly provided with multiple installing holes, the plurality of installing hole is around peace
Be placed on the described substrate setting on described lower clamping plate, described securing member pass through described installing hole with fasten described upper clamping plate and
Lower clamping plate.
By technique scheme, in the manufacture method and producing device of membrane according to the invention thermo-electric device, thermoelectricity
The graphical of device is realized by hollowed-out mask plate, forms thermoelectricity by using cooperatively with various physical vapour deposition (PVD) masking techniques
The pattern of device, and can also be realized using the several blocks of hollowed-out mask plates simplifying for the pattern of given shape, high
Imitate and convenient.Complete being aligned between hollowed-out mask plate and substrate and positioning especially with ball positioning to determine so that making
Bit alignment accurately, is easy to operate, thus greatly improving the make efficiency of thermo-electric device.
Other features and advantages of the present invention will be described in detail in subsequent specific embodiment part.
Brief description
Accompanying drawing is used to provide a further understanding of the present invention, and constitutes the part of description, with following tool
Body embodiment is used for explaining the present invention together, but is not construed as limiting the invention.In the accompanying drawings:
Fig. 1 is a kind of plane thin film thermoelectric device schematic diagram, and wherein all thermoelectric arms are all arranged in parallel, every group of thermoelectricity
In even unit, the position of p-type and N-shaped thermoelectric arm all differs a translational movement dx, and the width of thermoelectric arm and length are respectively by w and l table
Show；
Fig. 2 is the schematic diagram of another kind of plane thin film thermoelectric device, and wherein thermoelectric arm is around center of circle, radial
Arrangement, in wherein every group of thermocouple unit, the angle between N-shaped and p-type thermoelectric arm is θ；
Fig. 3 be another kind of thermoelectric arm around center of circle, be arranged radially, the plane thin film thermoelectric of the two poles of the earth structure
The schematic diagram of device；
Fig. 4 is the schematic diagram being aligned between polylith hollowed-out mask plate and between hollowed-out mask plate and substrate；
Fig. 5 illustrates placement positioning steel ball in the location hole of substrate bracket, and substrate bracket has secured the situation of substrate；
Fig. 6 illustrates and the hollowed-out mask plate defining p-type thermoelectric arm is placed on steel ball, somewhat moves mask plate 7 so that steel
Pearl snaps in corresponding location hole on mask plate, completes to be aligned and positions；
Fig. 7 is to complete be aligned and the substrate bracket of positioning and the side view of hollowed-out mask plate assembly；
Fig. 8 illustrates and clamps the assembly fixture of substrate bracket and hollowed-out mask plate, and uses securing member stationary fixture；
Fig. 9 illustrates and the hollowed-out mask plate defining N-shaped thermoelectric arm is placed on steel ball, somewhat moves mask plate so that steel
Pearl snaps in corresponding location hole on mask plate, completes to be aligned and positions；
Figure 10 illustrates and the hollowed-out mask plate defining connection electrode (containing terminals) is placed on positioning ball, somewhat moves
Mask plate, so that steel ball snaps in the corresponding location hole of mask plate, completes to be aligned；
Figure 11 illustrates and makes the various sizes of location hole of many sets on hollowed-out mask plate and substrate bracket, and different-diameter
Positioning ball uses cooperatively, thus it is possible to vary the gap between hollowed-out mask plate and substrate bracket, to accommodate the substrate of different-thickness；Figure
In respectively illustrate three sets of location holes on hollowed-out mask plate and substrate bracket, wherein location hole a, b, c is located on substrate bracket, positioning
Hole a ', b ', c ' are located on hollowed-out mask plate, and location hole a, b, c are used cooperatively with location hole a ', b ', c ' respectively；The positioning of in figure
The size in hole does not represent full-size(d), and for clarity, this figure does not show the securing plate 12 of mask plate；
Figure 12 a and Figure 12 b respectively illustrates and makes the with respect to first set location hole on substrate bracket and hollowed-out mask plate
Two sets of location holes, two on substrate bracket set location hole is respectively first set location hole (x=a, b, c) and second set of location hole (xx
=aa, bb, cc), second set of location hole has a displacement with respect to first set location hole, and this displacement is in thermoelectric arm translation direction
Component on (x direction as shown in FIG.) is dx；Two sets of location holes on thermoelectric arm hollowed-out mask plate are first set location hole
(x '=a ', b ', c ') and second set of location hole (xx '=aa ', bb ', cc '), second set of location hole is with respect to first set location hole
Component on thermoelectric arm translation direction (x direction as shown in FIG.) for the displacement is zero；
Figure 13 illustrates and steel ball is positioned in first set location hole (as b group) place, with hollowed-out mask plate of substrate bracket
B ' the group of first set location hole matches, and completes to be aligned, with depositing p-type (N-shaped) thermoelectric arm；
Figure 14 illustrates and steel ball is positioned in second set of location hole (as bb group) place, with hollowed-out mask plate of substrate bracket
Bb ' the group of second set of location hole matches, complete be aligned and, with depositing n-type (p-type) thermoelectric arm；For clarity, in figure does not have
The fixed plate of display mask plate；
Figure 15 a and Figure 15 b respectively illustrates on substrate bracket and makes with respect to first set location hole on hollowed-out mask plate
Second set of location hole, two on substrate bracket set location hole respectively first set location hole a and second set of location hole aa, second set
Between location hole aa and center of circle o, between line and first set location hole and o, the angle of line is θ；In thermoelectric arm hollowed-out mask plate
On two sets of location holes be respectively first set location hole a ' and second set location hole aa ', second set of location hole aa ' and center of circle o ' it
Between between line and first set location hole and o ' angle of line be zero；And
Figure 16 is the clamping mechanism (fixture) being used in a preferred embodiment of the invention using cooperatively with thermal evaporation
Structural representation.
Description of reference numerals
1 substrate 2 p-type thermoelectric arm
3 N-shaped thermoelectric arm 4 connection electrode
5 terminals 6 substrate bracket
The mask plate of the mask plate 8 N-shaped thermoelectric arm of 7 p-type thermoelectric arms
Mask plate 10 location hole of 9 connection electrodes (containing terminals)
11 detent ball 12 fixed plate
14 times clamping plates of clamping plate on 13
15 securing member 16 upper installing hole
17 times installing hole dx, dy translational movements
The substrate θ angle of 18 depositing p-type thermoelectric arms
19 depositing p-type and N-shaped thermoelectric arm substrate o, the o ' centers of circle
W thermoelectric arm width l thermoelectricity arm lengths
Location hole --- --- -- a, b, c； a′、b′、c′；
-------- aa、bb、cc； aa′、bb′、cc′
Specific embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.It should be appreciated that this place is retouched
The specific embodiment stated is merely to illustrate and explains the present invention, is not limited to the present invention.
In the present invention, in the case of illustrating on the contrary, the noun of locality of use such as " upper and lower, top, bottom " typically pin
For direction shown in the drawings or for vertically, on vertical or gravity direction for each part mutual alignment relation
Description word.
As shown in Fig. 4 to Fig. 8, the invention provides a kind of producing device of plane thin film thermoelectric device, this making dress
Put including substrate 1, substrate bracket 6, polylith hollowed-out mask plate 7,8,9 and clamping mechanism, substrate 1 is fixed on substrate bracket 6, and hollow out is covered
The pierced pattern of template 7,8,9 is used for limiting at least part of pattern of thin film thermoelectric device.Wherein, substrate bracket 6 and hollowed-out mask
The relative at least a set of location hole 10 of difference forming position on plate 7,8,9, often covers location hole and includes at least three location holes 10,
With by location hole 10 placement positioning ball 11 by hollowed-out mask plate 7,8,9 compartment of terrain location and installation on substrate bracket 6, dress
Clamp mechanism is used for the fixing substrate bracket 6 of clamping and hollowed-out mask plate 7,8,9.It is contemplated that by hollowed-out mask plate and combining physics
Vapour deposition masking technique is to cooperatively form the pattern of plane thin film thermoelectric device, thus improving make efficiency.Therefore, make
Respective design polylith hollowed-out mask plate and substrate bracket in device, and for will the two clamping fixation in order to conjugate qi-regulating
Mutually deposition masking technique carries out element manufacturing.Hollowed-out mask plate 7,8,9 therein can limit whole thermoelectricity whole or in part
The pattern of device, such as one block thermoelectric arm hollowed-out mask plate only limits N-shaped thermoelectric arm therein, and another piece of thermoelectric arm hollow out is covered
Template limits p-type thermoelectric arm therein etc., is applied in combination to form whole pattern.
Preferably by ball positioning mode in the producing device of the present invention.I.e. as shown in Figure 4 and Figure 5, in substrate bracket 6
With spaced many set location holes 10 are respectively formed with hollowed-out mask plate 7,8,9, place correspondingly sized rolling in location hole
After pearl, substrate bracket and hollowed-out mask plate compartment of terrain location and installation can be made, as shown in Figure 7.Wherein, covering location hole 10 can be more
Two sets, the size of each set location hole 10 in this two sets of location holes is different, thus when substrate thickness is different, using different size
Ball positioning, to adapt to this substrate thickness.For the thermo-electric device of pattern shown in Fig. 1, two sets of location holes are set and can be additionally used in
After having made N-shaped thermoelectric arm with same thermoelectric arm hollowed-out mask plate, position to make p-type thermoelectricity using another set of location hole
Arm.For the thermo-electric device of pattern shown in Fig. 2, two sets of location holes can along the circumferential direction equiangularly spaced setting, equally easily
The thermoelectricity of whole thermo-electric device that completed using one block of thermoelectric arm hollowed-out mask plate is realized by the positioning of two sets of location holes
Arm.It is described in detail below for property.
Additionally, as shown in fig. 6, the surrounding of hollowed-out mask plate 7,8,9 can add fixed plate 12.Fixed plate 12 is used for reinforcing
Hollowed-out mask plate and positioning convenient for assembly.In addition, Fig. 8 exemplarily lists a kind of above-mentioned clamping mechanism, it includes dress
Clamping plate 13 and lower clamping plate 14, the substrate bracket 6 being fixed with substrate 1 is placed on lower clamping plate 14, and upper clamping plate 13 is provided with out
Mouth is to expose substrate 1.Wherein, upper clamping plate 13 and lower clamping plate 14 are correspondingly provided with multiple installing holes 16,17, the plurality of installation
Hole 16,17 is arranged around the substrate 1 being placed on lower clamping plate 14, and securing member 15 passes through installing hole 16,17 to fasten upper clamping
Plate 13 and lower clamping plate 14.After hollowed-out mask plate with substrate alignment and after clamping fixation, then physical vapour deposition (PVD) masking can be utilized
Technology carries out element manufacturing.
In the design basis of the producing device of above-mentioned thin film thermoelectric device, below in conjunction with accompanying drawing so that basis is discussed in detail
The manufacture method of the thin film thermoelectric device of the present invention.
1) design substrate support 6 and polylith hollowed-out mask plate first, as shown in figure 4, i.e. substrate bracket 6, p-type thermoelectric arm mask plate
7th, N-shaped thermoelectric arm mask plate 8 and connection electrode (containing terminals) mask plate 9, substrate bracket 6 is used for fixing substrate 1, and every piece of hollow out is covered
One group of hollow out figure is designed on template, is respectively intended to define p-type thermoelectric arm, N-shaped thermoelectric arm and connection electrode (containing terminals)
Shape, make on substrate bracket 6 and each block of hollowed-out mask plate has location hole 10 simultaneously.After the position alignment of location hole 10, respectively
Figure on hollowed-out mask plate is also just mutually aligned, and meanwhile, the figure of simultaneously each block of hollowed-out mask plate is with respect to the position of substrate
Put and also determine that.
2) put into the ball (such as steel ball) of a set of same diameter in the location hole 10 of a set of same size of substrate bracket,
As shown in Figure 5.Again the hollowed-out mask plate 7 defining p-type thermoelectric arm is placed on steel ball, fixing such as Fig. 6 of periphery of hollowed-out mask plate
Shown securing plate 12, somewhat moves mask plate 7 so that steel ball snaps in corresponding location hole 10 on mask plate, completes to be aligned
And positioning, Fig. 7 be shown that hollowed-out mask plate complete be aligned positioning after side view.
3) will be solid to the substrate bracket-hollowed-out mask plate assembly clamping plate 13 and lower clamping plate 14 that complete be aligned positioning
Fixed, upper clamping plate 13 and lower clamping plate 14 are respectively provided with upper installing hole 16 and lower installing hole 17, so that the two is alignd and use fastening
Part 15 is tightened, as shown in Figure 8.
4) utilize physical gas phase deposition technology first depositing p-type thermoelectric arm on substrate.
5) after completing the deposition of p-type thermoelectric arm, remove clamping plate 13 and lower clamping plate 14, and define p-type thermoelectric arm
Hollowed-out mask plate 7, in the case of the position not changing the substrate substrate 18 of depositing p-type thermoelectric arm (i.e.), as Fig. 9 institute
Show, the hollowed-out mask plate 8 defining N-shaped thermoelectric arm is placed on steel ball, somewhat moves mask plate 8 so that steel ball snaps in this mask
In corresponding location hole on plate, complete to be aligned.
6) substrate bracket-hollowed-out mask plate assembly completing be aligned is fixed with fixture again, and it is tight to tighten screw etc.
Firmware.
7) utilize physical gas phase deposition technology depositing n-type thermoelectric arm on substrate.
8), after completing the deposition of N-shaped thermoelectric arm, fixture, and the hollowed-out mask plate 8 of definition N-shaped thermoelectric arm are removed, not
In the case of changing the position of the substrate substrate 19 of depositing p-type and N-shaped thermoelectric arm (i.e.), connection electrode will be defined (containing wiring
End) hollowed-out mask plate 9 be placed on be aligned steel ball (Figure 10), somewhat move mask plate so that steel ball to snap in mask plate corresponding
In location hole, complete to be aligned.
9) substrate bracket-hollowed-out mask plate assembly fixture completing be aligned is fixed, and tightened the securing members such as screw.
10) physical gas phase deposition technology deposition barrier layer and metal connection electrode (containing terminals) are utilized.Barrier layer is used for
The metallic atom constituting electrode is stoped to diffuse into thermoelectric arm, thus causing the reduction of thin film thermoelectric performance.
11) device is made annealing treatment.
Wherein, the number of above-mentioned used positioning ball is preferably three or more than three, to complete to position and fixing,
More preferably four.
Preferably, referring to Fig. 7, various sizes of location hole 10 more than a set of is made on substrate bracket and hollowed-out mask plate,
To be applied in combination with the steel ball that is aligned of different-diameter, to change the gap between hollowed-out mask plate 7 and substrate bracket 6, to accommodate not
The substrate 1 of stack pile.Three sets of location holes on hollowed-out mask plate and substrate bracket are respectively illustrated, often set location hole includes in Figure 11
The location hole of four formed objects, wherein location hole a, b, c are located on substrate bracket, and location hole a ', b ', c ' are located at hollowed-out mask plate
On, location hole a, b, c are used cooperatively with location hole a ', b ', c ' respectively.Wherein, hollowed-out mask plate and substrate bracket can be using gold
Belong to (as rustless steel), insulant or semi-conducting material (as monocrystalline silicon piece) to make.The surrounding of hollowed-out mask plate can be with reinforcing
Plate is reinforced, to increase the intensity of hollowed-out mask plate.
After substrate bracket and hollowed-out mask plate complete to be aligned and position, available mechanical clamp is by substrate bracket-hollowed-out mask plate
Assembly fix.
Preferably, the manufacturing process of device includes the deposition of p-type thermoelectric arm successively, and N-shaped thermoelectric arm deposits, barrier layer heavy
The long-pending deposition with connection electrode (containing terminals).Following process: the deposition of connection electrode (containing terminals) can also be included successively,
The deposition on barrier layer, the deposition of p-type thermoelectric arm, N-shaped thermoelectric arm deposits.After deposition makes, device needs in vacuum or inertia
Make annealing treatment in atmosphere.
As shown in Figure 1, when p-type and N-shaped thermoelectricity in all parallel and every group of thermocouple unit of all thermoelectric arms of device
When the position of arm all differs a translational movement dx, two blocks of hollowed-out mask plates defining p-type and N-shaped thermoelectric arm can be merged into one
Block thermoelectric arm hollowed-out mask plate, now needs to make two sets of location holes on substrate bracket and hollowed-out mask plate.Figure 12 a and Figure 12 b
Show such two sets of location holes, as an example, often set location hole is all made up of three sets of various sizes of location holes again, its
In, two sets of location holes on substrate bracket be respectively first set location hole (x=a, b, c) and second set of location hole (xx=aa, bb,
Cc), second set of location hole has a displacement with respect to first set location hole, and this displacement is in thermoelectric arm translation direction (as Figure 12 a
With x direction in Figure 12 b) on component be dx, the component on being perpendicularly to the direction (y direction in as Figure 12 a and Figure 12 b) is
dy；Thermoelectric arm hollowed-out mask plate also accordingly makes two sets of location holes, including first set location hole (x '=a ', b ', c ') and the
Two sets of location holes (xx '=aa ', bb ', cc '), second set of location hole translates in thermoelectric arm with respect to the displacement of first set location hole
Component on direction (as x direction in Figure 12 a and Figure 12 b) is zero, is being perpendicularly to the direction (y direction in as Figure 12 a and Figure 12 b)
On component be dy.
When for depositing p-type and N-shaped thermoelectric arm, need with the use of location hole x, x ', xx and xx ', such as in order to heavy
Long-pending p-type thermoelectric arm, first steel ball is positioned at the b set location hole of substrate bracket, thermoelectric arm hollowed-out mask plate is placed on steel ball, makes
Obtain in the b ' set location hole that steel ball snaps on mask plate, complete to be aligned.(see Figure 13) after completing the deposition of p-type thermoelectric arm,
Be aligned steel ball is positioned at the bb ' set location hole of substrate bracket, thermoelectric arm hollowed-out mask plate is placed on steel ball so that steel ball card
Enter in the bb ' set location hole on mask plate, complete to be aligned, then carry out the deposition of N-shaped thermoelectric arm.(see Figure 14)
When all of thermoelectric arm of device as shown in Figure 2 is all radially distributed and every group of heat round a center of circle o
When the angle between p-type and N-shaped thermoelectric arm is all θ in galvanic couple unit, can will define the hollow out of p-type and N-shaped thermoelectric arm
Mask plate is merged into mask plates, now needs to make centered on the o and o ' of the center of circle respectively on substrate bracket and hollowed-out mask plate
Make two sets location holes, as shown in Figure 15 a and Figure 15 b, two sets of location holes on substrate bracket respectively first set location hole a and the
Two sets of location hole aa, between second set of location hole aa and o, between line and first set location hole a and o, the angle of line is θ, the
Between the distance between two sets of location hole aa and o and first set location hole a and o, the difference of distance is dr；In thermoelectric arm hollowed-out mask
Two sets of location holes are also made on plate, including first set location hole a ' and second set of location hole aa ', second set of location hole aa ' and o '
Between between line and first set location hole a ' and o ' angle of line be zero, the distance between second set of location hole aa ' and o '
The difference of distance is dr and first set location hole a ' and o between.
When depositing p-type thermoelectric arm it is assumed that being positioned over steel ball at a set location hole of substrate bracket, thermoelectric arm hollow out is covered
Template is placed on steel ball so that a ' that steel ball snaps on mask plate covers in location hole, completes to be aligned.When completing p-type thermoelectric arm
Deposition after, by be aligned steel ball be positioned over substrate bracket aa set location hole at, thermoelectric arm hollowed-out mask plate is placed on steel ball, makes
Obtain in the aa ' set location hole that steel ball snaps on mask plate, complete to be aligned, then carry out the deposition of N-shaped thermoelectric arm.
A kind of preferred implementation of the manufacture method of the thin film thermoelectric device according to the present invention described in detail below, to adopt
With above-mentioned autoregistration hollowed-out mask plate technique, magnetic control splashes the technology of setting and metal thermal evaporation techniques, makes one on a glass substrate
Individual plane thin film thermoelectric device.
, as shown in figure 1, it is made up of 20 pairs of p-types and N-shaped thermoelectric arm, N-shaped arm and p-type arm are respectively for the structure of this thermo-electric device
Deposited by magnetically controlled sputter method, the equipment being used is the acs-4000-c4 magnetic control sputtering device of Japanese ulvac company, wherein p-type
The proportioning of quasiconductor target is bi0.5sb1.5te3The te of additional about 4wt%, the proportioning of n-type semiconductor target is bi2te2.7se0.3.
1) substrate bracket and two blocks of hollowed-out mask plates are made first, they adopt stainless steel material processing and fabricating, hollowed-out mask
The periphery of plate is fixed with fixed plate 12 by spot welding.Wherein, substrate bracket and thermoelectric arm mask plate make respectively have first set and
Second set of location hole, often in set location hole again the location hole containing three sets different-diameters (diameter is respectively 0.97mm, 0.99mm with
0.95mm), so can be with a mask plates depositing p-type and N-shaped thermoelectric arm, this template is used for defining the width of the perforate of thermoelectric arm
Spend for 100 μm；Separately there is one piece of mask plate as shown in Figure 10, for depositing connection electrode (containing terminals), with thermoelectric arm mask
Plate is compared, and only making above it has first set location hole (x=a ', b ', c ').
2) the blank glass piece substrate of 22mm × 35mm × 0.16mm size is pasted and be fixed on substrate bracket, according to substrate
Thickness select the diameter of steel ball and location hole, reduce the distance of hollowed-out mask plate and substrate surface as far as possible, deposited with reducing
The widthization of figure in journey, but with mask plate and substrate without impinging on together be limited, so that the figure that will deposit to be avoided damage on substrate.
By choose four steel balls be placed on substrate bracket determined by certain set (as b set) at first set location hole (Figure 13), then will
The hollowed-out mask plate defining thermoelectric arm is placed on steel ball, somewhat moves mask plate so that steel ball snaps in corresponding the on mask plate
In a set of location hole (as b ' set), complete to be aligned and position (Figure 13).
3) fix completing the fixture shown in substrate bracket-hollowed-out mask plate assembly Fig. 8 of be aligned, and tighten screw
Deng securing member.
4) utilize magnetically controlled sputter method first depositing n-type thermoelectric arm on substrate.Deposition front cavity background pressure be 1.0 ×
10-4Pa, during deposition, substrate does not heat, and high-purity argon gas flow is 25sccm, and the power of adopted radio frequency (rf) power supply is 40w, sinks
The long-pending time is 3600s, and during sputtering, cavity background pressure is 1.8 × 10-1pa.
5), after completing the deposition of N-shaped thermoelectric arm, remove fixture, and thermoelectric arm hollowed-out mask plate, steel ball is placed on lining
(as covered using b in step 2, then location hole is covered using bb now, other is analogized) on corresponding second set of location hole on collet,
Again thermoelectric arm hollowed-out mask plate is placed on steel ball, somewhat moves mask plate so that steel ball snaps in corresponding second on mask plate
Set location hole (as bb ' set), completes to be aligned and positions (Figure 14)..
6) substrate bracket-hollowed-out mask plate assembly fixture completing be aligned is fixed, and tightened the securing members such as screw.
7) utilize magnetically controlled sputter method depositing p-type thermoelectric arm on substrate.Deposition front cavity background pressure is 1.9 × 10- 4Pa, during deposition, substrate does not heat, and high-purity argon gas flow is 25sccm, and the power of adopted radio frequency (rf) power supply is 50w, deposition
Time is 4800s, and during sputtering, cavity background pressure is 1.8 × 10-1pa.
8), after completing the deposition of p-type thermoelectric arm, remove fixture, and thermoelectric arm hollowed-out mask plate, steel ball will be directed at again
It is placed on the first set location hole (as b set) on substrate bracket, then the hollowed-out mask plate that connection electrode (containing terminals) will be defined
It is placed on steel ball, somewhat move mask plate so that steel ball snaps on corresponding location hole (as b ' set) on mask plate, it is right to complete
Accurate.
9) fix completing the fixture shown in substrate bracket-hollowed-out mask plate assembly Figure 16 of be aligned, and tighten spiral shell
The securing members such as silk.
10) metal fever evaporating device de-posited chromium layer and layer gold are utilized, to make connection electrode and terminals, used equipment
Sbc-2 type metal coating machine for BeiJing ZhongKe's tech.
11) under the conditions of 200 DEG C, using reducibility gas (hydrogen containing 10% and 90% argon), 1 is carried out to device
The annealing of individual hour.
Describe the preferred embodiment of the present invention above in association with accompanying drawing in detail, but, the present invention is not limited to above-mentioned reality
Apply the detail in mode, in the range of the technology design of the present invention, multiple letters can be carried out to technical scheme
Monotropic type, these simple variant belong to protection scope of the present invention.
It is further to note that each particular technique feature described in above-mentioned specific embodiment, in not lance
In the case of shield, can be combined by any suitable means, in order to avoid unnecessary repetition, the present invention to various can
The compound mode of energy no longer separately illustrates.
Additionally, combination in any can also be carried out between the various different embodiment of the present invention, as long as it is without prejudice to this
The thought of invention, it equally should be considered as content disclosed in this invention.
Claims (18)
1. a kind of manufacture method of plane thin film thermoelectric device is it is characterised in that this manufacture method includes:
Step one: make hollowed-out mask plate (7,8,9), the pierced pattern of this hollowed-out mask plate is used for limiting described plane thin film
At least part of pattern of thermo-electric device, and substrate (1) is fixed on substrate bracket (6)；
Step 2: in the upper relative at least a set of positioning of forming position respectively of described substrate bracket (6) and hollowed-out mask plate (7,8,9)
Hole (10), often covers described location hole and includes at least three location holes (10), by the upper placement positioning of described location hole (10)
Ball (11) with by described hollowed-out mask plate (7,8,9) compartment of terrain location and installation on described substrate bracket (6)；
Step 3: described substrate bracket (6) and hollowed-out mask plate (7,8,9) clamping are fixed, using physical gas phase deposition technology simultaneously
Complete on described substrate (1) through described hollowed-out mask plate (7,8,9) this hollowed-out mask plate (7,8,9) pierced pattern heavy
Long-pending making.
2. the manufacture method it is characterised in that be used for of plane thin film thermoelectric device according to claim 1 formed described
The described hollowed-out mask plate (7,8,9) of the pattern of plane thin film thermoelectric device is polylith, and described manufacture method also includes:
Step 4: change described hollowed-out mask plate (7,8,9) and position, and/or will complete to deposit the described hollowed-out mask making
Reorientate after plate (7,8,9) dismounting clamping and shift position, repeat step three, until completing the whole of described thin film thermoelectric device
The deposition of individual pattern makes.
3. the manufacture method of plane thin film thermoelectric device according to claim 2 is it is characterised in that in step 2,
The described location hole of many sets (10) are formed with described substrate bracket (6) or hollowed-out mask plate (7,8,9), often set includes at least three
Equivalently-sized described location hole (10), and it is different, thus passing through correspondingly sized respectively to cover the size of described location hole (10)
Detent ball (11) by described hollowed-out mask plate (7,8,9) location and installation on described substrate bracket (6) to adapt to different-thickness
Described substrate (1).
4. the manufacture method of plane thin film thermoelectric device according to claim 2 is it is characterised in that described plane is thin
Film thermo-electric device includes shape identical multiple p-type thermoelectric arm and N-shaped thermoelectric arm, the plurality of p-type thermoelectric arm and N-shaped thermoelectric arm phase
Mutually it is arranged alternately in parallel and equidistantly, described manufacture method includes:
In step one, make one piece of thermoelectric arm hollowed-out mask plate (7) to limit the figure of described p-type thermoelectric arm or N-shaped thermoelectric arm
Case；
In step 2, in described substrate bracket (6) or described one piece of thermoelectric arm hollowed-out mask plate (7) two sets of location holes of upper formation
(10), this two sets of location holes are along the arragement direction interval setting of described p-type thermoelectric arm and N-shaped thermoelectric arm, and this interval and phase
Adjacent described p-type thermoelectric arm is identical with the interval of N-shaped thermoelectric arm；Or, described substrate bracket (6) and described one piece of thermoelectric arm hollow out
Two sets of location holes (10) are formed on mask plate (7), when described substrate bracket (6) and described one block of thermoelectric arm hollowed-out mask plate respectively
(7) two sets in one of which described location holes (10) set along the arragement direction interval of described p-type thermoelectric arm and N-shaped thermoelectric arm
Put, and when this interval is identical with the interval of adjacent described p-type thermoelectric arm and N-shaped thermoelectric arm, described substrate bracket (6) and described
Two sets in the wherein another one of one piece of thermoelectric arm hollowed-out mask plate (7) described location holes (10) are along described p-type thermoelectric arm and N-shaped
The arragement direction of thermoelectric arm be spaced apart zero；
In step 3, described thermoelectric arm hollowed-out mask plate (7) is fixed with a set of location hole (10) in described two sets of location holes
Position is installed, and in step 4, described hollowed-out mask plate (7) is dismantled after clamping and shift position, with another set of location hole
(10) reorientate.
5. the manufacture method of plane thin film thermoelectric device according to claim 2 is it is characterised in that described plane is thin
Film thermo-electric device includes shape identical multiple p-type thermoelectric arm and N-shaped thermoelectric arm, the plurality of p-type thermoelectric arm and N-shaped thermoelectric arm edge
Circumferencial direction is alternately equiangularly spaced to be arranged and radially diverges, and described manufacture method includes:
In step one, make one piece of thermoelectric arm hollowed-out mask plate (7) to limit the figure of described p-type thermoelectric arm or N-shaped thermoelectric arm
Case；
In step 2, in described substrate bracket (6) or described one piece of thermoelectric arm hollowed-out mask plate (7) two sets of location holes of upper formation
(10), this two sets of location holes are along described circumferencial direction interval setting, this interval angles and adjacent described p-type thermoelectric arm and N-shaped
The interval angles of thermoelectric arm are identical；Or, difference shape on described substrate bracket (6) and described one piece of thermoelectric arm hollowed-out mask plate (7)
Become two sets of location holes (10), two in the one of which of described substrate bracket (6) and described one piece of thermoelectric arm hollowed-out mask plate (7)
Cover described location hole (10) along described circumferencial direction interval setting, this interval angles and adjacent described p-type thermoelectric arm and N-shaped heat
When the interval angles of electric arm are identical, in the wherein another one of described substrate bracket (6) and described one piece of thermoelectric arm hollowed-out mask plate (7)
Two sets of described location holes (10) be zero along the interval angles of described circumferencial direction；
In step 3, described hollowed-out mask plate (7) is installed with a set of location hole positioning (10) in described two sets of location holes,
And in step 4, described hollowed-out mask plate (7) is dismantled after clamping and shift position, again fixed with another set of location hole (10)
Position.
6. the manufacture method of plane thin film thermoelectric device according to claim 2 is it is characterised in that cover in described hollow out
The surrounding of template (7,8,9) installs fixed plate (12) additional.
7. the manufacture method of plane thin film thermoelectric device according to claim 2 is it is characterised in that in step 3,
Described substrate bracket (6) and hollowed-out mask plate (7,8,9) are fixed on upper clamping plate (13) and lower dress by securing member (15) clamping
Between clamping plate (14), the substrate bracket (6) being fixed with described substrate (1) is placed on lower clamping plate (14), described upper clamping plate
(13) it is provided with opening to expose described substrate (1).
8. the manufacture method of plane thin film thermoelectric device according to claim 7 is it is characterised in that described upper clamping plate
(13) multiple installing holes (16,17) and are correspondingly provided with lower clamping plate (14), the plurality of installing hole (16,17) is around being placed in
State described substrate (1) setting on lower clamping plate (14), described securing member (15) passes through described installing hole (16,17) to fasten
State clamping plate (13) and lower clamping plate (14).
9. the manufacture method of plane thin film thermoelectric device according to claim 2 is it is characterised in that described substrate (1)
Material with hollowed-out mask plate (7,8,9) is metal, insulator or quasiconductor.
10. the manufacture method of plane thin film thermoelectric device according to claim 2 is it is characterised in that described physics gas
Phase deposition technique is molecular beam epitaxy deposition technology, sputter-deposition technology, pulsed laser deposition technique, electron-beam evaporation skill
Art or thermal evaporation deposition technology.
The manufacture method of the 11. plane thin film thermoelectric device according to any one in claim 2-10, its feature exists
In this manufacture method also includes step 5: will complete to deposit the described plane thin film thermoelectric device making in vacuum or lazy
Made annealing treatment in property atmosphere.
A kind of 12. producing devices of plane thin film thermoelectric device are it is characterised in that this producing device includes substrate (1), substrate
Support (6), polylith hollowed-out mask plate (7,8,9) and clamping mechanism, described substrate (1) is fixed on described substrate bracket (6), described engraves
The pierced pattern of empty mask plate (7,8,9) is used for limiting at least part of pattern of described plane thin film thermoelectric device；
Wherein, described substrate bracket (6) respectively forming position relative at least a set of location hole upper with hollowed-out mask plate (7,8,9)
(10), often cover described location hole and include at least three location holes (10), with by the upper placement positioning of described location hole (10)
Ball (11) by described hollowed-out mask plate (7,8,9) compartment of terrain location and installation on described substrate bracket (6), use by described clamping mechanism
In the fixing described substrate bracket (6) of clamping and hollowed-out mask plate (7,8).
The producing device of 13. plane thin film thermoelectric device according to claim 12 is it is characterised in that described substrate bracket
(6) spaced many sets location hole (10) and/or are formed with described hollowed-out mask plate (7,8,9).
The producing device of 14. plane thin film thermoelectric device according to claim 13 is it is characterised in that described cover is determined more
Position hole (10) is two sets, and the size of each set location hole (10) in this two sets of location holes is different.
The producing device of 15. plane thin film thermoelectric device according to claim 13 is it is characterised in that described cover is determined more
Position hole (10) is two sets, this two sets of location holes along the circumferential direction equiangularly spaced setting.
The producing device of 16. plane thin film thermoelectric device according to claim 12 is it is characterised in that described hollow out is covered
The surrounding of template (7,8,9) adds fixed plate (12).
The producing device of 17. plane thin film thermoelectric device according to claim 12 is it is characterised in that described clamping machine
Structure includes clamping plate (13) and lower clamping plate (14), and the substrate bracket (6) being fixed with described substrate (1) is placed in lower clamping plate
(14), on, described upper clamping plate (13) is provided with opening to expose described substrate (1).
The producing device of 18. plane thin film thermoelectric device according to claim 17 is it is characterised in that described upper clamping
Multiple installing holes (16,17) are correspondingly provided with plate (13) and lower clamping plate (14), the plurality of installing hole (16,17) is around being placed in
Described substrate (1) setting on described lower clamping plate (14), securing member (15) passes through described installing hole (16,17) described to fasten
Upper clamping plate (13) and lower clamping plate (14).
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| TWI718731B (en) * | 2019-10-29 | 2021-02-11 | 國立中興大學 | Thermoelectric unit and power generation device with the thermoelectric unit and piezoelectric unit |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2915882Y (en) * | 2006-05-30 | 2007-06-27 | 南昌大学 | Rotary mask device for vacuum coating |
| CN101533887A (en) * | 2009-04-13 | 2009-09-16 | 瀚宇博德科技（江阴）有限公司 | Method for manufacturing thermoelectric cell of bottom board of printed circuit board and structure thereof |
| CN103151452A (en) * | 2013-03-26 | 2013-06-12 | 中国航天科工集团第二研究院二〇三所 | Method for producing planar thermopile for thermometers |
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| JP2001234327A (en) * | 2000-02-18 | 2001-08-31 | Murata Mfg Co Ltd | Jig for sputtering |
| US20130019918A1 (en) * | 2011-07-18 | 2013-01-24 | The Regents Of The University Of Michigan | Thermoelectric devices, systems and methods |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2915882Y (en) * | 2006-05-30 | 2007-06-27 | 南昌大学 | Rotary mask device for vacuum coating |
| CN101533887A (en) * | 2009-04-13 | 2009-09-16 | 瀚宇博德科技（江阴）有限公司 | Method for manufacturing thermoelectric cell of bottom board of printed circuit board and structure thereof |
| CN103151452A (en) * | 2013-03-26 | 2013-06-12 | 中国航天科工集团第二研究院二〇三所 | Method for producing planar thermopile for thermometers |
Non-Patent Citations (1)
| Title |
|---|
| "Multistage Planar Thermoelectric Microcoolers";Andrew J. Gross et al.;《JOURNAL OF MICROELECTROMECHANICAL SYSTEMS》;20111005;第20卷(第5期);第1204页左栏倒数第1行-第27行及附图2(a)-2(c) * |
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