CN108933183A - Preparation method based on silicon-graphene photodetector - Google Patents
Preparation method based on silicon-graphene photodetector Download PDFInfo
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- CN108933183A CN108933183A CN201810715873.9A CN201810715873A CN108933183A CN 108933183 A CN108933183 A CN 108933183A CN 201810715873 A CN201810715873 A CN 201810715873A CN 108933183 A CN108933183 A CN 108933183A
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- 239000002184 metal Substances 0.000 claims abstract description 96
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 89
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 89
- 239000010703 silicon Substances 0.000 claims abstract description 89
- 239000000758 substrate Substances 0.000 claims abstract description 60
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 47
- 238000010438 heat treatment Methods 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 23
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- 229910052737 gold Inorganic materials 0.000 claims description 8
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- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- RZVXOCDCIIFGGH-UHFFFAOYSA-N chromium gold Chemical compound [Cr].[Au] RZVXOCDCIIFGGH-UHFFFAOYSA-N 0.000 claims description 6
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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Abstract
Preparation method provided by the invention based on silicon-graphene photodetector, the substrate using soft fixing layer as photodetector, improves the flexibility of device；In addition using SOI substrate as the forerunner for preparing detector, the top layer silicon and graphene for using SOI substrate are as hetero-junctions, only one atomic thickness of graphene, the thickness also very little of top layer silicon simultaneously, so the flexible better effect of detector further improves the flexibility of entire device after release, the usage scenario for expanding detector can be applied to detector in following wearable device；Finally, the graphical processing and the formation of the first metal electrode and the second metal electrode of SOI substrate are compatible with CMOS technology, to enormously simplify preparation process, cost is reduced.
Description
Technical field
The invention belongs to semiconductor fields and photoelectricity integration field, more particularly to a kind of based on silicon-graphene flexibility
The preparation method of photodetector.
Background technique
The detection of optical signal is the important ring in spectral measurement, is used in different occasions and for different purposes
Detector it is also different, it is most important consideration be detector application wave-length coverage, detectivity and response time.Light is visited
Surveying device is the device that radiation energy is changed into another physical quantity convenient for measurement, it of a great variety, in general can be with
According to generated physical effect on the detector, it is divided into optothermal detector, photodetector and optical pressure detector.
Photodetector is that radiation energy is changed into current or voltage signal to measure, and is most-often used optical signal
Detector.It is mainly characterized by: detectivity is high, and time response is fast, can carry out to the transient change of optical radiation power
Measurement, but there is apparent optical wavelength to select characteristic for it.Photodetector divides inner photoeffect device and external photoeffect device again
Part, inner photoeffect are to cause electron motion state in material by the interaction of light and detector target surface solid material
Variation, and then cause the variation of material electrical properties.
Photodetector has extensive use in military and national economy every field.In visible light or near infrared band master
It is used for radionetric survey and detection, industry automatic control, Photometric Measurement etc.；It is mainly used for missile guidance, infrared in infrared band
Thermal imaging, infrared remote sensing etc..
Graphene (Graphene) is a kind of carbon atom with sp2Hybridized orbit forms hexagon, in honeycomb lattice arrangement
Single layer two dimensional crystal.2004, the team of Novoselov and Geim, which are prepared to stablize at room temperature with micromechanics stripping method, to deposit
Graphene, started graphene research upsurge.In recent years, the material of graphene prepares, transfer, characterizes and partly leading
A series of researchs of body, the application on the function elements such as chemistry are unfolded in succession, and progress is rapid.Due to unique zero band gap of graphene
Band structure, the electron mobility of superelevation is (theoretically up to 200,000cm at room temperature2·V-1·s-1), the electricity of nearly ballistic transport
It the features such as sub- property (mean free path of electronics reaches sub-micrometer scale), high-termal conductivity, from transistor to chemical sensor, then arrives
There is very big application potential in the fields such as nano-electromechanical device；Since its unique optical absorption characteristics (only has the absorptivity of light
2.3%, and light absorbing wave-length coverage covers infrared light, it is seen that light and ultraviolet light), application of the graphene on photoelectric device
Gradually realized by people, and is considered as most potential one of application direction.
Excellent detection performance, but the substrate due to using have been achieved currently based on silicon-graphene photodetector
The generally thickness of rigid substrate or the silicon used is very big, causes photodetector not have flexibility, limits usage scenario, nothing
Method is integrated into following wearable device.
For these reasons, it is necessary to which a kind of can effectively improve based on silicon-graphene photodetector flexibility is provided
Preparation method be necessary.
Summary of the invention
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide a kind of based on silicon-graphene light
The preparation method of electric explorer, the silicon that the substrate for solving photodetector in the prior art is generally rigid substrate or uses
Thickness is very big, causes photodetector not have flexibility, limits the problem of usage scenario of photodetector etc..
In order to achieve the above objects and other related objects, the present invention provides a kind of based on silicon-graphene photodetector
Preparation method, the preparation method includes at least:
1) SOI substrate is provided, the SOI substrate includes body silicon substrate, insulating layer and top layer silicon, the thickness of the top layer silicon
Degree is in 500nm or less；
2) spaced first opening and the second opening are etched in the top layer silicon, wherein first opening
And second opening runs through the top layer silicon；
3) in forming the first metal electrode in first opening and in the top layer silicon of part, in second opening
The second metal electrode is formed, second metal electrode and the side wall of the top layer silicon have gap；
4) graphene layer is formed, the graphene layer is formed in the top layer silicon, and across the gap and described the
Two metal electrodes connection, wherein the graphene layer and first metal electrode are spaced apart；
5) fixing layer is formed in the body structure surface that step 4) obtains；
6) the body silicon substrate and the insulating layer are removed, to appear the top layer silicon, first metal electrode and institute
State the second metal electrode.
Preferably, the thickness of the top layer silicon is in 200nm or less.
Preferably, step 3) grows first metal electrode and second metal electrode using lift-off technique,
Comprising steps of
3-1) in the top layer silicon, first opening is upper and described second is open upper spin coating photoresist, utilize photoetching
Define the position of first metal electrode and second metal electrode；
The position of first metal electrode and second metal electrode will 3-2) be needed to form using developing technique
The photoresist removal；
Metal layer 3-3) is formed in the body structure surface that step 3-2) is obtained in the way of electron beam evaporation or radio-frequency sputtering,
And be put into acetone or N-Methyl pyrrolidone, the metal layer on the photoresist and the photoresist is removed, nothing is retained
The metal layer at photoresist.
Preferably, step 4) comprising steps of
4-1) using chemical vapour deposition technique in forming the graphene layer in a target substrate；
The graphene layer 4-2) is transferred to using PMMA secondary transfer method the body structure surface of step 3) acquisition；
4-3) the graphical graphene layer, only retain in the top layer silicon of remaining part, the top layer silicon with it is described
The graphene layer on the insulating layer between second metal electrode and on second metal electrode.
Preferably, step 5) comprising steps of
5-1) in step 4) obtain body structure surface spin coating fixer, spin speed between 1000 revs/min~1500 turns/
Between minute；
5-2) in heating the fixer on hot plate, so that the fixer is cured as the fixing layer and attaches to described
In SOI substrate, heating temperature is between 230 DEG C~250 DEG C, and heating time is between 40min~60min.
Preferably, step 5) comprising steps of
5-1) in step 4) obtain body structure surface spin coating fixer, spin speed between 1000 revs/min~1500 turns/
Between minute；
5-2) in heating the fixer on hot plate, so that the fixer is cured as film and attaches to the SOI lining
On bottom, heating temperature is between 140 DEG C~160 DEG C, and heating time is between 2min~3min；
Step 5-1 5-3) is repeated several times) and step 5-2) reach thickness requirement to the film；
5-4) in heating the film on the hot plate, so that the film hardening is the fixing layer and attaches to described
In SOI substrate, heating temperature is between 230 DEG C~250 DEG C, and heating time is between 40min~60min.
Preferably, step 6) comprising steps of
The window until insulating layer 6-1) is etched in the body silicon substrate；
Wet etching 6-2) is used, by insulating layer described in the opening etch, until the insulating layer is etched completely,
The body silicon substrate is also completely removed simultaneously.
Further, step 6-1) in, etch multiple windows, the diameter of the window between 5 μm~10 μm,
The circle center distance of adjacent two window is between 100 μm~200 μm.
Further, the insulating layer includes silica, and the etching solution of the wet etching includes 10% hydrofluoric acid
Solution.
Preferably, the material of first metal electrode includes gold or chromium gold, the material of second metal electrode include
Gold or chromium gold.
Preferably, the material of the fixing layer includes polyimides.
As described above, the preparation method provided by the invention based on silicon-graphene photodetector, is consolidated using soft
Substrate of the given layer as photodetector, improves the flexibility of device；In addition before using SOI substrate as detector is prepared
It drives, the top layer silicon and graphene for using SOI substrate are as hetero-junctions, only one atomic thickness of graphene, while top layer silicon
Thickness also very little expand so the flexible better effect of detector further improves the flexibility of entire device after release
The usage scenario of detector can be applied to detector in following wearable device；Finally, SOI substrate is graphical
Processing and the formation of first metal electrode and second metal electrode are compatible with CMOS technology, to enormously simplify
Preparation process reduces cost.
Detailed description of the invention
Fig. 1 is shown as the flow chart of the preparation method of the invention based on silicon-graphene photodetector.
Fig. 2 is shown as the knot that the step 1) of the preparation method of the invention based on silicon-graphene photodetector is presented
Structure schematic diagram.
Fig. 3 is shown as the knot that the step 2) of the preparation method of the invention based on silicon-graphene photodetector is presented
Structure schematic diagram.
The step 3) that Fig. 4 a- Fig. 4 d is shown as the preparation method of the invention based on silicon-graphene photodetector is in
Existing structural schematic diagram.
The step 4) that Fig. 5 a- Fig. 5 c is shown as the preparation method of the invention based on silicon-graphene photodetector is in
Existing structural schematic diagram.
Fig. 6 is shown as the knot that the step 5) of the preparation method of the invention based on silicon-graphene photodetector is presented
Structure schematic diagram.
The step 6) that Fig. 7 a- Fig. 7 b is shown as the preparation method of the invention based on silicon-graphene photodetector is in
Existing structural schematic diagram.
Component label instructions
1 SOI substrate
11 body silicon substrates
12 insulating layers
13 top layer silicons
2 first openings
3 second openings
4 first metal electrodes
41 photoresists
42 metal layers
5 second metal electrodes
6 graphene layers
61 target substrates
7 fixing layers
8 windows
S1~S6 step
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Other advantages and efficacy of the present invention can be easily understood for disclosed content.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints and application, without departing from
Various modifications or alterations are carried out under spirit of the invention.
Please refer to FIG. 1 to FIG. 7 b.It should be noted that diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of invention, only shown in schema then with related component in the present invention rather than package count when according to actual implementation
Mesh, shape and size are drawn, when actual implementation kenel, quantity and the ratio of each component can arbitrarily change for one kind, and its
Assembly layout kenel may also be increasingly complex.
The present invention provides a kind of preparation method based on silicon-graphene photodetector, as shown in Figure 1, the preparation
Method at least includes the following steps:
S1, provides a SOI substrate, and the SOI substrate includes body silicon substrate, insulating layer and top layer silicon, the top layer silicon
Thickness is in 500nm or less；
S2 etches spaced first opening and the second opening in the top layer silicon, wherein first opening
And second opening runs through the top layer silicon；
S3, in forming the first metal electrode in first opening and in the top layer silicon of part, in second opening
The side wall of the second metal electrode of interior formation, second metal electrode and the top layer silicon has gap；
S4 forms graphene layer, and the graphene layer is formed in the top layer silicon, and across the gap and described the
Two metal electrodes connection, wherein the graphene layer and first metal electrode are spaced apart；
S5 forms fixing layer in the body structure surface that step 4) obtains；
S6 removes the body silicon substrate and the insulating layer, to appear the top layer silicon, first metal electrode and institute
State the second metal electrode.
The preparation method of the invention based on silicon-graphene photodetector is made to be situated between in detail below with reference to specific attached drawing
It continues.
Step S1 is first carried out, as shown in Fig. 2, provide a SOI substrate 1, the SOI substrate 1 include body silicon substrate 11, absolutely
Edge layer 12 and top layer silicon 13, the thickness of the top layer silicon 13 is in 500nm or less.
Preferably, the thickness of the top layer silicon 13 200nm once.Select the thickness of the top layer silicon 13 thinner, it is subsequent
After the body silicon substrate 11 and the insulating layer 12 discharge, the flexibility of the top layer silicon 13 is better.
Then execute step S2, as shown in figure 3, etched in the top layer silicon 13 it is spaced first opening 2 and
Second opening 3, wherein first opening 2 and second opening 3 run through the top layer silicon 13.
In the step, first opening 2 and second opening 3, i.e., the graphical top layer silicon 13, purpose are etched
It is in order to form the region based on silicon-graphene photodetector described in subsequent preparation, wherein by the top layer silicon 13 by institute
It states the first opening 2 and second opening 3 is spaced apart.Can be obtained using existing any method first opening 2 and
Second opening 3.The first opening 2 and second opening 3 are obtained using the method for chemical wet etching in this implementation.
Then step S3 is executed, as shown in figure 4d, in forming the in first opening 2 and in the top layer silicon 13 of part
One metal electrode 4, in forming the second metal electrode 5 in second opening 3, second metal electrode 5 and the top layer silicon
13 side wall has gap.
Need exist for explanation, after being subsequently formed the hetero-junctions of top layer silicon and graphene, first metal electrode 4
Effect is is electrically connected with the bottom silicon 13 realization, the extraction electrode as the top layer silicon 13；Second metal electrode 5
Effect is is electrically connected with graphene realization, the extraction electrode as the graphene.So second metal electrode 5 needs
It is spaced apart with the top layer silicon 13, to keep electric isolution between the two.
As an example, the material of first metal electrode 4 includes gold or chromium gold, the material of second metal electrode 5
Including gold or chromium gold.
First metal electrode 4 and second metal electrode 5 can be grown using lift-off technique, as Fig. 4 a~
Shown in Fig. 4 d, step is specifically included:
As shown in fig. 4 a, step 3-1), in the top layer silicon 13, in first opening 2 and in second opening 3
Spin coating photoresist 41 goes out the position of first metal electrode 4 and second metal electrode 5 using lithographic definition.
As shown in Figure 4 b, step 3-2), first metal electrode 4 and described second will be needed to form using developing technique
The photoresist 41 of the position of metal electrode 5 removes.
It should be noted that according to different situations, the position of first metal electrode 4 and second metal electrode 5
Can be different, i.e., described first metal electrode 4 can be partially filled with first opening 2, can also be filled up completely described first
Opening 2, coverage area of first metal electrode 4 in the top layer silicon 13 is also adjustable, second metal electrode 5
Filling range in second opening 3 is also adjustable.
As shown in Fig. 4 c~Fig. 4 d, step 3-3), obtained in the way of electron beam evaporation or radio-frequency sputtering in step 3-2)
The body structure surface obtained forms metal layer 42 (as illustrated in fig. 4 c), and is put into acetone or N-Methyl pyrrolidone, removes the light
The metal layer 42 in photoresist 41 and the photoresist 41 retains the metal layer 42 at unglazed photoresist 41 (such as Fig. 4 d institute
Show).
Since photoresist 41 is dissolved in acetone or N-Methyl pyrrolidone, so there is the place of photoresist 41, thereon described
Metal layer also can Automatic-falling, unglazed photoresist 41 place can then retain the metal layer 42.What needs to be explained here is that
After removing the extra metal layer 42, shaping can be carried out to the remaining metal layer 42, to form the institute of necessary requirement shape
State the first metal electrode 4 and second metal electrode 5 (as shown in figure 4d).
Then step S4 is executed, as shown in Figure 5 c, forms graphene layer 6, the graphene layer 6 is formed in the top layer silicon
It on 13, and is connect across the gap with second metal electrode 5, wherein the graphene layer 6 and the first metal electricity
Pole 4 is spaced apart.
The graphene layer 6 is formed in the present embodiment with the following method:
As shown in Figure 5 a, step 4-1), using chemical vapour deposition technique in forming the graphene in a target substrate 61
Layer 6.
As shown in Figure 5 b, step 4-2), the graphene layer 6 is transferred to by step 3) using PMMA secondary transfer method and is obtained
Body structure surface.
It should be noted that the method for shifting the graphene layer 6 can also be using any existing except the present embodiment
Transfer method, such as the method that can be directly by mechanically pulling off, it is not limited here.The present embodiment preferably uses PMMA to assist
Transfer method realizes the transfer of the graphene layer 6.
As shown in Figure 5 c, step 4-3), the graphical graphene layer 6 only retains the remaining part top layer silicon 13
On the insulating layer 12 between the upper, top layer silicon 13 and second metal electrode 5 and on second metal electrode 5
The graphene layer 6.
It should be noted that the needs of graphene layer 6 are spaced apart with first metal electrode 4, to keep
Electric isolution between the two.
Then step S5 is executed, as shown in fig. 6, forming fixing layer 7 in the body structure surface that step 4) obtains.
The fixing layer 7 is for the fixed hetero-junctions being subsequently formed, and the substrate as entire device uses, so needing institute
Fixing layer is stated with cementability, flexibility and non-conductive.In the present embodiment, the material of the fixing layer 7 includes polyimides.
Preparing the fixing layer 7 can be obtained using spin coating heating.That is, the body structure surface spin coating obtained prior to step 4)
Fixer, spin speed is between 1000 revs/min~1500 revs/min, and preferably 1000 revs/min of the present embodiment；Then
In heating the fixer on hot plate, so that the fixer is cured as the fixing layer 7 and attaches in the SOI substrate 1,
Heating temperature is between 230 DEG C~250 DEG C, and heating time, the present embodiment preferably heated temperature between 40min~60min
Degree is 250 DEG C, heating time 60min.Based on the thickness requirement of the fixing layer 7, can also repeat the above steps to increase
The thickness of the fixing layer 7.
Preparing the fixing layer 7 can also be obtained using another spin coating heating.That is, the structure obtained prior to step 4)
Surface spin coating fixer, spin speed is between 1000 revs/min~1500 revs/min, and preferably 1000 revs/min of the present embodiment
Clock；Then in heating the fixer on hot plate, so that the fixer is cured as film and attaches in the SOI substrate 1,
Heating temperature between 140 DEG C~160 DEG C, heating time between 2min~3min, the preferred heating temperature of the present embodiment
It is 150 DEG C, heating time 2min；Upper two step to the film is repeated several times and reaches thickness requirement；Finally on the hot plate
Heat the film so that the film hardening is the fixing layer 7 and to attach in the SOI substrate 1, heating temperature between
Between 230 DEG C~250 DEG C, heating time is between 40min~60min.
It finally executes step S6 and removes the body silicon substrate 11 and the insulating layer 12 as shown in Figure 7b, to appear described
Top layer silicon 13, first metal electrode 4 and second metal electrode 5.
In the present embodiment, the body silicon substrate 11 and the insulating layer 12 are removed using following step, the specific steps are as follows:
As shown in Figure 7a, step 6-1), the window 8 until insulating layer 12 is etched in the body silicon substrate 11.
Preferably, multiple windows can be equably etched in the body silicon substrate 11, uniform multiple windows are advantageous
In the uniform removal of the subsequent insulating layer 12.Preferably, the window can be formed using photoetching and reactive ion etching method
8。
As an example, the diameter of the window 8, between 5 μm~10 μm, the circle center distance of adjacent two window 8 is situated between
Between 100 μm~200 μm, in the present embodiment, the diameter of the window 8 is 10 μm, the circle center distance of adjacent two window 8
It is 100 μm.
As shown in Figure 7b, step 6-2), using wet etching, the insulating layer 12 is etched by the window 8, until institute
It states insulating layer 12 to be etched completely, while the body silicon substrate 11 is also completely removed.
As an example, the insulating layer includes silica, the etching solution of the wet etching includes 10% hydrofluoric acid
Solution.
In conclusion the present invention provides a kind of preparation method based on silicon-graphene photodetector, comprising: provide
One SOI substrate, the SOI substrate include body silicon substrate, insulating layer and top layer silicon, and the thickness of the top layer silicon is in 500nm or less；
Spaced first opening and the second opening are etched in the top layer silicon, wherein first opening and described second
Opening runs through the top layer silicon；In forming the first metal electrode in first opening and in the top layer silicon of part, in described
The second metal electrode is formed in second opening, second metal electrode and the side wall of the top layer silicon have gap；Form stone
Black alkene layer, the graphene layer are formed in the top layer silicon, and are connect across the gap with second metal electrode,
In, the graphene layer and first metal electrode are spaced apart；Fixation is formed in the body structure surface that step 4) obtains
Layer；The body silicon substrate and the insulating layer are removed, to appear the top layer silicon, first metal electrode and second gold medal
Belong to electrode.Substrate of the present invention using soft fixing layer as photodetector, improves the flexibility of device；In addition it uses
SOI substrate is as the forerunner for preparing detector, and the top layer silicon for using SOI substrate and graphene are as hetero-junctions, and graphene is only
There is an atomic thickness, while the thickness of top layer silicon also very little, thus after release, the flexible better effect of detector, further
The flexibility for improving entire device expands the usage scenario of detector, so that detector is can be applied to the wearable of future and sets
In standby；Finally, the graphical processing and the formation of first metal electrode and second metal electrode of SOI substrate with
CMOS technology is compatible, to enormously simplify preparation process, reduces cost.So the present invention effectively overcomes in the prior art
Various shortcoming and have high industrial utilization value.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all without departing from the spirit and scope of the present invention, carries out modifications and changes to above-described embodiment.Cause
This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as
At all equivalent modifications or change, should be covered by the claims of the present invention.
Claims (11)
1. a kind of preparation method based on silicon-graphene photodetector, which is characterized in that the preparation method is at least wrapped
It includes:
1) SOI substrate is provided, the SOI substrate includes body silicon substrate, insulating layer and top layer silicon, and the thickness of the top layer silicon exists
500nm or less；
2) spaced first opening and the second opening are etched in the top layer silicon, wherein first opening and institute
The second opening is stated through the top layer silicon；
3) it in forming the first metal electrode in first opening and in the top layer silicon of part, is formed in second opening
The side wall of second metal electrode, second metal electrode and the top layer silicon has gap；
4) graphene layer is formed, the graphene layer is formed in the top layer silicon, and across the gap and second gold medal
Belong to electrode connection, wherein the graphene layer and first metal electrode are spaced apart；
5) fixing layer is formed in the body structure surface that step 4) obtains；
6) the body silicon substrate and the insulating layer are removed, to appear the top layer silicon, first metal electrode and described the
Two metal electrodes.
2. the preparation method according to claim 1 based on silicon-graphene photodetector, it is characterised in that: described
The thickness of top layer silicon is in 200nm or less.
3. the preparation method according to claim 1 based on silicon-graphene photodetector, it is characterised in that: step
3) first metal electrode and second metal electrode are grown using lift-off technique, comprising steps of
3-1) in the top layer silicon, first opening is upper and described second is open upper spin coating photoresist, utilize lithographic definition
The position of first metal electrode and second metal electrode out；
It will 3-2) be needed to form described in the position of first metal electrode and second metal electrode using developing technique
Photoresist removal；
Metal layer 3-3) is formed in the body structure surface that step 3-2) is obtained in the way of electron beam evaporation or radio-frequency sputtering, and is put
Enter in acetone or N-Methyl pyrrolidone, remove the metal layer on the photoresist and the photoresist, retains non-lithography
The metal layer of Jiao Chu.
4. the preparation method according to claim 1 based on silicon-graphene photodetector, it is characterised in that: step
4) comprising steps of
4-1) using chemical vapour deposition technique in forming the graphene layer in a target substrate；
The graphene layer 4-2) is transferred to using PMMA secondary transfer method the body structure surface of step 3) acquisition；
4-3) the graphical graphene layer, only retains in the top layer silicon of remaining part, the top layer silicon and described second
The graphene layer on the insulating layer between metal electrode and on second metal electrode.
5. the preparation method according to claim 1 based on silicon-graphene photodetector, it is characterised in that: step
5) comprising steps of
5-1) the body structure surface spin coating fixer obtained in step 4), spin speed is between 1000 revs/min~1500 revs/min
Between；
5-2) in heating the fixer on hot plate, so that the fixer is cured as the fixing layer and attaches to the SOI
On substrate, heating temperature is between 230 DEG C~250 DEG C, and heating time is between 40min~60min.
6. the preparation method according to claim 1 based on silicon-graphene photodetector, it is characterised in that: step
5) comprising steps of
5-1) the body structure surface spin coating fixer obtained in step 4), spin speed is between 1000 revs/min~1500 revs/min
Between；
5-2) in heating the fixer on hot plate, so that the fixer is cured as film and attaches in the SOI substrate,
Heating temperature is between 140 DEG C~160 DEG C, and heating time is between 2min~3min；
Step 5-1 5-3) is repeated several times) and step 5-2) reach thickness requirement to the film；
5-4) in heating the film on the hot plate, so that the film hardening is the fixing layer and attaches to the SOI
On substrate, heating temperature is between 230 DEG C~250 DEG C, and heating time is between 40min~60min.
7. the preparation method according to claim 1 based on silicon-graphene photodetector, it is characterised in that: step
6) comprising steps of
The window until insulating layer 6-1) is etched in the body silicon substrate；
Wet etching 6-2) is used, by insulating layer described in the opening etch, until the insulating layer is etched completely, simultaneously
The body silicon substrate is also completely removed.
8. the preparation method according to claim 7 based on silicon-graphene photodetector, it is characterised in that: step
In 6-1), multiple windows are etched, the diameter of the window is between 5 μm~10 μm, the center of circle of adjacent two window
Distance is between 100 μm~200 μm.
9. the preparation method according to claim 7 based on silicon-graphene photodetector, it is characterised in that: described
Insulating layer includes silica, and the etching solution of the wet etching includes 10% hydrofluoric acid solution.
10. the preparation method according to claim 1 based on silicon-graphene photodetector, it is characterised in that: described
The material of first metal electrode includes gold or chromium gold, and the material of second metal electrode includes gold or chromium gold.
11. the preparation method according to claim 1 based on silicon-graphene photodetector, it is characterised in that: described
The material of fixing layer includes polyimides.
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