CN104300964A - Novel silica-based magneto-electricity signal coupling device - Google Patents
Novel silica-based magneto-electricity signal coupling device Download PDFInfo
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- CN104300964A CN104300964A CN201410514942.1A CN201410514942A CN104300964A CN 104300964 A CN104300964 A CN 104300964A CN 201410514942 A CN201410514942 A CN 201410514942A CN 104300964 A CN104300964 A CN 104300964A
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Abstract
The invention relates to a novel silica-based magneto-electricity signal coupling device. The novel silica-based magneto-electricity signal coupling device comprises a signal current coil, a geometric giant magnetoresistance device and a signal processing integrated circuit. The signal processing integrated circuit comprises a constant-current source and a reading circuit. An external signal source inputs signal current to the signal current coil and generates magnetic fields, wherein the sizes and the directions of the magnetic fields are linearly relevant to the size and the direction of the signal current, and the signal current coil is arranged over the geometric giant magnetoresistance device and generates magnetic fields perpendicular to the surface of the geometric giant magnetoresistance device. The constant-current source provides constant current for the geometric giant magnetoresistance device so that the geometric giant magnetoresistance device can work in the optimal state. Voltage signals which remarkably change are obtained through the input end of the reading circuit according to the different sizes and the different directions of the magnetic fields, and are output after being amplified and shaped. No extra signal modulation circuit is needed, the structure is simple, and no mutual inductance influence exists between the rear end signal reading circuit and a front end input signal.
Description
Technical field
The invention belongs to signal coupling device technical field, relate to a kind of novel silicon base magnetoelectricity signal coupling device.
Background technology
Signal coupling device is a kind of basic module being widely used in the fields such as computer network, data-interface, electric and electronic, industrial automation, medical electronics.The basic function of signal coupling device realizes transfer of data under the state of electrical isolation, thus the damage to accessory circuit and interface device reducing earth loop noise, common-mode voltage effect and cause thus.The photoelectric coupled device of current extensive use, because its speed is slow, power consumption greatly, easily aging, be difficult to the essential defects such as integrated, just progressively replace by magnetoelectricity signal coupling device.ADI company of the U.S. develops iCoupler coupled device technologies (U.S. Patent Application No.: 09/838,520) based on mutual inductor; NVE company of the U.S. is based on giant magnetoresistance (GMR) technological development IsoLoop coupled device technologies (U.S. Patent Publication No.: US6,300,617).Wherein, the iCoupler coupled device technologies of ADI company needs first to provide a high-frequency signal to carry out modulation formation pulsed magnetic field to primary signal at signal input part, is then demodulated into primary signal again by the field signal that read coil receives.Circuit structure needed for this course of work is very complicated, and due to the mutual inductance effect between coil, cannot cut off the impact of rear end reading circuit on input end signal completely.The IsoLoop coupled device technologies of NVE company of the U.S. utilizes GMR device as signal receiving unit, can overcome the defect of coil mutual inductance technology.But the preparation due to GMR device needs to utilize unconventional technique, for the company manufacturing conventional cmos integrated circuit, extra equipment support is not had to complete.
Geometry Giant Magneto Resistance devices is a kind of novel Giant Magneto Resistance devices (patent publication No.: 102185100A).Its giant magnetoresistance effect is relevant with the physical dimension of device, and itself and conventional cmos integrated circuit preparation technology are completely compatible.
Summary of the invention
The present invention is directed to the deficiencies in the prior art, in conjunction with geometry Giant Magneto Resistance devices technology, provide the novel silicon base magnetoelectricity signal coupling device that a kind of and existing universal integrated circuit preparation technology is completely compatible.
The technical scheme that technical solution problem of the present invention is taked is:
The present invention comprises signal code coil, geometry Giant Magneto Resistance devices, signal processing integrated circuit, and described signal processing integrated circuit comprises constant-current source and reading circuit; Outside source is by signal code current input signal coil, produce the magnetic field relevant to the size of signal code and dimension linear, wherein signal code coil is arranged at directly over geometry Giant Magneto Resistance devices, produces the magnetic field perpendicular to geometry Giant Magneto Resistance devices surface; Constant-current source provides constant current for geometry Giant Magneto Resistance devices, makes geometry Giant Magneto Resistance devices work in optimum state, and according to the difference of magnetic field size and Orientation, the input of reading circuit obtains the voltage signal of marked change, exports after amplifying shaping.
Furtherly, described geometry Giant Magneto Resistance devices is silica-based geometry Giant Magneto Resistance devices, and its magnetic susceptibility direction is perpendicular to device surface direction.
Furtherly, described geometry Giant Magneto Resistance devices is silica-based geometry Giant Magneto Resistance devices, is provided with electrode, and electrode number is two or more.
Furtherly, described signal code coil, geometry Giant Magneto Resistance devices, signal processing integrated circuit are all prepared from by CMOS integrated circuit technology, and are integrated on same substrate and form monomer chip.
Beneficial effect of the present invention:
Compared with the iCoupler coupled device technologies of ADI company of the U.S., do not need extra signal modulation circuit, structure is simple, and back end signal reading circuit and front end input signal do not exist mutual inductance affects.
Compared with the IsoLoop coupled device technologies of NVE company of the U.S., completely compatible with existing conventional cmos integrated circuit preparation technology, do not need extra equipment and process step.
Accompanying drawing explanation
The structural representation of the silica-based magnetoelectricity signal coupling device of Fig. 1;
The technique sectional view of the silica-based magnetoelectricity signal coupling device of Fig. 2.
Embodiment
Below in conjunction with accompanying drawing, the invention will be further described.
The structural representation of silica-based magnetoelectricity signal coupling device of the present invention as depicted in figs. 1 and 2.This device comprises signal code coil 101, geometry Giant Magneto Resistance devices 102, signal processing integrated circuit 103 3 parts.Wherein, signal processing integrated circuit comprises constant-current source 104 and reading circuit 105 two electronic circuits.Signal code coil is arranged at directly over geometry Giant Magneto Resistance devices, produces the magnetic field perpendicular to geometry Giant Magneto Resistance devices surface.Constant-current source provides constant current for geometry Giant Magneto Resistance devices, makes geometry Giant Magneto Resistance devices work in optimum state.
Outside source 106, by signal code current input signal coil, produces the magnetic field relevant to the size of signal code and dimension linear.
According to the difference of magnetic field size and Orientation, the input of reading circuit can obtain the voltage signal of marked change, exports after amplifying shaping.
By above process, the output signal of this device and outside source realize electrical isolation state under Signal transmissions.
Claims (4)
1. a novel silicon base magnetoelectricity signal coupling device, is characterized in that: comprise signal code coil, geometry Giant Magneto Resistance devices, signal processing integrated circuit, described signal processing integrated circuit comprises constant-current source and reading circuit;
Outside source is by signal code current input signal coil, produce the magnetic field relevant to the size of signal code and dimension linear, wherein signal code coil is arranged at directly over geometry Giant Magneto Resistance devices, produces the magnetic field perpendicular to geometry Giant Magneto Resistance devices surface; Constant-current source provides constant current for geometry Giant Magneto Resistance devices, makes geometry Giant Magneto Resistance devices work in optimum state, and according to the difference of magnetic field size and Orientation, the input of reading circuit obtains the voltage signal of marked change, exports after amplifying shaping.
2. a kind of novel silicon base magnetoelectricity signal coupling device according to claim 1, is characterized in that: described geometry Giant Magneto Resistance devices is silica-based geometry Giant Magneto Resistance devices, and its magnetic susceptibility direction is perpendicular to device surface direction.
3. a kind of novel silicon base magnetoelectricity signal coupling device according to claim 1, it is characterized in that: described geometry Giant Magneto Resistance devices is silica-based geometry Giant Magneto Resistance devices, is provided with electrode, electrode number is two or more.
4. a kind of novel silicon base magnetoelectricity signal coupling device according to claim 1, it is characterized in that: described signal code coil, geometry Giant Magneto Resistance devices, signal processing integrated circuit are all prepared from by CMOS integrated circuit technology, and be integrated on same substrate and form monomer chip.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410514942.1A CN104300964B (en) | 2014-09-29 | 2014-09-29 | A kind of novel silicon base magnetoelectricity signal coupled apparatus |
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| CN201410514942.1A CN104300964B (en) | 2014-09-29 | 2014-09-29 | A kind of novel silicon base magnetoelectricity signal coupled apparatus |
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| CN104300964A true CN104300964A (en) | 2015-01-21 |
| CN104300964B CN104300964B (en) | 2018-01-30 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2446450A (en) * | 2007-02-07 | 2008-08-13 | John Davidson Hunter | Balanced line signal linear amplitude modulator using a magnetic resistance bridge sensor |
| CN101728377A (en) * | 2009-12-09 | 2010-06-09 | 钱正洪 | High speed magnetic electricity isolating signal coupling device compatible with photoelectric coupler |
| CN102148326A (en) * | 2010-12-31 | 2011-08-10 | 钱正洪 | Integrated magnetic electronic signal isolation coupling device and preparation process of integrated magnetic electronic signal isolation coupling device |
| CN102185100A (en) * | 2011-04-14 | 2011-09-14 | 清华大学 | Silicon-based geometrical giant magnetoresistance device and manufacturing method thereof |
| CN204089770U (en) * | 2014-09-29 | 2015-01-07 | 杭州电子科技大学 | Novel silicon base magnetoelectricity signal coupling device |
-
2014
- 2014-09-29 CN CN201410514942.1A patent/CN104300964B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2446450A (en) * | 2007-02-07 | 2008-08-13 | John Davidson Hunter | Balanced line signal linear amplitude modulator using a magnetic resistance bridge sensor |
| CN101728377A (en) * | 2009-12-09 | 2010-06-09 | 钱正洪 | High speed magnetic electricity isolating signal coupling device compatible with photoelectric coupler |
| CN102148326A (en) * | 2010-12-31 | 2011-08-10 | 钱正洪 | Integrated magnetic electronic signal isolation coupling device and preparation process of integrated magnetic electronic signal isolation coupling device |
| CN102185100A (en) * | 2011-04-14 | 2011-09-14 | 清华大学 | Silicon-based geometrical giant magnetoresistance device and manufacturing method thereof |
| CN204089770U (en) * | 2014-09-29 | 2015-01-07 | 杭州电子科技大学 | Novel silicon base magnetoelectricity signal coupling device |
Non-Patent Citations (1)
| Title |
|---|
| ROBERT FAYFIELD ET.: "Novel Galvanic Isolation Based on Spin Valve GMR Magnetic Field Sensors", 《PROCEEDINGS OF THE THIRTEENTH BIENNIAL，UNIVERSITY/GOVERNMENT/INDUSTRY MICROELECTRONICS SYMPOSIUM，1999》 * |
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