CN204089770U - Novel silicon base magnetoelectricity signal coupling device - Google Patents
Novel silicon base magnetoelectricity signal coupling device Download PDFInfo
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- CN204089770U CN204089770U CN201420568480.7U CN201420568480U CN204089770U CN 204089770 U CN204089770 U CN 204089770U CN 201420568480 U CN201420568480 U CN 201420568480U CN 204089770 U CN204089770 U CN 204089770U
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Abstract
The utility model relates to a kind of novel silicon base magnetoelectricity signal coupling device.The utility model comprises signal code coil, geometry Giant Magneto Resistance devices, signal processing integrated circuit, and described signal processing integrated circuit comprises constant-current source and reading circuit; Outside source is by signal code current input signal coil, produce the magnetic field relevant to the size of signal code and dimension linear, wherein signal code coil is arranged at directly over geometry Giant Magneto Resistance devices, produces the magnetic field perpendicular to geometry Giant Magneto Resistance devices surface; Constant-current source provides constant current for geometry Giant Magneto Resistance devices, makes geometry Giant Magneto Resistance devices work in optimum state, and according to the difference of magnetic field size and Orientation, the input of reading circuit obtains the voltage signal of marked change, exports after amplifying shaping.The utility model does not need extra signal modulation circuit, and structure is simple, and back end signal reading circuit and front end input signal do not exist mutual inductance affects.
Description
Technical field
The utility model belongs to signal coupling device technical field, relates to a kind of novel silicon base magnetoelectricity signal coupling device.
Background technology
Signal coupling device is a kind of basic module being widely used in the fields such as computer network, data-interface, electric and electronic, industrial automation, medical electronics.The basic function of signal coupling device realizes transfer of data under the state of electrical isolation, thus the damage to accessory circuit and interface device reducing earth loop noise, common-mode voltage effect and cause thus.The photoelectric coupled device of current extensive use, because its speed is slow, power consumption greatly, easily aging, be difficult to the essential defects such as integrated, just progressively replace by magnetoelectricity signal coupling device.ADI company of the U.S. develops iCoupler coupled device technologies (U.S. Patent Application No.: 09/838,520) based on mutual inductor; NVE company of the U.S. is based on giant magnetoresistance (GMR) technological development IsoLoop coupled device technologies (U.S. Patent Publication No.: US6,300,617).Wherein, the iCoupler coupled device technologies of ADI company needs first to provide a high-frequency signal to carry out modulation formation pulsed magnetic field to primary signal at signal input part, is then demodulated into primary signal again by the field signal that read coil receives.Circuit structure needed for this course of work is very complicated, and due to the mutual inductance effect between coil, cannot cut off the impact of rear end reading circuit on input end signal completely.The IsoLoop coupled device technologies of NVE company of the U.S. utilizes GMR device as signal receiving unit, can overcome the defect of coil mutual inductance technology.But the preparation due to GMR device needs to utilize unconventional technique, for the company manufacturing conventional cmos integrated circuit, extra equipment support is not had to complete.
Geometry Giant Magneto Resistance devices is a kind of novel Giant Magneto Resistance devices (patent publication No.: 102185100A).Its giant magnetoresistance effect is relevant with the physical dimension of device, and itself and conventional cmos integrated circuit preparation technology are completely compatible.
Summary of the invention
The utility model, for the deficiencies in the prior art, in conjunction with geometry Giant Magneto Resistance devices technology, provides the novel silicon base magnetoelectricity signal coupling device that a kind of and existing universal integrated circuit preparation technology is completely compatible.
The technical scheme that the utility model technical solution problem is taked is:
The utility model comprises signal code coil, geometry Giant Magneto Resistance devices, signal processing integrated circuit, and described signal processing integrated circuit comprises constant-current source and reading circuit; Outside source is by signal code current input signal coil, produce the magnetic field relevant to the size of signal code and dimension linear, wherein signal code coil is arranged at directly over geometry Giant Magneto Resistance devices, produces the magnetic field perpendicular to geometry Giant Magneto Resistance devices surface; Constant-current source provides constant current for geometry Giant Magneto Resistance devices, makes geometry Giant Magneto Resistance devices work in optimum state, and according to the difference of magnetic field size and Orientation, the input of reading circuit obtains the voltage signal of marked change, exports after amplifying shaping.
Furtherly, described geometry Giant Magneto Resistance devices is silica-based geometry Giant Magneto Resistance devices, and its magnetic susceptibility direction is perpendicular to device surface direction.
Furtherly, described geometry Giant Magneto Resistance devices is silica-based geometry Giant Magneto Resistance devices, is provided with electrode, and electrode number is two or more.
Furtherly, described signal code coil, geometry Giant Magneto Resistance devices, signal processing integrated circuit are all prepared from by CMOS integrated circuit technology, and are integrated on same substrate and form monomer chip.
The beneficial effects of the utility model:
Compared with the iCoupler coupled device technologies of ADI company of the U.S., do not need extra signal modulation circuit, structure is simple, and back end signal reading circuit and front end input signal do not exist mutual inductance affects.
Compared with the IsoLoop coupled device technologies of NVE company of the U.S., completely compatible with existing conventional cmos integrated circuit preparation technology, do not need extra equipment and process step.
Accompanying drawing explanation
The structural representation of the silica-based magnetoelectricity signal coupling device of Fig. 1;
The technique sectional view of the silica-based magnetoelectricity signal coupling device of Fig. 2.
Embodiment
Below in conjunction with accompanying drawing, the utility model is described in further detail.
The structural representation of silica-based magnetoelectricity signal coupling device described in the utility model as depicted in figs. 1 and 2.This device comprises signal code coil 101, geometry Giant Magneto Resistance devices 102, signal processing integrated circuit 103 3 parts.Wherein, signal processing integrated circuit comprises constant-current source 104 and reading circuit 105 two electronic circuits.Signal code coil is arranged at directly over geometry Giant Magneto Resistance devices, produces the magnetic field perpendicular to geometry Giant Magneto Resistance devices surface.Constant-current source provides constant current for geometry Giant Magneto Resistance devices, makes geometry Giant Magneto Resistance devices work in optimum state.
Outside source 106, by signal code current input signal coil, produces the magnetic field relevant to the size of signal code and dimension linear.
According to the difference of magnetic field size and Orientation, the input of reading circuit can obtain the voltage signal of marked change, exports after amplifying shaping.
By above process, the output signal of this device and outside source realize electrical isolation state under Signal transmissions.
Claims (4)
1. novel silicon base magnetoelectricity signal coupling device, is characterized in that: comprise signal code coil, geometry Giant Magneto Resistance devices, signal processing integrated circuit, described signal processing integrated circuit comprises constant-current source and reading circuit;
Outside source is by signal code current input signal coil, produce the magnetic field relevant to the size of signal code and dimension linear, wherein signal code coil is arranged at directly over geometry Giant Magneto Resistance devices, produces the magnetic field perpendicular to geometry Giant Magneto Resistance devices surface; Constant-current source provides constant current for geometry Giant Magneto Resistance devices, makes geometry Giant Magneto Resistance devices work in optimum state, and according to the difference of magnetic field size and Orientation, the input of reading circuit obtains the voltage signal of marked change, exports after amplifying shaping.
2. a kind of novel silicon base magnetoelectricity signal coupling device according to claim 1, is characterized in that: described geometry Giant Magneto Resistance devices is silica-based geometry Giant Magneto Resistance devices, and its magnetic susceptibility direction is perpendicular to device surface direction.
3. a kind of novel silicon base magnetoelectricity signal coupling device according to claim 1, it is characterized in that: described geometry Giant Magneto Resistance devices is silica-based geometry Giant Magneto Resistance devices, is provided with electrode, electrode number is two or more.
4. a kind of novel silicon base magnetoelectricity signal coupling device according to claim 1, it is characterized in that: described signal code coil, geometry Giant Magneto Resistance devices, signal processing integrated circuit are all prepared from by CMOS integrated circuit technology, and be integrated on same substrate and form monomer chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420568480.7U CN204089770U (en) | 2014-09-29 | 2014-09-29 | Novel silicon base magnetoelectricity signal coupling device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420568480.7U CN204089770U (en) | 2014-09-29 | 2014-09-29 | Novel silicon base magnetoelectricity signal coupling device |
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| Publication Number | Publication Date |
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| CN204089770U true CN204089770U (en) | 2015-01-07 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201420568480.7U Active CN204089770U (en) | 2014-09-29 | 2014-09-29 | Novel silicon base magnetoelectricity signal coupling device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104300964A (en) * | 2014-09-29 | 2015-01-21 | 杭州电子科技大学 | Novel silica-based magneto-electricity signal coupling device |
-
2014
- 2014-09-29 CN CN201420568480.7U patent/CN204089770U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104300964A (en) * | 2014-09-29 | 2015-01-21 | 杭州电子科技大学 | Novel silica-based magneto-electricity signal coupling device |
| CN104300964B (en) * | 2014-09-29 | 2018-01-30 | 杭州电子科技大学 | A kind of novel silicon base magnetoelectricity signal coupled apparatus |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20170308 Address after: 314400 Haining high tech Industrial Park, Zhejiang Province, No. three weft Road, room 11, No. 408 Patentee after: Haining Jiachen Automobile Electronic Technology Co. Ltd. Address before: Hangzhou City, Zhejiang province 310018 Xiasha Higher Education Park No. 2 street Patentee before: Hangzhou Electronic Science and Technology Univ |
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| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: 430000 South Zone 1, floor 1, auxiliary workshop, plot 2mA, Wuhan Economic and Technological Development Zone, Wuhan City, Hubei Province Patentee after: Wuhan Jiachen Electronic Technology Co.,Ltd. Address before: 314400 Room 408, No. 11, Weisan Road, Haining high tech Industrial Park, Jiaxing City, Zhejiang Province Patentee before: HAINING JIACHEN AUTOMOBILE ELECTRONIC TECHNOLOGY Co.,Ltd. |