CN104300964B - A kind of novel silicon base magnetoelectricity signal coupled apparatus - Google Patents
A kind of novel silicon base magnetoelectricity signal coupled apparatus Download PDFInfo
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- CN104300964B CN104300964B CN201410514942.1A CN201410514942A CN104300964B CN 104300964 B CN104300964 B CN 104300964B CN 201410514942 A CN201410514942 A CN 201410514942A CN 104300964 B CN104300964 B CN 104300964B
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Abstract
The present invention relates to a kind of novel silicon base magnetoelectricity signal coupled apparatus.The present invention includes signal code coil, geometry Giant Magneto Resistance devices, signal processing integrated circuit, and the signal processing integrated circuit includes constant-current source and reading circuit；Signal code current input signal coil, wherein the generation magnetic field related to the size and dimension linear of signal code, signal code coil are arranged at directly over geometry Giant Magneto Resistance devices, produced perpendicular to the magnetic field on geometry Giant Magneto Resistance devices surface by outside source；Constant-current source provides constant current for geometry Giant Magneto Resistance devices, geometry Giant Magneto Resistance devices is worked in optimum state, and according to the difference of magnetic field size and Orientation, the input of reading circuit obtains the voltage signal of significant changes, by being exported after amplifying shaping.The present invention does not need extra signal modulation circuit, simple in construction, and back end signal reading circuit influences with front end input signal in the absence of mutual inductance.
Description
Technical field
The invention belongs to signal coupling device technical field, is related to a kind of novel silicon base magnetoelectricity signal coupled apparatus.
Background technology
Signal coupling device be one kind be widely used in computer network, data-interface, electric and electronic, industrial automation,
The basic module in the fields such as medical electronics.The basic function of signal coupling device is to realize that data pass in the state of electrical isolation
It is defeated, so as to reduce earth loop noise, common-mode voltage effect and the damage to accessory circuit and interface device thereby resulted in.
The photoelectric coupled device being widely used at present, due to its speed is slow, power consumption is big, it is easy to aging, be difficult to the essential defect such as integrated, just by
Step is substituted by magnetoelectricity signal coupled apparatus.ADI companies of the U.S. develop iCoupler coupled device technologies based on mutual inductor
（U.S. Patent Application No.：09/838,520）；NVE companies of the U.S. are based on giant magnetoresistance（GMR）Technological development IsoLoop couplings
Device technology（U.S. Patent Publication No.：US6,300,617）.Wherein, the iCoupler coupled device technologies of ADI companies need elder generation
A high-frequency signal is provided in signal input part primary signal is modulated to form pulsed magnetic field, then connect by read coil
The magnetic field signal received is demodulated into primary signal again.Circuit structure needed for this course of work is extremely complex, and due to line
Mutual inductance effect between circle, can not separate influence of the rear end reading circuit to input end signal completely.NVE companies of the U.S.
IsoLoop coupled device technologies are by the use of GMR device as signal receiving unit, the defects of can overcoming coil mutual inductance technology.But
Because the preparation of GMR device needs to utilize unconventional technique, for the company for manufacturing conventional cmos integrated circuit, without volume
Outer equipment is supported to complete.
Geometry Giant Magneto Resistance devices are a kind of new Giant Magneto Resistance devices（Patent publication No.：102185100A）.Its huge magnetic
Electricresistance effect is relevant with the physical dimension of device, and it is completely compatible with conventional cmos integrated circuit preparation technology.
The content of the invention
The present invention in view of the shortcomings of the prior art, with reference to geometry Giant Magneto Resistance devices technology, there is provided it is a kind of with it is existing logical
With the completely compatible novel silicon base magnetoelectricity signal coupled apparatus of integrated circuit preparation technology.
The technical solution adopted for solving the technical problem of the present invention is：
The present invention includes signal code coil, geometry Giant Magneto Resistance devices, signal processing integrated circuit, the signal transacting
Integrated circuit includes constant-current source and reading circuit；Outside source produces signal code current input signal coil and signal
The related magnetic field of the size and dimension linear of electric current, wherein signal code coil are arranged at directly over geometry Giant Magneto Resistance devices,
Produce perpendicular to the magnetic field on geometry Giant Magneto Resistance devices surface；Constant-current source provides constant current for geometry Giant Magneto Resistance devices, makes
Geometry Giant Magneto Resistance devices work in optimum state, and according to the difference of magnetic field size and Orientation, the input of reading circuit obtains
The voltage signal of significant changes, by being exported after amplifying shaping.
Furtherly, the geometry Giant Magneto Resistance devices are silicon substrate geometry Giant Magneto Resistance devices, and its magnetic susceptibility direction is vertical
Directly in device surface direction.
Furtherly, the geometry Giant Magneto Resistance devices are silicon substrate geometry Giant Magneto Resistance devices, are provided with electrode, electricity
Number of poles mesh is two or more.
Furtherly, the signal code coil, geometry Giant Magneto Resistance devices, signal processing integrated circuit pass through CMOS
Integrated circuit technology is prepared, and is integrated in formation monomer chip on same substrate.
Beneficial effects of the present invention：
Compared with the iCoupler coupled device technologies of ADI companies of the U.S., it is not necessary to extra signal modulation circuit, structure
Simply, and back end signal reading circuit influences with front end input signal in the absence of mutual inductance.
Compared with the IsoLoop coupled device technologies of NVE companies of the U.S., with existing conventional cmos integrated circuit preparation technology
It is completely compatible, it is not necessary to extra equipment and processing step.
Brief description of the drawings
The structural representation of Fig. 1 silicon substrate magnetoelectricity signal coupled apparatuses；
The technique sectional view of Fig. 2 silicon substrate magnetoelectricity signal coupled apparatuses.
Embodiment
Below in conjunction with accompanying drawing, the invention will be further described.
The structural representation of silicon substrate magnetoelectricity signal coupled apparatus of the present invention is as depicted in figs. 1 and 2.The device includes
103 3 signal code coil 101, geometry Giant Magneto Resistance devices 102, signal processing integrated circuit parts.Wherein, signal transacting
Integrated circuit includes 105 two sub-circuits of constant-current source 104 and reading circuit.Signal code coil is arranged at geometry Giant Magneto Resistor
Directly over part, produce perpendicular to the magnetic field on geometry Giant Magneto Resistance devices surface.Constant-current source provides perseverance for geometry Giant Magneto Resistance devices
Determine electric current, geometry Giant Magneto Resistance devices is worked in optimum state.
Signal code current input signal coil is produced size and direction line with signal code by outside source 106
Property related magnetic field.
According to the difference of magnetic field size and Orientation, the input of reading circuit can obtain the voltage signal of significant changes, lead to
Exported after crossing amplification shaping.
By above procedure, the output signal of the device and outside source realize electrical isolation state under signal pass
It is defeated.
Claims (1)
- A kind of 1. novel silicon base magnetoelectricity signal coupled apparatus, it is characterised in that：Include signal code coil, geometry Giant Magneto Resistor Part, signal processing integrated circuit, the signal code coil, geometry Giant Magneto Resistance devices, signal processing integrated circuit pass through CMOS integrated circuit technologies are prepared, and are integrated in formation monomer chip on same substrate；The signal processing integrated circuit Include constant-current source and reading circuit；Outside source is related to the size and dimension linear of signal code by signal code current input signal coil, generation Magnetic field, wherein signal code coil are arranged at directly over geometry Giant Magneto Resistance devices, are produced perpendicular to geometry Giant Magneto Resistance devices The magnetic field on surface；Constant-current source provides constant current for geometry Giant Magneto Resistance devices, geometry Giant Magneto Resistance devices is worked in most preferably State, according to the difference of magnetic field size and Orientation, the input of reading circuit obtains the voltage signal of significant changes, passes through amplification Exported after shaping；The geometry Giant Magneto Resistance devices are silicon substrate geometry Giant Magneto Resistance devices, and its magnetic susceptibility direction is perpendicular to device surface side To being provided with electrode in geometry Giant Magneto Resistance devices, electrode number is multiple.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201410514942.1A CN104300964B (en) | 2014-09-29 | 2014-09-29 | A kind of novel silicon base magnetoelectricity signal coupled apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410514942.1A CN104300964B (en) | 2014-09-29 | 2014-09-29 | A kind of novel silicon base magnetoelectricity signal coupled apparatus |
Publications (2)
| Publication Number | Publication Date |
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| CN104300964A CN104300964A (en) | 2015-01-21 |
| CN104300964B true CN104300964B (en) | 2018-01-30 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2446450A (en) * | 2007-02-07 | 2008-08-13 | John Davidson Hunter | Balanced line signal linear amplitude modulator using a magnetic resistance bridge sensor |
| CN101728377A (en) * | 2009-12-09 | 2010-06-09 | 钱正洪 | High speed magnetic electricity isolating signal coupling device compatible with photoelectric coupler |
| CN102148326A (en) * | 2010-12-31 | 2011-08-10 | 钱正洪 | Integrated magnetic electronic signal isolation coupling device and preparation process of integrated magnetic electronic signal isolation coupling device |
| CN102185100A (en) * | 2011-04-14 | 2011-09-14 | 清华大学 | Silicon-based geometrical giant magnetoresistance device and manufacturing method thereof |
| CN204089770U (en) * | 2014-09-29 | 2015-01-07 | 杭州电子科技大学 | Novel silicon base magnetoelectricity signal coupling device |
-
2014
- 2014-09-29 CN CN201410514942.1A patent/CN104300964B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2446450A (en) * | 2007-02-07 | 2008-08-13 | John Davidson Hunter | Balanced line signal linear amplitude modulator using a magnetic resistance bridge sensor |
| CN101728377A (en) * | 2009-12-09 | 2010-06-09 | 钱正洪 | High speed magnetic electricity isolating signal coupling device compatible with photoelectric coupler |
| CN102148326A (en) * | 2010-12-31 | 2011-08-10 | 钱正洪 | Integrated magnetic electronic signal isolation coupling device and preparation process of integrated magnetic electronic signal isolation coupling device |
| CN102185100A (en) * | 2011-04-14 | 2011-09-14 | 清华大学 | Silicon-based geometrical giant magnetoresistance device and manufacturing method thereof |
| CN204089770U (en) * | 2014-09-29 | 2015-01-07 | 杭州电子科技大学 | Novel silicon base magnetoelectricity signal coupling device |
Non-Patent Citations (1)
| Title |
|---|
| Novel Galvanic Isolation Based on Spin Valve GMR Magnetic Field Sensors;Robert Fayfield et.;《Proceedings of the Thirteenth Biennial，University/Government/Industry Microelectronics Symposium，1999》;19991231;165-168 * |
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| CN104300964A (en) | 2015-01-21 |
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