CN102148326A - Integrated magnetic electronic signal isolation coupling device and preparation process of integrated magnetic electronic signal isolation coupling device - Google Patents
Integrated magnetic electronic signal isolation coupling device and preparation process of integrated magnetic electronic signal isolation coupling device Download PDFInfo
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Abstract
The invention relates to an integrated magnetic electronic signal isolation coupling device and a preparation process of the integrated magnetic electronic signal isolation coupling device. The coupling device sequentially comprises a signal processing circuit, a first insulated dielectric layer, a magnetic sensitive bridge, an insulated isolating layer, a signal input coil and a soft magnetic shielding layer from bottom to top, wherein the magnetic sensitive bridge and the signal processing circuit are electrically completely isolated from the signal input coil. The preparation process comprises the steps of preparing the magnetic sensitive bridge; preparing the insulated isolating layer and an opening; depositing a metal layer and etching to form a connecting line; taking photoresist as a template to form a copper column through a plating process; preparing the signal input coil; and adding the soft magnetic shielding layer on the signal input coil and depositing the insulated isolating layer. The coupling device has the remarkable and substantial characteristics that the coupling device is provided with the signal input coil with a double-layer structure, and an input signal current welding plate is arranged outside the coil, therefore, the overall layout of a chip is convenient, the size of the chip is reduced, and the unit current can generate strong magnetic signals when passing through the double-layer coil.
Description
Affiliated technical field
The present invention relates to a kind of integrated magnetoelectricity subsignal isolation coupling device and preparation technology thereof.
Background technology
The isolation signals coupled apparatus is widely used in a plurality of fields such as computer network interface, transfer of data, communication, transducer/measuring instrument, mobile electron, medical electronics.The basic role of isolation signals coupled apparatus is exactly to carry out the data-signal communication under the state of electrical isolation.The isolation signals coupled apparatus can reduce or eliminate the damage of ground return noise and common-mode voltage effect and docking port that causes therefrom and accessory circuit.Using now is photosignal isolation coupling device (hereinafter to be referred as photoelectrical coupler) more widely, and its operating principle is based on optical signal transmitting and detection.Photoelectrical coupler is made up of optical signal transmitter and detector enclosed package that the optically transparent insulating barrier of one deck separates together.There is following essential disadvantages in photoelectrical coupler: volume is big, speed is slow (＜10 MHz), not easy of integration, not radiation proof and aging easily.Therefore, the more and more requirement of incompatibility Modern High-Speed electronic system of photoelectrical coupler.
Photoelectrical coupler transmits signal according to light as carrier.But signal also can wait by other carrier such as magnetic field or electric field and transmit.In recent years, giant magnetoresistance (GMR) the magnetoelectric coupling device technology succeeded in developing of U.S. ADI company iCoupler coupled apparatus technology and the U.S. NVE company based on the coil mutual inductance principle that release is all carried out signal transmission by magnetic field as carrier.
The iCoupler coupled apparatus technology of ADI company is the digital signal isolation coupling device of a kind of coil-coil insulation isolation configuration.The drive circuit of a special use of its needs is converted into the Modulation Pulse Current signal with input voltage and produces modulated pulse magnetic.Then by obtaining field signal that coil receives and signal being demodulated into primary signal.
The division center of the giant magnetoresistance of NVE company (GMR) magnetoelectric coupling device is coil-GMR transducer receiving element that the plane insulation is isolated.Sort signal isolation coupling device needs a current driving circuit so that signal code produces signal magnetic field by coil, is reconstructed and reads by GMR sensor unit detection received signal magnetic field and by reading circuit then.But there are three major defects in this giant magnetoresistance (GMR) magnetoelectric coupling device: first is exactly that device can not be fully and the photoelectrical coupler compatibility, and special driver of needs be converted to current signal with voltage signal; The secondth, behind unexpected power supply power-fail, the state of output signal is uncertain after restarting.The 3rd is that the magnetization reversal of free layer has related to magnetic domain wall movement, and this not only can produce barkhausen noise, but also can limit reversal rate.
Summary of the invention
The object of the present invention is to provide a kind of integrated magnetoelectricity subsignal isolation coupling device and preparation technology thereof, the magnetosensitive electric bridge on this magnetoelectric coupling device comprises linear giant magnetoresistance, i.e. GMR magnetosensitive unit, perhaps MTJ, i.e. MTJ magnetosensitive unit; Simultaneously, signal input line circle on this magnetoelectric coupling device is a double-decker, the current input signal welded disc is arranged in outside the coil, thereby helps that chip is whole sets type and dwindle chip size, unitary current can produce stronger field signal during by double-layer coil; Between the double-deck in addition input coil, between coil and the magnetosensitive electric bridge, be respectively equipped with corresponding insulating medium layer, dielectric isolation layer between magnetosensitive electric bridge and the output signal processing circuit, and the soft magnetism screen that is provided with of the skin of signal input line circle, the interference of effectively isolated external magnetic field signal realizes that volume is little, compatible good, transmission speed is fast, has the purpose of radiation proof etc.
The present invention solves the technical scheme that the prior art problem adopted: integrated magnetoelectricity subsignal isolation coupling device, the magnetosensitive electric bridge that it is characterized in that comprising the signal input line circle, isolates with the signal input line circle, the signal processing circuit that is connected with the magnetosensitive electric bridge, above-mentioned three is integrated on the same tube core, be followed successively by from bottom to top: signal processing circuit, first insulating medium layer, magnetosensitive electric bridge, dielectric isolation layer, signal input line circle, soft magnetism screen, described magnetosensitive electric bridge and signal processing circuit are all isolated on electric fully with the signal input line circle.Earlier convert current signal to field signal by the signal input line circle, surveyed and convert to the signal of telecommunication by this field signal by the magnetosensitive bridge structure then, again by output signal processing circuit reconstruct output.The power supply that signal input line circle in the magnetoelectric coupling device adopts is different with the power supply that magnetosensitive electric bridge, output signal processing circuit adopt.The effect of screen is in order to prevent the interference of external magnetic field to signal, also can to improve the efficient of the exciting field of coil simultaneously, reducing the energy consumption of device on the one hand.
As the further of technique scheme improved and replenish, the present invention adopts following technical measures: described magnetosensitive electric bridge comprises linear giant magnetoresistance, i.e. GMR magnetosensitive unit, perhaps MTJ, i.e. MTJ magnetosensitive unit.
Described signal input line circle is connected to form by the double layer of metal planar coil, makes the current input signal welded disc on the signal input line circle be arranged in coil periphery; Power end on magnetosensitive electric bridge, the signal processing circuit and signal output part all with between the welded disc are connected by the copper post respectively.The signal input line circle is made up of the double layer of metal planar coil that is in series.Such loop construction can make current input signal welded disc (Pad) be arranged in outside the coil, thereby helps the whole composing of chip and dwindle chip size.Than single layer coil, unitary current can produce stronger field signal during by double-layer coil.Such loop construction has the following advantages: 1) can increase the signal magnetic field intensity that current input signal produced by coil; 2) can reduce the size of coil; 3) the current input signal welded disc can be arranged at outside the coil, helps the whole composing of chip and dwindles chip size.
Described magnetosensitive electric bridge comprises linear giant magnetoresistance, i.e. GMR magnetosensitive unit, perhaps MTJ, i.e. MTJ magnetosensitive unit.
Described signal input line circle is connected to form by the double layer of metal planar coil, makes the current input signal welded disc on the signal input line circle be arranged in coil periphery.
Isolated insulation layer between described signal input line circle and the magnetosensitive bridge structure adopts insulating polymer, perhaps adopts inorganic insulating material.
The thickness of described isolated insulation layer is between 5 microns to 30 microns; Described insulating polymer is selected BCB or polyimides for use; Described inorganic insulating material is selected Al for use
2O
3, or Si
3N
4, or SiO
2The thickness of dielectric isolation layer can be decided according to the size of isolation voltage.Preparation has the silicon chip of output signal processing circuit to adopt the common process preparation to obtain usually, and circuit power on it and relevant line thereof all come out, conveniently are connected with the magnetosensitive electric bridge.
Power end on described magnetosensitive electric bridge, the signal processing circuit and signal output part all with between the welded disc are connected by metal column respectively, and described metal column is the Cu post, perhaps be Au post or for the Ag post or be the Ni post or be the Al post.
The manufacturing process of integrated magnetoelectricity subsignal isolation coupling device, its manufacturing step comprises: have in preparation and make the magnetosensitive electric bridge on the silicon chip of output signal processing circuit; On the magnetosensitive electric bridge, make dielectric isolation layer, and opening, then, depositing metal layers carries out etching to metal level and forms connecting line; Make the copper post, then, make the signal input line circle again, on the signal input line circle, add system one deck soft magnetism screen at last again, it is characterized in that the copper post is is that template forms by electroplating technology with the photoresist: even glue, exposure imaging form electroplates template, the electro-coppering post is electroplated the back development and is removed photoresist then, precipitates isolated insulation layer again.
When isolated insulation layer adopted inorganic insulating material, the deposition inorganic insulating material needed method polishing by chemico-mechanical polishing make its surfacing and the Cu post is come out, so that be connected with signal processing circuit; When isolated insulation layer adopts insulating polymer, spin coating insulating polymer, direct then manufacture craft of carrying out signal processing circuit thereon.
Described signal input line circle is the double-level-metal coil, it is realized by twice metal deposition etching technics: form the ground floor coil after plated metal on the separator and etching, spin coating second insulating medium layer that insulate then, after being connected the connecting hole of ground floor wire coil and output line by photoetching and etching formation again, and then plated metal and etching formation second layer coil.
Add system one deck soft magnetism screen above the described signal input line circle.The operation of deposition soft magnetism screen comprises: deposit one deck plating seed layer earlier, again by behind spin coating one deck photoresist and the exposure imaging as the template electrodeposited coating, after plating is finished, develop and by the method for ion etching the plating seed layer etching is removed after obtain screen.
The outstanding substantive distinguishing features that the present invention has: this magnetoelectric coupling device is provided with double-deck signal input line circle, the current input signal welded disc is arranged in outside the coil, thereby help that chip is whole sets type and dwindle chip size, unitary current can produce stronger field signal during by double-layer coil; Between the double-deck input coil, between coil and the magnetosensitive electric bridge, be respectively equipped with corresponding insulating medium layer or dielectric isolation layer between magnetosensitive electric bridge and the output signal processing circuit, and the screen that is provided with of the skin of signal input line circle, the effectively interference of isolated signal realizes that volume is little, compatible good, transmission speed is fast, has the purpose of radiation proof etc.; In addition, step of preparation process is reasonable, easily suitability for industrialized production.
Description of drawings
Fig. 1 is a kind of sectional structure schematic diagram among the present invention;
Fig. 2 is the flow chart of preparation technology among the present invention.
Embodiment
The present invention is further illustrated below in conjunction with the drawings and specific embodiments.
Embodiment:Integrated magnetoelectricity subsignal isolation coupling device, as shown in Figure 1, it comprises signal input line circle 6, the magnetosensitive electric bridge 3 that is connected with signal input line circle 6 signals, the signal processing circuit 2 that is connected with magnetosensitive electric bridge 3 signals.Above-mentioned three is integrated on the same tube core, be followed successively by from bottom to top: signal processing circuit 2, first insulating medium layer 4, magnetosensitive electric bridge 3, dielectric isolation layer 5, signal input line circle 6, soft magnetism screen 7, magnetosensitive electric bridge 3 and signal processing circuit 2 are all isolated on electric fully with the signal input line circle.Magnetosensitive electric bridge 3 comprises linear giant magnetoresistance, i.e. GMR magnetosensitive unit, perhaps MTJ, i.e. MTJ magnetosensitive unit.Power end on magnetosensitive electric bridge 3, the signal processing circuit 2 and signal output part respectively all with welded disc between by Cu post 8(or Au post or Ag post or Ni post or Al post) be connected.In order to save space, reach succinct purpose, in embodiment, be that example is done specific description only with the Cu post.
As shown in Figure 2, the preparation technology of integrated magnetoelectricity subsignal isolation coupling device, its manufacturing step comprises: have in preparation and make magnetosensitive electric bridge 3 on the silicon chip 1 of output signal processing circuit 2; On magnetosensitive electric bridge 3, make dielectric isolation layer, and opening, then, depositing metal layers carries out etching to metal level and forms connecting line 14; Make the copper post, then, make the signal input line circle again, add system one deck soft magnetism screen above the signal input line circle.
The preparation technology who makes magnetosensitive electric bridge 3 comprises: have in preparation on the silicon chip 1 of signal processing circuit 2 and make the magnetosensitive film, promptly linear giant magnetoresistance (GMR magnetosensitive unit) film, perhaps MTJ (MTJ magnetosensitive unit) film.The magnetosensitive film is carried out etching: the method for the method of direct etching or the ion etching of employing die.If adopt the die ion etching process, need deposition one deck isolated insulation layer on the magnetosensitive film, then by the reactive ion beam etching (RIBE) method, with isolated insulation layer ion etching, form the template of giant magnetoresistance or magnetic tunnel-junction resistor stripe, by the method for ion etching, giant magnetoresistance or magnetic tunnel-junction are etched into required figure then.
Copper post 8 is to be that template forms by electroplating technology with the photoresist: even glue, exposure imaging form electroplates template, electro-coppering post then, after the electro-coppering post reaches required thickness, the photoresist template is removed photoresist by the technology of removing photoresist, by ion etching process the plating seed layer etching is removed again and just obtained the copper post; Precipitate isolated insulation layer 5 again.
Signal input line circle 6 is the double-level-metal coil, and the current input signal welded disc 13 on the signal input line circle is arranged in coil periphery.Every layer signal input coil can be made up of one or multi-channel coil, is the racetrack structure, and two-layer coil is overlapping up and down, and two-layer coil is separated by second insulating medium layer 9.Between first coil layer and the magnetosensitive electric bridge dielectric isolation layer 5 is set, and is connected with magnetosensitive electric bridge 3 by Cu post 8.
Double-level-metal coil 6 is realized by twice metal deposition etching technics: form the ground floor coil after plated metal on the separator and etching, spin coating second insulating medium layer 9 then, after being connected the connecting hole of ground floor wire coil and output line by photoetching and etching formation again, and then plated metal and etching formation second layer coil.
Be provided with the 3rd insulating medium layer 10 above second coil layer.Also be provided with soft magnetism screen 7 on the 3rd insulating medium layer 10, as the NiFe screen.On screen 7, deposit the 4th insulating medium layer 11 again, and form welded disc 12 by etching.Coil adopts Al, Cu, metal materials such as Au.Coil is used for the signal input of isolation coupling and the generation in signal magnetic field.Deposition soft magnetism screen 7(such as NiFe screen) operation comprise: deposition one deck plating seed layer earlier, again by behind spin coating one deck photoresist and the exposure imaging as the template electrodeposited coating, after plating is finished, develop and by the method for ion etching the plating seed layer etching is removed after obtain screen.
According to the size of isolation voltage, the thickness of isolated insulation layer is between 5 microns to 30 microns.The material of insulating medium layer and dielectric isolation layer is selected the isolated material of high dielectric strength, low-k usually for use.As, insulating polymer is selected BCB or polyimides for use; Inorganic insulating material is selected Al for use
2O
3, or Si
3N
4, or SiO
2As shown in table 1:
The dielectric property of table 1 different insulative material
| Material type | Dielectric strength (Volts/um) | Dielectric constant representative value (@1MHz) |
| Al 2O 3 | 670 | 9.9 |
| Si 3N 4 | 300-850 | 7.1 |
| SiO 2 | 700-800 | 3.9 |
| BCB | 530 | 2.65 |
| PI | 500 | 2.5 |
Claims (10)
1. integrated magnetoelectricity subsignal isolation coupling device, it is characterized in that comprising signal input line circle (6), magnetosensitive electric bridge (3) with signal input line circle (6) isolation, the signal processing circuit (2) that is connected with magnetosensitive electric bridge (3) signal, above-mentioned three is integrated on the same tube core, be followed successively by from bottom to top: signal processing circuit (2), first insulating medium layer (4), magnetosensitive electric bridge (3), dielectric isolation layer (5), signal input line circle (6), soft magnetism screen (7), described magnetosensitive electric bridge (3) and signal processing circuit (2) are all isolated on electric fully with signal input line circle (6).
2. integrated magnetoelectricity subsignal isolation coupling device according to claim 1 is characterized in that described magnetosensitive electric bridge (3) comprises linear giant magnetoresistance, i.e. GMR magnetosensitive unit, perhaps MTJ, i.e. MTJ magnetosensitive unit.
3. integrated magnetoelectricity subsignal isolation coupling device according to claim 1, it is characterized in that described signal input line circle (6) is connected to form by the double layer of metal planar coil, make the current input signal welded disc (13) on the signal input line circle be arranged in coil periphery.
4. integrated magnetoelectricity subsignal isolation coupling device according to claim 1 is characterized in that the isolated insulation layer (5) between described signal input line circle (6) and magnetosensitive electric bridge (3) structure adopts insulating polymer, perhaps adopts inorganic insulating material.
5. integrated magnetoelectricity subsignal isolation coupling device according to claim 4, the thickness that it is characterized in that described isolated insulation layer (5) is between 5 microns to 30 microns; Described insulating polymer is selected BCB or polyimides for use; Described inorganic insulating material is selected Al for use
2O
3, or Si
3N
4, or SiO
2
6. integrated magnetoelectricity subsignal isolation coupling device according to claim 1, it is characterized in that power end and signal output part on described magnetosensitive electric bridge (3), the signal processing circuit (2) all with between the welded disc (13) are connected by metal column (8) respectively, described metal column (8) is the Cu post, perhaps is Au post or for the Ag post or for the Ni post or for the Al post.
7. the manufacturing process of integrated magnetoelectricity subsignal isolation coupling device according to claim 1, its manufacturing step comprises: have in preparation and make magnetosensitive electric bridge (3) on the silicon chip of output signal processing circuit; Go up making dielectric isolation layer (5) at magnetosensitive electric bridge (3), and opening, then, depositing metal layers carries out etching to metal level and forms connecting line (14); Make copper post (8), then, make signal input line circle (6) again, on signal input line circle (6), add system one deck soft magnetism screen (7) at last again, it is characterized in that copper post (8) is is that template forms by electroplating technology with the photoresist: even glue, exposure imaging form electroplates template, the electro-coppering post is electroplated the back development and is removed photoresist then, precipitates isolated insulation layer again.
8. the manufacturing process of integrated magnetoelectricity subsignal isolation coupling device according to claim 7, it is characterized in that when isolated insulation layer (5) adopts inorganic insulating material, the deposition inorganic insulating material, need method polishing by chemico-mechanical polishing make its surfacing and copper post (8) is come out, so that be connected with signal processing circuit (6); When isolated insulation layer (5) adopted insulating polymer, the spin coating insulating polymer directly carried out the manufacture craft of signal processing circuit (6) then thereon.
9. the manufacturing process of integrated magnetoelectricity subsignal isolation coupling device according to claim 8, it is characterized in that described signal input line circle (6) is the double-level-metal coil, it is realized by twice metal deposition etching technics: form the ground floor coil after plated metal on the separator and etching, spin coating second dielectric layer (9) that insulate then, after being connected the connecting hole of ground floor wire coil and output line by photoetching and etching formation again, and then plated metal and etching formation second layer coil.
10. the manufacturing process of integrated magnetoelectricity subsignal isolation coupling device according to claim 1 is characterized in that adding above the described signal input line circle (6) system one deck soft magnetism screen (7).
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|---|---|---|---|---|
| CN104300964A (en) * | 2014-09-29 | 2015-01-21 | 杭州电子科技大学 | Novel silica-based magneto-electricity signal coupling device |
Citations (2)
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| CN101728377A (en) * | 2009-12-09 | 2010-06-09 | 钱正洪 | High speed magnetic electricity isolating signal coupling device compatible with photoelectric coupler |
| US20100270865A1 (en) * | 2009-04-28 | 2010-10-28 | Alps Electric Co., Ltd. | Magnetic coupling type isolator |
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2010
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100270865A1 (en) * | 2009-04-28 | 2010-10-28 | Alps Electric Co., Ltd. | Magnetic coupling type isolator |
| CN101728377A (en) * | 2009-12-09 | 2010-06-09 | 钱正洪 | High speed magnetic electricity isolating signal coupling device compatible with photoelectric coupler |
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| Title |
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| ZHENGHONG QIAN,ETC: "Magnetoresistive signal isolators employing linear spin-valve sensing resistors", 《JOURNAL OF APPLIED PHYSICS》, 15 May 2003 (2003-05-15) * |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104300964A (en) * | 2014-09-29 | 2015-01-21 | 杭州电子科技大学 | Novel silica-based magneto-electricity signal coupling device |
| CN104300964B (en) * | 2014-09-29 | 2018-01-30 | 杭州电子科技大学 | A kind of novel silicon base magnetoelectricity signal coupled apparatus |
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Effective date of registration: 20170308 Address after: Room 11, No. three, No., No. 408, Haining hi tech Industrial Park, Zhejiang, China Patentee after: HAINING JIACHEN AUTOMOBILE ELECTRONIC TECHNOLOGY Co.,Ltd. Address before: Massachusetts Patentee before: Qian Zhenghong |
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Denomination of invention: Integrated magneto electronic signal isolation coupling device and its fabrication process Effective date of registration: 20210629 Granted publication date: 20130731 Pledgee: Industrial Bank Limited by Share Ltd. Wuhan branch Pledgor: HAINING JIACHEN AUTOMOBILE ELECTRONIC TECHNOLOGY Co.,Ltd. Registration number: Y2021420000055 |
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Address after: 430000 South Zone 1, floor 1, auxiliary workshop, plot 2mA, Wuhan Economic and Technological Development Zone, Wuhan City, Hubei Province Patentee after: Wuhan Jiachen Electronic Technology Co.,Ltd. Address before: 314400 Room 408, No. 11, Weisan Road, Haining high tech Industrial Park, Jiaxing City, Zhejiang Province Patentee before: HAINING JIACHEN AUTOMOBILE ELECTRONIC TECHNOLOGY Co.,Ltd. |
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Date of cancellation: 20230804 Granted publication date: 20130731 Pledgee: Industrial Bank Limited by Share Ltd. Wuhan branch Pledgor: HAINING JIACHEN AUTOMOBILE ELECTRONIC TECHNOLOGY Co.,Ltd. Registration number: Y2021420000055 |
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Address after: 430000, No. 138 Fengshu 6th Road, Wuhan Economic and Technological Development Zone, Wuhan City, Hubei Province Patentee after: Wuhan Jiachen Electronic Technology Co.,Ltd. Country or region after: China Address before: 430000 South Zone 1, floor 1, auxiliary workshop, plot 2mA, Wuhan Economic and Technological Development Zone, Wuhan City, Hubei Province Patentee before: Wuhan Jiachen Electronic Technology Co.,Ltd. Country or region before: China |