Adopt the MEMS micro-acceleration gauge closed-loop driving circuit of wave chopping technology
Technical field
The present invention relates to a kind of closed-loop driving circuit, especially a kind of MEMS micro-acceleration gauge closed-loop driving circuit adopting wave chopping technology, belongs to the technical field of MEMS technology and CMOS technology Combined design.
Background technology
MEMS(Micro-Electro-Mechanical Systems) technology is a large hot fields of current IC industry development, the device wherein counting representative with micro-acceleration is applied in many-side, but traditional MEMS technology is still in the face of many technical barriers, wherein with weak output signal, the technology such as skew of and resonance frequency compatible with CMOS technology cannot become the key constraints developed now.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art, a kind of MEMS micro-acceleration gauge closed-loop driving circuit adopting wave chopping technology is provided, its compact conformation, by MEMS micro-acceleration gauge and CMOS sensing circuit Combined design, the signal of MEMS micro-acceleration gauge can be read and amplify, reduce the noise imbalance of sensing circuit, and MEMS micro-acceleration gauge can be driven, safe and reliable.
According to technical scheme provided by the invention, the MEMS microaccelerometer closed-loop driving circuit of described employing wave chopping technology, comprises MEMS micro-acceleration gauge circuit; The output terminal of described MEMS microaccelerometer circuit is connected with CMOS sensing circuit, and described CMOS sensing circuit is connected by the drive end of feedback driving circuit with MEMS micro-acceleration gauge circuit, to provide the driving voltage of MEMS micro-acceleration gauge circuit;
Described CMOS sensing circuit comprises the modulator for receiving MEMS microaccelerometer circuit output signal, the output terminal of described modulator is connected with amplifier, the output terminal of described amplifier is connected with bandpass filter, the output terminal of described bandpass filter is connected with detuner, and the output terminal of described detuner is connected with low-pass filter;
The output signal frequency of MEMS micro-acceleration gauge circuit is modulated to high frequency by modulator, described high-frequency signal is amplified by amplifier, bandpass filter weakens the signal outside signal frequency range to the high-frequency signal after amplification, high-frequency signal after bandpass filter process is modulated back low frequency signal by detuner, low-pass filter carries out noise and imbalance filtering to low frequency signal, feedback driving circuit regulates the driving voltage driving MEMS micro-acceleration gauge circuit automatically according to the output signal of low-pass filter, resonance frequency place is worked in make MEMS micro-acceleration gauge circuit self-adaptation.
Described feedback driving circuit adopts CMOS technology manufacture, and feedback driving circuit comprises automatic gain control unit.
Modulator, amplifier, bandpass filter, detuner and low-pass filter in described CMOS sensing circuit are the fully differential structure that single ended input Single-end output structure or double-width grinding both-end export.
Described automatic gain control unit comprises variable gain operational amplifier and peak detection circuit, the input end of described variable gain operational amplifier and the input end of peak detection circuit are connected with low-pass filter first output terminal of low-pass filter and low-pass filter second output terminal respectively, the output terminal of peak detection circuit is connected with the control end of variable gain operational amplifier, and the output terminal of variable gain operational amplifier is electrically connected with the drive end of MEMS micro-acceleration gauge circuit.
Described modulator and detuner coupling connect, modulator and detuner comprise the first switch, second switch, the 3rd switch and the 4th switch, the first end of the first switch is connected with the first end of the 3rd switch, second end of the first switch is connected with the first end of second switch, second end of second switch is connected with the first end of the 4th switch, and the second end of the 4th switch is connected with the second end of the 3rd switch; Wherein, the first end of the first switch, the second end are the negative terminal of modulator and detuner, and the first end of the 4th switch, the second end are the anode of modulator and detuner; The control end of the first switch and the 4th switch is by the first clock control, and the control end of second switch and the 3rd switch controls by second clock, and described first clock is the inversion clock of second clock.
Described first switch, second switch, the 3rd switch and the 4th switch are NMOS tube or PMOS.Described modulator or detuner adopt the analog multiplier of not belt switch continuous time.Described bandpass filter, low-pass filter are RC wave filter or gm-c wave filter.
In described MEMS microaccelerometer circuit, MEMS micro-acceleration gauge adopts single mass structure or double quality blocks structure.
During described MEMS microaccelerometer employing single mass structure, MEMS micro-acceleration gauge comprises the first mass and mates with described first mass the second anchor point and the 3rd anchor point that are connected, described second anchor point and the 3rd anchor point are the output terminal of MEMS micro-acceleration gauge, and the first mass is the drive end of MEMS micro-acceleration gauge;
During described MEMS microaccelerometer employing double quality blocks structure, MEMS micro-acceleration gauge comprises the first anchor point, the 6th anchor point, the 4th anchor point and the 5th anchor point, the second mass between described first anchor point, the 6th anchor point is connected by connector with the 3rd mass between the 4th anchor point, the 5th anchor point, first anchor point and the 6th anchor point are the drive end of MEMS microaccelerometer, and the 4th anchor point and the 5th anchor point are the output terminal of MEMS micro-acceleration gauge.
Advantage of the present invention: circuit electrical noise and imbalance can be reduced, amplify MEMS sensor signal simultaneously, and providing driving circuit for MEMS micro-acceleration gauge, integrated circuit has adaptive characteristic, does not need external circuits to drive mems accelerometer.
Accompanying drawing explanation
Fig. 1 is structured flowchart of the present invention.
Fig. 2 is the circuit theory diagrams of automatic gain control unit of the present invention.
Fig. 3 is the circuit theory diagrams of modulator of the present invention and detuner.
Fig. 4 is the structural representation that MEMS microaccelerometer of the present invention adopts single mass.
Fig. 5 is the structural representation that MEMS micro-acceleration gauge of the present invention adopts double quality blocks.
Description of reference numerals: 101-MEMS micro-acceleration gauge, 102-modulator, 103-amplifier, 104-bandpass filter, 105-detuner, 106-low-pass filter, 107-automatic gain control unit, 108-low-pass filter first output terminal, 109-low-pass filter second output terminal, 110-drive end, 111-variable gain operational amplifier, 112-peak detection circuit, 113-first switch, 114-second switch, 115-the 3rd switch, 116-the 4th switch, 117-first output terminal, 118-second output terminal, 119-first anchor point, 120-second anchor point, 121-the 3rd anchor point, 122-the 4th anchor point, 123-the 5th anchor point, 124-the 6th anchor point, 125-connector, 126-first mass, 127-first feeds back drive output and 128-second feeds back drive output.
Embodiment
Below in conjunction with concrete drawings and Examples, the invention will be further described.
As shown in Figure 1: in order to MEMS sensor and cmos circuit compatibility can be made, to read the output signal of MEMS sensor, and reduce noise imbalance, the present invention includes MEMS micro-acceleration gauge circuit; The output terminal of described MEMS microaccelerometer circuit is connected with CMOS sensing circuit, and described CMOS sensing circuit is connected by the drive end of feedback driving circuit with MEMS micro-acceleration gauge circuit, to provide the driving voltage of MEMS micro-acceleration gauge circuit;
Described CMOS sensing circuit comprises the modulator 102 for receiving MEMS microaccelerometer circuit output signal, the output terminal of described modulator 102 is connected with amplifier 103, the output terminal of described amplifier 103 is connected with bandpass filter 104, the output terminal of described bandpass filter 104 is connected with detuner 105, and the output terminal of described detuner 105 is connected with low-pass filter 106;
The output signal frequency of MEMS micro-acceleration gauge circuit is modulated to high frequency by modulator 102, described high-frequency signal is amplified by amplifier 103, bandpass filter 104 weakens the signal outside signal frequency range to the high-frequency signal after amplification, high-frequency signal after bandpass filter 104 processes by detuner 105 modulates back low frequency signal, low-pass filter 106 pairs of low frequency signals carry out noise and imbalance filtering, feedback driving circuit regulates the driving voltage driving MEMS micro-acceleration gauge circuit automatically according to the output signal of low-pass filter 106, resonance frequency place is worked in make MEMS micro-acceleration gauge circuit self-adaptation.
Particularly, MEMS micro-acceleration gauge circuit adopts electric bridge mode to produce AC signal, and feedback driving circuit is adopt CMOS technology manufacture equally.The Combined design of MEMS micro-acceleration gauge circuit of the present invention, CMOS sensing circuit and feedback driving circuit comprises single-chip integration mode or system in package mode.
Modulator 102 in described CMOS sensing circuit, amplifier 103, bandpass filter 104, detuner 105 and low-pass filter 106 is the fully differential structure that single ended input Single-end output structure or double-width grinding both-end export.Described bandpass filter 104, low-pass filter 106 are RC wave filter or gm-c wave filter.
As depicted in figs. 1 and 2: feedback driving circuit comprises automatic gain control unit 107, described automatic gain control unit 107 comprises variable gain operational amplifier 111 and peak detection circuit 112, the input end of described variable gain operational amplifier 111 and the input end of peak detection circuit 112 are connected with low-pass filter first output terminal 108 of low-pass filter 106 and low-pass filter second output terminal 109 respectively, the output terminal of peak detection circuit 112 is connected with the control end of variable gain operational amplifier 111, the output terminal of variable gain operational amplifier 111 is electrically connected with the drive end 110 of MEMS micro-acceleration gauge circuit.
As shown in Figure 3: described modulator 102 and detuner 105 mate and connect, modulator 102 and detuner 105 comprise the first switch 113, second switch 114, the 3rd switch 115 and the 4th switch 116, the first end of the first switch 113 is connected with the first end of the 3rd switch 115, second end of the first switch 113 is connected with the first end of second switch 114, second end of second switch 114 is connected with the first end of the 4th switch 116, and the second end of the 4th switch 116 is connected with the second end of the 3rd switch 115; Wherein, the first end of the first switch 113, the second end are the negative terminal of modulator 102 and detuner 105, and the first end of the 4th switch 116, the second end are the anode of modulator 102 and detuner 105; The control end of the first switch 113 and the 4th switch 116 is by the first clock control, and the control end of second switch 114 and the 3rd switch 115 controls by second clock, and described first clock is the inversion clock of second clock.
Wherein, described first switch 113, second switch 114, the 3rd switch 115 and the 4th switch 116 are NMOS tube or PMOS.In addition, described modulator 102 or detuner 105 can also adopt the analog multiplier of not belt switch continuous time.
As shown in Figure 4 and Figure 5: in described MEMS microaccelerometer circuit, MEMS micro-acceleration gauge 101 adopts single mass structure or double quality blocks structure.
As shown in Figure 4: when described MEMS microaccelerometer 101 adopts single mass structure, MEMS micro-acceleration gauge 101 comprises the first mass 126 and mates with described first mass 126 the second anchor point 120 and the 3rd anchor point 121 that are connected, described second anchor point 120 and the 3rd anchor point 121 are the output terminal of MEMS micro-acceleration gauge 101, and the first mass 126 is the drive end of MEMS micro-acceleration gauge 101;
When described MEMS microaccelerometer 101 adopts double quality blocks structure, MEMS micro-acceleration gauge 101 comprises the first anchor point 119, the 6th anchor point 124, the 4th anchor point 122 and the 5th anchor point 123, the second mass between described first anchor point 119, the 6th anchor point 124 is connected by connector 125 with the 3rd mass between the 4th anchor point 122, the 5th anchor point 123, first anchor point 119 and the 6th anchor point 124 are the drive end of MEMS microaccelerometer 101, and the 4th anchor point 122 and the 5th anchor point 123 are the output terminal of MEMS micro-acceleration gauge 101.When MEMS micro-acceleration gauge 101 adopts double quality blocks structure, automatic gain control unit 107 has the first feedback drive output 127 and the second feedback drive output 128, and drive output 128 is corresponding with the drive end 110 of MEMS micro-acceleration gauge circuit connects for described first feedback drive output 127 and the second feedback.
In the embodiment of the present invention, the single mass structure of MEMS micro-acceleration gauge 101 or double quality blocks structure are all identical with the structure of existing MEMS micro-acceleration gauge 101, utilize the characteristic of finger-cross structure can produce the electric capacity of differential variation, change into change in voltage further by the variable of electric capacity, thus be transferred to next stage CMOS sensing circuit and read.What the invention process showed automatic gain control unit 107 and MEMS micro-acceleration gauge circuit mates syndeton.
In the present invention, CMOS sensing circuit adopts CMOS technology manufacture, there is the effect that chopped wave stabilizing amplifies, by modulator 102, amplifier 103, detuner 105, low-pass filter 106 forms, by modulation /demodulation effect, noise and imbalance are reduced, the sensor signal after being amplified further, simultaneously, because the signal after chopper amplification has the frequency characteristic of following MEMS micro-acceleration gauge 101, therefore can by detecting this signal thus realizing closed-loop driving circuit.
Close-loop feedback driving circuit in the present invention adopts CMOS technology manufacture, be made up of peak detection circuit 112 and variable gain operational amplifier 111 two parts, by detecting the chopper amplification output signal of CMOS sensing circuit, thus the driving voltage of MEMS micro-acceleration gauge 101 is regulated through row, thus have the characteristic of following the tracks of MEMS micro-acceleration gauge 101 resonance frequency, thus MEMS micro-acceleration gauge self-adaptation can be made at resonance frequency place.
The present invention can reduce circuit electrical noise and imbalance, amplifies MEMS sensor signal simultaneously, and provides driving circuit for MEMS micro-acceleration gauge, and integrated circuit has adaptive characteristic, does not need external circuits to drive mems accelerometer.