CN102323848A - Band-gap reference circuit capable of eliminating offset influence by chopping technology - Google Patents
Band-gap reference circuit capable of eliminating offset influence by chopping technology Download PDFInfo
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- CN102323848A CN102323848A CN201110212076A CN201110212076A CN102323848A CN 102323848 A CN102323848 A CN 102323848A CN 201110212076 A CN201110212076 A CN 201110212076A CN 201110212076 A CN201110212076 A CN 201110212076A CN 102323848 A CN102323848 A CN 102323848A
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Abstract
The invention relates to a band-gap reference circuit capable of eliminating offset influence by a chopping technology. The band-gap reference circuit comprises a fully differential modulator, wherein a first input terminal of the fully differential modulator is connected with a fourth resistor and an emitting electrode of a third triode, and a second input terminal of the fully differential modulator is connected with a fifth resistor and is connected with an emitting electrode of a fourth triode through a sixth resistor; an output terminal of the fully differential modulator is connected with an input terminal of an operational amplifier, an output terminal of the operational amplifier is connected with an input terminal of a demodulator, and an output terminal of the demodulator is connected with an input terminal of a filter; the fourth resistor and the fifth resistor are both connected with an output terminal of the filter; base electrode ends and collecting electrode ends of the third triode and the fourth triode are connected with the same reference potential. By adopting the band-gap reference circuit, the influence of the offset voltage and 1/f noise of the existing operational amplifier on output voltage is lowered, the change of output voltage temperature coefficient is reduced and the complexity of circuit design is lowered. Therefore, the band-gap reference circuit has the advantages of simple structure, high safety and high reliability.
Description
Technical field
The present invention relates to a kind of band-gap reference circuit, especially a kind of wave chopping technology that utilizes is eliminated the band-gap reference circuit that imbalance influences, and belongs to the technical field of band-gap reference circuit.
Background technology
Further complicated along with circuit system structure requires increasingly highly to the basic module of mimic channel, proposed more speed, more high-precision requirement like A/D, D/A, phaselocked loop, filter circuit.In these modular circuits, generally all need relevant voltage or current reference circuit, can voltage or current source with temperature and power source change be provided not for system.Band-gap reference has advantages such as low-temperature coefficient, high PSRR, and is unique actual available reference voltage, thereby has obtained to use widely and study.
As shown in Figure 1: as to be the structural representation of band-gap reference circuit at present commonly used.Among the figure, the in-phase end of operational amplifier links to each other with the output terminal of operational amplifier through first resistance R 1, and the end of oppisite phase of operational amplifier links to each other with the output terminal of operational amplifier through second resistance R 2; The in-phase end of operational amplifier also links to each other with the emitter of the first triode Q1, the collector of the first triode Q1 and base terminal ground connection; The end of oppisite phase of operational amplifier also links to each other with the emitter of the second triode Q2, the collector of the second triode Q2 and the same reference potential of base stage termination; The first triode Q1 and the second triode Q2 are the PNP triode.Because can there be imbalance in operational amplifier itself, so but it is input as zero its output voltage and non-vanishing.The input offset voltage of operational amplifier can make output voltage produce error in the circuit, and this error can be exaggerated.In addition, therefore offset voltage itself can increase the temperature coefficient of output voltage with temperature variation.In addition, the 1/f noise of operational amplifier also can limit the precision of reference voltage.
In the accompanying drawing 3 in the U.S. Pat 6075407 of James T.Doyle etc., show another kind of band-gap reference circuit structure.Said band-gap reference circuit complex structure, simultaneously, because there is the offset voltage problem in operational amplifier itself, still there is the problem of output error in the band-gap reference circuit of said structure.
Summary of the invention
The objective of the invention is to overcome the deficiency that exists in the prior art; A kind of band-gap reference circuit that utilizes wave chopping technology to eliminate the imbalance influence is provided, and it is simple in structure, has solved the problem of band-gap circuit output imbalance; And can effectively eliminate the reference voltage error that causes because of 1/f noise, safe and reliable.
According to technical scheme provided by the invention; The said band-gap reference circuit that utilizes wave chopping technology to eliminate the imbalance influence; Comprise full difference modulator; The first input end of said full difference modulator links to each other with the emitter of the 4th resistance and the 3rd triode, and second input end of full difference modulator links to each other with the 5th resistance, and second input end of full difference modulator links to each other with the emitter of the 4th triode through the 6th resistance; The input end of the output terminal operational amplifier of full difference modulator links to each other, and the output terminal of operational amplifier links to each other with the input end of detuner, and the output terminal of detuner links to each other with the input end of wave filter; The 4th resistance links to each other with the output terminal of wave filter corresponding to the other end that links to each other with first input end, and the 5th resistance links to each other with the output terminal of wave filter corresponding to the other end that second input end links to each other; The base terminal of the 3rd triode and the 4th triode and collector terminal all connect same reference potential.
Said full difference modulator comprises first switching tube and the 4th switching tube; First switching tube links to each other with the 4th switching tube respective end portions through second switch pipe and the 3rd switching tube; First switching tube links to each other with clock signal with the 4th control end of switching tube, and second switch pipe and the 3rd control end of switching tube link to each other with corresponding inversion clock signal.Said first switching tube, second switch pipe, the 3rd switching tube and the 4th switching tube are NMOS pipe or CMOS pipe.Said the 3rd triode and the 4th triode are the PNP triode.
Said detuner comprises the 5th switching tube and the 6th switching tube, and link to each other corresponding with the 6th switching tube one end of the 5th switching tube forms output terminal; The 5th switching tube and the 6th control end of switching tube are linked to each other by clock signal and corresponding inversion clock signal respectively.Said the 5th switching tube and the 6th switching tube are NMOS pipe or CMOS pipe.Said wave filter is a low-pass filter.
Advantage of the present invention: the input end of operational amplifier links to each other with full difference modulator, and the output terminal of operational amplifier links to each other with detuner, and the output terminal of detuner links to each other with wave filter; Can baseband signal be imported in the outside through full difference modulator and become high-frequency signal through chopping modulation, high-frequency signal amplifies back output through operational amplifier, and carries out demodulation by detuner, and through the corresponding high-frequency signal of wave filter filtering; Thereby can reduce existing offset voltage and 1/f noise to output voltage influence, and can reduce by offset voltage and cause the output voltage temperature coefficient variation, reduce the complexity of circuit design with temperature variation, simple in structure, safe and reliable.
Description of drawings
Fig. 1 is the schematic diagram of existing band-gap reference circuit.
Fig. 2 is a structured flowchart of the present invention.
Fig. 3 is the structure principle chart of full difference modulator of the present invention.
Fig. 4 is the structure principle chart of detuner of the present invention.
Embodiment
Below in conjunction with concrete accompanying drawing and embodiment the present invention is described further.
Like Fig. 2～shown in Figure 4: the present invention includes full difference modulator 106, operational amplifier 107, detuner 108, wave filter 109, first switching tube 110, second switch pipe 111, the 3rd switching tube 112, the 4th switching tube 113, the 5th switching tube 114, the 6th switching tube 115, first input end 116 and second input end 117.
As shown in Figure 2: as to cause that with temperature variation output voltage temperature coefficient changes for the offset voltage that reduces amplifier in the existing band-gap reference circuit reaches by offset voltage; The input end of said operational amplifier 107 links to each other with full difference modulator 106; Said full difference modulator 106 has the first input end 116 and second input end 117; The output terminal of operational amplifier 107 links to each other with detuner 108; The output terminal of detuner 108 is exported after through wave filter 109 filtering, and wave filter 109 adopts low-pass filters; Through the high-frequency signal that produces after wave filter 109 filterings process full difference modulator 106 and detuner 108 conversion.The output terminal of wave filter 109 links to each other with the first input end 116 of full difference modulator 106 through the 4th resistance R 4, and the output terminal of wave filter 109 links to each other with second input end of full difference modulator 106 through the 5th resistance R 5.The first input end 116 of said full difference modulator 106 also links to each other with the 3rd triode Q3; Particularly, the first input end 116 of full difference modulator 106 links to each other with the emitter of the 3rd triode Q3, and the base terminal of the 3rd triode Q3 and collector terminal all connect same reference potential; The 3rd triode Q3 adopts the PNP triode.Second input end 117 of full difference modulator 106 also links to each other with the 4th triode Q4 through the 6th resistance R 6; Particularly, second input end 117 of full difference modulator 106 links to each other with the emitter of the 4th triode Q4 through the 6th resistance R 6, and the base terminal of the 4th triode Q4 and collector terminal all connect same reference potential, and the 4th triode Q4 adopts the PNP triode.Full difference modulator 106 can be modulated into high-frequency signal with signal; Said high-frequency signal amplifies output through operational amplifier 107; At last through exporting after detuner 108 demodulation and wave filter 109 filtering; Offset voltage and the 1/f noise that can effectively reduce operational amplifier 107 output be to output voltage influence, and can reduce the variation that is caused output voltage temperature coefficient by offset voltage with temperature variation.
As shown in Figure 3: as to be the structure principle chart of full difference modulator 106 of the present invention.Full difference modulator 106 comprises first switching tube 110, second switch pipe 111, the 3rd switching tube 112 and the 4th switching tube 113; Wherein, first switching tube 110, second switch pipe 111, the 3rd switching tube 112 and the 4th switching tube 113 all adopt N-channel MOS pipe or CMOS pipe (wherein having connected N-channel MOS transistor and P channel MOS transistor concurrently).The gate terminal of the first switching tube pipe 110 and the 4th switching tube 113 all adopts clock Ф to control, and the gate terminal of second switch pipe 111 and the 3rd switching tube 112 all adopts inversion clock Ф to control.Specifically be connected to: the source terminal of first switching tube 110 links to each other with the drain electrode end of the 4th switching tube 113 through second switch pipe 111; The source terminal of second switch pipe 111 links to each other with the source terminal of first switching tube 110, and the drain electrode end of second switch pipe 111 links to each other with the drain electrode end of the 4th switching tube 113; Be provided with the 3rd switching tube 112 between the source terminal of the drain electrode end of first switching tube 110 and the 4th switching tube 113; The source terminal of the 3rd switching tube 112 links to each other with the source terminal of the 4th switching tube 113, and the drain electrode end of the 3rd switching tube 112 links to each other with the drain electrode end of first switching tube 110.Voltage between first switching tube 110 and the 3rd switching tube 113 source terminals forms V
In1, the voltage between first switching tube 110 and the 4th switching tube 113 drain electrode ends forms V
Out1When first switching tube 110 and the 4th switching tube 113 trigger control through clock Ф, after second switch pipe 111 and the 3rd switching tube 112 are controlled through inversion clock Ф, can low frequency signal be modulated to high-frequency signal output through the chopping modulation technology.
As shown in Figure 4: as to be the structure principle chart of detuner 108 of the present invention.Detuner 108 comprises the 5th switching tube 114 and the 6th switching tube 115, and wherein, the 5th switching tube 114 and the 6th switching tube 115 all adopt N-channel MOS pipe or CMOS pipe.The gate terminal of the 5th switching tube 114 is controlled through clock Ф, and the gate terminal of the 6th switching tube 115 is controlled through inversion clock Ф.The drain electrode end of the 5th switching tube 114 and the 6th switching tube 115 forms output terminal V after connecting into equipotential
Out2, the source terminal of the 5th switching tube 114 and the 6th switching tube 115 forms input end V
In2Behind detuner 108, can the high-frequency signal that full difference modulator 106 is modulated into be demodulated into baseband signal.
Like Fig. 2～shown in Figure 4: during use; Clock signal Ф is linked to each other with the gate terminal of first switching tube 110, the 4th switching tube 113 and the 5th switching tube 114, and inversion clock Ф signal links to each other with the gate terminal of second switch pipe 111, second switch pipe 112 and the 6th switching tube 115.During work; The first input end 116 and second input end 117 link to each other with voltage source; Be modulated into high-frequency signal after external voltage signal process full difference modulator 106 chopping modulation, said high-frequency signal amplifies back output through operational amplifier 107, and is demodulated to baseband signal by detuner 108; Said baseband signal is exported by low-pass filter 109 filtering high-frequency signals; Wave filter 109 feeds back through the 4th resistance R 4 and the 5th resistance R 5; Thereby can reduce existing computing offset voltage and 1/f noise to output voltage influence, and reduce the variation that causes output voltage temperature coefficient by offset voltage with temperature variation.The present invention forms the chopping modulation technology through full difference modulator 106, and the complicacy when having avoided adopting digital calibration techniques to improve band-gap reference circuit has reduced the realization difficulty, and is simple in structure, safe and reliable.
Claims (7)
1. one kind is utilized wave chopping technology to eliminate the band-gap reference circuit that imbalance influences; It is characterized in that: comprise full difference modulator (106); The first input end (116) of said full difference modulator (106) links to each other with the emitter of the 4th resistance (R4) and the 3rd triode (Q3); Second input end (117) of full difference modulator (106) links to each other with the 5th resistance (R5), and second input end of full difference modulator (106) links to each other with the emitter of the 4th triode (Q4) through the 6th resistance (R6); The input end of the output terminal operational amplifier (107) of full difference modulator (106) links to each other; The output terminal of operational amplifier (107) links to each other with the input end of detuner (108), and the output terminal of detuner (108) links to each other with the input end of wave filter (109); The 4th resistance (R4) links to each other with the output terminal of wave filter (109) corresponding to the other end that links to each other with first input end (116), and the 5th resistance (R5) links to each other with the output terminal of wave filter (109) corresponding to the other end that second input end (117) links to each other; The 3rd triode (Q3) all connects same reference potential with the base terminal and the collector terminal of the 4th triode (Q4).
2. the band-gap reference circuit that utilizes wave chopping technology to eliminate the imbalance influence according to claim 1, it is characterized in that: said full difference modulator (106) comprises first switching tube (110) and the 4th switching tube (113); First switching tube (110) links to each other with the 4th switching tube (113) respective end portions through second switch pipe (111) and the 3rd switching tube (112); First switching tube (110) links to each other with clock signal with the control end of the 4th switching tube (113), and the control end of second switch pipe (111) and the 3rd switching tube (112) links to each other with corresponding inversion clock signal.
3. the band-gap reference circuit that utilizes wave chopping technology to eliminate the imbalance influence according to claim 2 is characterized in that: said first switching tube (110), second switch pipe (111), the 3rd switching tube (112) and the 4th switching tube (113) are NMOS pipe or CMOS pipe.
4. the band-gap reference circuit that utilizes wave chopping technology to eliminate the imbalance influence according to claim 1, it is characterized in that: said the 3rd triode (Q3) and the 4th triode (Q4) are the PNP triode.
5. the band-gap reference circuit that utilizes wave chopping technology to eliminate the imbalance influence according to claim 1; It is characterized in that: said detuner (108) comprises the 5th switching tube (114) and the 6th switching tube (115), and link to each other corresponding with the 6th switching tube (115) one ends of the 5th switching tube (114) forms output terminal; The control end of the 5th switching tube (114) and the 6th switching tube (115) is linked to each other by clock signal and corresponding inversion clock signal respectively.
6. the band-gap reference circuit that utilizes wave chopping technology to eliminate the imbalance influence according to claim 5 is characterized in that: said the 5th switching tube (114) and the 6th switching tube (115) are NMOS pipe or CMOS pipe.
7. the band-gap reference circuit that utilizes wave chopping technology to eliminate the imbalance influence according to claim 1, it is characterized in that: said wave filter (109) is a low-pass filter.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110212076A CN102323848A (en) | 2011-07-27 | 2011-07-27 | Band-gap reference circuit capable of eliminating offset influence by chopping technology |
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| CN201110212076A CN102323848A (en) | 2011-07-27 | 2011-07-27 | Band-gap reference circuit capable of eliminating offset influence by chopping technology |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102780459A (en) * | 2012-07-21 | 2012-11-14 | 江苏物联网研究发展中心 | Pseudorandom modulation-demodulation chopping circuit applied to MEMS (micro-electro-mechanical system) reading circuit |
| CN102843102A (en) * | 2012-09-28 | 2012-12-26 | 江苏物联网研究发展中心 | Phase-locked amplifying circuit of monolithic integrated MEMS (Micro Electro Mechanical Systems) capacitive sensor |
| CN103488232A (en) * | 2013-09-30 | 2014-01-01 | 深圳市芯海科技有限公司 | Chopping band-gap reference circuit based on CMOS process and reference voltage chip |
| CN103995554A (en) * | 2013-02-19 | 2014-08-20 | 创杰科技股份有限公司 | Voltage generator |
| CN104111684A (en) * | 2014-07-14 | 2014-10-22 | 深圳市科创达微电子有限公司 | Switch control band-gap reference circuit with low offset voltage |
| CN104375546A (en) * | 2014-03-18 | 2015-02-25 | 苏州芯动科技有限公司 | Chopped wave band-gap reference device with switched-capacitor filter |
| CN104536501A (en) * | 2014-10-20 | 2015-04-22 | 苏州市职业大学 | Low-noise current fine adjustment reference source |
| CN104601127A (en) * | 2013-10-31 | 2015-05-06 | 上海华虹集成电路有限责任公司 | Operational amplifier circuit and reference voltage generating circuit module |
| CN108562373A (en) * | 2018-04-24 | 2018-09-21 | 电子科技大学 | A kind of high-precision temperature sensor circuit |
| CN108572034A (en) * | 2018-04-24 | 2018-09-25 | 电子科技大学 | A kind of temperature sensor circuit of embedded clock |
| CN111445865A (en) * | 2020-04-02 | 2020-07-24 | 深圳能芯半导体有限公司 | Output voltage precision control circuit and precision control method applied to AMO L ED display |
| CN114115422A (en) * | 2021-12-10 | 2022-03-01 | 博大融科(北京)信息技术有限公司 | Band gap reference circuit |
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| CN201673425U (en) * | 2010-03-25 | 2010-12-15 | 上海沙丘微电子有限公司 | Low-detuning and low-noise band-gap reference source circuit with stable chopped wave |
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| CN101351757A (en) * | 2005-12-29 | 2009-01-21 | 柏树半导体公司 | Low power bandgap reference circuit with increased accuracy and reduced area consumption |
| CN201673425U (en) * | 2010-03-25 | 2010-12-15 | 上海沙丘微电子有限公司 | Low-detuning and low-noise band-gap reference source circuit with stable chopped wave |
Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102780459A (en) * | 2012-07-21 | 2012-11-14 | 江苏物联网研究发展中心 | Pseudorandom modulation-demodulation chopping circuit applied to MEMS (micro-electro-mechanical system) reading circuit |
| CN102780459B (en) * | 2012-07-21 | 2015-02-11 | 江苏物联网研究发展中心 | Pseudorandom modulation-demodulation chopping circuit applied to MEMS (micro-electro-mechanical system) reading circuit |
| CN102843102A (en) * | 2012-09-28 | 2012-12-26 | 江苏物联网研究发展中心 | Phase-locked amplifying circuit of monolithic integrated MEMS (Micro Electro Mechanical Systems) capacitive sensor |
| CN102843102B (en) * | 2012-09-28 | 2015-04-22 | 江苏物联网研究发展中心 | Phase-locked amplifying circuit of monolithic integrated MEMS (Micro Electro Mechanical Systems) capacitive sensor |
| CN103995554A (en) * | 2013-02-19 | 2014-08-20 | 创杰科技股份有限公司 | Voltage generator |
| CN103995554B (en) * | 2013-02-19 | 2016-12-28 | 密克罗奇普技术公司 | Voltage generator |
| CN103488232A (en) * | 2013-09-30 | 2014-01-01 | 深圳市芯海科技有限公司 | Chopping band-gap reference circuit based on CMOS process and reference voltage chip |
| CN104601127A (en) * | 2013-10-31 | 2015-05-06 | 上海华虹集成电路有限责任公司 | Operational amplifier circuit and reference voltage generating circuit module |
| CN104375546A (en) * | 2014-03-18 | 2015-02-25 | 苏州芯动科技有限公司 | Chopped wave band-gap reference device with switched-capacitor filter |
| CN104111684A (en) * | 2014-07-14 | 2014-10-22 | 深圳市科创达微电子有限公司 | Switch control band-gap reference circuit with low offset voltage |
| CN104536501B (en) * | 2014-10-20 | 2016-04-20 | 苏州市职业大学 | A kind of low-noise current fine setting reference source |
| CN104536501A (en) * | 2014-10-20 | 2015-04-22 | 苏州市职业大学 | Low-noise current fine adjustment reference source |
| CN108562373A (en) * | 2018-04-24 | 2018-09-21 | 电子科技大学 | A kind of high-precision temperature sensor circuit |
| CN108572034A (en) * | 2018-04-24 | 2018-09-25 | 电子科技大学 | A kind of temperature sensor circuit of embedded clock |
| CN108572034B (en) * | 2018-04-24 | 2020-11-13 | 电子科技大学 | Temperature sensor circuit with built-in clock |
| CN111445865A (en) * | 2020-04-02 | 2020-07-24 | 深圳能芯半导体有限公司 | Output voltage precision control circuit and precision control method applied to AMO L ED display |
| CN111445865B (en) * | 2020-04-02 | 2022-06-14 | 深圳能芯半导体有限公司 | Output voltage precision control circuit and precision control method applied to AMOLED display |
| CN114115422A (en) * | 2021-12-10 | 2022-03-01 | 博大融科(北京)信息技术有限公司 | Band gap reference circuit |
| CN114115422B (en) * | 2021-12-10 | 2023-10-20 | 河南省科学院集成电路研究所 | Band gap reference circuit |
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Application publication date: 20120118 |