CN104285287B - 镀铝铜条带 - Google Patents

镀铝铜条带 Download PDF

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Publication number
CN104285287B
CN104285287B CN201380023826.3A CN201380023826A CN104285287B CN 104285287 B CN104285287 B CN 104285287B CN 201380023826 A CN201380023826 A CN 201380023826A CN 104285287 B CN104285287 B CN 104285287B
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band
coating
layer
sectional
range
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CN201380023826.3A
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CN104285287A (zh
Inventor
E.米尔克
P.普雷诺西尔
S.托马斯
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Heraeus Deutschland GmbH and Co KG
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Heraeus Materials Technology GmbH and Co KG
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    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H01B1/023—Alloys based on aluminium
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    • B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21C—MANUFACTURE OF METAL SHEETS, WIRE, RODS, TUBES OR PROFILES, OTHERWISE THAN BY ROLLING; AUXILIARY OPERATIONS USED IN CONNECTION WITH METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL
    • B21C1/00—Manufacture of metal sheets, metal wire, metal rods, metal tubes by drawing
    • B21C1/003—Drawing materials of special alloys so far as the composition of the alloy requires or permits special drawing methods or sequences
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21C—MANUFACTURE OF METAL SHEETS, WIRE, RODS, TUBES OR PROFILES, OTHERWISE THAN BY ROLLING; AUXILIARY OPERATIONS USED IN CONNECTION WITH METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL
    • B21C9/00—Cooling, heating or lubricating drawing material
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    • B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
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Abstract

本发明涉及一种条带，优选地用于微电子学中的结合的结合条带，包括包含具有表面的铜的第一层（2）和被叠加在第一层（2）的表面上的至少一个涂层（3）以及中间层（7），其中，该涂层（3）包括铝，其中，在条带的截面图中，基于条带的截面的总面积，第一层（2）的面积份额在从50至96%范围内，其中，截面图中的条带的宽度和高度之间的纵横比在从0.03至小于0.8范围内，其中，所述条带具有在从25000µm2至800000µm2范围内的截面面积，其中，所述中间层（7）被布置在第一层（2）与涂层（7）之间。其中，所述中间层（7）包括至少一个金属间相，其包括第一层（2）的材料和涂层（3）的材料。本发明还涉及一种用于制作导线的工艺、由所述工艺可获得的导线、包括至少两个元件和至少上述导线的电设备、包括所述电设备的推进设备和由楔结合通过上述导线来连接两个元件的工艺。

Description

镀铝铜条带
本发明涉及一种条带，优选地用于微电子学中的结合的结合条带，包括包含具有表面的铜的第一层和被叠加在第一层的表面上的至少一个涂层以及中间层，其中，涂层包括铝，其中，在条带的截面图中，基于条带的截面的总面积，第一层的面积份额在从50至96%范围内，其中，截面图中的条带的宽度和高度的纵横比在从0.03至小于0.8范围内，其中，条带具有在从25’000 µm2至800’000 µm2范围内的截面面积，其中，中间层被布置在第一层与涂层之间，其中，该中间层包括至少一个金属间相，其包括第一层的材料和涂层的材料。本发明还涉及一种用于制作条带的工艺、用所述工艺可获得的条带、包括至少两个元件和至少上述条带的电设备、包括所述电设备的推进设备和由楔结合通过上述条带来连接两个元件的工艺。
结合导线在半导体器件的制造中被用于在半导体器件制造期间将集成电路和印刷电路板电互连。此外，结合导线在功率电子应用中被用来将晶体管、二极管等与外壳的焊盘或插脚电连接。虽然结合导线起初由金制成，但现在使用较不昂贵的材料，诸如铜或铝。虽然铜线提供非常好的电和热传导性，但铜线的楔结合与由铝制成的导线相比具有其挑战。此外，铜线易受导线的氧化。
相对于导线几何结构，非常常见的是圆形截面的导线。用于结合的另一感兴趣几何结构是具有基本上矩形截面的条带。两个几何结构都具有其优点，使得其对特定的应用有用。因此，两个类型的几何结构在市场中具有其份额。例如，条带针对给定的截面面积具有较大接触面积。然而，条带的弯曲是有限的，并且在结合时必须考虑到条带的取向以便到达条带与其被结合到的元件之间的可接受电接触。转到结合导线，这些弯曲起来更加灵活。然而，结合涉及到结合工艺中的导线的焊接或较大变形，其可造成损害或者甚至毁坏结合焊盘和其被结合到那的元件的底层电结构。
某些最近开发针对具有芯和壳的结合导线，其是例如涂层。作为芯材料，常常选择铜或金。关于涂层，铝是更常见的选择中的一个。这些芯壳结合导线将铜线的优点中的某些和铝线中的某些相组合。最近成就使得将标准楔结合工艺用于此类镀铝铜线是可能的。尽管如此，一直存在对进一步改善关于导线或条带的结合技术和结合工艺的需要。
因此，本发明的目的是提供改善的条带。
本发明的另一目的是提供一种条带，其具有良好的处理性质且在互连时其不具有特定需要，因此节省成本。
本发明的目的还提供具有优良电和热传导性的条带。
本发明的又一目的是提供展现改善的可靠性的条带。
本发明的又一目的是提供一种结合技术，通过其来避免被结合结构或在被结合结构的底层的结构的故障和/或毁坏。
本发明的又一目的是提供展现优良的可结合性的的条带。
本发明的另一目的是提供对腐蚀和/或氧化具有改善的抵抗的条带。
本发明的另一目的是提供将与标准芯片和结合技术一起使用的新型条带，该新型条带相比于常规导线而言确保延长的寿命。
本发明的另一目的是提供一种结合技术，其比现在的标准结合工艺更加简单且因此节省成本。
本发明的又一目的是提供用于电气设备中的更紧密包装的装置。
本发明的又一目的是提供一种改善的条带，其至少朝着环境氧化和退化如标准铝结合条带一样稳定。
又一目的是提供改善的电气设备，特别是用于功率电子装置，其与其中用标准铝线和铝条带来将电气元件互连的常规设备相比具有延长的寿命。
另一目的是提供改善的电气设备，特别是用于功率电子装置，其与其中结合基于铝线的常规设备相比在更高电流流动下操作。
本发明的另一目的是提供此类改善的电气设备，其具有与上述常规设备相同的尺寸和类似的芯片设计。另一目的是提供用于在最初被设计成用于常规电气设备制造的生产线上制造此类改善电气设备的装置。这将使用于实现改善技术的成本最小化。
又一目的是提供改善的电气设备，其中与常规电气设备相比降低了非故意内部电桥接的概率。此外，目的是简化或者甚至能够省略关于电气设备中的非故意内部桥接的特定预防措施。
令人惊讶地，已发现本发明的条带将解决上述目的中的至少一个。此外，已发现一种制造这些条带的工艺，其克服了制造条带的挑战中的至少一个。此外，发现包括本发明的条带的半导体在根据本发明的条带与其它电气元件（例如印刷电路板、焊盘/插脚等）之间的接口处更加可靠。
对上述目的中的至少一个的解决方案的贡献由形成种类的权利要求的主题提供，由此，形成种类的独立权利要求的从属子权利要求表示本发明的优选方面，其主题同样地对解决上述目的中的至少一个作出贡献。
本发明的第一方面是一种条带，包括：
a. 第一层，包括具有表面的铜；以及
b. 被叠加在第一层的表面上的至少一个涂层，其中，该涂层包括铝，以及
c. 中间层，
其中，在条带的截面图中，第一层的面积份额在从50至96 %范围内、优选地在从60至95 %或从65至92 %或从70至92 %范围内，每个基于条带的截面的总面积，以及
其中，截面图中的条带的宽度和高度之间的纵横比在从0.03至小于0.8、优选地从0.03至0.5或从0.1至0.3范围内，
其中，所述条带具有在从25’000µm2至800’000µm2、优选地从100’000µm2至600’000µm2范围内的截面面积，
其中，中间层（7）被布置在第一层（2）与涂层（3）之间，其中，中间层（7）包括至少一个金属间相，其包括第一层（2）的材料和涂层（3）的材料。
条带优选地是用于微电子学中的结合的结合条带。该条带优选地是单件物体。应在条带的纵向延伸的至少80%、优选地90%内满足用于上述截面图和直径的准则。
本上下文中的术语“截面图”指的是通过条带切割的视图，其中，切割的平面垂直于条带的纵向延伸。在条带的纵向延伸上的任何位置处可以找到截面图。
使用条带的截面图来评估条带的尺寸。为了进一步参考，画出了包围条带的平行四边形R1，使得平行四边形R1的面积AR1与条带的面积Aribbon的面积差与能够画出以包围条带的所有其它平行四边形Rx相比是最小的。平行四边形R1具有两个侧边a和两个侧边b，其中，侧边a比侧边b长。基于平行四边形R1的任何顶点而在（a/2，b/2）位置处找到条带的中心。
截面图中的条带的“宽度”是条带的边界线与能够通过条带平行于平行四边形R1的侧边a定位的所有线之间的平均端到端距离。
截面图中的条带的“高度”是条带的边界线与能够通过条带平行于平行四边形R1的侧边b定位的所有线之间的平均端到端距离。
术语“直径”是任何平面和在任何方向上的所有几何直径的算术平均，其中，所有平面都垂直于导线的纵向延伸。
在本发明的上下文中的术语“叠加”用来描述第一项目（例如层、片材或铜芯）相对于第二项目（例如涂层或另一片材）的相对位置。可能地，可在第一和第二项目之间布置诸如中间层之类的更多项目。优选地，第二项目被至少部分地叠加在第一项目的表面上，例如相对于第一项目的总表面达至少30 %、50 %、70 %或达至少90%。
在本发明的上下文中的层的术语“厚度”用来定义在条带的截面图中确定的层的大小的算术平均，其中，相对于在从(a/2)-0.4*a至(a/2)+0.4*a范围内的位置a'上的平行于侧边b的方向上的R1来确定算术平均。
在本发明的上下文中的关于条带的术语“中间层”是第一层与涂层之间的条带区域。在此区域中，如在第一层中的材料以及如在涂层中的材料相组合地存在，例如以至少一个金属间相的形式。
在本发明的上下文中的术语“金属间相”用来定义两个或更多金属的相，其中，不同的元素被排序到结构中的不同位点中，该位点具有不同的局部环境且常常是明确地定义的固定化学计量。这是关于合金的差异，其中不同的元素被随机地分布。
在如上文定义的截面图中确定了长度的所有上述尺寸，例如厚度、直径、最长路径、最短路径。
优选地，本发明的条带在条带的截面图中具有基本上矩形区域。本发明的条带可具有圆形边缘。
被涂覆、可能退火的条带的第一层的“表面”被定义成是围绕其中心的第一层的虚拟界限，该虚拟界限是Cu的浓度偏离条带中心处的Cu的浓度超过9.9 %-wt.的地方，该中心如上文所定义。
基于第一层的总重量，根据本发明的第一层包括按重量计至少95%的至少99.9 %Cu的纯度的元素铜（Cu）。优选地，基于第一层的总重量，根据本发明的第一层包括按重量计至少98%的至少99.99 %或99.999 %或99.9999 %的纯度的Cu。
根据本发明的优选方面，第一层中的上述铜的氧含量在从0.1至80 ppm、优选地从0.5至70 ppm或从1至60 ppm或从5至50 ppm或从10至50 ppm范围内。
包括铝的涂层优选地选自由铝、铝合金或两者的组合组成的组。
优选铝是至少99.9 % Al的纯度的元素铝（Al），更优选地，铝的纯度为至少99.99% Al或99.999 % Al。通常此类涂层在铝—空气界面处形成氧化铝的薄层。
优选地，涂层包括按重量计至少80 %、优选地按重量计至少90 %的99.9 %的纯度、而更优选地99.99 %或99.999% Al的纯度的铝，每个基于涂层的总重量。
铝合金的优选示例是基于合金的总量而具有镁的合金（AlMg）和具有1%-wt.的硅的铝的合金（AlSi1）。
根据本发明的另一方面，条带的宽度在从100至5000 µm、优选地从500至2000 µm或从1000至2000 µm范围内。
根据本发明的另一方面，条带的高度在从50至500 µm、优选地从500至400 µm或从100至300 µm或从100至200 µm范围内。
条带的宽度和高度的优选组合是500 µm×50 µm、1000 µm×100 µm、2000 µm×200 µm、2000 µm×300 µm和2000 µm×400 µm。
条带的中间层被定义成是第一层与涂层之间的条带区域，其中，Cu的浓度基于中间层的总重量偏离基于第一层总重量的第一层中的Cu浓度超过5%-wt.，并且其中，Al的浓度基于中间层的总重量偏离基于涂层的总重量的涂层中的Al的浓度超过5%-wt.。
可以例如使用光显微术或扫描电子显微术在条带的截面图中确定条带的上述尺寸，即涂层的厚度、中间层的厚度和铜芯的直径。在光显微术中，用铜红对第一层进行着色，涂层是银色的且中间层是灰色的。可以使用组合的SEM/EDX来确定上文所述的铜和铝的浓度。（扫描电子显微术/能量色散X射线光谱术）。
根据本发明的另一方面，条带的任何截面图中的中间层的面积份额在从0.1至15%、优选地从0.1至10 %或从0.3至5 %或从0.8至8.5%范围内，每个基于条带的截面的总面积。
根据本发明的另一方面，中间层的厚度在从0.1至5、优选地从0.5至3µm范围内。应在条带的纵向延伸的至少80 %、优选地90 %内满足用于中间层的厚度的上述准则。有时，中间层的厚度方面的偏差可由于中间层的缺陷（例如气孔）而发生。
根据本发明的另一方面，中间层的厚度的标准偏差在从0.05至0.5 µm、优选地从0.1至0.3 µm范围内。
根据本发明的另一方面，条带的截面图处的涂层的面积份额在从3.9至50 %、优选地从8至40 %范围内，每个基于导线的截面的总面积。
根据本发明的另一方面，涂层的厚度在从10至70 µm、优选地从20至70 µm或从20至60 µm范围内。
根据本发明的另一方面，涂层的厚度的标准偏差在从0.1至10 µm、优选地从0.5至7 µm或从1至6 µm范围内。
根据本发明的另一方面，第一层的厚度在从25至380 µm、优选地从80至350 µm或从150至300 µm范围内。
根据本发明的另一方面，第一层的厚度的标准偏差在从0.1至10 µm、优选地从0.5至7 µm或从1至6 µm范围内。
根据本发明的另一方面，耗散功对于根据本发明的条带而言是由纯Al制成的参考条带的耗散功的至少2倍、优选地至少3倍高。优选地，在从20000至120000测试循环范围内的测试循环中，耗散功对于根据本发明的条带而言是由纯Al制成的参考条带的耗散功的至少2倍、优选地至少3倍高。更优选地，在从20000至120000测试循环范围内的所有测试循环中，耗散功对于根据本发明的条带而言是由纯Al制成的参考条带的耗散功的至少2倍、更优选地至少3倍高。然而，在某些情况下，用于根据本发明的条带的耗散功率是由纯Al制成的参考条带的耗散功的不超过10倍高。由纯Al制成的参考条带是由散布50 ppm镍的99.999 %纯度的铝制成的条带（由Heraeus/德国以“AL-H11 CR”之名出售），并且其具有与本发明的条带相同的截面面积。
根据本发明的另一方面，最大应变对于根据本发明的条带而言是由纯Al制成的参考条带的最大应变的至少1.5倍、优选地至少2倍或至少4倍高。优选地，在从20000至120000测试循环范围内的测试循环中，最大应变对于根据本发明的条带而言是来自由纯Al制成的参考条带的最大应变的至少2倍、优选地至少4倍高。更优选地，在从20000至120000测试循环范围内的所有测试循环中，最大应变对于根据本发明的条带而言是由纯Al制成的参考条带的最大应变至少2倍、优选地至少4倍高。然而，在某些情况下，根据本发明的条带的最大应变是由纯Al制成的参考条带的最大应变的不超过5倍高。由纯Al制成的参考条带是由散布50 ppm镍的99.999 %纯度的铝制成的条带（由Heraeus/德国以“AL-H11 CR”之名出售），并且其具有与本发明的条带相同的截面面积。
根据本发明的另一方面，在从20000至120000测试循环范围内的测试循环中，功率循环测试中的在相同条件下的循环数目对于根据本发明的条带而言是由纯Al制成的参考条带的功率循环测试的至少3倍、优选地至少4倍高。更优选地，在从20000至120000测试循环范围内的所有测试循环中，功率循环测试对于根据本发明的条带而言是由纯Al制成的参考条带的功率循环测试的至少3倍、优选地至少4倍高。然而，在某些情况下，根据本发明的条带的功率循环测试是由纯Al制成的参考条带的耗散功的不超过30倍高。由纯Al制成的参考条带是由散布50 ppm镍的99.999 %纯度的铝制成的条带（由Heraeus/德国以“AL-H11CR”之名出售），并且其具有与本发明的条带相同的截面面积。
根据本发明的另一方面，结合剪切力对于根据本发明的条带而言与对于由纯Al制成的参考条带一样高。下面描述此测试。由纯Al制成的参考条带是由散布50 ppm镍的99.999 %纯度的铝制成的条带（由Heraeus/德国以“AL-H11 CR”之名出售），并且其具有与本发明的条带相同的截面面积。
根据本发明的另一方面，拉力对于根据本发明的条带而言比对于由纯Al制成的参考导线高至少10%。由纯Al制成的参考条带是由散布50 ppm镍的99.999 %纯度的铝制成的条带（由Heraeus/德国以“AL-H11 CR”之名出售），并且其具有与本发明的条带相同的截面面积。
根据本发明的另一方面，本发明的条带满足上述测试条件（即耗散功、最大应变、功率循环测试、条带结合剪切力和楔拉力）中的至少两个或者甚至全部，。
本发明的另一方面是一种用于制造条带的工艺，至少包括以下步骤：
a. 提供包括具有表面的铜芯和涂层的导线前体，该涂层被叠加在铜芯的表面上，其中，该涂层包括铝，
其中，在导线前体的截面图中，铜芯的面积份额在从50至90%、优选地60至100%或70至95 %范围内，每个基于导线前体的截面的总面积，并且
其中，在截面图中通过导线前体的最长路径与最短路径之间的纵横比在从大于0.8至1.0、优选地从0.9至1.0范围内，
其中，导线前体具有在从0.5至5mm、优选地从0.75至3 mm或从0.75至2 mm范围内的直径。
b. 对导线前体进行成形，其中，获得条带前体，
c. 对成形的条带前体进行退火，其中，形成中间层（7），并且然后获得条带。
条带优选地具有在从25000至800000µm2或从100000µm至600000µm范围内的截面面积，
针对上述条带的本发明的各方面也是由用于制造条带的上述工艺获得的条带的优选方面。
为了评估导线前体的尺寸，在截面中通过导线前体的“最长路径”是可以通过截面图的平面内的导线前体的截面敷设的最长弦（chord）。
在截面中通过导线前体的“最短路径”是垂直于上文定义的截面图的平面内的最长路径的最长弦。
如果导线具有完美的圆形截面，则最长路径和最短路径变得不可区别且共享相同的值。
优选地，导线前体在导线前体的截面图中具有基本上圆形的区域。
未涂覆的铜线前体的铜芯的“表面”是导线前体/空气界面。
涂覆的、可能退火的导线前体的铜芯的“表面”被定义为围绕其中心的铜芯的虚拟界线，该虚拟界线是Cu的浓度偏离导线前体中心处的Cu的浓度超过9.9%-wt.的地方，该中心由如上文定义的最短和最长路径两者的交叉点定义。
在本发明的上下文中的关于导线前体的术语“中间层”是铜芯与涂层之间的导线前体区域。在此区域中，如在芯中的材料以及如在涂层中的材料组合地存在，例如以至少一个金属间相的形式。
根据本发明的另一方面，铜芯的直径在从100至500 µm、优选地从150至400 µm或从200至300 µm或从230至250 µm范围内，每个是在导线前体的截面图中确定的。
根据本发明的另一方面，涂层的厚度与铜芯的直径的比在从0.05至0.2、优选地0.05至0.15或从0.1至0.15的范围内，每个在导线前体的截面图中确定。
根据本发明的另一方面，铜芯的直径的标准偏差与铜芯的直径的比在从0.1或更小或0.05或更小或0.03或更小或0.03至0.001范围内，每个在导线前体的截面图中确定。
根据本发明的另一方面，涂层的厚度在从10至60µm、优选地从20至50 µm、优选地20至40 µm或从25至35 µm范围内，每个是在导线前体的截面图中确定的。应在导线前体的纵向延伸的至少80 %、优选地90 %内满足用于厚层的厚度的上述准则。
根据本发明的另一方面，导线前体具有在涂层厚度的标准偏差与涂层厚度之间的比，其在从0.05至0.5、优选地从0.1至0.3的范围内。
根据本发明的另一方面，在导线前体的芯与涂层之间布置中间层。该中间层优选地包括至少一个金属间相，其包括芯的材料和涂层的材料。中间层通常示出用于涉及到的材料中的每个的浓度梯度。如果两个材料都是金属，则形成金属间相。
根据本发明的优选方面，在导线前体的芯与涂层之间布置中间层，其中，该中间层邻近于铜芯且邻近于涂层。
基于第一层的总重量，根据本发明的导线前体的第一层包括按重量计至少95%的至少99.9 % Cu的纯度的元素铜（Cu）。优选地，基于第一层的总重量，根据本发明的第一层包括按重量计至少98%的至少99.99 %或99.999 %或99.9999 %的纯度的Cu。
根据本发明的优选方面，导线前体的第一层中的上述铜的氧含量在从0.1至80ppm、优选地从0.5至70 ppm或从1至60 ppm或从5至50 ppm或从10至50 ppm范围内。
导线的中间层被定义成是铜芯与涂层之间的导线前体的区域，其中，Cu的浓度基于中间层的总重量偏离基于铜芯总重量的铜芯中的Cu浓度超过5%-wt.，并且其中，Al的浓度基于中间层的总重量偏离基于铜芯的总重量的涂层中的Al的浓度超过5%-wt.。
可以例如使用光显微术或扫描电子显微术在导线前体的截面图中确定导线前体的上述尺寸，即涂层的厚度、中间层的厚度和铜芯的直径。在光显微术中，用铜红对第一层进行着色，涂层是银色的且中间层是灰色的。可以使用组合的SEM/EDX来确定上文所述的铜和铝的浓度。（扫描电子显微术/能量色散X射线光谱术）。
可以通过在铜线的表面的至少一部分上形成铝涂层来获得如在步骤a.中的导线前体。优选地，在铜线的表面的100%或从80至100 %或从60至80 %上形成铝层，每个是相对于导线的总表面面积。用于在铜表面上且特别是在铜线上形成铝层的许多技术是已知的。优选技术是镀敷，诸如电镀和无电电镀、由气相的铝的沉积，诸如溅射、离子镀、真空蒸发和化学汽相沉积以及由熔体的铝的沉积。
可以采用铜线的预处理来使表面粗糙度适合和/或向铜线的表面添加图案。用以使铜线的表面适合的许多技术是已知的。优选技术是冷轧成型、研磨和电化学研磨。
已知用以对导线前体进行成形的许多技术。优选技术是滚轧、旋锻、模拉等，其中模拉是特别优选的。更优选地，在3至20个步骤中对导线前体进行拉伸，其中，在每个步骤中，执行在长度方面从6至18%的导线前体的延长。可采用增滑剂。适当的增滑剂有许多且是技术人员已知的。通过对导线前体进行成形来获得条带前体。
本发明的另一方面是一种用于制造条带的工艺，至少包括以下步骤：
A) 提供包括至少99.9 %的纯度的铜的第一片材，
B) 提供包括99.9 %的纯度的铝的至少一个另外的片材，
其中，在第一片材和所述至少一个另外的片材的截面图中，第一片材的截面面积与所述至少一个另外的片材的截面面积的比在从1:1至4:1、优选地从1.2:1至3.8:1的范围内。
C) 将在步骤a.和b.中提供的片材叠加，将片材组合以获得条带前体并对条带前体进行成形
D) 对已成形和组合的片材进行退火，
其中，形成中间层且然后
获得条带。
所述条带优选地具有在从25000至800000 µm2或从100000µm至600000 µm范围内的截面面积，
针对上述条带的本发明的各方面也是由用于制造条带的上述工艺获得的条带的优选方面。
根据本发明的一方面，提供包括99.9%的纯度的铝的至少两个另外的片材。在这种情况下，当在步骤C）中叠加片材时第一片材优选地位于所述至少两个另外的片材之间。
在步骤C）中，将在步骤A）和B）中提供的片材叠加，组合且然后成形以获得已成形条带前体。常常在组合之前直接地执行叠加所述片材。可以根据在本领域中已知的许多技术、优选地通过滚轧来执行组合。而更优选地，在滚轧至条带的期望高度期间调整条带前体的厚度和截面面积。截面面积的适合是通过滚轧同时拉伸所述条带来执行的。
可以根据本领域中已知的许多技术来执行条带前体的成形，优选地通过使用适当地选自在本领域中已知的那些的冲栽模将条带前体切割至已成形条带前体。而更优选地，通过切割至条带的期望宽度来调整已成形条带前体的宽度。
根据本发明的另一方面，在侧面用涂层来涂覆第一层，其被从至少一个另外的层转移。该涂层可以是有机涂层，其应基本上经受住期间的温度。优选地，涂层是金属层，例如包括钯、铂或金，其防止第一层在后续退火期间氧化。有时应用此类涂层来帮助在结合工艺期间保护结合工具。
在上述工艺的步骤c.）和步骤D）中，通过对已成形条带前体进行退火来获得条带。在本领域中已知对条带前体进行退火的许多程序，例如可以在连续或在不连续过程两者中执行条带前体的退火。在特殊应用中，甚至可将连续和不连续过程组合。
根据本发明的优选方面，通过将条带前体加热至在从140至400℃、优选地从160至350℃或从200至300℃或从220至280℃范围内的温度来执行退火，并且保持该温度达30分钟至5小时，优选地从30分钟至3小时。然后，将通过对条带前体进行退火而获得的条带冷却至室温。可以以各种方式来执行该冷却。一个适当的方式是在离开加热区时在环境温度下将条带暴露于周围空气。
根据上述程序的条带到室温（T＝20℃）的冷却通常可以在24小时内实现。应例如通过浸入在冷水中等来避免条带的淬火。因此，另一方面是一种其中不通过条带的淬火来执行条带在离开加热区时的冷却的工艺。
根据本发明的另一方面，在连续过程中、更优选地在管式炉中执行退火。甚至更优选地，用单拉伸机从提供导线前体及成形和退火的步骤来拉伸条带前体。
管式炉中的退火期间的拉伸速度取决于管式炉的管的长度。管越长，更高的拉伸速度越是可行，以便获得能量到一块条带前体的一定暴露。管式炉的管的优选长度在从0.8至2.5 m或从1至2 m或从1.5至2.5 m的范围内。
可将炉的管中的温度调整到拉伸速度或者独立地进行评估。管中的优选温度在从150至600℃或从200至600℃或从250至550℃的范围内。一般地，将温度选择成低于在其处存在于条带前体中的组分中的至少一个或至少两个组分的混合物液化的温度。例如，如果对部分可溶或不可溶的双或多组分合金进行退火，则烘箱中的温度不应超过合金的低共熔温度。
根据本发明的另一方面，将炉中的温度选择成比在其处条带前体的组分中的至少一个或至少两个组分的混合物液化的温度低至少30℃或50℃或80℃。
根据本发明的另一方面，在从1至20 m/分钟或从1至16 m/分钟或从2至18 m/分钟的范围内选择退火速度。
根据本发明的另一方面，可以在惰性气氛或还原气氛中执行退火。这适用于在连续过程（诸如在管式炉中）中以及非连续过程中两者的退火。许多惰性气氛以及还原气氛在本领域中是已知的。关于已知的惰性气氛，氮气是优选的。关于已知的还原气氛，氢气是优选地。此外，优选还原气氛是氮气和氢气的混合物。优选地，氮气和氢气的混合物是优选的，其在从90至98 % - Vol.氮气和从10至2 Vol - %氢气的范围内，每个参考混合物的总体积。氮气/氢气的优选混合物等于93/7、95/5和97/3 Vol-%/Vol-%，每个基于混合物的总体积。如果条带前体的表面的某些部分对被空气中的氧所氧化敏感，例如如果条带前体的铜被暴露于其表面，则在退火中施加还原气氛是特别优选的。
根据本发明的另一方面，在从150℃至600℃范围内的温度下、优选地以在从1至20m/分钟范围内的拉伸速度、而更优选地在还原气氛中在管式炉中执行退火。
本发明的另一方面是通过上文定义的工艺可获得的条带。
根据本发明的另一方面，条带的特征在于以下特征中的至少一个：
a. 耗散功对于根据本发明的条带而言是由纯Al制成的参考条带的耗散功的至少2倍高；
b. 单轴循环测试中的最大应变对于根据本发明的条带而言是由纯Al制成的参考条带的最大应变的至少1.5倍高；
c. 功率循环测试对于根据本发明的条带而言是对于由纯Al制成的参考条带的至少3倍高；
d. 根据本发明的条带的拉力对于该条带而言比对于由纯Al制成的参考条带高至少10%。
e. 根据本发明的条带的结合剪切力对于该条带而言与对于由纯Al制成的参考条带一样高；
f. 根据本发明的条带的电导率比由纯Al制成的参考条带的电导率高出在从20 %至55 %范围内。
上述由纯Al制成的参考条带是由散布50 ppm镍的99.999 %纯度的铝制成的条带（由Heraeus/德国以“AL-H11 CR”之名出售），并且其具有与本发明的条带相同的截面面积。
本发明的另一方面是一种包括两个元件和至少如上文定义的条带或如上所述地制造的条带的电设备。
根据本发明的另一方面，该电设备中的至少一个条带通过楔结合、优选地通过超声楔楔结合而被连接到电设备的另一元件。
根据本发明的另一方面，元件中的至少一个选自由基板、IGBT（即：绝缘栅双极晶体管）、集成电路、晶体管、诸如发光二极管、光电二极管之类的二极管组成的组。
本发明的另一方面是上述条带或根据如上所述的工艺制造的条带在控制单元与受控设备之间的楔-楔结合互连中的使用。
本发明的另一方面是推进设备、优选地推进交通工具、太阳电池或风力涡轮机，该推进设备包括如上所述的至少一个电设备。
本发明的另一方面是一种用于制作电设备的工艺，包括如下步骤
a. 提供至少两个元件；
b. 通过如上所述的条带将两个元件连接，其中，所述连接中的至少一个是通过楔结合执行的。
楔结合技术在本领域中是已知的且在文献中被广泛地描述，例如在Shankara K.Prasad的“Advanced Wirebond Interconnection Technology”，Kluwer AcademicPublishers, 2004, ISBN 1-4020-7762-9中，特别是第I章（介绍）和第IV章（工艺技术）。
附图说明
在图中举例说明了本发明的主题。然而，附图并不意图以任何方式限制本发明或权利要求的范围。
在图1中，描述了条带1。
图2示出了具有界线8的条带1的截面图。在截面图中，示出了第一层2。第一层2邻近于中间层7，其邻近于涂层3。（虚拟）平行四边形R1包围条带1。条带1的中心24位于离平行四边形R1的左下角的a/2、b/2位置处。
图3描述了导线前体9的截面图。在截面图中，铜芯2'在截面图中间。铜芯2'被涂层3包围。铜芯的表面15'位于导线前体2'的界限上。在通过导线前体9的中心23的线L上，铜芯2'的直径被示为线L与表面15的交叉点之间的端至端距离。导线前体9的直径是通过中心23的线L与导线前体9的外界的交叉点之间的端到端距离。此外，描述了涂层3的厚度。
图4示出了根据本发明的工艺。
图5示出了根据本发明的另一工艺。
图6描述了包括两个元件11和条带1的电设备。条带1将两个元件11电连接。
图7描述了另一电设备10。四个元件11被三个条带1电连接。
图8描述了推进设备16，在这种情况下为汽车，其包括电设备10。
在图9中，示出了根据本发明的一块条带的截面图。
图10描述了条带1的放大。自下至上地示出了第一层2、接着是中间层7且在顶部上是涂层3的剖面。邻近于涂层3的在顶部上的黑色区域是背景且不是示例的一部分。
图11描述了应变单轴循环测试的例证图表。在x轴上用%示出延长度。在y轴上示出了应力[MPa]。从实验所得到的曲线是hysteresis环（loop）。用A标记的曲线是用根据本发明的条带记录的，曲线B是用由纯铝制成的参考条带记录的。如在测试方法中所述地确定Δεpl和Δw。
图12和图13示出了如针对图11所述的多次测量，收集用于图12中的图表中的耗散功和用于图13中的塑性应变的结果。用圆点标记的值是用根据本发明的条带记录的，用矩形点标记的值是用由纯铝制成的参考条带记录的。
图14示出了收集功率循环测试的结果的图表。在x轴上，示出了作为循环开始时和循环停止时的温度之间的差的ΔT。在y轴上示出了直至失败为止的循环数目。在此图表中，示出了用于由纯铝制成的样本条带的曲线（通过明亮矩形点的曲线拟合）。此外，示出了用于根据本发明的条带的曲线（通过暗矩形点的曲线拟合）。根据图表，到失败的循环数目对于本发明的条带而言是对于由纯铝制成的参考条带的至少三倍高。
图15示出了条带拉力测试的草图。在结合21中以45°的角19将条带1结合到基板20。拉钩17牵拉条带1。在拉钩17牵拉导线1时形成的角32是90℃。
测试方法
所有测试和测量是在T＝20℃和50 %的相对湿度下进行的。一般地，可以使用导线以类似方式来执行针对条带所述的所有测试。
电导率
测试样品（即长度为1.0米的条带）的两端被连接到提供I＝10 mA的恒定电流的功率源。用用于测量电压的设备来记录电压。用至少4个测试样品来重复此布置（set-up）。将四次测量结果的算术平均用于下面给出的计算。
根据R＝U/I来计算电阻R。
根据ρ = (R×A) / l来计算比电阻ρ，其中，A是导线的平均截面面积且l是用于测量电压的设备的两个测试点之间的导线的长度。
根据σ = 1 / ρ来计算比电导率σ。
层厚度
为了确定涂层的厚度、中间层的厚度和芯的直径，垂直于条带的最大延长来切割条带。仔细地研磨切口并进行抛光以避免软材料（例如Al）的涂抹。通过光学显微镜或扫描电子显微镜（SEM）来记录图片，其中，将放大选择成使得示出导线的整个截面。
重复此程序至少15次。将所有值提供为至少15个测量结果的算术平均。
楔-楔结合—参数定义（用于条带）
在20℃下执行条带到用AlSi1（从Heraeus/德国可获得）镀敷的CuSn6制成的基板上的结合，其中，将该结合应用于AlSi1表面。条带始终被楔结合在条带的侧面，其被涂覆铝涂层。如果条带使超过一个侧面被涂覆铝层，则在同一侧（即在同一铝层上）执行楔结合。始终在条带的平坦表面上对条带施加楔结合。在以条带与基板之间的45°角形成第一楔结合之后，用条带的第二端将其楔入到基板。条带的两端之间的结合的距离在从5至20 mm范围内。选择此距离被以便确保条带与基板之间的45°的角。在楔结合期间，将在60至120 kHz范围内的频率的超声应用于结合工具达90至500毫秒。针对要测试的所有条带应用相同的楔结合条件。
拉力测试（用于条带）
在XYZTEC Condor 150机器上根据MIL-STD-883G 方法 2011.7 (1989)、条件D来进行拉力测试。在与此标准的偏差中，使用在其镀铝平坦表面上被以45°角楔结合到镀有AlSi1（从Heraeus/德国可获得）的CuSn6制成的铝基板上的条带，其中，对AlSi1表面施加结合。条带的两端之间的结合的距离在从5至20 mm范围内。选择此距离以便确保条带与基板之间的45°的角。以2500µm/s的牵拉速度在环的中间牵拉环。所使用的拉钩是XYZTecTOR051200。
结合剪切力测试（用于条带）
在XYZTEC Condor 150机器上根据ACE-Q101-003 Rev-A（07.2005）来进行结合剪切力测试。在与此标准的偏差中，使用在其镀铝平坦表面上被以45°角楔结合到镀有AlSi1（从Heraeus/德国可获得）的CuSn6制成的铝基板上的条带，其中，对AlSi1表面施加结合。执行剪切力测试，剪切楔结合的宽边，即条带的末端。然后，以50µm/s的速度将剪切工具下降至基板以限定零高度。接下来，将剪切工具从基板的表面缩回35 µm。然后，以250µm/s的速率进行剪切。还记录结合剪切失败模式：（1）结合提升；（2）结合剪切；（3）磨顶槽；（4）结合表面提升（结合表面与其底层基板分离）。
应变和耗散功—单轴循环测试（用于条带）
笔直条带的样本被夹在机器中以施加机械应变（张紧和压缩）。被暴露于机械测试的条带的长度是1.0 mm。以1%/s的应变率执行样本的循环直至样本失败（导线的破损）。机器记录由样本传输的力。针对直至失败为止的循环数目（N）对塑性应变振幅（Δεpl）和耗散功（Δw）每个进行绘图。
Δεpl被定义为hysteresis环的增加和减小分支的零应力处的应变差。
Δw被定义为一个hysteresis环的积分。
功率循环测试
通过使用要测试条带将二极管EMCON 4高功率芯片（从德国慕尼黑INFINEON技术公司可获得）楔结合到底板来产生样本。如上所述，以适当的方式来选择楔结合参数，确保所有被结合条带在条带与底板之间示出相同的接触面积（Ac ref）。关于商售低板，选择在测试期间将保持管芯被附着（二极管）的底板。使用相同的底板来准备所有样本。
在由美国AZ85281的坦佩的Integrated Technology公司供应的ITC5230上进行功率循环测试。为了进行测试，将样本安装在冷却垫（pad）上，通过该冷却垫，在冷却垫的进口处使用具有温度20℃的流体以恒定流速率将样本永久地冷却。为了确保定义的热传递被样本耗散，在样本与冷却垫之间布置热传导膜。使ITC5230的电极接触二极管和底板。
在功率循环测试之前，评估预置电压（V0）和时间下的电流量（I0），这是实现样本从40℃的起始温度到175℃的温度的增加所必需的。此时间是循环的接通时间。在其之后，在不向样本施加电流的同时评估样本从175℃冷却至40℃的冷却时间。此时间是关断时间。一个接通时间、后面是一个关断时间的序列定义一个功率循环。
然后，通过连续地施加上述功率循环来执行功率循环测试。在预置电流I0下，记录在功率循环的接通时间期间的电压（Vt）。当接通时间段期间的电压Vt超过电压Vf时，功率循环测试结束。Vf = (V0 + 10 %)。
结合之后的电缺陷
针对电缺陷评估根据上述楔-楔结合工艺在相同条件下完成的一组250个样本。样本中的每个具有2个结合，其总计达500个结合。取决于缺陷的数目，在表2中用++、+、0、-或--来标记每个组。
++ = 0 %
+ = < 2 %
0 = 2 - 5 %
- = 5 - 10 %
-- = >10 %。
拉伸强度测试
根据DIN EN ISO 6892-1:2009、程序A、用以下参数在Zwick Z250测试机上进行此测试：初始计量长度L0＝100 mm；测试条件：温度＝20℃。直至Rp0.2为止，应变速率是1mm/分钟。在Rp0.2以外，以10mm/分钟的应变速率拉伸样本直至断裂为止。通过将最大力Fm除以样本的初始截面S0而获得拉伸强度。延长度等于ΔL/L0，其中，ΔL是计量长度的变化。
示例
用示例来进一步举例说明本发明。这些示例用于本发明的示例性阐明且并不意图以任何方式限制本发明或权利要求的范围。
示例1—4（来自被涂覆导线前体的条带）
使用3个拉伸模来将总直径1mm的导线延长，该导线具有115 µm的厚度的铝涂层和770 µm直径的铜芯，每个提供12%的延长度以获得700 µm的直径的导线。然后，对导线进行滚轧，导致获得期望厚度的条带。然后，在表1中详述的退火温度T下将条带在烘箱中退火达1小时。在退火之后，在24小时内将条带冷却至环境温度。在表1中收集了这些条带的性质。
示例5—8
如示例1—4那样准备条带。然而，铜芯具有840 µm的直径和80 µm的铝涂层。整个导线直径是1mm。
示例C1、C2
如示例1—4那样准备这些条带。然而，C1的铜芯具有220 µm的直径和390 µm的铝涂层。C2的铜芯具有975 µm的直径和12.5 µm的铝涂层。
示例9—16、C3、C4（来自片材的条带）
为了准备根据示例9—12的条带，将具有700 µm厚度的99.9%纯度的铜片与具有220 µm厚度的99.9%纯度的铝片组合，使得两个片材的边缘相互成一直线。为了获得条带前体，使组合片材经受滚轧。条带前体的厚度取决于施加于辊子的压力。然后，将条带前体切割成条带并在下面表2中所述的温度和退火速度下在0.9m长度的管式烘箱中进行退火，由此获得条带。然后，在24小时内将条带冷却至环境温度。相应地准备示例13—16。然而，铜片具有500 µm的厚度并且铝片具有220 µm的厚度。
表2提供概要。
参考数字
（1）条带
（2）第一层
（2'）铜芯
（2''）第一片材
（3）涂层
（3''）另一片材
（4）接触
（5）条带宽度
（5'）截面图中的通过导线前体的最长路径
（6）条带高度
（6'）截面图中的通过导线前体的最短路径
（7）中间层
（8）条带的边界线
（9）导线前体
（9'）条带前体
（10）电设备
（11）元件
（12）电子设备
（13）受控设备
（14）控制单元
（15）第一层的表面
（15'）铜芯的表面
（16）推进设备
（17）拉钩
（18）牵拉拉钩的方向
（19）条带与表面之间的角
（20）基板
（21）条带与基板之间的结合
（22）牵拉导线的拉钩下的条带角度
（23）导线中心
（24）条带的中心
（25）条带的边界线
（26）管式炉
（L）线
（R1）平行四边形。

Claims (25)

1.一种条带（1），包括：
a. 第一层（2），包括具有表面（15）的铜；以及
b. 叠加在所述第一层（2）的表面（15）上的至少一个涂层（3），其中，该涂层（3）包括铝，以及
c. 中间层（7），
其中，在所述条带（1）的截面图中，基于所述条带（1）的截面的总面积，所述第一层（2）的面积份额在从50至96%范围内，以及
其中，截面图中的所述条带（1）的宽度（5）和高度（6）之间的纵横比大于或等于0.03以及小于0.8，
其中，所述条带（1）具有在从25000 µm2至800000 µm2范围内的截面面积，
其中，所述中间层（7）被布置在所述第一层（2）与所述涂层（3）之间，其中，所述中间层（7）包括至少一个金属间相，其包括所述第一层（2）的材料和所述涂层（3）的材料。
2.根据权利要求1所述的条带（1），其中，基于所述条带（1）的截面的总面积，所述条带（1）的截面图处的所述中间层（7）的面积份额在从0.1至15 %范围内。
3.根据权利要求1或2的条带（1），其中，所述中间层（7）的厚度在从0.1至5µm范围内。
4.根据权利要求1至2中的任一项所述的条带（1），其中，基于所述条带（1）的截面的总面积，所述条带（1）的截面图处的所述涂层（3）的面积份额在从3.9至50%范围内。
5.根据权利要求1至2中的任一项所述的条带（1），其中，所述第一层（2）的厚度在从25至380µm范围内，在所述条带（1）的截面图处确定。
6.根据权利要求1至2中的任一项所述的条带（1），其中，所述涂层（3）的厚度在从10至70µm范围内，在所述条带（1）的截面图处确定。
7.根据权利要求1至2中的任一项所述的条带（1），其中，基于所述第一层（2）的总重量，所述第一层（2）包括按重量计至少95 %的至少99.9%纯度的铜。
8.根据权利要求1至2中的任一项所述的条带（1），其中，所述第一层中的铜的氧含量在从0.1至80 ppm范围内。
9.根据权利要求1至2中的任一项所述的条带（1），其中，基于所述涂层（3）的总量，所述涂层（3）包括按重量计至少80 %的99.9%纯度的铝。
10.根据权利要求1至2中的任一项所述的条带（1），其中，耗散功对于所述条带（1）而言是由纯Al制成的参考条带的耗散功的至少2倍高。
11.根据权利要求1至2中的任一项所述的条带（1），其中，单轴循环测试中的最大应变对于所述条带（1）而言是由纯Al制成的参考条带的最大应变的至少1.5倍高。
12.根据权利要求1至2中的任一项所述的条带（1），其中，功率循环寿命测试对于所述条带（1）而言是对于由纯Al制成的参考条带的至少3倍高。
13.根据权利要求1至2中的任一项所述的条带（1），其中，拉力对于所述条带（1）而言比对于由纯Al制成的参考条带高至少10%。
14.一种用于制造条带（1）的工艺，至少包括以下步骤：
a. 提供导线前体（9），其包括具有表面（15'）的铜芯（2'）和涂层（3），该涂层被叠加在铜芯（2'）的表面（15'）上，其中，所述涂层（3）包括铝，
其中，在所述导线前体（9）的截面图中，基于所述导线前体（9）的截面的总面积，所述铜芯（2')的面积份额在从50至90%的范围内，以及
其中，在截面图中通过所述导线前体（9）的最长路径（5'）与最短路径（6'）之间的纵横比大于0.8以及小于或等于1.0，其中在截面图中通过所述导线前体的最长路径是在所述截面图的平面内能够通过所述导线前体的截面敷设的最长弦，并且在截面图中通过所述导线前体的最短路径是在所述截面图的平面内垂直于所述最长路径的最长弦，
其中，所述导线前体（9）具有在从0.5至5mm范围内的直径，
b. 对所述导线前体（9）进行成形，其中，获得条带前体（9'），
c. 对成形的条带前体（9'）进行退火，其中，形成中间层（7），并且然后获得所述条带（1）。
15.根据权利要求14所述的工艺，其中，在从30分钟至5小时的时段内在从140℃至400℃范围内的温度下执行退火。
16.根据权利要求14所述的工艺，其中，在从150℃至600℃范围内的温度下在管式炉（26）中执行退火。
17.根据权利要求16所述的工艺，其中所述退火是以在从1至20米/分钟的范围内的拉伸速度在从150℃至600℃范围内的温度下在所述管式炉（26）中执行的。
18.一种条带（1），其能通过根据权利要求14至17中的任一项所述的工艺获得。
19.根据权利要求18所述的条带（1），其中，所述条带（1）的特征在于以下特征中的至少一个：
a. 耗散功对于所述条带（1）而言是由纯Al制成的参考条带的耗散功的至少2倍高；
b. 单轴循环测试中的最大应变对于所述条带（1）而言是由纯Al制成的参考条带的最大应变的至少1.5倍高；
c. 功率循环寿命测试对于所述条带而言是对于由纯Al制成的参考条带的至少3倍高；
d. 其中，所述条带（1）的拉力对于条带（1）而言比对于由纯Al制成的参考条带高至少10%，
e. 所述条带（1）的电导率比由纯Al制成的参考条带的电导率高出在从20%至55%范围内。
20.一种电设备（10），包括至少两个元件（11）和至少根据权利要求1至13或权利要求18和19中的任一项所述的条带（1）或至少根据如权利要求14至17中的任一项所述的工艺制造的条带（1），其中，所述条带（1）将两个元件（11）电连接。
21.权利要求20的电设备（10），其中，通过楔结合可获得所述电连接。
22.权利要求20或21中的任一项所述的电设备（10），其中，所述元件（11）中的至少一个是基板、集成电路、晶体管、二极管中的一个。
23.根据权利要求22所述的电设备（10），其中所述二极管是发光二极管或光电二极管。
24.一种推进设备（16），包括至少一个根据权利要求20至23中的任一项所述的电设备（10）。
25.一种用于制作电设备（10）的工艺，包括如下步骤
a. 提供至少两个元件（11）；
b. 通过根据权利要求1至13或权利要求18和19中的任一项的条带（1）或至少根据根据权利要求14至17中的任一项所述的工艺制造的条带（1）来连接两个元件（11），其中，通过楔结合来执行所述连接中的至少一个。
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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014223352A1 (de) * 2014-11-17 2016-05-19 Robert Bosch Gmbh Verbindungsanordnung mit einem mehrschichtigen Bondflachdraht
USD775407S1 (en) * 2015-02-27 2016-12-27 Star Headlight & Lantern Co., Inc. Optical lens for projecting light from LED light emitters
TWI735612B (zh) * 2017-07-06 2021-08-11 大陸商深圳市為什新材料科技有限公司 可攜帶電子裝置之殼體轉印散熱塗層結構

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006023167B3 (de) * 2006-05-17 2007-12-13 Infineon Technologies Ag Bonddraht, Herstellungsverfahren für einen Bonddraht und Wedge-Wedge-Drahtbondverfahren
CN101185991A (zh) * 2006-11-21 2008-05-28 株式会社日立制作所 接合材料、接合材料的制造方法及半导体装置
DE102010031993A1 (de) * 2010-07-22 2012-01-26 W.C. Heraeus Gmbh Kern-Mantel-Bändchendraht

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100717667B1 (ko) * 2000-09-18 2007-05-11 신닛뽄세이테쯔 카부시키카이샤 반도체용 본딩 와이어 및 그 제조 방법
US20040217488A1 (en) * 2003-05-02 2004-11-04 Luechinger Christoph B. Ribbon bonding
US8022558B2 (en) * 2009-02-13 2011-09-20 Infineon Technologies Ag Semiconductor package with ribbon with metal layers
CN201417630Y (zh) * 2009-06-17 2010-03-03 上海松发合金材料有限公司 一种铜铝单双面冷复合板带
JP2011192840A (ja) * 2010-03-15 2011-09-29 Tanaka Electronics Ind Co Ltd 半導体素子用平角状アルミニウム被覆銅リボン
US9266188B2 (en) * 2010-06-08 2016-02-23 Neomax Materials Co., Ltd. Aluminum copper clad material
DK2662891T3 (da) * 2012-05-07 2020-07-13 Heraeus Deutschland Gmbh & Co Kg Fremgangsmåde til fremstilling af en aluminiumsovertrukket kobberbindingsledning
DK2662890T3 (da) * 2012-05-07 2019-08-26 Heraeus Deutschland Gmbh & Co Kg Fremgangsmåde til fremstilling af en aluminiumbelagt kobberbindingstråd

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006023167B3 (de) * 2006-05-17 2007-12-13 Infineon Technologies Ag Bonddraht, Herstellungsverfahren für einen Bonddraht und Wedge-Wedge-Drahtbondverfahren
CN101185991A (zh) * 2006-11-21 2008-05-28 株式会社日立制作所 接合材料、接合材料的制造方法及半导体装置
DE102010031993A1 (de) * 2010-07-22 2012-01-26 W.C. Heraeus Gmbh Kern-Mantel-Bändchendraht

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EP2662889A1 (en) 2013-11-13
PH12014502389A1 (en) 2014-12-22
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US9214444B2 (en) 2015-12-15
US20150137390A1 (en) 2015-05-21

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