CN1042830C - 用稻谷壳制取石墨碳化硅涂层及β-SiC细粉和β-SiC晶须的方法 - Google Patents

用稻谷壳制取石墨碳化硅涂层及β-SiC细粉和β-SiC晶须的方法 Download PDF

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CN1042830C
CN1042830C CN92111736A CN92111736A CN1042830C CN 1042830 C CN1042830 C CN 1042830C CN 92111736 A CN92111736 A CN 92111736A CN 92111736 A CN92111736 A CN 92111736A CN 1042830 C CN1042830 C CN 1042830C
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徐振民
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    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
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    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/5053Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials non-oxide ceramics
    • C04B41/5057Carbides
    • C04B41/5059Silicon carbide

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Abstract

用稻谷壳制取石墨碳化硅涂层及碳硅化合物,是将稻壳焦化处理,球磨,按一定的重量比加入催化剂,混合均匀后,放入装有需要SiC涂层的石墨坯件的石墨筒中,并置于高温炭管炉保温区进行高温烧结,制得石墨SiC涂层,βSiC粉和βSiC晶须。本法所使用的稻壳资源丰富,且价格低廉,工艺流程简单可行,质量达国家标准,不需要后处理工序,具有广泛的经济价值和综合利用价值。

Description

用稻谷壳制取石墨碳化硅涂层及β-SiC细粉和β-SiC晶须的方法
本发明属于化学冶金领域。
中国专利92107329利用稻壳、稻秆制SiC的方法,主要是利用废弃的稻壳稻秆,经压制干馏及隔绝空气反应制成粗晶SiC,通入空气烧除过量碳。沈阳有色金属研究所在《材料科学进晨》1989年第二期上发表了有关用稻壳制SiC晶须的文章。稻壳焦化后,按照SiO2/C=1∶2,加硼酸或硫酸亚铁,制成SiC晶须和残余碳混合物,通空气烧除碳后,得到βSiC晶须,但残余碳烧不干净。
本发明的目的是提供一种用稻壳制取石墨涂层,同时产生βSiC晶须、βSiC细粉的技术。
本发明采用稻壳为原料,将稻壳焦化处理,也就是干馏处理,或利用稻壳发电厂烧过的焦稻壳。对于稻壳焦化处理温度为600~650℃,时间1~1.5小时,温度不得超过700℃,以防稻壳焦化后,使其中的SiO2晶粒变粗,影响晶须生长。将焦化处理后得到的焦稻壳放入滚动式球磨机球磨,使焦稻壳破碎至粒度为0.115mm。加入NaCl等催化剂,其主要作用是在高温时与焦稻壳中的Si反应生成SiCl4,不受晶粒变粗的影响,因而可使用稻壳发电厂残灰。为提高晶须生长率,还可添加HBO3、FeSO4和Na2S等。加入一种催化剂,其量为焦稻壳总量的5~10%,如加入多种,总量则不超过焦稻壳总量的15%。根据化学反应式 ,混料时要保持混合料中SiO2/C的重量比为60∶32~60∶35。用稻壳发电厂残灰,其配比可用含不同的SiO2/C比所得的两种料相互搭配后得到,不需另外配冶金碳黑。将上述配有催化剂的料混匀后装舟,把需要SiC涂层的石墨坯件埋入石墨舟中,使焦稻壳混合料完全盖住石墨坯件,并适当压紧,以便和要涂层的石墨坯件保持良好的接触,并使各部分的温度保持均匀。若需获得更多的βSiC晶须,则石墨筒(或石墨舟)在装入焦化稻壳粉后需留有一部分空隙。然后用石墨盖板将石墨舟封闭,把料舟放入高温炉中进行反应。如果只要求烧石墨SiC涂层和βSiC细粉,则可采用连续推舟的高温卧式炉,温度易于控制,通入氢气保护进行烧制,温度控制在1650℃左右。若要同时获得石墨SiC涂层、βSiC细粉和βSiC品须,最好采用竖式炉或高温石墨化窑炉。因为反应料在生成SiC的过程中,重量减少60%左右,反应料体积减少50%左右,所以随着反应的进行,会逐步形成反应料上部空隙,上部空隙温度保持在1400~1450℃较好,下部反应料的温度保持在1600~1700℃,保温时间4~6小时。如果要烧制不同厚度SiC涂层,可多次将石墨SiC涂层制品用上述方法重复烧多次,SiC涂层超过2mm以上也不脱落,结合极为牢固,且不影响石墨制品的原始尺寸。可根据用户要求控制SiC涂层所需要的厚度。
本发明所使用的稻壳原料资源丰富,且价格低廉,若利用稻壳发电厂烧过的焦化稻壳,更能充分利用资源,变废为宝。本发明工艺流程简单可行,掌握好SiO2与C的配比,加入适量的催化剂,经高温烧结就能同时得到石墨制品SiC涂层,βSiC细粉和βSiC晶须。βSiC粉的质量达到α-SiC国家标准GB-2480-83,不需要后处理工序。具有广泛的经济效益和综合利用价值。
附图说明:
附图1为烧制石墨SiC涂层、βSiC粉和βSiC晶须的竖式炉示意图,其中:1为焦化稻壳配料(未烧成SiC前);2为炉壳;3为隔热材料;4为加热元件;5为耐火炉管;6为焦炭保温填料;7为βSiC晶须;8为βSiC粉;9为需涂层的石墨坯件;10为石墨筒(舟);11为隔热垫。
附图2为烧制石墨SiC涂层、βSiC粉和βSiC晶须的立式窑炉装窑示意图,其中:12为固定电极炉墙;13为导电石墨电极棒;14为焦炭粒;6为焦炭、石英砂保温填料;10为石墨烧舟;1为焦化稻壳配料;9为需涂层的石墨坯件,19为导线。
附图3为附图2的俯视图,其中20为窑炉边墙;6为焦碳、石英砂保温料。
也可利用石墨化窑炉的保温层放置石墨舟进行烧制。将装有石墨坯件及混有催化剂的焦化稻壳粉的石墨舟成数排置于石墨电极坯上部保温区,尔后再铺盖保温料(由焦炭颗粒和石英砂混合而成)进行烧结,此法利用石墨化窑炉的余热,勿需额外多供电。
实施例1,将焦化稻壳磨碎至0.115毫米,然后添加重量比为10%的NaCl和重量比为5%的HBO3作为混合催化剂,控制C/SiO2=33/60,混合均匀。将尺寸为φ85×560mm的石墨棒放入尺寸为φ115×8.5×600mm的烧舟中,周围用混有催化剂的焦化稻壳混合料在试样周围塞填装满,放入高温炭管炉中进行高温反应。在高温炭管炉中1600~1700℃的高温区保温6小时,出舟后,石墨棒上生成0.5毫米左右厚度的SiC涂层,其余料为βSiC细粉,空隙部分为白色βSiC晶须。装入焦化稻壳混合料600克左右,除涂层外,还可获得βSiC粉250克左右,粉纯度为94.4%,游离碳为0.45%,平均粒度10μm,干磨16小时,粒度达到1.5~2μm。
实施例2,焦化稻壳处理与例1同,C/SiO2为34/60,添加重量比为5%的NaCl,重量比为5%的Na2S和重量比为5%的FeSO4,混合均匀,将尺寸为φ25×10mm和φ10×15mm的石墨试样装入尺寸为φ70×6×320mm的石墨舟中,周围松装配有催化剂的焦化稻壳,装舟至3/4长度,留1/4空隙。将装有料的舟置于φ80×1080mm的高温炭管卧式炉中,舟的空隙一端先置于1600℃高温区,按每2小时推1/2舟的速度推进,连续送舟至冷却水套半小时后出舟。必须使反应料放置在高温区,空隙部分的温度低150℃左右,成晶须效果较好。出舟后,空隙部分长满白色βSiC晶须,晶须后面为βSiC细粉,βSiC粉纯度重量比为94.7%,游离碳<0.3%。其中石墨试样均涂上0.3mm左右的βSiC涂层。对生成βSiC晶须采用的竖式高温炉效果更好。如利用图2和图3石墨化窑炉是推广工业化生产较适用的设备,温度稍高,为1700~1800℃。

Claims (2)

1.用稻谷壳制取石墨碳化硅涂层及βSiC细粉和βSiC晶须的方法,是将稻壳焦化处理,再把焦化稻壳磨碎成细粉,或将稻壳发电后残灰处理后,加入催化剂并混合均匀,加热混合料,其特征在于:所加的催化剂为5~10wt%的NaCl,混合料中SiO2/C的重量比为60∶32~60∶35,混合料装在有石墨坯件的石墨筒内,完全盖住石墨坯件,把石墨筒放在高温炉中,通入氢气保护进行烧制,下部反应料温度控制在1600~1700℃,上部空隙温度保持在1400~1450℃,保温时间4~6小时。
2.根据权利要求1所述的方法,其特征在于:所述的催化剂为NaCl再加FeSO4、HBO3和Na2S的一种或多种时,催化剂总量不超过焦稻壳总量的15%。
CN92111736A 1992-11-27 1992-11-27 用稻谷壳制取石墨碳化硅涂层及β-SiC细粉和β-SiC晶须的方法 Expired - Fee Related CN1042830C (zh)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1294297C (zh) * 2005-05-24 2007-01-10 西北工业大学 制备碳化硅晶须的方法

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CN100348547C (zh) * 2005-12-26 2007-11-14 西北工业大学 在碳/碳复合材料表面制备碳化硅涂层的方法
CN100369863C (zh) * 2006-03-30 2008-02-20 中国科学院山西煤炭化学研究所 一种生物结构球形多孔碳化硅陶瓷材料的制备方法
CN101864619A (zh) * 2010-06-18 2010-10-20 吉林大学 利用稻壳制备微纳米直径碳化硅短纤维和晶须的方法
CN106282927A (zh) * 2016-08-05 2017-01-04 宁波高新区斯汀环保科技有限公司 一种钼改性碳化硅/铜复合电子封装材料的制备方法
CN106800420B (zh) * 2016-12-30 2021-07-16 河南工业大学 一种碳化硅晶须原位复合刚玉高温陶瓷材料及其制备方法

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US4248844A (en) * 1980-01-28 1981-02-03 Great Lakes Carbon Corporation Production of SiC from rice hulls and silica
US4283375A (en) * 1980-01-28 1981-08-11 Great Lakes Carbon Corporation Production of SiC whiskers
JPS57209813A (en) * 1981-06-18 1982-12-23 Tokai Carbon Co Ltd Preparation of silicon carbide whisker
JPS61295272A (ja) * 1985-06-20 1986-12-26 工業技術院長 高気孔率を有する炭化けい素成形体の製造方法
CN1064062A (zh) * 1992-03-20 1992-09-02 徐以达 以稻壳、稻秆为原料制碳化硅的方法

Patent Citations (5)

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Publication number Priority date Publication date Assignee Title
US4248844A (en) * 1980-01-28 1981-02-03 Great Lakes Carbon Corporation Production of SiC from rice hulls and silica
US4283375A (en) * 1980-01-28 1981-08-11 Great Lakes Carbon Corporation Production of SiC whiskers
JPS57209813A (en) * 1981-06-18 1982-12-23 Tokai Carbon Co Ltd Preparation of silicon carbide whisker
JPS61295272A (ja) * 1985-06-20 1986-12-26 工業技術院長 高気孔率を有する炭化けい素成形体の製造方法
CN1064062A (zh) * 1992-03-20 1992-09-02 徐以达 以稻壳、稻秆为原料制碳化硅的方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1294297C (zh) * 2005-05-24 2007-01-10 西北工业大学 制备碳化硅晶须的方法

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