CN104282802B - A kind of solaode module of how sub-battery series connection and preparation method thereof - Google Patents

A kind of solaode module of how sub-battery series connection and preparation method thereof Download PDF

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CN104282802B
CN104282802B CN201310449370.9A CN201310449370A CN104282802B CN 104282802 B CN104282802 B CN 104282802B CN 201310449370 A CN201310449370 A CN 201310449370A CN 104282802 B CN104282802 B CN 104282802B
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sub
battery
layer
module
scribing
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CN104282802A (en
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邢丽芬
李兆廷
何珊
王亮
李岩
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Chengdu Zhongpu Technology Co ltd
Dongxu Science And Technology Development Co ltd
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CHENGDU XUSHUANG SOLAR TECHNOLOGY Co Ltd
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
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    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
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Abstract

A kind of solaode module of how sub-battery series connection and preparation method thereof, solve that sub-number of batteries is limited and the limited technical problem of output voltage obtained by series connection, the technical scheme is that described method realizes on the basis of solaode module preparation technology, described method step is included on base plate glass deposition conductive membrane layer scribing, depositing photovoltaic absorbed layer scribing, deposition dorsum electrode layer scribing form sub-series battery modules, the delineation mode of described conductive membrane layer is: score line is cut along lateral orientation and longitudinal azimuth crossings of base plate glass, conductive membrane layer after cleaved forms, by lateral trench and longitudinal groove, the separate conductive module being arranged in order, and the separate conductive module of adjacent two row terminations is end to end, form the front electrodes conduct bar that " snakelike " arranges；The delineation of described photovoltaic absorption layer and dorsum electrode layer carries out scribing according to the shape of front electrodes conduct bar, forms the sub-battery modules that " snakelike " connects respectively.

Description

A kind of solaode module of how sub-battery series connection and preparation method thereof
Technical field
The present invention relates to a kind of solaode module preparation technology, belong to thin-film solar cells and manufacture field, solaode module of a kind of how sub-battery series connection and preparation method thereof.
Background technology
Along with making constant progress of the mankind, energy resource consumption is increasing, and traditional energy is constantly consumed rapidly.Solar energy is renewable cleaning new energy, and reserves are huge, from the point of view of for a long time, most possibly substitutes traditional energy.And when utilizing solar cell power generation, the voltage of monoblock battery is difficult to do greatly, output electric current is relatively big, and the heat producing losses of battery itself and transfer wire is relatively big, and substantial amounts of energy consumes among transmitting；And when being connected into photovoltaic array and generating electricity, the hot spot effect of sporadic percentage of batteries sheet, inevitably result in the situations such as adverse current heating, affect the generating aggregate efficiency of battery.
Illustrating making the technological process of non-crystal silicon thin-film solar cell component now, processing step is as follows:
TCO base plate glass feeding------------P4 scribing sweeps limit, and--cleaning 3--ultra-sonic welded draws/convergent belt, and----------pack and put in storage autoclave P3 laser scribe dorsum electrode layer Sputter sputter back electrode P2 laser scribe P-I-N layer in deburring in roll-in for overlapping PVB and back of the body glass to clean 2--PECVD deposition P-I-N layer to clean 1--P1 laser scribe tco layer by bonding rosette--emulation testing--.
According to above-mentioned technological process, it is known that without " drainage strip " and the impact of " busbar ", the sub-cell shapes of hull cell and being connected with each other, is determined with the path of laser scribe P1, P2 and P3 and mutual alignment relation.
It is used most laser scribe methods at present, sub-battery can be made to be together in series in the length of cell panel or width one by one (see figure 1) with " long fillet " shape；Owing to the length and width of cell panel are limited, sub-battery can not be made " too narrow " again, and the factor such as the width dimensions of laser scribing itself, positional precision limits the increase of sub-number of batteries, thus limits the output voltage size of thin-film solar cells.
Summary of the invention
The technical problem to be solved in the present invention is: existing solaode module is limited, by internal " sub-battery " attachment structure, the sub-battery block the most originally connected with " long fillet " shape, even if connecting one by one along " narrow limit " on series connection direction, also can be by overall length, fillet can not be too narrow, the restriction of the factors such as the width of laser scoring own and scribing positional precision causes the sub-number of batteries that can include series connection in limited and the limited technical problem of output voltage obtained by series connection, devise solaode module of a kind of how sub-battery series connection and preparation method thereof, by changing existing solaode module delineation mode, solve and solaode module can seal in sub-battery and voltage is limited, and the technical problem that hot spot effect can not be effectively controlled.
The present invention is to realize goal of the invention to the technical scheme is that the method improving solaode module series voltage and effectively reducing hot spot effect, described method realizes on the basis of solaode module preparation technology, described method step is included on base plate glass deposition conductive membrane layer scribing, depositing photovoltaic absorbed layer scribing, deposition dorsum electrode layer scribing form sub-series battery modules, it it is critical only that: the delineation mode of described conductive membrane layer is: score line is cut along lateral orientation and longitudinal azimuth crossings of base plate glass, conductive membrane layer after cleaved forms, by lateral trench and longitudinal groove, the separate conductive module being arranged in order, and the separate conductive module of adjacent two row terminations is end to end, form the front electrodes conduct bar that " snakelike " arranges；The delineation of described photovoltaic absorption layer and dorsum electrode layer carries out scribing according to the shape of front electrodes conduct bar, forms the sub-battery modules that " snakelike " connects respectively.
The key idea of the present invention is: the invention provides a kind of thinking, refers mainly to so that solaode is in limited area, be divided into more sub-battery, and make its effective arranged in series, thus obtain twice, three times of output voltages the most higher；Under this high voltage, the electrical property advantage that high voltage just has can be realized with comparalive ease；In the case of the thin film solar cell sheet of limited areal needs to export higher voltage, it is recommended that use；When being applied to cell power generation array, an equal amount of voltage to be produced, can obtain with the series connection of lesser amount of cell piece, and simultaneously in order to obtain certain power, can select to organize parallel connection more；Cell piece output voltage is high, and the magnitude of current flowing through battery is little, and the caloric value of such transmission line of electricity also can be little.
Utilizing the present invention, if not increasing the making of high conductivity silver/aluminum thin layer before P1 scribing, it is possible to complete the making of thin-film solar cells CELL section on existing equipment and Process ba-sis, increasing equipment or raw material substantially without extra；The mode recommended is to increase a high conductivity silver/aluminum thin layer, and the equipment of required increase and raw material are also few, can complete with little cost.
The present invention, in production technology, need to set up welding bypass diode and lead-out wire operation, but eliminate the welding of busbar and drainage strip, and technique tends to simplifying；Diode can be included in circuit for greater flexibility, its number, specification choose must be according to the concrete parameter attribute value of cell piece depending on；Being connected into of diode can make monoblock battery have special performance, can preferably resist the problems such as hot spot effect.
When being applied to cell power generation array, an equal amount of voltage to be produced, can obtain with the series connection of lesser amount of cell piece, need polylith series connection just can obtain high voltage compared to conventional voltage cell piece and there is the advantage of attachment structure；During the unusual conditions such as the photovoltaic array of the pure parallel connection of cell piece part cell piece generation hot spot effect wherein; total peak output voltage will not change; and can protect, by sealing in the diode of outfan, the situation that the heating of whole electricity generation system impossible back current, system effectiveness significantly decay；And the output electric current of photovoltaic array can be controlled conveniently by increase and decrease parallel-connected blocks/group number；And simultaneously in order to obtain certain power, cell parallel can be selected flexibly.
The present invention is in thin-film solar cells and photovoltaic power generation array field, all devise a new form, in the variation of battery, the lifting of photovoltaic array circuit optimization, generating voltage reliability, power transmission line thermal losses, the aspect such as lifting of generated energy service efficiency, all there is its special advantage.
The present invention is described in detail below in conjunction with the accompanying drawings.
Accompanying drawing explanation
Fig. 1 is existing solaode modular structure.
Fig. 2 is structural representation (sticking on high conductivity silver/aluminum thin layer) after conductive membrane layer scribing in the present invention.
Fig. 3 is structural representation after photovoltaic absorption layer scribing in the present invention.
Fig. 4 is the structural representation of the sub-series battery modules formed after dorsum electrode layer scribing in the present invention.
Fig. 5 is the equivalent circuit diagram after setting up bypass diode in the sub-series battery modules in Fig. 4.
In accompanying drawing, 1 is base plate glass, 2 is conductive membrane layer, the 21 separate conductive modules representing adjacent two row terminations, 3 is photovoltaic absorption layer, and 4 is dorsum electrode layer, 5 is the sub-battery of adjacent two row terminations, D1, D2 represent bypass diode, and in Fig. 3, dotted line represents P2 laser scribe off center baseline, and in Fig. 4, arrow represents the current trend of solaode module.
Detailed description of the invention
Improve solaode module series voltage and the method effectively reducing hot spot effect, described method realizes on the basis of solaode module preparation technology, described method step is included on base plate glass 1 deposition conductive membrane layer 2 scribing, depositing photovoltaic absorbed layer 3 scribing, deposition dorsum electrode layer 4 scribing form sub-series battery modules, it it is critical only that: the delineation mode of described conductive membrane layer 2 is: score line is cut along lateral orientation and longitudinal azimuth crossings of base plate glass 1, conductive membrane layer 2 after cleaved forms the separate conductive module being arranged in order by lateral trench P11 and longitudinal groove P12, and the separate conductive module 21 of adjacent two row terminations is end to end, form the front electrodes conduct bar that " snakelike " arranges；The delineation of described photovoltaic absorption layer 3 and dorsum electrode layer 4 carries out scribing according to the shape of front electrodes conduct bar, forms the sub-battery modules that " snakelike " connects respectively.
The connected mode that the separate conductive module 21 of described adjacent two row terminations is end to end includes: the body of two pieces of separate conductive modules is in one-piece connection or connects by conductive material.
The separate conductive module 21 of adjacent two row terminations is set up high conductivity silver/copper/aluminum thin layer, the conductivity of described silver/copper/aluminum thin layer respectively: silver is 0.0159(Ω mm2/ m), copper be 0.0167(Ω mm2/ m), aluminum be 0.02635(Ω mm2/ m).
A kind of solaode module of how sub-battery series connection, structure sheaf includes base plate glass 1, conductive membrane layer 2, photovoltaic absorption layer 3, dorsum electrode layer 4, it it is critical only that: the structure of described solaode module includes at least two row's sub-series batteries, the conductive membrane layer 2 of the sub-battery 5 of adjacent two row terminations joins end to end, and forms " snakelike " sub-series battery modules.
Sub-cell shapes in described solaode module is rectangle or square or triangle or hexagon.
Be equipped with high conductivity silver/copper/aluminum thin layer between conductive membrane layer 2 and the photovoltaic absorption layer of the sub-battery 5 of described adjacent two row terminations, the conductivity of described silver/copper/aluminum thin layer respectively: silver is 0.0159(Ω mm2/ m), copper be 0.0167(Ω mm2/ m), aluminum be 0.02635(Ω mm2/ m).
Bypass diode D1, D2 is set up between the circuit of the sub-series battery more than interval adjacent row or a row.
The present invention is to manufacture field in thin-film solar cells, by the planning again of laser scribing process and design, processing the thin-film solar cells of a kind of novel sub-battery arrangement structure.The purpose of this arrangement architecture is to build to have the thin-film solar cell panel that more sub-battery is connected in series: such as, on hull cell plate, all sub-batteries can get up by certain paths in series；Or part parallel connection in groups according to certain rules is together in series the most by group；Sub-number of battery cells is the most, and the radix being available for being connected in series is the biggest.The feature of this new structure battery is: output voltage is high, output electric current is little；Recommend to use in the case of the cell piece of limited areal needs to export higher voltage；When being applied to cell power generation array, required high voltage can be obtained with less cell piece series connection, there is compared to conventional batteries sheet the advantage of attachment structure；Electric current is little, and the caloric value of transmission line of electricity also can be less.
The present invention, is the thin-film solar cells designing a kind of novel sub-battery arrangement structure；By this design, for the thin film solar cell sheet of same area, " sub-battery " or " sub-set of cells " series connection of greater number can be realized；This series connection, is not only original series connection on battery panel " length " direction, and can add up to add series connection on cell panel " width " direction.
The redesign of laser scribing process in the present invention is not unalterable or require harsh scribing track, but can have a variety of track, pattern；As long as " circuit cooperation " can be realized for tco layer, battery layers and dorsum electrode layer in technical process, the series connection of the number to a greater extent of the variously-shaped sub-battery of this thin-film solar cells or sub-set of cells just can be realized.In view of the multiformity of above-mentioned scribing track, this patent only describes " square " sub-battery in detail and connects an example at this；Can be extended out, the sub-cell shapes of other series connection shape can be equilateral triangle, regular hexagon etc., provides reference at this.
In the present invention, how sub-battery cascaded structure can be suitable for for the solaode of nearly all " thin film " structure；It is applicable not only to the single-unit thin-film solar cells such as " non-crystalline silicon ", " microcrystal silicon ", " cadmium telluride ", and is applicable to double-junction solar batteries, even film composite type multi-knot thin film solaode such as " amorphous-crystallite " " amorphous germanium silicon "；If the corresponding relationship consistency of front electrode, back electrode and battery layers, it is possible to be applicable to the application of how sub-battery series connection.
For above-described novel thin film solar battery structure, in order to obtain more satisfactory electrical property and efficiency, it is to avoid not mating in some performance occurred because of structural change, design parameter and technological parameter should have corresponding matched design；For difform sub-battery series connection new structure, the structural parameters matched have certain difference；It is the least that general principle is desirable to internal resistance, and certain ad hoc structure may not be suitable for other structure, it is impossible to lumps together.
If by the composition photovoltaic array generating of novel thin film solar battery sheet, then in parameters is mated, it should be also required for corresponding matching primitives to the diode of thin-film solar cells configuration.This patent proposes to mate theory as follows: if the output voltage of system requirements needs the battery in array " to connect " just and can obtain, then can consider to carry out the access of bypass diode；If novel battery sheet output voltage is relatively big, the output voltage of system requirements i.e. can be met under the connection of pure parallel connection, then can cancel bypass diode, and Diode series enters output circuit, also can play the effect of protection system.
Due to the fact that its technique particularity, can save busbar and drainage strip, corresponding operation can be conserved；And the operation of required design alteration is welding bypass diode and lead-out wire.
As other thin-film solar cells, this square circuit design, subregion also will be had " should not to be used for generating electricity ", and this region will be precisely the bottleneck place that inside battery " conducts electricity "；Stick on high connductivity film or local to add plating/deposition high connductivity layer be prioritization scheme at this.
In order to solve problem above, creatively design the brand-new performance parameter of thin-film solar cells, this patent proposes a kind of new sub-battery connecting construction specially, i.e. by this attachment structure, thin film solar cell sheet for same area, energy scribing is partitioned into the sub-battery of greater number, and makes these " sub-batteries " or " sub-set of cells " to realize series connection；Such a series of effect is to allow thin-film solar cells obtain bigger output voltage values.
In order to realize the arrangement architecture of this novel sub-battery, we are on the basis of current mature thin-film solar cells production technology, need to redesign the techniques such as the layout of tri-laser scribe of laser scribe P1, P2 and P3, path, line style parameter, and along with the change of cell panel inner connecting structure needs to cancel drainage strip and busbar and technique thereof, increase diode and the welding procedure of lead-out wire, so that new structure is achieved.And, the most also for we provide a thinking: as long as the process datas such as the layout of three laser scribe, path, line style parameter, mutual alignment relation can be in the geometry of the front electrode of hull cell, back electrode and intermediate cell layer, play the association cooperated, so thin-film solar cells just can have a variety of cutting method, the pattern of the different shape of many types can be cut out, such as equilateral triangle, regular hexagon etc..
Recommend the optimization technique selected: on the tco layer of non-power generation area, stick on/add plating/deposition high connductivity thin layer.Novel attachment structure has certain not enough, and the particularity connected due to circuit, the most each piece of sub-battery has all been connected in circuit, and some specific region cannot participate in generating；It is not used to the region of generating at several places of this new structural design, sticks on, add plating or the metal film layer of deposition high conductivity, can effectively help improve the bottleneck problem that tco layer conductive capability that this design structure must solve is limited.
Finally, change due to FEOL, the module set section technique being adapted to this new internal attachment structure necessarily occurs to change accordingly: cancel busbar and drainage strip, rosette is no longer necessary configuration, then can access technique by the welding of welding access technique and outfan lead-in wire that design parameter sets up diode.
The present invention, a variety of shape can be had can to realize cooperation series connection between layers, again due to the not equal factor of variously-shaped sub-battery, trend, detailed laser scribing process processing procedure is difficult to the most all be described to, and the most only selects the thin-film solar cells of the most representational " short fillet is square " sub-battery to introduce.
First, referring to Fig. 4, the new thin-film electro pond battery connecting construction model proposed: be no longer " the unidirectional series connection " of the sub-battery of " long fillet " shape cutting in Fig. 1 prior art, but each sub-battery of block length fillet direction along its length is equidistantly cut open, to obtain more less " sub-battery ".For the ease of analyzing, we give the sub-battery numbering that these are less, compile 1,2,3 the most successively ... N, N are one sub-battery of rightmost, add subscript 1,2,3 to it the most successively ... M, and i.e. " NM " is the most top-right sub-battery；Owing to this design should be based on the on all four premise of size of every sub-battery, we can be simply considered that, the sub-battery of a block length fillet " N " becomes " in parallel " of several " short fillet " sub-batteries " N1, N2 ... NM " after dicing；Then the sub-set of cells of these " in parallel ", then along with " 1,2 ... N " connect from left to right；Owing to 35 ~ 80 μm, a width the least can be simply excised in these equidistant cuttings, the loss of battery itself is little, is substantially negligible, and it does not varies widely on electrical property with initial cell panel.Change " even number line " sub-battery trend so that its cascading effect be electric current from right to left；And the conductive membrane layer 2 making one piece of sub-cell area of rightmost of " odd-numbered line " to " even number line " connects (the most scribing is not broken)；The conductive membrane layer 2 making one piece of sub-cell area of Far Left of " even number line " to " odd-numbered line " connects；So changing, the electrical connection of sub-battery has just become " 11 → 21 →... ... → N1 → N2 →... ... 22 → 12 → 13 → 23 ... → NM ".With simple mathematical analysis, all of " the sub-battery of short fillet " to be made all to be sealed in: make M take odd number, then the sub-battery that last block is sealed in is NM；And making M take even number, then the sub-battery that last block is sealed in is 1M；The reason so distinguished is, can arrange the position of the electric current lead-out wire of battery more easily.
On this basis, the concrete technology step of the present invention includes:
A. Fig. 2 is seen, base plate glass 1 deposits conductive membrane layer 2 and carries out P1 scribing: P1 scribing i.e. starts to introduce the cutting of lateral orientation, the cutting in longitudinal orientation is continuous and runs through whole, and reservation " locally " is not scratched by the cutting of lateral orientation, this local will be novel sub-battery connecting construction " tie "；Through P1 scribing, conductive membrane layer 2 has been partitioned into the separate conductive module region of N × M；But " N1, N2 " " 21,31 " ... between sub-battery not scratch, allow electric current here turn to；For sticking on/add the high connductivity thin layer of plating/deposition, if this layer itself is as drainage strip, strip and continuous print, it is also required to be opened by scribing in P1 scribing, becomes the partial structurtes as conductive membrane layer 2 connection status；Why thinking that it should be cut when P1 scribing to open, being because the laser used by P1 scribing is HONGGUANG, and conductive membrane layer 2 is had reasonable cutting effect, for the high connductivity layer similar with conductive membrane layer 2 composition, ought to be also suitable for undertaking cutting task；If not, high connductivity layer just need " mechanical type " scribing cutting come, or be initially " one section one section " stick on；
B. seeing Fig. 3, depositing photovoltaic absorbed layer 2 also carries out P2 scribing: the circuit of P2 scribing is more complicated, needs the parameter set also can compare many, and its basic principle is: attend by the both sides of P1, and away from P1 line short distance skew, local becomes section scribing；In the sub-cell row of odd number, offset on the right side of P1, in the sub-cell row of even number, offset on the left of P1；After P2 laterally offset, scribing section the whole story position we be defined as " P2 off center baseline ", dorsum electrode layer and battery layers will be scratched in the lump by follow-up P3 along center baseline；Through P2 scribing, battery layers leaves a section discontinuous indentation；
C. seeing Fig. 4, deposition dorsum electrode layer 4 also carries out P3 scribing；P3 scribing is a ring the most complicated, act on battery layers and dorsum electrode layer, not only need on the basis of P2 narrow spacing once again liftoff to the left/right avertence moves, discontinuous piecewise cuts out " partition " between sub-battery, and needs to scratch completely between cell row and row laterally along " P2 off center baseline "；Owing to its cutting path is similar with P2, just Fig. 4 is completed what figure was drawn as total effect at this, by just can find out its principle with comparalive ease with the correlation comparison of Fig. 3.
Owing to the circuit structure of battery has a very large change, follow-up change is to comply with this change, improves structure and the processing technique designing whole battery.See Fig. 4, owing to the number of N and M can give flexible arrangement by design, then be no need for the design according to original straight line is connected and remove collected current from " two ends " of cell panel, and can be collected from local, it might even be possible to " segmentation " collected current；So, it is only necessary at the sub-battery location of welding exit, be perpendicular to current trend, lead-out wire " spread out " along sub-cell widths direction and is welded on back electrode；So, just without drainage strip and busbar and processing technique thereof, rosette is the most no longer necessary assembly；That is, welding lead-out wire can substitute drainage strip effect, can the most effectively collect and extracted current.
As this cascaded structure designs, the diode shielded, it is also possible to mate according to the unit for electrical property parameters of battery itself, the specification of diode itself and the sub-number of battery cells sealed in；The parameter assuming the amorphous silicon thin-film solar cell that one piece of maturation process designed is: Vmpp=100V, Impp=1A, sub-number of battery cells is 150, and configuring a nominal current is the bypass diode of 5A；The most as shown in Figure 4, might as well make M=8, the novel battery structural parameters obtained are as follows: Vmpp=800V, Impp=0.125A, and sub-number of battery cells is 1200；If now between sub-battery " 11 and 14 ", between " 15 and 18 " (wherein, 14 and 15 is the most iso-electric), each bypass diode D1 and D2 reversely it is incorporated to；Then by simple circuit analysis it is understood that, if hot spot effect is not the generation of monoblock cell panel but locally occurs, D1 can effectively alleviate the infringement that the hot spot effect of " 11 → N1 → N2 → 12 → 13 →...→ 14 " this lower half block battery causes, and D2 is then possible to prevent the infringement that the hot spot effect additionally going up half block battery causes；The connection circuit diagram of equivalence sees Fig. 5；For different NM planning and configuration, it is also possible to obtain the different impacts of performance.
According to general knowledge, cell piece occurs the probability of local hot spot effect should be much smaller than the probability of entire plate hot spot；If according to upper example, the crest voltage of the novel thin film solaode that we prepare is the highest, it is possible to when forming photovoltaic power generation array, it is not necessary to carrying out connecting i.e. is provided that system output voltage, i.e. all uses and is connected in parallel；If the most now still arranging " bypass " diode in circuit system, meaning is little；But diode " can be connected " on outlet line；Thus; diode is when cell piece normal power generation; do not hinder passing through of electric current, but cell panel because of hot spot effect or can not send out electricity because of other infringement when, cell piece can be protected to a certain extent not damaged by the high voltage drive adverse current at two ends.
The access of diode, it should parameter and purposes according to battery are drafted, and are thinking and concept provided herein；As: it is incorporated to during in needs hot spot protection as bypass diode, seals in when full electricity-generating circuit in parallel, can play a protective role.
Connection between sub-battery and lead-out wire and between diode, can there is multiple welding manner, premise is the destruction that the back electrode of sub-battery will not suffer in performance because of welding, and welds and the thickness of monolithic films battery will not be made overall or the change of large-size locally occurs；The mode relatively recommended is ultrasonic bonding, and its action is gentleer, good stability, the most additionally increases material, does not has high-temperature heating the most just need not worry for weld layer is destroyed by calcination.
When needs with cell piece be linked to be photovoltaic system generate electricity time, " M " can be determined by, utilize cell piece can accomplish high-tension feature, accomplish system voltage with one piece of cell piece, then allow all of cell piece be attached in parallel；Such benefit is, wherein during the unusual condition such as part cell piece generation hot spot effect, total peak output voltage will not change；Further, such parallel system, when hot spot effect, can more be stablized.
Diode can again mate and arrange, as long as being connected into correct, would not cause the situation that back current generates heat, system effectiveness significantly decays of whole electricity generation system because of the cell piece of these exceptions；Such as, as shown in Figure 4 at inside battery two bypass diodes in parallel, adverse current, the heat waste effect preferably preventing battery local hot spot effect from causing can be played；And if by diode string at the outfan of each piece of batteries in parallel connection, also can play a very good protection, i.e. the collocation of novel thin film solaode and diode can have uniqueness advantage.
The processing step that realizes summing up the present invention includes:
A. on base plate glass 1, deposit conductive membrane layer 2；
B.P1 laser scribe and cutting: laser is along the laterally and longitudinally cross-cut TCO conductive membrane layer 2 of base plate glass 1, TCO conductive membrane layer 2 after cleaved forms the separate conductive module being arranged in order by lateral trench P11 and longitudinal groove P12, and the separate conductive module 21 of adjacent two row terminations is end to end, form the front electrodes conduct bar that " snakelike " arranges；
C. depositing photovoltaic absorbed layer 3 on the TCO conductive membrane layer 2 after P1 laser scribe and cutting；
D.P2 laser scribe and cutting: the centerline parallel of the longitudinal groove P12 formed after the laser rays of cutting photovoltaic absorption layer and P1 cut, and the centrage of the odd-numbered line preformed groove P21 and even number line preformed groove P22 of formation simultaneous bias longitudinal groove P12 respectively after cutting；
E. on the photovoltaic absorption layer 3 after P2 laser scribe and cutting, dorsum electrode layer 4 is deposited；
F.P3 laser scribe and cutting: dorsum electrode layer 4 and photovoltaic absorption layer 3 are cut in the direction of preformed groove P21, P22 of being formed after the lateral trench P11 formed after P3 time laser edge respectively is parallel to P1 cutting, P2 cutting, form the sub-battery modules that " snakelike " connects；
In described step D: the centrage of odd-numbered line preformed groove P21 simultaneous bias longitudinal groove P12 to the right, the centrage of even number line preformed groove P22 simultaneous bias longitudinal groove P12 to the left.

Claims (7)

1. improve solaode module series voltage and the method effectively reducing hot spot effect, described method realizes on the basis of solaode module preparation technology, described method step is included on base plate glass (1) and deposits conductive membrane layer (2) scribing, depositing photovoltaic absorbed layer (3) scribing, deposition dorsum electrode layer (4) scribing form sub-series battery modules, it is characterized in that: the delineation mode of described conductive membrane layer (2) is: score line is cut along lateral orientation and longitudinal azimuth crossings of base plate glass (1), conductive membrane layer (2) after cleaved forms, by lateral trench (P11) and longitudinal groove (P12), the separate conductive module being arranged in order, and the separate conductive module (21) of adjacent two row terminations is end to end, form the front electrodes conduct bar that " snakelike " arranges；The delineation of described photovoltaic absorption layer (3) and dorsum electrode layer (4) carries out scribing according to the shape of front electrodes conduct bar, forms the sub-battery modules that " snakelike " connects respectively.
Raising solaode module series voltage the most according to claim 1 and the method effectively reducing hot spot effect, it is characterised in that: the connected mode that the separate conductive module (21) of described adjacent two row terminations is end to end includes: the body of two pieces of separate conductive modules is in one-piece connection or connects by conductive material.
Raising solaode module series voltage the most according to claim 1 and the method effectively reducing hot spot effect, it is characterized in that: in the separate conductive module (21) of adjacent two row terminations, set up high conductivity silver/copper/aluminum thin layer, the conductivity of described silver/copper/aluminum thin layer respectively: silver is 0.0159(Ω mm2/ m), copper be 0.0167(Ω mm2/ m), aluminum be 0.02635(Ω mm2/ m).
4. the solaode module of the how sub-battery series connection that according to claim 1 prepared by method, structure sheaf includes base plate glass (1), conductive membrane layer (2), photovoltaic absorption layer (3), dorsum electrode layer (4), it is characterized in that: the structure of described solaode module includes at least two row's sub-series batteries, the conductive membrane layer (2) of the sub-battery (5) of adjacent two row terminations joins end to end, and forms " snakelike " sub-series battery modules.
The solaode module of a kind of how sub-battery the most according to claim 4 series connection, it is characterised in that: the sub-cell shapes in described solaode module is rectangle or square or triangle or hexagon.
The solaode module of a kind of how sub-battery the most according to claim 4 series connection, it is characterized in that: between conductive membrane layer (2) and the photovoltaic absorption layer of the sub-battery (5) of described adjacent two row terminations, be equipped with high conductivity silver/copper/aluminum thin layer, the conductivity of described silver/copper/aluminum thin layer respectively: silver is 0.0159(Ω mm2/ m), copper be 0.0167(Ω mm2/ m), aluminum be 0.02635(Ω mm2/ m).
The solaode module of a kind of how sub-battery the most according to claim 4 series connection, it is characterised in that: set up bypass diode (D1, D2) being spaced between an adjacent row and the circuit of above sub-series battery.
CN201310449370.9A 2013-09-27 2013-09-27 A kind of solaode module of how sub-battery series connection and preparation method thereof Expired - Fee Related CN104282802B (en)

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KR102039215B1 (en) * 2016-03-28 2019-10-31 주식회사 엘지화학 Organic solar cell modules and method for manufacturing organic solar cell modules
CN106229353B (en) * 2016-08-19 2017-11-24 中山瑞科新能源有限公司 A kind of film battery assembly preparation method first in parallel connected again
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102082211A (en) * 2010-08-09 2011-06-01 河北东旭投资集团有限公司 Amorphous silicon solar cell module simplifying process
CN102117815A (en) * 2010-01-06 2011-07-06 京东方科技集团股份有限公司 Solar battery assembly and preparation method thereof
CN102714235A (en) * 2010-01-22 2012-10-03 夏普株式会社 Back contact solar cell, wiring sheet, solar cell having wiring sheet, solar cell module and production method for solar cell having wiring sheet

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120234375A1 (en) * 2009-11-17 2012-09-20 Mitsubishi Electric Corporation Thin film solar cell and method of manufacturing the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102117815A (en) * 2010-01-06 2011-07-06 京东方科技集团股份有限公司 Solar battery assembly and preparation method thereof
CN102714235A (en) * 2010-01-22 2012-10-03 夏普株式会社 Back contact solar cell, wiring sheet, solar cell having wiring sheet, solar cell module and production method for solar cell having wiring sheet
CN102082211A (en) * 2010-08-09 2011-06-01 河北东旭投资集团有限公司 Amorphous silicon solar cell module simplifying process

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